CN106159003A - A kind of photovoltaic devices and a kind of method producing photovoltaic effect - Google Patents
A kind of photovoltaic devices and a kind of method producing photovoltaic effect Download PDFInfo
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- CN106159003A CN106159003A CN201510164655.7A CN201510164655A CN106159003A CN 106159003 A CN106159003 A CN 106159003A CN 201510164655 A CN201510164655 A CN 201510164655A CN 106159003 A CN106159003 A CN 106159003A
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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Abstract
The invention provides a kind of photovoltaic devices, including light source and photovoltaic device, described photovoltaic device includes high resistance light gain semi-conductor substrate, it is positioned at the graphene layer on described high resistance light gain semi-conductor substrate, it is positioned at the first electrode on described high resistance light gain semi-conductor substrate and described graphene layer and the second electrode, wherein, a part for described first electrode and described high resistance light gain semi-conductor substrate contact, another part contacts with described graphene layer, a part for described second electrode and described high resistance light gain semi-conductor substrate contact, another part contacts with described graphene layer, wherein, the energy of the light that described light source is launched is more than the band gap of described high resistance light gain semi-conductor substrate.This photovoltaic devices makes full use of the advantage of each ingredient, and photoelectric transformation efficiency is high.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of photovoltaic devices and a kind of generation light
The method of volt effect.
Background technology
Since the scientist Ba Ding (John Bardeen) of nineteen forty-seven AT&T Labs and Bradley pause (Walter
Brattain), after having invented semiconductor transistor, PN junction is as the basic knot of modem semi-conductor devices
Structure unit is widely used in modern semiconductors photoelectric subassembly and system.Former based on PN junction
The photovoltaic effect of reason, AT&T Labs was made that photoelectric transformation efficiency was 6% for the first time in 1954
Practical monocrystal silicon photovoltaic cell, has started new era of photovoltaic generation.Since over half a century, all
The photovoltaic device of development and utilization all follows this principle.But, conventional semiconductors PN junction complexity
Device technology and bigger device size limit it and extensively apply, especially at micro-nano device and flexible device
The application of part has bigger limitation.
Along with the appearance of Graphene New Two Dimensional material, photoelectric properties and only list that Graphene is excellent are former
The thickness of sublayer is that device based on Graphene provides chance.Thomas Mueller in 2010 etc.
" the Graphene photodetectors for high-speed that people delivers on nature Photonics
Optical communications " and Rujie Sun in 2013 et al. at Applied Physics
" the Tunable photoresponse of epitaxial graphene on SiC " delivered on Letters public affairs respectively
Open a kind of photovoltaic device based on Graphene, but in this two documents, the generation of photovoltaic effect is all
Based on light pyroelectric effect, it is desirable to the substrate of photovoltaic device does not has Absorption to exposure light as far as possible, this
Sample just greatly limit the range of choice of light source.Meanwhile, absorption to exposure light is in the above documents
Realized by metal or Graphene.Feature and Graphene monoatomic layer due to light pyroelectric effect
Thick feature, in prior art, the absorbance of exposure light is only had by photovoltaic device based on Graphene
2.3%, photoelectric transformation efficiency is low.
Summary of the invention
Therefore, it is an object of the invention to overcome above-mentioned deficiency of the prior art, it is provided that Yi Zhongchong
Dividing utilizes the highly sensitive photovoltaic of each ingredient (including substrate, metal electrode and Graphene) advantage to fill
Putting, including light source and photovoltaic device, described photovoltaic device includes high resistance light gain semi-conductor substrate, position
Graphene layer on described high resistance light gain semi-conductor substrate, is positioned at described high resistance light gain semi-conductor lining
The first electrode at the end and described graphene layer and the second electrode, wherein, a part for described first electrode
With described high resistance light gain semi-conductor substrate contact, another part contacts with described graphene layer, and described
A part for two electrodes and described high resistance light gain semi-conductor substrate contact, another part and described Graphene
Layer contact, wherein, the energy of the light that described light source is launched is more than described high resistance light gain semi-conductor substrate
Band gap.
Photovoltaic devices according to the present invention, it is preferable that described high resistance light gain semi-conductor substrate is that high resistant has
Machine quasiconductor or high resistant inorganic semiconductor.
Photovoltaic devices according to the present invention, it is preferable that described high resistance light gain semi-conductor substrate is single piece
Body or the semi-insulating thin film being grown on substrate.
Photovoltaic devices according to the present invention, it is preferable that described light source is ultraviolet source, described high resistance light increases
Benefit Semiconductor substrate is SiC, or described light source is visible light source, and described high resistance light gain semi-conductor serves as a contrast
The end is GaP or GaAs.
Photovoltaic devices according to the present invention, it is preferable that the thickness of described high resistance light gain semi-conductor substrate
More than 50nm.
Photovoltaic devices according to the present invention, it is preferable that described graphene layer is in described first electrode and institute
State the second interelectrode length more than 3 μm.
Photovoltaic devices according to the present invention, it is preferable that described first electrode and described second electrode are gold
Belong to electrode.
Photovoltaic devices according to the present invention, it is preferable that the electronic work function of described metal electrode is with described
The difference of the electronic work function of high resistance light gain semi-conductor substrate is more than 0.1eV.
Photovoltaic devices according to the present invention, it is preferable that described first electrode and described second electrode use
Identical metal.
Photovoltaic devices according to the present invention, it is preferable that also include described first electrode or described second
Lighttight coat on electrode.
Photovoltaic devices according to the present invention, it is preferable that also include being respectively electrically connected to described first electrode
The first lead-in wire and the second lead-in wire with described second electrode.
Photovoltaic devices according to the present invention, it is preferable that also include serving as a contrast described high resistance light gain semi-conductor
The end, described graphene layer, described first and second electrodes and described first and second lead-in wires seal
The encapsulating housing of dress, wherein said encapsulating housing has logical light window.
Present invention also offers a kind of method producing photovoltaic effect, including using light irradiation photovoltaic device
Part, described photovoltaic device includes high resistance light gain semi-conductor substrate, is positioned at described high resistance light gain semi-conductor
Graphene layer on substrate, be positioned on described high resistance light gain semi-conductor substrate and described graphene layer
One electrode and the second electrode, wherein, a part for described first electrode and described high resistance light gain semi-conductor
Substrate contact, another part contacts with described graphene layer, a part for described second electrode and described height
Light blocking gain semi-conductor substrate contact, another part contacts with described graphene layer, and described method includes:
Described photovoltaic device is irradiated more than the light source of described high resistance light gain semi-conductor substrate band gap with the energy of its light
Part.
Compared with prior art, the photovoltaic devices of the present invention takes full advantage of the support lining of graphene device
The end, contrasts effective absorption of the high exposure light of its band-gap energy, and a large amount of carriers of generation are quickly transferred to
On the metal electrode of graphene device, if the suitable configurations of photovoltaic devices makes in Graphene electrodes two
End sets up voltage difference, will produce photovoltaic effect.Owing to the support substrate of graphene device is body material
Or thin-film material, it is strong to the absorption of exposure light.Relative to prior art, the photovoltaic of the present invention
The photovoltaic effect of device becomes apparent from, and photoelectric transformation efficiency is higher.The photovoltaic devices of the present invention can extensively be answered
Flexible, the photovoltaic components and parts of micro/nano-scale for the preparation of organic and inorganic semiconductor material system.Especially
Being in a short-circuit situation, this photovoltaic devices is alternatively arranged as the optical detection ultrafast, sensitive without external power source
Device.
Accompanying drawing explanation
Referring to the drawings embodiments of the invention are described further, wherein:
Fig. 1 is the schematic diagram of the cross section structure of the photovoltaic devices according to the present invention；
Fig. 2 is the top view of photovoltaic device 100 in the photovoltaic devices shown in Fig. 1, not shown lead-in wire；
Fig. 3 is the band structure schematic diagram of metal electrode Ti and SiC heterojunction boundary, wherein EC、
EVAnd EFRepresent the conduction band of SiC, valence band and fermi level respectively；
Fig. 4 is to have Graphene and the band structure schematic diagram of metal electrode Ti under light conditions, wherein,
Δ E is at the photoirradiation that photon energy is h ν (its energy is more than the band gap of high resistance light gain semi-conductor)
In the case of left electrodes, the fermi level produced at Graphene two ends is poor；
Fig. 5 is Graphene and the band structure schematic diagram of metal electrode Ti in the case of unglazed photograph；
Fig. 6 is the band structure schematic diagram of Graphene and SiC heterojunction boundary；
Fig. 7 is that the photovoltaic device of the concrete example of present invention photocurrent response under short circuit condition is bent
Line；
Fig. 8 is the schematic top plan view of the photovoltaic device structure in the photovoltaic devices of another example of the present invention；
Fig. 9 is the cross section structure signal of the photovoltaic device structure in the photovoltaic devices of the another example of the present invention
Figure.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage are clearer, below in conjunction with accompanying drawing
By specific embodiment, the present invention is described in more detail.Should be appreciated that described herein specifically
Embodiment only in order to explain the present invention, is not intended to limit the present invention.
In order to make full use of and excavate the effect of all participation parts in photovoltaic device based on Graphene,
The present invention proposes a kind of substrate photovoltaic devices absorbable to exposure light.Thickness due to backing material
Being far longer than the thickness of metal electrode or Graphene, its photoproduction producing the efficient absorption of exposure light carries
Stream can be quickly transferred under the effect of substrate/metal interface electric field and substrate/Graphene Interface electric field
Metal electrode or Graphene, cause metal electrode or the change of Graphene fermi level.Non-by using
Symmetrical metal electrode or asymmetrical exposure light, the photovoltaic devices of the present invention is absorbable at substrate
Under the irradiation of exposure light, between the metal electrode at Graphene two ends, quickly set up voltage, thus produce
Photovoltaic voltage.And the present inventors have additionally discovered that, the photovoltaic voltage that the photovoltaic devices of the present invention produces is actual
On be that substrate absorbs the folded of the light pyroelectric effect of photovoltaic effect and metal electrode and the Graphene produced
The result added, and the latter compares the former and almost can ignore, so the light of the photovoltaic devices of the present invention
Photoelectric transformation efficiency is far above the photoelectric transformation efficiency of the photovoltaic device of prior art.
First embodiment
Fig. 1 shows the schematic diagram of the cross section structure of the photovoltaic devices according to the present invention, including photovoltaic device
Part 100 and the light source 200 for irradiation photovoltaic device 100, photovoltaic device 100 includes high resistance light gain
Semiconductor substrate 1, is positioned at the graphene layer 2 on high resistance light gain semi-conductor substrate 1, is positioned at high resistance light
The first electrode 31 and the second electrode 32 on gain semi-conductor substrate 1 and graphene layer 2, and respectively
First, second lead-in wire 41,42 electrically connected with first, second electrode 31,32, wherein, the first electricity
A part for pole 31 contacts with high resistance light gain semi-conductor substrate 1, and another part connects with graphene layer 2
Touching, a part for the second electrode 32 contacts with high resistance light gain semi-conductor substrate 1, another part and stone
Ink alkene layer 2 contacts.Fig. 2 is the top view of photovoltaic device 100 in the photovoltaic devices shown in Fig. 1, its
Not shown in first, second lead-in wire 41,42.,
In the photovoltaic devices of the present invention, the high resistance light gain semi-conductor substrate 1 of photovoltaic device is except as stone
Outside the support substrate of ink alkene layer 2 and first, second electrode 31,32, it is often more important that by high resistance light
Gain semi-conductor substrate 1 is partly led more than high resistance light gain as sensitive material, the energy sent when light source
When the light of body substrate band gap is irradiated on prepared photovoltaic device, high resistance light gain semi-conductor substrate is relatively
Big absorber of light is amassed and is enhanced the absorption contrasting the high photon energy of its band-gap energy, thus at high resistant
Gain of light Semiconductor substrate produces substantial amounts of photo-generated carrier.
In the photovoltaic devices of the present invention, the electrode 31 and 32 of photovoltaic device is except the photovoltaic as the present invention
Outside the two end electrodes of device, also receive from high resistance light gain semi-conductor substrate 1 to electrode 31 or electrode
The photo-generated carrier of 32 transfers.According to one embodiment of present invention, it is preferable that electrode 31 and 32
For metal electrode.It is further preferred that the electronic work function of metal electrode serves as a contrast with high resistance light gain semi-conductor
The electronic work function difference at the end relatively big (its difference should be greater than 0.1eV).Owing to fermi level increases at high resistance light
Benefit semi-conducting material and the balance requirement of metal electrode interface, be formed with beneficially photoproduction and carry in interface
The electric field that stream is drifted about to metal electrode by high resistance light gain semi-conductor substrate.This built in field contributes to
Photo-generated carrier by high resistance light gain semi-conductor substrate to metal electrode fast transfer.People in the art
Member causes high resistance light gain semi-conductor substrate at the two ends of graphene layer 2 it will be understood that work as illumination
When electrode 31 is different with the speed shifting carrier on 32, may result in the two ends at graphene layer 2
Produce Fermi's energy extreme difference on electrode, thus produce photovoltaic effect.But, in order under light conditions
Different fermi levels is formed on electrode 31 and 32 at the two ends of graphene layer 2, can be by following two
Kind of situation realizes: first, and electrode 31 and 32 is symmetrical, i.e. electrode 31 and 32 material category and
Area on high resistance light gain semi-conductor substrate is the most identical, and in this case, the light that light source sends is only
Irradiate in two electrodes 31 or 32, the fermi level of illuminated electrode will be made to become
Change, so that two electrodes produce Fermi's energy extreme difference, it should be understood readily by those skilled in this art, and also may be used
To coat light non-transmittable layers on one of two electrodes, at this moment, the light that light source sends is uniformly irradiated with whole
Device will make two electrodes produce Fermi can extreme difference.It is of course also possible to understand, if light source is bag
Light sources containing two light sources that transmitting is not shared the same light, or by other beam splitting device, light source is sent
Light be divided into two different bundles, two restraint different light is respectively radiated on two electrodes 31 and 32, also
Two electrodes can be made to produce fermi level poor；Second, electrode 31 and 32 is asymmetric, i.e. electrode 31
Different with the material of 32 or areas on high resistance light gain semi-conductor substrate different or both
Difference, in this case, the light sending light source irradiates whole device or single electrode does not limit,
The most simply, a branch of uniform light that light source sends irradiates whole device.It will be apparent that former feelings
The device preparation technology of condition is simpler, it is easier to operation.
In the photovoltaic devices of the present invention, the graphene layer 2 of photovoltaic device is as two interelectrode connection matchmakers
Being situated between, its size (including length and width) between two electrodes 31,32 directly affects photovoltaic
The size of voltage.In principle, the graphene layer between two electrodes 31,32 is the longest and the narrowest, its
Photovoltaic effect is the most prominent.Meanwhile, graphene layer 2 also receives from high resistance light gain semi-conductor substrate 1 turn
The photo-generated carrier moved so that it is fermi level changes, thus affect the response rule of short-circuit photocurrent
Rule.Detecting based on short-circuit photocurrent, this photovoltaic device may act as ultrafast photo-detector.
Below by way of the photovoltaic devices specifically illustrating the present invention.
The concrete example of the photovoltaic devices of the present invention is described with reference to Fig. 1, and it includes photovoltaic device 100 He
Ultraviolet source 200, photovoltaic device 100 includes SiC substrate 1, is positioned at the graphite in SiC substrate 1
Alkene layer 2, Ti the metal electrode 31 and Ti metal electrode being positioned on SiC substrate 1 and graphene layer 2
A part for 32, Ti metal electrodes 31 contacts with SiC substrate 1, another part and graphene layer 2
Contact, and Ti metal electrode 32 part contacts with SiC substrate 1, another part and Graphene
Layer 2 contact.Wherein, the thickness of SiC substrate 1 is 350 μm；Graphene layer between two electrodes
Length × a width of 100 μ m 10 μm.
Experiment finds: if energy is mapped to prepared photovoltaic device more than the ultraviolet lighting of SiC band gap
On one of them electrode, it is possible to the electron transition in exciting irradiation district SiC valence band is to conduction band.And at SiC
The photo-generated carrier of middle generation under the Interface electric field effect of SiC and metal electrode (metal Ti) (such as figure
Shown in 3), it is quickly transferred on the metal electrode that ultraviolet light irradiates, cause that Graphene contacts with metal two
Electric potential energy poor (as shown in Figure 4) is there is between fermi level at termination electrode, thus can at electrode two ends
To produce the voltage difference of tens the most hundreds of millivolts.As a comparison, Fig. 5 shows unglazed stone in the case of shining
Ink alkene and the band structure schematic diagram of metal electrode.
It addition, at Graphene with the heterojunction boundary of SiC formation, the photoproduction current-carrying produced in SiC
Son is equally transferred in Graphene by the conduction band of SiC.Yet with Graphene electronic work function with
The electronic work function of SiC is close, band curvature at the heterojunction boundary of Graphene and SiC less (as
Shown in Fig. 6), the electrons backflow that the electron energy in Graphene is close with the valence-band electrons energy of SiC
To the valence band of SiC, cause the quantity of clean carrier in Graphene constant or change is less.Fig. 7 is short
Under the conditions of road, in the case of the ultraviolet light of the 325nm of different capacity only irradiation broad-area electrode 31,
Photocurrent response curve (curve from the bottom to top correspond respectively to 0mW (unglazed), 2mW, 3mW,
Photocurrent response rule under the ultraviolet light irradiation of 5mW and 10mW), each bar curve and the intersection point of transverse axis
The size of the applied voltage value that place is corresponding is i.e. equal to the size of photovoltaic voltage produced by photovoltaic device.
Fig. 8 be another example of the present invention photovoltaic devices in the structural representation of photovoltaic device.At this
In example, unshowned light source is the green glow that energy is more than the 532nm of 2.3eV；High resistance light gain
Semiconductor substrate uses GaP single-chip；First electrode 31 is Ti metal, and the second electrode 32 is Pt
Metal.Wherein, the thickness of GaP single-chip is 300 μm；The area of the first electrode 31 and the second electricity
The area equation of pole 32；The length of graphene layer × a width of 10 μ m 3 μm between two electrodes.
Fig. 9 be the another example of the present invention photovoltaic devices in the structural representation of photovoltaic device.At this
In example, unshowned light source is the HONGGUANG that energy is more than the 632nm of 1.42eV；High resistance light gain
Semiconductor substrate uses epitaxial growth Semi-insulating GaAs thin film on a si substrate；First electrode 31
It is all Ti metal with the second electrode 32.Wherein, the thickness of GaAs thin film is 100nm；Two electrodes it
Between length × a width of 5 μ m 3 μm of graphene layer.
According to other examples of the present invention, the material of high resistance light gain semi-conductor substrate is organic or inorganic
Semi-conducting material, the thickness of substrate is more than 50nm；
It is identical metal according to other examples of the present invention, the first electrode and the second electrode, it is preferred that
Light non-transmittable layers is coated on one of them electrode on high resistance light gain semi-conductor substrate.Art technology
Personnel are appreciated that in the present invention, and the shape of electrode is not made any restriction；
According to the metal that other examples of the present invention, the first electrode and the second electricity are extremely different.Preferably,
If the electronic work function of two electrodes is smaller than the electronic work function of high resistance light gain semi-conductor 1, then
The light that light source sends should farthest be radiated at the metal electrode high resistant that electronic work function is relatively small
In gain of light Semiconductor substrate.If the work function of an electrode is less than high resistance light gain semi-conductor 1
Work function, and the electronic work function of another electrode is more than the electronics work content of high resistance light gain semi-conductor 1
Number, then the light that light source sends radiation modality on two metal electrodes does not has strict restriction.Permissible
Mode well known in the art is used to realize radiation modality and the direction of light source beam emitted.
According to other examples of the present invention, between two metal electrodes, the length of graphene layer is more than
3μm。
According to other examples of the present invention, the photovoltaic device of the present invention can also include high resistance light gain
The encapsulating housing that Semiconductor substrate, graphene layer, electrode and lead-in wire are packaged, described encapsulating housing
There is logical light window.
In order to embody the effect of the present invention, inventor compares experiment, and employing power is 10mW
The photovoltaic of ultraviolet source (spot diameter is about 150 μm) the concrete example of the irradiation present invention of 325nm
One electrode of the photovoltaic device in device, test result indicate that generation photovoltaic voltage is of about 80 millis
Volt.It addition, use the photovoltaic devices of the concrete example of the visible light exposure present invention of 632nm, generation
Photovoltaic voltage is the most distinguishable.
In sum, the operation principle of the photovoltaic devices that the present invention provides is totally different from the light of prior art
Volt device, it is high that this photovoltaic devices fully utilizes high resistance light its band-gap energy of gain semi-conductor material contrast
In the efficient absorption of photon, high resistance light gain semi-conductor material, photo-generated carrier is quickly transferred to metal electrode
And Graphene, and it is poor to set up fermi level at Graphene electrodes two ends, thus realize photovoltaic effect.Short
Under the conditions of road, due to the electrons transport property that Graphene is excellent, it is possible to achieve the super fast response to exposure light
And sensitive detection.Therefore the photovoltaic device of the present invention can be as the optical detection ultrafast, sensitive without power supply
Device.
It addition, the high resistance light gain semi-conductor material of the photovoltaic devices of the present invention can be organic semiconductor,
Inorganic semiconductor thin-film material, range of choice width；The choice of metal electrode material is big；Photovoltaic devices
Device technology simple, size is little, and good with existing lsi technology compatibility, is manufactured into
This is cheap.
Although the present invention has been described by means of preferred embodiments, but the present invention is not limited to
Embodiment as described herein, the most also includes done various
Change and change.
Claims (13)
1. a photovoltaic devices, including light source and photovoltaic device, described photovoltaic device includes that high resistance light increases
Benefit Semiconductor substrate, is positioned at the graphene layer on described high resistance light gain semi-conductor substrate, is positioned at described height
The first electrode on light blocking gain semi-conductor substrate and described graphene layer and the second electrode, wherein, described
A part for first electrode and described high resistance light gain semi-conductor substrate contact, another part and described graphite
Alkene layer contacts, a part for described second electrode and described high resistance light gain semi-conductor substrate contact, another
Part contacts with described graphene layer, and wherein, the energy of the light that described light source is launched is more than described high resistance light
The band gap of gain semi-conductor substrate.
Photovoltaic devices the most according to claim 1, it is characterised in that: described high resistance light gain half
Conductor substrate is high resistant organic semiconductor or high resistant inorganic semiconductor.
Photovoltaic devices the most according to claim 1, it is characterised in that: described high resistance light gain half
Conductor substrate is single block or the semi-insulating thin film being grown on substrate.
Photovoltaic devices the most according to claim 1, it is characterised in that: described light source is ultraviolet light
Source, described high resistance light gain semi-conductor substrate is SiC, or described light source is visible light source, described height
Light blocking gain semi-conductor substrate is GaP or GaAs.
5. according to photovoltaic devices in any one of the preceding claims wherein, it is characterised in that: described height
The thickness of light blocking gain semi-conductor substrate is more than 50nm.
Photovoltaic devices the most according to claim 1, it is characterised in that: described graphene layer is in institute
State the first electrode and described second interelectrode length more than 3 μm.
Photovoltaic devices the most according to claim 1, it is characterised in that: described first electrode and institute
Stating the second electrode is metal electrode.
Photovoltaic devices the most according to claim 7, it is characterised in that: the electricity of described metal electrode
Sub-work function is more than 0.1eV with the difference of the electronic work function of described high resistance light gain semi-conductor substrate.
9. according to the photovoltaic devices described in claim 7 or 8, it is characterised in that: described first electrode
Identical metal is used with described second electrode.
Photovoltaic devices the most according to claim 9, it is characterised in that: also include described first
Lighttight coat on electrode or described second electrode.
11. photovoltaic devices according to claim 1, also include being respectively electrically connected to described first
First lead-in wire and second of electrode and described second electrode goes between.
12. photovoltaic devices according to claim 11, also include partly leading described high resistance light gain
Body substrate, described graphene layer, described first and second electrodes and described first and second go between into
The encapsulating housing of row encapsulation, wherein said encapsulating housing has logical light window.
13. 1 kinds of methods producing photovoltaic effect, including using light irradiation photovoltaic device, described light
Volt device includes high resistance light gain semi-conductor substrate, is positioned at the stone on described high resistance light gain semi-conductor substrate
Ink alkene layer, is positioned at the first electrode on described high resistance light gain semi-conductor substrate and described graphene layer and the
Two electrodes, wherein, a part for described first electrode and described high resistance light gain semi-conductor substrate contact,
Another part contacts with described graphene layer, a part for described second electrode and described high resistance light gain half
Conductor substrate contact, another part contacts with described graphene layer, and described method includes: with the energy of its light
Amount irradiates described photovoltaic device more than the light source of the band gap of described high resistance light gain semi-conductor substrate.
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| WO2021065884A1 (en) * | 2019-09-30 | 2021-04-08 | 学校法人慶應義塾 | Graphene photodetector and method for producing same |
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| CN101090138A (en) * | 2007-07-02 | 2007-12-19 | 重庆大学 | P+PIN silicon photoelectric probe |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108231922A (en) * | 2018-01-12 | 2018-06-29 | 莆田市超维二维科技发展有限公司 | A kind of novel graphite alkene photovoltaic cell |
| WO2021065884A1 (en) * | 2019-09-30 | 2021-04-08 | 学校法人慶應義塾 | Graphene photodetector and method for producing same |
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