CN108303210A - A kind of InAs vacuum meters and vacuum monitor method - Google Patents
A kind of InAs vacuum meters and vacuum monitor method Download PDFInfo
- Publication number
- CN108303210A CN108303210A CN201711474894.8A CN201711474894A CN108303210A CN 108303210 A CN108303210 A CN 108303210A CN 201711474894 A CN201711474894 A CN 201711474894A CN 108303210 A CN108303210 A CN 108303210A
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- Prior art keywords
- vacuum
- cavity
- inas
- schottky junction
- measured
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
Abstract
The present invention relates to a kind of InAs vacuum meters and vacuum monitor methods, vacuum meter includes cavity, the setting schottky junction in portion, the vacuum electrode being connect with schottky junction both ends, the external source table being connect with schottky junction by vacuum electrode and the air source being connected to inside cavity in the cavity, the cavity is set there are one connector, and the connector passes through pipeline and environmental communication to be measured；When test, stable gas pressure in holding chamber body, connection cavity and environment to be measured test the I V curves of schottky junction using external source table, and compared with the I V curves under known vacuum degree, obtain the pressure of environment to be measured.Compared with prior art, biggest advantage of the present invention is that preparation method is simple, easy to operate, and measuring accuracy is high, durable, is easy to promote and apply.
Description
Technical field
The present invention relates to vacuum meter technical fields, and in particular to a kind of InAs vacuum meters and vacuum monitor method.
Background technology
Vacuum system is the important component that semi-conducting material prepared, tested system.It is aerobic due to containing in air
The ingredients such as gas and water, material oxidation or introducing impurity, need when growing the semi-conducting materials such as Si, GaAs or thin-film material in order to prevent
Growing system is set to be in vacuum state.For example, when lifting Si monocrystalline using vertical bridgman method, need polycrystalline Si being placed in
In the quartz ampoule of vacuum；Using liquid phase epitaxy method prepare GaAs films when, melting Ga and GaAs mother liquor before, need by
System is extracted into ultra-high vacuum state.Therefore, growing system must be equipped with measuring the vacuum meter of pressure.Currently, commercial vacuum meter
Type it is very much, such as Hg vacuum meter, bourdon tube vacuum meter, thermocouple vacuum ga(u)ge, cathode ion gauge, however, due to
The limitation of design principle, generally existing measurement range is narrow, stability is poor, the problems such as not being durable.
Invention content
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of highly sensitive, Gao Ke
By the InAs vacuum meters and vacuum monitor method of property.
The purpose of the present invention can be achieved through the following technical solutions：A kind of InAs vacuum meters, the vacuum meter include chamber
Body, setting in the cavity the schottky junction in portion, connect with schottky junction both ends vacuum electrode, by vacuum electrode and Schottky
The air source tied the external source table of connection and be connected to inside cavity, the cavity are set there are one connector, and the connector is logical
Cross pipeline and environmental communication to be measured.
The schottky junction includes the p-type InAs single-chips of Zn doping and Au nanometer thins at single-chip both ends is arranged
The doping concentration of film, Zn is 5 × 1016cm-3, the both ends of the vacuum electrode are connected on two Au nano thin-films, to form Xiao
Special base junction.
The Au nano thin-films are connected to the both ends of single-chip by way of sputtering sedimentation.
The air source is oxygen cylinder or air bottle.Oxygen atom in oxygen or air can cause Schottky junction barrier to be sent out
Changing.
The connecting line of the air source and cavity is equipped with vacuum valve and check valve.
A kind of vacuum monitor method carried out using InAs vacuum meters as described above, is included the following steps：
(1) vacuum valve for opening connection air source and cavity, makes to close vacuum valve in cavity after gassy, is in cavity
Air pressure constant；
(2) vacuum valve for connecting environment and cavity to be measured is opened, the electric current and electricity of schottky junction are tested using external source table
Pressure, obtains I-V curve；
(3) due to the adsorption-desorption process change Au electrodes and InAs of the oxygen atom of InAs semiconductor surfaces or molecule
Contact berrier causes I-V curve to change, the I-V curve that step (2) is measured and the I-V curve ratio under known vacuum degree
Compared with the vacuum degree to get the environment to be measured.
Compared with prior art, beneficial effects of the present invention are embodied in：The vacuum meter of the present invention can be made, and make
It is simple to make method, easy to operate, measuring accuracy is high, durable, is easy to promote and apply.
Description of the drawings
Fig. 1 is the structural schematic diagram of the vacuum meter of the present invention；
Fig. 2 is I-V curve of the InAs vacuum meters of the embodiment of the present invention preparation under different vacuum degrees.
Wherein, 1 is cavity, and 2 be schottky junction, and 21 be single-chip, and 22 be Au nano thin-films, and 3 be vacuum electrode, and 4 be outer
Source table is connect, 5 be air source, and 6 be vacuum valve, and 7 be check valve, and 8 be environment to be measured.
Specific implementation mode
It elaborates below to the embodiment of the present invention, the present embodiment is carried out lower based on the technical solution of the present invention
Implement, gives detailed embodiment and specific operating process, but protection scope of the present invention is not limited to following implementation
Example.
Embodiment 1
A kind of method of measurement of vacuum, using homemade vacuum meter, as shown in Figure 1, being as follows：
(1) the p-InAs single-chips 21 with ultrasonic cleaning Zn doping in absolute ethyl alcohol are primary, are subsequently placed into ion beam
It is target using high-purity Au in sputtering equipment, forms Au nano thin-films 22 in 21 both ends sputtering sedimentation of single-chip, making forms Xiao
Special base junction 2；
(2) schottky junction 2 being prepared is placed in cavity 1, wherein the cavity is connect by pipeline with air source 5, and
Vacuum electrode 3, is then connected on two Au nano thin-films 22, and will be true by facility vacuum valve 6 and check valve 7 on the pipeline
Empty electrode 3 is connected with external source table 4；
(3) it is connected to cavity 1 with air source 5, schottky junction 2 is made to be in the oxygen or air of constant pressure；
(4) vacuum valve 6 between cavity 1 and environment to be measured 8 is opened, the electricity of schottky junction 2 is tested using external source table 4
Stream-voltage curve (I-V)；
(5) compare the I-V curve measured and the I-V curve under known vacuum degree, the pressure of test environment can be obtained.
Fig. 2 gives I-V curve of the InAs vacuum meters of preparation under different vacuum degrees, it can be seen that vacuum meter is in normal pressure
I-V curve under (1atm) and 1Pa air pressures has apparent difference, this is because the oxygen atom of InAs semiconductor surfaces or molecule
The contact berrier of adsorption-desorption process change Au electrodes and InAs passes through I-V curve and the I- under known vacuum degree that will be tested
V curves compare, and can accurately obtain the vacuum degree of test environment.
Claims (6)
1. a kind of InAs vacuum meters, which is characterized in that the vacuum meter include cavity, setting in the cavity the schottky junction in portion, with
The vacuum electrode of schottky junction both ends connection, the external source table being connect with schottky junction by vacuum electrode and and inside cavity
The air source of connection, the cavity are set there are one connector, and the connector passes through pipeline and environmental communication to be measured.
2. a kind of InAs vacuum meters according to claim 1, which is characterized in that the schottky junction includes what Zn was adulterated
P-type InAs single-chips and Au nano thin-films at single-chip both ends are set, the both ends of the vacuum electrode are connected to two Au
On nano thin-film.
3. a kind of InAs vacuum meters according to claim 2, which is characterized in that the Au nano thin-films are heavy by sputtering
Long-pending mode is connected to the both ends of single-chip.
4. a kind of InAs vacuum meters according to claim 1, which is characterized in that the air source is oxygen cylinder or air
Bottle.
5. a kind of InAs vacuum meters according to claim 4, which is characterized in that the connecting line of the air source and cavity
It is equipped with vacuum valve and check valve.
6. a kind of vacuum monitor method carried out using the InAs vacuum meters as described in Claims 1 to 5 is any, feature are existed
In including the following steps：
(1) vacuum valve for opening connection air source and cavity, makes to close vacuum valve in cavity after gassy, is the air pressure in cavity
It is constant；
(2) vacuum valve for connecting environment and cavity to be measured is opened, the electric current and voltage of schottky junction are tested using external source table, is obtained
To I-V curve；
(3) I-V curve for measuring step (2) compared with the I-V curve under known vacuum degree to get the true of the environment to be measured
Reciprocal of duty cycle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711474894.8A CN108303210B (en) | 2017-12-29 | 2017-12-29 | InAs vacuum gauge and vacuum degree testing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711474894.8A CN108303210B (en) | 2017-12-29 | 2017-12-29 | InAs vacuum gauge and vacuum degree testing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108303210A true CN108303210A (en) | 2018-07-20 |
| CN108303210B CN108303210B (en) | 2020-04-07 |
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ID=62867691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711474894.8A Active CN108303210B (en) | 2017-12-29 | 2017-12-29 | InAs vacuum gauge and vacuum degree testing method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87200798U (en) * | 1987-02-05 | 1987-10-14 | 合肥工业大学 | Wide ranged semiconductor vacuum gauge |
| JP2001015062A (en) * | 1999-06-29 | 2001-01-19 | Japan Atom Energy Res Inst | Control power source for quadrupole electrode of quadrupole mass spectrometer |
| CN102592996A (en) * | 2012-03-05 | 2012-07-18 | 华东师范大学 | Preparation method for Schottky diode based on core/shell structure silicon nanowire set |
| CN105140395A (en) * | 2015-06-15 | 2015-12-09 | 同济大学 | PN junction diode sensor and manufacturing method and application thereof |
| CN106092439A (en) * | 2016-06-02 | 2016-11-09 | 广州视源电子科技股份有限公司 | Multi-path pressure meter self-checking unit and self checking method thereof and self-checking system |
-
2017
- 2017-12-29 CN CN201711474894.8A patent/CN108303210B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87200798U (en) * | 1987-02-05 | 1987-10-14 | 合肥工业大学 | Wide ranged semiconductor vacuum gauge |
| JP2001015062A (en) * | 1999-06-29 | 2001-01-19 | Japan Atom Energy Res Inst | Control power source for quadrupole electrode of quadrupole mass spectrometer |
| CN102592996A (en) * | 2012-03-05 | 2012-07-18 | 华东师范大学 | Preparation method for Schottky diode based on core/shell structure silicon nanowire set |
| CN105140395A (en) * | 2015-06-15 | 2015-12-09 | 同济大学 | PN junction diode sensor and manufacturing method and application thereof |
| CN106092439A (en) * | 2016-06-02 | 2016-11-09 | 广州视源电子科技股份有限公司 | Multi-path pressure meter self-checking unit and self checking method thereof and self-checking system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108303210B (en) | 2020-04-07 |
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