CN108231823B - Niobium oxide gating device based on zirconium oxide tunneling layer and manufacturing method thereof - Google Patents
Niobium oxide gating device based on zirconium oxide tunneling layer and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a niobium oxide gating device based on a zirconium oxide tunneling layer and a manufacturing method thereof. The gating device comprises a bottom electrode layer, a zirconium oxide tunneling layer, a niobium oxide conversion layer and a top electrode layer from bottom to top in sequence; the thickness of the bottom electrode layer is 50-300 nm, the thickness of the tunneling layer is 1-5 nm, the thickness of the conversion layer is 30-100 nm, the thickness of the top electrode layer is 50-300 nm, and the tunneling layer, the conversion layer and the top electrode layer are all formed by adopting a magnetron sputtering method. According to the invention, the ultrathin zirconium oxide tunneling layer is additionally arranged between the niobium oxide conversion layer and the bottom electrode layer, the zirconium oxide tunneling layer effectively reduces the operating current and the operating voltage of the device, the use power consumption of the device can be obviously reduced, the high-resistance value is increased, and the nonlinearity is improved.
Description
Technical Field
The invention relates to an information storage technology, in particular to a niobium oxide gating device based on a zirconium oxide tunneling layer and a manufacturing method thereof.
Background
The traditional polysilicon flash memory technology faces a series of technical limits and theoretical limits after continuously shrinking to a technical node below 20nm, and is difficult to meet the storage requirement of ultrahigh density, so that the development of a novel storage technology becomes an urgent need of a next-generation high-density storage device. The Resistive Random Access Memory (RRAM) has the advantages of small unit size, simple device structure, high operation speed, low power consumption, good micro-shrinkage, easy integration and the like, becomes a powerful competitor of the next-generation non-volatile memory technology, and has wide application prospect. However, RRAM has significant cross-talk problems during integration, thereby causing misreading of stored information, resulting in lack of information. Based on this, the selection device becomes the inevitable choice for RRAM integration. The selector comprises a silicon-based gate tube, an oxide barrier gate tube, a threshold switch gate tube, a mixed ion-electron conductor gate tube, a field-assisted nonlinear gate tube and the like. The gate tube (seletor) can be regarded as a nonlinear resistor, the resistance difference of the gate tube under low voltage and high voltage is very large, and the gate tube has a difference of several orders of magnitude, so that the gate tube can be widely applied to a 3D storage integrated framework including phase change storage to form a 1S1R structure. The 1S1R structure is characterized in that a resistive random access memory and a bidirectional strobe device are connected in series to form a memory unit, crosstalk current is suppressed, the size of the device is the same as that of a single resistive random access device, and high-density integration of a crisscross array can be achieved.
However, the selection capability of the gate pipe directly determines the integration density of the memory. At present, the non-linearity of the gate tube is low, and the integration requirement of ultra-large scale storage cannot be met, so that the improvement of the non-linearity of the gate device becomes the primary target of research.
Disclosure of Invention
In view of the problems identified in the background art, the present invention is directed to a niobium oxide gating device based on a zirconium oxide tunneling layer and a method for manufacturing the same, in which an ultra-thin zirconium oxide tunneling layer is added between niobium oxide and a bottom electrode, thereby improving the nonlinearity of the gating device.
In order to achieve the first object of the present invention, the inventors have conducted extensive experimental studies to develop a gate device made of niobium oxide based on a tunneling layer of zirconium oxide, the gate device comprising, from bottom to top, a bottom electrode layer, a tunneling layer, a conversion layer and a top electrode layer, wherein: the bottom electrode layer is made of any one of FTO, ITO, ZTO or TiN materials, the tunneling layer is made of a zirconia film material, the conversion layer is made of a niobium oxide film material, the top electrode layer is made of a Pt film material, and the niobium oxide is NbOx。
Further, the niobium oxide in the above technical solution is niobium pentoxide.
Further, in the technical scheme, the thickness of the bottom electrode layer is 50-300 nm, the thickness of the tunneling layer is 1-5 nm, the thickness of the conversion layer is 30-100 nm, and the thickness of the top electrode layer is 50-300 nm.
Furthermore, in the above technical solution, the bottom electrode layer, the tunneling layer, the conversion layer, and the top electrode layer are rectangular or square, and the side length is 100nm to 100 μm.
Furthermore, in the above technical solution, the bottom electrode layer, the tunneling layer, the conversion layer, and the top electrode layer are square, and the side length is 0.4 μm to 4 μm.
Another objective of the present invention is to provide a method for preparing the niobium oxide gating device based on the zirconium oxide tunneling layer, the method comprising the following steps:
(1) pretreating the surface of the film-carrying substrate with the bottom electrode;
(2) and sequentially depositing a zirconium oxide film tunneling layer, a niobium oxide film conversion layer and a metal platinum top electrode layer on the surface of the bottom electrode by utilizing a magnetron sputtering technology to prepare the niobium oxide gating device based on the zirconium oxide tunneling layer.
Further, the specific preparation processes of the tunneling layer, the conversion layer and the top electrode layer in the step (2) of the above technical scheme are as follows:
(a) respectively mounting a ceramic zirconia target, a ceramic niobium pentoxide target and a metal platinum target on magnetron sputtering equipment, and introducing argon gas serving as inert gas into a vacuum chamber of the magnetron sputtering equipment;
(b) preparing a tunneling layer: starting a magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a zirconium oxide tunneling layer on the surface of the bottom electrode layer under the condition of 100-140W of power, wherein the deposition time is 20-80 s, and closing the magnetron sputtering power supply after the deposition is finished;
(c) preparation of the conversion layer: starting a magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a niobium oxide conversion layer on the surface of the zirconium oxide tunneling layer in the step (b) under the condition that the power is 100-140W, wherein the deposition time is 600-2000 s, and closing the magnetron sputtering power supply after the deposition is finished;
(d) preparing a top electrode layer: and (3) starting a magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a metal platinum top electrode layer on the surface of the niobium oxide conversion layer in the step (c) under the condition that the power is 80-120W, wherein the deposition time is 200-1200 s, closing the magnetron sputtering power supply after the deposition is finished, and cooling to the room temperature to obtain the niobium oxide gating device based on the zirconium oxide tunneling layer.
Further, in the above technical scheme, the magnetron sputtering adopted in the steps (b) and (c) is radio frequency magnetron sputtering, and the magnetron sputtering adopted in the step (d) is direct current magnetron sputtering.
Further, in the technical scheme, the thickness of the bottom electrode layer is 50-300 nm, the thickness of the tunneling layer is 1-5 nm, the thickness of the conversion layer is 30-100 nm, and the thickness of the top electrode layer is 50-300 nm.
Further, in the above technical solution, the bottom electrode layer is made of any one of FTO, ITO, ZTO, or TiN materials.
Compared with the prior art, the invention has the advantages and beneficial effects that:
(1) according to the invention, zirconium oxide is adopted as a traditional High K material, an ultrathin zirconium oxide tunneling layer is additionally arranged between a niobium oxide conversion layer and a bottom electrode layer, the zirconium oxide tunneling layer effectively reduces the operating current and operating voltage of the device, the use power consumption of the device can be obviously reduced, the High-resistance value is increased, and the nonlinearity is improved, so that the niobium oxide gating device prepared by the method has a larger nonlinearity value, and meanwhile, the use power consumption of the device is low because the transition voltage is lower;
(2) the material has the characteristics of simple components and stable performance, and has larger nonlinear value, high on-state current density and stable electrical performance by introducing the material, so that the gating device prepared by the invention has development potential and application value;
(3) the invention adopts magnetron sputtering to prepare the niobium oxide film, and the process is simple, safe and reliable and compatible with the cmos process;
(4) the gating device unit using niobium oxide as the conversion layer has good cycle tolerance.
Drawings
Fig. 1 is a schematic diagram of a cell structure of a niobium oxide gating device based on a zirconium oxide tunneling layer according to embodiment 1 of the present invention;
FIG. 2 is a graph showing that the thickness of the film is 0.64 μm in example 1 of the present invention and that of comparative example 12Comparing the I-V test results of the square niobium oxide gating device;
FIG. 3 shows the results of example 2 of the present invention and comparative example 2 based on 1 μm2The correlation graph of the forming test result of the square niobium oxide gating device;
FIG. 4 shows the results of example 2 of the present invention and comparative example 2 based on 1 μm2The results of the I-V test of the square niobium oxide gated device of (a) are compared.
Detailed Description
The technical solution of the present invention is further explained in detail by the following specific examples and the accompanying drawings. The following embodiments are merely exemplary of the present invention, which is not intended to limit the present invention in any way, and those skilled in the art may modify the present invention in many ways by applying the teachings set forth above to equivalent embodiments with equivalent modifications. Any simple modification or equivalent changes made to the following embodiments according to the technical essence of the present invention, without departing from the technical spirit of the present invention, fall within the scope of the present invention.
Example 1
The niobium oxide gating device based on the zirconium oxide tunneling layer of the embodiment comprises a bottom electrode layer 1, a tunneling layer 2, a conversion layer 3 and a top electrode layer 4 from bottom to top in sequence, wherein the bottom electrode layer is made of TiN, and the tunneling layer is zirconium oxide (ZrO)2) The conversion layer is made of a niobium oxide thin film material, and the top electrode layer is made of a Pt thin film material; the thickness of the bottom electrode layer is 200nm, the thickness of the tunneling layer is 3nm, the thickness of the conversion layer is 45nm, and the thickness of the top electrode layer is 200 nm; the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are all square, the side length of each square is 0.8 mu m, and a schematic diagram of a unit structure of the gating device is shown in figure 1.
The niobium oxide gating device based on the zirconium oxide tunneling layer is prepared by the following method, and the method specifically comprises the following steps:
(1) for the area with TiN bottom electrode of 0.64 μm2The surface of the square film-carrying substrate is pretreated;
(2) respectively mounting a ceramic zirconia target, a ceramic niobium pentoxide target and a metal platinum target on magnetron sputtering equipment, and introducing argon gas serving as inert working gas into a vacuum chamber of the magnetron sputtering equipment;
(3) preparing a tunneling layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a zirconium oxide tunneling layer on the surface of the bottom electrode layer under the condition of 120W of power, wherein the deposition time is 80s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(4) preparation of the conversion layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a niobium oxide conversion layer on the surface of the zirconium oxide tunneling layer in the step (2) under the condition that the power is 120W, wherein the deposition time is 800s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(5) preparing a top electrode layer: starting a direct-current magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a metal platinum top electrode layer on the surface of the niobium oxide conversion layer in the step (3) under the condition that the power is 100W, wherein the deposition time is 900s, after the deposition is finished, closing the direct-current magnetron sputtering power supply, and cooling to room temperature to obtain the niobium oxide gating device based on the zirconium oxide tunneling layer, wherein each layer of the gating device is square, and the area of each layer is 0.64 mu m2。
Comparative example 1
The gate device of the present comparative example has the same construction and manufacturing method as those of the gate device of example 1 except that the gate device of the present comparative example does not include a tunneling layer, that is, the gate device of the present comparative example includes only a bottom electrode layer, a conversion layer, and a top electrode layer in this order from bottom to top, and the others are the same as those of example 1.
And (3) performance testing:
the gated devices prepared in example 1 and comparative example 1 were each subjected to an I-V test on an agilent B1500A semiconductor parametric analyzer test platform. Firstly, two probes are respectively contacted with a top electrode and a bottom electrode, then, Agilent B1500A test software is used for setting scanning voltage of-1.5V to +1.5V, the scanning voltage work cycle is divided into four parts, firstly, scanning is carried out from 0V to +1.5V, then, scanning is carried out from +1.5V to 0V, then, scanning is carried out from 0V to-1.5V, finally, scanning is carried out from-1.5V to 0V, the cycle is completed, the scanning step number of each part is 101, namely, the current is taken at 101 points when the voltage is scanned from 0V to +1.5V, the test result is shown in figure 2, the part in figure 2 is the I-V test result of the gating device of the embodiment 1, the dotted line part is the I-V test result of the gating device of the comparative example 1, and the dotted line part is the I-V test result of the gating device of2The gating device of the tunneling layer has the advantages that the nonlinear ratio is increased, the conversion voltage is reduced, the gating ratio and the conversion voltage of the device are obviously improved, and the anti-crosstalk capacity and the power consumption efficiency of the device are optimized.
Example 2
The niobium oxide gating device based on the zirconium oxide tunneling layer of the embodiment sequentially comprises a bottom electrode layer, a tunneling layer, a conversion layer and a top electrode layer from bottom to top, wherein the bottom electrode layer is made of TiN, and the tunneling layer is zirconium oxide (ZrO)2) The conversion layer is made of a niobium oxide thin film material, and the top electrode layer is made of a Pt thin film material; the thickness of the bottom electrode layer is 200nm, the thickness of the tunneling layer is 3nm, the thickness of the conversion layer is 45nm, and the thickness of the top electrode layer is 200 nm; the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are all square in shape, and the side length of each square is 1 micrometer.
The niobium oxide gating device based on the zirconium oxide tunneling layer is prepared by the following method, and the method specifically comprises the following steps:
(1) for the area with TiN bottom electrode of 1 μm2The surface of the square film-carrying substrate is pretreated;
(2) respectively mounting a ceramic zirconia target, a ceramic niobium pentoxide target and a metal platinum target on magnetron sputtering equipment, and introducing argon gas serving as inert working gas into a vacuum chamber of the magnetron sputtering equipment;
(3) preparing a tunneling layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a zirconium oxide tunneling layer on the surface of the bottom electrode layer under the condition of 120W of power, wherein the deposition time is 80s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(4) preparation of the conversion layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a niobium oxide conversion layer on the surface of the zirconium oxide tunneling layer in the step (2) under the condition that the power is 120W, wherein the deposition time is 800s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(5) preparing a top electrode layer: starting a direct-current magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a metal platinum top electrode layer on the surface of the niobium oxide conversion layer in the step (3) under the condition that the power is 100W, wherein the deposition time is 900s, closing the direct-current magnetron sputtering power supply after the deposition is finished, and cooling to room temperature to obtain the niobium oxide gating device based on the zirconium oxide tunneling layer, wherein each layer of the gating device is square, and the area of each layer is 1 mu m2。
Comparative example 2
The gate device of this comparative example has the same construction and manufacturing method as those of the gate device of example 2 except that the gate device of this comparative example does not include a tunneling layer, that is, the gate device of this comparative example includes only a bottom electrode layer, a conversion layer, and a top electrode layer in this order from bottom to top, and the others are the same as those of example 2.
And (3) performance testing:
the niobium oxide gated device on the zirconia tunneling layer prepared in this example was subjected to an I-V test on an agilent B1500A semiconductor parametric analyzer test platform. Firstly, two probes are respectively contacted with a top electrode and a bottom electrode, and then the scanning voltage of-1.5V- +1.5V is set and the scanning voltage is scanned by using Agilent B1500A test softwareOne cycle of the press work is divided into four parts, namely scanning from 0V to +1.5V, then scanning from +1.5V to 0V, then scanning from 0V to-1.5V, and finally scanning from-1.5V to 0V, thus completing one cycle, wherein the scanning step number of each part is 101, namely the current is taken at 101 points when the voltage is scanned from 0V to +1.5V, the forming test result is shown in figure 3, and the I-V test result is shown in figure 4, wherein: in fig. 3, the solid line part is a forming test result of the gate device of example 2, and the dotted line part is a forming test result of the gate device of comparative example 2; the solid line portion in fig. 4 is the I-V test result of the gate device of example 2, and the dotted line portion is the I-V test result of the gate device of comparative example 2. As can be seen from FIG. 4, the introduction of ultra-thin ZrO2The nonlinear ratio of the gating device of the tunneling layer is increased, the transition voltage is reduced, the gating ratio and the transition voltage of the device are obviously improved, and the anti-crosstalk capacity and the power consumption efficiency of the device are optimized.
Example 3
The niobium oxide gating device based on the zirconium oxide tunneling layer of the embodiment comprises a bottom electrode layer, a tunneling layer, a conversion layer and a top electrode layer from bottom to top in sequence, wherein the bottom electrode layer is made of an FTO material, and the tunneling layer is made of zirconium oxide (ZrO)2) The conversion layer is made of a niobium oxide thin film material, and the top electrode layer is made of a Pt thin film material; the thickness of the bottom electrode layer is 50nm, the thickness of the tunneling layer is 1nm, the thickness of the conversion layer is 30nm, and the thickness of the top electrode layer is 50 nm; the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are all square in shape, and the side length of each square is 100 nm.
The niobium oxide gating device based on the zirconium oxide tunneling layer is prepared by the following method, and the method specifically comprises the following steps:
(1) for the area with FTO bottom electrode of (100nm)2The surface of the square film-carrying substrate is pretreated;
(2) respectively mounting a ceramic zirconia target, a ceramic niobium pentoxide target and a metal platinum target on magnetron sputtering equipment, and introducing argon gas serving as inert working gas into a vacuum chamber of the magnetron sputtering equipment;
(3) preparing a tunneling layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a zirconium oxide tunneling layer on the surface of the bottom electrode layer under the condition of 100W of power, wherein the deposition time is 20s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(4) preparation of the conversion layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a niobium oxide conversion layer on the surface of the zirconium oxide tunneling layer in the step (2) under the condition that the power is 100W, wherein the deposition time is 600s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(5) preparing a top electrode layer: starting a direct-current magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a metal platinum top electrode layer on the surface of the niobium oxide conversion layer in the step (3) under the condition of the power of 80W, wherein the deposition time is 200s, after the deposition is finished, closing the direct-current magnetron sputtering power supply, and cooling to room temperature to obtain the niobium oxide gating device based on the zirconium oxide tunneling layer, wherein each layer of the gating device is square, and the area of each layer is (100nm)2。
Example 4
The niobium oxide gating device based on the zirconium oxide tunneling layer of the embodiment comprises a bottom electrode layer, a tunneling layer, a conversion layer and a top electrode layer from bottom to top in sequence, wherein the bottom electrode layer is made of an ITO (indium tin oxide) material, and the tunneling layer is zirconium oxide (ZrO)2) The conversion layer is made of a niobium oxide thin film material, and the top electrode layer is made of a Pt thin film material; the thickness of the bottom electrode layer is 300nm, the thickness of the tunneling layer is 5nm, the thickness of the conversion layer is 100nm, and the thickness of the top electrode layer is 300 nm; the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are all square in shape, and the side length of each square is 4 micrometers.
The niobium oxide gating device based on the zirconium oxide tunneling layer is prepared by the following method, and the method specifically comprises the following steps:
(1) for the area with the ITO bottom electrode of 16 μm2The surface of the square film-carrying substrate is pretreated;
(2) respectively mounting a ceramic zirconia target, a ceramic niobium pentoxide target and a metal platinum target on magnetron sputtering equipment, and introducing argon gas serving as inert working gas into a vacuum chamber of the magnetron sputtering equipment;
(3) preparing a tunneling layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a zirconium oxide tunneling layer on the surface of the bottom electrode layer under the condition of power of 140W, wherein the deposition time is 60s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(4) preparation of the conversion layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a niobium oxide conversion layer on the surface of the zirconium oxide tunneling layer in the step (2) under the condition that the power is 140W, wherein the deposition time is 2000s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(5) preparing a top electrode layer: starting a direct-current magnetron sputtering power supply, controlling the system pressure in a vacuum chamber to be 4Torr and the temperature to be 300K, depositing a metal platinum top electrode layer on the surface of the niobium oxide conversion layer in the step (3) under the condition that the power is 120W, wherein the deposition time is 1200s, after the deposition is finished, closing the direct-current magnetron sputtering power supply, and cooling to room temperature to obtain the niobium oxide gating device based on the zirconium oxide tunneling layer, wherein each layer of the gating device is square, and the area of each layer is 16 mu m2。
Example 5
The niobium oxide gating device based on the zirconium oxide tunneling layer of the embodiment comprises a bottom electrode layer, a tunneling layer, a conversion layer and a top electrode layer from bottom to top in sequence, wherein the bottom electrode layer is a ZTO material, and the tunneling layer is zirconium oxide (ZrO)2) The conversion layer is made of a niobium oxide thin film material, and the top electrode layer is made of a Pt thin film material; the thickness of the bottom electrode layer is 200nm, the thickness of the tunneling layer is 3nm, the thickness of the conversion layer is 45nm, and the thickness of the top electrode layer is 200 nm; the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are all positive in shapeSquare with side length of 0.4 μm.
The niobium oxide gating device based on the zirconium oxide tunneling layer is prepared by the following method, and the method specifically comprises the following steps:
(1) to the area with ZTO bottom electrode is 0.16 μm2The surface of the square film-carrying substrate is pretreated;
(2) respectively mounting a ceramic zirconia target, a ceramic niobium pentoxide target and a metal platinum target on magnetron sputtering equipment, and introducing argon gas serving as inert working gas into a vacuum chamber of the magnetron sputtering equipment;
(3) preparing a tunneling layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a zirconium oxide tunneling layer on the surface of the bottom electrode layer under the condition of 120W of power, wherein the deposition time is 80s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(4) preparation of the conversion layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a niobium oxide conversion layer on the surface of the zirconium oxide tunneling layer in the step (2) under the condition that the power is 120W, wherein the deposition time is 800s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(5) preparing a top electrode layer: starting a direct-current magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a metal platinum top electrode layer on the surface of the niobium oxide conversion layer in the step (3) under the condition that the power is 100W, wherein the deposition time is 900s, after the deposition is finished, closing the direct-current magnetron sputtering power supply, and cooling to room temperature to obtain the niobium oxide gating device based on the zirconium oxide tunneling layer, wherein each layer of the gating device is square, and the area of each layer is 0.16 mu m2。
Example 6
The niobium oxide gating device based on the zirconium oxide tunneling layer of the embodiment sequentially comprises a bottom electrode layer, a tunneling layer, a conversion layer and a top electrode layer from bottom to top, wherein the bottom electrode layer is made of TiN, and the tunneling layer is zirconium oxide (ZrO)2) Film material, thereforThe conversion layer is made of a niobium oxide thin film material, and the top electrode layer is made of a Pt thin film material; the thickness of the bottom electrode layer is 200nm, the thickness of the tunneling layer is 3nm, the thickness of the conversion layer is 45nm, and the thickness of the top electrode layer is 200 nm; the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are all square in shape, and the side length of each square is 100 micrometers.
The niobium oxide gating device based on the zirconium oxide tunneling layer is prepared by the following method, and the method specifically comprises the following steps:
(1) for the area with TiN bottom electrode of (100 μm)2The surface of the square film-carrying substrate is cleaned;
(2) respectively mounting a ceramic zirconia target, a ceramic niobium pentoxide target and a metal platinum target on magnetron sputtering equipment, and introducing argon gas serving as inert working gas into a vacuum chamber of the magnetron sputtering equipment;
(3) preparing a tunneling layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a zirconium oxide tunneling layer on the surface of the bottom electrode layer under the condition of 120W of power, wherein the deposition time is 80s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(4) preparation of the conversion layer: starting a radio frequency magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a niobium oxide conversion layer on the surface of the zirconium oxide tunneling layer in the step (2) under the condition that the power is 120W, wherein the deposition time is 800s, and closing the radio frequency magnetron sputtering power supply after the deposition is finished;
(5) preparing a top electrode layer: starting a direct-current magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a metal platinum top electrode layer on the surface of the niobium oxide conversion layer in the step (3) under the condition of 100W of power, wherein the deposition time is 900s, after the deposition is finished, closing the direct-current magnetron sputtering power supply, and cooling to room temperature to obtain the niobium oxide gating device based on the zirconium oxide tunneling layer, wherein each layer of the gating device is square, and the area of each layer is (100 mu m)2。
EXAMPLES 3E6 the prepared gating devices are respectively subjected to I-V tests, and the test results show that the prepared gating devices have good crosstalk resistance and excellent gating performance, so that the invention introduces ultrathin ZrO2The tunneling layer obviously improves the gating ratio and the conversion voltage of the device, and optimizes the anti-crosstalk capacity and the power consumption efficiency of the device.
Claims (6)
1. The utility model provides a niobium oxide gating device based on zirconia tunnel layer which characterized in that: the gating device sequentially comprises a bottom electrode layer, a tunneling layer, a conversion layer and a top electrode layer from bottom to top, wherein: the bottom electrode layer is made of any one of FTO, ITO, ZTO or TiN materials, the tunneling layer is made of a zirconia thin film material, the conversion layer is made of a niobium oxide thin film material, and the top electrode layer is made of a Pt thin film material; wherein: the thickness of the bottom electrode layer is 50-300 nm, the thickness of the tunneling layer is 1-5 nm, the thickness of the conversion layer is 30-100 nm, and the thickness of the top electrode layer is 50-300 nm; the tunneling layer, the conversion layer and the top electrode layer are all formed by adopting a magnetron sputtering method; the target material for preparing the conversion layer is niobium pentoxide.
2. The niobium oxide gating device based on a zirconium oxide tunneling layer of claim 1, wherein: the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are rectangular, and the side length is 100 nm-100 mu m.
3. The niobium oxide gating device based on a zirconium oxide tunneling layer of claim 2, wherein: the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are square, and the side length is 0.4-4 microns.
4. A method of making a niobium oxide gating device based on a zirconium oxide tunneling layer as claimed in claim 1, wherein: the method comprises the following steps:
(1) pretreating the surface of the film-carrying substrate with the bottom electrode;
(2) and sequentially depositing a zirconium oxide film tunneling layer, a niobium oxide film conversion layer and a metal platinum top electrode layer on the surface of the bottom electrode by utilizing a magnetron sputtering technology to prepare the niobium oxide gating device based on the zirconium oxide tunneling layer.
5. The method of claim 4, wherein the niobium oxide gating device comprises: the specific preparation process of the tunneling layer, the conversion layer and the top electrode layer in the step (2) is as follows:
(a) respectively mounting a ceramic zirconia target, a ceramic niobium pentoxide target and a metal platinum target on magnetron sputtering equipment, and introducing argon gas serving as inert gas into a vacuum chamber of the magnetron sputtering equipment;
(b) preparing a tunneling layer: starting a magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a zirconium oxide tunneling layer on the surface of the bottom electrode layer under the condition of 100-140W of power, wherein the deposition time is 20-80 s, and closing the magnetron sputtering power supply after the deposition is finished;
(c) preparation of the conversion layer: starting a magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a niobium oxide conversion layer on the surface of the zirconium oxide tunneling layer in the step (b) under the condition that the power is 100-140W, wherein the deposition time is 600-2000 s, and closing the magnetron sputtering power supply after the deposition is finished;
(d) preparing a top electrode layer: and (3) starting a magnetron sputtering power supply, controlling the system pressure in the vacuum chamber to be 4Torr and the temperature to be 300K, depositing a metal platinum top electrode layer on the surface of the niobium oxide conversion layer in the step (c) under the condition that the power is 80-120W, wherein the deposition time is 200-1200 s, closing the magnetron sputtering power supply after the deposition is finished, and cooling to the room temperature to obtain the niobium oxide gating device based on the zirconium oxide tunneling layer.
6. The method of claim 5, wherein the niobium oxide gating device comprises: the magnetron sputtering adopted in the step (b) and the step (c) is radio frequency magnetron sputtering, and the magnetron sputtering adopted in the step (d) is direct current magnetron sputtering.
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| CN111223986B (en) * | 2020-01-14 | 2023-09-12 | 湖北大学 | Silver intercalation gating device based on hafnium oxide transition layer and manufacturing method thereof |
| CN112289929B (en) * | 2020-10-20 | 2021-08-20 | 湖北大学 | Niobium oxide gate tube |
| CN112885868A (en) * | 2021-02-03 | 2021-06-01 | 湖北大学 | 1S1R device based on niobium oxide gate tube and preparation method thereof |
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