CN108269867A - Compound solar cell and method for manufacturing light absorption layer - Google Patents
Compound solar cell and method for manufacturing light absorption layer Download PDFInfo
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- CN108269867A CN108269867A CN201710161133.0A CN201710161133A CN108269867A CN 108269867 A CN108269867 A CN 108269867A CN 201710161133 A CN201710161133 A CN 201710161133A CN 108269867 A CN108269867 A CN 108269867A
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- Prior art keywords
- layer
- semiconductor layer
- slurry
- solar cell
- light absorbing
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 25
- 230000031700 light absorption Effects 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 25
- 239000011591 potassium Substances 0.000 claims abstract description 25
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 8
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 6
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002002 slurry Substances 0.000 claims description 62
- 239000002243 precursor Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 32
- 239000002904 solvent Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 150000001339 alkali metal compounds Chemical class 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 239000002585 base Substances 0.000 claims description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 230000001680 brushing effect Effects 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical group [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 78
- 239000011698 potassium fluoride Substances 0.000 description 44
- 235000003270 potassium fluoride Nutrition 0.000 description 39
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 20
- 239000013078 crystal Substances 0.000 description 18
- 239000010409 thin film Substances 0.000 description 15
- 238000013507 mapping Methods 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 238000000137 annealing Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052793 cadmium Inorganic materials 0.000 description 8
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 230000005693 optoelectronics Effects 0.000 description 7
- 238000005215 recombination Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 5
- 238000004073 vulcanization Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MQZGYYYBCTXEME-UHFFFAOYSA-N [Rb][Rb] Chemical compound [Rb][Rb] MQZGYYYBCTXEME-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical group O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
A compound solar cell comprises a first electrode, a second electrode, a first type doped semiconductor layer and a second type doped semiconductor layer. The first type doped semiconductor layer is arranged between the first electrode and the second electrode, and the second type doped semiconductor layer is arranged between the first type doped semiconductor layer and the second electrode. The first type doped semiconductor layer has a first side near the first electrode and a second side near the second type doped semiconductor layer. The first-type doped semiconductor layer includes at least one of a plurality of elements, and the elements include potassium, rubidium, and cesium. At least one of these elements has a higher concentration at the first side than at the second side. In addition, a manufacturing method of the light absorption layer is also provided.
Description
Technical field
The invention relates to a kind of solar cell, and in particular to a kind of compound solar cell and light
The production method of absorbed layer.
Background technology
Solar cell by development all the year round, energy conversion efficiency (power conversion efficiency),
There is significant progress on stability and various efficiency indexs.In recent years, it is many due to the development in response to solar cell slimization
Efficient thin-film solar cells is also developed.Thin-film solar cells can be divided into numerous species according to material technology, such as
Non-crystalline silicon (a-Si), cadmium telluride (CdTe), copper indium selenide (CIS), copper indium gallium selenide (CIGS) thin-film solar cells etc..Wherein,
The light absorbing layer of copper-indium-galliun-selenium film solar cell is CIGS thin-film.CIGS thin-film is direct gap (direct
Bandgap semi-conducting material), and it can carry out light absorption, therefore CIGS thin-film is too in large range of solar spectrum
Positive energy battery has high-photoelectric transformation efficiency.
In general, light absorbing layer can excite generation electron hole pair after absorbing luminous energy, (p-n is tied positioned at P/N
Junction electron hole pair) can isolate electronics and hole, and electronics is exported with hole by semi-conducting material, into
And generate electric current.However, during derived from electrons and holes, easily make electron-hole recombinations due to film quality is when factors
(recombination) probability improves, and reduces the photoelectric conversion efficiency of solar cell.In order to keep good film matter
For amount to reduce the probability of electron-hole recombinations, the general method for making CIGS thin-film can use vacuum technology, e.g. common
The technology modes such as (co-evaporation) method and two-stage selenizing (sequential method) method are deposited.However, vacuum
It is higher that technique can so that solar cell integrally manufactures cost, and the process time is longer.Therefore, the light of high quality how is produced
Absorbed layer simultaneously meets inexpensive and quick Fabrication principle, and actually current developer desires most ardently one of target reached.
Invention content
The compound solar cell of the embodiment of the present invention includes first electrode, second electrode, the first type doped semiconductor
Layer and Second-Type doping semiconductor layer.First type doping semiconductor layer is configured between first electrode and second electrode, and
Second-Type doping semiconductor layer is configured between the first type doping semiconductor layer and second electrode.First type doping semiconductor layer
With close to the first side of first electrode and the second side close to Second-Type doping semiconductor layer.First type doping semiconductor layer
Include at least one of multiple elements, and these elements include potassium, rubidium and caesium.At least one of these elements exists
The concentration of first side is higher than the concentration in the second side.
The production method of the light absorbing layer of the embodiment of the present invention includes：Precursor layer is formed on substrate.Precursor layer packet
Multiple nano-particles are included, and the material of these nano-particles includes Cu oxide, indium oxide and gallium oxide；Slurry is provided
In in precursor layer, wherein the material of slurry includes alkali metal compound；And slurry and precursor layer are heat-treated.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is detailed that attached drawing is coordinated to make
Carefully it is described as follows.
Description of the drawings
Figure 1A to Fig. 1 F is painted the production process figure of the compound solar cell of one embodiment of the invention.
Fig. 2 is painted constituent content point of the light absorbing layer in different depth of the compound solar cell of Fig. 1 F embodiments
Analysis.
Fig. 3 A to Fig. 3 D are painted the different parameters of the opto-electronic conversion of the compound solar cell of Fig. 1 F embodiments to fluorination
The mapping of concentration of the potassium in slurry.
Fig. 4 A are painted constituent content point of the light absorbing layer in different depth for the compound solar cell for whetheing there is potassium fluoride
Analysis.
Fig. 4 B are painted the current vs voltage curve (I-V curve) for the compound solar cell for whetheing there is potassium fluoride.
Fig. 5 A to Fig. 5 D are painted the table of the different parameters of the opto-electronic conversion of the compound solar cell of a comparing embodiment
It is existing.
Fig. 6 A to Fig. 6 D are painted the different parameters of the opto-electronic conversion of the compound solar cell of another comparing embodiment
Performance.
The production method that Fig. 7 is painted the light absorbing layer of one embodiment of the invention.
【Symbol description】
100：Compound solar cell
110：First electrode
120：First type doping semiconductor layer
122：Element
130：Second-Type doping semiconductor layer
140：Second electrode
142：Native oxide zinc layers
144：Transparency conducting layer
150：Electrode
190：Slurry
192：Alkali metal compound
194：Solvent
A：Region
AL：Light absorbing layer
P1、P2：Point
PrL：Precursor layer
S1：First side
S2：The second side
S710、S720、S730：The step of production method of light absorbing layer
SUB：Substrate
T：Thickness
Specific embodiment
Figure 1A to Fig. 1 F is painted the production process figure of the compound solar cell of one embodiment of the invention, please refer to figure
1A.In the present embodiment, first, substrate SUB is provided, and forms first electrode 110 on substrate SUB.Specifically, first
Back electrode of the electrode 110 as compound solar cell 100 (as depicted in Fig. 1 F) can include molybdenum
(Molybdenum), silver, aluminium, chromium (Chromium), titanium (Titanium), nickel (Nickel), golden or combination.For example,
First electrode 110 can be the molybdenum electrode being sputtered on substrate SUB.Then, B is please referred to Fig.1, forms precursor layer PrL in base
On plate SUB.Specifically, precursor layer PrL is formed in first electrode 110, and first electrode 110 be located at substrate SUB and
Between precursor layer PrL.In the present embodiment, precursor layer PrL includes multiple nano-particles (nanoparticles, NPs),
And the material of these nano-particles includes Cu oxide, indium (Indium) oxide and gallium (Gallium) oxide.It is specific and
Speech, precursor layer PrL is, for example, copper and indium gallium (CIG) metal precursor, be may, for example, be through selenizing (Selenization)
It is thin that copper indium gallium selenide (CIGS) is formed after the arbitrary combination of processing, vulcanization (Sulfurization) processing or selenizing and vulcanization
Film.For example, precursor layer PrL can by selenizing after cure (Sulfurization After Selenization,
SAS CIGS thin-film is formed after) handling, the present invention is not limited thereto.In addition, in the present embodiment, form predecessor
Layer PrL in the method on substrate SUB be, for example, include coating predecessor on substrate SUB to form precursor layer PrL.By painting
The practice of cloth, these oxides in precursor layer PrL can hold the form of nano-particle.However, in some embodiments
In, precursor layer PrL can also be formed by other processes on substrate SUB, the present invention is not limited thereto.
Then, C is please referred to Fig.1, provides slurry 190 on precursor layer PrL, and the material of slurry 190 includes alkali metal
Compound 192.Specifically, slurry 190 further includes solvent 194, and alkali metal compound 192 be dispersed evenly to solvent 194 it
In.Specifically, alkali metal compound 192 includes at least one of multiple elements 122, and these elements 122 include potassium
(Potassium), rubidium (Rubidium) and caesium (Cesium).For example, the alkali metal compound 192 of the present embodiment is fluorine
Change potassium (Potassium fluoride, KF).In addition, solvent 194 may, for example, be including water, alcohols solvent, esters solvent, ketone
Class solvent, ether solvent, amine solvent, acids solvent, bases solvent or combination, and alkali metal compound 192 is in slurry 190
In concentration expressed in percentage by weight be, for example, fall in the range of 0.01% to 0.6%.In the present embodiment, slurry 190 is provided in preceding
Drive that the method on nitride layer PrL includes being coated with by capillary, rotary coating, brushing, blade coating, spray coating or printing apply
Cloth, with coating sizing-agent 190 on precursor layer PrL.Specifically, in some related embodiments, the selection of solvent 194, alkali
Concentration and offer slurry 190 of the metallic compound 192 in slurry 190 can foundations in the process on precursor layer PrL
Actual process demand and adjusted, the present invention is not limited thereto.In addition, in the present embodiment, by uniformly applying coated with carrying
Film layer can be formed, and the thickness T of this film layer is the model fallen at 3 nanometers to 100 nanometers for the slurry 190 on precursor layer PrL
In enclosing.However, it in some embodiments, according to actual process demand, coats to the film layer of the slurry 190 on precursor layer PrL
There can also be other thickness, the present invention is also not limited.
D is please referred to Fig.1, provides slurry 190 after on precursor layer PrL, slurry 190 is dried processing so that molten
Agent 194 is volatilized.Specifically, it is, for example, to carry out appropriate heating to the slurry 190 on precursor layer PrL to promote that this, which is dried,
Solvent 194 is made to volatilize, and the temperature of its heating is, for example, to be less than or equal to 100° centigrade.It alternatively, can also be by precursor layer
Slurry 190 on PrL stands a period of time so that its natural air drying.
Then, E is please referred to Fig.1, in the present embodiment, slurry 190 and precursor layer PrL are heat-treated.Specifically
For, this heat treatment e.g. selenization or selenizing after cure processing.Specifically, slurry 190 and precursor layer PrL
This heat-treating methods is carried out to include：Slurry 190 and precursor layer PrL are placed in gaseous environment, wherein this gaseous environment
Include the gas of Group VIA element.In addition, this gaseous environment gas such as further including air, nitrogen, hydrogen, argon gas and/or ammonia
Body, and the air pressure of this gaseous environment is, for example, to fall in the range of 10-4 holds in the palm (torr) to 760 supports.In addition to this, this Ring
The temperature in border is, for example, to fall in the range of 300 degree Celsius to 600 degree Celsius, and the time for carrying out this heat treatment is, for example, to fall
In the range of 1 minute to 300 minutes.Specifically, it is appropriate to be set according to practical progress process of thermal treatment demand
Gaseous environment and the appropriate relevant parameter of setting, the present invention is not limited thereto.
Please continue to refer to Fig. 1 E, in the present embodiment, during heat treatment, these nanoparticles of precursor layer PrL
Son, which can for example grow up, copper indium gallium selenide crystal, and copper indium gallium selenide crystal can continue long brilliant and form CIGS thin-film.Specifically
For, this CIGS thin-film is for example exactly the light absorbing layer AL of compound solar cell 100, while is also solar cell
100 the first type doping semiconductor layer 120.In some related embodiments, by these nano-particles of precursor layer PrL
The gas of material selection and the gaseous environment being heat-treated select, the first type doping semiconductor layer 120 can be for example including
IB races element, Group IIIA element, Group VIA element or combination.Alternatively, the first type doping semiconductor layer 120 can be for example including
IB races element, Group IIB element, IVA races element, Group VIA element or combination, the present invention is not limited thereto.In addition, in detail and
Speech, during the copper indium gallium selenide crystal length of the present embodiment is brilliant, these elements 122 of alkali metal compound 192 can enter copper
Indium gallium selenium crystal structure, and be distributed among CIGS thin-film surface, crystal structure and its crystal boundary (grain boundary)
Among.
F is please referred to Fig.1, in the present embodiment, then, in sequentially forming Second-Type on the first type doping semiconductor layer 120
Doping semiconductor layer 130, second electrode 140 and electrode 150 use the making for completing compound solar cell 100.Specifically
For, compound solar cell 100 includes aforesaid substrate SUB, first electrode 110, the first type doping semiconductor layer 120, the
Two type doping semiconductor layers 130, second electrode 140 and electrode 150.First electrode 110 is configured at the first type doped semiconductor
Between 120 and substrate SUB of layer.First type doping semiconductor layer 120 be configured at first electrode 110 and second electrode 140 it
Between, and Second-Type doping semiconductor layer 130 is configured between the first type doping semiconductor layer 120 and second electrode 140.First
The one of which of type doping semiconductor layer 120 and Second-Type doping semiconductor layer 130 is n-type doping semiconductor layer, and first
The wherein another one of type doping semiconductor layer 120 and Second-Type doping semiconductor layer 130 is p-type doping semiconductor layer.
Specifically, compound solar cell 100 is, for example, copper-indium-galliun-selenium film solar cell.Substrate SUB is for example
It is flexible substrates or the not flexible substrates such as stainless steel substrates, soda-lime glass (soda-lime glass, SLG).The doping of first type is partly led
Body layer 120 is, for example, the CIGS thin-film with p-type doping and is used as light absorbing layer AL, and first electrode 110 is, for example, suitable
In the molybdenum back electrode that Ohmic contact (ohmic contact) is formed with CIGS thin-film.In addition, Second-Type doping semiconductor layer
130 be, for example, cadmium sulfide (cadmium sulfide, CdS) buffer layer with n-type doping, and second electrode 140 is, for example, to wrap
Intrinsic zinc oxide (intrinsic zinc oxide, the i-ZnO) layer 142 mutually stacked and transparency conducting layer 144 are included, and intrinsic
Zinc oxide film 142 is configured between transparency conducting layer 144 and Second-Type doping semiconductor layer 130.Specifically, transparency conducting layer
144 be, for example, Al-Doped ZnO (Al-doped zinc oxide, AZO) or other kinds of transparent conductive film, the present invention
It is not limited thereto.In addition, the electrode 150 contacted with second electrode 140 is for example designed as strip, to avoid shading.One
In a little embodiments, compound solar cell 100 can also be other kinds of compound solar cell, the present invention not with
This is limited.
In the present embodiment, light is, for example, to enter compound solar cell 100 by the side of second electrode 140.As
The first type doping semiconductor layer 120 for light absorbing layer AL can excite generation electron hole pair after absorbing luminous energy.First type adulterates
P/N knots (p-n junction) are formed between semiconductor layer 120 and Second-Type doping semiconductor layer 130, and positioned at P/N knots
Electron hole pair can isolate electronics and hole, and electronics and hole are, for example, to pass through Second-Type doping semiconductor layer respectively
130 and first type doping semiconductor layer 120 and be exported, and connect respectively by second electrode 140 and first electrode 110
It receives, and then generates electric current.
Specifically, in the present embodiment, the first type doping semiconductor layer 120 has first close to first electrode 110
The side S1 and the second side S2 close to Second-Type doping semiconductor layer 130.First type doping semiconductor layer 120 includes multiple elements
At least one of 122 (multiple elements 122 of such as aforementioned alkali-metal compound 192), and these elements 122 include potassium, rubidium
And caesium.For example, the alkali metal compound 192 of the present embodiment be potassium fluoride, and via heat treatment after, it is at least most of
Fluorine (fluorine) can vapor away, and cause the member included by the first type doping semiconductor layer 120 (light absorbing layer AL) formed
Element 122 be potassium, and potassium can be distributed among the CIGS thin-film surface of the first type doping semiconductor layer 120, crystal structure and
Among its crystal boundary.Specifically, at least one due to these elements 122 can be during heat treatment, by thermal expansion
Dissipate and pass through precursor layer PrL these nano-particles between gap and move down, therefore these elements 122 at least its
One of have appropriate concentration distribution in the first type doping semiconductor layer 120.Specifically, these elements 122 at least its
One of the first side S1 concentration be higher than the second side S2 concentration.That is, in the present embodiment, potassium is distributed in first
Type doping semiconductor layer 120 (light absorbing layer AL) is higher than the concentration far from substrate SUB in the concentration close to substrate SUB.It is specific and
Speech, potassium are distributed in concentration of the first type doping semiconductor layer 120 in the first side S1 close to first electrode 110 and are higher than close to the
The concentration of the second side S2 of two type doping semiconductor layers 130.In some embodiments, also can forerunner be formed by above-mentioned process
Nitride layer PrL forms light absorbing layer AL on substrate SUB on substrate SUB, and with above-mentioned identical implementation steps, wherein above-mentioned
At least one of these elements 122 in light absorbing layer AL is higher than in the concentration close to substrate SUB far from the dense of substrate SUB
Degree.
In the present embodiment, due to the CIGS thin-film surface of the first type doping semiconductor layer 120, crystal structure and its
Crystal boundary has appropriate potassium concn distribution, therefore material interface (is, for example, the first type doping semiconductor layer 120 and Second-Type doping
Semiconductor layer 130) or the crystal boundary of the first type doping semiconductor layer 120 on the defects of (defect) energy band (bandgap) can fall
In fermi level (Fermi level) below.That is, potassium can provide the passivation of material interface and crystal boundary
(passivation) effect.When carrier is by above-mentioned material interface or above-mentioned crystal boundary, carrier occurs compound
(recombination) probability is minimized.In addition to this, in the present embodiment, to slurry 190 and precursor layer
During PrL is heat-treated to form the first type doping semiconductor layer 120 (copper indium gallium selenide crystal structure), potassium can be occupied first
The vacancy of copper among lattice.When cadmium sulfide (Second-Type doping semiconductor layer 130) is formed in copper indium gallium selenide crystalline substance in a manner of deposition
When in body structure, cadmium can also occupy the vacancy of copper.At this point, the potassium in vacancy for occupying copper originally can leave, generate more for cadmium
The vacancy of the copper occupied.Therefore, more cadmium can take up the vacancy of copper so that copper indium gallium selenide crystal film surface and vulcanization
P/N knots between cadmium can reach more good level-density parameter.In the present embodiment, based on Carrier recombination probability reduce and
Factors, the compound solar cells 100 such as P/N knot level-density parameter improvement can be had in the case of using adopting non-vacuum process
Higher open-circuit voltage (open circuit voltage, Voc) and fill factor (fill factor, FF), so with compared with
Good energy conversion efficiency (power conversion efficiency, PCE).
Fig. 2 is painted constituent content point of the light absorbing layer in different depth of the compound solar cell of Fig. 1 F embodiments
Analysis, please refers to Fig.2.The longitudinal axis of Fig. 2 represents to measure the signal strength size of 100 constituent content of compound solar cell, list
Position is counting/second, and horizontal axis represents that compound solar cell 100 is started by second electrode 140 and prolonged towards first electrode 110
The depth stretched, unit are nanometer.The depth bounds defined between two dotted lines in Fig. 2 represent 120 institute of the first type doping semiconductor layer
Depth bounds.In addition, Fig. 2 mark " S ", " Se ", " Ga ", " In ", " Cu ", " Na " and " K " respectively represent sulphur, selenium,
Gallium, indium, copper, sodium and potassium element.In the present embodiment, it can be seen that it is close that potassium is distributed in the first type doping semiconductor layer 120
The concentration of the side of first electrode 110 is generally higher than the concentration close to the side of Second-Type doping semiconductor layer 130.
Fig. 3 A to Fig. 3 D are painted the different parameters of the opto-electronic conversion of the compound solar cell of Fig. 1 F embodiments to fluorination
The mapping of concentration of the potassium in slurry, to present when slurry 190 of the offer with various concentration potassium fluoride is on precursor layer PrL
When, the performance of the opto-electronic conversion of compound solar cell 100.Specifically, Fig. 3 A are painted compound solar cell 100
The mapping of concentration of the open-circuit voltage to potassium fluoride in slurry 190.The longitudinal axis of Fig. 3 A represents open-circuit voltage, and unit is millivolt,
And horizontal axis represents concentration of the potassium fluoride in slurry, unit is percentage.Fig. 3 B are painted the short of compound solar cell 100
The mapping of concentration of the road electric current to potassium fluoride in slurry.The longitudinal axis of Fig. 3 B represents short circuit current (short-circuit
Current, Jsc), unit is milliampere/square centimeter, and horizontal axis represents concentration of the potassium fluoride in slurry, unit hundred
Divide ratio.Fig. 3 C are painted the mapping of concentration of the fill factor of compound solar cell 100 to potassium fluoride in slurry.Fig. 3 C's
The longitudinal axis represents fill factor, and unit is percentage, and horizontal axis represents concentration of the potassium fluoride in slurry, and unit is percentage
Than.Fig. 3 D are painted the mapping of concentration of the energy conversion efficiency of compound solar cell 100 to potassium fluoride in slurry.Fig. 3 D
The longitudinal axis represent energy conversion efficiency, unit is percentage, and horizontal axis represents concentration of the potassium fluoride in slurry, and unit is
Percentage.In Fig. 3 A to Fig. 3 D, concentration of the potassium fluoride in slurry is 0%, 0.25%, 0.5%, 0.75% and 1%
Experiment condition corresponds respectively to the experimental data point indicated with different shape.For example, in figure 3 a, it is equally indicated with circle
Experimental data point be represent concentration of the potassium fluoride in slurry at 0.25% not homogeneous experiment obtained by data point.By from figure
3A to Fig. 3 D can be seen that when the material of slurry 190 includes alkali metal compound such as potassium fluoride, compound solar cell
100 open-circuit voltage and fill factor can all increase, and compound solar cell 100 has higher energy conversion effect
Rate.
Fig. 4 A are painted constituent content point of the light absorbing layer in different depth for the compound solar cell for whetheing there is potassium fluoride
Analysis, please refers to Fig.4 A.The longitudinal axis of Fig. 4 A and the mark of horizontal axis illustrate that being identical to the longitudinal axis of Fig. 2 and the mark of horizontal axis respectively illustrates,
Details are not described herein." Cu " and " Cd " indicated in Fig. 4 represents copper and cadmium element respectively.Indicate the curve of " having potassium fluoride "
Represent the compound solar cell 100 such as Fig. 1 F embodiments, and the curve for indicating " fluoride-free potassium " represents a comparing embodiment
Compound solar cell.Not to include the slurry of potassium fluoride in the technique of the compound solar cell of this comparing embodiment
Material is coated in precursor layer.Specifically, the dotted line position in Fig. 4 A represents institute near the P/N knots of compound solar cell
Position.It can be seen from Fig. 4 A in region a, due to its first type of the compound solar cell 100 of Fig. 1 F embodiments
There is doping semiconductor layer 120 appropriate potassium concn to be distributed, therefore more the cadmium near P/N knots can take up the vacancy of copper,
So that in region a, the rapid determination of content of cadmium element of compound solar cell 100 is higher than the compound solar cell of comparing embodiment
Rapid determination of content of cadmium element.
Fig. 4 B are painted the current vs voltage curve (I-V curve) for the compound solar cell for whetheing there is potassium fluoride, please join
Examine Fig. 4 B.The longitudinal axis of Fig. 4 B represents current density, and unit is milliampere/square centimeter, and horizontal axis represents voltage, and unit is milli
Volt.The curve for indicating " having potassium fluoride " represents the compound solar cell 100 of such as Fig. 1 F embodiments, and indicates " fluoride-free potassium "
Curve represent a comparing embodiment compound solar cell.The technique of the compound solar cell of this comparing embodiment
In be not coated in precursor layer with including the slurry of potassium fluoride.Specifically, the voltage minute corresponding to point P1 and point P2
Not Wei compound solar cell 100 and comparing embodiment compound solar cell open-circuit voltage.By Fig. 4 B it is found that
The open-circuit voltage of compound solar cell 100 is more than the open-circuit voltage of the compound solar cell of comparing embodiment.
Fig. 5 A to Fig. 5 D are painted the table of the different parameters of the opto-electronic conversion of the compound solar cell of a comparing embodiment
It is existing.In the technique of the compound solar cell of this comparing embodiment, the slurry comprising potassium fluoride be coated in via heat at
It manages on the light absorbing layer formed, and potassium is made into light absorbing layer by (annealing) technique of annealing again.Specifically, scheme
5A is painted the mapping of concentration of the open-circuit voltage of the compound solar cell of this comparing embodiment to potassium fluoride in slurry.Figure
The longitudinal axis of 5A represents open-circuit voltage, and unit is millivolt, and horizontal axis represents concentration of the potassium fluoride in slurry, and unit is percentage
Than.Fig. 5 B are painted the work of concentration of the short circuit current of the compound solar cell of this comparing embodiment to potassium fluoride in slurry
Figure.The longitudinal axis of Fig. 5 B represents short circuit current, and unit is milliampere/square centimeter, and horizontal axis represents that potassium fluoride is dense in slurry
Degree, unit are percentage.The fill factor that Fig. 5 C are painted the compound solar cell of this comparing embodiment exists to potassium fluoride
The mapping of concentration in slurry.The longitudinal axis of Fig. 5 C represents fill factor, and unit is percentage, and horizontal axis represents that potassium fluoride is being starched
Concentration in material, unit are percentage.Fig. 5 D are painted the energy conversion effect of the compound solar cell of this comparing embodiment
The mapping of concentration of the rate to potassium fluoride in slurry.The longitudinal axis of Fig. 5 D represents energy conversion efficiency, and unit is percentage, and horizontal
Axis represents concentration of the potassium fluoride in slurry, and unit is percentage.Fig. 3 A to Fig. 3 D and Fig. 5 A to Fig. 5 D are compared, it can
Know that compound solar cell 100 is showed with more good component, and compound solar cell 100 has higher energy
Transfer efficiency.
Fig. 6 A to Fig. 6 D are painted the different parameters of the opto-electronic conversion of the compound solar cell of another comparing embodiment
Performance.In the technique of the compound solar cell of this comparing embodiment, potassium fluoride is in a manner that vacuum evaporation is plus annealing
Into in the light absorbing layer formed via heat treatment.Specifically, Fig. 6 A are painted the compound solar of this comparing embodiment
Mapping of the open-circuit voltage of battery to different annealing temperature.The longitudinal axis of Fig. 6 A represents open-circuit voltage, and unit is millivolt, and horizontal axis
Represent different annealing temperatures.Fig. 6 B are painted the short circuit current of the compound solar cell of this comparing embodiment to different annealing
The mapping of temperature.The longitudinal axis of Fig. 6 B represents short circuit current, and unit is milliampere/square centimeter, and horizontal axis represents different annealing
Temperature.Fig. 6 C are painted mapping of the fill factor to different annealing temperature of the compound solar cell of this comparing embodiment.Figure
The longitudinal axis of 6C represents fill factor, and unit is percentage, and horizontal axis represents different annealing temperatures.It is more real that Fig. 6 D are painted this
Apply mapping of the energy conversion efficiency to different annealing temperature of the compound solar cell of example.The longitudinal axis of Fig. 6 D represents that energy turns
Efficiency is changed, unit is percentage, and horizontal axis represents different annealing temperatures.In addition, in Fig. 6 A to Fig. 6 D, indicate " reference "
The control group condition of potassium fluoride is not deposited for expression.It indicates " 375 DEG C of KF " and represents that base when copper indium gallium selenide surface is deposited in potassium fluoride
Plate temperature is 375 degree Celsius.Indicating " 375 DEG C of KF (KCN) " represents copper indium gallium selenide surface first with potassium cyanide (Potassium
Cyanide after) being etched, the surface vapor deposition potassium fluoride after its etching, and substrate temperature during vapor deposition potassium fluoride is takes the photograph
375 degree of family name.It indicates " 425 DEG C of KF " and represents that substrate temperature of potassium fluoride vapor deposition when copper indium gallium selenide surface is 425 degree Celsius.Separately
Outside, after mark " 425 DEG C of KF (KCN) " represents that copper indium gallium selenide surface is first etched with potassium cyanide, the surface after its etching
Substrate temperature when potassium fluoride is deposited, and potassium fluoride is deposited is 425 degree Celsius.Specifically, by Fig. 3 A to Fig. 3 D and Fig. 6 A extremely
Fig. 6 D are compared, it is known that compound solar cell 100 is showed with more good component, and compound solar cell
100 have higher energy conversion efficiency.
The production method that Fig. 7 is painted the light absorbing layer of one embodiment of the invention, please refers to Fig. 7.In the present embodiment, it is described
The production method of light absorbing layer may at least apply for the light absorbing layer AL of the compound solar cell 100 of Fig. 1 F embodiments
(the first type doping semiconductor layer 120).The production method following steps of the light absorbing layer.In step S710, forerunner is formed
Nitride layer is on substrate, and precursor layer includes multiple nano-particles, and the material of these nano-particles includes Cu oxide, indium aoxidizes
Object and gallium oxide.In step S720, slurry is provided in precursor layer, wherein the material of slurry includes alkali metal chemical combination
Object.In addition, in step S730, slurry and precursor layer are heat-treated.Specifically, the light of the embodiment of the present invention
The production method of absorbed layer at least can be by obtaining enough introductions, suggestion and implementation in the narration of the embodiment of Figure 1A to Fig. 1 F
Illustrate, therefore repeat no more.
In conclusion in the production method of the light absorbing layer of the embodiment of the present invention, precursor layer includes multiple nano-particles,
And the material of these nano-particles includes Cu oxide, indium oxide and gallium oxide.In addition, the production method of light absorbing layer
Including providing slurry in this precursor layer, and the material of slurry includes alkali metal compound.The compound of the embodiment of the present invention
Solar cell by the light absorbing layer made by above-mentioned production method to be used as the first type doping semiconductor layer, therefore first
Type doping semiconductor layer includes at least one of multiple elements, and these elements include the alkali metal such as potassium, rubidium and caesium member
Element.In addition, at least one of these alkali metal elements has appropriate concentration point among the first type doping semiconductor layer
Cloth.Since alkali metal element can be during being heat-treated such as the arbitrary combination of selenizing, vulcanization or selenizing and vulcanization, distribution
Among the surface of light absorbing layer, crystal structure and crystal boundary so that the material interface of light absorbing layer and the passivation effect of crystal boundary obtain
To generate, and the recombination probability of electron hole can be reduced.In addition, P/N knots can also reach more good level-density parameter.Cause
This, compound solar cell can have higher open-circuit voltage and fill factor in the case of using adopting non-vacuum process,
And then with preferable energy conversion efficiency.
Although the present invention has been disclosed by way of example above, it is not intended to limit the present invention., any technical field
Middle those of ordinary skill, without departing from the spirit and scope of the present invention, when can make some changes and embellishment, therefore the present invention
Protection domain is subject to claims institute defender.
Claims (16)
1. a kind of compound solar cell, which is characterized in that including：
First electrode；
Second electrode；
First type doping semiconductor layer, is configured between the first electrode and the second electrode and Second-Type adulterates
Semiconductor layer is configured between the first type doping semiconductor layer and the second electrode, wherein first type adulterates
Semiconductor layer has close to the first side of the first electrode and the second side close to the Second-Type doping semiconductor layer, institute
State the first type doping semiconductor layer include multiple elements at least one, and the multiple element include potassium, rubidium and caesium,
Concentration of at least one of wherein the multiple element in first side is higher than the concentration in the second side.
2. compound solar cell as described in claim 1, which is characterized in that wherein described first type doping semiconductor layer
Including IB races element, Group IIIA element, Group VIA element or combination or IB races element, Group IIB element, IVA races element, VIA
Race's element or combination.
3. compound solar cell as described in claim 1, which is characterized in that wherein described first electrode include molybdenum, silver,
Aluminium, chromium, titanium, nickel, golden or combination.
4. compound solar cell as described in claim 1, which is characterized in that wherein described first type doping semiconductor layer
And the one of which of the Second-Type doping semiconductor layer is p-type doping semiconductor layer, and the first type doped semiconductor
The wherein another one of layer and the Second-Type doping semiconductor layer is n-type doping semiconductor layer.
5. compound solar cell as described in claim 1, which is characterized in that further include substrate, and the first electrode
It is configured between the first type doping semiconductor layer and the substrate.
6. a kind of production method of light absorbing layer, which is characterized in that including：
Precursor layer is formed on substrate, the precursor layer includes multiple nano-particles, and the material of the multiple nano-particle
Material includes Cu oxide, indium oxide and gallium oxide；
Slurry is provided in the precursor layer, wherein the material of the slurry includes alkali metal compound；And
The slurry and the precursor layer are heat-treated.
7. the production method of light absorbing layer as claimed in claim 6, which is characterized in that wherein form the precursor layer in institute
The method stated on substrate includes：
Coating predecessor on the substrate to form the precursor layer.
8. the production method of light absorbing layer as claimed in claim 6, which is characterized in that wherein provide the slurry before described
The method driven in nitride layer includes：
Be coated with by capillary, rotary coating, brushing, blade coating, spray coating or printing coating be coated with the slurry in
In the precursor layer.
9. the production method of light absorbing layer as claimed in claim 6, which is characterized in that wherein described slurry further includes solvent,
And the alkali metal compound is dispersed evenly among the solvent.
10. the production method of light absorbing layer as claimed in claim 9, which is characterized in that wherein described solvent includes water, alcohols
Solvent, esters solvent, ketones solvent, ether solvent, amine solvent, acids solvent, bases solvent or combination.
11. the production method of light absorbing layer as claimed in claim 6, which is characterized in that wherein described alkali metal compound exists
Concentration expressed in percentage by weight in the slurry is fallen in the range of 0.01% to 0.6%.
12. the production method of light absorbing layer as claimed in claim 9, which is characterized in that further include：
The slurry is provided after in the precursor layer, the slurry is dried and is handled so that the solvent volatilizees.
13. the production method of light absorbing layer as claimed in claim 6, which is characterized in that wherein described alkali metal compound packet
At least one of multiple elements is included, and the multiple element includes potassium, rubidium and caesium.
14. the production method of light absorbing layer as claimed in claim 6, which is characterized in that be wherein provided in the precursor layer
On the slurry form film layer, and the thickness of the film layer is fallen in the range of 3 nanometers to 100 nanometers.
15. the production method of light absorbing layer as claimed in claim 13, which is characterized in that wherein to the slurry and described
Precursor layer carries out the heat-treating methods and includes：
The slurry and the precursor layer are placed in form light absorbing layer in gaseous environment, wherein the gaseous environment packet
The gas of Group VIA element is included, and the temperature of the gaseous environment is fallen in the range of 300 degree Celsius to 600 degree Celsius.
16. the production method of light absorbing layer as claimed in claim 15, which is characterized in that wherein described light absorbing layer includes institute
At least one of multiple elements is stated, and at least one of the multiple element is higher than in the concentration close to the substrate
Concentration far from the substrate.
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| US20120061247A1 (en) * | 2010-09-09 | 2012-03-15 | International Business Machines Corporation | Method and Chemistry for Selenium Electrodeposition |
| CN104704617A (en) * | 2012-12-21 | 2015-06-10 | 弗立泽姆公司 | Fabricating thin-film optoelectronic devices with added potassium |
| CN105742412A (en) * | 2016-04-28 | 2016-07-06 | 中国科学院上海微系统与信息技术研究所 | Alkali metal doping method for thin-film solar cell absorption layer |
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| TW201119074A (en) * | 2009-11-18 | 2011-06-01 | Nexpower Technology Corp | Thin film solar cell and manufacturing method thereof |
| TW201300322A (en) * | 2011-06-28 | 2013-01-01 | Shanghai Inst Ceramics | A method for preparing light absorption layer of copper-indium-gallium-sulfur-selenium thin film solar cells |
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| US20120061247A1 (en) * | 2010-09-09 | 2012-03-15 | International Business Machines Corporation | Method and Chemistry for Selenium Electrodeposition |
| CN104704617A (en) * | 2012-12-21 | 2015-06-10 | 弗立泽姆公司 | Fabricating thin-film optoelectronic devices with added potassium |
| CN105742412A (en) * | 2016-04-28 | 2016-07-06 | 中国科学院上海微系统与信息技术研究所 | Alkali metal doping method for thin-film solar cell absorption layer |
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