CN108257895A - The power ageing method and ageing device of semi-conductor power module - Google Patents
The power ageing method and ageing device of semi-conductor power module Download PDFInfo
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- CN108257895A CN108257895A CN201810048428.1A CN201810048428A CN108257895A CN 108257895 A CN108257895 A CN 108257895A CN 201810048428 A CN201810048428 A CN 201810048428A CN 108257895 A CN108257895 A CN 108257895A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 144
- 230000032683 aging Effects 0.000 title claims abstract description 85
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- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 43
- 230000005611 electricity Effects 0.000 claims description 2
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- 238000012545 processing Methods 0.000 abstract description 9
- 238000003483 aging Methods 0.000 description 64
- 239000004020 conductor Substances 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
The embodiment of the present invention provides a kind of the power ageing method and ageing device of semi-conductor power module, and the ageing method includes：Multiple semi-conductor power modules are connected, wherein, the output cathode of the first pole connection power supply of first semi-conductor power module, first pole of other each semi-conductor power modules respectively connects the second pole of previous semi-conductor power module, the output negative pole of the second pole connection power supply of the last one semi-conductor power module, the third pole of each semi-conductor power module connects a drive signal amplification module correspondingly, each drive signal amplification module connects an isolated power supply correspondingly, each drive signal amplification module is also connected to same signal generating circuit；The drive signal that signal generating circuit generates driving semi-conductor power module after the amplification of drive signal amplification module presses setting means turn-on and turn-off；When semi-conductor power module is connected, the semi-conductor power module that power supply output constant current flows through series connection carries out ageing processing.
Description
Technical field
The present embodiments relate to the power ageing technical fields of power module, and in particular to a kind of semi-conductor power module
Power ageing method and ageing device.
Background technology
The semi-conductor power module that IGBT or metal-oxide-semiconductor are formed is as a kind of high power semi-conductor device for power switching, extensively
There is wide market applied to the fields such as motor variable-frequency speed-regulating and various high-performance power supplies, industrial electric automation.Partly lead
Body power module is required for carrying out ageing processing before manufacture, and ageing processing is time-consuming longer, especially for military semiconductor work(
The ageing processing of rate module, requires according to army specifications, at least 160 hours work(must be all carried out to every semi-conductor power module
Rate old mine pit, when identification, need to carry out at least 1000 one-hour rating ageings again.
Existing ageing processing, is typically connected to power supply by each semi-conductor power module for treating ageing with parallel way
Between corresponding drive module, signal is generated by each drive module and drives corresponding semi-conductor power module on or off.
The signal for driving each semi-conductor power module progress ageing processing is independently to generate and be sent to semi-conductor power module, is
Framework of uniting is complicated, and the energy consumption of ageing processing is big.
Invention content
Technical problems to be solved of the embodiment of the present invention are, provide a kind of power ageing side of semi-conductor power module
Method can effectively reduce the energy consumption of ageing processing.
The further technical problems to be solved of the embodiment of the present invention are, it is old to provide a kind of power of semi-conductor power module
Device is refined, can effectively reduce the energy consumption of ageing processing.
In order to solve the above technical problems, the embodiment of the present invention adopts the following technical scheme that：A kind of semi-conductor power module
Power ageing method, includes the following steps：
The multiple semi-conductor power modules for treating ageing are connected, wherein, the first pole connection electricity of first semi-conductor power module
The output cathode in source, the first pole of other each semi-conductor power modules respectively correspondingly connected previous semi-conductor power module
The second pole, the last one semi-conductor power module the second pole connection power supply output negative pole, each semi-conductor power module
Third pole also connects a corresponding drive signal amplification module correspondingly respectively, and each drive signal amplifies mould
Block connects a corresponding isolated power supply correspondingly, and each drive signal amplification module is also connected to same
Signal generating circuit；
Drive signal is generated by signal generating circuit, the drive signal drives after amplifying via drive signal amplification module and partly leads
Body power module presses setting means turn-on and turn-off；
When semi-conductor power module is connected, the semi-conductor power module that power supply output constant current flows through series connection is carried out at ageing
Reason.
Further, each isolated power supply and a corresponding drive signal amplification module are integrated.
Further, the semi-conductor power module is the semi-conductor power module that IGBT is formed, and described first extremely collects
Electrode, the second extremely emitter, third extremely base stage.
Further, the semi-conductor power module is the semi-conductor power module that metal-oxide-semiconductor is formed, and described first extremely leaks
Pole, the second extremely source electrode, third extremely grid.
Further, there are one be used to indicate semi-conductor power module conducting shape for the also parallel connection of each semi-conductor power module
The light emitting diode of state, according to lumination of light emitting diode situation judge corresponding semi-conductor power module whether normally.
On the other hand, the embodiment of the present invention also provides a kind of power ageing device of semi-conductor power module, including power supply,
Signal generating circuit, drive signal amplification module, isolated power supply and multiple partly leading for ageing is respectively treated for connecting correspondingly
The link block of body power module, each link block are both provided with the first of the semi-conductor power module that ageing is treated for connection
First connecting pin of pole, for connect treat ageing semi-conductor power module the second pole second connection end and for connect treat
The third connecting pin of the third pole of the semi-conductor power module of ageing, each link block are arranged in series, wherein, first company
First connecting pin of connection module is additionally coupled to the output cathode of power supply, and the first connecting pin of other link blocks further average it is not right
Ground is answered to connect the second connection end of previous link block, the second connection end of the last one link block is also connected with the defeated of power supply
Go out cathode, the third connecting pin of each link block also connects corresponding drive signal amplification mould correspondingly respectively
Block；Each drive signal amplification module connects a corresponding isolated power supply correspondingly, each drive signal
Amplification module is also connected to same signal generating circuit.
Further, each isolated power supply and a corresponding drive signal amplification module are integrated.
Further, optocoupler or transformer are additionally provided between the drive signal amplification module and signal generating circuit.
Further, each link block further includes one and is connected between the first connecting pin and second connection end, is used for
Indicate the light emitting diode of semi-conductor power module conducting state that the link block is correspondingly connected with.
Using above-mentioned technical proposal, the embodiment of the present invention at least has the advantages that：The embodiment of the present invention passes through letter
Number circuit occurs and generates a scheduled drive signal to drive each IGBT or metal-oxide-semiconductor chip in semi-conductor power module,
Each drive signal amplification module is equipped with an isolated power supply power supply, and drive signal amplification module receives signal generating circuit and sends
The drive signal to come over drives in semi-conductor power module IGBT or metal-oxide-semiconductor chip by certain side again after drive signal is amplified
Formula on or off.Due to being using same drive signal, so during ageing, which makes the half of all series connection
At least one group of IGBT or metal-oxide-semiconductor chip simultaneously turn in conductor power module so that the constant current that power supply provides obtains
To flow through the semi-conductor power module that these are together in series, ageing is carried out by load of semi-conductor power module itself, is consumed
The power fallen is only itself inherent loss of semi-conductor power module, and ageing power consumption is greatly saved.And using this
When method carries out ageing, even if drive signal mistake occurs and module bridgc arm short is caused to lead directly to, semiconductor power will not be damaged
Module, the safety of semi-conductor power module when ensure that ageing.This method can be widely applied to be made of IGBT or metal-oxide-semiconductor half
The power ageing of conductor power module.
Description of the drawings
Fig. 1 is the circuit theory schematic diagram of power ageing method one embodiment of semi-conductor power module of the present invention.
Specific embodiment
The present invention is described in further detail in the following with reference to the drawings and specific embodiments.It should be appreciated that following signal
Property embodiment and explanation be only used for explaining the present invention, it is not as a limitation of the invention, moreover, in the absence of conflict,
The feature in embodiment and embodiment in the present invention can be combined with each other.
As shown in Figure 1, one embodiment of the invention provides a kind of power ageing method of semi-conductor power module, it is main to use
In the power ageing for IGBT or the semi-conductor power module 5 of metal-oxide-semiconductor composition, the ageing method includes the following steps：
The multiple semi-conductor power modules 5 for treating ageing are connected, wherein, the first pole connection of first semi-conductor power module 5
The output cathode of power supply 1, the first pole of other each semi-conductor power modules 5 respectively correspondingly connected previous semiconductor power
Second pole of module 5, the output negative pole of the second pole connection power supply 1 of the last one semi-conductor power module 5, each semiconductor power
The third pole of module 5 also connects a corresponding drive signal amplification module 3 correspondingly respectively, and each driving is believed
Number amplification module 3 connects a corresponding isolated power supply 4 correspondingly, and each drive signal amplification module 3 is also equal
It is connected to same signal generating circuit 2；
The drive signal of predetermined phase sequence is generated by signal generating circuit 2, the drive signal is put via drive signal amplification module 3
Driving semi-conductor power module 5 presses setting means turn-on and turn-off after big；
When semi-conductor power module 5 is connected, the semi-conductor power module 5 that the output constant current of power supply 1 flows through series connection carries out always
Refining is handled.
The embodiment of the present invention generates the drive signal of a predetermined phase sequence to drive semiconductor work(by signal generating circuit 2
Each IGBT or metal-oxide-semiconductor chip in rate module 5, the drive signal of the predetermined phase sequence can be square wave driving signal, each
Drive signal amplification module 3 is equipped with an isolated power supply 4 and provides driving energy, and drive signal amplification module 3 receives signal
The drive signal that circuit 2 sends over drives IGBT or metal-oxide-semiconductor core in semi-conductor power module 5 again after drive signal is amplified
Piece presses certain way on or off.Due to being using same drive signal, so during ageing, which makes institute
At least one group of IGBT or metal-oxide-semiconductor chip simultaneously turn in the semi-conductor power module 5 of series connection so that power supply 1 provides
Constant current be able to flow through these semi-conductor power modules 5 being together in series, using semi-conductor power module 5 itself as load into
Row ageing, the power consumed are only itself inherent loss of semi-conductor power module 5, and ageing electric power is greatly saved and disappears
Consumption.It and, will not even if drive signal mistake occurs and module bridgc arm short is caused to lead directly to when carrying out ageing in this way
Damage semi-conductor power module 5, the safety of semi-conductor power module when ensure that ageing.
It is understood that in one embodiment, treat the semi-conductor power module 5 of ageing is formed for IGBT half
During conductor power module, the described first extremely collector, the second extremely emitter, third extremely base stage.In another embodiment
In, and when the semi-conductor power module that the semi-conductor power module 5 of ageing is formed for metal-oxide-semiconductor, described first extremely leaks
Pole, the second extremely source electrode, third extremely grid.
In an alternative embodiment of the invention, each isolated power supply 4 amplifies with a corresponding drive signal
Module 3 is integrated.By integrated approach, ageing device can be caused to seem more succinct, be conveniently operated and safeguard pipe
Reason.
In another alternative embodiment of the invention, each semi-conductor power module 5 is also in parallel, and there are one be used to indicate
The light emitting diode 6 of semi-conductor power module conducting state judges corresponding semiconductor work(according to the situation that shines of light emitting diode 6
Rate module 5 whether normally.By setting light emitting diode 6, the semiconductor work(of institute's ageing can be shown at a glance
Whether rate module 5 normally connects or has damaged, and can effectively improve ageing treatment effeciency.
On the other hand, as shown in Figure 1, the embodiment of the present invention also provides a kind of power ageing dress of semi-conductor power module
It puts, including power supply 1, signal generating circuit 2, drive signal amplification module 3, isolated power supply 4 and multiple for correspondingly connecting
Connect the link block for the semi-conductor power module 5 for respectively treating ageing（It is not shown）, each link block is both provided with to connect
Treat the first connecting pin of the first pole of the semi-conductor power module 5 of ageing, for connecting the semi-conductor power module 5 for treating ageing
The second connection end of second pole and the third connecting pin for connecting the third pole for the semi-conductor power module 5 for treating ageing, it is described
Each link block is arranged in series, wherein, the first connecting pin of first link block is additionally coupled to the output cathode of power supply 1, and
First connecting pin of other link blocks further averages the second connection end of not correspondingly connected previous link block, the last one
The second connection end of link block is also connected with the output negative pole of power supply 1, and an a pair is also distinguished in the third connecting pin of each link block
It should the corresponding drive signal amplification module 3 of ground connection；Each drive signal amplification module 3 connects phase correspondingly
A corresponding isolated power supply 4, each drive signal amplification module 3 are also connected to same signal generating circuit 2.
The ageing device provided in this embodiment can efficiently go here and there each semi-conductor power module 5 for treating ageing
Connection completes that after being connected in series with of each semi-conductor power module 5 of ageing a predetermined phase can be generated by signal generating circuit 2
The drive signal of sequence drives each IGBT or metal-oxide-semiconductor chip in semi-conductor power module 5, the driving letter of the predetermined phase sequence
Number can be square wave driving signal, each drive signal amplification module 3 is equipped with an isolated power supply 4 and provides driving energy, driving
Signal amplification module 3 receives the drive signal that signal generating circuit 2 sends over, and drives semiconductor after drive signal is amplified again
IGBT or metal-oxide-semiconductor chip press certain way on or off in power module 5.Due to each drive signal amplification module 3
Same signal generating circuit 2 is also connected to, that is, treats that each semi-conductor power module 5 of ageing employs same driving letter
Number, during ageing, which makes in the semi-conductor power modules 5 of all series connection at least one group of IGBT or metal-oxide-semiconductor
Chip simultaneously turns on so that the constant current that power supply 1 provides is able to flow through these semi-conductor power modules being together in series
5, ageing is carried out by load of semi-conductor power module 5 itself, the power consumed is only itself of semi-conductor power module 5
Ageing power consumption is greatly saved in inherent loss.And when carrying out ageing in this way, even if there is mistake in drive signal
It misleads and module bridgc arm short is caused to lead directly to, semi-conductor power module 5 will not be damaged, semi-conductor power module when ensure that ageing
Safety.
It is understood that in one embodiment, treat the semi-conductor power module of ageing is formed for IGBT half
During conductor power module, the described first extremely collector, the second extremely emitter, third extremely base stage.In another embodiment
In, and when the semi-conductor power module that the semi-conductor power module of ageing is formed for metal-oxide-semiconductor, described first extremely leaks
Pole, the second extremely source electrode, third extremely grid.
The isolators such as optocoupler or transformer are additionally provided between the drive signal amplification module 3 and signal generating circuit 2
Part.By setting isolating device between drive signal amplification module 3 and signal generating circuit 2, it is possible to prevente effectively from not needing to
Signal interference.
In an alternative embodiment of the invention, each isolated power supply amplifies mould with a corresponding drive signal
Block is integrated.By integrated approach, ageing device can be caused to seem more succinct, be conveniently operated and maintenance management.
In another of the invention alternative embodiment, each link block further includes one and is connected to the first connecting pin and the
Between two connecting pins, it is used to indicate the light emitting diode of semi-conductor power module conducting state that the link block is correspondingly connected with
6.The present embodiment by setting light emitting diode 6, can show at a glance institute's ageing semi-conductor power module whether
Normal connection has damaged, and can effectively improve ageing treatment effeciency.
In the specific implementation, heavy DC constant-current source or current-limiting voltage-stabilizing power source may be used in the power supply 1.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention are limited by appended claims and its equivalency range.
Claims (9)
1. the power ageing method of a kind of semi-conductor power module, which is characterized in that include the following steps：
The multiple semi-conductor power modules for treating ageing are connected, wherein, the first pole connection electricity of first semi-conductor power module
The output cathode in source, the first pole of other each semi-conductor power modules respectively correspondingly connected previous semi-conductor power module
The second pole, the last one semi-conductor power module the second pole connection power supply output negative pole, each semi-conductor power module
Third pole connects a corresponding drive signal amplification module correspondingly respectively, and each drive signal amplification module
A corresponding isolated power supply is connected correspondingly, and each drive signal amplification module is also connected to same letter
Number occur circuit；
Drive signal is generated by signal generating circuit, the drive signal drives after amplifying via drive signal amplification module and partly leads
Body power module presses setting means turn-on and turn-off；
When semi-conductor power module is connected, the semi-conductor power module that power supply output constant current flows through series connection is carried out at ageing
Reason.
2. the power ageing method of semi-conductor power module according to claim 1, which is characterized in that each isolation
Power supply and a corresponding drive signal amplification module are integrated.
3. the power ageing method of semi-conductor power module according to claim 1, which is characterized in that the semiconductor work(
Rate module is the semi-conductor power module that IGBT is formed, the described first extremely collector, the second extremely emitter, third extremely base
Pole.
4. the power ageing method of semi-conductor power module according to claim 1, which is characterized in that the semiconductor work(
Rate module is the semi-conductor power module that metal-oxide-semiconductor is formed, and described first extremely drains, the second extremely source electrode, third extremely grid.
5. the power ageing method of the semi-conductor power module according to any one of claim 1 ~ 4, which is characterized in that every
One semi-conductor power module is also in parallel there are one the light emitting diode for being used to indicate semi-conductor power module conducting state, according to
Lumination of light emitting diode situation judge corresponding semi-conductor power module whether normally.
6. the power ageing device of a kind of semi-conductor power module, which is characterized in that including power supply, signal generating circuit, driving
Signal amplification module, isolated power supply and multiple connection moulds for being used to connect the semi-conductor power module for respectively treating ageing correspondingly
Block, each link block are both provided with the first connecting pin of the first pole of the semi-conductor power module that ageing is treated for connection, use
The second connection end of the second pole of the semi-conductor power module of ageing is treated in connection and for connecting the semiconductor power for treating ageing
The third connecting pin of the third pole of module, each link block are arranged in series, wherein, the first connection of first link block
End is additionally coupled to the output cathode of power supply, and the first connecting pin of other link blocks further averages not correspondingly connected previous company
The second connection end of connection module, the second connection end of the last one link block are also connected with the output negative pole of power supply, respectively connect mould
The third connecting pin of block also connects a corresponding drive signal amplification module correspondingly respectively；Each drive signal
Amplification module connects a corresponding isolated power supply correspondingly, and each drive signal amplification module is also connected to
Same signal generating circuit.
7. the power ageing device of semi-conductor power module according to claim 6, which is characterized in that each isolation
Power supply and a corresponding drive signal amplification module are integrated.
8. the power ageing device of the semi-conductor power module described according to claim 6 or 7, which is characterized in that the driving
Optocoupler or transformer are additionally provided between signal amplification module and signal generating circuit.
9. the power ageing device of the semi-conductor power module described according to claim 6 or 7, which is characterized in that each connection
Module further includes one and is connected between the first connecting pin and second connection end, is used to indicate what the link block was correspondingly connected with
The light emitting diode of semi-conductor power module conducting state.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810048428.1A CN108257895B (en) | 2018-01-18 | 2018-01-18 | Power aging method and aging device for semiconductor power module |
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| CN201810048428.1A CN108257895B (en) | 2018-01-18 | 2018-01-18 | Power aging method and aging device for semiconductor power module |
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Cited By (3)
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| CN110346705A (en) * | 2019-07-23 | 2019-10-18 | 西安伟京电子制造有限公司 | Ageing device and its ageing method for H-bridge circuit |
| CN111474457A (en) * | 2020-04-16 | 2020-07-31 | 西安太乙电子有限公司 | Test device for realizing power aging of field effect transistor |
| CN113533898A (en) * | 2021-07-23 | 2021-10-22 | 中国振华集团永光电子有限公司（国营第八七三厂） | Batch photoelectric coupler aging circuit |
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