CN108318175A - A kind of gas pressure sensor device based on graphene conductive characteristic - Google Patents
A kind of gas pressure sensor device based on graphene conductive characteristic Download PDFInfo
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- CN108318175A CN108318175A CN201810110663.7A CN201810110663A CN108318175A CN 108318175 A CN108318175 A CN 108318175A CN 201810110663 A CN201810110663 A CN 201810110663A CN 108318175 A CN108318175 A CN 108318175A
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- graphene film
- single crystal
- crystal silicon
- silicon plate
- circular single
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
- G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
- G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention is difficult to the present situation measured for gas in closed vessel pressure, proposes a kind of gas in closed vessel device for pressure measurement.Pressure sensor closed container device is made of cylindrical container, low-pressure gas, circular single crystal silicon plate and graphene film.The bridge circuit signal extracting device is made of power supply, resistance, ammeter, voltmeter, switch and conducting wire.Into container, direction is bent under the action of low-pressure gas for circular single crystal silicon plate and graphene film, graphene film length changes, the resistance of graphene film changes with length, corresponding electric current and voltage change will be formed on bridge circuit signal extraction circuit, acquire the variable signal, the resistance variations that graphene film can be obtained by conversion obtain gas in container pressure.
Description
Technical field
Patent of the present invention is a kind of gas pressure detection unit, especially a kind of to be used for gas pressure measurement device, is belonged to
Art of pressure sensors.
Background technology
Pressure sensor is widely used in automotive system, industrial stokehold, medical diagnosis and monitoring and environmental monitoring
In.In pressure sensor, film thickness is the principal element for determining Sensitivity in Pressure Sensors.Monocrystalline silicon can deformation film be
One of most widely used material.But integrated piezoresistance sensor is complicated, of high cost in the presence of processing on monocrystalline silicon thin film asks
Topic.The resistance uniformity of piezoresistance sensor is difficult to accurately ensure, becomes and restrict what monocrystalline silicon thin film pressure sensor technique improved
Problem.Graphene film has the advantages that ultra-thin, intensity super large, the spy changed with length with excellent electric conductivity and resistance
Property.Existing graphene processing technology can manufacture the good film of large area, consistency, be pressure sensor and piezoresistance sensor
Good alternative materials.Bridge circuit be it is a kind of there is highly sensitive and accuracy measuring circuit, can be with using nonequilibrium bridge
The accurate resistance for measuring variation, and then the pressure of gas is measured indirectly.
The present invention can be widely applied to the gas pressure detection work in the fields such as meteorology, chemical industry.
Invention content
The present invention is difficult to the present situation measured for gas in closed vessel pressure, proposes a kind of gas in closed vessel pressure
Measuring device.
Scheme is used by patent of the present invention solves its technical problem：The gas pressure based on graphene conductive characteristic
Force measuring device, including pressure sensor closed container device, bridge circuit signal extracting device two parts.The pressure sensing
Device closed container device, it is characterised in that：The pressure sensor closed container device is by cylindrical container, low-pressure gas, circle
Shape monocrystalline silicon plate and graphene film composition.It is filled with low-pressure gas in the cylindrical container so that circular single crystal silicon plate is always
It curves inwardly；The circular single crystal silicon plate radius is 2mm, and thickness is 20 μm, is consolidated in cylindrical container upper opening position, with
Cylindrical container forms closed container together；The graphene film length is 1mm, and width is 500 μm, thickness 0.35nm,
It is adhered to circular single crystal silicon plate lower surface by van der waals force；The graphene film both ends connect conducting wire, are separately connected
The both ends a, b of bridge circuit.
The bridge circuit signal extracting device is made of power supply, resistance, ammeter, voltmeter, switch and conducting wire, special
Sign is：The power cathode is connect by conducting wire with switch right end, and switch left end is connect by conducting wire with bridge circuit left end,
Bridge circuit upper end is connect by conducting wire with ammeter left end, and ammeter right end is connect by conducting wire with voltmeter upper end, voltage
Table lower end is connect by conducting wire with bridge circuit lower end, and bridge circuit right end is connect by conducting wire with positive pole；The graphite
For alkene film as a resistance on bridge circuit, the both ends a, b on bridge circuit are separately connected a, b two of graphene film
End, initial resistivity value when graphene film does not deform is the resistance value of other three fixed value resistances on bridge circuit.
Into container, direction is bent under the action of low-pressure gas for circular single crystal silicon plate and graphene film, graphene film
Length changes, and the resistance of graphene film changes with length, will be formed on bridge circuit signal extraction circuit corresponding
Electric current and voltage change, acquire the variable signal, the resistance variations of graphene film can be obtained by conversion, obtain container
Interior gas pressure.
When circular single crystal silicon plate deforms upon, the numerical value of voltmeter is read, obtaining the pressure difference at plectane center isWherein, P is that container external and internal pressure is poor, and E is the elasticity modulus of circular single crystal silicon plate material, b
For the width of graphene film, l is the length of graphene film, and h is the thickness of circular single crystal silicon plate, UgIt is shown for voltmeter
Value, a are the radius of circular single crystal silicon plate, and γ is Poisson's ratio, UsFor supply voltage.
The present invention has the following advantages that compared with prior art：
1. graphene film is ultra-thin, intensity super large, the influence to measurement result is small, has excellent electric conductivity.
2. the bridge circuit based on graphene piezoresistance sensor, which is one kind, having the characteristics that highly sensitive and accuracy, utilization are non-
Balanced bridge can accurately measure the resistance of variation, measure the pressure of gas indirectly.
Description of the drawings
Fig. 1 pressure sensor closed container schematic diagrames；
Fig. 2 bridge circuit signal extraction schematic diagrames；
Fig. 3 film circular single crystal silicon plate schematic diagrames；
In figure, 1, circular single crystal silicon plate 2, graphene film 3, cylindrical container 4, low-pressure gas 5, ammeter 6,
Voltmeter 7, resistance 8, power supply 9, switch 10, resistance 11, resistance
Specific implementation mode
It is described in further detail below in conjunction with attached drawing：
The agent structure of the present embodiment includes pressure sensor closed container device, bridge circuit signal extracting device two
Point.The pressure sensor closed container device is thin by cylindrical container 3, low-pressure gas 4, circular single crystal silicon plate 1 and graphene
Film 2 forms.Low-pressure gas 4 is filled in the cylindrical container 3 so that circular single crystal silicon plate 1 always curves inwardly；The circle
1 radius of monocrystalline silicon plate is 2mm, and thickness is 20 μm, is consolidated in 3 top of cylindrical container, is formed together with cylindrical container 3 closed
Container；2 length of the graphene film is 1mm, and width is 500 μm, thickness 0.35nm, is consolidated under circular single crystal silicon plate 1
Surface, inside closed container；2 both ends of the graphene film connect conducting wire, are separately connected the both ends a, b of bridge circuit.
The bridge circuit signal extracting device by power supply 8, resistance 7, resistance 10, resistance 11, ammeter 5, voltmeter 6,
Switch 9 and conducting wire composition, it is characterised in that：8 cathode of the power supply is connect by conducting wire with 9 right end of switch, and 9 left end of switch passes through
Conducting wire is connect with bridge circuit left end, and bridge circuit upper end is connect by conducting wire with 5 left end of ammeter, and 5 right end of ammeter passes through
Conducting wire is connect with 6 upper end of voltmeter, and 6 lower end of voltmeter is connect by conducting wire with bridge circuit lower end, and bridge circuit right end passes through
Conducting wire is connect with 8 anode of power supply；The graphene film 2 is as a resistance on bridge circuit, a, b two on bridge circuit
End is separately connected the both ends a, b of graphene film 2, and initial resistivity value when graphene film 2 does not deform is bridge-type electricity
The resistance value of 11 3 road resistance 7, resistance 10 and resistance fixed value resistances.
Into container, direction is bent under the action of low-pressure gas 4 for circular single crystal silicon plate 1 and graphene film 2, graphene
2 length of film changes, and then the resistance of graphene film 2 changes with length, on bridge circuit signal extraction circuit just
Corresponding electric current and voltage change can be formed, the variable signal is acquired, the resistance that graphene film 2 can be obtained by conversion becomes
Change, obtains gas in container pressure.
When circular single crystal silicon plate 1 deforms upon, the numerical value of voltmeter 6 is read, obtaining the pressure difference at plectane center isWherein, P is that container external and internal pressure is poor, and E is the springform of circular single crystal silicon plate material
Amount, b are the width of graphene film, and l is the length of graphene film, and h is the thickness of circular single crystal silicon plate, UgIt is aobvious for voltmeter
Indicating value, a are the radius of circular single crystal silicon plate, and γ is Poisson's ratio, UsFor supply voltage.
Example 1：The length of graphene film is 1mm, and width is 500 μm, thickness 0.35nm, the half of circular single crystal silicon plate
Diameter is 2mm, and circular single crystal silicon plate material Poisson's ratio is 0.35, and the elasticity modulus of circular single crystal silicon plate is 190GPa, external power supply
For 2V.
When circular single crystal silicon plate bends, it is 920mV to drive graphene film bending, reading voltmeter numerical value, is calculated
It is 13280Pa to obtain pressure difference, it is known that external container is atmospheric pressure, then container internal pressure is 88045Pa.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the scope of the present invention.It is all
Within the spirit and principles in the present invention, made by any modification, equivalent replacement and improvement, should be included in of the present invention
Within protection domain.
Claims (1)
1. the pressure sensor closed container device by cylindrical container (3), low-pressure gas (4), circular single crystal silicon plate (1) and
Graphene film (2) forms；It is filled with low-pressure gas (4) in the cylindrical container (3) so that circular single crystal silicon plate (1) is always
It curves inwardly；Circular single crystal silicon plate (1) radius is 2mm, and thickness is 20 μm, is consolidated in above cylindrical container (3), with circle
Column type container (3) forms closed container together；Graphene film (2) length is 1mm, and width is 500 μm, and thickness is
0.35nm is consolidated in circular single crystal silicon plate (1) lower surface, inside closed container；Graphene film (2) both ends, which connect, leads
Line is separately connected the both ends a, b of bridge circuit；The work of circular single crystal silicon plate (1) and graphene film (2) in low-pressure gas (4)
It being bent with the lower direction into container, graphene film (2) length changes, and the resistance of graphene film (2) changes with length,
Corresponding electric current and voltage change will be formed on bridge circuit signal extraction circuit, acquires the variable signal, by conversion
The resistance variations that can obtain graphene film (2) obtain gas in container pressure；When circular single crystal silicon plate (1) deforms upon
When, the numerical value of voltmeter (6) is read, obtaining the pressure difference at plectane center isWherein, P
Poor for container external and internal pressure, E is the elasticity modulus of circular single crystal silicon plate material, and b is the width of graphene film, and l is graphene
The length of film, h are the thickness of circular single crystal silicon plate, UgFor voltmeter show value, a is the radius of circular single crystal silicon plate, and γ is
Poisson's ratio, UsFor supply voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810110663.7A CN108318175A (en) | 2018-02-05 | 2018-02-05 | A kind of gas pressure sensor device based on graphene conductive characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810110663.7A CN108318175A (en) | 2018-02-05 | 2018-02-05 | A kind of gas pressure sensor device based on graphene conductive characteristic |
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| CN108318175A true CN108318175A (en) | 2018-07-24 |
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| CN201810110663.7A Pending CN108318175A (en) | 2018-02-05 | 2018-02-05 | A kind of gas pressure sensor device based on graphene conductive characteristic |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108999477A (en) * | 2018-09-18 | 2018-12-14 | 吉林医药学院 | A kind of antitheft sylinder and graphene antitheft sylinder |
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| CN107359235A (en) * | 2017-08-14 | 2017-11-17 | 中北大学 | A kind of graphene pressure sensor |
| CN206659811U (en) * | 2016-12-02 | 2017-11-24 | 华东师范大学 | A kind of wearable plantar pressure measuring device based on fexible film pressure sensor |
| CN107488267A (en) * | 2017-07-18 | 2017-12-19 | 电子科技大学 | High resistive redox grapheme material being modified based on bead and preparation method thereof |
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2018
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN206659811U (en) * | 2016-12-02 | 2017-11-24 | 华东师范大学 | A kind of wearable plantar pressure measuring device based on fexible film pressure sensor |
| CN107488267A (en) * | 2017-07-18 | 2017-12-19 | 电子科技大学 | High resistive redox grapheme material being modified based on bead and preparation method thereof |
| CN107359235A (en) * | 2017-08-14 | 2017-11-17 | 中北大学 | A kind of graphene pressure sensor |
Non-Patent Citations (2)
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| 代岳 等: "悬浮石墨烯薄膜的压力敏感特性建模与仿真分析", 《测试技术学报》 * |
| 蒋圣伟 等: "一种悬浮石墨烯压力传感器的制造与建模", 《传感器与微系统》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108999477A (en) * | 2018-09-18 | 2018-12-14 | 吉林医药学院 | A kind of antitheft sylinder and graphene antitheft sylinder |
| CN108999477B (en) * | 2018-09-18 | 2020-11-06 | 吉林医药学院 | Anti-theft cylinder lock and graphene anti-theft cylinder lock |
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