CN114095674A - Active pixel image sensor, image processing method and storage medium - Google Patents
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
Abstract
The embodiment of the application provides an active pixel image sensor, an image processing method and a storage medium, wherein the active pixel image sensor comprises the following components: a photodiode PD pillar; a field effect transistor connected to the PD column; the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals; and the field effect transistor is used for reading out the electric signal and resetting.
Description
Description of the cases
The present application is proposed based on chinese patent application with application number 201910415214.8, application date 2019, 05 and 17, entitled active pixel image sensor, image processing method, and storage medium, and the divisional application is proposed within the scope described in the chinese patent application, and the entire content of the chinese patent application is incorporated into the present application again for reference.
Technical Field
The present disclosure relates to the field of image processing, and in particular, to an active pixel image sensor, an image processing method, and a storage medium.
Background
The Pixel circuit of the CMOS image Sensor can be divided into two types, namely, a Passive Pixel Sensor (PPS) and an Active Pixel Sensor (APS), where each Pixel has more than 3 transistors for implementing amplification reading and resetting of signals in the Pixel, as shown in fig. 1, taking a 4T Pixel image Sensor as an example, the working flow of the APS is as follows: electron-hole pairs generated by light irradiation are separated by a Photodiode (PD) electric field, so that electrons move to an n region and holes move to a p region; activating a reset tube, resetting the read-out region to a high level, and reading out the reset level; thereafter, the transfer gate is activated, transferring the charge from the photosensitive region to the n + region and reading out a signal level from the n + region; and obtaining the actual effective amplitude corresponding to the signal level by carrying out related double sampling on the reset level and the signal level.
However, the conventional APS requires three or more transistors, and the area occupied by the transistors is large, so that the size of the active pixel sensor is large, and when the size of the active pixel sensor needs to be reduced, the processing requirements for the transistors are increased.
Disclosure of Invention
The embodiment of the application provides an active pixel image sensor, an image processing method and a storage medium, which can reduce the size of the active pixel image sensor.
The technical scheme of the application is realized as follows:
the embodiment of the present application provides an active pixel image sensor, the active pixel image sensor includes:
a photodiode PD pillar;
a field effect transistor connected to the PD column;
the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals;
and the field effect transistor is used for reading the electric signal and resetting.
In the above active pixel image sensor, the size of the PD column is determined based on the resonance wavelength of the RGB monochromatic light and the refractive index of the optical signal.
In the above active pixel image sensor, the PD pillars have a shape including at least a rectangle, a circle, a parallelogram, and a rhombus.
In the active pixel image sensor, the field effect transistor comprises a control gate and a floating gate, an isolation strip is arranged between the control gate and the floating gate, and the control gate is connected with a gate of the field effect transistor.
In the above active pixel image sensor, the control gate is configured to focus the electrical signal to an n + region by applying a forward bias; transferring an electrical signal of the n + region into the floating gate when the forward bias is higher than a first voltage, the first voltage being a voltage at which tunneling between the n + region and the floating gate occurs; applying a forward bias voltage to the drain electrode, and recording the voltage of the control gate; reading out a signal level of the electrical signal when a voltage of the control gate is higher than a threshold voltage of the floating gate, the threshold voltage being determined by a signal intensity of the optical signal.
In the active pixel image sensor, the control gate is further configured to apply a reverse bias voltage, and when the reverse bias voltage is greater than a predetermined voltage threshold, the control gate transfers the electrical signal from the floating gate to the n + region for a reset operation.
In the active pixel image sensor, the field effect transistor is a floating gate metal-oxide semiconductor field effect transistor MOSFET.
In the active pixel image sensor, the n region of the PD column is connected to the p-type substrate of the fet.
The embodiment of the application provides an image processing method, which is applied to an active pixel image sensor, wherein the active pixel image sensor comprises a PD (potential difference) column and a field effect transistor connected with the PD column, and the method comprises the following steps:
absorbing RGB monochromatic light by using the PD column, and converting corresponding optical signals into electric signals;
and reading the electric signals by using the field effect transistor, and performing reset operation by using the field effect transistor so as to perform image processing on the electric signals to obtain corresponding images, wherein the field effect transistor is used for reading the electric signals and resetting.
In the above method, the field effect transistor includes a control gate and a floating gate, and the reading out the electrical signal by the field effect transistor includes:
focusing the electrical signal to an n + region by forward biasing the control gate;
transferring an electrical signal of the n + region into the floating gate when the forward bias is higher than a first voltage, the first voltage being a voltage at which tunneling between the n + region and the floating gate occurs;
applying a forward bias voltage to the drain electrode, and recording the voltage of the control gate;
reading out a signal level of the electrical signal when a voltage of the control gate is higher than a threshold voltage of the floating gate, the threshold voltage being determined by a signal intensity of the optical signal.
In the above method, the performing a reset operation using the fet includes:
reverse biasing the control gate;
and when the reverse bias voltage is greater than a preset voltage threshold value, transferring the electric signal from the floating gate to an n + region to perform reset operation.
The present application provides a storage medium, on which a computer program is stored, for application to an active pixel image sensor, the computer program, when executed by a processor, implementing the method as set forth in any one of the above.
The embodiment of the application provides an active pixel image sensor, an image processing method and a storage medium, wherein the active pixel image sensor comprises the following components: a photodiode PD pillar; a field effect transistor connected to the PD column; the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals; and the field effect transistor is used for reading out the electric signal and resetting. By adopting the implementation scheme, each pixel unit in the active pixel image sensor comprises a PD column and a field effect tube vertically connected with the PD column, and the process of carrying out image processing on the collected RGB monochromatic light is realized by utilizing the PD column and the field effect tube, so that the size of the active pixel image sensor can be reduced.
Drawings
Fig. 1 is a circuit diagram of a 4T active pixel image sensor according to the prior art;
fig. 2 is a schematic structural diagram of an active pixel image sensor according to an embodiment of the present disclosure;
fig. 3 is a structural composition diagram of an exemplary active pixel image sensor according to an embodiment of the present disclosure;
FIG. 4(a) is a top view of a single pixel of an exemplary active pixel image sensor provided by an embodiment of the present application;
FIG. 4(b) is a top view of a single pixel of an exemplary active pixel image sensor as proposed in the prior art;
fig. 5 is a flowchart of an image processing method according to an embodiment of the present application.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the present application. And are not intended to limit the present application.
Example one
An embodiment of the present application provides an active pixel image sensor, as shown in fig. 2, the active pixel image sensor includes:
a photodiode PD pillar;
a field effect transistor connected to the PD column;
the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals;
and the field effect transistor is used for reading the electric signal and resetting.
The active pixel image sensor provided by the embodiment of the application is suitable for image processing of collected optical signals to obtain the scene of images corresponding to the optical signals.
In the embodiment of the application, the RGB monochromatic light absorbed by the PD column is subjected to photoelectric conversion in the depletion region of the PD column, a corresponding optical signal is converted into an electric signal, then the electric signal is transferred and read by the field effect transistor, and after the electric signal is read, the reset operation is performed.
Optionally, the PD pillars are sized based on the resonant wavelength of the RGB monochromatic light and the refractive index of the light signal.
In the embodiment of the present application, each pixel of the active pixel image sensor includes a PD column with a diameter, and the diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light and the refractive index of the optical signal, or is obtained through optical simulation, and is specifically selected according to an actual situation, which is not specifically limited in the embodiment of the present application.
In the embodiment of the application, the dimension of the PD column is determined by using the formula (1)
PD column size (resonance wavelength-predetermined constant)/refractive index (1)
Illustratively, the diameter of the PD column is 70nm, the absorption rate of the PD column to blue light is the highest, and the absorption rate is as high as more than 95%; the diameter of the PD column is 90nm, and the absorption rate of the PD column to green light is highest; the PD column has a diameter of 120nm and has the highest absorption of red light.
In the embodiment of the application, the active pixel image sensor realizes the resonance absorption of the RGB monochromatic light by using the optical resonance of the PD column.
Optionally, the shape of the PD column at least includes a rectangle, a circle, a parallelogram, and a rhombus, which is specifically selected according to the actual situation, and the embodiment of the present application is not specifically limited.
Optionally, the field effect transistor includes a control gate and a floating gate, an isolation strip is disposed between the control gate and the floating gate, and the control gate is connected to the gate of the field effect transistor.
Optionally, the n region of the PD column is connected to the p-type substrate of the fet.
In the embodiment of the present application, as shown in fig. 3, the structure of the active pixel image sensor is schematically illustrated, wherein an n region of a PD pillar is connected to a p-type substrate of a field effect transistor, a control gate is isolated from a floating gate by an isolation strip, and the control gate is connected to a gate of the field effect transistor.
Optionally, the control gate is configured to focus the electrical signal to the n + region by applying a forward bias; transferring an electrical signal of the n + region into the floating gate when the forward bias is higher than a first voltage, the first voltage being a voltage at which tunneling between the n + region and the floating gate occurs; applying a forward bias voltage to the drain electrode, and recording the voltage of the control gate; reading out a signal level of the electrical signal when a voltage of the control gate is higher than a threshold voltage of the floating gate, the threshold voltage being determined by a signal intensity of the optical signal.
In the embodiment of the application, the electric signal is gathered in the channel of the n + region by applying forward bias to the control gate of the field effect transistor, when the forward bias is higher than a first voltage during tunneling between the floating gate and the n + region, the electric signal of the n + region is transferred to the floating gate, and at the moment, the threshold voltage in the floating gate is increased, wherein the threshold voltage in the floating gate is in direct proportion to the signal intensity of the optical signal.
In the embodiment of the application, after the electric signal is transferred to the floating gate, the source electrode of the field effect transistor is grounded, the drain electrode is forward biased, the voltage of the control gate is recorded in real time, when the voltage of the control gate is higher than the threshold voltage of the floating gate, the drain electrode flows current, and at the moment, the signal level of the electric signal is read through the amplifier.
Optionally, the control gate is further configured to apply a reverse bias voltage, and when the reverse bias voltage is greater than a preset voltage threshold, the electrical signal is transferred from the floating gate to the n + region to perform a reset operation.
In the embodiment of the present application, after reading the signal level of the electrical signal, a reset operation needs to be performed on the floating gate, specifically, a reverse bias is applied to the control gate, when the reverse bias is greater than a preset voltage threshold, the electrical signal in the floating gate tunnels out to neutralize a hole in the n + region, so that the threshold voltage in the floating gate is reduced, and at this time, the reset operation on the floating gate is completed.
Optionally, the field effect transistor is a device such as a floating gate metal-oxide semiconductor field effect transistor MOSFET having functions of reading out an electrical signal and resetting, which is specifically selected according to an actual situation, and the embodiment of the present application is not specifically limited.
Therefore, an active pixel image sensor for vertical charge transfer is generated, as shown in fig. 4(a), which is a top view of a single pixel of the active pixel image sensor, each pixel only includes one PD column in the vertical direction, while a top view of a single pixel of the current active pixel image sensor is as shown in fig. 4(b), each pixel includes 4 transistors in the vertical direction, which increases the area of the whole active pixel image sensor, while the active pixel image sensor in the present application only occupies the space of one PD column in the vertical direction, thereby reducing the size of the active pixel image sensor.
It can be understood that each pixel unit in the active pixel image sensor comprises a PD column and a field effect transistor vertically connected to the PD column, and the process of image processing on the collected RGB monochromatic light is implemented by using the PD column and the field effect transistor, so that the size of the active pixel image sensor can be reduced.
Example two
An embodiment of the present application provides an image processing method, which is applied to an active pixel image sensor, where the active pixel image sensor includes a PD pillar and a field effect transistor connected to the PD pillar, and as shown in fig. 5, the method may include:
and S101, absorbing the RGB monochromatic light by using a PD column, and converting a corresponding optical signal into an electric signal.
The image processing method provided by the embodiment of the application is suitable for a scene in which the acquired optical signals are subjected to image processing to obtain the images corresponding to the optical signals.
In the embodiment of the application, the RGB monochromatic light absorbed by the PD pillars undergoes photoelectric conversion in the depletion region of the PD pillars, and corresponding optical signals are converted into electrical signals.
In the embodiment of the present application, each pixel of the active pixel image sensor includes a PD column with a diameter, and the diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light and the refractive index of the optical signal, or is obtained through optical simulation, and is specifically selected according to an actual situation, which is not specifically limited in the embodiment of the present application.
In the embodiment of the application, the size of the PD column is determined by using the formula (1)
PD column size (resonance wavelength-predetermined constant)/refractive index (1)
Illustratively, the diameter of the PD column is 70nm, the absorption rate of the PD column to blue light is the highest, and the absorption rate is as high as more than 95%; the diameter of the PD column is 90nm, and the absorption rate of the PD column to green light is highest; the PD column has a diameter of 120nm and has the highest absorption of red light.
In the embodiment of the application, the active pixel image sensor realizes the resonance absorption of the RGB monochromatic light by using the optical resonance of the PD column.
Optionally, the shape of the PD column at least includes a rectangle, a circle, a parallelogram, and a rhombus, which is specifically selected according to the actual situation, and the embodiment of the present application is not specifically limited.
And S102, reading the electric signals by using a field effect transistor, and performing reset operation by using the field effect transistor so as to perform image processing on the electric signals to obtain corresponding images, wherein the field effect transistor is used for reading the electric signals and resetting.
After the active pixel image sensor converts an optical signal into an electrical signal by using the PD column, the active pixel image sensor reads the electrical signal by using the field effect transistor, and performs a reset operation by using the field effect transistor to perform image processing on the electrical signal, thereby obtaining a corresponding image.
In the embodiment of the present application, the process of reading out an electrical signal by using a field effect transistor in an active pixel image sensor specifically includes: the active pixel image sensor gathers the electric signal to an n + region by applying forward bias to the control gate; when the forward bias voltage is higher than a first voltage, the active pixel image sensor transfers an electric signal of an n + region into the floating gate, wherein the first voltage is a voltage when tunneling is carried out between the n + region and the floating gate; applying a forward bias voltage to the drain electrode, and recording the voltage of the control gate; the active pixel image sensor reads out a signal level of the electrical signal when a voltage of the control gate is higher than a threshold voltage of the floating gate, wherein the threshold voltage is determined by a signal intensity of the optical signal.
In the embodiment of the present application, the threshold voltage in the floating gate is proportional to the signal intensity of the optical signal.
In the embodiment of the application, after the electric signal is transferred to the floating gate, the source electrode of the field effect transistor is grounded, the drain electrode of the field effect transistor is forward biased, the voltage of the control gate is recorded in real time, when the voltage of the control gate is higher than the threshold voltage of the floating gate, the drain electrode of the field effect transistor flows out current, and at the moment, the signal level of the electric signal is read through the amplifier.
In the embodiment of the present application, the process of performing the reset operation by using the field effect transistor in the active pixel image sensor specifically includes: the active pixel image sensor applies a reverse bias to the control gate; when the reverse bias voltage is larger than the preset voltage threshold value, the active pixel image sensor transfers the electric signal from the floating gate to the n + region to perform the reset operation.
In the embodiment of the present application, after reading the signal level of the electrical signal, a reset operation needs to be performed on the floating gate, specifically, a reverse bias is applied to the control gate, when the reverse bias is greater than a preset voltage threshold, the electrical signal in the floating gate tunnels out to neutralize a hole in the n + region, so that the threshold voltage in the floating gate is reduced, and at this time, the reset operation on the floating gate is completed.
In the embodiment of the application, after the active pixel image sensor reads out the electric signal by using the field effect transistor, the active pixel image sensor performs image processing on the electric signal to obtain a corresponding image.
It can be understood that each pixel unit in the active pixel image sensor comprises a PD column and a field effect transistor vertically connected to the PD column, and the process of image processing on the collected RGB monochromatic light is implemented by using the PD column and the field effect transistor, so that the size of the active pixel image sensor can be reduced.
EXAMPLE III
The present embodiment provides a storage medium, on which a computer program is stored, where the computer readable storage medium stores one or more programs, where the one or more programs are executable by one or more processors and applied to an active pixel image sensor, and the computer program implements the image processing method according to embodiment two.
Specifically, the program instructions corresponding to an image processing method in the present embodiment, when read or executed by an electronic device, include the steps of:
absorbing RGB monochromatic light by using the PD column, and converting corresponding optical signals into electric signals;
and reading the electric signals by using the field effect transistor, and performing reset operation by using the field effect transistor so as to perform image processing on the electric signals to obtain corresponding images, wherein the field effect transistor is used for reading the electric signals and resetting.
In an embodiment of the present invention, further, the field effect transistor includes a control gate and a floating gate, the field effect transistor is used to read out the electrical signal, and the one or more programs are executed by the one or more processors, so as to implement the following steps:
focusing the electrical signal into an n + region by forward biasing the control gate;
transferring an electrical signal of the n + region into the floating gate when the forward bias is higher than a first voltage, the first voltage being a voltage at which tunneling between the n + region and the floating gate occurs;
applying a forward bias voltage to the drain electrode, and recording the voltage of the control gate;
reading out a signal level of the electrical signal when a voltage of the control gate is higher than a threshold voltage of the floating gate, the threshold voltage being determined by a signal intensity of the optical signal.
In an embodiment of the present invention, further, the substrate type includes a dielectric material or a metal thin film having a refractive index greater than a preset refractive index.
In an embodiment of the present invention, further, the field effect transistor is used to perform a reset operation, and the one or more programs are executed by the one or more processors, and specifically implement the following steps:
applying a reverse bias to the control gate;
and when the reverse bias voltage is larger than a preset voltage threshold value, transferring the electric signal from the floating gate to an n + region to perform reset operation.
The above description is only a preferred embodiment of the present application, and is not intended to limit the scope of the present application.
Claims (13)
1. An active pixel image sensor, comprising:
a photodiode PD pillar;
the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals; the size of the PD column is determined based on the resonance wavelength of the RGB monochromatic light and the refractive index of the optical signal.
2. The active pixel image sensor of claim 1, further comprising:
a field effect transistor connected to the PD column;
and the field effect transistor is used for reading the electric signal and resetting.
3. The active pixel image sensor of claim 1, wherein the PD pillars have a shape that includes at least a rectangle, a circle, a parallelogram, and a rhombus.
4. The active pixel image sensor of claim 2, wherein the fet comprises a control gate and a floating gate, an isolation strip being provided between the control gate and the floating gate, the control gate being connected to the gate of the fet.
5. The active pixel image sensor of claim 4,
the control gate is used for gathering the electric signal to the n + region by applying forward bias; when the forward bias voltage is higher than a first voltage, transferring an electric signal of the n + region into the floating gate, wherein the first voltage is a voltage during tunneling between the n + region and the floating gate; applying a forward bias voltage to the drain electrode, and recording the voltage of the control gate; reading out a signal level of the electrical signal when a voltage of the control gate is higher than a threshold voltage of the floating gate, the threshold voltage being determined by a signal intensity of the optical signal.
6. The active pixel image sensor of claim 4,
and the control gate is also used for applying a reverse bias voltage, and when the reverse bias voltage is greater than a preset voltage threshold value, the electric signal is transferred from the floating gate to the n + region so as to carry out reset operation.
7. The active pixel image sensor of claim 1, wherein the field effect transistor is a floating gate metal-oxide semiconductor field effect transistor (MOSFET).
8. The active pixel image sensor of claim 1, wherein the n-region of the PD pillar is connected to a p-type substrate of a field effect transistor.
9. An image processing method applied to an active pixel image sensor including PD pillars, the method comprising:
absorbing RGB monochromatic light by using the PD column, and converting corresponding optical signals into electric signals; the size of the PD column is determined based on the resonance wavelength of the RGB monochromatic light and the refractive index of the optical signal.
10. The method of claim 9, wherein the active pixel image sensor further comprises a field effect transistor connected to the PD pillar, the method comprising:
and reading the electric signals by using the field effect transistor, and performing reset operation by using the field effect transistor so as to perform image processing on the electric signals to obtain corresponding images, wherein the field effect transistor is used for reading the electric signals and resetting.
11. The method of claim 10, wherein said fet includes a control gate and a floating gate, and said sensing said electrical signal with said fet comprises:
focusing the electrical signal to an n + region by forward biasing the control gate;
when the forward bias voltage is higher than a first voltage, transferring an electric signal of the n + region into the floating gate, wherein the first voltage is a voltage during tunneling between the n + region and the floating gate;
applying a forward bias voltage to the drain electrode, and recording the voltage of the control gate;
reading out a signal level of the electrical signal when a voltage of the control gate is higher than a threshold voltage of the floating gate, the threshold voltage being determined by a signal intensity of the optical signal.
12. The method of claim 11, wherein said performing a reset operation with said fet comprises:
applying a reverse bias to the control gate;
and when the reverse bias voltage is larger than a preset voltage threshold value, transferring the electric signal from the floating gate to an n + region to perform reset operation.
13. A storage medium on which a computer program is stored for application to an active pixel image sensor, characterized in that the computer program, when being executed by a processor, carries out the method according to any one of claims 9-12.
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| CN110099231B (en) | 2021-12-28 |
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