CN108288663A - A kind of LED chip display module and production method - Google Patents

A kind of LED chip display module and production method Download PDF

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Publication number
CN108288663A
CN108288663A CN201810088091.7A CN201810088091A CN108288663A CN 108288663 A CN108288663 A CN 108288663A CN 201810088091 A CN201810088091 A CN 201810088091A CN 108288663 A CN108288663 A CN 108288663A
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layer
electrode
positive electrode
transparency conducting
epitaxial layer
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CN108288663B (en
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贾钊
赵炆兼
马祥柱
张国庆
陈凯轩
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Yangzhou Changelight Co Ltd
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Yangzhou Changelight Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
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Abstract

The invention discloses a kind of LED chip display module and production methods, the LED chip display module can send out feux rouges due to the epitaxial layer structure of GaAs substrates, the epitaxial layer structure of GaN substrate can send out blue light, and pass through the design of groove structure and spraying green emitting phosphor, so that the epitaxial layer structure of GaN substrate is passed through and different electrode structures is connected, realization sends out blue light and green light, that is, the conducting of three positive electrodes of control can realize that a LED chip display module sends out the light of different base colors, the volume for reducing LED chip display module of high degree, it can be used for making the equipment such as high density pixel display screen when encapsulation display.

Description

A kind of LED chip display module and production method
Technical field
The present invention relates to LED chip manufacturing technology fields, more specifically more particularly to a kind of LED chip display module And production method.
Background technology
With the continuous development of science and technology, various LED chips are widely used to daily life, work In work and industry, bring great convenience for people’s lives.
Light emitting diode (Light Emitting Diode, LED) have it is efficient, low energy consumption, long lifespan, it is pollution-free, Many advantages, such as small, rich in color, is widely used in the fields such as illumination, display and backlight.
But LED chip display module traditional at present is by three kinds of primary colours chips, i.e. red chip, Green Chip And blue chip respectively encapsulates and is independent packaging body recombinant and forms, cause final LED chip display module volume compared with Greatly, it cannot achieve the making of the equipment such as high pixel density screen.
Invention content
To solve the above problems, the present invention provides a kind of LED chip display module and production method, realize at one Three kinds of primary lights, the volume for reducing LED chip display module of high degree are sent out in LED chip, encapsulation can be used when showing In equipment such as making high density pixel display screens.
To achieve the above object, the present invention provides the following technical solutions：
A kind of production method of LED chip display module, the production method include：
GaN substrate is provided；
The first epitaxial layer structure is formed in the GaN substrate, first epitaxial layer structure is performed etching until sudden and violent Expose the GaN substrate, forms groove；
The filling glass glue in the groove, the thickness of the glass cement and the depth of the groove match；
In first epitaxial layer structure the first transparency conducting layer and first are sequentially formed away from the side of the GaN substrate Photoresist layer；
GaAs substrates are provided；
The second epitaxial layer structure is formed on the GaAs substrates；
In second epitaxial layer structure the second transparency conducting layer and the are sequentially formed away from the side of the GaAs substrates Two photoresist layers；
By first photoresist layer together with the second photoresist layer Direct Bonding；
Remove the GaN substrate and the glass cement；
Pass through the first transparency conducting layer described in the recess etch, first photoresist layer and second light blocking Layer forms electrode groove until exposing second transparency conducting layer；
The first positive electrode is set in the electrode groove, first epitaxial layer structure surface in the groove side Green emitting phosphor and the second positive electrode of setting are sprayed, first epitaxial layer structure surface setting the in the groove other side Back electrode is arranged away from the side of second epitaxial layer structure in the GaAs substrates in three positive electrodes.
Optionally, in above-mentioned production method, the production method further includes：
When first positive electrode, second positive electrode, the third positive electrode and the back electrode are provided with Afterwards, elargol film layer is coated away from the side of second epitaxial layer structure in the back electrode, is fixed by the elargol film layer On holder, wherein the first contact electrode, the second contact electrode and third contact electrode are provided on the holder, it is described First positive electrode connect with the first contact electrode, and second positive electrode contacts electrode with described second and connect, and described the Three positive electrodes are connect with third contact electrode.
Optionally, in above-mentioned production method, first transparency conducting layer is the first indium tin oxide transparent conductive layer, institute It is the first SiO to state the first photoresist layer2Layer, the thickness of the first indium tin oxide transparent conductive layer are 3000 angstroms, described first SiO2The thickness of layer is 1um.
Optionally, in above-mentioned production method, second transparency conducting layer is the second indium tin oxide transparent conductive layer, institute It is the 2nd SiO to state the second photoresist layer2Layer, the thickness of the second indium tin oxide transparent conductive layer are 3000 angstroms, described second SiO2The thickness of layer is 1um.
Optionally, in above-mentioned production method, first positive electrode, second positive electrode and the third positive electricity The material identical of pole.
The present invention also provides a kind of LED chip display module, the LED chip display module includes：
GaAs substrates；
The second epitaxial layer structure on the GaAs substrates is set；
Be successively set on second epitaxial layer structure away from the GaAs substrates side the second transparency conducting layer and Second photoresist layer；
Be successively set on second photoresist layer away from second transparency conducting layer side the first photoresist layer and First transparency conducting layer；
The first epitaxial layer structure for deviating from first photoresist layer side in first transparency conducting layer is set；
Through the groove of first epitaxial layer structure, and through first transparency conducting layer, first photoresist Barrier and second photoresist layer, until exposing the electrode groove of second transparency conducting layer；
The first positive electrode in the electrode groove is set, the first epitaxial layer knot in the groove side is set The green emitting phosphor on structure surface and the second positive electrode are arranged on first epitaxial layer structure surface of the groove other side The back electrode for deviating from second epitaxial layer structure side in the GaAs substrates is arranged in third positive electrode.
Optionally, in above-mentioned LED chip display module, the LED chip display module further includes：
The elargol film layer for deviating from second epitaxial layer structure side in the back electrode is set；
The holder being fixedly connected with the elargol film layer, wherein be provided with the first contact electrode on the holder, second connect Touched electrode and third contact electrode, and first positive electrode contacts electrode with described first and connect, second positive electrode and The second contact electrode connection, the third positive electrode are connect with third contact electrode.
Optionally, in above-mentioned LED chip display module, first transparency conducting layer is that the first indium tin oxide transparent is led Electric layer, first photoresist layer are the first SiO2The thickness of layer, the first indium tin oxide transparent conductive layer is 3000 angstroms, institute State the first SiO2The thickness of layer is 1um.
Optionally, in above-mentioned LED chip display module, second transparency conducting layer is that the second indium tin oxide transparent is led Electric layer, second photoresist layer are the 2nd SiO2The thickness of layer, the second indium tin oxide transparent conductive layer is 3000 angstroms, institute State the 2nd SiO2The thickness of layer is 1um.
Optionally, in above-mentioned LED chip display module, first positive electrode, second positive electrode and described The material identical of third positive electrode.
By foregoing description it is found that a kind of production method of LED chip display module provided by the invention, passes through offer GaN substrate；The first epitaxial layer structure is formed in the GaN substrate, first epitaxial layer structure is performed etching until sudden and violent Expose the GaN substrate, forms groove；In first epitaxial layer structure the is sequentially formed away from the side of the GaN substrate One transparency conducting layer and the first photoresist layer；GaAs substrates are provided；The second epitaxial layer structure is formed on the GaAs substrates； Second epitaxial layer structure sequentially forms the second transparency conducting layer and the second photoresist layer away from the side of the GaAs substrates； By first photoresist layer together with the second photoresist layer Direct Bonding；Remove the GaN substrate；By described recessed Groove etched first transparency conducting layer, first photoresist layer and second photoresist layer, until exposing described the Two transparency conducting layers form electrode groove；The first positive electrode is set in the electrode groove, described in the groove side First epitaxial layer structure surface spraying green emitting phosphor and the second positive electrode of setting, outside described the first of the groove other side Prolong a layer body structure surface setting third positive electrode, in the GaAs substrates away from the side of second epitaxial layer structure setting back of the body electricity Pole.
Since GaN epitaxial layer structure can send out blue light, GaAs epitaxial layers can send out feux rouges, therefore in the groove side GaN epitaxial layer is divided into two parts by the first epitaxial layer structure surface spraying green emitting phosphor, i.e. groove, a part of wherein Epitaxial layer structure surface spraying green emitting phosphor so that it is sent out green light, the epitaxial layer structure of another part sends out normal color Blue light, then can realize that a LED chip display module sends out different base colors by the conducting for controlling three positive electrodes Light, the volume for reducing LED chip display module of high degree, encapsulation can be used for making high density pixel display screen when showing Etc. equipment.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow diagram of the production method of LED chip display module provided in an embodiment of the present invention；
Fig. 2-Figure 11 is the corresponding structural schematic diagram of flow diagram shown in FIG. 1 of the embodiment of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real Applying mode, the present invention is described in further detail.
With reference to figure 1, Fig. 1 is that a kind of flow of the production method of LED chip display module provided in an embodiment of the present invention is shown It is intended to.
The production method includes：
S101：GaN substrate is provided.
Specifically, it is generally the case that conventional GaN substrate epitaxial layer LED structure can send out blue light.
S102：The first epitaxial layer structure is formed in the GaN substrate, and first epitaxial layer structure is performed etching directly To the GaN substrate is exposed, groove is formed.
Specifically, as shown in Fig. 2, the concrete form of first epitaxial layer structure and being not construed as limiting, in the GaN substrate The first epitaxial layer structure 12 is formed on 11, it is cleaned later, is carved using ICP etching technics after graphical photoetching Erosion is formed through first epitaxial layer structure 12 until exposing the groove 13 of the GaN substrate 11.
S103：The filling glass glue in the groove, the thickness of the glass cement and the depth of the groove match.
Specifically, as shown in figure 3, the glass cement 14 fills the groove 13 completely, after the completion of filling, consolidate Change operation.
S104：In first epitaxial layer structure the first transparency conducting layer is sequentially formed away from the side of the GaN substrate With the first photoresist layer.
Specifically, as shown in figure 4, first transparency conducting layer 15 including but not limited to the first indium tin oxide transparent is led Electric layer, first photoresist layer 16 include but is not limited to the first SiO2Layer, the first indium tin oxide transparent conductive layer Thickness is 3000 angstroms, the first SiO2The thickness of layer is 1um.
It should be noted that the thickness of the first indium tin oxide transparent conductive layer and the first SiO2The thickness of layer exists It in the embodiment of the present invention and is not construed as limiting, only illustrates by way of example.The first indium tin oxide transparent conductive layer Thickness and the first SiO2The thickness of layer need to be calculated according to the wavelength of made LED chip.
S105：GaAs substrates are provided.
Specifically, it is generally the case that conventional GaAs substrate epitaxial layer LED structures can send out blue light.
S106：The second epitaxial layer structure is formed on the GaAs substrates.
Specifically, as shown in figure 5, the concrete form of second epitaxial layer structure and be not construed as limiting, served as a contrast in the GaAs The second epitaxial layer structure 18 is formed on bottom 17, its epitaxial layer structure is cleaned later.
S107：In second epitaxial layer structure the second transparency conducting layer is sequentially formed away from the side of the GaAs substrates With the second photoresist layer.
Specifically, as shown in fig. 6, second transparency conducting layer 19 including but not limited to the second indium tin oxide transparent is led Electric layer, second photoresist layer 20 include but is not limited to the 2nd SiO2Layer, the second indium tin oxide transparent conductive layer Thickness is 3000 angstroms, the 2nd SiO2The thickness of layer is 1um.
It should be noted that the thickness of the second indium tin oxide transparent conductive layer and the 2nd SiO2The thickness of layer exists It in the embodiment of the present invention and is not construed as limiting, only illustrates by way of example.The second indium tin oxide transparent conductive layer Thickness and the 2nd SiO2The thickness of layer need to be calculated according to the wavelength of made LED chip.
S108：By first photoresist layer together with the second photoresist layer Direct Bonding.
Specifically, as shown in fig. 7, first photoresist layer 16 and second photoresist layer 20 are carried out at activation Reason, later by first photoresist layer 16 together with 20 Direct Bonding of the second photoresist layer.
S109：Remove the GaN substrate and the glass cement.
Specifically, as shown in figure 8, using lift-off technology, GaN substrate 11 is removed and is removed, then removes the glass cement of filling 14, show 13 structure of groove formed in step S102.
S110：Pass through the first transparency conducting layer described in the recess etch, first photoresist layer and second light Barrier layer forms electrode groove until exposing second transparency conducting layer.
Specifically, as shown in figure 9, first being performed etching to first transparency conducting layer 15, formation step structure ensures step The first positive electrode contacts better with first transparency conducting layer 15 in rapid S111, is sequentially etched intermediate region again later First photoresist layer 16 and the second photoresist layer 20 form electrode groove 21 until exposing the second transparency conducting layer 19.
S111：The first positive electrode is set in the electrode groove, the first epitaxial layer knot in the groove side Structure surface spraying green emitting phosphor and the second positive electrode of setting, first epitaxial layer structure surface in the groove other side Third positive electrode is set, back electrode is set away from the side of second epitaxial layer structure in the GaAs substrates.
Specifically, as shown in Figure 10, graphical photoetching the first positive electrode 22, the second positive electrode 23,24 and of third positive electrode Back electrode 26, is made annealing treatment later, later in 12 surface spraying of the first epitaxial layer structure of 13 side of the groove Green emitting phosphor 25.
Optionally, the material phase of first positive electrode 22, second positive electrode 23 and the third positive electrode 24 Together.
Further, as shown in figure 11, when first positive electrode 22, second positive electrode 23, the third positive electricity After pole 24 and the back electrode 26 are provided with, applied away from the side of second epitaxial layer structure 18 in the back electrode 26 Elargol film layer 27 is covered, is fixed on holder 28 by the elargol film layer 27, wherein be provided with the first contact on the holder 28 Electrode 29, second contacts electrode 30 and third contacts electrode 31, and first positive electrode 22 contacts electrode 29 with described first Connection, second positive electrode 23 are connect with the second contact electrode 30, and the third positive electrode 24 is contacted with the third Electrode 31 connects.
It should be noted that step S101- steps S104 makes the chip epitaxial structure of GaN substrate, walked with step S105- Rapid S107 makes point of the chip epitaxial structure there is no sequencing of GaAs substrates, does not limit in embodiments of the present invention It is fixed.
It follows that since the epitaxial layer structure of GaAs substrates can send out feux rouges, the epitaxial layer structure of GaN substrate can be sent out Blue light, and by the design of groove structure and spraying green emitting phosphor, so that the epitaxial layer structure of GaN substrate is passed through conducting different Electrode structure, realization send out blue light and green light, that is to say, that the conducting of three positive electrodes of control can realize a LED core Piece display module sends out the light of different base colors, and the volume for reducing LED chip display module of high degree, encapsulation can when showing For making the equipment such as high density pixel display screen.
Based on the above embodiment of the present invention, a kind of LED chip display module is additionally provided in an alternative embodiment of the invention, As shown in figure 11, the LED chip display module includes：GaAs substrates 17；The second extension on the GaAs substrates is set Layer structure 18；It is successively set on second electrically conducting transparent of second epitaxial layer structure 18 away from the side of the GaAs substrates 17 Layer 19 and the second photoresist layer 20；It is successively set on second photoresist layer 20 and deviates from 19 side of the second transparency conducting layer The first photoresist layer 16 and the first transparency conducting layer 15；Setting deviates from first photoresist in first transparency conducting layer 15 First epitaxial layer structure 12 of 16 side of barrier；Through the groove 13 of first epitaxial layer structure 12, and through described the One transparency conducting layer 15, first photoresist layer 16 and second photoresist layer 20, until it is transparent to expose described second The electrode groove of conductive layer 19；The first positive electrode 22 being arranged in the electrode groove, is arranged in 13 side of the groove The green emitting phosphor 25 and the second positive electrode 23 on 12 surface of the first epitaxial layer structure, are arranged in 13 other side of the groove The third positive electrode 24 on 12 surface of the first epitaxial layer structure, setting deviate from second epitaxial layer in the GaAs substrates 17 The back electrode 26 of 18 side of structure.
Further, as shown in figure 11, the LED chip display module further includes：
The elargol film layer 27 for deviating from 18 side of the second epitaxial layer structure in the back electrode 26 is set；With the elargol The holder 28 that film layer 27 is fixedly connected, wherein be provided on the holder 28 first contact electrode 29, second contact electrode 30 with And third contact electrode 31, first positive electrode 22 with it is described first contact electrode 29 connect, second positive electrode 23 and The second contact electrode 30 connects, and the third positive electrode 24 is connect with third contact electrode 31.
Further, first transparency conducting layer 15 includes but is not limited to the first indium tin oxide transparent conductive layer, institute It includes but is not limited to the first SiO to state the first photoresist layer 162Layer, the thickness of the first indium tin oxide transparent conductive layer are 3000 angstroms, the first SiO2The thickness of layer is 1um.
It should be noted that the thickness of the second indium tin oxide transparent conductive layer and the 2nd SiO2The thickness of layer exists It in the embodiment of the present invention and is not construed as limiting, only illustrates by way of example.The second indium tin oxide transparent conductive layer Thickness and the 2nd SiO2The thickness of layer need to be calculated according to the wavelength of made LED chip.
Further, second transparency conducting layer 19 includes but is not limited to the second indium tin oxide transparent conductive layer, institute It includes but is not limited to the 2nd SiO to state the second photoresist layer 202Layer, the thickness of the second indium tin oxide transparent conductive layer are 3000 angstroms, the 2nd SiO2The thickness of layer is 1um.
It should be noted that the thickness of the second indium tin oxide transparent conductive layer and the 2nd SiO2The thickness of layer exists It in the embodiment of the present invention and is not construed as limiting, only illustrates by way of example.The second indium tin oxide transparent conductive layer Thickness and the 2nd SiO2The thickness of layer need to be calculated according to the wavelength of made LED chip.
Further, the material of first positive electrode 22, second positive electrode 23 and the third positive electrode 24 It is identical.
By foregoing description it is found that the LED chip display module is red since the epitaxial layer structure of GaAs substrates can be sent out The epitaxial layer structure of light, GaN substrate can send out blue light, and by the design of groove structure and spraying green emitting phosphor, so that GaN is served as a contrast The epitaxial layer structure at bottom sends out blue light and green light by the way that different electrode structures, realization is connected, that is to say, that three positive electricity of control The conducting of pole can realize that a LED chip display module sends out the light of different base colors, and high degree reduces LED chip The volume of display module, encapsulation can be used for making the equipment such as high density pixel display screen when showing.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one The widest range caused.

Claims (10)

1. a kind of production method of LED chip display module, which is characterized in that the production method includes：
GaN substrate is provided；
The first epitaxial layer structure is formed in the GaN substrate, first epitaxial layer structure is performed etching until exposing The GaN substrate forms groove；
The filling glass glue in the groove, the thickness of the glass cement and the depth of the groove match；
In first epitaxial layer structure the first transparency conducting layer and the first photoresist are sequentially formed away from the side of the GaN substrate Barrier；
GaAs substrates are provided；
The second epitaxial layer structure is formed on the GaAs substrates；
In second epitaxial layer structure the second transparency conducting layer and the second light are sequentially formed away from the side of the GaAs substrates Barrier layer；
By first photoresist layer together with the second photoresist layer Direct Bonding；
Remove the GaN substrate and the glass cement；
By the first transparency conducting layer described in the recess etch, first photoresist layer and second photoresist layer, directly To second transparency conducting layer is exposed, electrode groove is formed；
The first positive electrode is set in the electrode groove, the first epitaxial layer structure surface spraying in the groove side Third is being arranged just on first epitaxial layer structure surface of the groove other side in green emitting phosphor and the second positive electrode of setting Back electrode is arranged away from the side of second epitaxial layer structure in the GaAs substrates in electrode.
2. manufacturing method according to claim 1, which is characterized in that the production method further includes：
After first positive electrode, second positive electrode, the third positive electrode and the back electrode are provided with, The back electrode coats elargol film layer away from the side of second epitaxial layer structure, and holder is fixed on by the elargol film layer On, wherein the first contact electrode, the second contact electrode and third contact electrode are provided on the holder, described first just Electrode is connect with the first contact electrode, and second positive electrode is connect with the second contact electrode, the third positive electricity Pole is connect with third contact electrode.
3. manufacturing method according to claim 1, which is characterized in that first transparency conducting layer is the first tin indium oxide Transparency conducting layer, first photoresist layer are the first SiO2Layer, the thickness of the first indium tin oxide transparent conductive layer are 3000 angstroms, the first SiO2The thickness of layer is 1um.
4. manufacturing method according to claim 1, which is characterized in that second transparency conducting layer is the second tin indium oxide Transparency conducting layer, second photoresist layer are the 2nd SiO2Layer, the thickness of the second indium tin oxide transparent conductive layer are 3000 angstroms, the 2nd SiO2The thickness of layer is 1um.
5. manufacturing method according to claim 1, which is characterized in that first positive electrode, second positive electrode with And the material identical of the third positive electrode.
6. a kind of LED chip display module, which is characterized in that the LED chip display module includes：
GaAs substrates；
The second epitaxial layer structure on the GaAs substrates is set；
It is successively set on second transparency conducting layer and second of second epitaxial layer structure away from the side of the GaAs substrates Photoresist layer；
It is successively set on the first photoresist layer and first that second photoresist layer deviates from second transparency conducting layer side Transparency conducting layer；
The first epitaxial layer structure for deviating from first photoresist layer side in first transparency conducting layer is set；
Through the groove of first epitaxial layer structure, and through first transparency conducting layer, first photoresist layer With second photoresist layer, the electrode groove up to exposing second transparency conducting layer；
The first positive electrode in the electrode groove is set, the first epitaxial layer structure table in the groove side is set The third on first epitaxial layer structure surface of the groove other side is arranged in the green emitting phosphor in face and the second positive electrode The back electrode for deviating from second epitaxial layer structure side in the GaAs substrates is arranged in positive electrode.
7. LED chip display module according to claim 6, which is characterized in that the LED chip display module is also wrapped It includes：
The elargol film layer for deviating from second epitaxial layer structure side in the back electrode is set；
The holder being fixedly connected with the elargol film layer, wherein the first contact electrode, the second contact electricity are provided on the holder Pole and third contact electrode, and first positive electrode contacts electrode with described first and connect, second positive electrode with it is described Second contact electrode connection, the third positive electrode are connect with third contact electrode.
8. LED chip display module according to claim 6, which is characterized in that first transparency conducting layer is first Indium tin oxide transparent conductive layer, first photoresist layer are the first SiO2Layer, the first indium tin oxide transparent conductive layer Thickness is 3000 angstroms, the first SiO2The thickness of layer is 1um.
9. LED chip display module according to claim 6, which is characterized in that second transparency conducting layer is second Indium tin oxide transparent conductive layer, second photoresist layer are the 2nd SiO2Layer, the second indium tin oxide transparent conductive layer Thickness is 3000 angstroms, the 2nd SiO2The thickness of layer is 1um.
10. LED chip display module according to claim 6, which is characterized in that first positive electrode, described second The material identical of positive electrode and the third positive electrode.
CN201810088091.7A 2018-01-30 2018-01-30 A kind of LED chip display module and production method Active CN108288663B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130112943A1 (en) * 2011-11-09 2013-05-09 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN204088306U (en) * 2014-01-15 2015-01-07 四川新力光源股份有限公司 A kind of white light LEDs module
CN107894678A (en) * 2017-12-29 2018-04-10 西安智盛锐芯半导体科技有限公司 LED backlight, backlight module and liquid crystal display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130112943A1 (en) * 2011-11-09 2013-05-09 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN204088306U (en) * 2014-01-15 2015-01-07 四川新力光源股份有限公司 A kind of white light LEDs module
CN107894678A (en) * 2017-12-29 2018-04-10 西安智盛锐芯半导体科技有限公司 LED backlight, backlight module and liquid crystal display device

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