CN108227073A - A kind of modulation integrated type optical buffer based on SOI based structures - Google Patents
A kind of modulation integrated type optical buffer based on SOI based structures Download PDFInfo
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- CN108227073A CN108227073A CN201711315169.6A CN201711315169A CN108227073A CN 108227073 A CN108227073 A CN 108227073A CN 201711315169 A CN201711315169 A CN 201711315169A CN 108227073 A CN108227073 A CN 108227073A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
Abstract
The invention discloses a kind of modulation integrated type optical buffers based on SOI based structures, including the ridge straight wave guide based on SOI material preparations and cascade disc waveguide, its cascade disc waveguide includes several disc waveguides, the disc waveguide of the ridge straight wave guide and bottom forms between coupled zone and two neighboring disc waveguide with spacing through end face to end face and the connection with spacing forms coupled zone；And, the disc waveguide of the bottom includes left modulation arm, right modulation arm and the coplanar type waveguide electrode for forming electrical contact with left modulation arm, right modulation arm respectively, and unlatching and the closure of optical buffer are realized under the digital electric signal effect that the left modulation arm and right modulation arm are loaded in coplanar type waveguide electrode.The present invention can realize High Speed Modulation, and the switching manipulation of optical buffer function is rapidly completed, and realize ultrafast caching selection operation, can be applied in integrated high-speed all-optical network.
Description
Technical field
The present invention relates to a kind of modulation integrated type optical buffers based on SOI based structures, belong to the technical field of optic communication.
Background technology
With the drastically development of electronic industry, internet and information technology, technology and requirement for information processing are also got over
Come higher.Currently based in the communications field of electronic technology, information processing manner at network node for propagation of electrical signals or
The conversion of optical-electrical-optical.It is limited by electronic device, line rate is 40Gb/s in work.Electrical communication equipment is to higher work
It is relatively difficult to make speed development, and cost is very high；The optical-electronic of introducing, electrical-optical conversion again limit its really processing speed
Rate, so as to which network congestion, loss of data can be caused.
At this stage limitation backbone network transmission rate, network core exchange rate and the intervention rate of user it is most important because
Element is that all-optical switching technique is immature, specifically includes：Data exchange, data routing, data buffer storage and data forwarding technology.When
Before, light exchange,
Optical routing and light retransmission technique have obtained space progress and development, and therefore, grasp height is delayed, the Optical buffer technology of wide bandwidth
It is the key that realize all-optical network communication.The caching that data are carried out in area of light has many good qualities, including turning without photoelectricity, electric light
It changes, speed is fast, Electro Magnetic Compatibility is good, data format is transparent etc..At the same time, silicon materials with its unique popularity, it is easy of integration,
Advantage that can be compatible with COMS is by strong concern.The optical communication field Chinese Academy of Sciences utilizes the characteristic easy of integration of silicon materials significantly
The size of device is reduced, reduces device cost.Using silicon materials high-performance and low loss characteristic realize high-performance, high speed,
Low-loss optical interconnection is to overcome the limitation for being more and more electrically connected and bringing in electronic chip integrating process:As signal loses
Very, the problems such as RC retardation ratio.
It is pushed by all-optical network growth requirement, the application development in optoelectronic areas was extremely in recent years for SOI materials
Rapidly.SOI (Silicon-On-Insulator) is had based on the integrated optical wave guide device that this material is fabricated to based on other
The incomparable technical advantage of the photonic devices of traditional optical materials, specifically includes the following：Device loss very little, pattern
Characteristic and polarizability are fine, and transmission bandwidth is very big；It is completely compatible with silicon base CMOS technique, mature preparation process, convenience and
It is and cheap；Optical waveguide core layer Si and covering SiO2Refringence it is very big, waveguide have very strong optical confinement effect, wave
The size and bending radius led can be made small, therefore the photon integrated chip based on SOI has the chip size and very of very little
High integrated level, and can realize three-dimensional large-scale integrated；Active device and passive device can be made on SOI simultaneously
Part is easy to implement monolithic photonic hybrid integrated (OEIC)；The good heat conductivity of device, high frequency special efficacy are substantially better than SiO2 materials；
It (6) will be than current electronic loop soon about 10 for the arithmetic speed of the photon circuit of full light network4Times.
Silicon has very strong carrier dispersion effect, free carrier is injected in silica-based waveguides, meeting as optical material
The optical property of strong change silicon.According to classical dispersion theory, carrier can change the real part of the dielectric constant of silicon materials
And imaginary part, so as to change effective refractive index and absorption loss, can be realized whereby to light wave modulation or switching, then realize and make
For Primary Component in optical communication system and optical-fiber network such as：Electrooptic modulator etc., and then realize tunable optical caching function.
Invention content
The technical problems to be solved by the invention are to overcome the deficiencies of the prior art and provide a kind of based on SOI based structures
Modulation integrated type optical buffer, solve existing optical buffer can not realize while caching function complete high-speed switch cut
The problem of changing.
It is of the invention that above-mentioned technical problem is specifically solved using following technical scheme：
A kind of modulation integrated type optical buffer based on SOI based structures, including ridge straight wave guide and grade based on SOI material preparations
Join disc waveguide, cascade disc waveguide includes several disc waveguides, the disc waveguide of the ridge straight wave guide and bottom
It forms by end face to end face between coupled zone and two neighboring disc waveguide with spacing and is formed with the connection of spacing
Coupled zone；Also, using one end of the ridge straight wave guide as the input terminal and the other end of optical buffer as optical buffer
Output terminal；And the disc waveguide of the bottom include left modulation arm, right modulation arm and respectively with left modulation arm, right modulation arm
Form the coplanar type waveguide electrode of electrical contact, the number that the left modulation arm and right modulation arm are loaded in coplanar type waveguide electrode
Lower unlatching and the closure for realizing optical buffer of electric signal effect.
Further, as a preferred technical solution of the present invention：The left modulation arm and right modulation arm are by single mode
Ridge curved waveguide and the electricity structure composition being embedded.
Further, as a preferred technical solution of the present invention：The electricity structure being embedded uses current-carrying
The PIN structural of son doping.
Further, as a preferred technical solution of the present invention：The cascade disc waveguide includes four circumferential waves
It leads.
Further, as a preferred technical solution of the present invention：All disc waveguides in the cascade disc waveguide
Radius it is identical.
Further, as a preferred technical solution of the present invention：All disc waveguides in the cascade disc waveguide
The center of circle be located on the same straight line of ridge straight wave guide.
Further, as a preferred technical solution of the present invention：It is formed between the two neighboring disc waveguide
Coupled zone coupling interval is identical.
The present invention can generate following technique effect using above-mentioned technical proposal：
The present invention provides a kind of one-piece type electric light buffer of modulation based on SOI based structures, employs Optical buffer and Electro-optical Modulation
Integrated mode is operated by whether modulation arm control input optical signal carries out Optical buffer.The modulation arm of left and right two uses p-i-n
Structure, using the carrier dispersion effect of SOI bases, by changing intensity of the loading in doped region electric signal, to change doping
The concentration and distribution of regional carrier, the effective refractive index of waveguide becomes where causing modulation arm using intensity modulated
Change, so as to control the pattern of optical signal in buffer.
The electric light buffer of SOI based structures provided by the invention, the design for cascading disc waveguide effectively reduce whole device
The volume of part；The device can realize High Speed Modulation while caching function is completed, and opening for optical buffer function is rapidly completed
Operation is closed, ultrafast caching selection operation is realized, can be applied in integrated high-speed all-optical network.
Also, manufacture craft of the present invention can be compatible with COMS phases, with big amount of delay, fast response time, modulation function
Integration, transmission loss is low, the potential characteristics and advantages of small power consumption.
Description of the drawings
Fig. 1 is the structure diagram of the one-piece type electric light buffer of modulation the present invention is based on SOI based structures.
Fig. 2 is the cross-sectional view of modulation arm of the present invention.
Fig. 3 is that the caching function to be realized of embodiment selects schematic diagram.
Fig. 4（a）For the present invention different wave length input light to export optical signal amount of delay correspondence figure；Fig. 4（b）
And Fig. 4（c）Left modulation arm respectively of the invention and the electric digital input signals of right modulation arm and modulated response figure.
Specific embodiment
Embodiments of the present invention are described with reference to the accompanying drawings of the specification.
As shown in Figure 1, the present invention devises a kind of modulation integrated type optical buffer based on SOI based structures, including being based on
The ridge straight wave guide 1 of SOI material preparations and cascade disc waveguide, cascade disc waveguide include several disc waveguides, institute
It states and passes through end between coupled zone and two neighboring disc waveguide of the disc waveguide composition of ridge straight wave guide and bottom with spacing
In face of end face and the connection with spacing forms coupled zone；Also, using one end of the ridge straight wave guide as optical buffer
The output terminal of input terminal and the other end as optical buffer；And the disc waveguide of the bottom includes left modulation arm, right modulation
Arm and the coplanar type waveguide electrode for forming electrical contact with left modulation arm, right modulation arm respectively, the left modulation arm and right modulation
Unlatching and the closure of optical buffer are realized under the digital electric signal effect that arm is loaded in coplanar type waveguide electrode.
In the present embodiment, it is preferred to use the cascade disc waveguide includes four disc waveguides, that is, cascades disc waveguide packet
Include first annular waveguide 4, the second disc waveguide 5, third disc waveguide 6, fourth annular waveguide 7, wherein ridge straight wave guide 1 and
One disc waveguide 4 forms the first coupled zone 2-1 with spacing, first annular 4 and second disc waveguide 5 of waveguide, third annular
The is respectively formed to end face and the connection with spacing by end face between two to be connected in waveguide 6, fourth annular waveguide 7
Two coupled zone 2-2, third coupled zone 2-3, the 4th coupled zone 2-4.
And in the present embodiment, using the left end of the ridge straight wave guide 1 as electro-optic tunable optical buffer and outer order
The input terminal of mode fiber connection inputs light wave for introducing；The right end of the ridge straight wave guide 1 is as electro-optic tunable Optical buffer
The output terminal of device is connect with another external single mode optical fiber, for exporting the optical signal for whether passing through buffer.
In first ring waveguide 4, including left modulation arm 3-1, right modulation arm 3-2 and respectively with left modulation arm, right modulation
Arm forms the coplanar type waveguide electrode of electrical contact, and the coplanar type waveguide electrode is located at left modulation arm 3-1, right modulation arm 3-2
Top；Preferably, left modulation arm 3-1 and right modulation arm 3-2 are by single mode ridge curved waveguide and the electricity structure being embedded
Composition, electricity structure are the PIN structural of charge-carrier dopant, pass through coplanar type waveguide electrode modulation arm 3-1 and right modulation arm to the left
The digital signal that 3-2 loads digital signal and the left modulation arm 3-1 and right modulation arm 3-2 are loaded in coplanar type waveguide electrode
Lower unlatching and the closure function for realizing optical buffer of effect.Left modulation arm 3-1, right modulation arm 3-2 utilize the carrier color of SOI bases
Effect is dissipated, by changing intensity of the loading in doped region electric signal, to change the concentration of doped region carrier and distribution shape
State, the effective refractive index of waveguide changes where causing modulation arm using intensity modulated, and single mode optical signal then accordingly disappears, into
And control optical buffer on off state.
The optical buffer principle of structure of the present invention is：Optical buffer and the integrated mode of Electro-optical Modulation are employed, by left and right
Whether modulation arm control input optical signal carries out Optical buffer operation, and specific implementation process is：The modulation arm of left and right two uses PIN junction
Structure, using the carrier dispersion effect of SOI bases, by changing intensity of the loading in doped region electric signal, to change doped region
The concentration and distribution of domain carrier, the effective refractive index of waveguide changes where causing modulation arm using intensity modulated,
So as to control the pattern of optical signal in buffer.The present invention can simultaneously control left and right modulation arm, work as applied electronic signal
In the case of non-input, optical buffer normal work, the exportable optical signal with big amount of delay of ridge straight wave guide right end.
In the case that applied electronic signal is in input, High Speed Modulation regional work and then optical buffer is closed rapidly so that ridge is straight
Waveguide right end directly exports the optical signal into ridge straight wave guide.
On this basis, the radius of all disc waveguides is identical in preferably described cascade disc waveguide in the present invention.Into one
Step ground, the center of circle of all disc waveguides is located on the same straight line of ridge straight wave guide in the cascade disc waveguide.And
And the coupled zone coupling interval formed between the two neighboring disc waveguide is identical.
Therefore, the present invention can realize High Speed Modulation while caching function is completed, and optical buffer is rapidly completed
Ultrafast caching selection operation is realized in the switching manipulation of function.In order to verify that the present invention can realize the function, spy enumerates verification example
It illustrates.
This verification example is the silicon-based electro-optic tunable optical buffer based on SOI design of material, in order to realize maximum delay amount
Effect and minimal losses, also have corresponding requirement to the size of single mode ridge waveguide；This programme is to the ruler of single mode ridge waveguide
Very little design is as follows：Top layer Si thickness is 220nm, SiO2Thickness is 1.5 um.
As shown in Figure 1, using the electro-optic tunable optical buffer of this kind of SOI based structures, including what is made based on SOI materials
Ridge straight wave guide 1 and cascade disc waveguide, cascade disc waveguide are located at the top of straight wave guide, ridge straight wave guide 1 and first annular
Waveguide 4 forms the first coupled zone 2-1；It is equidistantly sequentially connected first annular to end face that the cascade disc waveguide includes end face
Waveguide 4, the second disc waveguide 5, third disc waveguide 6, fourth annular waveguide 7, and four disc waveguides it is two neighboring it
Between form the second coupled zone 2-2, third coupled zone 2-3, the 4th coupled zone 2-4.
In first ring waveguide 4, left modulation arm 3-1 and right modulation arm 3-2 are by single mode ridge curved waveguide and are embedded
Electricity structure forms, and electricity structure is PIN structural, and there are one coplanar type waveguides above left modulation arm 3-1 and right modulation arm 3-2
Electrode, coplanar waveguide electrode and charge-carrier dopant structure form electrical contact, pass through coplanar type waveguide electrode modulation arm 3-1 to the left
Digital signal is loaded with right modulation arm 3-2, using the carrier dispersion effect of SOI bases, by changing loading in doped region electricity
The intensity of signal, to change the concentration of doped region carrier and distribution, wave where causing modulation arm using intensity modulated
The effective refractive index led changes, and single mode optical signal then accordingly disappears, and then controls buffer switch state.
Fig. 2 show the sectional view of the modulator zone of left modulation arm 3-1 and right modulation arm 3-2 in the present invention, and modulator zone uses
PIN structural applies voltage by coplanar waveguide electrode in single mode ridge waveguide, generates Injection Current, changes doped region current-carrying
Sub- concentration so as to change the effective refractive index of intrinsic region, makes light phase change.The both sides distribution of single mode ridge straight wave guide 1
The P areas and N areas of heavy doping are used for forming Ohmic contact so that PN junction are formed in ridge waveguide, by above doped region
SiO2Etching windowing contact hole, makes electricity structure be connected with coplanar waveguide electrode.To make light field constraint in the waveguide, reduce and pass
Defeated loss, it is as follows to the parameter of waveguide design：Top layer silicon thickness 220nm, core layer thickness 70nm, ridge waveguide width 500nm,
Spacing 200nm is coupled, doped region is apart from ridge waveguide distance DdropFor 1um.
Fig. 3 and table 1 are the caching selection function and correspondence to be realized of electro-optic tunable optical buffer of the present invention respectively
Truth table, control is powered up to the coplanar waveguide electrode of two modulator zones respectively：When left and right modulation arm is in low level,
Port OUT can just export the optical signal with amount of delay；When left and right modulation arm is in high level, port OUT will not export band
There is the optical signal of amount of delay.
The corresponding menu of 1 this programme electro-optic tunable optical buffer of table
| Left modulation arm | Right modulation arm | OUT |
| 0 | 0 | There is amount of delay signal |
| 1 | 1 | No-delay amount signal |
Single mode ridge waveguide ensure that the single mode transport of optical signal, and the input optical signal of certain wavelength is passed by ridge straight wave guide 1
It is defeated to the first coupled zone 2-1, by analog scanning Output optical power, coupling spacing and the relationship of coupling efficiency can be respectively obtained
Curve, reuse mode delay theoretical modeling goes out the relation curve of different coupling efficiencies and amount of delay, between Best Coupling is obtained
Reduce doped region width size as possible away from the basis of, avoid Intrinsic Gettering of the excess carriers to optical signal.
Functional simulation design sketch such as Fig. 4 of the present invention（a）, Fig. 4（b）, Fig. 4（c）It is shown, wherein Fig. 4（a）For wave of the present invention
It leads under design structure, the input light of different wave length is to exporting the correspondence of optical signal amount of delay：When input wavelength reaches resonance
During wavelength, the corresponding optical signal amount of delay that exports reaches maximum.Fig. 4（b）、（c）Left modulation arm 2-1 and right modulation arm 2- are represented respectively
2 electric digital input signals and modulated response, the present invention is using numeric type high level, low level signal here, with logical one and
" 0 " represents respectively.When only left modulation arm 2-1 and right modulation arm 2-2 is low level, 1 output terminal of ridge straight wave guide just can be defeated
Go out to carry the optical signal of amount of delay；If left modulation arm 2-1 and right modulation arm 2-2 leads output all in high level, the straight wave 1 of ridge
There is no the optical signal of amount of delay.
Therefore, the present invention can obtain big amount of delay in port IN input optical signals by the optical signal of optical buffer
Caching and can normally be detected in OUT.Modulation arm region can be played as electrooptic modulator is quickly turned on and off Optical buffer
The function of device realizes cache controllable functions.It is substantially reduced needed for general high amount of delay using cascade loop configuration
Device size is wanted, and since SOI Refractive Index of Material difference is greatly to the strong bound biography that can utmostly reduce bending loss of light field
Defeated loss.
To sum up, the electric light buffer of SOI based structures provided by the invention, cascade disc waveguide design effectively reduce it is whole
The volume of body device；The device can realize High Speed Modulation while caching function is completed, and optical buffer function is rapidly completed
Switching manipulation, realize ultrafast caching selection operation, can be applied in integrated high-speed all-optical network.The present invention makes work
Skill can be compatible with COMS phases, and with big amount of delay, fast response time, modulation function is integrated, transmission loss is low, small power consumption is dived
Characteristics and advantages.
Embodiments of the present invention are explained in detail above in conjunction with attached drawing, but the present invention is not limited to above-mentioned implementations
Mode, within the knowledge of a person skilled in the art, can also be under the premise of present inventive concept not be departed from
It makes a variety of changes.
Claims (7)
1. a kind of modulation integrated type optical buffer based on SOI based structures, it is characterised in that：Including based on SOI material preparations
Ridge straight wave guide and cascade disc waveguide, cascade disc waveguide include several disc waveguides, the ridge straight wave guide with
The disc waveguide of bottom is formed to end face and to be carried between coupled zone and two neighboring disc waveguide with spacing by end face
The connection of spacing forms coupled zone；Also, using one end of the ridge straight wave guide as the input terminal and the other end of optical buffer
Output terminal as optical buffer；And the disc waveguide of the bottom include left modulation arm, right modulation arm and respectively with left tune
Arm processed, right modulation arm form the coplanar type waveguide electrode of electrical contact, and the left modulation arm and right modulation arm are in coplanar type waveguide
Lower unlatching and the closure for realizing optical buffer of digital electric signal effect of electrode loading.
2. the modulation integrated type optical buffer based on SOI based structures according to claim 1, it is characterised in that：The left tune
Arm processed and right modulation arm are made of single mode ridge curved waveguide and the electricity structure being embedded.
3. the modulation integrated type optical buffer based on SOI based structures according to claim 2, it is characterised in that：The insertion
Electricity structure therein uses the PIN structural of charge-carrier dopant.
4. the modulation integrated type optical buffer based on SOI based structures according to claim 1, it is characterised in that：The cascade
Disc waveguide includes four disc waveguides.
5. the modulation integrated type optical buffer based on SOI based structures according to claim 1, it is characterised in that：The cascade
The radius of all disc waveguides is identical in disc waveguide.
6. the modulation integrated type optical buffer based on SOI based structures according to claim 1, it is characterised in that：The cascade
The center of circle of all disc waveguides is located on the same straight line of ridge straight wave guide in disc waveguide.
7. the modulation integrated type optical buffer based on SOI based structures according to claim 1, it is characterised in that：It is described adjacent
The coupled zone coupling interval formed between two disc waveguides is identical.
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