CN107195649B - Back-illuminated cmos image sensors and its manufacturing method - Google Patents
Back-illuminated cmos image sensors and its manufacturing method Download PDFInfo
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- CN107195649B CN107195649B CN201710419611.3A CN201710419611A CN107195649B CN 107195649 B CN107195649 B CN 107195649B CN 201710419611 A CN201710419611 A CN 201710419611A CN 107195649 B CN107195649 B CN 107195649B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 127
- 239000002184 metal Substances 0.000 claims abstract description 127
- 238000002955 isolation Methods 0.000 claims abstract description 106
- 239000010410 layer Substances 0.000 claims description 181
- 239000007769 metal material Substances 0.000 claims description 66
- 239000003989 dielectric material Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- INIGCWGJTZDVRY-UHFFFAOYSA-N hafnium zirconium Chemical compound [Zr].[Hf] INIGCWGJTZDVRY-UHFFFAOYSA-N 0.000 description 2
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910015801 BaSrTiO Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910020654 PbScTaO Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- UQERHEJYDKMZJQ-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].O.[Sc+3].[Ta+5] Chemical compound [O-2].[O-2].[O-2].[O-2].O.[Sc+3].[Ta+5] UQERHEJYDKMZJQ-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- RFBRDHGMLHXGOB-UHFFFAOYSA-N [Si].[Zr].[Hf] Chemical compound [Si].[Zr].[Hf] RFBRDHGMLHXGOB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000035479 physiological effects, processes and functions Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- PWYYWQHXAPXYMF-UHFFFAOYSA-N strontium(2+) Chemical compound [Sr+2] PWYYWQHXAPXYMF-UHFFFAOYSA-N 0.000 description 1
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention provides a kind of back-illuminated cmos image sensors and its manufacturing methods, can form the structures such as pad by the use of four light shields, reduce the use of light shield；Further, metal grill is formed by connect with the pad, it includes the third metal wire of the first metal wire positioned at first isolation channel, the second metal wire positioned at second isolation channel and the connection pad, the first metal wire and the second metal wire, it can be good at limiting incident light by the metal grill, crosstalk is avoided the occurrence of, the quality of back-illuminated cmos image sensors is improved.Further, negative pressure is applied on the pad, thus negative pressure is also applied on the metal grill connecting with the pad, namely the first isolation structure formed in first isolation channel and it is applied with negative pressure on the second isolation structure formed in second isolation channel, the generation of noise and dark current can be inhibited by applying negative pressure on first isolation structure and second isolation structure.
Description
Technical field
The present invention relates to imaging sensor manufacturing technology field, in particular to a kind of back-illuminated cmos image sensors and its
Manufacturing method.
Background technique
Imaging sensor is grown up on the basis of photoelectric technology, and so-called imaging sensor is to experience light
It learns image information and converts thereof into the sensor of exportable signal.The visual range of human eye can be improved in imaging sensor, makes
It is seen that the naked eyes microcosmos and macrocosm that can not see, it is seen that people temporarily can not the generation of the place of arrival thing, see
To various physics, the chemical change process for exceeding naked eyes visual range, life, physiology, occurrence and development process of lesion, etc..
Visual picture sensor plays the role of very important in the culture of people, sport, production, life and scientific research.It can be with
It says, modern humans' activity can not leave imaging sensor.
Imaging sensor can divide into charge coupled device (Charge-Coupled according to the principle that it is used
Device) imaging sensor (that is, being commonly called as ccd image sensor) and CMOS (Complementary Metal Oxide
Semiconductor) imaging sensor, wherein cmos image sensor is based on CMOS complementary metal-oxide-semiconductor (CMOS) skill
Art and manufacture.Since cmos image sensor is made of traditional cmos circuit technique, can by imaging sensor with
And its required peripheral circuit is integrated, so that cmos image sensor has wider array of application prospect.
According to receive light position difference, cmos image sensor can be divided into cmos image sensor front-illuminated and
Back-illuminated cmos image sensors, wherein back-illuminated cmos image sensors are maximum compared with cmos image sensor front-illuminated
Optimization in place of be exactly to change the structure inside element, i.e., the element input path of photosensitive layer is turned into direction, allows light
It can enter from back side direct projection, avoid in CMOS image sensor structure front-illuminated, light will receive lenticule and photoelectricity two
The influence of structure and thickness between pole pipe, improves the efficiency of light receiver.
But in the back-illuminated cmos image sensors of the prior art, still needed to after pixel wafer and logic wafer bonding
It will be using multiple light shields (it is generally necessary to using six light shields) to form the structures such as metal pad, to obtain back-illuminated type CMOS figure
As sensor.The use of light shield how to be reduced to reduce manufacturing cost, needs to solve all the time at those skilled in the art
A problem.Meanwhile more and more back-illuminated type CMOS imaging sensors reduce optical path crosstalk using deep trench isolation, but
It is to introduce new deep trench isolation processing procedure, defective workmanship can be introduced, will increase noise and dark current on the contrary.How in new process
Noise and dark current are reduced also at problem to be solved.
Summary of the invention
The purpose of the present invention is to provide a kind of back-illuminated cmos image sensors and its manufacturing methods, to solve existing skill
There is still a need for use multiple light shields to form the isostructural problem of metal pad after pixel wafer and logic wafer bonding in art.
In order to solve the above technical problems, the present invention provides a kind of manufacturing method of back-illuminated cmos image sensors, it is described
The manufacturing method of back-illuminated cmos image sensors includes:
The logic wafer and pixel wafer being bonded together are provided；
Using first light shield, to form pad area, the first isolation channel and the second isolation at the back side of the pixel wafer
Slot；
Form layer of dielectric material, the layer of dielectric material cover the pad area, first isolation channel, described second every
The back side from slot and the pixel wafer；
Using second light shield, to expose metal layer in the pad area；
Metal material layer is formed, the metal material layer covers the metal layer, the pad area, first isolation
The back side of slot, second isolation channel and the pixel wafer；
Using third light shield, to form pad in the pad area, the pad is connect with the metal layer；
Using the 4th light shield, to form metal grill, the metal grill is connect with the pad, the metal grill
The first metal wire, the second metal wire positioned at second isolation channel and the connection weldering including being located at first isolation channel
The third metal wire of disk, first metal wire and second metal wire.
Optionally, in the manufacturing method of the back-illuminated cmos image sensors, the layer of dielectric material is single layer
Structure or multi-layer laminate structure.
Optionally, in the manufacturing method of the back-illuminated cmos image sensors, the layer of dielectric material includes high K
Dielectric layer and the buffer layer being formed in the high-K dielectric layer.
Optionally, in the manufacturing method of the back-illuminated cmos image sensors, the metal material layer includes the
One metal material layer and the second metal material layer being formed on first metal material layer, first metal material layer
Material is tungsten.
Optionally, in the manufacturing method of the back-illuminated cmos image sensors, second metal material layer
Material is aluminium or copper.
Optionally, in the manufacturing method of the back-illuminated cmos image sensors, using third light shield, in institute
Stating pad area formation pad includes:
The mask layer for third light shield is formed, the mask layer for third light shield covers the metal material
Layer；
By the third light shield, the patterned mask layer for third light shield, the patterned use are formed
In the mask layer of third light shield expose first isolation channel, second isolation channel, the pixel wafer the back side and
The metal material layer of the part pad area；
Remove second metal material layer in the metal material layer exposed, the first metal described in exposed portion
Material layer, to form the pad, the pad includes part first metal material layer and remaining second metal
Material layer.
Optionally, in the manufacturing method of the back-illuminated cmos image sensors, using the 4th light shield, to be formed
Metal grill includes:
The mask layer for being used for the 4th light shield is formed, the mask layer for being used for the 4th light shield covers the pad and dew
First metal material layer out；
By the 4th light shield, the patterned mask layer for being used for the 4th light shield, the patterned use are formed
First metal material layer at the back side of the part pixel wafer is exposed in the mask layer of the 4th light shield；
First metal material layer exposed is removed, to form the metal grill.
Optionally, in the manufacturing method of the back back-illuminated cmos image sensors, the back-illuminated type cmos image
The manufacturing method of sensor further include: form lenticule in the metal grill.
Optionally, in the manufacturing method of the back back-illuminated cmos image sensors, the back-illuminated type cmos image
The manufacturing method of sensor further include: negative pressure is applied to the pad.
The present invention also provides a kind of back-illuminated cmos image sensors, the back-illuminated cmos image sensors include:
The logic wafer and pixel wafer being bonded together；
The back side of the pixel wafer is formed with pad area, the first isolation channel and the second isolation channel；
Layer of dielectric material, the layer of dielectric material cover the pad area, first isolation channel, second isolation channel
And the back side of the pixel wafer；
Pad, the pad are located at the pad area, and the pad is connect with the metal layer in the pixel wafer, described
Negative pressure is applied on pad；
Metal grill, the metal grill are connect with the pad, and the metal grill includes being located at first isolation
First metal wire of slot, the second metal wire positioned at second isolation channel and the connection pad, connection first metal
The third metal wire of line and second metal wire.
In back-illuminated cmos image sensors provided by the invention and its manufacturing method, the use by four light shields is
The structures such as pad can be formed, the use of light shield is reduced；Further, being formed by back-illuminated cmos image sensors includes
Metal grill, the metal grill are connect with the pad, and the metal grill includes positioned at the first of first isolation channel
Metal wire, the second metal wire positioned at second isolation channel and the connection pad, first metal wire and described second
The third metal wire of metal wire can be good at limiting incident light by the metal grill, avoid the occurrence of crosstalk, improves
The quality of back-illuminated cmos image sensors.Further, it is applied with negative pressure on the pad, thus connected with the pad
Also negative pressure is applied on the metal grill connect, namely the first isolation structure for being formed in first isolation channel and described
It is applied with negative pressure on the second isolation structure formed in two isolation channels, by first isolation structure and second isolation
The generation of noise and dark current can be inhibited by applying negative pressure in structure.
Detailed description of the invention
Fig. 1 is the flow diagram of the manufacturing method of the back-illuminated cmos image sensors of the embodiment of the present invention；
Fig. 2 is the diagrammatic cross-section of the logic wafer being bonded together and pixel wafer that provide in the embodiment of the present invention；
Fig. 3 is in the embodiment of the present invention using the diagrammatic cross-section of the structure obtained after first light shield；
Fig. 4 is the diagrammatic cross-section that the structure obtained after layer of dielectric material is formed in the embodiment of the present invention；
Fig. 5 is in the embodiment of the present invention using the diagrammatic cross-section of the structure obtained after second light shield；
Fig. 6 is the diagrammatic cross-section that the structure obtained after metal material layer is formed in the embodiment of the present invention；
Fig. 7 is in the embodiment of the present invention using the diagrammatic cross-section of the structure obtained after third light shield；
Fig. 8 is in the embodiment of the present invention using the diagrammatic cross-section of the structure obtained after chapter 4 light shield.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to back-illuminated cmos image sensors proposed by the present invention and its manufacturer
Method is described in further detail.According to following explanation and claims, advantages and features of the invention will be become apparent from.It needs to illustrate
, attached drawing is all made of very simplified form and using non-accurate ratio, only conveniently, lucidly to aid in illustrating originally
The purpose of inventive embodiments.
Firstly, referring to FIG. 1, it is the process of the manufacturing method of the back-illuminated cmos image sensors of the embodiment of the present invention
Schematic diagram.As shown in Figure 1, the manufacturing method of the back-illuminated cmos image sensors includes:
Step S10: the logic wafer and pixel wafer being bonded together are provided；
Step S11: use first light shield, with the back side of the pixel wafer formed pad area, the first isolation channel and
Second isolation channel；
Step S12: forming layer of dielectric material, and the layer of dielectric material covers the pad area, first isolation channel, institute
State the back side of the second isolation channel and the pixel wafer；
Step S13: second light shield is used, to expose metal layer in the pad area；
Step S14: forming metal material layer, and the metal material layer covers the metal layer, the pad area, described the
The back side of one isolation channel, second isolation channel and the pixel wafer；
Step S15: using third light shield, to form pad in the pad area, the pad and the metal layer connect
It connects；
Step S16: the 4th light shield is used, to form metal grill, the metal grill is connect with the pad, described
Metal grill includes the first metal wire, the second metal wire positioned at second isolation channel and the company positioned at first isolation channel
Connect the third metal wire of the pad, first metal wire and second metal wire.
Subsequently, Fig. 2 to Fig. 8 is please referred to, the embodiment of the present application will combine the section for completing to obtain after different step to illustrate
Figure is further described.
Firstly, referring to FIG. 2, provide semiconductor structure 10, specifically, provide the logic wafer that is bonded together and
Pixel wafer.Wherein, the logic wafer may include the first substrate and be formed in first substrate and/or be formed in institute
State the logic circuit on the first substrate；The pixel wafer may include the second substrate and be formed in second substrate neutralize/
Or it is formed in the structures such as photodiode and metal layer on second substrate, wherein the metal layer specifically can wrap
Include the structure of the metal materials such as metal interconnecting wires and metal contact hole.Further, the logic wafer and the pixel are brilliant
After bonding, technique for thinning back side can also be performed in the pixel wafer to circle.
Then, referring to FIG. 3, in the embodiment of the present application, using first light shield, at the back side of the pixel wafer
Form pad area 21, the first isolation channel 22 and the second isolation channel 23.I.e. here, by a light shield, in the pixel wafer
The back side at least forms three kinds of structures, respectively pad area 21, the first isolation channel 22 and the second isolation channel 23.Implement in the application
In example, first isolation channel 22 and second isolation channel 23 are used to form isolation structure, mainly there is shape between the two
On difference, specifically, the depth and/or cross-sectional width of first isolation channel 22 and second isolation channel 23 can not phases
Together.
Wherein, using first light shield, to form pad area 21,22 and of the first isolation channel at the back side of the pixel wafer
Second isolation channel 23 can specifically include: form the first mask layer at the back side of the pixel wafer；Using first light shield pair
First mask layer executes photoetching process, to form patterned first mask layer (i.e. described patterned first mask layer
Expose the surface that the pixel wafer needs to form the region of pad area 21, the first isolation channel 22 and the second isolation channel 23)；It is right
The pixel wafer executes etching technics, to form pad area 21,22 and of the first isolation channel at the back side of the pixel wafer
Second isolation channel 23；Remove patterned first mask layer.
Then, referring to FIG. 4, forming layer of dielectric material 24, the layer of dielectric material 24 covers the pad area 21, described
First isolation channel 22, second isolation channel 23 and the pixel wafer the back side (such as it is two adjacent it is described second isolation
The surface of semiconductor structure 10 between slot 23, for another example half between first isolation channel 22 and second isolation channel 23
The surface of conductor structure 10, the also table such as the semiconductor structure 10 between first isolation channel 22 and the pad area 21
Face).
Specifically, the layer of dielectric material 24 can be single layer structure or multi-layer laminate structure.In the embodiment of the present application
In, the layer of dielectric material 24 is multi-layer laminate structure, specifically includes high-K dielectric layer and is formed in the high-K dielectric layer
Buffer layer, the resulting isolation structure has splendid isolation effect as a result,.Specifically, the material of the high-K dielectric layer
It can be hafnium oxide (HfO2), oxynitriding hafnium (HfON), hafnium silicate (HfSiO), hafnium silicon oxynitide (HfSiON), zirconium oxide
(ZrO2), zirconium oxynitride (ZrON), zirconium silicate (ZrSiO), zirconium oxynitride silicon (ZrSiON), hafnium oxide zirconium (HfZrO2), oxygen nitrogen
Change hafnium zirconium (HfZrON), hafnium silicate zirconium (HfZrSiO), oxynitriding hafnium zirconium silicon (HfZrSiON), aluminium oxide (Al2O3), titanium oxide
(TiO2), lanthana (La2O3), lanthanum aluminum oxide (LaAlO3), cerium oxide (CeO2), yttrium oxide (Y2O3), strontium barium oxide titanium
Object (BaSrTiO), barium titanium oxide (BaTiO), strontium titanium oxide (SrTiO3), lead scandium tantalum pentoxide (PbScTaO) etc. or
Combination more than both.The material of the buffer layer can for silica, silicon nitride or silicon oxynitride etc. or they
More than two combinations.
In the embodiment of the present application, since the layer of dielectric material 24 covers first isolation channel 22 and described second
Isolation channel 23, it will also be appreciated that covering first isolation channel 22 by the layer of dielectric material 24 forms the first isolation
Structure covers second isolation channel 23 by the layer of dielectric material 24 and forms the second isolation structure.
Then, referring to FIG. 5, using second light shield, to expose metal layer 25 in the pad area 21.In the application
In embodiment, the metal layer 25 can specifically include the structure of the metal materials such as metal interconnecting wires and metal contact hole.Into
One step, the metal layer 25 can be single layer structure, be also possible to multi-layer laminate structure；Its material can selected from aluminium, copper,
One of materials such as nickel, tungsten are a variety of.
Wherein, it using second light shield, can specifically include with exposing metal layer 25 in the pad area 21: forming the
Two mask layers, second mask layer cover the layer of dielectric material 24；Second mask layer is held using second light shield
Row photoetching process, to form patterned second mask layer, (i.e. described patterned second mask layer exposes part and is given an account of
The material bed of material 24)；Pixel wafer (namely semiconductor structure 10) to the layer of dielectric material 24 exposed and under it
Etching technics is executed, to expose metal layer 24；Remove patterned second mask layer.
In the embodiment of the present application, then, referring to FIG. 6, forming metal material layer 26, the metal material layer 26 is covered
The metal layer 25, the pad area 21, first isolation channel 22, second isolation channel 23 and the pixel wafer back
Face.That is, the metal material layer 26 covers (remaining) described layer of dielectric material 24 and (exposing) described metal layer 25.
In the embodiment of the present application, the metal material layer 26 is multi-layer laminate structure, it is preferred that the metal material layer
26 include the first metal material layer 260 and the second metal material layer 261 being formed on first metal material layer 260.More
Good, the material of first metal material layer 260 is tungsten；Further, the material of second metal material layer 261 is aluminium
Or copper.Here, being selected as tungsten by first metal material layer 260, it is ensured that for first isolated groove 22
With the filling quality of second isolated groove 23；Further, tungsten is selected as by first metal material layer 260, it can
To realize that noise inhibits.In the embodiment of the present application, the material of second metal material layer 261 is preferably aluminium or copper, from
And the metal contact of high quality may be implemented.
Then, referring to FIG. 7, using third light shield, to form pad, the pad 27 and institute in the pad area 21
State 26 layers of metal connection.In the embodiment of the present application, the pad 27 is laminated construction, specifically includes (part) first metal material
The bed of material 260 and the second metal material layer 261 being located on described (part) first metal material layer 260.
Wherein, it using third light shield, is specifically included: is formed for third with forming pad 27 in the pad area 21
The mask layer (being herein third mask layer) of light shield, the mask layer (i.e. third mask layer) for third light shield cover
Cover the metal material layer 26；(light is executed to the third mask layer using third light shield by the third light shield
Carving technology), the patterned mask layer (i.e. patterned third mask layer) for third light shield is formed, it is described patterned
Mask layer (i.e. patterned third mask layer) for third light shield expose first isolation channel 22, described second every
From slot 23, the metal material layer of the back side of the pixel wafer and the part pad area 21；Remove the metal exposed
Second metal material layer 261 in material layer 26, the first metal material layer 260 described in exposed portion, to form the weldering
Disk 27, the pad 27 include part first metal material layer 260 and remaining second metal material layer 261.Into
One step, further includes: remove patterned third mask layer.
Then, referring to FIG. 8, using the 4th light shield, to form metal grill 28, the metal grill 28 with it is described
Pad 27 connects, and the metal grill 28 includes positioned at the first metal wire 280 of first isolation channel 22, positioned at described second
The second metal wire 281 and the connection pad 27, first metal wire 280 and second metal wire 281 of isolation channel 23
Third metal wire 282.
Wherein, it using the 4th light shield, is specifically included with forming metal grill 28: forming the exposure mask for being used for the 4th light shield
Layer (being herein the 4th mask layer), the mask layer (i.e. the 4th mask layer) for being used for the 4th light shield covers the pad 27
With first metal material layer 260 of exposing；It (is covered using the 4th light shield to the described 4th by the 4th light shield
Film layer executes photoetching process), form the patterned mask layer (i.e. patterned 4th mask layer) for being used for the 4th light shield, institute
It states the patterned mask layer (i.e. patterned 4th mask layer) for being used for the 4th light shield and exposes the part pixel wafer
First metal material layer 260 at the back side (mainly expose first between two adjacent second isolation channels 23 herein
Metal material layer 260)；First metal material layer 260 exposed is removed, to form the metal grill 28.Further
, further includes: patterned 4th mask layer of removal.
In the embodiment of the present application, the manufacturing method of the back-illuminated cmos image sensors further may also include that
Lenticule (not shown) is formed in the metal grill 28.Here, the lenticule has been filled primarily with described the of removal
The region of one metal material layer 260.It can be good at being isolated by the first metal material layer 260 in second isolation channel 23
Two adjacent lenticules, to reduce crosstalk.
Further, the manufacturing method of the back-illuminated cmos image sensors further include: the pad 27 is applied negative
Pressure.Thus it is also applied with negative pressure on the metal grill 28 connecting with the pad 27, noise can be inhibited by the negative pressure
It generates, to improve the quality for being formed by back-illuminated cmos image sensors.
A back-illuminated cmos image sensors can be obtained by the manufacturing method of above-mentioned back-illuminated cmos image sensors,
Specifically, the back-illuminated cmos image sensors include: the logic wafer and pixel wafer being bonded together；The pixel is brilliant
The round back side is formed with pad area 21, the first isolation channel 22 and the second isolation channel 23；Layer of dielectric material 24, the layer of dielectric material
The back side of the 24 coverings pad area 21, first isolation channel 22, second isolation channel 23 and the pixel wafer；Pad
27, the pad is located at the pad area 21, and the pad 27 is connect with the metal layer 25 in the pixel wafer, the pad
Negative pressure is applied on 27；Metal grill 28, the metal grill 28 are connect with the pad 27, and the metal grill 28 includes
The first metal wire 280 positioned at first isolation channel 22, the second metal wire 281 positioned at second isolation channel 23 and company
Connect the third metal wire 282 of the pad, connection first metal wire 280 and second metal wire 281.
Here, the use by four light shields can form the structures such as pad, the use of light shield is reduced；Further,
Being formed by back-illuminated cmos image sensors includes metal grill, and the metal grill is connect with the pad, the metal
Grid includes the first metal wire positioned at first isolation channel, the second metal wire positioned at second isolation channel and connection institute
The third metal wire for stating pad, first metal wire and second metal wire, can be good at by the metal grill
Incident light is limited, crosstalk is avoided the occurrence of, improves the quality of back-illuminated cmos image sensors.Further, described
Be applied with negative pressure on pad, be also applied with negative pressure on the metal grill thus connecting with the pad, namely described first every
From negative pressure is applied on the first isolation structure formed in slot and the second isolation structure formed in second isolation channel, lead to
The generation of noise and dark current can be inhibited by crossing the application negative pressure on first isolation structure and second isolation structure.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, the present invention
Any change, the modification that the those of ordinary skill in field does according to the disclosure above content, belong to the protection scope of claims.
Claims (10)
1. a kind of manufacturing method of back-illuminated cmos image sensors, which is characterized in that the back-illuminated cmos image sensors
Manufacturing method include:
The logic wafer and pixel wafer being bonded together are provided；
Using first light shield, to form pad area, the first isolation channel and the second isolation channel at the back side of the pixel wafer；
Layer of dielectric material is formed, the layer of dielectric material covers the pad area, first isolation channel, second isolation channel
And the back side of the pixel wafer；
Using second light shield, to expose metal layer in the pad area；
Metal material layer is formed, the metal material layer covers the metal layer, the pad area, first isolation channel, institute
State the back side of the second isolation channel and the pixel wafer；
Using third light shield, to form pad in the pad area, the pad is connect with the metal layer；
Using the 4th light shield, to form metal grill, the metal grill is connect with the pad, and the metal grill includes
The first metal wire positioned at first isolation channel, the second metal wire positioned at second isolation channel and the connection pad,
The third metal wire of first metal wire and second metal wire.
2. the manufacturing method of back-illuminated cmos image sensors as described in claim 1, which is characterized in that the dielectric material
Layer is single layer structure or multi-layer laminate structure.
3. the manufacturing method of back-illuminated cmos image sensors as described in claim 1, which is characterized in that the dielectric material
Layer includes high-K dielectric layer and the buffer layer being formed in the high-K dielectric layer.
4. the manufacturing method of back-illuminated cmos image sensors as described in claim 1, which is characterized in that the metal material
Layer includes the first metal material layer and the second metal material layer being formed on first metal material layer, first metal
The material of material layer is tungsten.
5. the manufacturing method of back-illuminated cmos image sensors as claimed in claim 4, which is characterized in that second metal
The material of material layer is aluminium or copper.
6. the manufacturing method of back-illuminated cmos image sensors as claimed in claim 5, which is characterized in that use third Zhang Guang
Cover, to include: in pad area formation pad
The mask layer for third light shield is formed, the mask layer for third light shield covers the metal material layer；
By the third light shield, the patterned mask layer for third light shield is formed, it is described patterned to be used for the
The mask layer of three light shields exposes the back side and part of first isolation channel, second isolation channel, the pixel wafer
The metal material layer of the pad area；
Remove second metal material layer in the metal material layer exposed, the first metal material described in exposed portion
Layer, to form the pad, the pad includes part first metal material layer and remaining second metal material
Layer.
7. the manufacturing method of back-illuminated cmos image sensors as claimed in claim 6, which is characterized in that use the 4th Zhang Guang
It covers, includes: to form metal grill
The mask layer for being used for the 4th light shield is formed, the mask layer for being used for the 4th light shield covers the pad and exposing
First metal material layer；
By the 4th light shield, the patterned mask layer for being used for the 4th light shield is formed, it is described patterned to be used for the
The mask layer of four light shields exposes first metal material layer at the back side of the part pixel wafer；
First metal material layer exposed is removed, to form the metal grill.
8. such as the manufacturing method of back-illuminated cmos image sensors according to any one of claims 1 to 7, which is characterized in that
The manufacturing method of the back-illuminated cmos image sensors further include: form lenticule in the metal grill.
9. such as the manufacturing method of back-illuminated cmos image sensors according to any one of claims 1 to 7, which is characterized in that
The manufacturing method of the back-illuminated cmos image sensors further include: negative pressure is applied to the pad.
10. a kind of back-illuminated cmos image sensors, which is characterized in that the back-illuminated cmos image sensors include:
The logic wafer and pixel wafer being bonded together；
The back side of the pixel wafer is formed with pad area, the first isolation channel and the second isolation channel；
Layer of dielectric material, the layer of dielectric material cover the pad area, first isolation channel, second isolation channel and institute
State the back side of pixel wafer；
Pad, the pad are located at the pad area, and the pad is connect with the metal layer in the pixel wafer, the pad
On be applied with negative pressure；
Metal grill, the metal grill are connect with the pad, and the metal grill includes being located at first isolation channel
First metal wire, the second metal wire positioned at second isolation channel and the connection pad, connection first metal wire and
The third metal wire of second metal wire.
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| CN108257998A (en) * | 2018-01-23 | 2018-07-06 | 豪威科技(上海)有限公司 | CMOS image sensor and its manufacturing method |
| CN108598098A (en) * | 2018-04-25 | 2018-09-28 | 德淮半导体有限公司 | Back side illumination image sensor and its manufacturing method |
| CN108682678A (en) * | 2018-05-25 | 2018-10-19 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN111863850A (en) * | 2020-07-29 | 2020-10-30 | 上海华力微电子有限公司 | Manufacturing method of deep trench isolation grid structure |
| CN112349740A (en) * | 2020-11-05 | 2021-02-09 | 武汉新芯集成电路制造有限公司 | Backside illuminated image sensor and forming method thereof |
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| CN101383367A (en) * | 2007-09-07 | 2009-03-11 | 东部高科股份有限公司 | Image sensor and method for manufacturing same |
| KR20100080210A (en) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | Image sensor and manufacturing method of image sensor |
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