CN104600147A - Grapheme/cadmium telluride solar battery and preparation method thereof - Google Patents
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- CN104600147A CN104600147A CN201510021250.8A CN201510021250A CN104600147A CN 104600147 A CN104600147 A CN 104600147A CN 201510021250 A CN201510021250 A CN 201510021250A CN 104600147 A CN104600147 A CN 104600147A
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910021389 graphene Inorganic materials 0.000 claims description 71
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 66
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 239000011787 zinc oxide Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229960001296 zinc oxide Drugs 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 238000010248 power generation Methods 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract 2
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 74
- 238000000151 deposition Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000002207 thermal evaporation Methods 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The invention relates to a grapheme/cadmium telluride solar battery and a preparation method thereof. The grapheme/cadmium telluride solar battery is composed of substrate material, grapheme, cadmium telluride and an electrode. Photon-generated carriers are mainly generated in a cadmium telluride layer, and a Schottky junction formed by a grapheme layer and the cadmium telluride layer gathers the photon-generated carriers. The grapheme/cadmium telluride solar battery uses the low cost cadmium telluride as light absorption material, is simple in technology, can be manufactured into a flexible battery and a double-faced battery, enlarges an application field and improves actual power generation capacity.
Description
Technical field
The present invention relates to a kind of solar cell and preparation method thereof, particularly relate to a kind of Graphene/cadmium-Te solar battery and preparation method thereof, belong to technical field of solar batteries.
Background technology
Solar cell, as a kind of new green power, is the most important regenerative resource of sustainable development of the mankind.At present, the share of crystal-silicon solar cell occuping market ~ 90%.But compared with conventional power generation usage, solar cell cost of electricity-generating is still higher, limits its extensive use.One of reason that solar cell cost of electricity-generating is higher is that battery manufacture cost is higher and electricity conversion is lower.
Since grapheme material finds, its heterojunction structure solar cell is that Graphene opens gate in the application of energy field in the application study of field of photovoltaic power generation.At present, the heterojunction that existing researcher utilizes Graphene and GaAs material to be formed makes solar cell, and the highest transformation efficiency reaches 15.5%.For solar cell application, cadmium telluride causes extensive concern due to lower cost, and occupies the highest share in current film-type photovoltaic cell market.Cadmium telluride has more suitable energy gap, also be direct band gap material, expection can obtain higher transformation efficiency on the basis of low cost, Cadimium telluride thin film backing material is also applicable to being applied in flexible battery design simultaneously, can double-side cell be obtained in conjunction with electrode structural designs again, obtain the solar cell had wide range of applications.
Summary of the invention
The object of the present invention is to provide a kind of preparation technology simple and Graphene/cadmium-Te solar battery that transformation efficiency is high and preparation method thereof.
Graphene/cadmium-Te solar battery of the present invention, there are substrate, conduction film plating layer, cadmium-telluride layer and graphene layer from bottom to top successively, described solar cell is also provided with the first electrode and the second electrode, and the first electrode is arranged on conduction film plating layer, and the second electrode is arranged on graphene layer; Or have substrate, graphene layer and cadmium-telluride layer successively from bottom to top, be also provided with the first electrode and the second electrode, the first electrode is arranged on cadmium-telluride layer, and the second electrode is arranged on graphene layer.
In technique scheme, described conduction film plating layer can be metal, ITO, FTO, N-shaped doping zinc-oxide or p-type doping zinc-oxide.
Graphene in described graphene layer is generally 1-10 layer.
Described substrate can be rigid substrate or flexible substrate.
The first described electrode can be the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel, and the second described electrode can be the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel.
Prepare the method for above-mentioned Graphene/cadmium-Te solar battery, comprise the steps:
At the Grown conduction film plating layer of cleaning; On conduction film plating layer, deposit cadmium-telluride layer again, and reserve the area of growth first electrode on conduction film plating layer surface, then Graphene is transferred on cadmium-telluride layer, cadmium-telluride layer obtains graphene layer; Reserve area place deposition of first electrode at conduction film plating layer, graphene layer deposits the second electrode;
Or Graphene is transferred on clean substrate, substrate shifts graphene layer; Graphene layer deposits cadmium-telluride layer, and reserves the area of growth second electrode on graphene layer surface; Deposition of first electrode on cadmium-telluride layer, on graphene layer, reserved area place deposits the second electrode.
The beneficial effect that the present invention compared with prior art has is: compared with conventional crystal silicon solar cell manufacturing process, solar cell of the present invention is while having high conversion efficiency, also there is preparation technology simple, lower-cost advantage, is conducive to the development of flexible solar cell and double-side solar cell in addition.
accompanying drawing illustrates:
Fig. 1 is a kind of structural representation of Graphene/cadmium-Te solar battery;
Fig. 2 is the another kind of structural representation of Graphene/cadmium-Te solar battery.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
With reference to Fig. 1, Graphene/cadmium-Te solar battery of the present invention has substrate 1, conduction film plating layer 2, cadmium-telluride layer 3 and graphene layer 4 from bottom to top successively, described solar cell is also provided with the first electrode 5 and the second electrode 6, first electrode 5 is arranged on conduction film plating layer 2, and the second electrode 6 is arranged on graphene layer 4.Or Graphene/cadmium-Te solar battery of the present invention has substrate 1, graphene layer 4 and cadmium-telluride layer 3 from bottom to top successively, described solar cell is also provided with the first electrode 5 and the second electrode 6, first electrode 5 is arranged on cadmium-telluride layer 3, second electrode 6 is arranged on graphene layer 4, as shown in Figure 2.
Embodiment 1:
1) polyimide flex substrate cleaned up in deionized water and dry up;
2) what on polyimide flex substrate, utilize magnetron sputtering deposition 50 nanometer thickness mixes indium tin oxide (ITO);
3) physical gas phase deposition technology is utilized to deposit the cadmium-telluride layer of 8 micron thickness mixing on indium stannic oxide layer, and the area of reserved growth first electrode on the ito layer;
4) 10 layer graphenes are transferred on cadmium-telluride layer;
5) on graphene layer and ITO layer reserve area place coating silver starch and dry; Obtain Flexible graphene/cadmium telluride solar cell.
Embodiment 2:
1) glass substrate cleaned up in deionized water and dry up;
2) fluorine doped tin oxide (FTO) of magnetron sputtering deposition 100 nanometer thickness is utilized on a glass substrate;
3) on fluorine doped tin oxide layer, utilize physical gas phase deposition technology to deposit the cadmium-telluride layer of 6 micron thickness, and reserve the area of growth first electrode on FTO layer;
4) single-layer graphene is transferred on cadmium-telluride layer;
5) reserved area place thermal evaporation grid line gold electrode on graphene layer and on fluorine doped tin oxide layer; Obtain the Graphene/cadmium-Te solar battery of generating electricity on two sides.
Embodiment 3:
1) ceramic substrate cleaned up in deionized water and dry up;
2) the nickel metal of thermal evaporation deposition 80 nanometer thickness is utilized on a ceramic substrate;
3) on nickel metal layer, utilize chemical bath method to deposit the cadmium-telluride layer of 7 micron thickness, and reserve the area of growth first electrode on nickel metal layer;
4) 5 layer graphenes are transferred on cadmium-telluride layer;
5) reserved area place silk screen printing silver electrode on graphene layer and on nickel metal layer; Obtain Graphene/cadmium-Te solar battery.
Embodiment 4:
1) ceramic substrate cleaned up in deionized water and dry;
2) 8 layer graphenes are transferred in ceramic substrate;
3) on graphene layer, utilize chemical bath method to deposit the cadmium-telluride layer of 5 micron thickness, and reserve the area of growth second electrode on graphene layer;
5) on Graphene, copper steam-plating electrode on area place and cadmium-telluride layer is reserved; Obtain Graphene/cadmium-Te solar battery.
Embodiment 5:
1) PETG (PET) substrate is cleaned up in deionized water and dries up;
2) 3 layer graphenes are transferred on above-mentioned PET substrate;
3) on graphene layer, utilize the cadmium-telluride layer of vapour pressure techniques of deposition 8 micron thickness, and reserve the area of growth second electrode on graphene layer;
4) reserve the combination electrode of area place thermal evaporation palladium, silver, titanium at graphene layer, and on cadmium-telluride layer thermal evaporation copper electrode; Obtain the Graphene/cadmium-Te solar battery of flexible double-sided generating.
Embodiment 6:
1) silicon carbide substrates cleaned up in deionized water and dry up;
2) Al-Doped ZnO of metal organic chemical vapor deposition 150 nanometer thickness is utilized on silicon carbide substrates;
3) on Al-Doped ZnO layer, utilize the cadmium-telluride layer of vapour pressure techniques of deposition 3 micron thickness, and reserve the area of growth first electrode on Al-Doped ZnO layer;
4) 6 layer graphenes are transferred on cadmium-telluride layer;
5) on graphene layer and Al-Doped ZnO layer reserve the combination electrode of area place thermal evaporation chromium, nickel; Obtain Graphene/cadmium-Te solar battery.
Claims (6)
1. Graphene/cadmium-Te solar battery, it is characterized in that having substrate (1), conduction film plating layer (2), cadmium-telluride layer (3) and graphene layer (4) from bottom to top successively, described solar cell is also provided with the first electrode (5) and the second electrode (6), first electrode (5) is arranged in conduction film plating layer (2), and the second electrode (6) is arranged on graphene layer (4); Or there are substrate (1), graphene layer (4) and cadmium-telluride layer (3) from bottom to top successively, also be provided with the first electrode (5) and the second electrode (6), first electrode (5) is arranged on cadmium-telluride layer (3), and the second electrode (6) is arranged on graphene layer (4).
2. Graphene/cadmium-Te solar battery according to claim 1, it is characterized in that described conduction film plating layer (2) is metal, ITO, FTO, N-shaped doping zinc-oxide or p-type doping zinc-oxide.
3. Graphene/cadmium-Te solar battery according to claim 1, is characterized in that the Graphene in described graphene layer (4) is 1-10 layer.
4. Graphene/cadmium-Te solar battery according to claim 1, is characterized in that described substrate (1) is rigid substrate or flexible substrate.
5. Graphene/cadmium-Te solar battery according to claim 1, it is characterized in that described the first electrode (5) is the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel, described the second electrode (6) is the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel.
6. the method for the Graphene/cadmium-Te solar battery of preparation as described in any one of claim 1 ~ 5, is characterized in that comprising the steps:
Upper growth conduction film plating layer (2) of the substrate (1) of cleaning; In conduction film plating layer (2), deposit cadmium-telluride layer (3) again, and reserve the area of growth first electrode (5) on conduction film plating layer (2) surface, then Graphene is transferred on cadmium-telluride layer (3), cadmium-telluride layer obtains graphene layer (4); At reserved area place deposition of first electrode (5) of conduction film plating layer (2), at upper deposition second electrode (6) of graphene layer (4);
Or Graphene is transferred on clean substrate (1), substrate shifts graphene layer (4); Graphene layer (4) deposits cadmium-telluride layer (3), and reserves the area of growth second electrode (6) on graphene layer (4) surface; At the upper deposition of first electrode (5) of cadmium-telluride layer (3), at graphene layer (4), upper reserved area place deposits the second electrode (6).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966758A (en) * | 2015-06-11 | 2015-10-07 | 上海电力学院 | Schottky flexible photovoltaic device based on graphene |
| CN108231922A (en) * | 2018-01-12 | 2018-06-29 | 莆田市超维二维科技发展有限公司 | A kind of novel graphite alkene photovoltaic cell |
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| CN101299443A (en) * | 2008-06-17 | 2008-11-05 | 四川大学 | Flexible cadmium telluride thin-film solar cell structure |
| KR101059072B1 (en) * | 2010-07-09 | 2011-08-24 | 성균관대학교산학협력단 | Solar cell using graphene and method of manufacturing the same |
| CN102376787A (en) * | 2011-11-04 | 2012-03-14 | 电子科技大学 | Graphene solar cell and preparation method thereof |
| CN103946986A (en) * | 2011-11-14 | 2014-07-23 | 太平洋银泰格拉泰德能源公司 | Devices, systems and methods for electromagnetic energy collection |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01168071A (en) * | 1987-12-23 | 1989-07-03 | Matsushita Electric Ind Co Ltd | Manufacture of photovoltaic device |
| CN101299443A (en) * | 2008-06-17 | 2008-11-05 | 四川大学 | Flexible cadmium telluride thin-film solar cell structure |
| KR101059072B1 (en) * | 2010-07-09 | 2011-08-24 | 성균관대학교산학협력단 | Solar cell using graphene and method of manufacturing the same |
| CN102376787A (en) * | 2011-11-04 | 2012-03-14 | 电子科技大学 | Graphene solar cell and preparation method thereof |
| CN103946986A (en) * | 2011-11-14 | 2014-07-23 | 太平洋银泰格拉泰德能源公司 | Devices, systems and methods for electromagnetic energy collection |
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| CN104966758A (en) * | 2015-06-11 | 2015-10-07 | 上海电力学院 | Schottky flexible photovoltaic device based on graphene |
| CN108231922A (en) * | 2018-01-12 | 2018-06-29 | 莆田市超维二维科技发展有限公司 | A kind of novel graphite alkene photovoltaic cell |
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