CN108539014B - Gating device based on niobium oxide and preparation method thereof - Google Patents
Gating device based on niobium oxide and preparation method thereof Download PDFInfo
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- CN108539014B CN108539014B CN201810392810.4A CN201810392810A CN108539014B CN 108539014 B CN108539014 B CN 108539014B CN 201810392810 A CN201810392810 A CN 201810392810A CN 108539014 B CN108539014 B CN 108539014B
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910000484 niobium oxide Inorganic materials 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims description 46
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 13
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 12
- 239000011265 semifinished product Substances 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- 238000005477 sputtering target Methods 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 239000011533 mixed conductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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Abstract
The invention provides a gating device based on niobium oxide, which sequentially comprises a bottom electrode, a conversion layer and a top electrode from bottom to top, wherein the bottom electrode is made of TiN or conductive glass, the conversion layer is made of niobium oxide, and the top electrode is made of platinum. The invention uses niobium oxide as a conversion layer, uses TiN or conductive glass as a bottom electrode and uses metal platinum as a top electrode to form the gating device based on the niobium oxide with excellent electrical stability. Experimental results show that the gating device provided by the invention has a small deviation degree of the obtained curve after being tested for 100 circles circularly, which shows that the gating device has excellent electrical stability.
Description
Technical Field
The invention relates to the technical field of electronic materials and components, in particular to a gating device based on niobium oxide and a preparation method thereof.
Background
With the advent of the cloud era, Big data (Big data) attracts more and more attention, and the corresponding Big data needs a large amount of storage space. The high-density cross lattice memory has wide market prospect as the powerful competitor of the next generation non-volatile memory device. However, one of the major drawbacks of this architecture is that leakage currents through adjacent memory cells can cause sneak path problems. These leakage currents can result in meaningless memory addressing and read errors. Sneak path problems also increase power consumption and limit the size of the crossbar array, which can severely impact memory performance.
The gating device has higher nonlinear value and on-state current density, reduces leakage current, and can overcome the sneak path problem, thereby meeting the requirement of high-density storage. The resistance transition mechanism of the gating device is closely related to the material properties of the constituent devices. Different types of dielectric materials cause the difference of resistance conversion polarity, nonlinear value and other properties, the range of the dielectric materials forming the gating device is very wide, the preparation methods of different materials are different, and each method has the application range. The method is generally divided into a silicon-based gate tube, an oxide barrier gate tube, a threshold switch gate tube, a mixed ion-electron conductor gate tube, a field-assisted nonlinear gate tube and the like.
The threshold switch gate tube can work under the current density compatible with the resistance switch memory device under the high-voltage operation, has a simple structure, and can generate high-low resistance volatile transformation by applying an electric field to realize the selective storage of data. However, the stability of the threshold switch gate tube in the prior art is poor, and the market demand cannot be met.
Disclosure of Invention
The invention aims to provide a gating device based on niobium oxide and a preparation method thereof. The gating device provided by the invention has excellent electrical stability.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a gating device based on niobium oxide, which sequentially comprises a bottom electrode, a conversion layer and a top electrode from bottom to top, wherein the bottom electrode is made of TiN or conductive glass, the conversion layer is made of niobium oxide, and the top electrode is made of platinum.
Preferably, the conductive glass is FTO conductive glass, ITO conductive glass or ZTO conductive glass.
Preferably, the thickness of the bottom electrode is 50-300 nm, and the area of the bottom electrode is 0.16-16 mu m2。
Preferably, the thickness of the conversion layer is 30-100 nm, and the area of the conversion layer is 0.16-16 μm2。
Preferably, the thickness of the top electrode is 50-300 nm, and the area of the top electrode is 0.16-16 mu m2。
The invention also provides a preparation method of the gating device based on the niobium oxide, which comprises the following steps:
(1) taking argon as working gas, taking a niobium pentoxide target as a sputtering target, and performing first sputtering on the surface of a bottom electrode to obtain a gating device semi-finished product based on niobium oxide;
(2) and performing second sputtering on the niobium oxide surface of the semi-finished product of the gating device based on the niobium oxide by taking argon as a working gas and a platinum target as a sputtering target to obtain the gating device based on the niobium oxide.
Preferably, the system pressure of the first sputtering is 3 to 5Torr, and the temperature of the first sputtering is 285 to 315K.
Preferably, the power of the first sputtering is 100-140W, and the time of the first sputtering is 600-2000 s.
Preferably, the system pressure of the second sputtering is 3-5 Torr, and the temperature of the second sputtering is 285-315K.
Preferably, the power of the second sputtering is 80-120W, and the time of the second sputtering is 200-1200 s.
The invention provides a gating device based on niobium oxide, which sequentially comprises a bottom electrode, a conversion layer and a top electrode from bottom to top, wherein the bottom electrode is made of TiN or conductive glass, the conversion layer is made of niobium oxide, and the top electrode is made of platinum. The invention uses niobium oxide as a conversion layer, uses TiN or conductive glass as a bottom electrode and uses metal platinum as a top electrode to form the gating device based on the niobium oxide with excellent electrical stability. Experimental results show that the gating device provided by the invention has a small deviation degree of the obtained curve after being tested for 100 circles circularly, which shows that the gating device has excellent electrical stability.
Drawings
FIG. 1 is a schematic diagram of a niobium oxide based gated device cell structure;
FIG. 2 is an I-V test chart of the gate performance of the gate device based on niobium oxide obtained in example 1;
FIG. 3 is an I-V test chart of the gate performance of the gate device based on niobium oxide obtained in example 2.
Detailed Description
The invention provides a gating device based on niobium oxide, which sequentially comprises a bottom electrode, a conversion layer and a top electrode from bottom to top, wherein the bottom electrode is made of TiN or conductive glass, the conversion layer is made of niobium oxide, and the top electrode is made of platinum.
Fig. 1 is a schematic diagram showing a cell structure of a niobium oxide-based gate device according to the present invention, which includes a bottom electrode, a switching layer, and a top electrode in this order from bottom to top.
In the present invention, the conductive glass is preferably FTO conductive glass, ITO conductive glass, or ZTO conductive glass.
In the invention, the thickness of the bottom electrode is preferably 50-300 nm, more preferably 120-220 nm, and most preferably 150-200 nm; the area of the bottom electrode is preferably 0.16-16 mu m2。
In the invention, the thickness of the conversion layer is preferably 30-100 nm, and more preferably 50-80 nm; the area of the conversion layer is preferably 0.16-16 mu m2。
In the present invention, the oxide of niobium is preferably obtained by magnetron sputtering.
In the invention, the thickness of the top electrode is preferably 50-300 nm, more preferably 120-220 nm, and most preferably 150-200 nm; the area of the top electrode is preferably 0.16-16 mu m2。
The shape of the niobium oxide-based gate device is not particularly limited in the present invention, and those skilled in the art can select an appropriate shape as needed. In an embodiment of the present invention, the shape of the niobium oxide based gating device is preferably square.
The invention also provides a preparation method of the gating device based on the niobium oxide, which comprises the following steps:
(1) taking argon as working gas, taking a niobium pentoxide target as a sputtering target, and performing first sputtering on the surface of a bottom electrode to obtain a gating device semi-finished product based on niobium oxide;
(2) and performing second sputtering on the niobium oxide surface of the semi-finished product of the gating device based on the niobium oxide by taking argon as a working gas and a platinum target as a sputtering target to obtain the gating device based on the niobium oxide.
According to the invention, a platinum target and a niobium pentoxide target are preferably arranged on a magnetron sputtering device, then a vacuum chamber of the magnetron sputtering device is vacuumized, and argon is introduced to the pressure required by first sputtering, so that the working atmosphere of the argon is obtained. In the present invention, when one target is used, the apparatus automatically protects the other target to ensure that one target is sputtered at a time.
In the present invention, the purity of the platinum target is preferably 99.99% or more.
In the present invention, the purity of the niobium pentoxide target is preferably not less than 99.99%.
In the present invention, the sources of the platinum target and the niobium pentoxide target are not particularly limited, and commercially available targets may be used.
After the working atmosphere of argon gas is obtained, the first sputtering is carried out on the surface of the bottom electrode by taking a niobium pentoxide target as a sputtering target in the working atmosphere of argon gas, and a semi-finished product of the gating device based on the niobium oxide is obtained.
The present invention preferably performs a cleaning process on the surface of the bottom electrode, and then performs the first sputtering as a substrate.
The source of the bottom electrode is not particularly limited in the present invention, and a commercially available bottom electrode can be directly used. In the embodiment of the invention, the bottom electrode is a film-carrying substrate loaded with a bottom electrode material in the market.
The cleaning method is not particularly limited, and the dust on the surface of the bottom electrode can be removed. In an embodiment of the present invention, the cleaning treatment is preferably performed by high pressure air flushing.
In the present invention, the first sputtering is preferably radio frequency magnetron sputtering.
In the invention, the system pressure of the first sputtering is preferably 3-5 Torr, and more preferably 4 Torr; the temperature of the first sputtering is preferably 285-315K, and more preferably 300K.
In the invention, the power of the first sputtering is preferably 100-140W, and more preferably 110-130W; the time of the first sputtering is preferably 600 to 2000s, and more preferably 1000 to 1500 s.
After the first sputtering is finished, the invention uses argon as working gas, uses a platinum target as a sputtering target, and carries out second sputtering on the niobium oxide surface of the semi-finished product of the gating device based on the niobium oxide, so as to obtain the gating device based on the niobium oxide.
The second sputtering method is not particularly limited, and may be dc magnetron sputtering or rf magnetron sputtering, and in the embodiment of the present invention, dc magnetron sputtering is preferred.
In the invention, the system pressure of the second sputtering is preferably 3-5 Torr, and more preferably 4 Torr; the temperature of the second sputtering is preferably 285-315K, and more preferably 300K.
In the invention, the power of the second sputtering is preferably 80-120W, and more preferably 90-110W; the second sputtering time is preferably 200 to 1200s, more preferably 400 to 1000s, and most preferably 600 to 800 s.
The niobium oxide-based gate device and the method for manufacturing the same according to the present invention will be described in detail with reference to the following examples, which should not be construed as limiting the scope of the present invention.
Example 1
(1) The belt has an area of 1 μm2The surface of the mould-carrying base material of the TiN bottom electrode is washed by high-pressure air for standby; the TiN bottom electrode is square and 200nm thick;
(2) installing a platinum target and a niobium pentoxide target in a magnetron sputtering device, placing the mould-carrying base material with the TiN bottom electrode obtained by the treatment in the step (1) in the magnetron sputtering device, vacuumizing a vacuum chamber, and introducing argon until the system pressure is 4 Torr;
(3) starting a radio frequency measurement and control sputtering power supply, sputtering niobium pentoxide on the surface of the TiN bottom electrode for 800s at the temperature of 300K and the power of 120W, and then closing radio frequency magnetron sputtering to obtain a semi-finished product;
(4) and starting a direct-current magnetron sputtering power supply, sputtering platinum on the surface of the semi-finished product for 900s at the temperature of 300K and the power of 100W, and then closing the direct-current frequency magnetron sputtering to obtain the gating device based on the niobium oxide.
The niobium oxide based gate device obtained in this example was measured to have a switching layer thickness of 45nm and a top electrode thickness of 200 nm.
The gating performance of the gating device based on the niobium oxide obtained in the embodiment is tested on an agilent B1500A semiconductor parameter analyzer test platform, and the test method specifically comprises the following steps:
firstly, two probes are respectively contacted with a top electrode and a bottom electrode, then, Agilent B1500A test software is used for setting scanning voltage of-1.5V to +1.5V, one cycle of the scanning voltage work is divided into four parts, the scanning voltage is firstly scanned from 0V to +1.5V, then scanned from +1.5V to 0V, then scanned from 0V to-1.5V, and finally scanned from-1.5V to 0V, thus completing one cycle, the number of scanning steps of each part is 101, namely, when the voltage is scanned from 0V to +1.5V, the current is taken at 101 points, the current is limited to 0.4mA, and the cycle test is carried out for 100 cycles, and the result is shown in figure 2. As can be seen from fig. 2, the curve obtained by the cycle test for 100 cycles has no obvious deviation, which indicates that the device obtained in the present embodiment has excellent electrical cycle stability and good tolerance; in addition, the device prepared by the embodiment has a larger nonlinear value and a higher on-state current density, the nonlinear value can reach 58.65, and the on-state current density is 4 x 104A/cm2(ii) a Meanwhile, the preparation method provided by the embodiment has compatibility with Complementary Metal Oxide Semiconductor (CMOS) technology.
Example 2
(1) The belt has an area of 0.36 μm2The surface of the mould-carrying base material of the TiN bottom electrode is washed by high-pressure air for standby; the TiN bottom electrode is square and 200nm thick;
(2) installing a platinum target and a niobium pentoxide target in a magnetron sputtering device, placing the mould-carrying base material with the TiN bottom electrode obtained by the treatment in the step (1) in the magnetron sputtering device, vacuumizing a vacuum chamber, and introducing argon until the system pressure is 4 Torr;
(3) starting a radio frequency measurement and control sputtering power supply, sputtering niobium pentoxide on the surface of the TiN bottom electrode for 800s at the temperature of 300K and the power of 120W, and then closing radio frequency magnetron sputtering to obtain a semi-finished product;
(4) and starting a direct-current magnetron sputtering power supply, sputtering platinum on the surface of the semi-finished product for 900s at the temperature of 300K and the power of 100W, and then closing the direct-current frequency magnetron sputtering to obtain the gating device based on the niobium oxide.
The niobium oxide based gate device obtained in this example was measured to have a switching layer thickness of 45nm and a top electrode thickness of 200 nm.
The gating performance of the gating device based on the niobium oxide obtained in the embodiment is tested on an agilent B1500A semiconductor parameter analyzer test platform, and the test method specifically comprises the following steps:
firstly, two probes are respectively contacted with a top electrode and a bottom electrode, then, Agilent B1500A test software is used for setting scanning voltage of-0.6V to +0.6V, one cycle of the scanning voltage work is divided into four parts, the scanning voltage is firstly scanned from 0V to +0.6V, then scanned from +0.6V to 0V, then scanned from 0V to-0.6V, and finally scanned from-0.6V to 0V, thus completing one cycle, the number of scanning steps of each part is 101, namely, when the voltage is scanned from 0V to +0.6V, the current is taken at 101 points, the current is limited to 0.2mA, and the cycle test is carried out for 100 cycles, and the result is shown in figure 3. From fig. 3, it can be seen that the curve obtained by the cycle test for 100 cycles has no obvious deviation, which indicates that the device obtained in the present embodiment has excellent electrical cycle stability and good tolerance; in addition, the device prepared by the embodiment has a larger nonlinear value and a higher on-state current density, the nonlinear value can reach 32.41, and the on-state current density is 5.56 to 104A/cm2(ii) a Meanwhile, the preparation method provided by the embodiment has compatibility with Complementary Metal Oxide Semiconductor (CMOS) technology.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (6)
1. The gating device based on the oxide of the niobium sequentially comprises a bottom electrode, a conversion layer and a top electrode from bottom to top, wherein the bottom electrode is made of TiN or conductive glass, the conversion layer is made of the oxide of the niobium, the thickness of the conversion layer is 30-100 nm, the top electrode is made of platinum, the oxide of the niobium is obtained through magnetron sputtering, a sputtering target used in the magnetron sputtering is a niobium pentoxide target, the system pressure in the magnetron sputtering process is 3-5 Torr, the sputtering temperature is 285-315K, the sputtering power is 100-140W, and the sputtering time is 600-2000 s.
2. The niobium oxide based gating device of claim 1, wherein the conductive glass is an FTO conductive glass, an ITO conductive glass, or a ZTO conductive glass.
3. The niobium-based oxide gate device according to claim 1 or 2, wherein the thickness of the bottom electrode is 50 to 300nm, and the area of the bottom electrode is 0.16 to 16 μm2。
4. The niobium based oxide gate device of claim 1, wherein the area of the switching layer is 0.16 to 16 μm2。
5. The niobium-based oxide gate device according to claim 1, wherein the thickness of the top electrode is 50 to 300nm, and the area of the top electrode is 0.16 to 16 μm2。
6. A method of making a niobium oxide based gating device as claimed in any one of claims 1 to 5, comprising the steps of:
(1) taking argon as working gas, taking a niobium pentoxide target as a sputtering target, and performing first sputtering on the surface of a bottom electrode to obtain a gating device semi-finished product based on niobium oxide; the system pressure of the first sputtering is 3-5 Torr, the temperature of the first sputtering is 285-315K, the power of the first sputtering is 100-140W, and the time of the first sputtering is 600-2000 s;
(2) performing second sputtering on the niobium oxide surface of the semi-finished product of the gating device based on the niobium oxide by taking argon as a working gas and a platinum target as a sputtering target to obtain the gating device based on the niobium oxide; the system pressure of the second sputtering is 3-5 Torr, the temperature of the second sputtering is 285-315K, the power of the second sputtering is 80-120W, and the time of the second sputtering is 200-1200 s.
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| CN112397648B (en) * | 2020-12-11 | 2023-04-07 | 湖北大学 | Titanium doping-based niobium oxide gate tube and preparation method thereof |
| CN113066927B (en) * | 2021-02-03 | 2023-04-07 | 湖北大学 | Titanium-doped niobium oxide-based 1S1R device and preparation method thereof |
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