CN108303210B - InAs vacuum gauge and vacuum degree testing method - Google Patents
InAs vacuum gauge and vacuum degree testing method Download PDFInfo
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- CN108303210B CN108303210B CN201711474894.8A CN201711474894A CN108303210B CN 108303210 B CN108303210 B CN 108303210B CN 201711474894 A CN201711474894 A CN 201711474894A CN 108303210 B CN108303210 B CN 108303210B
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- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
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Abstract
The invention relates to an InAs vacuum gauge and a vacuum degree testing method, wherein the vacuum gauge comprises a cavity, a Schottky junction arranged in the cavity, vacuum electrodes connected with two ends of the Schottky junction, an external source gauge connected with the Schottky junction through the vacuum electrodes and an air source communicated with the interior of the cavity, wherein the cavity is provided with a connecting port communicated with an environment to be tested through a pipeline; during testing, the air pressure in the cavity is kept stable, the cavity is connected with the environment to be tested, the I-V curve of the Schottky junction is tested by using the external source meter and is compared with the I-V curve under the known vacuum degree, and the pressure of the environment to be tested is obtained. Compared with the prior art, the method has the greatest advantages of simple preparation method, easy operation, high test precision, durability and easy popularization and application.
Description
Technical Field
The invention relates to the technical field of vacuum gauges, in particular to an InAs vacuum gauge and a vacuum degree testing method.
Background
The vacuum system is an important component of a semiconductor material preparation and test system. Since air contains components such as oxygen and water, it is necessary to keep the growth system in a vacuum state when growing semiconductor materials such as Si and GaAs or thin film materials in order to prevent oxidation of the materials or introduction of impurities. For example, when pulling up a Si single crystal by the vertical bridgman method, it is necessary to put polycrystalline Si in a quartz ampoule in vacuum; when a GaAs film is prepared by a liquid phase epitaxy method, the system needs to be pumped to an ultrahigh vacuum state before mother liquor of Ga and GaAs is melted. Therefore, the growth system must be equipped with a vacuum gauge to measure pressure. At present, the types of vacuum gauges for commercial use are many, such as mercury column vacuum gauges, spring tube vacuum gauges, thermocouple vacuum gauges, cathode ionization vacuum gauges and the like, however, due to the limitation of design principles, the problems of narrow measurement range, poor stability, low durability and the like generally exist.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the InAs vacuum gauge with high sensitivity and high reliability and the vacuum degree testing method.
The purpose of the invention can be realized by the following technical scheme: the InAs vacuum gauge comprises a cavity, a Schottky junction arranged in the cavity, vacuum electrodes connected with two ends of the Schottky junction, an external source gauge connected with the Schottky junction through the vacuum electrodes and an air source communicated with the interior of the cavity, wherein the cavity is provided with a connecting port communicated with an environment to be measured through a pipeline.
The Schottky junction comprises a Zn-doped p-type InAs single crystal wafer and Au nano films arranged at two ends of the single crystal wafer, wherein the doping concentration of Zn is 5 multiplied by 1016cm-3And two ends of the vacuum electrode are connected to the two Au nano films to form a Schottky junction.
The Au nano film is connected with two ends of the single chip in a sputtering deposition mode.
The gas source is an oxygen cylinder or an air cylinder. Oxygen or oxygen atoms in air may cause the schottky junction barrier to change.
And a vacuum valve and a one-way valve are arranged on a connecting pipeline of the air source and the cavity.
A vacuum degree test method by adopting the InAs vacuum gauge comprises the following steps:
(1) opening a vacuum valve connected with a gas source and the cavity, and closing the vacuum valve after the cavity is filled with gas, wherein the gas pressure in the cavity is constant;
(2) opening a vacuum valve connecting the environment to be tested and the cavity, and testing the current and the voltage of the Schottky junction by using an external source meter to obtain an I-V curve;
(3) and (3) changing a contact potential barrier between the Au electrode and the InAs due to the adsorption-desorption process of oxygen atoms or molecules on the surface of the InAs semiconductor, so that an I-V curve is changed, and comparing the I-V curve measured in the step (2) with the I-V curve under the known vacuum degree to obtain the vacuum degree of the environment to be measured.
Compared with the prior art, the invention has the beneficial effects that: the vacuum gauge can be manufactured on site, and the manufacturing method is simple, easy to operate, high in testing precision, durable and easy to popularize and apply.
Drawings
FIG. 1 is a schematic view of the construction of a vacuum gauge of the present invention;
FIG. 2 is an I-V curve of InAs vacuum gauges prepared by an embodiment of the invention under different vacuum degrees.
The device comprises a substrate, a cavity, a vacuum electrode, a one-way valve, a vacuum valve, a check valve and an environment to be measured, wherein 1 is the cavity, 2 is a Schottky junction, 21 is a single chip, 22 is an Au nano film, 3 is the vacuum electrode, 4 is an external source meter, 5 is an air source, 6 is the vacuum valve, 7 is the check valve and 8 is the environment to be measured.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
Example 1
A method for measuring vacuum degree adopts a self-made vacuum gauge, as shown in figure 1, and comprises the following specific steps:
(1) cleaning a Zn-doped p-InAs single crystal wafer 21 in absolute ethyl alcohol by using ultrasonic waves once, then putting the cleaned p-InAs single crystal wafer into ion beam sputtering equipment, and sputtering and depositing Au nano films 22 at two ends of the single crystal wafer 21 by using high-purity Au as a target material to form a Schottky junction 2;
(2) placing the prepared Schottky junction 2 in a cavity 1, wherein the cavity is connected with an air source 5 through a pipeline, a vacuum valve 6 and a one-way valve 7 are arranged on the pipeline, then connecting a vacuum electrode 3 on two Au nano films 22, and connecting the vacuum electrode 3 with an external source meter 4;
(3) the cavity 1 is communicated with an air source 5, so that the Schottky junction 2 is in oxygen or air with constant pressure;
(4) opening a vacuum valve 6 between the cavity 1 and an environment 8 to be tested, and testing a current-voltage curve (I-V) of the Schottky junction 2 by using an external power supply meter 4;
(5) and comparing the measured I-V curve with the I-V curve under the known vacuum degree to obtain the pressure of the measured environment.
FIG. 2 shows the I-V curves of the prepared InAs vacuum gauge under different vacuum degrees, and it can be seen that the I-V curves of the vacuum gauge under normal pressure (1atm) and 1Pa air pressure are obviously different, because the contact potential barrier of the Au electrode and the InAs is changed in the adsorption-desorption process of oxygen atoms or molecules on the surface of the InAs semiconductor, and the vacuum degree of the tested environment can be accurately obtained by comparing the tested I-V curve with the I-V curve under the known vacuum degree.
Claims (3)
1. A vacuum degree test method by adopting an InAs vacuum gauge is characterized by comprising the following steps:
(1) opening a vacuum valve connected with a gas source and the cavity, filling gas in the cavity, and then closing the vacuum valve to ensure that the gas pressure in the cavity is constant;
(2) opening a vacuum valve connecting the environment to be tested and the cavity, and testing the current and the voltage of the Schottky junction by using an external source meter to obtain an I-V curve;
(3) comparing the I-V curve measured in the step (2) with the I-V curve under the known vacuum degree to obtain the vacuum degree of the environment to be measured;
the InAs vacuum gauge comprises a cavity, a Schottky junction arranged in the cavity, vacuum electrodes connected with two ends of the Schottky junction, an external source meter connected with the Schottky junction through the vacuum electrodes and an air source communicated with the interior of the cavity, wherein the cavity is provided with a connecting port communicated with an environment to be measured through a pipeline;
the Schottky junction comprises a Zn-doped p-type InAs single crystal wafer and Au nano films arranged at two ends of the single crystal wafer, two ends of the vacuum electrode are connected to the two Au nano films, and the gas source is an oxygen bottle or an air bottle.
2. The vacuum degree test method by using the InAs vacuum gauge according to claim 1, wherein the Au nano-film is connected to two ends of the single chip by sputtering deposition.
3. The vacuum degree test method by using the InAs vacuum gauge according to claim 1, wherein a vacuum valve and a one-way valve are arranged on the connecting pipeline of the air source and the cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201711474894.8A CN108303210B (en) | 2017-12-29 | 2017-12-29 | InAs vacuum gauge and vacuum degree testing method |
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| CN201711474894.8A CN108303210B (en) | 2017-12-29 | 2017-12-29 | InAs vacuum gauge and vacuum degree testing method |
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| Publication Number | Publication Date |
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| CN108303210A CN108303210A (en) | 2018-07-20 |
| CN108303210B true CN108303210B (en) | 2020-04-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN87200798U (en) * | 1987-02-05 | 1987-10-14 | 合肥工业大学 | Wide ranged semiconductor vacuum gauge |
| JP2001015062A (en) * | 1999-06-29 | 2001-01-19 | Japan Atom Energy Res Inst | Control power source for quadrupole electrode of quadrupole mass spectrometer |
| CN102592996A (en) * | 2012-03-05 | 2012-07-18 | 华东师范大学 | Preparation method for Schottky diode based on core/shell structure silicon nanowire set |
| CN105140395B (en) * | 2015-06-15 | 2018-06-26 | 同济大学 | A kind of PN junction diode sensor and preparation method thereof and application |
| CN106092439B (en) * | 2016-06-02 | 2019-04-09 | 广州视源电子科技股份有限公司 | Multi-path pressure meter self-checking unit and its self checking method and self-checking system |
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