CN108258005A - A kind of CCD for having quick semiotic function of releasing - Google Patents
A kind of CCD for having quick semiotic function of releasing Download PDFInfo
- Publication number
- CN108258005A CN108258005A CN201810026730.7A CN201810026730A CN108258005A CN 108258005 A CN108258005 A CN 108258005A CN 201810026730 A CN201810026730 A CN 201810026730A CN 108258005 A CN108258005 A CN 108258005A
- Authority
- CN
- China
- Prior art keywords
- quick
- ccd
- releasing
- area
- light shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 229920005591 polysilicon Polymers 0.000 claims abstract description 8
- 238000010992 reflux Methods 0.000 claims abstract description 8
- 239000003870 refractory metal Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000007704 transition Effects 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003571 electronic cigarette Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
Abstract
The invention belongs to technical field of semiconductor device, relate generally to a kind of CCD for having quick semiotic function of releasing, neighbouring on the silicon substrate to be provided with transition range and photosensitive area including silicon substrate, it is characterised in that：Polysilicon TG transfer gate is provided in surface of silicon in the range of the transition range, covered with light shield layer, light shield layer surface deposition has reflux layer on polysilicon TG transfer gate surface, and the reflux layer covers photosensitive area；The light shield layer is made of refractory metal or refractory metal alloy, further include quick release area and horizontal signal channel region, the quick area that releases is set between photosensitive area and horizontal signal channel region, the present invention eliminates row signal using the quick area that releases of CCD settings, realize that CCD has windowing function, CCD transmission and computer amount of image information to be treated are reduced, improves CCD frame frequencies.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of CCD knots for having quick semiotic function of releasing
Structure.
Background technology
Charge coupled device ccd (Charge Coupled Device) is a kind of miniature image sensor, itself has both light
The image being distributed in spatial domain can be converted on time by the functions such as storage, transfer, the conversion of electric conversion function and signal
Between the discrete distribution in domain electric signal.With high sensitivity, spectral response is wide, dynamic range is big, pixel dimension is small, geometric accuracy
The advantages that height, good imaging quality, anti-vibration, radioresistance.
Existing industrial camera generally provides 4：3 resolution window, however in actually detected, usually only use longitudinal resolution
A part for rate, if camera core component CCD has windowing function, then oneself uninterested data can be removed
Part, so as to greatly improve transmission and treatment effeciency.
Invention content
The problem of based on being mentioned in above-mentioned background technology, has quick semiotic function of releasing the present invention provides a kind of
CCD, by the rational area that quickly releases of CCD settings, to promote the windowing of CCD and frame frequency.
The technical solution adopted by the present invention is as follows：
A kind of CCD for having quick semiotic function of releasing, it is neighbouring on the silicon substrate to be provided with transition range including silicon substrate
And photosensitive area, it is characterised in that：Polysilicon TG transfer gate is provided in surface of silicon in the range of the transition range, polysilicon turns
Grid surface is moved covered with light shield layer, light shield layer surface deposition has reflux layer, and the reflux layer covers photosensitive area；The light shield layer
It is made of refractory metal or refractory metal alloy, further includes quick release area and horizontal signal channel region, it is described quickly to let out
Area is put to be set between photosensitive area and horizontal signal channel region.
Based on the above technical solution, the present invention can also be improved as follows.
Further：It is described it is quick release area by leakage of quickly releasing, grid of quickly releasing, vertical transfer signal channel A, vertical turn
Shifting signal channel B is formed.
Further：The quick grid of releasing are divided into A, B sections of realization Discrete controls, and are circularly set in the same manner.
Further：Quick release grid and the quick leakage setting symmetrical above and below of releasing.
Further：The photosensitive area is twoth area of A, B by vertical TG transfer gate subregion, and with quick distinguishable region group of releasing
It closes and realizes device windowing function.
Quick release area of the present invention setting with special construction is used to remove row signal, and the row signal being eliminated does not need to
Source is transferred to by horizontal CCD to export with amplifier so that can define in image sensor array size range interested
Window area, only the image information in these windows is read so that device has a windowing function, improves device frame
Frequently.
Beneficial effects of the present invention：Row signal is eliminated using the quick area that releases of CCD settings, realizes that CCD has windowing work(
Can, CCD transmission and computer amount of image information to be treated are reduced, improves CCD frame frequencies.
Description of the drawings
The present invention can be further illustrated by the nonlimiting examples that attached drawing provides；
Fig. 1 is a kind of structure diagram for the CCD for having quick semiotic function of releasing of the present invention.
Specific embodiment
In order to make those skilled in the art that the present invention may be better understood, with reference to the accompanying drawings and examples to this hair
Bright technical solution further illustrates.
As shown in Figure 1, a kind of CCD for having quick semiotic function of releasing, neighbouring on the silicon substrate to set including silicon substrate
It is equipped with transition range and photosensitive area 6, it is characterised in that：Polysilicon transfer is provided in surface of silicon in the range of the transition range
Grid, covered with light shield layer, light shield layer surface deposition has reflux layer on polysilicon TG transfer gate surface, and the reflux layer covers photosensitive area
Lid；The light shield layer is made of refractory metal or refractory metal alloy, is further included and quick is released area 2 and horizontal signal leads to
Road area 3, the quick area that releases are set between photosensitive area 6 and horizontal signal channel region 3.
The quick area that releases is by leakage 4 of quickly releasing, quick grid 5 of releasing, vertical transfer signal channel A, vertical transfer letter
Number channel B is formed.
The quick grid 5 of releasing divide realizes Discrete controls, and be circularly set in the same manner for A, B sections.
Quick release grid 5 and quick 4 settings symmetrical above and below of leakage of releasing.
The photosensitive area 6 is twoth area of A, B by vertical TG transfer gate subregion, and is combined in fact with quick 2 subregion of area of releasing
Existing device windowing function.
Quick release area 2 of the present invention setting with special construction is used to remove row signal, and the row signal being eliminated is not required to
Source is transferred to by horizontal CCD 1 to export with amplifier so that it is emerging that sense can be defined in image sensor array size range
The window area of interest, only reads the image information in these windows so that device has windowing function, improves device frame
Frequently.
Electronic cigarette generating means provided by the invention is described in detail above.The explanation of specific embodiment is only used
In facilitating the understanding of the method and its core concept of the invention.It should be pointed out that for those skilled in the art,
Without departing from the principle of the present invention, can also to the present invention some improvement and modification can also be carried out, these improvement and modification
It falls into the protection domain of the claims in the present invention.
Claims (5)
1. a kind of CCD for having quick semiotic function of releasing, including silicon substrate, on the silicon substrate it is neighbouring be provided with transition range and
Photosensitive area, it is characterised in that：Polysilicon TG transfer gate, polysilicon transfer are provided in surface of silicon in the range of the transition range
Covered with light shield layer, light shield layer surface deposition has reflux layer on grid surface, and the reflux layer covers photosensitive area；The light shield layer is adopted
It is made of refractory metal or refractory metal alloy, it is characterised in that：Quick release area and horizontal signal channel region are further included,
The quick area that releases is set between photosensitive area and horizontal signal channel region.
2. a kind of CCD for having quick semiotic function of releasing according to claim 1, it is characterised in that：It is described quickly to let out
Area is put to be made of leakage of quickly releasing, grid of quickly releasing, vertical transfer signal channel A, vertical transfer signal channel B.
3. a kind of CCD for having quick semiotic function of releasing according to claim 2, it is characterised in that：It is described quickly to let out
It puts grid and is divided into A, B sections of realization Discrete controls, and be circularly set in the same manner.
4. a kind of CCD for having quick semiotic function of releasing according to claim 3, it is characterised in that：It is described quickly to let out
Put grid and quick leakage setting symmetrical above and below of releasing.
5. a kind of CCD for having quick semiotic function of releasing according to claim 4, it is characterised in that：The photosensitive area
It is twoth area of A, B by vertical TG transfer gate subregion, and is combined with quick distinguishable region of releasing and realize device windowing function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810026730.7A CN108258005B (en) | 2018-01-11 | 2018-01-11 | CCD with rapid signal release function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810026730.7A CN108258005B (en) | 2018-01-11 | 2018-01-11 | CCD with rapid signal release function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108258005A true CN108258005A (en) | 2018-07-06 |
| CN108258005B CN108258005B (en) | 2021-11-16 |
Family
ID=62726300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810026730.7A Active CN108258005B (en) | 2018-01-11 | 2018-01-11 | CCD with rapid signal release function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108258005B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6507056B1 (en) * | 2000-03-22 | 2003-01-14 | Eastman Kodak Company | Fast line dump structure for solid state image sensor |
| CN1819253A (en) * | 2005-01-28 | 2006-08-16 | 松下电器产业株式会社 | Solid-state imaging device and manufacturing method for the same |
| CN101729797A (en) * | 2008-10-17 | 2010-06-09 | 索尼株式会社 | Solid-state imaging apparatus, camera, and method of manufacturing solid-state imaging apparatus |
| CN104766873A (en) * | 2015-04-14 | 2015-07-08 | 中国电子科技集团公司第四十四研究所 | Internal line transferring CCD structure and manufacturing method thereof |
-
2018
- 2018-01-11 CN CN201810026730.7A patent/CN108258005B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6507056B1 (en) * | 2000-03-22 | 2003-01-14 | Eastman Kodak Company | Fast line dump structure for solid state image sensor |
| CN1819253A (en) * | 2005-01-28 | 2006-08-16 | 松下电器产业株式会社 | Solid-state imaging device and manufacturing method for the same |
| CN101729797A (en) * | 2008-10-17 | 2010-06-09 | 索尼株式会社 | Solid-state imaging apparatus, camera, and method of manufacturing solid-state imaging apparatus |
| CN104766873A (en) * | 2015-04-14 | 2015-07-08 | 中国电子科技集团公司第四十四研究所 | Internal line transferring CCD structure and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| SHEN WANG等: "A 47 Million Pixel High-Performance Interline CCD Image Sensor", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108258005B (en) | 2021-11-16 |
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