CN1851596A - Mass flow controller on-line correction method - Google Patents
Mass flow controller on-line correction method Download PDFInfo
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- CN1851596A CN1851596A CN 200510126345 CN200510126345A CN1851596A CN 1851596 A CN1851596 A CN 1851596A CN 200510126345 CN200510126345 CN 200510126345 CN 200510126345 A CN200510126345 A CN 200510126345A CN 1851596 A CN1851596 A CN 1851596A
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- mass flow
- flow controller
- reaction chamber
- mfc
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Abstract
The present invention includes 1, reading sweeping times parameter before MFC calibration, sweeping tested gas transmission line and vacuum-pumping reaction chamber; 2, opening testing gas transmission line valve, passing in reaction chamber, configuring mass flow controller (MFC) flow rate; 3, after gas flow steady, turning off swing valve, through vacuum gauge to measure whole reaction chamber pressure rising rate in a period of time; 4, through pressure rising rate to calculate obtaining mass flow controller (MFC) flow rate.
Description
Technical field
The present invention relates to microelectronics technology, be specifically related to be used for the on-line testing method of semiconductor equipment air-channel system mass flow controller.
Background technology
The mass rate that needs accurate pilot-gas in the semiconductor equipment; Every kind of different technology of equipment all needs the flowrate proportioning of different gas.As shown in Figure 1, be the structure of a gas circuit of prior art.But mass flow controller MFC in use for some time, because zero point drift may take place a variety of causes.Mass flow controller MFC zero point drift meeting causes the technology instability, and then influences the entire chip yield.Therefore the verification of mass flow controller MFC is most important in semiconductor equipment.
As shown in Figure 2, be the another kind of technical scheme of prior art.It carries out verification than higher mass flow controller MFC or mass flowmeter to the mass flow controller in the whole gas circuit dish by degree of accuracy of polyphone in the gas circuit dish.The deficiency of this scheme is: 1, owing in the gas circuit dish multipath gas is arranged, therefore when the verification of every road mass flow controller being needed, if verification mass flow controller MFC is digital mass flow controller MFC, need to reset the gas classification before the verification of every road.If verification mass flow controller MFC is analog-quality flow controller MFC, when verification, needing the people is conversion gas conversion factor.2, owing in the gas circuit dish multichannel mass flow controller MFC is arranged, the measurement range of each mass flow controller MFC is not quite similar.And the precision of mass flow controller MFC and its range have very big relation, and the method accommodation of the mass flow controller MFC verification mass flow controller MFC that therefore contacts is narrow.
Summary of the invention
(1) technical matters that will solve
The purpose of this invention is to provide and a kind ofly the purpose of this invention is to provide a kind of checking precision height, not limited by gaseous species, can under the situation that semiconductor equipment runs well, realize the on-line testing of mass flow controller.
(2) technical scheme
In order to achieve the above object, the present invention takes following method step:
1) read MFCCaliNumPurgeCycles (MFC calibration before purge number of times) parameter, the gas piping that purging will be tested, and reaction chamber vacuumized;
2) open the gas piping valve of testing, feed reaction chamber, set mass flow controller (MFC) flow;
3) etc. gas flow stable after, close the pendulum valve, measure entire reaction chamber voltage rise rate within a certain period of time by vacuum gauge (CM1);
4) calculate the flow of mass flow controller (MFC) by the voltage rise rate.
Wherein, the flow rate calculation formula of described mass flow controller (MFC) is:
Q＝79*[273/(273+T)]*[V*ΔP/t]
Wherein, T is a reaction chamber temperature, and t is the time, and P is a pressure, and V is a chamber volume.
Wherein, the verification of described mass flow controller should be satisfied: chamber pressure is less than the apparatus settings datum pressure before the verification; Reaction chamber temperature is invariable; The reaction chamber leak rate is less than 1mTorr/minute.
(3) beneficial effect
Compared with the prior art, owing to adopt above scheme, the present invention's energy on-line testing; The verification of mass flow controller is not subjected to the restriction of gaseous species; Can reduce because improve yield of devices the stop time that mass flow controller goes wrong and causes; By different parameters is set, can regulate checking time and checking precision.
Description of drawings
Fig. 1 is the synoptic diagram of a gas circuit mass flow controller of prior art verification;
Fig. 2 is the synoptic diagram of many gas circuit mass flow controllers of prior art verification;
Fig. 3 is the synoptic diagram of mass flow controller method of calibration of the present invention;
Fig. 4 is a mass flow controller single-point verification sequential chart of the present invention;
Fig. 5 is the single-spot testing checking process figure of mass flow controller of the present invention.
Among the figure: HV, hand valve; RV, pressure maintaining valve; PT, pressure transducer; F, filtrator; PV, pneumatic valve; MFC, mass flow controller; CM1, vacuum gauge; 1, gas circuit box; 2, reaction chamber; 3, valve is taken out on the side; 4, molecular pump exhaust valve; 5, molecular pump; 6, dried pump; 7, pendulum valve; T, time; P, pressure; P1, base are pressed; Δ t, time changing value; Δ P, change value of pressure.
Embodiment
Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
As Fig. 3～shown in Figure 5, when implementing, method of the present invention takes steps: 1) read MFCCaliNumPurgeCycles (purging number of times before the MFC calibration) parameter, and the gas piping that purging will be tested, and reaction chamber 2 vacuumized; 2) open the gas piping valve of testing, feed reaction chamber 2, set mass flow controller MFC flow; 3) etc. gas flow stable after, close pendulum valve 7, measure entire reaction chamber 2 voltage rise rate within a certain period of time by vacuum gauge CM1; 4) can instead push away the flow that obtains MFC by the voltage rise rate;
That is, utilize Q=79*[273/ (273+T)] * [V* Δ P/t].
In the above-mentioned formula, T is a reaction chamber temperature, and unit is degree centigrade, and t is the time, and unit is second, and P is a pressure, and unit is Torr, and V is a chamber volume, and unit is for rising (L).
When the present invention carries out verification to mass flow controller MFC, need to guarantee following three conditions:
1, the calibration before chamber pressure less than the apparatus settings datum pressure;
2, keep reaction chamber temperature invariable;
3, the reaction chamber leak rate is less than 1mTorr/minute.
As: the reaction chamber minimum pressure is defined as 50mTorr during the MFC verification; The reaction chamber maximum pressure is defined as 9Torr during the MFC verification; Reaction chamber purging number of times is 5 times before the MFC verification; Is it 100mTorr that base is pressed P1? the MFC stability of flow time is 2 seconds; Checking time Δ t is 60 seconds; Verification volume (chamber volume adds MFC to conduit volume between the reaction chamber) is 30 liters; Reaction chamber temperature T is 60 ℃ during the MFC verification.
Claims (3)
1, a kind of method of mass flow controller on-line correction is characterized in that may further comprise the steps:
1) purge the number of times parameter before reading MFC calibration, the gas piping that purging will be tested, and reaction chamber (2) vacuumized;
2) open the gas piping valve of testing, feed reaction chamber (2), set mass flow controller (MFC) flow;
3) etc. gas flow stable after, close pendulum valve (7), measure entire reaction chamber (2) voltage rise rate within a certain period of time by vacuum gauge (CM1);
4) calculate the flow of mass flow controller (MFC) by the voltage rise rate.
2, the method for a kind of mass flow controller on-line correction as claimed in claim 1 is characterized in that: the flow rate calculation formula of described mass flow controller (MFC) is:
Q＝79*[273/(273+T)]*[V*ΔP/t]
Wherein, T is a reaction chamber temperature, and t is the time, and P is a pressure, and V is a chamber volume.
3, the method for a kind of mass flow controller on-line correction as claimed in claim 1 is characterized in that: the verification of described mass flow controller should be satisfied: chamber pressure is less than the apparatus settings datum pressure before the verification; Reaction chamber temperature is invariable; The reaction chamber leak rate is less than 1mTorr/minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263452A CN100444310C (en) | 2005-12-07 | 2005-12-07 | Mass flow controller on-line correction method |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005101263452A CN100444310C (en) | 2005-12-07 | 2005-12-07 | Mass flow controller on-line correction method |
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| CN1851596A true CN1851596A (en) | 2006-10-25 |
| CN100444310C CN100444310C (en) | 2008-12-17 |
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| CNB2005101263452A Active CN100444310C (en) | 2005-12-07 | 2005-12-07 | Mass flow controller on-line correction method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104750125A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Calibrating method and device for mass flow controller |
| CN106054855A (en) * | 2016-05-25 | 2016-10-26 | 上海华力微电子有限公司 | Calibration system and method of MFC |
| CN109085812A (en) * | 2018-08-28 | 2018-12-25 | 武汉华星光电技术有限公司 | Gas flow monitors system and monitoring and master-slave switching method |
| TWI713078B (en) * | 2016-01-22 | 2020-12-11 | 美商應用材料股份有限公司 | Substrate support and process chamber for controlling the rf amplitude of an edge ring of a capacitively coupled plasma process device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6119710A (en) * | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
| CN2404215Y (en) * | 1999-12-22 | 2000-11-01 | 中国科学院沈阳科学仪器研制中心 | Apparatus for producing non-crystal silicon thin film solar energy battery |
| US6539968B1 (en) * | 2000-09-20 | 2003-04-01 | Fugasity Corporation | Fluid flow controller and method of operation |
| JP4502590B2 (en) * | 2002-11-15 | 2010-07-14 | 株式会社ルネサステクノロジ | Semiconductor manufacturing equipment |
-
2005
- 2005-12-07 CN CNB2005101263452A patent/CN100444310C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104750125A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Calibrating method and device for mass flow controller |
| CN104750125B (en) * | 2013-12-31 | 2017-10-24 | 北京北方华创微电子装备有限公司 | The calibration method and device of a kind of mass flow controller |
| TWI713078B (en) * | 2016-01-22 | 2020-12-11 | 美商應用材料股份有限公司 | Substrate support and process chamber for controlling the rf amplitude of an edge ring of a capacitively coupled plasma process device |
| CN106054855A (en) * | 2016-05-25 | 2016-10-26 | 上海华力微电子有限公司 | Calibration system and method of MFC |
| CN106054855B (en) * | 2016-05-25 | 2018-08-24 | 上海华力微电子有限公司 | A kind of calibration system and method for mass flow controller |
| CN109085812A (en) * | 2018-08-28 | 2018-12-25 | 武汉华星光电技术有限公司 | Gas flow monitors system and monitoring and master-slave switching method |
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| Publication number | Publication date |
|---|---|
| CN100444310C (en) | 2008-12-17 |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |