CN108305935A - Flexible thermo-electric device and preparation method - Google Patents
Flexible thermo-electric device and preparation method Download PDFInfo
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- CN108305935A CN108305935A CN201810128294.4A CN201810128294A CN108305935A CN 108305935 A CN108305935 A CN 108305935A CN 201810128294 A CN201810128294 A CN 201810128294A CN 108305935 A CN108305935 A CN 108305935A
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- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 29
- 230000005619 thermoelectricity Effects 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 11
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 229910002899 Bi2Te3 Inorganic materials 0.000 claims description 4
- 229910018985 CoSb3 Inorganic materials 0.000 claims description 4
- 229910017623 MgSi2 Inorganic materials 0.000 claims description 4
- 229910002665 PbTe Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
- H10N19/101—Multiple thermocouples connected in a cascade arrangement
Abstract
The present invention provides flexible thermo-electric devices and preparation method thereof, it is that patterned electrodes are respectively set in first flexible substrate and second flexible substrate, then by it is multiple staggeredly and the N-type and P-type semiconductor thermoelectric unit of the combination that is distributed in distance connect with the first, second flexible base board top electrode respectively, make each N-type and electrically coupled in series, the hot parallel-connection structure of P-type semiconductor thermoelectric unit composition and be located between the first, second flexible base board.Further, it can also be cut according to N-type and P-type semiconductor thermoelectric unit electric coupling area in first flexible substrate or/and second flexible substrate and form multiple partitions, from making flexible thermo-electric device that there is multidirectional flexible characteristic.Flexibility thermo-electric device temperature change of the invention and the thermal stress that generates is small, a variety of different shapes can be deformed into immediately according to heat source, it is high with the conjugation of heat source and simple in structure, it is of low cost.Carrier of the flexible base board as thermoelectric element, also can effectively protect thermoelectric element, extend the service life of device.
Description
Technical field
The invention belongs to technical field of thermoelectric conversion more particularly to a kind of flexible thermo-electric device and preparation methods.
Background technology
In recent years, it is increasingly improved with the continuous requirement in short supply with to environmental protection of global resource, using energy source is wanted
Ask also higher and higher.Heat to electricity conversion is at home and abroad received significant attention and is ground as environmental-friendly new energy technology in recent years
Study carefully.According to the pyroelectric technology of Seebeck effect principles, various forms of heat sources can be utilized, electric energy is converted heat energy into, are had
Have cleanliness without any pollution, without mechanical oscillation, high reliability, industrial exhaust heat, the infrared heat source of solar energy, desert ground
Exterior heat amount, waste heat of automotive exhaust gas such as utilize to have boundless application prospect, the recycling to entire society's resource at the fields
Have far-reaching significance with economizing on resources.
The ceramic substrate that thermo-electric device traditional at present mainly uses inflexibility, brittleness larger is only applicable to for matrix
The utilization of flat heat source.However, a large amount of waste heat of automotive exhaust gas at present, the heat source of industrial exhaust heat be all it is cylindric, it is rectangular-shaped etc.
Complex-curved shape heat source, the inflexibility characteristic of ceramic substrate so that Conventional thermoelectric device cannot adhere completely on heat source, heat
Contact effect it is poor, be not suitable for presently, there are the various heat sources having a complex shape utilization.
And the flexible thermo-electric device reported both at home and abroad is largely organic thermo-electric device, the thermoelectric figure of merit of these organic materials
Relatively low and material preparation process is immature, therefore the performance of organic flexible thermo-electric device is poor, is still not suitable for application.And it uses inorganic
Semiconductor bulk thermoelectric material improves device preparation technology, makes it have the method that flexibility is more real at present.But it is this
Method, using the red copper net and silica gel that gap is larger, the greatly relatively low electrical conduction and thermal conduction characteristic of device is improved and is connect
Get an electric shock resistance and thermal contact resistance, while preparation process very complicated, and manufacturing cost is high, and the bond strength of electrode is relatively low, device
Mechanical stability is poor.
Therefore the field be badly in need of exploitation it is a kind of it is new can utilize heat source of different shapes, while it is easy to produce, have it is excellent
The flexible thermo-electric device of benign energy.
Invention content
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, a kind of flexible thermo-electric device is provided firstly, it can
It is deformed into a variety of different shapes immediately according to heat source, and the combination of heat source is preferable, is convenient for the profit of various various forms of heat sources
With, and it is simple in structure, it is of low cost.
Flexibility thermo-electric device provided by the invention, including：
Thermoelectric element, including it is multiple staggeredly and the combination that is distributed in distance N-type semiconductor thermoelectric unit and P-type semiconductor heat
Electric unit；
First flexible substrate a, wherein surface has and each N-type semiconductor thermoelectric unit and P-type semiconductor heat
The corresponding first electrode of electric unit, the first electrode and each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectricity
The end face of unit is correspondingly connected with；
Second flexible substrate a, wherein surface has and each N-type semiconductor thermoelectric unit and P-type semiconductor heat
The corresponding second electrode of electric unit, the second electrode and each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectricity
The other end of unit connects and each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit is made to be located in institute
It states between first flexible substrate and the second flexible substrate and makes each institute.
As the optional structure of flexible thermo-electric device of the invention, in the first flexible substrate or/and second flexibility
On substrate, also have can by the N-type semiconductor thermoelectric unit and P-type semiconductor thermoelectric unit electric coupling area, pass through
Cutting mode and formed at least one partition.
As the optional structure of flexible thermo-electric device of the invention, the first flexible substrate and the second flexible substrate are adopted
It is made of polyimide flex material.
As the optional structure of flexible thermo-electric device of the invention, the N-type semiconductor thermoelectric unit and the P-type semiconductor
Thermoelectric unit uses Bi2Te3、MgSi2、Mg3Sb2, GeSi, PbTe or CoSb3Material is made；Either use half-hesuler
Or Organic thermoelectric material is made.
As the optional structure of flexible thermo-electric device of the invention, each N-type semiconductor thermoelectric unit and the p-type are partly led
The surface that body heat electric unit is connect with the first electrode and the second electrode is equipped with separation layer.
As the optional structure of flexible thermo-electric device of the invention, the separation layer is Ni, Co, Fe, In, Pt, Ag, Au, Ti
Or the alloy-layer of the metal layer of any simple substance or above two and two or more metals composition in Zn.
As the optional structure of flexible thermo-electric device of the invention, the N-type and the P-type semiconductor thermoelectric unit size are
Long 0.1-5mm, wide 0.1-5mm, high 0.05-5mm.
It is provided by the invention can flexible thermo-electric device, be to be combined to constitute by smaller thermoelectric material unit, with existing heat
Electrical part is compared, and the thermal stress generated by temperature change is small, and the whole thermoelectric element processing of no complexity simplifies adding for device
Work preparation process, and substantially increase the stability of device work.The present invention uses first flexible substrate and second flexible substrate
Structure, can immediately be bent or deformation according to the needs of heat source, and the combination of heat source is preferable, convenient for various different forms, various multiple
The utilization of the heat source of miscellaneous shape, thus there is very extensive use scope.Meanwhile flexible base board is alternatively arranged as thermoelectric element
Carrier, be remarkably improved the heat exchanger effectiveness of thermo-electric device and heat source, also can effectively protect thermoelectric element, it is therefore prevented that it is worked
Pollution in journey and mechanical failure extend the service life of device, have and stability is used for a long time.Further, first
The partition of multiple cuttings is formed on flexible base board or/and second flexible substrate, entire flexible thermo-electric device can be made to have more
The deflection of deformed region and bigger, to which with multidirectional bending deformed characteristic, more, more complicated shape can be suitble to
Heat source.
The present invention also provides the preparation methods of above-mentioned flexible thermo-electric device, include the following steps：
N-type semiconductor thermoelectric material chips and P-type semiconductor thermoelectric material chips are cut to size to the heat to form certain specification
Electric unit；
A surface in the first flexible substrate and the second flexible substrate prepare patterned first electrode and
Second electrode and make the relatively described second electrode Heterogeneous Permutation of the first electrode；
By the grid with multiple apertures corresponding with the first electrode be placed in the first flexible substrate with
On the surface of two electrodes, then multiple N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric unit are alternately arranged
Be positioned in the grid, and make the end face of each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit with
The second electrode is correspondingly connected with and is fixed in the first flexible substrate, then grid is removed；
By the second electrode and multiple N-types in the first flexible substrate half in the second flexible substrate
The other end of conductor thermoelectric unit and P-type semiconductor thermoelectric unit is correspondingly connected with, make each N-type semiconductor thermoelectric unit and
The P-type semiconductor thermoelectric unit forms electrically coupled in series, hot parallel-connection structure and is located in the first flexible substrate and described second
Between flexible base board.
The optional step of preparation method as thermo-electric device of the invention flexible, in each N-type semiconductor thermoelectric unit
Electrically coupled in series, hot parallel-connection structure is formed with the P-type semiconductor thermoelectric unit and is located in the first flexible substrate and described
After between two flexible base boards, in the first flexible substrate or/and the second flexible substrate, according to the N-type semiconductor
Thermoelectric unit and the electrically coupled in series structural region of P-type semiconductor thermoelectric unit form at least one partition using cutting mode, make institute
State the arbitrarily bending or deformation of flexible thermo-electric device.
The optional step of preparation method as thermo-electric device of the invention flexible, each N-type semiconductor thermoelectric unit and
The P-type semiconductor thermoelectric unit is connect by welding manner with the first flexible substrate and the second flexible substrate solid
It is fixed.
The optional step of preparation method as thermo-electric device of the invention flexible, in each N-type semiconductor thermoelectric unit
It is fixedly connected on P-type semiconductor thermoelectric unit in the step of the first flexible substrate and second flexible substrate, is by grid
It is covered in the first flexible substrate, and solder is added dropwise in first electrode, then by the N-type in the grid aperture
Semiconductor heat electric unit and the P-type semiconductor thermoelectric unit are put into the grid, are heated to 170 DEG C -180 DEG C and are welded
It connects, removes the grid after cooling；Then grid is covered in the second flexible substrate again, in the second electrode
Solder is added dropwise, make after first electrode second electrode dislocation relatively with each N-type semiconductor thermoelectric unit and the P
Type semiconductor thermoelectric element solder.
The flexible thermo-electric device made of preparation method of the present invention, it is higher with existing device preparation technology compatible degree,
Complicated process equipment and mold are not needed, manufacturing process is simple, and the time is short, of low cost, it is easy to accomplish, hot-working stress
It is small, it can preferably ensure each component mechanical performance, and be easy to improve existing processing technology and reform, there is very high push away
Wide value.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the constructive embodiment sectional schematic diagram of flexible thermo-electric device provided by the invention；
Fig. 2 is that the arbitrary bending obtained after the constructive embodiment of flexible thermo-electric device provided by the invention is cut and deformation are disconnected
Face schematic diagram；
Fig. 3 is the first flexible substrate structure top view provided by the invention with cutting line；
Fig. 4 is the second flexible substrate structure top view provided by the invention with cutting line.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
It should be noted that when element is referred to as " being fixed on " or " being set to " another element, it can be directly another
On one element or it may be simultaneously present centering elements.When an element is known as " being connected to " another element, it can
To be directly to another element or may be simultaneously present centering elements.
It should also be noted that, the embodiment of the present invention in " length direction ", " width direction ", "upper", "lower", "inner",
The orientation term such as "outside", " table (end) face " or " another table (end) face " is only relative concept or with the normal of product each other
Use state is reference, or is referred to based on the position that attached drawing is shown, the description present invention and letter are merely for convenience of
Change description, do not indicate or imply the indicated device or element must have a particular orientation, with specific azimuth configuration and
Operation, therefore should not be regarded as restrictive.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
Referring to Fig. 1, the present invention provides a kind of flexible thermo-electric device example structures, including first flexible substrate 1, second
Flexible base board 3 and thermoelectric unit 5, the thermoelectric element 5 cut the smaller unified rule to be formed using thermoelectric material including multiple
The N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 of lattice size, the N-type semiconductor thermoelectric unit 51 and p-type
Semiconductor heat electric unit 52 is arranged in pairs, and it is interlaced be distributed in distance, longitudinally staggered and laterally staggered interval can arrange simultaneously
Row, after arrangement combination constitute thermoelectric element 5, and along its length or width direction forms and is spaced opposite first end face 54 and second
End face 53；1 surface 11 therein of the first flexible substrate has multiple forming regions, can form patterned area layout
Multiple first electrodes 2 with certain intervals, each first electrode 2 and N-type semiconductor thermoelectric unit 51 and P-type semiconductor heat
The arrangement mode of electric unit 52 is adapted, and is slightly larger than 52 ruler of N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit
It is very little.After the first electrode 2 is fixed on first flexible substrate 1, with outside surface 21, the surface 21 and N-type semiconductor
The contraposition of first end face 54 on thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 is connected and fixed, that is, the N-type semiconductor after arranging
Thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 are bonded respectively to be fixed on the surface 21 of each first electrode 2.Meanwhile it is described
Also there are multiple forming regions, can form the multiple of patterned area layout has centainly on the surface 31 of second flexible substrate 3
The second electrode 4 at interval, to connect the second end face 53 of thermoelectric unit 5.Similarly, each second electrode 4 and N-type semiconductor heat
Electric unit 51 is consistent with the arrangement mode of P-type semiconductor thermoelectric unit 52, and is slightly larger than N-type semiconductor thermoelectric unit 51 and p-type
52 size of semiconductor heat electric unit, but opposite first pole 2 shifts to install, i.e. first electrode 2 above-mentioned second electrode 4 relatively are in one
52 Heterogeneous Permutation of a N-type semiconductor thermoelectric unit 51 or P-type semiconductor thermoelectric unit.When connection, make in the second electrode 4 with
The opposite surface 41 of thermoelectric unit 5 is fixedly connected with the contraposition of second end face 53 on thermoelectric unit 5.Since first electrode 2 is opposite
In 4 Heterogeneous Permutation of second electrode, therefore can make to be formed between each N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52
Electrically coupled in series, hot parallel connection structure.And since first flexible substrate 1 and second flexible substrate 3 have deformable flexibility, and press from both sides
If the N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectricity that are fixed between first flexible substrate 1 and second flexible substrate 3
52 size of unit is small, and is arranged in spacing, therefore can be deformed with the deformation of first flexible substrate 1 and second flexible substrate 3, from
And make thermo-electric device formation of the present invention can be with the flexible structure of heat source outer surface shape adaptation.
It can see from above-mentioned flexible thermal electrical device structures, thermoelectric unit 5 of the present invention is by multiple smaller N-type semiconductors
Thermoelectric unit 51 and the combination of P-type semiconductor thermoelectric unit 52 connect and compose, and only need to thermoelectric material be cut into uniform specification
Structure size, complicated thermoelectric unit former processing need not be used or be processed into thermoelectric unit and heat
The matched shape in source makes the processing preparation process of device greatly simplify, of low cost, and since thermoelectric unit is simple in structure, by
Temperature change and the thermal stress that generates is small, to substantially increase the stability of device work.Further, due to thermoelectric unit
Specification it is small, and be set in distance, can design permutation and combination as needed, it is convenient with first flexible substrate 1 and the
The connection of two flexible base boards 3, is conducive to the deformation of first flexible substrate 1 and second flexible substrate 3.Meanwhile first flexible substrate 1
It is made of flexible material with second flexible substrate 3, it is very strong with heat source outer surface suitability, it is alternatively arranged as the load of thermoelectric unit
Body, effectively fixed and protection thermoelectric unit, prevents the pollution in the course of work and mechanical failure, and extend device uses the longevity
Life has the stability being used for a long time.
The conjugation of the present invention and heat source is higher, is conducive to various various forms of heat sources and utilizes, can significantly improve thermoelectricity
The heat exchanger effectiveness of device and heat source.Since thermoelectric unit arrangement is simple, with existing device preparation technology compatible degree compared with
Height is easy to existing processing technology and improves innovation.
With further reference to Fig. 2-Fig. 4, the present invention can also be according to heat source shape or/and actual needs, in first flexible substrate 1
Or in second flexible substrate 3, at least one partition 6 of setting, or it is different in first flexible substrate 1 and second flexible substrate 3 simultaneously
Position, be arranged it is multiple partition 6, which can be formed by cutting mode, specifically can be by N-type semiconductor thermoelectric unit 51 and P
52 electric coupling area of type semiconductor heat electric unit carries out, to ensure each N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectricity list
Electrically coupled in series, hot parallel connection structure between member 52 does not detach.This structure setting, due to first flexible substrate 1 or/and second
Partition with multiple cuttings on flexible base board 3, and flexible thermo-electric device entirety and do not turn off, in this way, can further make entire
Flexible thermo-electric device has the deflection of more deformed regions and bigger, to multidirectional bending deformed spy
Property, the heat source of more, more complicated shape can be suitble to, and this structure is the cutting immediately as needed on the basis of above structure
Processing and obtain, it is simple, quick and facilitate, with heat source compactness higher.
In structure of the embodiment of the present invention, the first flexible substrate 1 and second flexible substrate 3 are all made of polyimide flex
Material is made, and has flexible, and thermoplasticity is good, and high temperature is indeformable up to 400 DEG C or more, and has higher insulation performance, non-
It is adapted to make the flexible substrate of thermo-electric device.It is to be appreciated that the first flexible substrate 1 and second flexible substrate 3
The making of other flexible materials can be used, as long as thermoelectric unit 5 can be carried well and can have good thermoplasticity and heat
Conductive performance is all protection scope of the present invention.
In structure of the embodiment of the present invention, the N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 are selected
One kind in following thermoelectric materials：Bi2Te3、MgSi2、Mg3Sb2, GeSi, PbTe or CoSb3Material is made；Either use
Half-hesuler or Organic thermoelectric material are made.Flat member is made in above-mentioned material, is then cut into long 0.1-5mm,
The sheet thermoelectric unit of wide 0.1-5mm, high 0.05-5mm.The N-type semiconductor thermoelectric unit 51 and P-type semiconductor cut
Thermoelectric unit 52 is most simple laminated structure, and specification is small, easy to process, is easy with first flexible substrate when being distributed in distance
1 and second flexible substrate 3 deform, smaller radius of curvature can be reached, be applicable to various different heat sources appearance and sizes.
In structure of the embodiment of the present invention, the N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 with
The first end face 54 of one electrode 2 connection and the second end face 53 being connect with second electrode 4 are equipped with separation layer (not shown).The isolation
Layer can be the metal layer of any simple substance or above two and two or more gold in Ni, Co, Fe, In, Pt, Ag, Au, Ti or Zn
Belong to the alloy-layer of composition, preferably nickel layer, can be processed by spraying, plating or magnetron sputtering mode.The thermal conductivity of nickel metal and
Conductivity is all very high, and property is stablized, and is conducive to hot transmission, and thermoelectric material coefficient of thermal expansion matches, and applies also for that weldering is added dropwise
Material goes back can effectively protect thermoelectric unit 5, solder can be prevented in high temperature convenient for being fixedly connected with first electrode 2 and second electrode 4
Under diffuse into thermoelectric unit 5.It is to be appreciated that the separation layer be not limited to it is above-mentioned list, can also use other
Mode is formed, if can be conducive to N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 and first electrode 2 and
The connection of second electrode 4, can with thermoelectric material matched coefficients of thermal expansion and be conducive to electrically and thermally.
The present invention also provides flexible thermo-electric device preparation methods, include the following steps：
S1 chooses n/p types Bi2Te3、MgSi2、Mg3Sb2、PbTe、CoSb3, GeSi base thermoelectricity materials piece, half-hesuler
Material piece or Organic thermoelectric material piece are high then according to target object appearance and size according to long 0.1-5mm, wide 0.1-5mm
The size of 0.05-5mm cuts the N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 to form sheet.
The step can carry out after plating, and the nickel layer of 0.04-0.6mm thickness can be plated in thermoelectric material on piece, is then cut again
At thermoelectric unit.
S2 is according to N-type semiconductor thermoelectric unit 51 and 52 size of P-type semiconductor thermoelectric unit respectively in first flexible substrate 1
With graphics processing first electrode 2 in second flexible substrate 3 and second electrode 4.
In the step, first electrode 2 and 4 size of second electrode should be slightly bigger than N-type semiconductor thermoelectric unit 51 and p-type is partly led
52 size of body heat electric unit, to ensure that every a pair of of N-type half can be completely covered in the size of each first electrode 2 and second electrode 4
Conductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52.And each first electrode 2 and second electrode 4 are according to the row of thermoelectric element 5
It arranges and corresponds to, making first electrode 2, there are one N-type semiconductor thermoelectric unit 51 or P-type semiconductor thermoelectricity lists with respect to the tool of second electrode 4
The Heterogeneous Permutation setting of member 52.
S3 is arranged according to (the can also be second flexible substrate 3) dimensioned one of first flexible substrate 1 and 2 size of first electrode
Grid, is then covered in the surface 21 of the first electrode 2 of first flexible substrate 1 by the porous steel mesh of stainless steel of row size fit
On, and binder (it is 138 DEG C of Sn42/Bi58 solders that the present embodiment, which selects fusing point) is added dropwise in first electrode 2 in each aperture
On, then multiple N-type semiconductor thermoelectric units 51 and P-type semiconductor thermoelectric unit 52 are alternately arranged and are positioned over above-mentioned grid
It is interior, and make the first end face 54 of each N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 and the first electrode 2
Fitting, using infrared heater, is heated to 170 DEG C -180 DEG C and is welded, and makes each N-type semiconductor thermoelectric unit 51 and p-type half
Conductor thermoelectric unit 52 and the surface 21 of the first electrode 2 are correspondingly connected with.When each N-type semiconductor thermoelectric unit 51 and p-type half
After conductor thermoelectric unit 52 is securely fastened in first flexible substrate 1, grid is removed.
The step mainly makes first flexible substrate 1 and N-type semiconductor thermoelectric unit 51 and p-type by solder reflow
The first end face 54 of semiconductor heat electric unit 52 connects.It is to be appreciated that first flexible substrate 1 and N-type semiconductor thermoelectric unit
51 and the connection type of P-type semiconductor thermoelectric unit 52 be not limited only to weld a kind of mode, as long as can ensure the first flexibility
Substrate 1 reliably connect with N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 and can ensure that electricity, heat transmit
Performance.
Grid is covered in second flexible substrate 3 by S4 again, keeps each aperture corresponding with second electrode 4, and make second electrode 4
First electrode 4 misplaces relatively in opposite first flexible substrate 1, and it is 138 DEG C that fusing point is then added dropwise in the second electrode 4
Sn42/Bi58 solders, then second electrode 4 in second flexible substrate 3 and N-type semiconductor thermoelectric unit 51 and P-type semiconductor is hot
The second end face 53 of electric unit 52 is bonded, and then utilizes infrared heater, solder is heated to 170 DEG C -180 DEG C, is made second soft
Property substrate 3 is welded to connect with each N-type semiconductor thermoelectric unit 51 and 52 second end face 53 of P-type semiconductor thermoelectric unit.After connection,
It is soft it to be folded in second flexible substrate 3 and first after 52 assembled arrangement of N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit
Property substrate 1 between, and per a line N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 passes through second electrode 4 and the
One electrode 2 forms electrically coupled in series structure, and each row form hot parallel-connection structure (referring to Fig. 1).
Similarly, in this step, second flexible substrate 3 and N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit
52 connection type is not limited only to weld a kind of mode, as long as can ensure second flexible substrate 3 and N-type semiconductor thermoelectricity list
Member 51 and P-type semiconductor thermoelectric unit 52 reliably connect and can ensure electricity, heat transfer performance.
It, can also be according to the size needs of heat source, in the first flexibility after above-mentioned steps are completed with further reference to Fig. 2-Fig. 4
On substrate 1 or/and second flexible substrate 3, area is electrically connected by N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52
Domain is cut, i.e., is cut according to the electrically coupled in series structural region of N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52
(first electrode 2 and second electrode 4 cannot be cut off, and can not be integrally cut off).It as shown in Figure 3 or Figure 4, can be by diagrammatically shown
Cutting line A or B cut, make to be formed multiple partitions 6, the first flexible base in first flexible substrate 1 or second flexible substrate 3
Plate 1 or second flexible substrate 3 not fully link together on the whole.In this way, by 6 disconnection of partition partly because not involving
And can open and have a certain degree as needed, to make entire flexible thermo-electric device have multidirectional flexible characteristic (see figure
2)。
It should be noted that above-mentioned diagram embodiment is that the flexible thermo-electric device preparation process of the present invention in actual use can
Multistage flexibility thermo-electric device combination settings are selected according to heat source configurations, it is very convenient.And since thermoelectric unit 5 of the present invention uses ruler
The smaller sheet thermoelectric unit of very little specification is constituted, and variously-shaped, therefore the shape of the flexible thermo-electric device of the present invention can be formed after combination
The multistage arc is not limited to the above embodiment, can also be square, polygon, cone or other abnormity etc., it can
To produce as needed and cut the size for forming certain specification in process in advance, to realize industrialized mass production
It needs, is then needed to be combined as a variety of different shapes immediately according to scene, thus there is very extensive use scope, it can
The needs for meeting various different heat sources are of great significance to utilization, the reduction environmental pollution of the resource of promotion.
The above is merely preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Any modification, equivalent replacement or improvement etc., should all be included in the protection scope of the present invention made by within principle.
Claims (11)
1. flexible thermo-electric device, which is characterized in that including：
Thermoelectric element, including it is multiple staggeredly and the combination that is distributed in distance N-type semiconductor thermoelectric unit and P-type semiconductor thermoelectricity list
Member；
First flexible substrate a, wherein surface has and each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectricity list
The corresponding first electrode of member, the first electrode and each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit
End face be correspondingly connected with；
Second flexible substrate a, wherein surface has and each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectricity list
The corresponding second electrode of member, the second electrode and each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit
Other end connection and so that each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit is located in described the
Make each N-type semiconductor thermoelectric unit and P-type semiconductor heat between one flexible base board and the second flexible substrate
Electric unit constitutes electrically coupled in series, hot parallel-connection structure.
2. flexibility thermo-electric device as described in claim 1, which is characterized in that in the first flexible substrate or/and described the
On two flexible base boards, area can be electrically connected by the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit by also having
Domain, at least one partition formed by cutting mode.
3. flexibility thermo-electric device as described in claim 1, which is characterized in that the first flexible substrate and second flexibility
Substrate is made of polyimide flex material.
4. flexibility thermo-electric device as described in claim 1, which is characterized in that the N-type semiconductor thermoelectric unit and the p-type
Semiconductor heat electric unit uses Bi2Te3、MgSi2、Mg3Sb2, GeSi, PbTe or CoSb3Material is made；Either use half-
Hesuler or Organic thermoelectric material are made.
5. flexibility thermo-electric device as described in claim 1, which is characterized in that each N-type semiconductor thermoelectric unit and the P
The surface that type semiconductor heat electric unit is connect with the first electrode and the second electrode is equipped with separation layer.
6. flexibility thermo-electric device as claimed in claim 5, which is characterized in that the separation layer is Ni, Co, Fe, In, Pt, Ag,
The alloy-layer of the metal layer of any simple substance or above two and two or more metals composition in Au, Ti or Zn.
7. flexibility thermo-electric device as claimed in any one of claims 1 to 6, which is characterized in that the N-type and the P-type semiconductor
Thermoelectric unit size is long 0.1-5mm, wide 0.1-5mm, high 0.05-5mm.
8. flexible thermo-electric device preparation method, which is characterized in that include the following steps：
N-type semiconductor thermoelectric material chips and P-type semiconductor thermoelectric material chips are cut to size to the thermoelectricity list to form certain specification
Member；
A surface in the first flexible substrate and the second flexible substrate prepares patterned first electrode and second
Electrode and make the relatively described second electrode Heterogeneous Permutation of the first electrode；
Grid with multiple apertures corresponding with the first electrode is placed in the electric with second of the first flexible substrate
On the surface of pole, multiple N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric unit are then alternately arranged placement
In in the grid, and make the end face of each N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit with it is described
Second electrode is correspondingly connected with and is fixed in the first flexible substrate, then grid is removed；
By the second electrode in the second flexible substrate and multiple N-type semiconductors in the first flexible substrate
The other end of thermoelectric unit and P-type semiconductor thermoelectric unit is correspondingly connected with, and makes each N-type semiconductor thermoelectric unit and described
P-type semiconductor thermoelectric unit forms electrically coupled in series, hot parallel-connection structure and is located in the first flexible substrate and second flexibility
Between substrate.
9. flexibility thermo-electric device preparation method as claimed in claim 8, which is characterized in that in each N-type semiconductor thermoelectricity
Unit and the P-type semiconductor thermoelectric unit form electrically coupled in series, hot parallel-connection structure and are located in the first flexible substrate and institute
After stating between second flexible substrate, in the first flexible substrate or/and the second flexible substrate, according to the N-type half
Conductor thermoelectric unit and the electrically coupled in series structural region of P-type semiconductor thermoelectric unit form at least one partition using cutting mode,
Make the flexible thermo-electric device arbitrarily bending or deformation.
10. flexibility thermo-electric device preparation method as claimed in claim 8 or 9, which is characterized in that each N-type semiconductor heat
Electric unit and the P-type semiconductor thermoelectric unit pass through welding manner and the first flexible substrate and the second flexible substrate
It is connected and fixed.
11. flexibility thermo-electric device preparation method as claimed in claim 10, which is characterized in that in each N-type semiconductor heat
Electric unit and P-type semiconductor thermoelectric unit are fixedly connected in the step of the first flexible substrate and second flexible substrate, are
Grid is covered in the first flexible substrate, and solder is added dropwise in first electrode in the grid aperture, then will
The N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit are put into the grid, are heated to 170 DEG C -180 DEG C
It is welded, is removed the grid after cooling；Then grid is covered in the second flexible substrate again, described second
Solder is added dropwise on electrode, make after first electrode second electrode dislocation relatively with each N-type semiconductor thermoelectric unit
It is welded with the P-type semiconductor thermoelectric unit.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265538A (en) * | 2019-05-30 | 2019-09-20 | 清华大学 | Flexible thermoelectric generator and its preparation method and application system |
| CN111092145A (en) * | 2019-12-23 | 2020-05-01 | 南方科技大学 | Thermoelectric power generation part and preparation method thereof |
| CN111106231A (en) * | 2018-10-26 | 2020-05-05 | 纳米及先进材料研发院有限公司 | Flexible thermoelectric generator and method of manufacturing the same |
| CN112531099A (en) * | 2020-11-13 | 2021-03-19 | 深圳热电新能源科技有限公司 | High-performance inorganic block flexible thermoelectric device and preparation method thereof |
| CN113257984A (en) * | 2021-04-15 | 2021-08-13 | 深圳大学 | Temperature-adjustable flexible thermoelectric device and preparation method and application thereof |
| CN113279928A (en) * | 2021-06-30 | 2021-08-20 | 浙江大学 | Power generation equipment utilizing ocean temperature difference energy |
| WO2023124291A1 (en) * | 2021-12-27 | 2023-07-06 | 南方科技大学 | Gas adsorption separation system |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030084935A1 (en) * | 2001-11-05 | 2003-05-08 | Bell Lon E. | Flexible thermoelectric circuit |
| CN1541422A (en) * | 2001-07-12 | 2004-10-27 | �������弼��(����)���Ź�˾ | Thermoelectric module with thin film substrates |
| CN101847686A (en) * | 2009-03-26 | 2010-09-29 | 中国科学院上海硅酸盐研究所 | Thermoelectric device, electrode material and manufacturing method thereof |
| CN101894905A (en) * | 2010-06-07 | 2010-11-24 | 江西纳米克热电电子股份有限公司 | Flexible thermoelectric semiconductor power generator and preparation method thereof |
| CN104766922A (en) * | 2015-04-15 | 2015-07-08 | 中国科学院福建物质结构研究所 | Manufacturing method of flexible thermo-electric device and manufactured flexible thermo-electric device |
| CN107046092A (en) * | 2017-03-04 | 2017-08-15 | 浙江大学 | Wearable thermoelectric generator with engraved structure substrate and preparation method thereof |
| CN208225913U (en) * | 2018-02-08 | 2018-12-11 | 南方科技大学 | Flexible thermo-electric device |
-
2018
- 2018-02-08 CN CN201810128294.4A patent/CN108305935A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1541422A (en) * | 2001-07-12 | 2004-10-27 | �������弼��(����)���Ź�˾ | Thermoelectric module with thin film substrates |
| US20030084935A1 (en) * | 2001-11-05 | 2003-05-08 | Bell Lon E. | Flexible thermoelectric circuit |
| CN101847686A (en) * | 2009-03-26 | 2010-09-29 | 中国科学院上海硅酸盐研究所 | Thermoelectric device, electrode material and manufacturing method thereof |
| CN101894905A (en) * | 2010-06-07 | 2010-11-24 | 江西纳米克热电电子股份有限公司 | Flexible thermoelectric semiconductor power generator and preparation method thereof |
| CN104766922A (en) * | 2015-04-15 | 2015-07-08 | 中国科学院福建物质结构研究所 | Manufacturing method of flexible thermo-electric device and manufactured flexible thermo-electric device |
| CN107046092A (en) * | 2017-03-04 | 2017-08-15 | 浙江大学 | Wearable thermoelectric generator with engraved structure substrate and preparation method thereof |
| CN208225913U (en) * | 2018-02-08 | 2018-12-11 | 南方科技大学 | Flexible thermo-electric device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106231A (en) * | 2018-10-26 | 2020-05-05 | 纳米及先进材料研发院有限公司 | Flexible thermoelectric generator and method of manufacturing the same |
| CN111106231B (en) * | 2018-10-26 | 2023-07-04 | 纳米及先进材料研发院有限公司 | Flexible thermoelectric generator and manufacturing method thereof |
| CN110265538A (en) * | 2019-05-30 | 2019-09-20 | 清华大学 | Flexible thermoelectric generator and its preparation method and application system |
| CN111092145A (en) * | 2019-12-23 | 2020-05-01 | 南方科技大学 | Thermoelectric power generation part and preparation method thereof |
| CN112531099A (en) * | 2020-11-13 | 2021-03-19 | 深圳热电新能源科技有限公司 | High-performance inorganic block flexible thermoelectric device and preparation method thereof |
| CN113257984A (en) * | 2021-04-15 | 2021-08-13 | 深圳大学 | Temperature-adjustable flexible thermoelectric device and preparation method and application thereof |
| CN113257984B (en) * | 2021-04-15 | 2022-11-11 | 深圳大学 | Temperature-adjustable flexible thermoelectric device and preparation method and application thereof |
| CN113279928A (en) * | 2021-06-30 | 2021-08-20 | 浙江大学 | Power generation equipment utilizing ocean temperature difference energy |
| CN113279928B (en) * | 2021-06-30 | 2022-09-16 | 浙江大学 | Power generation equipment utilizing ocean thermal energy |
| WO2023124291A1 (en) * | 2021-12-27 | 2023-07-06 | 南方科技大学 | Gas adsorption separation system |
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