CN108231748A - Improve the method and semiconductor structure of polymer residue - Google Patents
Improve the method and semiconductor structure of polymer residue Download PDFInfo
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- CN108231748A CN108231748A CN201810029234.7A CN201810029234A CN108231748A CN 108231748 A CN108231748 A CN 108231748A CN 201810029234 A CN201810029234 A CN 201810029234A CN 108231748 A CN108231748 A CN 108231748A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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Abstract
The invention discloses a kind of method for improving polymer residue, including step：One substrate is provided；Magnetic coupling layer is formed over the substrate；Conductive layer is formed on the magnetic coupling layer；Barrier layer is formed on the conductive layer；It etches the barrier layer and forms opening, the opening exposes the conductive layer；Metal layer is formed in said opening, and the metal layer passes through the conductive layer and the magnetic coupling layer Ohmic contact.For the present invention using conductive layer as barrier layer and the buffering separation layer of magnetic coupling layer, barrier layer is etched and then etching conductive layer, can protect magnetic coupling layer；Conductive layer is done with titanium-containing materials, and after dry etching, the reactant of titanium is volatile substance, and residue easy cleaning, etching gained surface is cleaner, improves the performance and yield of product；In addition, volatile reactant is smaller to the environmental pollution of dry-process etching cavity, etching cavity maintenance period is long, improves production efficiency and reduces production cost.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly, to a kind of method and correspondence for improving polymer residue
Semiconductor structure.
Background technology
With super large-scale integration and system integration and component chip type, printed circuit board (PCB) surface
Device installs the progress of densification, and the component that high power is miniaturized in market proposes active demand, it is desirable that smaller
More components are integrated on substrate.Development miniaturization, the component of filming, to reduce the overall volume of system and weight,
Undoubtedly adapt to a practicable approach of this requirement.Therefore, to occupying larger volume and weight in the electronic device
Magnetic device, as inductor, the miniaturization of transformer, high frequency also accordingly propose very high requirement.
In this background, the research for the micro-magnetic device made in the world for use thin magnetic film and and semiconductor device
The research of magnetic integrated circuit (IC) that part is integrally formed is very active.These devices are mainly used for portable information communication and set
It is standby, such as mobile phone.In such devices, to ensure its job stability and economy, the miniaturization of power unit and height
Efficient activity is critically important.So the magnetic device of filming is from various inductors, wave filter, DC/DC converters earliest
The beginnings such as transformer.
It was used for NiFe alloy, ferrite of magnetic device etc. in the past, whether the frequency of saturation flux density or magnetic conductivity
Rate characteristic, far from the requirement for meeting growing novel electron equipment.Such as in order to prevent wave filter, transformer magnetic satisfy
High-coercive force medium in being stored with and information to employ high-density recording fully magnetizes, it is desirable that the saturation flux of material
Density is in more than 1.5T.In addition, many communication equipment loop aerials, inductor etc., it is desirable that can be in hundreds of MHz to the frequency of number GHz
Rate range works.The all currently used magnetic material of these requirements can not meet.The film of magnetic material is turned in satisfaction
It states requirement and provides possibility.Therefore, before the filming of magnetic material is the basis of micro-magnetic device and realizes magnetism IC in the future
One of carry.
Thin magnetic film is mostly integrated on CMOS, BiCMOS, TFT and other IC wafers by micro-magnetic device.It is and existing
The magnetic material (laminated film) of micro-magnetic device can generate not volatile by-product during dry etching, after dry etching
Photoresist cleaning be difficult the polymer that crystal column surface deposits is cleaned up, influence the performance and yield of product；This by-product simultaneously
Object can cause the etching cavity radio frequency time to reduce, and increase the maintenance times of etching cavity.
Therefore, how avoiding the magnetic material of micro-magnetic device, difficult cleaning of polymer is generated in etching process is current
The technical issues of urgently to be resolved hurrily.
Invention content
The purpose of the present invention is to provide a kind of method or structures, are being carved to avoid the magnetic composite in micro-magnetic device
The residual phenomena of not volatile polymer generated during particularly dry etching is lost, improves the performance and yield of product.
In order to achieve the above object, the present invention provides a kind of method for improving polymer residue, including step：
One substrate is provided；
Magnetic coupling layer is formed over the substrate；
Conductive layer is formed on the magnetic coupling layer；
Barrier layer is formed on the conductive layer；
It etches the barrier layer and forms opening, the opening exposes the conductive layer；And
Metal layer is formed in said opening, and the metal layer is connect by the conductive layer and described magnetic coupling layer ohm
It touches.
Optionally, it is formed before magnetic coupling layer over the substrate, is initially formed one layer of separation layer.
Optionally, described the step of forming magnetic coupling layer over the substrate, includes：
Successively deposit magnetic material and transition material, obtain magnetic coupling layer；
The magnetic coupling layer is made annealing treatment；
Processing is patterned to the magnetic coupling layer.
Optionally, the magnetic material is iron-nickel alloy, and the transition material is tantalum nitride.
Optionally, the magnetic coupling layer is prepared by physical sputtering mode.
Optionally, the annealing of the magnetic coupling layer is carried out using the high temperature furnace pipe for being internally provided with magnetic field.
Optionally, it is described to include in the step of formation conductive layer on the magnetic coupling layer：
Depositing conductive material obtains conductive layer；
Processing is patterned to the conductive layer.
Optionally, the conductive material is titanium nitride.
Optionally, the conductive layer is prepared by magnetron sputtering.
Optionally, described the step of forming metal layer in said opening, includes：
Metal layer is formed in described be formed on the barrier layer of opening, the metal layer and the conduction for being open and exposing
Layer contact；
Processing is patterned to the metal layer.
In order to achieve the above object, the present invention also provides a kind of semiconductor structure, including：
One substrate；
Magnetic coupling layer on the substrate；
Conductive layer on the magnetic coupling layer；
Barrier layer on the conductive layer；
Opening in the barrier layer, the opening expose the conductive layer；And
Metal layer in the opening, the metal layer are connect by the conductive layer and described magnetic coupling layer ohm
It touches.
Optionally, the semiconductor structure further includes being isolated between the substrate and the magnetic coupling layer
Layer.
Optionally, the magnetic coupling layer includes layer of iron-nickel alloy and the tantalum nitride layer in the layer of iron-nickel alloy.
Optionally, the conductive layer is titanium nitride layer.
Compared with prior art, the method or semiconductor structure provided by the invention for improving polymer residue, by magnetic
Conductive layer is formed on property composite bed, using conductive layer as magnetic coupling layer and the buffering separation layer on barrier layer, in etching barrier layer
When forming the opening of follow-up progress metal layer electrical connection, after being cut through over etching occurs for barrier layer, and continue etching is conductive
Layer, is no longer magnetic coupling layer, can protect the pattern of magnetic coupling layer.
Further, conductive layer is done with titanium-containing materials, the reactant after conductive layer etching is volatile substance, residue
Easy cleaning, etching gained surface is cleaner, improves the performance and yield of product；In addition, obtained after titanium-containing materials etching
Volatile reactant is smaller to the environmental pollution of etching cavity, and etching cavity maintenance period is long, and volatile reactant is easy to
Cleaning, it is short to have etched scavenging period, improves production efficiency and reduces production cost.
Description of the drawings
Fig. 1 is the step schematic diagram of the improvement polymer residue method of one embodiment of the invention；
Fig. 2-5 is that one embodiment of the invention improves the structure change schematic diagram that polymer residue method manufactures micro-magnetic device；
In figure, 1- substrates, 2- separation layers, 3- magnetic coupling layers, 31- layer of iron-nickel alloy, 32- tantalum nitride layers, 4- conductive layers,
5- barrier layers, 6- metal layers.
Specific embodiment
The specific embodiment of the present invention is described in more detail below in conjunction with schematic diagram.According to description below and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is using very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Inventor is the study found that the magnetic material laminated film of existing micro-magnetic device can generate not during dry etching
The by-product of tantalum is not volatile in volatile by-product particularly tantalum nitride, and (photoresist is gone the photoresist cleaning after dry etching
After removing and being ashed, then wet-cleaning) it is difficult that the not volatile polymer that crystal column surface deposits is cleaned up so that micro- chinaware
Part interior contact is bad, seriously affects the performance and yield of product.This by-product can cause the etching cavity radio frequency time simultaneously
It reduces, increases the maintenance times of etching cavity.
Based on this, the embodiment of the present invention proposes a kind of method for improving polymer residue in micro-magnetic device, including step：
S1, a substrate 1 is provided；
S2, magnetic coupling layer 3 is formed on substrate 1；
S3, conductive layer 4 is formed on magnetic coupling layer 3；
S4, barrier layer 5 is formed on conductive layer 4；
S5, etching barrier layer 5 form opening, and the opening exposes conductive layer 4；And
S6, metal layer 6 is formed in said opening, metal layer 6 passes through conductive layer 4 and 3 Ohmic contact of magnetic coupling layer.
Below in conjunction with Fig. 2-Fig. 5, the embodiment of the present invention, which is discussed in detail, improves the method for polymer residue and its corresponding
Micro-magnetic device structure.
First, referring to Fig. 2, step S1 is performed, a substrate 1 is provided, substrate 1 can have depending on manufacture requires in substrate 1
Without logic circuit structure.
Optionally, it before step S2 is performed, i.e., is formed before magnetic coupling layer 3, referring to Fig. 2, first served as a contrast on substrate 1
One layer of separation layer 2 is formed on bottom 1, the performance of substrate 1 is influenced to prevent the diffusion of magnetic coupling layer 3.
Wherein, separation layer 2 can be passed through by photoelectric property, inactivating performance and the good silicon nitride material of water vapor penetrating power
Chemical vapour deposition technique is prepared.
Then, step S2 is performed, magnetic coupling layer 3 is formed on substrate 1, including step：
S21, successively deposit magnetic material and transition material, obtain magnetic coupling layer 3；
S22, magnetic coupling layer 3 is made annealing treatment；
S23, processing is patterned to magnetic coupling layer 3.
Step S21 is performed, referring to Fig. 2, magnetic coupling layer 3 is formed on separation layer 2.
Optionally, magnetic coupling layer 3 includes layer of iron-nickel alloy 31 and the tantalum nitride layer 32 in layer of iron-nickel alloy 31, i.e.,
The magnetic material is iron-nickel alloy, and the transition material is tantalum nitride.Transition of the tantalum nitride layer 32 as layer of iron-nickel alloy 31
Separation layer can prevent the diffusion between follow-up upper strata contacting metal and layer of iron-nickel alloy 32, enhance the stable structure of micro-magnetic device
Property and electric (magnetic) learn performance.
Wherein, iron-nickel alloy has narrow and steep hysteresis loop, has rectifying for very big magnetic conductivity and very little in low-intensity magnetic field
Stupid power；And its resistivity is little；The processing performance of iron-nickel alloy is good, can be made into variously-shaped complicated, size requirement accurately
Element, therefore magnetic coupling film uses iron-nickel alloy more.And tantalum nitride is a kind of resistive film of stabilization, has good electrical property
Can, such as TaN and Ta2N has relatively low temperature coefficient, and resistance is again relatively low, meanwhile, TaN films or a kind of good expansion
Barrier film is dissipated, thus is had in semiconductor integrated circuit and in combined metal oxide semiconductor as Diffusion Barrier material
It and is widely applied, tantalum nitride has very extensive application valency in the embedding passive element of thin-film technique and multi-chip module
Value.
Optionally, in the step s 21, magnetic coupling layer 3 is splashed (including layer of iron-nickel alloy 31 and tantalum nitride layer 32) by physics
The mode of penetrating is prepared.The film that physical sputtering is prepared, adhesion is good, and Step Coverage ability is good, and thickness is uniform.
Then, step S22 is performed, magnetic coupling layer 3 is made annealing treatment.It is general in the preparation process of thin magnetic film
It needs that material is heat-treated to control the phase structure of material.And conventional annealing and short annealing can be divided by annealing：Routine is moved back
Fiery (CTA) using resistance stove heat, the heating, cooling time is long and has certain destruction for the micro-structure of device.In magnetism
In the production process of thin-film device, high annealing temperature is to the damage bigger of layer；Short annealing (RTA) is in the semiconductor industry
Through being a ripe technology, short annealing process, which usually only requires a very short time, can rise to high temperature, and the duration compared with
The short damage to layer and device is smaller, therefore can give full play to the performance of material, even can obtain volume in some cases
Outer excellent performance.
Optionally, the annealing of magnetic coupling layer 3 uses quick thermal annealing process.By the releasable magnetic coupling of short annealing
Residual stress in layer 3, improves its crystalline state, enhances its ferroelectric properties.
Optionally, the annealing of magnetic coupling layer 3 is carried out using the high temperature furnace pipe for being internally provided with magnetic field, multiple to magnetism
While conjunction layer 3 is made annealing treatment, strengthen the magnetic of magnetic coupling layer 3 by being arranged on the high-intensity magnetic field inside high temperature furnace pipe
Property.
Then, step S23 is performed, processing is patterned to magnetic coupling layer 3, according to the device junction to be manufactured
The requirement of structure is patterned processing to magnetic coupling layer 3, can take the means such as etching or stripping to magnetic coupling layer 3 into
Row graphical treatment obtains required shape, structure.
Wherein, after due to dry etching, the by-product of tantalum is not volatile, easily remains, therefore is carried out to magnetic coupling layer 3
Wet etching or lift-off technology can be used when graphical.
Then, step S3 is performed, referring to Fig. 2, conductive layer 4 is formed on magnetic coupling layer 3, including：
S31, depositing conductive material obtain conductive layer 4；
S32, processing is patterned to conductive layer 4.
Optionally, in step S31, titanium nitride or other metal materials can be used in the conductive material.Conductive layer 4 is used as
Metal barrier between barrier layer 5 and magnetic coupling layer 3 can effectively prevent the etching to magnetic coupling layer 3, so as to avoid
Magnetic coupling layer 3 etches the residual contamination of not volatile polymer caused by particularly dry etching, and can also prevent magnetic
Metal ion in property composite bed 3 is diffused into barrier layer 5 and influences the performance of device.
In addition, from the design angle of semiconductor structure, conductive layer 4 be arranged on metal layer 6 and magnetic coupling layer 3 it
Between, the electric current that applies on metal layer 6 can flow through conductive layer 4 and be applied on magnetic coupling layer 3, conductive layer 4 there are certain resistance,
Shunting consume can be carried out to total current, and then influences the sensitivity of the electromagnetic response of magnetic coupling layer 3.Therefore, the thickness of conductive layer 4
Degree needs appropriate be thinned.
Wherein, the cost of titanium nitride is lower than noble metal, but its electric conductivity and many noble metals (gold, silver) are quite, and contain
Titanium material dry etching product is readily volatilized, and the etch residue for removing titanium-containing materials is easier, so the present invention one is implemented
Conductive material in example selects titanium nitride.
Optionally, in step s 32, conductive layer 4 is prepared by magnetron sputtering.Magnetron sputtering prepares conductive layer technology master
There are two kinds of magnetically controlled DC sputtering and rf magnetron sputtering, non-balance magnetically controlled sputter and reactive sputtering occur again recently.Wherein,
Non-balance magnetically controlled sputter method is also a kind of common sputtering method both at home and abroad；In addition, reactive sputtering method is unique excellent because of its
Point is earliest and uses most in titanium nitride layer preparation.Magnetron sputtering prepares titanium nitride layer with sputtering raste height, substrate Wen Sheng
Low, the advantages that film-substrate cohesion is good, device performance is stable, convenient operation and control.
In the step 32, graphical treatment is done to conductive layer 4, when doing graphical treatment, conductive layer 4 should cover magnetic multiple
The figure of layer 3 is closed, and to avoid short circuit caused by conductive layer 4.
Wherein, magnetic coupling layer 3 and the graphical treatment of conductive layer 4 can also together be done after the formation of conductive layer 4, but
It is separately to do graphical treatment, layering is sequentially etched or removes, and pattern precision is easier to control.In addition, some etchings to be obtained
The necessary layering etching of the differentiated micro-magnetic device of graphic structure arrived.
Then, step S4 is performed, barrier layer 5 is formed on conductive layer 4.As the effect of barrier layer 5 and separation layer 2,
It is for blocking is isolated, to maintain the stability of device architecture.The silicon nitride material as separation layer 2 may be used in barrier layer 5
Material, can also use other isolated materials.
Then, step S5 is performed, referring to Fig. 3, opening A is formed in etching barrier layer 5, opening A exposes conductive layer 4.
The size of opening A determines that exposure opening A is to subsequently be electrically connected according to needed for device.
In step s 5, it can trust and opening A has been formed come etching barrier layer 5 using dry etching, at this point, due in magnetic
Property composite bed 3 and barrier layer 5 between increase one layer of conductive layer 4, after having served as etching barrier layer 5, will not etch magnetic multiple
Tantalum nitride layer 32 in conjunction layer 3, but etching conductive layer 4, polymerize caused by so as to avoid direct etching tantalum nitride layer 32
Object remains and protects the pattern of magnetic coupling layer 3.
Then, step S6 is performed, the step of forming metal layer in A includes being open：
S61, metal layer 6, the conductive layer 4 that metal layer 6 is exposed with opening A are formed on the barrier layer 5 of opening A is formed with
Contact；
S62, processing is patterned to metal layer 6.
As shown in figure 4, performing step S61, deposited on barrier layer 5 and form metal layer 6, metal layer 6 is by the A that is open with leading
Electric layer 4 contacts, and the good conductive layer 4 of electric conductivity is contacted with magnetic coupling layer 3, therefore metal layer 6 and 3 shape of magnetic coupling layer
Into good Ohmic contact.
Optionally, the deposit of metal layer 6 can also be completed by physical sputtering method.The attachment of film prepared by physical sputtering
Property good, thickness uniform, controllable system, but prepare speed it is slow.In addition, the deposit of the metal layer 6 in the embodiment of the present invention can also profit
It is obtained with fireballing vacuum evaporation method is prepared, the purity of metal layer 6 being prepared using vacuum evaporation method is higher.Cause
This, the preparation method of metal layer 6 can be selected depending on technological requirement and condition.
Metal layer 6 deposit complete after, perform step S62, as shown in figure 5, pair with magnetic coupling layer 3 form good Europe
The metal layer 6 of nurse contact performs etching graphically, to form metal electrode, as the metal pad of micro-magnetic device, convenient for it is outer
Connect the encapsulation of pcb board or the integration packaging of other devices.
In conclusion in the method provided in an embodiment of the present invention for improving polymer residue, by magnetic coupling layer
Upper formation conductive layer, using conductive layer as barrier layer and the buffering separation layer of magnetic coupling layer, after etching barrier layer is formed
During the opening of continuous progress metal layer electrical connection, after being cut through over etching occurs for barrier layer, and continue etching is conductive layer, no longer
Magnetic coupling layer, can effective protection magnetic coupling layer pattern and structure, improve the electromagnetic performance of semiconductor structure；And it adopts
Conductive layer is done with titanium nitride material, and the titanium reactant of conductive layer is volatile substance after dry etching, and residue easy cleaning is carved
Erosion gained surface is cleaner, no longer there is the residual polyalcohol for influencing electromagnetic performance, improves the performance and yield of product；This
Outside, the volatile reactant obtained after the conductive layer etching of titanium nitride material is smaller to the environmental pollution of etching cavity, etch chamber
Body maintenance period is long, and volatile reactant is readily cleaned, and it is short to have etched scavenging period, is effectively improved production efficiency simultaneously
Reduce production cost.
The preferred embodiment of the present invention is above are only, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme of the present invention is not departed from, to the invention discloses technical solution and
Technology contents make the variations such as any type of equivalent replacement or modification, belong to the content without departing from technical scheme of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (14)
- A kind of 1. method for improving polymer residue, which is characterized in that including step：One substrate is provided；Magnetic coupling layer is formed over the substrate；Conductive layer is formed on the magnetic coupling layer；Barrier layer is formed on the conductive layer；It etches the barrier layer and forms opening, the opening exposes the conductive layer；AndMetal layer is formed in said opening, and the metal layer passes through the conductive layer and the magnetic coupling layer Ohmic contact.
- 2. improve polymer residue method as described in claim 1, which is characterized in that form magnetic coupling over the substrate Before layer, it is initially formed one layer of separation layer.
- 3. improve polymer residue method as claimed in claim 1 or 2, which is characterized in that described to be formed over the substrate The step of magnetic coupling layer, includes：Successively deposit magnetic material and transition material, obtain magnetic coupling layer；The magnetic coupling layer is made annealing treatment；Processing is patterned to the magnetic coupling layer.
- 4. improving polymer residue method as claimed in claim 3, which is characterized in that the magnetic material is iron-nickel alloy, The transition material is tantalum nitride.
- 5. improve polymer residue method as claimed in claim 3, which is characterized in that the magnetic coupling layer is by physical sputtering Mode is prepared.
- 6. improve polymer residue method as claimed in claim 3, which is characterized in that using the high temperature furnace for being internally provided with magnetic field Pipe carries out the annealing of the magnetic coupling layer.
- 7. improve polymer residue method as claimed in claim 3, which is characterized in that the shape on the magnetic coupling layer Include into the step of conductive layer：Depositing conductive material obtains conductive layer；Processing is patterned to the conductive layer.
- 8. improve polymer residue method as claimed in claim 7, which is characterized in that the conductive material is titanium nitride.
- 9. the improvement polymer residue method as described in claim 1 or 8, which is characterized in that the conductive layer is by magnetron sputtering It is prepared.
- 10. improve polymer residue method as claimed in claim 3, which is characterized in that described to form gold in said opening The step of belonging to layer includes：Metal layer is formed in described be formed on the barrier layer of opening, the conductive layer that the metal layer is exposed with the opening connects It touches；Processing is patterned to the metal layer.
- 11. a kind of semiconductor structure, which is characterized in that including：One substrate；Magnetic coupling layer on the substrate；Conductive layer on the magnetic coupling layer；Barrier layer on the conductive layer；Opening in the barrier layer, the opening expose the conductive layer；AndMetal layer in the opening, the metal layer pass through the conductive layer and the magnetic coupling layer Ohmic contact.
- 12. semiconductor structure as claimed in claim 11, which is characterized in that the semiconductor structure further includes one positioned at described Separation layer between substrate and the magnetic coupling layer.
- 13. the semiconductor structure as described in claim 11 or 12, which is characterized in that the magnetic coupling layer includes iron-nickel alloy Layer and the tantalum nitride layer in the layer of iron-nickel alloy.
- 14. semiconductor structure as claimed in claim 13, which is characterized in that the conductive layer is titanium nitride layer.
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