CN108231922A - A kind of novel graphite alkene photovoltaic cell - Google Patents

A kind of novel graphite alkene photovoltaic cell Download PDF

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Publication number
CN108231922A
CN108231922A CN201810029678.0A CN201810029678A CN108231922A CN 108231922 A CN108231922 A CN 108231922A CN 201810029678 A CN201810029678 A CN 201810029678A CN 108231922 A CN108231922 A CN 108231922A
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photovoltaic
photovoltaic cell
cell according
active layer
graphene
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贾纬民
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Beijing New Hope Technology Development Co.,Ltd.
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Putian Chaowei Two-Dimensional Technology Development Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0296Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/624Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings
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    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
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    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/549Organic PV cells

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Abstract

The present invention relates to a kind of novel graphite alkene photovoltaic cells, it is made of at least one photovoltaic cells, each photovoltaic cells include substrate, positioned at the active layer of substrate surface and positioned at active layer both ends and the electrode that contact with the active layer, wherein the active layer includes 2 10% graphene, 5 20% photovoltaic active material and conducting resinl.Present invention utilizes the characteristics that graphene has swift electron mobility, graphene combination photoelectric material and conductive adhesive are formed into active layer, can by photovoltaic material by illumination when the rapid efficient migration export of the charge that instantaneously generates, while a kind of novel photovoltaic battery is realized, the significantly reduction of cost is also achieved.

Description

A kind of novel graphite alkene photovoltaic cell
Technical field
The present invention relates to field of batteries, are specifically related to a kind of novel photovoltaic cell.
Background technology
Since the non-renewable energy resources such as electric power, coal, oil signal for help repeatedly, energy problem, which has become, restricts international community The bottleneck of economic development, and developing solar energy resources becomes the new power for seeking economic development.
In this context, since source is inexhaustible, the new hot spot researched and developed in the world is become by solar power generation, and Photovoltaic cell for the luminous energy of the sun being converted into electric energy has been obtained for interim development.
Photovoltaic cell has the following advantages:Without it is exhausted it is dangerous, pollution-free, do not limited by resource distribution region, can with It is relatively reliable etc. that the power generation nearby of electricity place, energy quality are high, electric power system works.
But it is existing using semiconductor power generation photovoltaic cell still have no idea to accomplish real overall application, mainly by It is still relatively low in its conversion ratio, about 20% or so, and most importantly cost is excessively high, overall economic benefit it is not accomplish It is satisfied.
Invention content
In order to solve the problems, such as that existing photovoltaic cell conversion ratio is low of high cost, benefit is poor, the present invention provides a kind of new Type graphene photovoltaic cell.
Technical solution of the present invention is as follows:
A kind of novel graphite alkene photovoltaic cell, it is characterised in that be made of at least one photovoltaic cells, each photovoltaic Battery unit includes substrate, positioned at the active layer of substrate surface and positioned at active layer both ends and the electricity that is contacted with the active layer Pole, wherein the active layer includes the photovoltaic active material and conducting resinl of the graphene of mass fraction 2-10%, 5-20%.
The preferred graphene is individual layer or form the few-layer graphene alkene, is 90-98% to sunlight light transmittance.
The preferred substrate is transparent substrates, including glass, rigid plastics thin slice or soft plastic film.
The further preferred plastics include the transparent plastics such as PC, PET, PMMA or polyacrylate.
The preferred conducting resinl is nano transparent hydroxymethyl cellulose conducting resinl.
Under the optimum condition of above-mentioned each transparent material, photovoltaic cell be preferably laminated by 2-10 layers of photovoltaic cells and Into.
The photovoltaic active material of preferred every layer of photovoltaic cells is not exactly the same.
The photovoltaic active material can be common cadmium telluride, cadmium sulfide, zinc selenide, zinc sulphide, mercury cadmium telluride or biology The materials such as matter chlorophyll.
The two poles of the earth of the electrode are respectively the metal of Electromotive Difference Of Potential > 2.2V.
The preferred electrode is respectively copper, aluminium.
The technology of the present invention effect:
For general semiconductor photovoltaic material, the electronics instantaneously generated when being illuminated by the light is easily quenched, can not Easily it is converted into electric current.Present invention utilizes graphene with swift electron mobility characteristic (graphene with 200000cm2The electron mobility of/Vs is 100-200 times of silicon, and resistivity is extremely low), graphene is combined into a small amount of photovoltaic material Material forms active layer with conductive adhesive and is coated on the novel photovoltaic cell of substrate surface composition, and photovoltaic material dosage can be substantially It reduces, basic change also occurs for battery structure and principle, and metal foil electrode need to be only set in active layer both sides, small by its Potential difference can by photovoltaic material by illumination when the rapid efficient migration export of the charge that instantaneously generates and be unlikely to be quenched, realize A kind of novel structure simple photovoltaic cell.Meanwhile the significantly reduction of cost is also achieved, due to graphene and light Volt material is less by dosage of working in coordination, and under equal output power, cost is only the four of existing common photovoltaic cell / mono-.
Further, it can reach 98% or so by using the graphene with certain transparency, particularly light transmittance Active layer is made in the photovoltaic material that single-layer graphene combines limited amount of the present invention, is coated on transparent substrate surface and forms transparent light Battery unit is lied prostrate, multilayer photovoltaic cells can be superimposed use in this way, sunlight penetration multilayer photovoltaic cells produce simultaneously Raw effect, can be substantially improved energy conversion rate.
Further, the active layer of each photovoltaic cells can be used the photovoltaic material of different absorption frequencies, in transmission The photovoltaic material that the spectral energy of layer can be had different wave length absorption characteristic by lower floor absorbs, and makes sunlight power spectrum in wide spectrum condition It is lower to be absorbed, daylight is adequately utilized, the mechanism of action of photovoltaic generation is made to open up more effective space.
Description of the drawings
Fig. 1 is photovoltaic cells schematic diagram;
Fig. 2 is the schematic diagram that photovoltaic cells form photovoltaic cell.
Each label lists as follows in figure:
1- photovoltaic cells, 2- transparent substrates, 3- active layers, 4- electrodes, 5- shells.
Specific embodiment
In order to better understand the present invention, the present invention is further explained below in conjunction with the accompanying drawings.
Embodiment 1
A kind of novel graphite alkene photovoltaic cell of the present embodiment, is made of 8 layers of photovoltaic cells 1, as shown in Figure 1, often A photovoltaic cells 1 include transparent substrates 2, positioned at the transparent active layer 3 on 2 surface of transparent substrates and positioned at 3 both ends of active layer And the electrode 4 contacted with the active layer 3.
The specific preparation method of each photovoltaic cells 1 is as follows:
Photovoltaic active material ZnS, mono-layer graphite aqueous solution and electrically conducting transparent glue nanometer CMC solution are mixed into shape first Into smears, graphene mass fraction is 2% in smears, ZnS mass fractions are 10%, CMC mass fractions are 10%, and lead to The mode for crossing spin coating is coated on 2 surface of transparent substrates formation active layer 3, thickness 100-150um or so, and transparent substrates 2 are saturating for PC Then bright film adheres to anode and cathode paillon respectively in 3 both sides of active layer, the present embodiment uses common aluminium foil and copper foil, Photovoltaic cells 1 are formed, then totally 8 layers of sliced layer are stacked in square frame as shown in Figure 2 by the photovoltaic cells 1, Ensure that whole photovoltaic cells are respectively provided with certain translucency, form Multilayer power generating apparatus, every layer of electrode is given with conducting wire It connects and is packed into the protection of transparent outer cover 5 and form photovoltaic cell entirety.It is produced after light source incidence photovoltaic material absorption spectrum energy Raw electronics, the graphene para-electric kinetic potential direction for forming conductive net is quickly moved out electronics.
For the conversion ratio of the present embodiment up to 25% or so, cost is only a quarter of common monocrystalline Silicon photrouics.
Embodiment 2
The present embodiment preparation method is same as above, and is four layers difference lies in photovoltaic cells, graphene quality point in active layer Number 3%, the photovoltaic material of four layers of photovoltaic cells is spaced two-by-two is respectively adopted ZnS and chlorophyll, and it is not 5% that mass fraction, which is, With 20%, it is coated on plate glass.
Embodiment 3
The present embodiment preparation method is same as above, and is six layers difference lies in photovoltaic cells, graphene quality point in active layer Number 5%, photovoltaic material are cadmium telluride, and mass fraction 5% is coated on PET transparent membranes.
Embodiment 4
The present embodiment preparation method is same as above, and is three layers difference lies in photovoltaic cells, graphene quality point in active layer Number 4%, every layer of photovoltaic material are respectively ZnS, cadmium telluride, chlorophyll, and mass fraction is respectively 5%, 5% and 15%, is coated on On acrylic glass.
In above-described embodiment, the content of nanometer CMC visually coats situation and thickness is suitably adjusted, and frame and shell can be Various shapes, such as rectangular, round, polygon, isomery shape or deformable, flexible, folding etc..
In addition graphene is if not individual layer, but the bad few layer of transparency or more layers, then photovoltaic cell list Member can also take few layer or only one layer, and other materials can not use transparent material yet, and since the number of plies is reduced, transfer efficiency can be slightly It is low, about 10% or so, but cost still has and has great advantage, and can be laid with the modes such as area by increase to meet using need It asks.
The foregoing is merely the preferable specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, Any one skilled in the art in the technical scope disclosed by the present invention, the change or replacement that can be readily occurred in Deng, such as the replacement of the number of plies, electrode material, base material, photovoltaic material, conducting resinl etc., it should all cover the protection in the present invention Within the scope of.Therefore, protection scope of the present invention should be subject to the protection domain of claims.

Claims (10)

1. a kind of novel graphite alkene photovoltaic cell, it is characterised in that be made of at least one photovoltaic cells, each photovoltaic electric Pool unit includes substrate, positioned at the active layer of substrate surface and positioned at active layer both ends and the electrode that is contacted with the active layer, Wherein described active layer includes the photovoltaic active material and conducting resinl that mass fraction is the graphene of 2-10%, 5-20%.
2. photovoltaic cell according to claim 1, it is characterised in that the graphene be individual layer or form the few-layer graphene alkene, light transmission Rate is 90-98%.
3. photovoltaic cell according to claim 2, it is characterised in that the substrate is transparent substrates, including glass, hard Plastic tab or soft plastic film.
4. photovoltaic cell according to claim 3, it is characterised in that the plastics include PC, PET, PMMA or polyacrylic acid Ester.
5. photovoltaic cell according to claim 3, it is characterised in that the conducting resinl is conductive for transparent hydroxymethyl cellulose Glue.
6. photovoltaic cell according to claim 5, it is characterised in that be laminated by 2-10 layers of photovoltaic cells.
7. photovoltaic cell according to claim 6, it is characterised in that the photovoltaic active material of every layer of photovoltaic cells is not It is identical.
8. photovoltaic cell according to claim 1, it is characterised in that the photovoltaic active material for cadmium telluride, cadmium sulfide, Zinc selenide, zinc sulphide, mercury cadmium telluride or biomass chlorophyll.
9. photovoltaic cell according to claim 1, it is characterised in that the two poles of the earth of the electrode are respectively Electromotive Difference Of Potential > The metal of 2.2V.
10. photovoltaic cell according to claim 9, it is characterised in that the electrode is respectively copper, aluminium.
CN201810029678.0A 2018-01-12 2018-01-12 A kind of novel graphite alkene photovoltaic cell Pending CN108231922A (en)

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110023946A1 (en) * 2008-10-22 2011-02-03 Quan Li Liquid crystalline blends, device thereof and method thereof
KR101059072B1 (en) * 2010-07-09 2011-08-24 성균관대학교산학협력단 Solar cell using graphene and method of manufacturing the same
KR20140015095A (en) * 2012-07-27 2014-02-06 한국화학연구원 Fabricatin method of absorber layer for thin-film solar cell
CN204118136U (en) * 2014-08-14 2015-01-21 常州二维碳素科技有限公司 A kind of organic solar batteries
CN104600147A (en) * 2015-01-16 2015-05-06 浙江大学 Grapheme/cadmium telluride solar battery and preparation method thereof
CN105633193A (en) * 2014-10-31 2016-06-01 中国科学院物理研究所 Adjustable-response-wavelength ultraviolet detector
CN106159003A (en) * 2015-04-09 2016-11-23 中国科学院物理研究所 A kind of photovoltaic devices and a kind of method producing photovoltaic effect
CN106328720A (en) * 2016-09-07 2017-01-11 鲍小志 Graphene-phosphorus heterojunction photodetector and manufacturing method
CN106611800A (en) * 2015-10-19 2017-05-03 陈柏颕 Solar film structure and manufacturing method and device thereof
CN106653875A (en) * 2017-02-20 2017-05-10 江苏欧耐尔新型材料股份有限公司 Nano light absorption composite material and preparation method thereof, and coated film preparation method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110023946A1 (en) * 2008-10-22 2011-02-03 Quan Li Liquid crystalline blends, device thereof and method thereof
KR101059072B1 (en) * 2010-07-09 2011-08-24 성균관대학교산학협력단 Solar cell using graphene and method of manufacturing the same
KR20140015095A (en) * 2012-07-27 2014-02-06 한국화학연구원 Fabricatin method of absorber layer for thin-film solar cell
CN204118136U (en) * 2014-08-14 2015-01-21 常州二维碳素科技有限公司 A kind of organic solar batteries
CN105633193A (en) * 2014-10-31 2016-06-01 中国科学院物理研究所 Adjustable-response-wavelength ultraviolet detector
CN104600147A (en) * 2015-01-16 2015-05-06 浙江大学 Grapheme/cadmium telluride solar battery and preparation method thereof
CN106159003A (en) * 2015-04-09 2016-11-23 中国科学院物理研究所 A kind of photovoltaic devices and a kind of method producing photovoltaic effect
CN106611800A (en) * 2015-10-19 2017-05-03 陈柏颕 Solar film structure and manufacturing method and device thereof
CN106328720A (en) * 2016-09-07 2017-01-11 鲍小志 Graphene-phosphorus heterojunction photodetector and manufacturing method
CN106653875A (en) * 2017-02-20 2017-05-10 江苏欧耐尔新型材料股份有限公司 Nano light absorption composite material and preparation method thereof, and coated film preparation method

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