CN106454159A - High-dynamic EMCCD (Electronic Multiplying CCD) image sensor - Google Patents
High-dynamic EMCCD (Electronic Multiplying CCD) image sensor Download PDFInfo
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- CN106454159A CN106454159A CN201610919621.9A CN201610919621A CN106454159A CN 106454159 A CN106454159 A CN 106454159A CN 201610919621 A CN201610919621 A CN 201610919621A CN 106454159 A CN106454159 A CN 106454159A
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- emccd
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
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Abstract
The invention discloses a high-dynamic EMCCD (Electronic Multiplying CCD) image sensor, which is characterized in that a charge distributor is arranged between a horizontal shift register and a gain register of an EMCCD, an output end of the charge distributor adopts double-channel output, one is a common channel formed by a common charge register, and the other is a high-gain channel formed by the gain register; the two channels output simultaneously, synthesis is respectively performed corresponding to high-order and low-order AD sampling so as to realize high-dynamic imaging on the same frame. The high-dynamic EMCCD image sensor does not change a CCD pixel structure, and only performs structure improvement on a charge gain transfer channel; the structure of double-channel output is adopted, presentation for details of a bright part and a dark part is realized at the same time, and the high-gain channel can realize gain control so as to change a detail recognition effect of the dark part; the imaging dynamic range can be adjusted according to the environment, and the applicability is high; and the high-dynamic EMCCD image sensor is compatible with the existing EMCCD technology, low in cost and high in practicability.
Description
Technical field
The present invention relates to a kind of high dynamic EMCCD imageing sensor, is imaged under achievable EMCCD high dynamic scene.
Background technology
The dynamic range of CCD determines which to the Scenery Imaging degree of containing in scene domain, and dynamic range is bigger, to scene
Light and shade details to assume ability stronger.Therefore, to compare conventional detector more in scene because obtaining for high dynamic imaging detector
Information, have a wide range of applications.
Traditional ccd video camera is only sampled once to whole image during collection piece image, therefore will necessarily be gone out
The under exposed phenomenon in now excessive or dark to the regional exposure for becoming clear in whole image region.This is one since CCD shooting
Machine is by just long-standing defect always since invention.
When scene dynamics are larger, imageing sensor cannot take into account the subject of different brightness.
The method of extension ccd video camera dynamic range mainly has the compacting of high light signal, output signal gamma-corrected side at present
Method, logarithmic compression amplification method, single-frame imagess sampling method, single-frame imagess multiple sampling method etc. twice.Total objective is intended to
See the image of different light and shade parts clearly, be all finally to synthesize an image.
EMCCD（Electronic Multiplying CCD, electron multiplying charge coupled apparatus）It is a kind of special
CCD, which can work by day as CCD, be provided simultaneously with the ability of working at night.From EMCCD chip structure, EMCCD exists
Doubling register is increased on the basis of common CCD, step by step amplification of the photogenerated charge by doubling register, overcome CCD to read
Noise, the weak target so as to realize at night is detected.
Although EMCCD can be general round the clock, its dynamic range is on the contrary because in high-gain, and has reduced.From CCD with
Dynamic range schematic diagram Fig. 1 of EMCCD is obtained：
The dynamic range of common CCD is L3～L4, is suitable for the higher environment of brightness,（Its output linear group slope is less）,
And EMCCD can be operated in high gain mode, realize to the imaging under dark situation（Its output linear group slope is larger）, but because
Gain is higher, and in Same Scene, brighter part is easy to saturation, reduces the dynamic range to bright part on the contrary.Comprehensively see, instead
And cause the reduction of EMCCD operating dynamic range.
High dynamic imaging will be realized in CCD or CMOS camera, and general technical method has multiexposure, multiple exposure synthesis, multiple senses
The modes such as optical element synthesis, high light decay.
In existing patent, do not relate to lift EMCCD dynamic range.But from terms of classification, EMCCD belongs to ccd image biography
Sensor one kind, in current publication, the representational high dynamic range image sensor Patents of comparison have：
Application No. CN201310204570.8（Sibike Microelectronic Tech Co., Ltd., Beijing）Patent：By a kind of light-induced variable
Color material is integrated between lenticule and photosensitive unit, for decompositing atrament decay high light in the presence of light, so as to keep away
Exempt from high light scene saturation, the dynamic range of image can be improved, but chemical substance is inadequate to the sensitive linearity of light, and cannot be qualitative
High light attenuation quotient is obtained, therefore scene light intensity and in final image, it is impossible to distinguish the institute of photosensitive unit of same output intensity
The corresponding high light scene being attenuated or normal scene.
Application No. CN201310016833.2（Sibike Microelectronic Tech Co., Ltd., Beijing）Patent：Using many
Individual photo-sensitive cell is to scene sample, and the exposure saturation time difference that each photo-sensitive cell is adopted, have compressed the high exposure of sensor
Photoelectric respone curve during amount, reduces the sensitivity of high light exposure pixel, therefore improves the dynamic range of imageing sensor.
Because comparing conventional imageing sensor, single photo-sensitive cell became multiple photo-sensitive cells correspondingly with scene originally, to light
Quick meta structure design and processes processing request is higher.
Application No. CN201210269110.9（American apple company）Patent：Using digital image sensor control
Imageing sensor, exposes the image of scene using multiple repairing weld difference and is synthesized, to realize the image output of high dynamic.Should
Technology can reduce image sensor design difficulty, but increase the calculating of successive image sensor, and since it is desired that multiple repairing weld, disappears
The time of consumption is more, is restricted under the scene higher to output image rate requirement.
Application No. CN201210175223.2（Shanghai Zhongke Institute for Advanced Study）Patent：Disclose a kind of high dynamic
Range image sensor and its manufacture method, which utilizes vacant area in metal wiring layer, forms MIM capacitor, and with floating
Diffusion region parallel connection, expands the trap capacity of floating diffusion region, improves imageing sensor photogenerated charge storage capacity, so as to carry
The high upper limit of dynamic range.At the same time, due to not increasing the area of floating diffusion region itself, it is to avoid dark current noise
Increase.It is to improve dynamic range by improving photosensitive unit's memory capacity on the technological essence, the dynamic range to specular
Lifting is helpful, but half-light area cannot be lifted.
Application No. CN201210035539.1（Shanghai Zhongke Institute for Advanced Study）Patent：Using in each pixel
Multiple sensor devices and transfering transistor are set, in each integration period respectively by scheduled timing successively open each sensor devices with
Each sensor devices are successively read out by the connection between floating diffusion region, during certain sensor devices is read, other
Sensor devices still integration, parallel integration can reduce operation total time, can be lifted under HDR mode of operation
The operating rate of imageing sensor.The lenticular structure of two-layer is additionally used, each sensor devices in same pixel can be made
The optical signal of sampling same point, improves accuracy of the imageing sensor to optical signal detecting.The technology is thought with above-mentioned Beijing
There is part of coming round than section's patent CN201310016833.2, be required for, using multiple photo-sensitive cells, designing photosensitive meta structure
Higher with technique processing request.
Application No. CN201110298506.1（Hongli Semiconductor Manufacture Co Ltd, Shanghai）Patent：Disclose one kind
Designed using the high dynamic CMOS image sensor structure of 4T structure, which is passed through time series pulse signals and is mated with extraneous light intensity, with
The junction capacity for making floating diffusion region is the variable capacitance with the change of extraneous light intensity.Reached with this and float with extraneous light intensity adjustment
The purpose of the junction capacity of diffusion region is put, to realize high dynamic cmos image sensor.Its method is more novel, but in patent not
Inform and extraneous light intensity how is perceived, and realize method or the design that time series pulse signals are mated with extraneous light intensity.
Application No. CN200980121401.X（New York, United States Kodak）Patent：A kind of disclosed high dynamic figure
As sensor, which includes multiple pixels, and each pixel includes:First photosensitive region, which collects electric charge and has in response to light
First sensitivity;Second photosensitive region, which collects electric charge and with less than described in first photosensitive region in response to light
Second sensitivity of sensitivity, so as to by the photosensitive unit of multiple varying sensitivities realize high dynamic imaging, it is clear that its with upper
State consistent using the know-why of Multi sensor lifting dynamic range.
Content of the invention
In order to overcome the shortcoming of above-mentioned prior art, object of the present invention is to provide increasing on EMCCD device architecture
Plus charge distributor and twin-channel gain register chain method for designing, supernumerary structure need not be increased（Or device）, you can realize
The high dynamic imaging of EMCCD, while simple with implementation, without the need for multiple repairing weld, the advantages of taking into account light and shade environment and use, with
When there is low cost, compatible existing process, being especially suitable for applying is needing HDR environmental applications.
For solving above-mentioned technical problem, the present invention provides a kind of high dynamic EMCCD imageing sensor, it is characterized in that,
One charge distributor is set between the horizontal shifting register of EMCCD and high-gain depositor, and charge distributor outfan is adopted
The dual pathways export, a road is the Common passageway for being formed by common electric charge depositor, another road be by the high-gain depositor shape
The high-gain passage for becoming；In two paths while after exporting, correspondence carries out the AD sampling synthesis of high-order and low level respectively, realizes
Same vertical frame dimension dynamic imaging.
Common passageway carries out electric charge amplification using common CCD output and amplifier.
High-gain passage carries out electric charge amplification using the output of original EMCCD high-gain passage and amplifier.
The charge distributor adopts automatic overflowing structure, shifts the charge packet for coming in electric charge from horizontal shifting register
High-gain channel charge caching potential well and Common passageway electric charge caching potential well is assigned in allotter.
During charge packet distribution, high-gain channel charge caching potential well is initially entered；When amount of charge is beyond potential well capacity,
Overflow potential well and enter Common passageway electric charge caching potential well；
The electric charge of high-gain channel charge caching potential well is transferred to high-gain depositor and is exported；Common passageway electric charge is cached
The electric charge of potential well is transferred to common electric charge depositor and is exported.
The potential well capacity of high-gain electric charge caching potential well is device minimal noise magnitude.
The potential well capacity of Common passageway electric charge caching potential well is 104～105Individual electronics.
The distribution of charge packet is in Vhigh、Vdc、VnormalAutomatically distributed under the control of gate electrode, wherein VhighControl is high
Gain channel electric charge caches potential well, VdcControl electric charge overflows threshold, VnormalControl Common passageway electric charge caching potential well；
By adjusting Vhigh、Vdc、VnormalElectrode voltage, obtains different spilling thresholds and potential well capacity.
The beneficial effect reached by the present invention：
1st, do not change CCD pixel structure, on charge gain transfering channel, only carry out structure improvement；
2nd, dual pathways export structure is adopted, while realize assuming highlights and dark portion details, and high-gain passage can
Realize gain control and change dark portion details recognition effect；
3rd, imaging dynamic range can be adjusted according to environment（The adjustment control-grid voltage Vhigh of charge distributor, Vdc,
Vnormal and multiplication channel gain）, strong applicability；
4th, device and existing EMCCD process compatible, low cost, practical.
Description of the drawings
Fig. 1 CCD, EMCCD operating dynamic range schematic diagram；
Fig. 2 EMCCD structure chart；
Fig. 3 EMCCD is operated in common CCD pattern and the dynamic range under high gain mode；
Fig. 4 high dynamic EMCCD structural design drawing；
Fig. 5 high dynamic realizes structured flowchart；
Automatic assigning process figure when Fig. 6 charge distributor is less and more in electric charge；
Fig. 7 high dynamic EMCCD operating dynamic range is illustrated.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.Following examples are only used for the present invention is clearly described
Technical scheme, and can not be limited the scope of the invention with this.
1. ultimate principle
The present invention is based in original EMCCD structure and is designed.In original EMCCD horizontal shifting register and gain register
Between increase charge distributor, charge distributor can according to amount of charge number distributed automatically, defeated in charge distributor
Go out end to export using the dual pathways, a road is amplified using common CCD output and electric charge, and another road adopts original EMCCD high-gain
Passage output and amplification.When for dark part imaging in Same Scene, electric charge can enter high-gain passage, so as to realize
Dark portion details is presented；And to, during brighter part imaging, most electric charge can enter Common passageway, without by gain
Saturation, therefore can retain highlights details.In two passages while after exporting, carrying out the AD sampling synthesis of high-order and low level respectively,
So as to realize in same vertical frame dimension dynamic imaging.
Contrast only has the EMCCD of high-gain passage, to becoming while having the dark portion scene larger with highlights, dynamic range
During picture, high dynamic EMCCD distributes electric charge imaging automatically because possessing the dual pathways, can realize to scene height details in a frame in
Distinguish, and common EMCCD can only be distinguished to the dark details in part, and common CCD can only be made a distinction to brighter part, therefore
High dynamic EMCCD has not only been expanded and dark portion details has been presented, and remains highlights details is presented, in same frame figure
High dynamic imaging is achieved in picture.
2. design
2.1 EMCCD Range Analysis
The structural representation of common EMCCD is as shown in Figure 2.Figure it is seen that EMCCD mainly have photosensitive area, memorizer,
Horizontal shifting register, gain register, amplifier etc. constitute, and final output signal is AD converted（Generally 12bits）.
EMCCD now can be by adjusting the gain coefficient of multiplication passage so that charge signal amplification 1～
2000 times adjustable（For ensureing functional reliability, conventional multiple is at 1～1000 times）.When gain factor is 1, EMCCD works
In common CCD pattern, which has no significant difference with common CCD, when gain factor exceedes higher value（100 times of representative value）When,
It is believed that EMCCD is operated in high gain mode.
According to above-mentioned analysis, the dynamic range during work of EMCCD illustrates such as Fig. 3.EMCCD because be subject to material, device and
Circuit inherent shortcoming is limited, and EMCCD is limited by noise gate to the identification of output signal, therefore from Fig. 3, it can be seen that
Under CCD pattern, the light intensity dynamic range that EMCCD can work is L3～L4（That is " dynamic range 2 " of in figure）, in high gain mode
Under, the light intensity dynamic range that EMCCD can work is L1～L2（That is " dynamic range 1 " of in figure）.Obviously, with the increasing of gain
Plus, although EMCCD can be expanded in the areas imaging compared with dark situation（L3→L1）, but at the same time, to the part compared with bright ring border
It is more prone to saturation (L4 → L2）.
From Fig. 3 and above-mentioned analysis, it can be seen that EMCCD is when the identification to dark portion details is expanded, and dynamic range reduces on the contrary.
2.2 dynamic EMCCD general structure design
High dynamic EMCCD structure design such as Fig. 4.From in terms of Fig. 4, high dynamic EMCCD original EMCCD horizontal shifting register with
Increase charge distributor and dual pathways output between gain register（Common passageway and high-gain passage）, charge distributor energy root
According to amount of charge number distributed automatically, charge distributor outfan using the dual pathways export, a road adopts common CCD
Output and amplifier carry out electric charge amplification, and another road carries out electric charge using the output of original EMCCD high-gain passage and amplifier
Amplify.
When for dark part imaging in Same Scene, electric charge can enter high-gain passage, so as to realize to dark portion
The presenting of details；And to, during brighter part imaging, most electric charge can enter Common passageway, without by gain saturatiuon,
Therefore highlights details can be retained.In two passages while after exporting, carrying out the AD sampling synthesis of high-order and low level respectively, so as to reality
Same vertical frame dimension dynamic imaging now, as shown in Figure 5.
2.3 charge distributors are designed
Charge distributor shifts the charge packet for coming in charge distributing using automatic overflowing structure design from horizontal shifting register
Device can be assigned to high-gain channel charge caching potential well and Common passageway electric charge caching potential well.
As shown in fig. 6, charge packet initially enters high-gain channel charge caching potential well, high-gain electric charge caches the allusion quotation of potential well
Type potential well capacity should be device minimal noise magnitude（The reading noise of such as normal CCD is per 100 electronics of frame, and potential well capacity can be
100 electronics）.When the more capacity beyond potential well of amount of charge, potential well can be overflowed and enter Common passageway electric charge caching potential well（Potential well
Capacity is larger, typically may be configured as 104～105Individual electronics）.
The electric charge of high-gain channel charge caching potential well can be transferred to gain register chain and be amplified, with to dark
Scenery details is presented.The electric charge of Common passageway electric charge caching potential well can be transferred to common electric charge depositor passage and carry out
Output.
The distribution of charge packet is in Vhigh、Vdc、VnormalAutomatically distributed under the control of gate electrode, wherein VhighControl is high
Gain channel electric charge caches potential well, VdcControl electric charge overflows threshold, VnormalControl Common passageway electric charge caching potential well.Wherein lead to
Overregulate Vhigh、Vdc、VnormalElectrode voltage, is obtained different spilling thresholds and potential well capacity, to meet different application, than
More typical value is Vhigh（12V）、Vdc（4V）、Vnormal（16V）.
2.4 high dynamic EMCCD operating dynamic range
The CCD of the contrast only EMCCD of high-gain passage and only Common passageway, to while with dark portion and highlights, dynamic
During the larger scene imaging of scope, common EMCCD can only be distinguished to the dark details in part, and common CCD can only be to brighter portion
Divide and make a distinction, high dynamic EMCCD distributes electric charge imaging automatically because possessing the dual pathways, can realize to scene height in a frame in
The differentiation of details, therefore high dynamic EMCCD not only expanded and dark portion details be presented, and remain to highlights details
Presenting, high dynamic imaging being achieved in same two field picture, its operating dynamic range is as shown in fig. 7, it will be seen in fig. 7 that set
In respect of charge distributor and the dual pathways（Common passageway and gain channel）High dynamic EMCCD dynamic range contrast Fig. 3, can see
Go out, now EMCCD dynamic range is widenable to L1～L4, it is achieved thereby that high dynamic imaging.
3. technical characterstic
This high dynamic EMCCD imageing sensor feature：
1st, do not change CCD pixel structure, on charge gain transfering channel, only carry out structure improvement；
2nd, dual pathways export structure is adopted, while realize assuming highlights and dark portion details, and high-gain passage can
Realize gain control and change dark portion details recognition effect；
3rd, imaging dynamic range can be adjusted according to environment（The control-grid voltage V of adjustment charge distributorhigh、Vdc、Vnormal
With multiplication channel gain）, strong applicability；
4th, device and existing EMCCD process compatible, low cost, practical.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, on the premise of without departing from the technology of the present invention principle, some improvement can also be made and deformed, these improve and deform
Also protection scope of the present invention should be regarded as.
Claims (8)
1. a kind of high dynamic EMCCD imageing sensor, is characterized in that, in horizontal shifting register and the gain register of EMCCD
Between a charge distributor is set, charge distributor outfan using the dual pathways export, a road be by common electric charge depositor shape
The Common passageway for becoming, another road is the high-gain passage for being formed by the gain register；In two paths while after exporting, dividing
The AD sampling synthesis of high-order and low level Dui Ying not be carried out, is realized in same vertical frame dimension dynamic imaging.
2. high dynamic EMCCD imageing sensor according to claim 1, is characterized in that, Common passageway is defeated using common CCD
Going out carries out electric charge amplification with amplifier.
3. high dynamic EMCCD imageing sensor according to claim 1, is characterized in that, high-gain passage is using original
The output of EMCCD high-gain passage and amplifier carry out electric charge amplification.
4. high dynamic EMCCD imageing sensor according to claim 1, is characterized in that, the charge distributor is using certainly
Dynamic overflowing structure, the charge packet for coming from horizontal shifting register transfer is assigned to high-gain passage electricity in charge distributor
Lotus caching potential well and Common passageway electric charge caching potential well.
5. high dynamic EMCCD imageing sensor according to claim 4, is characterized in that, during charge packet distribution, initially enter
High-gain channel charge caches potential well；When amount of charge is beyond potential well capacity, overflows potential well and enter Common passageway electric charge caching
Potential well；
The electric charge of high-gain channel charge caching potential well is transferred to high-gain depositor and is exported；Common passageway electric charge is cached
The electric charge of potential well is transferred to common electric charge depositor and is exported.
6. the high dynamic EMCCD imageing sensor according to claim 4 or 5, is characterized in that, high-gain electric charge caches potential well
Potential well capacity be device minimal noise magnitude.
7. the high dynamic EMCCD imageing sensor according to claim 4 or 5, is characterized in that, Common passageway electric charge caches gesture
The potential well capacity of trap is 104～105Individual electronics.
8. high dynamic EMCCD imageing sensor according to claim 5, is characterized in that, the distribution of charge packet is in Vhigh、
Vdc、VnormalAutomatically distributed under the control of gate electrode, wherein VhighControl high-gain channel charge caching potential well, VdcControl
Electric charge overflows threshold, VnormalControl Common passageway electric charge caching potential well；
By adjusting Vhigh、Vdc、VnormalElectrode voltage, obtains different spilling thresholds and potential well capacity.
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| CN110703065A (en) * | 2019-08-27 | 2020-01-17 | 华东光电集成器件研究所 | EMCCD developments ageing monitored control system |
| CN111147775A (en) * | 2020-01-03 | 2020-05-12 | 中国电子科技集团公司第四十四研究所 | Single-chip mixed type CCD structure |
| CN111586310A (en) * | 2020-04-30 | 2020-08-25 | 中国科学院西安光学精密机械研究所 | Real-time high-dynamic imaging method and imaging system |
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Application publication date: 20170222 |