CN110290334B - Pixel unit circuit, image processing method, storage medium and CMOS image sensor - Google Patents

Pixel unit circuit, image processing method, storage medium and CMOS image sensor Download PDF

Info

Publication number
CN110290334B
CN110290334B CN201910563830.8A CN201910563830A CN110290334B CN 110290334 B CN110290334 B CN 110290334B CN 201910563830 A CN201910563830 A CN 201910563830A CN 110290334 B CN110290334 B CN 110290334B
Authority
CN
China
Prior art keywords
preset
combined
column
rgb
monochromatic light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910563830.8A
Other languages
Chinese (zh)
Other versions
CN110290334A (en
Inventor
杨鑫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Oppo Mobile Telecommunications Corp Ltd
Original Assignee
Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong Oppo Mobile Telecommunications Corp Ltd filed Critical Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority to CN201910563830.8A priority Critical patent/CN110290334B/en
Publication of CN110290334A publication Critical patent/CN110290334A/en
Application granted granted Critical
Publication of CN110290334B publication Critical patent/CN110290334B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The embodiment of the application discloses a pixel unit circuit, an image processing method, a storage medium and a CMOS image sensor, which are applied to the CMOS image sensor, wherein the pixel unit circuit comprises: the combined PD column consists of at least two photodiode PD columns with preset diameters and is used for absorbing RGB combined optical signals of at least two preset wave bands by utilizing the at least two PD columns with the preset diameters respectively and converting the RGB combined optical signals into combined electric signals; the number of PD columns with one preset diameter in the at least two PD columns with the preset diameters is a preset number; and the pixel reading circuit is connected with the combined PD column and is used for amplifying the combined electric signal and reading the combined electric signal.

Description

Pixel unit circuit, image processing method, storage medium and CMOS image sensor
Technical Field
The present invention relates to the field of image processing, and in particular, to a pixel unit circuit, an image processing method, a storage medium, and a CMOS image sensor.
Background
In recent years, an image sensor is increasingly used in the field of image processing, wherein the image sensor includes: compared with a CCD (charge Coupled Device) image sensor, a CMOS image sensor has wider application because the CMOS image sensor has characteristics of high sensitivity, fast output capability, and the like.
In the conventional CMOS image sensor, each pixel unit circuit includes a Photodiode (PD) structure, and the PD structure is configured to absorb RGB monochromatic light, and when a black-and-white image needs to be obtained by using the CMOS image sensor, a plurality of RGB monochromatic light needs to be absorbed by using a plurality of pixel unit circuits.
However, each pixel unit circuit can only absorb RGB monochromatic light, and when RGB combined light corresponding to a black-and-white image needs to be obtained, a plurality of pixel unit circuits are required to absorb RGB monochromatic light, which further increases the size of the CMOS image sensor and greatly reduces the absorption rate of incident light when acquiring a black-and-white image.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention desirably provide a pixel unit circuit, an image processing method, a storage medium, and a CMOS image sensor, which can absorb RGB combined optical signals by using one pixel unit circuit, thereby reducing the size of the image sensor and improving the absorption rate of the image sensor to incident light.
The technical scheme of the application is realized as follows:
the embodiment of the present application provides a pixel unit circuit, which is applied to a CMOS image sensor, and is characterized in that the pixel unit circuit includes:
the combined PD column consists of at least two photodiode PD columns with preset diameters and is used for absorbing RGB combined optical signals of at least two preset wave bands respectively by utilizing the at least two PD columns with the preset diameters and converting the RGB combined optical signals into combined electric signals; the number of PD columns with one preset diameter in the at least two PD columns with the preset diameters is a preset number;
and the pixel reading circuit is connected with the combined PD column and is used for amplifying the combined electric signal and reading out the combined electric signal.
In the above pixel unit circuit, the PD pillars of at least two preset diameters include: at least two of a first PD column with a preset diameter, a second PD column with a preset diameter and a third PD column with a preset diameter; the RGB combined light signal includes: at least two RGB monochromatic light signals of the first RGB monochromatic light signal, the second RGB monochromatic light signal and the third RGB monochromatic light signal;
the PD column with the first preset diameter is used for absorbing the first RGB monochromatic light signal corresponding to a first preset waveband and converting the first RGB monochromatic light signal into a first electric signal, and the first preset waveband is a waveband corresponding to the PD column with the first preset diameter in the at least two preset wavebands;
the PD column with the second preset diameter is used for absorbing the second RGB monochromatic light signal corresponding to a second preset waveband and converting the second RGB monochromatic light signal into a second electric signal, and the second preset waveband is a waveband corresponding to the PD column with the second preset diameter in the at least two preset wavebands;
the PD column with the third preset diameter is used for absorbing the third RGB monochromatic light signals corresponding to the third preset wave band and converting the third RGB monochromatic light signals into third electric signals, and the third preset wave band is the wave band corresponding to the PD column with the third preset diameter in the at least two preset wave bands.
In the above pixel unit circuit, the combined PD pillars share one n region;
and accumulating at least two of the first electric signal, the second electric signal and the third electric signal in an n region to obtain the combined electric signal.
In the above pixel unit circuit, the pixel readout circuit includes: a transfer transistor connected to the combined PD column, a readout region connected to the transfer transistor, and an amplifier tube connected to the readout region;
the transfer transistor is used for transferring the combined electric signal to the readout area so as to read out the combined electric signal by the readout area;
the amplifying tube is used for amplifying the combined electric signal of the readout region.
In the above pixel unit circuit, the pixel readout circuit further includes: a reset transistor connected to the readout region;
the reset transistor is also used for storing a reset level, and the reset level is used for correlated double sampling with the combined electric signal;
the readout region is also used for reading out a reset level in the reset transistor;
the amplifying tube is also used for amplifying the reset level.
In the above pixel unit circuit, the PD column has a shape including at least a cylindrical shape and a regular polygon.
In the above pixel unit circuit, the PD pillars of at least two preset diameters include: the PD column with the first preset diameter, the PD column with the second preset diameter and the PD column with the third preset diameter; the RGB combined light signal is a white light signal combined by the first RGB monochromatic light signal, the second RGB monochromatic light signal, and the third RGB monochromatic light signal.
In the above pixel unit circuit, the preset diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light signal and the refractive index of the RGB monochromatic light signal.
The embodiment of the application provides an image processing method, which is applied to a CMOS image sensor formed by a pixel unit circuit, wherein the pixel unit circuit comprises a combined PD pillar formed by at least two PD pillars with preset diameters and a pixel reading circuit connected with the combined PD pillar, and the method comprises the following steps:
respectively absorbing RGB combined optical signals of at least two preset wave bands by utilizing the PD columns with at least two preset diameters, and converting the RGB combined optical signals into combined electrical signals;
the combined electrical signal is amplified and read out.
In the above method, the at least two PD columns of predetermined diameters comprise: at least two of a first PD column with a preset diameter, a second PD column with a preset diameter and a third PD column with a preset diameter; the RGB combined light signal includes: at least two RGB monochromatic light signals of the first RGB monochromatic light signal, the second RGB monochromatic light signal and the third RGB monochromatic light signal; the at least two PD columns with preset diameters are used for respectively absorbing RGB combined optical signals with at least two preset wave bands and converting the RGB combined optical signals into combined electrical signals, and the method comprises the following steps:
absorbing the first RGB monochromatic light signals corresponding to a first preset waveband by using the PD column with the first preset diameter; converting the first RGB monochromatic light signal into a first electric signal, wherein the first preset wave band is a wave band corresponding to the PD column with the first preset diameter in the at least two preset wave bands;
absorbing the second RGB monochromatic light signals corresponding to a second preset waveband by using the PD column with the second preset diameter; converting the second RGB monochromatic light signal into a second electric signal, wherein the second preset wave band is a wave band corresponding to a PD column with a second preset diameter in the at least two preset wave bands;
absorbing the third RGB monochromatic light signal corresponding to a third preset waveband by using the PD column with the third preset diameter; converting the third RGB monochromatic light signal into a third electric signal, wherein the third preset waveband is a waveband corresponding to a PD column with a third preset diameter in the at least two preset wavebands;
and accumulating at least two of the first electric signal, the second electric signal and the third electric signal to obtain a combined electric signal.
In the above method, the pixel readout circuit includes: a transfer transistor connected to the combined PD column, a readout region connected to the transfer transistor, a reset transistor connected to the readout region, and an amplifier tube, the amplifying the combined electrical signal and reading out the combined electrical signal, including:
transferring the combined electrical signal to the readout region using the transfer transistor;
reading the combined electrical signal and a reset level in the reset transistor using the readout region;
amplifying the combined electrical signal and the reset level with an amplifier tube to coherently double sample the electrical signal with the reset level.
The embodiment of the application provides a storage medium, wherein a computer program is stored on the storage medium, and is applied to a pixel unit circuit, and when the computer program is executed by a processor, the computer program realizes the method according to any one of the above items.
The embodiment of the application provides a CMOS image sensor, and the CMOS image sensor utilizes any one of the pixel unit circuits to realize an image processing method.
The embodiment of the application provides a pixel unit circuit, an image processing method, a storage medium and a CMOS image sensor, which are applied to the CMOS image sensor, wherein the pixel unit circuit comprises: the combined PD column consists of at least two photodiode PD columns with preset diameters and is used for absorbing RGB combined optical signals of at least two preset wave bands respectively by utilizing the at least two PD columns with the preset diameters and converting the RGB combined optical signals into combined electric signals; the number of PD columns with one preset diameter in the at least two PD columns with the preset diameters is a preset number; and the pixel reading circuit is connected with the combined PD column and is used for amplifying the combined electric signal and reading out the combined electric signal. With the implementation scheme of the pixel unit circuit, by arranging at least two PD pillars with preset diameters in each pixel unit circuit, the PD columns with at least two preset diameters respectively absorb RGB monochromatic light signals with different preset wave bands, combining the RGB monochromatic light signals with different preset wave bands to obtain RGB combined light signals, when the RGB combined light signals corresponding to the black-white image need to be obtained, PD columns with different diameters can be arranged according to the black-and-white image, the PD columns with different diameters are combined to obtain at least two PD columns with preset diameters, the at least two PD columns with preset diameters are utilized to obtain RGB combined optical signals corresponding to the black-and-white image, so that the CMOS image sensor can obtain RGB combined optical signals through one pixel unit circuit, therefore, the size of the CMOS image sensor is reduced, and the absorption rate of incident light when the CMOS image sensor collects images is improved.
Drawings
Fig. 1 is a first schematic circuit diagram of a pixel unit according to an embodiment of the present disclosure;
fig. 2 is a schematic top view of an exemplary arrangement of pixel units provided in an embodiment of the present application;
fig. 3 is a cross-sectional view of an exemplary pixel cell provided by an embodiment of the present application;
fig. 4 is a schematic diagram of an exemplary pixel readout circuit structure provided in the embodiment of the present application;
fig. 5 is a flowchart of a first image processing method according to an embodiment of the present disclosure;
fig. 6 is a flowchart of a second image processing method according to an embodiment of the present application.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the present application. And are not intended to limit the present application.
Example one
An embodiment of the present application provides a pixel unit circuit applied to a CMOS image sensor, as shown in fig. 1, the pixel unit circuit includes:
the combined PD column is composed of at least two photodiodes PD with preset diameters and is used for absorbing RGB combined optical signals of at least two preset wave bands respectively by utilizing the at least two PD columns with the preset diameters and converting the RGB combined optical signals into combined electric signals; the number of PD columns with one preset diameter in the at least two PD columns with the preset diameters is a preset number;
and the pixel reading circuit is connected with the combined PD column and is used for amplifying the combined electric signal and reading out the combined electric signal.
The pixel unit circuit provided by the embodiment of the application is suitable for a scene in which a received optical signal is subjected to image processing by using a COMS image sensor to obtain an image corresponding to the optical signal.
In the embodiment of the application, the CMOS image sensor is composed of a pixel unit circuit and a CMOS circuit, wherein the pixel unit circuit is configured to convert an acquired optical signal into an electrical signal and read out the electrical signal, and the CMOS circuit is configured to perform image processing on the electrical signal to obtain an image corresponding to the optical signal.
In the embodiment of the present application, the pixel unit circuit 1 absorbs the RGB combined optical signal by using the optical resonance principle of the combined PD column 11, wherein the PD columns with different preset diameters in the combined PD column correspondingly absorb the RGB monochromatic optical signals with different colors, the pixel unit circuit combines the RGB monochromatic lights with different colors to obtain the RGB combined optical signal, and the pixel unit circuit improves the optical density in the cylindrical PD structure by using the optical resonance, so as to improve the quantum efficiency and the signal-to-noise ratio of the CMOS image sensor, and further reduce the thickness of the image sensor.
In this embodiment, each pixel unit circuit is composed of a combined PD column and a pixel readout circuit 12, where the combined PD column includes at least two PD columns with preset diameters, and the at least two PD columns with preset diameters respectively and correspondingly absorb RGB monochromatic light signals with at least two preset wavebands, and accumulate the at least two monochromatic light signals to obtain an RGB combined light signal.
In this embodiment of the present application, the combined PD column may be composed of PD columns with two preset diameters, or may be composed of PD columns with three preset diameters, where the number of PD columns with each preset diameter in the combined PD column is a preset number, and the composition manner and the preset number of the combined PD column may be determined according to the color of the required RGB combined light, and this embodiment of the present application is not specifically limited.
In an embodiment of the present application, the RGB combined light signal includes: at least two kinds of RGB monochromatic light signals in first RGB monochromatic light signal, second RGB monochromatic light signal and the third RGB monochromatic light signal, at least two kinds of PD posts of predetermineeing the diameter are used for absorbing at least two kinds of RGB monochromatic light signals in first RGB monochromatic light signal, second RGB monochromatic light signal and the third RGB monochromatic light signal respectively.
Illustratively, the first RGB monochromatic light signal may be a blue light signal, the second RGB monochromatic light signal may be a green light signal, and the third RGB monochromatic light signal may be a red light signal, wherein the preset diameter of the PD column for absorbing blue light is 60 nm; the preset diameter of the PD column for absorbing green light is 90 nm; the preset diameter of the PD column for absorbing red light is 120 nm; when the at least two kinds of PD columns with preset diameters are 60nm PD columns and 120nm PD columns, respectively, the at least two kinds of PD columns with preset diameters correspondingly absorb blue light and red light; when the at least two kinds of PD columns with preset diameters are 60nm PD columns, 90nm PD columns and 120nm PD columns, respectively, the at least two kinds of PD columns with preset diameters correspondingly absorb blue light, green light and red light.
Illustratively, as shown in fig. 2, a plurality of PD columns of hundred nanometers are arranged in each pixel unit circuit, wherein a PD column with a diameter of 60nm is used for absorbing blue light, a PD column with a diameter of 90nm is used for absorbing green light, and a PD column with a diameter of 120nm is used for absorbing red light, and since white light is a superposition of blue light, green light and red light, the PD column with a diameter of 60nm, the PD column with a diameter of 90nm and the PD column with a diameter of 120nm are arranged in a mixed manner to jointly absorb white light, wherein the pixel cross-section of R, G, B three channels is shown in fig. 3 (each pixel in fig. 3 depicts 4 PD columns for illustration only), and three PD columns with different diameters are combined and connected with metal wiring.
Optionally, the PD columns of at least two preset diameters include: at least two of a first PD column with a preset diameter, a second PD column with a preset diameter and a third PD column with a preset diameter; the RGB combined light signal includes: at least two RGB monochromatic light signals of the first RGB monochromatic light signal, the second RGB monochromatic light signal and the third RGB monochromatic light signal;
the PD column with the first preset diameter is used for absorbing the first RGB monochromatic light signal corresponding to a first preset waveband and converting the first RGB monochromatic light signal into a first electric signal, and the first preset waveband is a waveband corresponding to the PD column with the first preset diameter in the at least two preset wavebands;
the PD column with the second preset diameter is used for absorbing the second RGB monochromatic light signal corresponding to a second preset waveband and converting the second RGB monochromatic light signal into a second electric signal, and the second preset waveband is a waveband corresponding to the PD column with the second preset diameter in the at least two preset wavebands;
the PD column with the third preset diameter is used for absorbing the third RGB monochromatic light signals corresponding to the third preset wave band and converting the third RGB monochromatic light signals into third electric signals, and the third preset wave band is the wave band corresponding to the PD column with the third preset diameter in the at least two preset wave bands.
In the embodiment of the present application, the first predetermined wavelength band corresponds to the first RGB monochromatic light signal, and the PD pillars with the first predetermined diameter correspondingly absorb the light signal of the first predetermined wavelength band, that is, the PD pillars with the first predetermined diameter correspondingly absorb the first RGB monochromatic light signal, and convert the first RGB monochromatic light signal into the first electrical signal; the second preset wave band corresponds to a second RGB monochromatic light signal, and the PD column with the second preset diameter correspondingly absorbs the light signal with the second preset wave band, namely, the PD column with the second preset diameter correspondingly absorbs the second RGB monochromatic light signal and converts the second RGB monochromatic light signal into a second electric signal; the third preset wavelength band corresponds to a third RGB monochromatic light signal, and the PD column with the third preset diameter correspondingly absorbs the light signal of the third preset wavelength band, that is, the PD column with the third preset diameter correspondingly absorbs the third RGB monochromatic light signal, and converts the third RGB monochromatic light signal into a third electrical signal.
Illustratively, the first RGB monochromatic light signal is a blue light signal, the wavelength corresponding to the blue light signal is 400nm, that is, the first predetermined wavelength band is 400nm, and the PD column with a diameter of 60nm can absorb the light signal with the wavelength of 400nm, so the PD column with a diameter of 60nm is used for absorbing the blue light signal and converting the blue light signal into a first electrical signal; the second RGB monochromatic light signal is a green light signal, the wavelength corresponding to the green light signal is 500nm, that is, the second preset waveband is 500nm, and the PD column with a diameter of 90nm can absorb the light signal with the wavelength of 500nm, so the PD column with a diameter of 90nm is used for absorbing the green light signal and converting the green light signal into a second electrical signal; the third RGB monochromatic light signal is a red light signal, the wavelength corresponding to the red light signal is 700nm, that is, the third predetermined waveband is 700nm, and the PD column with a diameter of 120nm can absorb the light signal with the wavelength of 700nm, so the PD column with a diameter of 120nm is used for absorbing the red light signal and converting the red light signal into a third electrical signal.
Optionally, the combined PD pillars share one n region;
and accumulating at least two of the first electric signal, the second electric signal and the third electric signal in an n region to obtain the combined electric signal.
In the embodiment of the present application, the combined PD column is composed of at least two PD columns with preset diameters, wherein the at least two PD columns with preset diameters share one n region, and when the combined PD column in the pixel unit circuit obtains the first electrical signal, the second electrical signal, and the third electrical signal, the first electrical signal, the second electrical signal, and the third electrical signal are accumulated in the n region, so as to obtain the combined electrical signal.
It should be noted that the combined electrical signal may be a summation signal of the first electrical signal, the second electrical signal, and the third electrical signal.
In the embodiment of the present application, a circuit structure of the pixel readout circuit is as shown in fig. 4, the combined PD column includes a 60nm PD column, a 90nm PD column, and a 120nm PD column (each pixel in fig. 4 depicts 4 PD columns, which are only used for illustration), the three PD columns perform photoelectric conversion on the absorbed blue light signal, green light signal, and red light signal to obtain a first electric signal corresponding to the blue light signal, a second electric signal corresponding to the green light signal, and a third electric signal corresponding to the red light signal, and then the CMOS image sensor transfers the first electric signal, the second electric signal, and the third electric signal to an n region common to the three PD columns for accumulation, so as to obtain a combined electric signal.
Optionally, the pixel readout circuit includes: a transfer transistor connected to the combined PD column, a readout region connected to the transfer transistor, and an amplifier tube connected to the readout region;
the transfer transistor is used for transferring the combined electric signal to the readout area so as to read out the combined electric signal by the readout area;
the amplifying tube is used for amplifying the combined electric signal of the readout region.
In the embodiment of the present application, the source of the transfer transistor is connected to the n region of the combined PD column, and the drain of the transfer transistor is connected to the readout region, as shown in fig. 4, and the transfer transistor is used to transfer the combined electrical signal in the combined PD column to the readout region for the readout region to read out the combined electrical signal.
In the embodiment of the application, the grid electrode of the amplifying tube is connected with the readout region and is used for amplifying the combined electric signal read out by the readout region.
Optionally, the pixel readout circuit further includes: a reset transistor connected to the readout region;
the reset transistor is also used for storing a reset level, and the reset level is used for correlated double sampling with the combined electric signal;
the readout region is also used for reading out a reset level in the reset transistor;
the amplifying tube is also used for amplifying the reset level.
In the embodiment of the present application, the source of the reset transistor is connected to the power supply, and the drain of the reset transistor is connected to the readout region, as shown in fig. 4, and the reset transistor stores therein a reset level for correlated double sampling with the combined electrical signal to reduce noise of the combined electrical signal.
In the embodiment of the present application, the source of the amplifier tube is connected to the power supply, as shown in fig. 4, the drain of the amplifier tube is connected to the source of the gate tube, and the drain of the gate tube is connected to the output terminal.
In the embodiment of the application, the readout region is also used for reading out the reset level in the reset transistor, and the amplifying tube is also used for amplifying the reset level.
Optionally, the PD pillars have a shape including at least a cylinder and a regular polygon.
In the embodiment of the present application, the PD column may be a cylinder or a regular polygon, or may be other shapes, and a specific shape of the PD column may be selected according to an actual situation, which is not limited in the embodiment of the present application.
Optionally, the PD columns of at least two preset diameters include: the PD column with the first preset diameter, the PD column with the second preset diameter and the PD column with the third preset diameter; the RGB combined light signal is a white light signal combined by the first RGB monochromatic light signal, the second RGB monochromatic light signal, and the third RGB monochromatic light signal.
In the embodiment of the present application, when the CMOS image sensor needs to acquire black and white image information, the combined PD column in the CMOS image sensor includes: a first PD column of a predetermined diameter, a second PD column of a predetermined diameter, and a third PD column of a predetermined diameter. The PD column with the first preset diameter can absorb a blue light signal; the PD column with the second preset diameter can absorb a green light signal; the PD column with the third preset diameter can absorb a red light signal; the combined PD column combines the absorbed blue light signal, green light signal and red light signal to obtain a white light signal.
It should be noted that, when the pixel unit circuit receives incident light, the PD columns with different preset diameters in the combined PD column may be used to respectively absorb a blue light signal, a green light signal, and a red light signal, and then the combined PD column accumulates the blue light signal, the green light signal, and the red light signal to obtain a white light signal.
In the embodiment of the application, the pixel unit circuit can combine to obtain white light signals with different degrees of brightness according to the intensity of the received blue light signal, the received green light signal and the received red light signal, and when the pixel unit circuit does not receive the blue light signal, the received green light signal and the received red light signal, the pixel unit circuit can obtain black and white image information according to the intensity of the received blue light signal, the received green light signal and the received red light signal.
Optionally, the preset diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light signal and the refractive index of the RGB monochromatic light signal.
In the embodiment of the present application, the preset diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light and the refractive index of the optical signal, or is obtained through optical simulation, and is specifically selected according to the actual situation, which is not specifically limited in the embodiment of the present application.
In the embodiment of the present application, the preset diameter of the PD column is determined by using the formula (1)
Predetermined diameter of PD column ═ (resonance wavelength-predetermined constant)/refractive index (1)
It is understood that, in the present application, a pixel unit circuit includes a PD column of at least two preset diameters, at least two PD columns with preset diameters are used for respectively absorbing RGB monochromatic light signals with different preset wave bands, and combines the RGB monochromatic light signals of different preset wave bands to obtain RGB combined light signals, when the RGB combined light signals corresponding to the black-and-white image are required to be obtained, PD columns with different diameters can be arranged according to the black-and-white image, the PD columns with different diameters are combined to obtain at least two PD columns with preset diameters, the at least two PD columns with preset diameters are utilized to obtain RGB combined optical signals corresponding to the black-and-white image, so that the CMOS image sensor can obtain RGB combined optical signals through one pixel unit circuit, therefore, the size of the CMOS image sensor is reduced, and the absorption rate of incident light when the CMOS image sensor collects images is improved.
Example two
An embodiment of the present application provides an image processing method applied to a CMOS image sensor composed of a pixel unit circuit, where the pixel unit circuit includes a combined PD pillar composed of at least two PD pillars with preset diameters and a pixel readout circuit connected to the combined PD pillar, as shown in fig. 5, and the method includes:
s101, respectively absorbing RGB combined optical signals of at least two preset wave bands by utilizing PD columns with at least two preset diameters, and converting the RGB combined optical signals into combined electrical signals;
the pixel unit circuit provided by the embodiment of the application is suitable for a scene in which a received optical signal is subjected to image processing by using a COMS image sensor to obtain an image corresponding to the optical signal.
In the embodiment of the application, the CMOS image sensor is composed of a pixel unit circuit and a CMOS circuit, wherein the pixel unit circuit is configured to convert an acquired optical signal into an electrical signal and read out the electrical signal, and the CMOS circuit is configured to perform image processing on the electrical signal to obtain an image corresponding to the optical signal.
In the embodiment of the application, the pixel unit circuit absorbs the RGB combined optical signal by using an optical resonance principle of the combined PD column, wherein the PD columns with different preset diameters in the combined PD column correspondingly absorb the RGB monochromatic optical signals with different colors, the pixel unit circuit combines the RGB monochromatic lights with different colors to obtain the RGB combined optical signal, and the pixel unit circuit improves the optical density in the cylindrical PD structure by using the optical resonance, so that the quantum efficiency and the signal-to-noise ratio of the CMOS image sensor are improved, and the thickness of the image sensor is further reduced.
In this embodiment, each pixel unit circuit is composed of a combined PD column and a pixel readout circuit, where the combined PD column includes at least two PD columns with preset diameters, and the at least two PD columns with preset diameters respectively and correspondingly absorb at least two RGB monochromatic light signals with preset wavebands, and accumulate the at least two monochromatic light signals to obtain a combined light signal.
In the embodiment of the present application, when the pixel unit circuit receives incident light, at least two kinds of PD pillars with preset diameters respectively absorb RGB combined optical signals of at least two kinds of preset wavebands, and convert the absorbed RGB combined optical signals into combined electrical signals.
In this embodiment, the at least two PD columns with predetermined diameters may be composed of two PD columns with predetermined diameters, or may be composed of three PD columns with predetermined diameters, where the number of PD columns with each predetermined diameter in the combined PD column is a predetermined number, and the composition manner and the predetermined number of the combined PD columns may be determined according to the color of the required RGB combined light, which is not specifically limited in this embodiment.
Optionally, the preset diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light signal and the refractive index of the RGB monochromatic light signal.
In the embodiment of the present application, the preset diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light and the refractive index of the optical signal, or is obtained through optical simulation, and is specifically selected according to the actual situation, which is not specifically limited in the embodiment of the present application.
In the embodiment of the present application, the preset diameter of the PD column is determined by using the formula (1)
Predetermined diameter of PD column ═ (resonance wavelength-predetermined constant)/refractive index (1)
Illustratively, the diameter of the corresponding PD column when absorbing blue light is around 60 nm; the diameter of the corresponding PD column is 90nm when absorbing green light; the diameter of the corresponding PD column when absorbing red light is 120 nm.
In an embodiment of the present application, the PD columns of at least two preset diameters comprise: at least two of a first PD column with a preset diameter, a second PD column with a preset diameter and a third PD column with a preset diameter; the RGB combined light signal includes: at least two RGB monochromatic light signals of the first RGB monochromatic light signal, the second RGB monochromatic light signal and the third RGB monochromatic light signal.
In the embodiment of the present application, fig. 6 is a flowchart of a second image processing method provided in the embodiment of the present application, and as shown in fig. 6, S101 may specifically include S1011-S1014. The following were used:
s1011, absorbing a first RGB monochromatic light signal corresponding to a first preset wave band by using a PD column with a first preset diameter; converting the first RGB monochromatic light signal into a first electric signal, wherein the first preset wave band is a wave band corresponding to a PD column with a first preset diameter in at least two preset wave bands;
in this embodiment of the application, the first predetermined wavelength band corresponds to the first RGB monochromatic light signal, and the PD column with the first predetermined diameter corresponds to absorb the light signal with the first predetermined wavelength band, that is, the PD column with the first predetermined diameter corresponds to absorb the first RGB monochromatic light signal, and converts the first RGB monochromatic light signal into the first electrical signal.
It should be noted that the first predetermined wavelength band may be a wavelength band corresponding to a PD column with a first predetermined diameter in at least two predetermined wavelength bands.
Illustratively, the first RGB monochromatic light signal is a blue light signal, the wavelength of the blue light signal is 400nm, that is, the first predetermined wavelength band is 400nm, and the PD column with a diameter of 60nm can absorb the light signal with the wavelength of 400nm, so the PD column with a diameter of 60nm is used to absorb the blue light signal and convert the blue light signal into the first electrical signal.
S1012, absorbing a second RGB monochromatic light signal corresponding to a second preset wave band by using a PD column with a second preset diameter; converting the second RGB monochromatic light signal into a second electric signal, wherein the second preset wave band is a wave band corresponding to a PD column with a second preset diameter in at least two preset wave bands;
in this embodiment of the application, the second predetermined wavelength band corresponds to the second RGB monochromatic light signal, and the PD pillars with the second predetermined diameter correspondingly absorb the light signal of the second predetermined wavelength band, that is, the PD pillars with the second predetermined diameter correspondingly absorb the second RGB monochromatic light signal, and convert the second RGB monochromatic light signal into the second electrical signal.
It should be noted that the second predetermined wavelength band may be a wavelength band corresponding to a PD column with a second predetermined diameter in at least two predetermined wavelength bands.
Illustratively, the second RGB monochromatic light signal is a green light signal corresponding to a wavelength of 500nm, i.e., the second predetermined wavelength band is 500nm, and the PD column having a diameter of 90nm can absorb the light signal having the wavelength of 500nm, so the PD column having a diameter of 90nm is used to absorb the green light signal and convert the green light signal into the second electrical signal.
S1013, absorbing a third RGB monochromatic light signal corresponding to a third preset wave band by using a PD column with a third preset diameter; converting the third RGB monochromatic light signal into a third electric signal, wherein the third preset wave band is a wave band corresponding to a PD column with a third preset diameter in at least two preset wave bands;
in this embodiment of the application, the third predetermined wavelength band corresponds to the third RGB monochromatic light signal, and the PD column with the third predetermined diameter corresponds to absorb the light signal of the third predetermined wavelength band, that is, the PD column with the third predetermined diameter corresponds to absorb the third RGB monochromatic light signal, and converts the third RGB monochromatic light signal into the third electrical signal.
It should be noted that the third predetermined wavelength band may be a wavelength band corresponding to a PD column with a third predetermined diameter in at least two predetermined wavelength bands.
Illustratively, the third RGB monochromatic light signal is a red light signal, the red light signal corresponds to a wavelength of 700nm, that is, the third predetermined wavelength band is 700nm, and the PD column with a diameter of 120nm can absorb the light signal with the wavelength of 700nm, so the PD column with a diameter of 120nm is used for absorbing the red light signal and converting the red light signal into the third electrical signal.
And S1014, accumulating at least two of the first electric signal, the second electric signal and the third electric signal to obtain a combined electric signal.
In the embodiment of the present application, when the combined PD column in the pixel unit circuit obtains the first electrical signal, the second electrical signal, and the third electrical signal, the first electrical signal, the second electrical signal, and the third electrical signal may be added, so as to obtain the combined electrical signal.
It should be noted that the combined electrical signal may be a summation signal of the first electrical signal, the second electrical signal, and the third electrical signal.
And S102, amplifying the combined electric signal and reading out the combined electric signal.
In the embodiment of the present application, after the pixel unit circuit absorbs the RGB combined optical signal using the combined PD column, the combined optical signal is converted into a combined electrical signal, and the combined electrical signal is amplified and read using the pixel read-out circuit.
In an embodiment of the present application, a pixel readout circuit includes: the transfer transistor is connected with the combined PD column, the reading area is connected with the transfer transistor, and the reset transistor and the amplifying tube are connected with the reading area.
Note that the source of the reset transistor is connected to a power supply; the drain electrode of the reset tube is connected with the reading area, wherein the reset tube stores a reset level.
In the embodiment of the present application, the pixel readout circuit transfers the combined electrical signal to the readout region using the transfer transistor; the readout region reads the combined electrical signal and a reset level in the reset transistor, and the amplifying tube amplifies the combined electrical signal and the reset level to perform correlated double sampling on the electrical signal using the reset level, thereby reducing noise of the readout electrical signal.
In the embodiment of the application, the source electrode of the transfer transistor is connected with the n region of the combined PD column, the drain electrode of the transfer transistor is connected with the readout region, electron-hole pairs generated on the combined PD column by light irradiation are separated due to the existence of a PPD electric field, combined electrons move to the n region, combined holes move to the p region, the transfer transistor transfers the combined electrons in the n region to the readout region, and the readout region can read out a combined electric signal.
In the embodiment of the application, light is subjected to photoelectric conversion in the depletion region of the PD column, an optical signal is converted into an electric signal, the electric signal moves to the n region of the PD column, and the electric signal of the n region is transferred to the reading region by the transfer transistor.
It is understood that, in the present application, a pixel unit circuit includes a PD column of at least two preset diameters, at least two PD columns with preset diameters are used for respectively absorbing RGB monochromatic light signals with different preset wave bands, and combines the RGB monochromatic light signals of different preset wave bands to obtain RGB combined light signals, when the RGB combined light signals corresponding to the black-and-white image are required to be obtained, PD columns with different diameters can be arranged according to the black-and-white image, the PD columns with different diameters are combined to obtain at least two PD columns with preset diameters, the at least two PD columns with preset diameters are utilized to obtain RGB combined optical signals corresponding to the black-and-white image, so that the CMOS image sensor can obtain RGB combined optical signals through one pixel unit circuit, therefore, the size of the CMOS image sensor is reduced, and the absorption rate of incident light when the CMOS image sensor collects images is improved.
EXAMPLE III
The embodiment of the present application provides a storage medium, on which a computer program is stored, where the computer readable storage medium stores one or more programs, where the one or more programs are executable by one or more processors and applied to a pixel unit circuit, and the computer program implements the image processing method according to the second embodiment.
Specifically, the program instructions corresponding to an image processing method in the present embodiment, when read or executed by an electronic device, include the steps of:
respectively absorbing RGB combined optical signals of at least two preset wave bands by utilizing the PD columns with at least two preset diameters, and converting the RGB combined optical signals into combined electrical signals;
the combined electrical signal is amplified and read out.
In an embodiment of the present application, further, the at least two PD columns of preset diameters include: at least two of a first PD column with a preset diameter, a second PD column with a preset diameter and a third PD column with a preset diameter; the RGB combined light signal includes: at least two RGB monochromatic light signals of the first RGB monochromatic light signal, the second RGB monochromatic light signal and the third RGB monochromatic light signal; the one or more programs, when executed by the one or more processors, further implement the steps of:
absorbing the first RGB monochromatic light signals corresponding to a first preset waveband by using the PD column with the first preset diameter; converting the first RGB monochromatic light signal into a first electric signal, wherein the first preset wave band is a wave band corresponding to the PD column with the first preset diameter in the at least two preset wave bands;
absorbing the second RGB monochromatic light signals corresponding to a second preset waveband by using the PD column with the second preset diameter; converting the second RGB monochromatic light signal into a second electric signal, wherein the second preset wave band is a wave band corresponding to a PD column with a second preset diameter in the at least two preset wave bands;
absorbing the third RGB monochromatic light signal corresponding to a third preset waveband by using the PD column with the third preset diameter; converting the third RGB monochromatic light signal into a third electric signal, wherein the third preset waveband is a waveband corresponding to a PD column with a third preset diameter in the at least two preset wavebands;
and accumulating at least two of the first electric signal, the second electric signal and the third electric signal to obtain a combined electric signal.
In an embodiment of the present application, further, the pixel readout circuit includes: a transfer transistor connected to the combined PD column, a readout region connected to the transfer transistor, a reset transistor connected to the readout region, and an amplifier tube; the one or more programs, when executed by the one or more processors, further implement the steps of:
transferring the combined electrical signal to the readout region using the transfer transistor;
reading the combined electrical signal and a reset level in the reset transistor using the readout region;
amplifying the combined electrical signal and the reset level with an amplifier tube to coherently double sample the electrical signal with the reset level.
Example four
The embodiment of the present application provides a CMOS image sensor, which uses the pixel unit circuit according to the first embodiment to implement an image processing method.
Specifically, when the CMOS image sensor in the present embodiment implements an image processing method using a pixel unit circuit, the CMOS image sensor includes the following structure:
the combined PD column consists of at least two photodiode PD columns with preset diameters and is used for absorbing RGB combined optical signals of at least two preset wave bands respectively by utilizing the at least two PD columns with the preset diameters and converting the RGB combined optical signals into combined electric signals; the number of PD columns with one preset diameter in the at least two PD columns with the preset diameters is a preset number;
and the pixel reading circuit is connected with the combined PD column and is used for amplifying the combined electric signal and reading out the combined electric signal.
In an embodiment of the present application, further, the at least two PD columns of preset diameters include: at least two of a first PD column with a preset diameter, a second PD column with a preset diameter and a third PD column with a preset diameter; the RGB combined light signal includes: at least two RGB monochromatic light signals of the first RGB monochromatic light signal, the second RGB monochromatic light signal and the third RGB monochromatic light signal;
the PD column with the first preset diameter is used for absorbing the first RGB monochromatic light signal corresponding to a first preset waveband and converting the first RGB monochromatic light signal into a first electric signal, and the first preset waveband is a waveband corresponding to the PD column with the first preset diameter in the at least two preset wavebands;
the PD column with the second preset diameter is used for absorbing the second RGB monochromatic light signal corresponding to a second preset waveband and converting the second RGB monochromatic light signal into a second electric signal, and the second preset waveband is a waveband corresponding to the PD column with the second preset diameter in the at least two preset wavebands;
the PD column with the third preset diameter is used for absorbing the third RGB monochromatic light signals corresponding to the third preset wave band and converting the third RGB monochromatic light signals into third electric signals, and the third preset wave band is the wave band corresponding to the PD column with the third preset diameter in the at least two preset wave bands.
In an embodiment of the present application, further, the combined PD pillars share one n-region;
and accumulating at least two of the first electric signal, the second electric signal and the third electric signal in an n region to obtain the combined electric signal.
In an embodiment of the present application, further, the pixel readout circuit includes: a transfer transistor connected to the combined PD column, a readout region connected to the transfer transistor, and an amplifier tube connected to the readout region;
the transfer transistor is used for transferring the combined electric signal to the readout area so as to read out the combined electric signal by the readout area;
the amplifying tube is used for amplifying the combined electric signal of the readout region.
In an embodiment of the present application, further, the pixel readout circuit further includes: a reset transistor connected to the readout region;
the reset transistor is also used for storing a reset level, and the reset level is used for correlated double sampling with the combined electric signal;
the readout region is also used for reading out a reset level in the reset transistor;
the amplifying tube is also used for amplifying the reset level.
In an embodiment of the present application, further, the PD pillars have a shape including at least a cylindrical shape and a regular polygon.
In an embodiment of the present application, further, the at least two PD columns of preset diameters include: the PD column with the first preset diameter, the PD column with the second preset diameter and the PD column with the third preset diameter; the RGB combined light signal is a white light signal combined by the first RGB monochromatic light signal, the second RGB monochromatic light signal, and the third RGB monochromatic light signal.
In an embodiment of the present application, further, the preset diameter of the PD column is determined based on a resonant wavelength of the RGB monochromatic light signal and a refractive index of the RGB monochromatic light signal.
The above description is only a preferred embodiment of the present application, and is not intended to limit the scope of the present application.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of a hardware embodiment, a software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
The above description is only a preferred embodiment of the present application, and is not intended to limit the scope of the present application.

Claims (12)

1. A pixel cell circuit applied to a CMOS image sensor, the pixel cell circuit comprising:
the combined PD column consists of at least two photodiode PD columns with preset diameters and is used for absorbing RGB combined optical signals of at least two preset wave bands respectively by utilizing the at least two PD columns with the preset diameters and converting the RGB combined optical signals into combined electric signals; the number of PD columns with one preset diameter in the at least two PD columns with the preset diameters is a preset number; the preset diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light signal and the refractive index of the RGB monochromatic light signal;
a pixel readout circuit connected to the combined PD column, for amplifying the combined electrical signal and reading out the combined electrical signal;
the combined PD column shares one n region, and the RGB combined electric signal comprises at least two RGB monochromatic electric signals corresponding to at least two RGB monochromatic light signals;
the pixel unit circuit is further configured to accumulate the at least two RGB monochromatic electrical signals in an n region to obtain the combined electrical signal.
2. The pixel cell circuit of claim 1, wherein the at least two preset diameter PD pillars comprise: at least two of a first PD column with a preset diameter, a second PD column with a preset diameter and a third PD column with a preset diameter; the RGB combined light signal includes: at least two RGB monochromatic light signals of the first RGB monochromatic light signal, the second RGB monochromatic light signal and the third RGB monochromatic light signal;
the PD column with the first preset diameter is used for absorbing the first RGB monochromatic light signal corresponding to a first preset waveband and converting the first RGB monochromatic light signal into a first electric signal, and the first preset waveband is a waveband corresponding to the PD column with the first preset diameter in the at least two preset wavebands;
the PD column with the second preset diameter is used for absorbing the second RGB monochromatic light signal corresponding to a second preset waveband and converting the second RGB monochromatic light signal into a second electric signal, and the second preset waveband is a waveband corresponding to the PD column with the second preset diameter in the at least two preset wavebands;
the PD column with the third preset diameter is used for absorbing the third RGB monochromatic light signals corresponding to the third preset wave band and converting the third RGB monochromatic light signals into third electric signals, and the third preset wave band is the wave band corresponding to the PD column with the third preset diameter in the at least two preset wave bands.
3. The pixel cell circuit of claim 2, wherein the combined PD pillars share one n-region;
and accumulating at least two of the first electric signal, the second electric signal and the third electric signal in an n region to obtain the combined electric signal.
4. The pixel cell circuit of claim 1, wherein the pixel readout circuit comprises: a transfer transistor connected to the combined PD column, a readout region connected to the transfer transistor, and an amplifier tube connected to the readout region;
the transfer transistor is used for transferring the combined electric signal to the readout area so as to read out the combined electric signal by the readout area;
the amplifying tube is used for amplifying the combined electric signal of the readout region.
5. The pixel cell circuit of claim 4, wherein the pixel readout circuit further comprises: a reset transistor connected to the readout region;
the reset transistor is also used for storing a reset level, and the reset level is used for correlated double sampling with the combined electric signal;
the readout region is also used for reading out a reset level in the reset transistor;
the amplifying tube is also used for amplifying the reset level.
6. The pixel cell circuit according to claim 1, wherein the PD pillars have a shape including at least a cylinder and a regular polygon.
7. The pixel cell circuit of claim 2, wherein the at least two preset diameter PD pillars comprise: the PD column with the first preset diameter, the PD column with the second preset diameter and the PD column with the third preset diameter; the RGB combined light signal is a white light signal combined by the first RGB monochromatic light signal, the second RGB monochromatic light signal, and the third RGB monochromatic light signal.
8. An image processing method applied to a COMS image sensor composed of pixel unit circuits, wherein the pixel unit circuits comprise a combined PD column composed of at least two PD columns with preset diameters and a pixel readout circuit connected with the combined PD column, the method comprises the following steps:
respectively absorbing RGB combined optical signals of at least two preset wave bands by utilizing the PD columns with at least two preset diameters, and converting the RGB combined optical signals into combined electrical signals; the preset diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light signal and the refractive index of the RGB monochromatic light signal;
amplifying the combined electrical signal and reading out the combined electrical signal;
the combined PD column shares one n region, and the RGB combined electric signal comprises at least two RGB monochromatic electric signals corresponding to at least two RGB monochromatic light signals;
the pixel unit circuit is further configured to accumulate the at least two RGB monochromatic electrical signals in an n region to obtain the combined electrical signal.
9. The method of claim 8, wherein the at least two PD columns of predetermined diameters comprise: at least two of a first PD column with a preset diameter, a second PD column with a preset diameter and a third PD column with a preset diameter; the RGB combined light signal includes: at least two RGB monochromatic light signals of the first RGB monochromatic light signal, the second RGB monochromatic light signal and the third RGB monochromatic light signal; the at least two PD columns with preset diameters are used for respectively absorbing RGB combined optical signals with at least two preset wave bands and converting the RGB combined optical signals into combined electrical signals, and the method comprises the following steps:
absorbing the first RGB monochromatic light signals corresponding to a first preset waveband by using the PD column with the first preset diameter; converting the first RGB monochromatic light signal into a first electric signal, wherein the first preset wave band is a wave band corresponding to the PD column with the first preset diameter in the at least two preset wave bands;
absorbing the second RGB monochromatic light signals corresponding to a second preset waveband by using the PD column with the second preset diameter; converting the second RGB monochromatic light signal into a second electric signal, wherein the second preset wave band is a wave band corresponding to a PD column with a second preset diameter in the at least two preset wave bands;
absorbing the third RGB monochromatic light signal corresponding to a third preset waveband by using the PD column with the third preset diameter; converting the third RGB monochromatic light signal into a third electric signal, wherein the third preset waveband is a waveband corresponding to a PD column with a third preset diameter in the at least two preset wavebands;
and accumulating at least two of the first electric signal, the second electric signal and the third electric signal to obtain a combined electric signal.
10. The method of claim 8, wherein the pixel readout circuit comprises: a transfer transistor connected to the combined PD column, a readout region connected to the transfer transistor, a reset transistor connected to the readout region, and an amplifier tube, the amplifying the combined electrical signal and reading out the combined electrical signal, including:
transferring the combined electrical signal to the readout region using the transfer transistor;
reading the combined electrical signal and a reset level in the reset transistor using the readout region;
amplifying the combined electrical signal and the reset level with an amplifier tube to coherently double sample the electrical signal with the reset level.
11. A storage medium having stored thereon a computer program for application to a pixel cell circuit, characterized in that the computer program, when being executed by a processor, is adapted to carry out the method of any one of claims 8 to 10.
12. A CMOS image sensor characterized in that it implements an image processing method using the pixel cell circuit according to any one of claims 1 to 7.
CN201910563830.8A 2019-06-26 2019-06-26 Pixel unit circuit, image processing method, storage medium and CMOS image sensor Active CN110290334B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910563830.8A CN110290334B (en) 2019-06-26 2019-06-26 Pixel unit circuit, image processing method, storage medium and CMOS image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910563830.8A CN110290334B (en) 2019-06-26 2019-06-26 Pixel unit circuit, image processing method, storage medium and CMOS image sensor

Publications (2)

Publication Number Publication Date
CN110290334A CN110290334A (en) 2019-09-27
CN110290334B true CN110290334B (en) 2021-11-12

Family

ID=68007623

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910563830.8A Active CN110290334B (en) 2019-06-26 2019-06-26 Pixel unit circuit, image processing method, storage medium and CMOS image sensor

Country Status (1)

Country Link
CN (1) CN110290334B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111182247B (en) * 2020-01-06 2022-06-21 Oppo广东移动通信有限公司 Pixel structure, image sensor and terminal
CN111246133A (en) * 2020-01-09 2020-06-05 Oppo广东移动通信有限公司 Image sensor and image processing method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1965414A (en) * 2004-04-05 2007-05-16 日本电气株式会社 Photodiode and method for manufacturing same
CN102569321A (en) * 2008-04-07 2012-07-11 索尼株式会社 Solid-state imaging device and electronic apparatus
CN103259982A (en) * 2012-02-14 2013-08-21 美国微像科技有限公司 High-sensitivity CMOS image sensor and manufacturing method thereof
CN105556680A (en) * 2013-05-22 2016-05-04 王士原 Microstructure enhanced absorption photosensitive devices
CN106454161A (en) * 2015-08-10 2017-02-22 三星电子株式会社 Method for improving image quality of image sensor
CN108257990A (en) * 2016-12-29 2018-07-06 三星电子株式会社 Imaging sensor and the electronic equipment for including it
CN109922286A (en) * 2019-03-21 2019-06-21 思特威(上海)电子科技有限公司 Cmos image sensor and its imaging method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008010292A1 (en) * 2006-07-21 2008-01-24 Renesas Technology Corp. Photoelectric conversion device and imaging device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1965414A (en) * 2004-04-05 2007-05-16 日本电气株式会社 Photodiode and method for manufacturing same
CN102569321A (en) * 2008-04-07 2012-07-11 索尼株式会社 Solid-state imaging device and electronic apparatus
CN103259982A (en) * 2012-02-14 2013-08-21 美国微像科技有限公司 High-sensitivity CMOS image sensor and manufacturing method thereof
CN105556680A (en) * 2013-05-22 2016-05-04 王士原 Microstructure enhanced absorption photosensitive devices
CN106454161A (en) * 2015-08-10 2017-02-22 三星电子株式会社 Method for improving image quality of image sensor
CN108257990A (en) * 2016-12-29 2018-07-06 三星电子株式会社 Imaging sensor and the electronic equipment for including it
CN109922286A (en) * 2019-03-21 2019-06-21 思特威(上海)电子科技有限公司 Cmos image sensor and its imaging method

Also Published As

Publication number Publication date
CN110290334A (en) 2019-09-27

Similar Documents

Publication Publication Date Title
CN108156400B (en) Picture pick-up device and its driving method and photographic device
Gouveia et al. Advances on CMOS image sensors
CN109951660B (en) Pixel structure, CMOS image sensor, image signal processor and terminal
CN110225319B (en) Image sensor, image processing method and storage medium
Janesick et al. Developments and applications of high-performance CCD and CMOS imaging arrays
EP3242479B1 (en) Imaging device and mobile terminal
CN110460781B (en) Image sensor, image processing method and storage medium
CN110290334B (en) Pixel unit circuit, image processing method, storage medium and CMOS image sensor
CN110312088B (en) Pixel unit circuit, image processing method and storage medium
US9160958B2 (en) Method of reading out an image sensor with transfer gate boost
CN110445998B (en) Color polarization CIS, image processing method and storage medium
CN212012776U (en) Imaging system and image sensor for generating color information and pulsed light information
CN110099227B (en) Pixel unit circuit, image processing method and storage medium
CN110740277A (en) Image sensor, electronic device and imaging method
CN109951656B (en) Image sensor and electronic equipment
CN110233980B (en) Active pixel image sensor, image processing method and storage medium
CN110677606B (en) Pixel structure, CIS and terminal
CN110336964B (en) CMOS image sensor, image processing method and storage medium
CN111223882B (en) Image sensor, image processing method and storage medium
CN110475083B (en) Pixel structure, image sensor and terminal
Gouveia et al. On evolution of cmos image sensors
CN110691207A (en) Image sensor, image processing method and storage medium
CN110690237B (en) Image sensor, signal processing method and storage medium
CN114584725A (en) Image sensor and imaging device
CN110418088B (en) Pixel structure, image sensor and terminal

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant