CN108258001A - Imaging sensor and its manufacturing method - Google Patents
Imaging sensor and its manufacturing method Download PDFInfo
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- CN108258001A CN108258001A CN201810075133.3A CN201810075133A CN108258001A CN 108258001 A CN108258001 A CN 108258001A CN 201810075133 A CN201810075133 A CN 201810075133A CN 108258001 A CN108258001 A CN 108258001A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 188
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 238000002955 isolation Methods 0.000 claims abstract description 51
- 239000011810 insulating material Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims description 52
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000000034 method Methods 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000005622 photoelectricity Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Abstract
This disclosure relates to imaging sensor and its manufacturing method.One of embodiment provides a kind of imaging sensor, including：Substrate, is formed with photodiode in the substrate, and the photodiode is made of the first semi-conducting material；And extend to the deep trench isolation portion in the substrate from a main surface of the substrate, the deep trench isolation portion is arranged in around the photodiode, and including at least insulating materials and the second semi-conducting material, each photodiode is isolated in wherein described insulating materials, and the band gap of second semi-conducting material is different from the band gap of first semi-conducting material.
Description
Technical field
This disclosure relates to semiconductor applications, it particularly relates to imaging sensor and its manufacturing method.
Background technology
It in existing imaging sensor, there is dark current, the performance of imaging sensor can be influenced.
Therefore there is the demand for reducing dark current.
Invention content
One purpose of the disclosure is to provide a kind of novel imaging sensor and its manufacturing method.Particularly, the disclosure
A purpose be related to reduce imaging sensor dark current.
According to the disclosure in a first aspect, provide a kind of imaging sensor, including：Substrate, in the substrate shape
Into there is photodiode, the photodiode is made of the first semi-conducting material；An and main surface from the substrate
The deep trench isolation portion in the substrate is extended to, the deep trench isolation portion is arranged in around the photodiode, and extremely
Include insulating materials and the second semi-conducting material less, wherein the insulating materials is isolated each photodiode, described the second half lead
The band gap of body material is different from the band gap of first semi-conducting material.
According to the second aspect of the disclosure, a kind of method for manufacturing imaging sensor is provided, including：By from
One main surface of substrate performs etching the substrate to form deep trench, wherein having been formed with two pole of photoelectricity in the substrate
Pipe, the photodiode are made of the first semi-conducting material, and the deep trench is located at around the photodiode；Filling institute
Deep trench is stated to form deep trench isolation portion, the deep trench isolation portion includes at least insulating materials and the second semi-conducting material,
Each photodiode is isolated in wherein described insulating materials, and the band gap of second semi-conducting material is different from first semiconductor
The band gap of material.
By referring to the drawings to the detailed description of exemplary embodiment of the present invention, other feature of the invention and its
Advantage will become more apparent from.
Description of the drawings
The attached drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
With reference to attached drawing, according to following detailed description, the disclosure can be more clearly understood, wherein：
Fig. 1 shows the sectional view of the imaging sensor according to one exemplary embodiment of the disclosure.
Fig. 2 shows the flow charts of the manufacturing method of the imaging sensor according to the disclosure one exemplary embodiment.
Fig. 3 A-3G are respectively illustrated is manufacturing imaging sensor side according to one exemplary embodiment of the disclosure
Device schematic cross-section at the exemplary each step of method.
Note that in embodiments described below, same reference numeral is used in conjunction between different attached drawings sometimes
Come the part for representing same section or there is identical function, and omit its repeated explanation.In the present specification, using similar mark
Number and letter represent similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. does not indicate that reality sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
It is described in detail the various exemplary embodiments of the disclosure below with reference to accompanying drawings.It should be noted that：Unless in addition have
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the disclosure
And its application or any restrictions that use.That is, imaging sensor and its manufacturing method herein is with illustrative
Mode is shown, to illustrate the different embodiments of the structures and methods in the disclosure.It will be understood by those skilled in the art, however, that
They are merely illustrative the exemplary approach of the present invention that can be used for implementing rather than the mode of limit.In addition, attached drawing need not be by
Ratio is drawn, some features may be amplified the details to show specific component.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
For present inventor by the study found that in existing imaging sensor, part dark current is due to not phase
Caused by the light (for example, infrared light and ultraviolet light) into photodiode for hoping wavelength.Even if employing colour filter,
Can also some infrared lights and ultraviolet light enter photodiode, so as to cause dark current.
In this regard, by further investigation, present inventor proposes a kind of structure of novel imaging sensor,
Being formed in deep trench isolation (Deep Trench Isolation, DTI) structure has the band gap different from photodiode material
Semi-conducting material, may so as to reduce its for absorbing the undesirable light (for example, infrared light and/or ultraviolet light) sensed
Caused dark current.Therefore, dark current can be reduced using the technology of the disclosure.
Herein, term " band gap " refers to the band gap between the conduction band of semi-conducting material and valence band.This field
Technical staff understands that the energy (that is, wavelength) of light of the band gap of semi-conducting material with absorbing is related.
In order to more comprehensively, the present invention is expressly understood, illustrate the novel skill according to the disclosure below in conjunction with attached drawing
Art.
Fig. 1 shows the sectional view of the imaging sensor according to one exemplary embodiment of the disclosure.It should be noted that practical
Imaging sensor be likely present before/other components for subsequently manufacturing, and in order to avoid obscuring the main points of the disclosure, attached drawing does not have
It shows and does not also go that other components are discussed herein.It is primarily upon DTI structures herein.
As shown in Figure 1, imaging sensor includes substrate 101, photodiode PD 102 is formed in the substrate 101.
PD 102 is made of the first semi-conducting material.In some cases, substrate 101 can be simple semiconductor crystal wafer, such as silicon
Wafer, and PD 102 to form suitable N-type region and/or p type island region and formed by being doped to substrate 101, at this point,
Semiconductor material is the material of substrate 101.But the present invention is not intended to limit the structure of PD 102, and in order to avoid obscuring this
The concrete structure of PD 102 is omitted in figure for disclosed main points.In addition, though substrate 101 is drawn for purposes of brevity in figure
Into a simple block substrate, but it is clear that the present invention is not limited thereto.Substrate 101 can be by being suitable for appointing for imaging sensor
What semi-conducting material (Si, SiC, SiGe etc.) is made, such as can be monocrystalline substrate.In some embodiments, it serves as a contrast
The various compound substrates such as bottom 101 or silicon-on-insulator (SOI), silicon germanium on insulator.Those skilled in the art understand
Substrate 101 is not any way limited, but can be selected according to practical application.It can be with shape under the neutralization of substrate 101
Into there is other semiconductor devices components, for example, other components formed in early stage/subsequent processing steps etc..And this hair
The bright type for being not intended to limit imaging sensor, such as preceding illuminated (FSI) and back-illuminated type (BSI) can be applicable in.
In addition, as shown in Figure 1, imaging sensor further includes deep trench isolation portion 103, from a main table of substrate 101
Face is extended in substrate.Deep trench isolation portion 103 is arranged in around PD 102.Those skilled in the art understand, for CMOS
For imaging sensor, several transistors (such as 4 crystalline substances can be also formed usually between PD 102 and deep trench isolation portion 103
Body pipe), a pixel unit is collectively formed with PD 102, and deep trench isolation portion 103 realizes between each pixel unit
Isolation.However, for simplicity, the transistor being not shown in figure in pixel unit, and deep trench isolation portion 103 can also
It is considered as and each PD 102 is isolated.
In addition, three PD and two deep trench isolation portions therebetween for simplicity, in figure are merely illustrated, but ability
Field technique personnel understand that the present invention is not limited thereto.In general, an imaging sensor can include huge number of pixel unit
And the deep trench isolation portion of isolation therebetween.In addition, those skilled in the art are understood that, the present invention is also not limited to Fig. 1
The shape of shown deep trench.
Deep trench isolation portion 103 includes at least 105 and second semi-conducting material 104 of insulating materials, wherein insulating materials 105
Each PD 102 is isolated, the band gap of the second semi-conducting material 104 is different from the band gap of the first semi-conducting material of PD 102, for inhaling
Receive and treat the light for the light different wave length that PD 102 is detected.
In some embodiments, the band gap of the second semi-conducting material 104 is less than the band gap of the first semi-conducting material, so that
Infrared light can be absorbed by obtaining the second semi-conducting material 104.For example, the second semi-conducting material includes SiGe or TiO2Etc..
In other embodiments, the band gap of the second semi-conducting material 104 is more than the band gap of the first semi-conducting material, with
The second semi-conducting material 104 is enabled to absorb ultraviolet light.For example, the second semi-conducting material includes the III-V of GaN or GaAs etc
Compound semiconductor etc..
It is not seen in fig. 1, but in some cases, deep trench isolation portion 103 comprises more than 105 He of insulating materials
Second semi-conducting material 104, but between the second semi-conducting material 104 and insulating materials 105 and/or in the second semiconductor material
It can include other materials layer between material 104 and substrate 101.
For example, in some embodiments, deep trench isolation portion 103 can also include third semi-conducting material, wherein the
It is purple with enable absorption to be more than the band gap of the first semi-conducting material for the band gap of one in two semi-conducting materials and third semi-conducting material
Outer light, and the band gap of another one is less than the band gap of the first semi-conducting material and absorbs infrared light with enable.Preferably, implement at some
In mode, deep trench isolation portion 103 can also include laying and high dielectric constant material layer, wherein the laying, described
High dielectric constant material layer, second semi-conducting material, the third semi-conducting material and the insulating materials stack gradually.
That is, sequentially formed in the deep trench for the deep trench isolation portion 103 laying, the high dielectric constant material layer,
Second semi-conducting material, the third semi-conducting material and the insulating materials.Laying can include oxide, such as
Silica, for repairing the surface damage of deep trench (being brought when typically etching deep trench), and convenient for the shape of succeeding layer
Into.High dielectric constant material layer can include HfO or AlO etc., for improving photoelectric current of photodiode etc..
In some embodiments, the second semi-conducting material in deep trench isolation portion 103 or third semi-conducting material be also
It extends in the main surface of substrate 101, that is, extend on PD 102.The semi-conducting material being preferably located on PD 102
Band gap be more than the first semi-conducting material band gap.If the band gap of the semi-conducting material is less than the band of the first semi-conducting material
Gap, then may absorb should be by the light (for example, visible ray) that PD 102 is sensed, so as to influence the performance of PD 102.
In some embodiments, for example, in the case of some back side illumination image sensors, the master of above-mentioned substrate 101
Surface is the back side of substrate 101, that is, forms the deep trench isolation portion 103 from substrate back.Depth is formed compared to from substrate face
The situation in trench isolations portion 103, this can be to avoid bringing too macrolesion so that influencing PD or other transistors to substrate face
Performance.Usually each PD can be isolated with shallow trench isolation (STI) portion in substrate face.
Herein, " main surface " of substrate means two vertical with thickness direction of the substrate (for example, Silicon Wafer)
Major surfaces." front " of substrate refers to being formed that main surface of transistor and metal interconnecting layer thereon, and " the back of the body of substrate
Face " is that main surface contrary to the positive.
Fig. 2 shows the flow charts of the method for making image sensor 200 according to the disclosure one exemplary embodiment.On
Face content described in conjunction with Figure 1 is readily applicable to corresponding feature, may repeat no more below.
Specifically, as shown in Fig. 2, at step 210, by being carved from a main surface of substrate to the substrate
It loses to form deep trench, wherein having been formed with photodiode in the substrate, the photodiode is by the first semiconductor material
Material is formed, and the deep trench is located at around the photodiode.
In some embodiments, the main surface of the substrate is the back side of the substrate.
At step 220, the deep trench is filled to form deep trench isolation portion, the deep trench isolation portion includes at least
Insulating materials and the second semi-conducting material, wherein each photodiode, second semi-conducting material is isolated in the insulating materials
Band gap be different from first semi-conducting material band gap.
In some embodiments, the step of forming deep trench isolation portion includes：Conformally deposit one layer described the second half
Conductor material；The insulating materials is deposited on second semi-conducting material so that filling up the deep trench；And removal position
In second semi-conducting material in the main surface of the substrate and the insulating materials.
In some embodiments, the step of forming deep trench isolation portion includes：Conformally deposit one layer described the second half
Conductor material；The insulating materials is deposited on second semi-conducting material so that filling up the deep trench；And removal position
The insulating materials in the main surface of the substrate, and retain second semiconductor being located in the main surface
Material, wherein the band gap of second semi-conducting material is more than the band gap of first semi-conducting material.
In some embodiments, the band gap of second semi-conducting material is less than the band of first semi-conducting material
Gap, so that second semi-conducting material can absorb infrared light.For example, second semi-conducting material include SiGe or
TiO2。
In some embodiments, the band gap of second semi-conducting material is more than the band of first semi-conducting material
Gap, so that second semi-conducting material can absorb ultraviolet light.For example, second semi-conducting material include as GaN or
The Group III-V compound semiconductor of GaAs etc.
In some embodiments, the deep trench isolation portion further includes third semi-conducting material, wherein described the second half
The band gap of one is inhaled more than the band gap of first semi-conducting material with enable in conductor material and the third semi-conducting material
Ultraviolet light is received, and the band gap of another one is less than the band gap of first semi-conducting material and absorbs infrared light with enable.
In some embodiments, the step of forming deep trench isolation portion further includes：Before the insulating materials is deposited,
One layer of third semi-conducting material is conformally deposited on second semi-conducting material, wherein second semi-conducting material and institute
The band gap for stating one in third semi-conducting material absorbs ultraviolet light more than the band gap of first semi-conducting material with enable, and another
The band gap of one is less than the band gap of first semi-conducting material and absorbs infrared light with enable.Preferably, it is partly led in the third
In the case that the band gap of body material is less than the band gap of first semi-conducting material, removal is positioned at the main surface of the substrate
On the third semi-conducting material.
In some embodiments, the step of forming deep trench isolation portion further includes：Depositing the second semiconductor material
Before material, laying and high dielectric constant material layer are sequentially formed on the entire wall of the deep trench.
In order to more complete and comprehensive understand the present invention, will be described in detail by taking Fig. 3 A-3G as an example according to the disclosure one below
One specific example of the method for making image sensor of a exemplary embodiment.This example is schemed especially suitable for back-illuminated type CMOS
As sensor, the substrate back after being thinned forms deep trench isolation structure.It note that this example is not intended composition pair
The limitation of the present invention.For example, the present invention is not limited in the concrete structure of the imaging sensor shown by Fig. 3 A-3G, but it is right
All imaging sensors for having same requirements or design consideration are all suitable for.It can also be fitted above in conjunction with the described contents of Fig. 1-2
For corresponding feature.
Fig. 3 A-3G respectively illustrate the device schematic cross-section at the exemplary each step of this method.
At Fig. 3 A, usually photoelectricity is formd by processing such as ion implantings in the substrate 101 from the front of substrate 101
Diode PD 102, and the various processing of substrate face are completed, and substrate back is thinned.Therefore, PD 102
It is made of the first semi-conducting material that substrate 101 includes.Then, substrate 101 is performed etching from the back side of substrate 101, so as to
Deep trench 106 is formd around PD 102.By various conventional means the deep trench can be formed to etch.As previously mentioned,
The structure of substrate 101 and PD 102 is not any way limited, but can be selected according to practical application.
At Fig. 3 B, by thermal oxide or deposition processes etc., (including depth on the surface of all exposures of substrate 101
On the entire wall of groove 106) laying 107 is formed as buffer layer.Laying 107 can be including silica etc., for repairing
The damage that the etching processing of back is brought avoids mismatch of the material of substrate and subsequent deposition etc..
At Fig. 3 C, by processing such as chemical vapor depositions (CVD), it is normal that high dielectric is conformally deposited on laying 107
Number (High-K) material layer 108.The high dielectric constant material layer 108 can include HfO or AlO etc., for improving two pole of photoelectricity
Photoelectric current of pipe etc..
At Fig. 3 D, one layer of second semi-conducting material 104 is conformally deposited on high dielectric constant material layer 108, this
The band gap of two semi-conducting materials 104 is more than the band gap of the first semi-conducting material and absorbs ultraviolet light with enable.Second semi-conducting material
104 can include as Group III-V compound semiconductor of GaN or GaAs etc etc..
At Fig. 3 E, one layer of third semi-conducting material 109 is conformally deposited on the second semi-conducting material 104, wherein the
The band gap of three semi-conducting materials 109 is less than the band gap of the first semi-conducting material and absorbs infrared light with enable.For example, third semiconductor
Material 109 can include SiGe or TiO2Deng.
Then, at Fig. 3 F, deposition of insulative material 105 (such as silica, the silicon nitride on third semi-conducting material 109
Deng), to fill up deep trench 106.
Then, at Fig. 3 G, (etch back) processing etc. is carved using for example chemically-mechanicapolish polishing (CMP) or returning, removes position
In insulating materials 105 and third semi-conducting material 109 on the back side of substrate 101, and remain the second half on the back side
Conductor material 104, high dielectric constant material layer 108 and laying 107.Retain the second semi-conducting material 104 being located on the back side
Ultraviolet light can be more absorbed, so as to further reduce dark current.And remove the third semi-conducting material 109 being located on the back side
It, to avoid its absorption to visible ray, can avoid influencing the performance of PD.
Alternatively, as needed, the second semi-conducting material 104, Gao Jie on the back side can also further be removed
Dielectric constant material 108 and/or laying 107.
As shown in Figure 3 G, finally filling forms deep trench isolation portion 103 in deep trench 106, including from bottom to top
Laying 107, high dielectric constant material layer 108, the second semi-conducting material 104,109 and of third semi-conducting material stacked gradually
Insulating materials 105.Certainly, those skilled in the art understand, for the present invention, laying 107 and high-k material
The bed of material 108 is not required, but can be formed as needed.For the second semi-conducting material 104 and third semiconductor material
Material 109 and one or both of which can be formed as needed or can form other the half of more different band gap
Conductor material layer.
Word "front", "rear", " top ", " bottom " in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can in this institute
Those of description show or other are orientated in other different orientations and operate.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other realization methods in the arbitrary realization method of this exemplary description
Preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technology, invention content or specific embodiment
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " mean comprising by design or manufacture the defects of, device or element appearance
Arbitrary small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in practical realization method with perfect or ideal situation
Between difference.
In addition, just to the purpose of reference, can with the similar terms such as " first " used herein, " second ", and
And it thus is not intended to limit.For example, unless clearly indicated by the context, be otherwise related to structure or element word " first ", "
Two " do not imply order or sequence with other such digital words.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or combination thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering obtain object all modes
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembling ", and/or " order " object etc..
Foregoing description can indicate to be " connected " or " coupling " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature with another element/node/feature in electricity
Above, it is directly connected mechanically, in logic or in other ways (or direct communication).Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection indirectly of element or other feature, including profit
With the connection of one or more intermediary elements.
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
Single operation can be combined into, single operation can be distributed in additional operation, and operate can at least portion in time
Divide and overlappingly perform.Moreover, alternative embodiment can include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the present disclosure can also include the example below：
1st, a kind of imaging sensor, which is characterized in that including：
Substrate, is formed with photodiode in the substrate, and the photodiode is made of the first semi-conducting material；
And
The deep trench isolation portion in the substrate, the deep trench isolation portion are extended to from a main surface of the substrate
It is arranged in around the photodiode, and including at least insulating materials and the second semi-conducting material, wherein the insulating materials
Each photodiode is isolated, the band gap of second semi-conducting material is different from the band gap of first semi-conducting material.
2nd, the imaging sensor according to 1, which is characterized in that the band gap of second semi-conducting material is less than described the
The band gap of semiconductor material, so that second semi-conducting material can absorb infrared light.
3rd, the imaging sensor according to 1, which is characterized in that the band gap of second semi-conducting material is more than described the
The band gap of semiconductor material, so that second semi-conducting material can absorb ultraviolet light.
4th, the imaging sensor according to 1, which is characterized in that the deep trench isolation portion further includes third semiconductor material
Material, wherein the band gap of one is more than the first semiconductor material in second semi-conducting material and the third semi-conducting material
The band gap of material absorbs ultraviolet light with enable, and the band gap that the band gap of another one is less than first semi-conducting material is absorbed with enable
Infrared light.
5th, the imaging sensor according to 2 or 4, which is characterized in that second semi-conducting material include SiGe or
TiO2。
6th, the imaging sensor according to 3 or 4, which is characterized in that second semi-conducting material includes iii-v
Close object semiconductor.
7th, the imaging sensor according to 3 or 4, which is characterized in that second semi-conducting material include GaN or
GaAs。
8th, the imaging sensor according to 1, which is characterized in that further include in the main surface of the substrate
Second semi-conducting material or third semi-conducting material, wherein the band of second semi-conducting material and the third semi-conducting material
Gap is both greater than the band gap of first semi-conducting material.
9th, the imaging sensor according to 4, which is characterized in that the deep trench isolation portion further includes laying and Gao Jie
Dielectric constant material, wherein the laying, the high dielectric constant material layer, second semi-conducting material, the third
Semi-conducting material and the insulating materials stack gradually.
10th, the imaging sensor according to 1, which is characterized in that the main surface of the substrate is the substrate
The back side.
11st, a kind of method for manufacturing imaging sensor, which is characterized in that including：
By performing etching to form deep trench to the substrate from a main surface of substrate, wherein in the substrate
Photodiode is formed with, the photodiode is made of the first semi-conducting material, and the deep trench is located at the photoelectricity two
Around pole pipe；
The deep trench is filled to form deep trench isolation portion, the deep trench isolation portion includes at least insulating materials and the
Two semi-conducting materials, wherein each photodiode is isolated in the insulating materials, the band gap of second semi-conducting material is different from
The band gap of first semi-conducting material.
12nd, the method according to 11, which is characterized in that the step of forming deep trench isolation portion includes：
Conformally deposit one layer of second semi-conducting material；
The insulating materials is deposited on second semi-conducting material so that filling up the deep trench；And
Second semi-conducting material and the insulating materials of the removal in the main surface of the substrate.
13rd, the method according to 11, which is characterized in that the step of forming deep trench isolation portion includes：
Conformally deposit one layer of second semi-conducting material；
The insulating materials is deposited on second semi-conducting material so that filling up the deep trench；And
The insulating materials of the removal in the main surface of the substrate, and retain and be located in the main surface
Second semi-conducting material, wherein the band gap of second semi-conducting material is more than the band gap of first semi-conducting material.
14th, the method according to any one of 11-12, which is characterized in that the band gap of second semi-conducting material
Less than the band gap of first semi-conducting material, so that second semi-conducting material can absorb infrared light.
15th, the method according to any one of 11-13, which is characterized in that the band gap of second semi-conducting material
More than the band gap of first semi-conducting material, so that second semi-conducting material can absorb ultraviolet light.
16th, the method according to 11, which is characterized in that the deep trench isolation portion further includes third semi-conducting material,
The band gap of one is more than first semi-conducting material in wherein described second semi-conducting material and the third semi-conducting material
Band gap with enable absorb ultraviolet light, and the band gap of another one be less than first semi-conducting material band gap with enable absorb it is red
Outer light.
17th, the method according to any one of 12-13, which is characterized in that the step of forming deep trench isolation portion is also
Including：
Before the insulating materials is deposited, one layer of third semiconductor is conformally deposited on second semi-conducting material
Material, wherein the band gap of one is more than first semiconductor in second semi-conducting material and the third semi-conducting material
The band gap of material absorbs ultraviolet light with enable, and the band gap that the band gap of another one is less than first semi-conducting material is inhaled with enable
Receive infrared light.
18th, the method according to 17, which is characterized in that the step of forming deep trench isolation portion further includes：
In the case where the band gap of the third semi-conducting material is less than the band gap of first semi-conducting material, position is removed
In the third semi-conducting material in the main surface of the substrate.
19th, the method according to 14, which is characterized in that second semi-conducting material includes SiGe or TiO2.
20th, the method according to 15, which is characterized in that second semi-conducting material includes III-V compound half
Conductor.
21st, the method according to 15, which is characterized in that second semi-conducting material includes GaN or GaAs.
22nd, the method according to any one of 12-13, which is characterized in that the step of forming deep trench isolation portion is also
Including：
Before second semi-conducting material is deposited, laying and height are sequentially formed on the entire wall of the deep trench
Dielectric constant material layer.
23rd, the method according to 11, which is characterized in that the main surface of the substrate is the back side of the substrate.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this field
Art personnel it should be understood that above example merely to illustrating rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out to embodiment without departing from the scope and spirit of the disclosure.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of imaging sensor, which is characterized in that including：
Substrate, is formed with photodiode in the substrate, and the photodiode is made of the first semi-conducting material；And
The deep trench isolation portion in the substrate, the deep trench isolation portion arrangement are extended to from a main surface of the substrate
Around the photodiode, and including at least insulating materials and the second semi-conducting material, wherein the insulating materials is isolated
Each photodiode, the band gap of second semi-conducting material are different from the band gap of first semi-conducting material.
2. imaging sensor according to claim 1, which is characterized in that the band gap of second semi-conducting material is less than institute
The band gap of the first semi-conducting material is stated, so that second semi-conducting material can absorb infrared light.
3. imaging sensor according to claim 1, which is characterized in that the band gap of second semi-conducting material is more than institute
The band gap of the first semi-conducting material is stated, so that second semi-conducting material can absorb ultraviolet light.
4. imaging sensor according to claim 1, which is characterized in that the deep trench isolation portion further includes third and partly leads
Body material, wherein the band gap of one is more than described the first half and leads in second semi-conducting material and the third semi-conducting material
The band gap of body material absorbs ultraviolet light with enable, and the band gap of another one is less than the band gap of first semi-conducting material with enable
Absorb infrared light.
5. the imaging sensor according to claim 2 or 4, which is characterized in that second semi-conducting material includes SiGe
Or TiO2。
6. imaging sensor according to claim 3 or 4, which is characterized in that second semi-conducting material includes III-V
Compound semiconductor.
7. imaging sensor according to claim 3 or 4, which is characterized in that second semi-conducting material include GaN or
GaAs。
8. imaging sensor according to claim 1, which is characterized in that further include the main surface positioned at the substrate
On the second semi-conducting material or third semi-conducting material, wherein second semi-conducting material and the third semi-conducting material
Band gap be both greater than the band gap of first semi-conducting material.
9. imaging sensor according to claim 4, which is characterized in that the deep trench isolation portion further include laying and
High dielectric constant material layer, wherein the laying, the high dielectric constant material layer, second semi-conducting material, described
Third semi-conducting material and the insulating materials stack gradually.
10. imaging sensor according to claim 1, which is characterized in that the main surface of the substrate is the lining
The back side at bottom.
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