CN104766873A - Internal line transferring CCD structure and manufacturing method thereof - Google Patents
Internal line transferring CCD structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN104766873A CN104766873A CN201510174103.4A CN201510174103A CN104766873A CN 104766873 A CN104766873 A CN 104766873A CN 201510174103 A CN201510174103 A CN 201510174103A CN 104766873 A CN104766873 A CN 104766873A
- Authority
- CN
- China
- Prior art keywords
- light shield
- polysilicon
- shield layer
- refractory metal
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
An internal line transferring CCD structure comprises a silicon substrate, wherein a transferring area and a photosensitive area are adjacently arranged on the silicon substrate. The internal line transferring CCD structure is characterized in that a polycrystalline silicon transferring grid is arranged on the surface of the silicon substrate within the range of the transferring area and covered with a light shading layer, a backflow layer deposits on the surface of the light shading layer and covers the photosensitive area, and the light shading layer is made of refractory metal or refractory metal alloy. The internal line transferring CCD structure has the advantages that high-melting metal is used for replacing aluminum, the light shading layer can be directly formed on the polycrystalline silicon transferring grid, and the light leaking rate of elements is reduced.
Description
Technical field
The present invention relates to a kind of charge coupled device manufacturing technology, particularly relate to a kind of interior lines transfer CCD structure and preparation method thereof.
Background technology
Interior lines transfer CCD is the main kind of of CCD, and its picture element unit divides by function can be divided into photosensitive area and transition range two parts, and photosensitive area produces electronics under visible light illumination, and electronics is transferred to device periphery by transition range and exports.The mode of operation of interior lines transfer CCD requires that the region on device beyond photosensitive area must have light shield layer to cover, to avoid photosensitive area with exterior domain because of the spurious signal of photosensitive generation and photosensitive area signal generation crosstalk, reduction CCD image quality.
In prior art, the typical structure of interior lines transfer CCD as shown in Figure 1, as seen from the figure, light shield layer is positioned at above reflux layer, and why prior art adopts the reason of this structure to be: based on conventional design, in prior art, the general aluminium film that adopts forms light shield layer, and reflux layer generally adopts BPSG boron-phosphorosilicate glass, known based on existing theory, the fusing point of metallic aluminium is far below the technological temperature of reflux layer depositing technics, therefore first can only carry out reflux layer deposit, then make light shield layer, Problems existing is: because reflux layer is present between light shield layer and polysilicon TG transfer gate, polysilicon TG transfer gate cannot be blocked by light shield layer that reflux layer is produced completely, when visible ray is injected above device, some light obliquely will to be irradiated in the exterior lateral area of photosensitive area and to form light leak through polysilicon TG transfer gate, thus cause cross-interference issue, and along with the increase of reflux layer thickness, light leak rate is also more serious, in addition, except leakage problem, adding man-hour, also there is the technology difficulty caused because device surface shoulder height difference is large large, easily occur that metal interlevel leaks electricity between light shield layer and lead-in wire, the problem of short circuit, cause device yield lower.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of interior lines transfer CCD structure, comprise silicon substrate, on described silicon substrate, vicinity is provided with transition range and photosensitive area, its innovation is: the surface of silicon within the scope of described transition range is provided with polysilicon TG transfer gate, polysilicon TG transfer gate surface coverage has light shield layer, and light shield layer surface deposition has reflux layer, and photosensitive area covers by described reflux layer; Described light shield layer adopts refractory metal or refractory metal alloy to make.
Principle of the present invention is: make light shield layer with metallic aluminium, although material cost and process costs are all relatively low, but because the operational characteristic of its structure by metallic aluminium affects, light shield layer is made after can only first making reflux layer, device light leak rate is caused to remain high, time serious, light leak rate can, up to more than 15%, affect very large on device performance, consider from the angle improving device performance, inventor thinks, if directly light shield layer to be made in polysilicon TG transfer gate surface, will from solving leakage problem to a great extent, so inventors performed a large amount of experimental explorations, and finally propose the solution of the present invention, in the present invention program, have employed refractory metal or refractory metal alloy to make light shield layer, basic general knowledge based on materialogy field and this area is known, the melting temperature of refractory metal or refractory metal alloy is very high, mostly higher than the technological temperature of reflux layer depositing technics, this just makes light shield layer making can make prior to reflux layer, thus make light shield layer directly be deposited on polysilicon TG transfer gate surface, good covering is formed to polysilicon TG transfer gate, improve the problem that device light leak rate is high, known based on the basic general knowledge in this area, the effect of reflux layer is for improving device surface evenness, and have nothing to do with device function, therefore reflux layer present position does not affect device performance, in addition, after adopting the present invention program, reflux layer can well avoid the electric leakage between light shield layer and metal lead wire, short circuit problem in being covered by light shield layer.
Preferably, described refractory metal adopts Titanium; Described refractory metal alloy adopts tungsten silicide.
Preferably, described light shield layer thickness is 200 ~ 1000nm.
Preferably, described polysilicon TG transfer gate adopts secondary polysilicon process or three polysilicon process to make.
Based on aforementioned schemes, the invention allows for a kind of interior lines transfer CCD manufacture method, its innovation is: following steps for manufacturing interior lines transfer CCD:1) silicon substrate is provided; 2) silicon substrate makes photosensitive area and transition range; 3) polysilicon TG transfer gate is made on a silicon substrate; 4) at polysilicon TG transfer gate surface deposition light shield layer; 5) at device surface deposit reflux layer, light shield layer and photosensitive area all cover by described reflux layer; 6) metal lead wire is made; Wherein, described light shield layer adopts refractory metal or refractory metal alloy to make.In this manufacture method, the technique adopted is the common processes of semicon industry in prior art, it is processing step and light shield layer material from the different of prior art, specifically, make reflux layer after first making light shield layer in method of the present invention, and be after first making reflux layer, make light shield layer in prior art, in addition, adopt refractory metal or refractory metal alloy to make light shield layer in method of the present invention, and in prior art, adopt metallic aluminium to make light shield layer.
Preferably, described light shield layer thickness is 200 ~ 1000nm.
Preferably, described polysilicon TG transfer gate adopts secondary polysilicon process or three polysilicon process to make.
Preferably, described refractory metal adopts Titanium; Described refractory metal alloy adopts tungsten silicide.
Advantageous Effects of the present invention is: propose a kind of new interior lines transfer CCD structure and manufacture method, by adopting high melting point metal materials to replace aluminium, light shield layer can be directly formed in polysilicon TG transfer gate, reduces device light leak rate.
Accompanying drawing explanation
The typical schematic construction of Fig. 1, existing interior lines transfer CCD;
Fig. 2, structural representation of the present invention;
In figure each mark corresponding to title be respectively: silicon substrate 1, polysilicon TG transfer gate 2, light shield layer 3, reflux layer 4, transition range A, photosensitive area B, visible ray incident direction C.
Embodiment
A kind of interior lines transfer CCD structure, comprise silicon substrate 1, on described silicon substrate 1, vicinity is provided with transition range A and photosensitive area B, its innovation is: the silicon substrate 1 within the scope of described transition range A is provided with polysilicon TG transfer gate 2 on the surface, polysilicon TG transfer gate 2 surface coverage has light shield layer 3, light shield layer 3 surface deposition has reflux layer 4, and photosensitive area B covers by described reflux layer 4; Described light shield layer 3 adopts refractory metal or refractory metal alloy to make.
Further, described refractory metal adopts Titanium; Described refractory metal alloy adopts tungsten silicide.
Further, described light shield layer 3 thickness is 200 ~ 1000nm.
Further, described polysilicon TG transfer gate 2 adopts secondary polysilicon process or three polysilicon process to make.
A kind of interior lines transfer CCD manufacture method, its innovation is: following steps for manufacturing interior lines transfer CCD:1) silicon substrate is provided; 2) silicon substrate makes photosensitive area B and transition range A; 3) polysilicon TG transfer gate 2 is made on a silicon substrate; 4) at polysilicon TG transfer gate 2 surface deposition light shield layer 3; 5) at device surface deposit reflux layer 4, light shield layer 3 and photosensitive area B all cover by described reflux layer 4; 6) metal lead wire is made; Wherein, described light shield layer 3 adopts refractory metal or refractory metal alloy to make.
Further, described light shield layer 3 thickness is 200 ~ 1000nm.
Further, described polysilicon TG transfer gate 2 adopts secondary polysilicon process or three polysilicon process to make.
Further, described refractory metal adopts Titanium; Described refractory metal alloy adopts tungsten silicide.
Through verification experimental verification, after adopting the present invention program, product light leak rate can be reduced to about 2%.
Claims (8)
1. an interior lines transfer CCD structure, comprise silicon substrate (1), the upper vicinity of described silicon substrate (1) is provided with transition range (A) and photosensitive area (B), it is characterized in that: the silicon substrate (1) in described transition range (A) scope is provided with polysilicon TG transfer gate (2) on the surface, polysilicon TG transfer gate (2) surface coverage has light shield layer (3), light shield layer (3) surface deposition has reflux layer (4), and photosensitive area (B) covers by described reflux layer (4); Described light shield layer (3) adopts refractory metal or refractory metal alloy to make.
2. interior lines transfer CCD structure according to claim 1, is characterized in that: described refractory metal adopts Titanium; Described refractory metal alloy adopts tungsten silicide.
3. interior lines transfer CCD structure according to claim 1, is characterized in that: described light shield layer (3) thickness is 200 ~ 1000nm.
4. interior lines transfer CCD structure according to claim 1, is characterized in that: described polysilicon TG transfer gate (2) adopts secondary polysilicon process or three polysilicon process to make.
5. an interior lines transfer CCD manufacture method, is characterized in that: following steps for manufacturing interior lines transfer CCD:1) silicon substrate is provided; 2) photosensitive area (B) and transition range (A) is made on a silicon substrate; 3) polysilicon TG transfer gate (2) is made on a silicon substrate; 4) at polysilicon TG transfer gate (2) surface deposition light shield layer (3); 5) at device surface deposit reflux layer (4), light shield layer (3) and photosensitive area (B) all cover by described reflux layer (4); 6) metal lead wire is made; Wherein, described light shield layer (3) adopts refractory metal or refractory metal alloy to make.
6. interior lines transfer CCD manufacture method according to claim 5, is characterized in that: described light shield layer (3) thickness is 200 ~ 1000nm.
7. interior lines transfer CCD manufacture method according to claim 5, is characterized in that: described polysilicon TG transfer gate (2) adopts secondary polysilicon process or three polysilicon process to make.
8. interior lines transfer CCD manufacture method according to claim 5, is characterized in that: described refractory metal adopts Titanium; Described refractory metal alloy adopts tungsten silicide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510174103.4A CN104766873A (en) | 2015-04-14 | 2015-04-14 | Internal line transferring CCD structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510174103.4A CN104766873A (en) | 2015-04-14 | 2015-04-14 | Internal line transferring CCD structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104766873A true CN104766873A (en) | 2015-07-08 |
Family
ID=53648605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510174103.4A Pending CN104766873A (en) | 2015-04-14 | 2015-04-14 | Internal line transferring CCD structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104766873A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258005A (en) * | 2018-01-11 | 2018-07-06 | 中国电子科技集团公司第四十四研究所 | A kind of CCD for having quick semiotic function of releasing |
| CN108565271A (en) * | 2018-01-23 | 2018-09-21 | 中国电子科技集团公司第四十四研究所 | Lead-light-shielding structure of CCD is shifted for interior lines |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030168679A1 (en) * | 2002-02-05 | 2003-09-11 | Junichi Nakai | Semiconductor device and method of manufacturing the same |
| US20050224696A1 (en) * | 2004-04-13 | 2005-10-13 | Matsushita Electric Industrial Co., Ltd. | Photosensor and solid state imaging device |
| CN103400847A (en) * | 2013-08-14 | 2013-11-20 | 中国电子科技集团公司第四十四研究所 | Technology for manufacturing CCD secondary or more than secondary polycrystalline silicon |
-
2015
- 2015-04-14 CN CN201510174103.4A patent/CN104766873A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030168679A1 (en) * | 2002-02-05 | 2003-09-11 | Junichi Nakai | Semiconductor device and method of manufacturing the same |
| US20050224696A1 (en) * | 2004-04-13 | 2005-10-13 | Matsushita Electric Industrial Co., Ltd. | Photosensor and solid state imaging device |
| CN103400847A (en) * | 2013-08-14 | 2013-11-20 | 中国电子科技集团公司第四十四研究所 | Technology for manufacturing CCD secondary or more than secondary polycrystalline silicon |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258005A (en) * | 2018-01-11 | 2018-07-06 | 中国电子科技集团公司第四十四研究所 | A kind of CCD for having quick semiotic function of releasing |
| CN108258005B (en) * | 2018-01-11 | 2021-11-16 | 中国电子科技集团公司第四十四研究所 | CCD with rapid signal release function |
| CN108565271A (en) * | 2018-01-23 | 2018-09-21 | 中国电子科技集团公司第四十四研究所 | Lead-light-shielding structure of CCD is shifted for interior lines |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10998364B2 (en) | Image sensor scheme for optical and electrical improvement | |
| CN100499138C (en) | TFT LCD array substrate structure and its producing method | |
| CN103730533B (en) | Photoelectric conversion device, its manufacture method and X light image detector | |
| CN102881700B (en) | A kind of cmos image sensor and its manufacture method | |
| CN102955612B (en) | A kind of touch sensing, its preparation method and display device | |
| CN104051474A (en) | Image sensor with stacked grid structure | |
| CN103779362B (en) | The manufacture method of the dull and stereotyped sniffer of X ray | |
| CN108107637A (en) | A kind of thin-film transistor LCD device array substrate and preparation method thereof | |
| CN105679969A (en) | Package method of organic light-emitting diode (OLED) device and an OLED package structure | |
| CN104766873A (en) | Internal line transferring CCD structure and manufacturing method thereof | |
| CN105280649B (en) | The preparation method of array substrate, display device and array substrate | |
| CN104793416A (en) | Array substrate, manufacturing method thereof and display panel | |
| CN102012589A (en) | TFT-LCD array substrate and manufacturing method thereof | |
| CN105206570B (en) | A kind of display panel and its manufacturing method | |
| CN104025269A (en) | Self-aligned metal oxide thin film transistor device and manufacturing method | |
| WO2021051819A1 (en) | Flat panel detector and manufacturing method therefor | |
| CN102446845A (en) | Method for improving warpage deformation of diamond wafer induced by ultra-thick top metal | |
| CN105304642B (en) | A kind of array substrate and its manufacturing method | |
| CN104078478B (en) | Back-illuminated type CMOS and its manufacture method | |
| CN104253087B (en) | The fill method in aluminum metal process contact hole | |
| KR100875178B1 (en) | Image sensor, and method of fabricating thereof | |
| CN107331725A (en) | A kind of preparation method for detecting substrate, detection substrate and X-ray detector | |
| CN101625492A (en) | Manufacturing method of array base plate of film transistor | |
| CN109727912A (en) | A kind of embedded touch array substrate and its manufacturing method | |
| CN105304664B (en) | A kind of structure of cmos image sensor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150708 |