CN108233766A

CN108233766A - A kind of energy composite energy Acquisition Circuit

Info

Publication number: CN108233766A
Application number: CN201810082606.2A
Authority: CN
Inventors: 夏银水; 王修登; 施阁; 叶益迭; 钱利波; 夏桦康
Original assignee: Ningbo University
Current assignee: Ningbo University
Priority date: 2018-01-29
Filing date: 2018-01-29
Publication date: 2018-06-29
Anticipated expiration: 2038-01-29
Also published as: CN108233766B

Abstract

The invention discloses a kind of energy composite energy Acquisition Circuit, feature is to include thermoelectric generation film, piezoelectric patches, positive peak detection module, negative peak detection module, zero potential handover module, the first inductance, the first diode, the first storage capacitor, the second storage capacitor and load；Advantage is when piezoelectric patches both end voltage reaches peak value, switching tube is connected by peak detection block, circuit is made to generate LC oscillations, thus will be in the electric charge transfer to the first inductance that accumulated on the charge in the parasitic capacitance in piezoelectric patches and the first storage capacitor, electric current on the first inductance reaches the moment of maximum value, first NMOS tube is disconnected by positive peak detection module immediately or third NMOS tube is disconnected by negative peak detection module immediately, by the energy being stored on the first inductance, by the first diode, all flow direction loads and the second storage capacitor, the complete self-powered of integrated circuit, energy acquisition efficiency is higher.

Description

A kind of energy composite energy Acquisition Circuit

Technical field

The present invention relates to a kind of energy acquisition circuit, especially a kind of energy composite energy Acquisition Circuit.

Background technology

Piezoelectric type vibration energy acquisition is a kind of piezoelectric effect using piezoelectric material, and the vibrational energy in environment is adopted The method of collection, since the output voltage of piezoelectric patches is AC signal, and general electronic equipment is powered by DC power supply, because This, needs an interface circuit between piezoelectric patches and electronic equipment, realizes alternating voltage to DC voltage by interface circuit Transformation, and the higher the better for the transfer efficiency of this interface circuit, and the interface circuit put forward at first is standard energy capture The advantages of circuit is made of a diode bridge rectifier circuit and a filter capacitor, this structure is that circuit is simple, is stablized Reliably, still, since there are the losses of the threshold voltage of diode so that the collecting efficiency of circuit is low, and this structure Collecting efficiency is easily influenced by the size loaded.

Thermoelectric generation film can carry out energy acquisition using the temperature difference in environment, but the temperature difference usually in environment is smaller, temperature The open-circuit voltage of poor power generation sheet is very low, and the factors such as efficiency of energy acquisition circuit between power generation sheet and load increase the temperature difference The difficulty that can be utilized；Temperature-difference thermoelectric energy Acquisition Circuit is broadly divided into capacitive charge pump circuit and inductance type boost boostings at present Circuit, although charge pump circuit can promote the voltage of thermoelectric generation film, charge pump construction driving force is very weak, low tension Lotus pump circuit is even more inefficiency；Inductance type boost booster circuits are although efficient, and drive the ability of load strong, but one As thermoelectric generation film open-circuit voltage be less than switching tube threshold voltage, which results in boost structures to generally require external confession Power supply, when access failure externally fed power supply can not self-starting, increase use cost.

In order to obtain more energy from environment, the general power of environmental energy acquisition is improved, there is researcher's proposition The thought of multi-source energy acquisition acquires the energy of the diversified forms such as vibrational energy, thermal energy, microwave radiation in environment, still Since the signal that different energy sources generate is entirely different, different signals cannot be directly coupled together, so general multi-source energy Quantity collection system, generally use comparison method, i.e. the size selection acquisition wherein energy by comparing two kinds of energy densities are stronger A kind of energy, therefore can cause another energy that can not be collected, influence whole collecting efficiency.

Invention content

The technical problems to be solved by the invention are to provide one kind can acquire piezoelectric type vibration energy and temperature-difference thermoelectric simultaneously The energy composite energy Acquisition Circuit of energy.

Technical solution is used by the present invention solves above-mentioned technical problem：A kind of energy composite energy Acquisition Circuit, including temperature Poor power generation sheet, piezoelectric patches, positive peak detection module, negative peak detection module, zero potential handover module, the first inductance, the one or two Pole pipe, the first storage capacitor, the second storage capacitor and load, the 1st pin of the thermoelectric generation film, first energy storage One end of capacitance and the connection of one end of first inductance, the other end of first inductance, positive peak detection The anode connection of the input terminal of module, the input terminal of the negative peak detection module and first diode, it is described One end connection of the cathode of first diode, the anode of second storage capacitor and the load, the positive peak The anode of detection module, the cathode of the negative peak detection module, the 1st pin of the piezoelectric patches and the zero potential The first input end connection of handover module, the cathode of the positive peak detection module, the negative peak detection module are just The second input terminal connection of pole, the 2nd pin of the piezoelectric patches and the zero potential handover module, the thermo-electric generation 2nd pin of piece, the other end of first storage capacitor, the cathode of second storage capacitor, the load The ground terminal of the other end and the zero potential handover module is grounded.

The positive peak detection module includes the first PNP pipe, the first capacitance, the first NMOS tube, the second NMOS tube, the 4th Diode and the 5th diode, the negative peak detection module include the second PNP pipe, the second capacitance, third NMOS tube, the 4th NMOS tube, the 6th diode and the 7th diode, the zero potential handover module include the second diode and third diode, 1st pin of the piezoelectric patches, the cathode of the 7th diode, the source electrode of the 4th NMOS tube, described The anode of two diodes, the grid of second NMOS tube, the anode of the 4th diode and first PNP pipe Base stage connection, the transmitting of the cathode of the 4th diode, one end of first capacitance and first PNP pipe Pole connects, and the other end of first capacitance is connect with the drain electrode of second NMOS tube, the collection of first PNP pipe Electrode is connect with the grid of first NMOS tube, the draining of first NMOS tube, the leakage of the third NMOS tube Pole, one end of first inductance and first diode anode connection, the source electrode of first NMOS tube with The anode connection of 5th diode, it is the cathode of the 5th diode, the source electrode of second NMOS tube, described The anode of third diode, the 2nd pin of the piezoelectric patches, the grid of the 4th NMOS tube, the described the 6th 2 The base stage of the anode of pole pipe and second PNP pipe connects, drain electrode and second capacitance of the 4th NMOS tube One end connection, the other end of second capacitance, the emitter of second PNP pipe and the 6th diode Cathode connects, and the collector of second PNP pipe is connect with the grid of the third NMOS tube, the third NMOS tube Source electrode connect with the anode of the 7th diode, the cathode of second diode and the third diode it is negative Extremely it is grounded.

Compared with prior art, the advantage of the invention is that by by the parasitic capacitance in the first inductance and piezoelectric patches and The first energy storage capacitor in series to be charged by thermoelectric generation film, when piezoelectric patches both end voltage reaches peak value, passes through peak detection mould Switching tube is connected in block, and circuit is made to generate LC oscillations, thus by the charge in the parasitic capacitance in piezoelectric patches and the first storage capacitor In the electric charge transfer of upper accumulation to the first inductance, the electric current on the first inductance reaches the moment of maximum value, is examined by positive peak It surveys module to disconnect the first NMOS tube immediately or disconnect third NMOS tube immediately by negative peak detection module, the first electricity will be stored in Energy in sense all flows to load and the second storage capacitor by the first diode, and integrated circuit is complete self-starting, confession Electricity, persistently the temperature-difference thermoelectric energy in local environment and piezoelectric vibration can be acquired, so as to improve integrated circuit Energy acquisition efficiency, and reduce use cost.

Description of the drawings

Fig. 1 is the circuit diagram of the present invention；

Fig. 2 is the circuit structure diagram of the present invention.

Specific embodiment

The present invention is described in further detail below in conjunction with attached drawing embodiment.

A kind of energy composite energy Acquisition Circuit, including thermoelectric generation film U1, piezoelectric patches U2, positive peak detection module U3, negative peak It is worth detection module U4, zero potential handover module U5, the first inductance L1, the first diode D1, the first storage capacitor Ct, the second energy storage Capacitance Cr and load RL, one end of the 1st pin of thermoelectric generation film U1, one end of the first storage capacitor Ct and the first inductance L1 connect Connect, the other end of the first inductance L1, the input terminal of positive peak detection module U3, negative peak detection module U4 input terminal and first The anode connection of diode D1, one end connection of the cathode of the first diode D1, the anode of the second storage capacitor Cr and load RL, The anode of positive peak detection module U3, the cathode of negative peak detection module U4, the 1st pin of piezoelectric patches U2 and zero potential switching mould The first input end connection of block U5, the cathode of positive peak detection module U3, the anode of negative peak detection module U4, piezoelectric patches U2 The second input terminal of 2nd pin and zero potential handover module U5 connect, the 2nd pin, the first storage capacitor of thermoelectric generation film U1 The other end of Ct, the second storage capacitor Cr cathode, load the other end of RL and the ground terminal of zero potential handover module U5 connects Ground.

Positive peak detection module U3 include the first PNP pipe B1, the first capacitance C1, the first NMOS tube N1, the second NMOS tube N2, 4th diode D4 and the 5th diode D5, negative peak detection module U4 include the second PNP pipe B2, the second capacitance C2, third NMOS tube N3, the 4th NMOS tube N4, the 6th diode D6 and the 7th diode D7, zero potential handover module U5 include the two or two pole The 1st pin of pipe D2 and third diode D3, piezoelectric patches U2, the cathode of the 7th diode D7, the source electrode of the 4th NMOS tube N4, The anode of two diode D2, the grid of the second NMOS tube N2, the anode of the 4th diode D4 and the first PNP pipe B1 base stage connect It connects, the emitter connection of the cathode of the 4th diode D4, one end of the first capacitance C1 and the first PNP pipe B1, the first capacitance C1's The other end is connect with the drain electrode of the second NMOS tube N2, and the collector of the first PNP pipe B1 is connect with the grid of the first NMOS tube N1, the The drain electrode of one NMOS tube N1, the drain electrode of third NMOS tube N3, the anode connection of one end of the first inductance L1 and the first diode D1, The source electrode of first NMOS tube N1 connect with the anode of the 5th diode D5, the cathode of the 5th diode D5, the second NMOS tube N2 Source electrode, the anode of third diode D3, the 2nd pin of piezoelectric patches U2, the grid of the 4th NMOS tube N4, the 6th diode D6 are just The base stage of pole and the second PNP pipe B2 connect, and the drain electrode of the 4th NMOS tube N4 is connect with one end of the second capacitance C2, the second capacitance C2 The other end, the second PNP pipe B2 emitter and the 6th diode D6 cathode connection, the collector of the second PNP pipe B2 and the The grid connection of three NMOS tube N3, the source electrode of third NMOS tube N3 are connect with the anode of the 7th diode D7, the second diode D2 The cathode of cathode and the third diode D3 be grounded.

Definition is as just half of period of the voltage on the 1st pin of piezoelectric patches U2 higher than the voltage of the 2nd pin for circuit In the period, in positive half period, the voltage on the 1st pin of piezoelectric patches U2 is higher than the voltage of the 2nd pin, in positive half period, temperature Poor power generation sheet U1 charges to the first storage capacitor Ct, and the voltage for detecting piezoelectric patches U2 both ends in positive peak detection module U3 reaches During peak value, the first NMOS tube N1 is just closed, one is formed so as to cause the first storage capacitor Ct, the first inductance L1 and piezoelectric patches U2 LC oscillation circuits, by 1/4 LC cycle of oscillation, the electricity that is accumulated on the first storage capacitor Ct and piezoelectric patches U2 internal parasitic capacitances Lotus will be transferred on the first inductance L1, complete the conversion from electric energy to magnetic energy, after the completion of electric charge transfer, on the first inductance L1 Electric current reach maximum value, due on piezoelectric patches U2 internal parasitic capacitances charge all discharge, the voltage at piezoelectric patches U2 both ends Zero is fallen to, at the same time, the electric current that positive peak detection module U3 is disconnected on the first NMOS tube N1, the first inductance L1 passes through first Diode D1 flows to the second storage capacitor Cr and load RL, completes conversion of the magnetic energy to electric energy；Similarly, definition is as piezoelectric patches U2 The voltage that voltage on 1st pin is less than the 2nd pin is negative half-cycle, and in negative half-cycle, thermoelectric generation film U1 is to the first storage The Ct chargings of energy capacitance, when negative peak detection circuit U4 detects that the voltage at piezoelectric patches U2 both ends reaches peak value, are just closed third NMOS tube N3 forms a circuit, by 1/4 LC so as to cause the first storage capacitor Ct, the first inductance L1 and piezoelectric patches U2 The charge accumulated on cycle of oscillation, the first storage capacitor Ct and piezoelectric patches U2 internal parasitic capacitances will be transferred to the first inductance L1 On, while the conversion from electric energy to magnetic energy is completed, after the completion of electric charge transfer, the electric current on the first inductance L1 reaches maximum value, Since the charge on piezoelectric patches U2 internal parasitic capacitances all discharges, the voltage at piezoelectric patches U2 both ends falls to zero, meanwhile, negative peak The electric current that value detection circuit U4 is disconnected on third NMOS tube N3, the first inductance L1 flows to the second energy storage electricity by the first diode D1 Hold Cr and load RL, it is achieved thereby that being acquired while piezoelectric vibration energy and temperature-difference thermoelectric energy, zero potential handover module is used for One end that voltage is higher in the first input end and the second input terminal of piezoelectric patches U2 is grounded, the other end is in negative potential, so as to Form LC oscillation circuits.

Claims

1. a kind of energy composite energy Acquisition Circuit, it is characterised in that including thermoelectric generation film, piezoelectric patches, positive peak detection module, bear Peak detection block, zero potential handover module, the first inductance, the first diode, the first storage capacitor, the second storage capacitor and negative It carries, one end of the 1st pin of the thermoelectric generation film, one end of first storage capacitor and first inductance connects It connects, the other end of first inductance, the input terminal of the positive peak detection module, the negative peak detection module The anode of input terminal and first diode connects, the cathode of first diode, second storage capacitor Anode and the load one end connection, the anode of the positive peak detection module, the negative peak detection module Cathode, the piezoelectric patches the 1st pin and the zero potential handover module first input end connection, the posivtive spike It is worth the cathode of detection module, the anode of the negative peak detection module, the 2nd pin of the piezoelectric patches and described zero electricity The second input terminal connection of position handover module, the 2nd pin of the thermoelectric generation film, first storage capacitor it is another End, the cathode of second storage capacitor, the other end of the load and the zero potential handover module ground terminal It is grounded.

A kind of 2. energy composite energy Acquisition Circuit according to claim 1, it is characterised in that the positive peak detection module Including the first PNP pipe, the first capacitance, the first NMOS tube, the second NMOS tube, the 4th diode and the 5th diode, described is negative Peak detection block includes the second PNP pipe, the second capacitance, third NMOS tube, the 4th NMOS tube, the 6th diode and the seven or two pole Pipe, the zero potential handover module includes the second diode and third diode, the 1st pin of the piezoelectric patches, described The cathode of the 7th diode, the source electrode of the 4th NMOS tube, the anode of second diode, described second The base stage connection of the grid of NMOS tube, the anode of the 4th diode and first PNP pipe, the four or two pole The cathode of pipe, one end of first capacitance and first PNP pipe emitter connection, first capacitance it is another One end is connect with the drain electrode of second NMOS tube, the collector of first PNP pipe and first NMOS tube Grid connects, the draining of first NMOS tube, the draining of the third NMOS tube, one end of first inductance and The anode connection of first diode, the source electrode of first NMOS tube and the anode of the 5th diode connect Connect, the cathode of the 5th diode, the source electrode of second NMOS tube, the third diode anode, described The 2nd pin of piezoelectric patches, the grid of the 4th NMOS tube, the 6th diode anode and described second The base stage connection of PNP pipe, the drain electrode of the 4th NMOS tube are connect with one end of second capacitance, the described second electricity The cathode connection of the other end of appearance, the emitter of second PNP pipe and the 6th diode, the 2nd PNP The collector of pipe is connect with the grid of the third NMOS tube, the source electrode of the third NMOS tube and the seven or two pole The anode connection of pipe, the cathode of second diode and the cathode of the third diode are grounded.