CN108203765A - A kind of control method for production crystallization hafnium - Google Patents

A kind of control method for production crystallization hafnium Download PDF

Info

Publication number
CN108203765A
CN108203765A CN201611176748.2A CN201611176748A CN108203765A CN 108203765 A CN108203765 A CN 108203765A CN 201611176748 A CN201611176748 A CN 201611176748A CN 108203765 A CN108203765 A CN 108203765A
Authority
CN
China
Prior art keywords
female silk
hafnium
current value
controller
silk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201611176748.2A
Other languages
Chinese (zh)
Inventor
陈怀浩
叶晖
刘国平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NANJING YOUTIAN METAL TECHNOLOGY Co Ltd
Original Assignee
NANJING YOUTIAN METAL TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NANJING YOUTIAN METAL TECHNOLOGY Co Ltd filed Critical NANJING YOUTIAN METAL TECHNOLOGY Co Ltd
Priority to CN201611176748.2A priority Critical patent/CN108203765A/en
Publication of CN108203765A publication Critical patent/CN108203765A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00Obtaining refractory metals
    • C22B34/10Obtaining titanium, zirconium or hafnium
    • C22B34/14Obtaining zirconium or hafnium

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to control technology field more particularly to a kind of control methods for production crystallization hafnium, place thick hafnium raw material in four walls of the reaction vessel of sealing first, the hafnium filament of intermediate arrangement both ends connection electrode is as female silk;Then it connects with the mains on the electrode, during production crystallizes hafnium, measures the electric current for flowing through female silk, the current value of female silk measured is transferred to controller;The current value of the female silk measured is compared last controller with the load current value of female silk, and the voltage value of power supply is adjusted according to the corresponding voltage value of record after controller comparison.The present invention can automatically adjust the electric current for flowing through female silk, time saving and energy saving without long-term monitoring, greatly improve production efficiency.

Description

A kind of control method for production crystallization hafnium
Technical field
The present invention relates to control technology field more particularly to a kind of control methods for production crystallization hafnium.
Background technology
As shown in Fig. 2, when production crystallizes hafnium, four walls place thick hafnium raw material, intermediate cloth first in the reactor of sealing The hafnium filament of both ends connection electrode is put as female silk, iodine is added in after vacuumizing, maintains Cu Ha areas in low-temperature condition, the electricity at female silk both ends It connects with the mains on extremely, the temperature of female silk is maintained after energization in the condition of high temperature, at this point, the iodine added in is sublimed into iodine steam, iodine molecule Thick hafnium low-temperature space generation tetraiodide hafnium is diffused into, tetraiodide hafnium is sublimed into tetraiodide hafnium steam and is diffused into female silk high-temperature region, Thermal dissociation generation hafnium occurs on female silk of high temperature and iodine, hafnium are deposited on female silk, it is final so that the thick hafnium raw material of low-temperature space is continuous Be consumed, female silk of high-temperature region is thicker due to the continuous deposition of hafnium to become weight, finally obtains target product.
During production crystallizes hafnium, with the continuous deposition of hafnium, the resistance of female silk can become less and less, due to mother The resistance of silk is ceaselessly reducing, and the electric current for flowing through female silk is caused to be incrementally increased, and eventually results in the molten of female silk and electrode It is disconnected, so needing constantly to adjust the electric current for flowing through female silk, by manual operation, need long-term monitoring time-consuming and laborious.
Invention content
The present invention provides a kind of for producing the control method of crystallization hafnium, can automatically adjust the electric current for flowing through female silk, It is time saving and energy saving without manually participating in.
In order to achieve the object of the present invention, used technical solution is:A kind of control method for production crystallization hafnium, Include the following steps:
Step 1:Thick hafnium raw material is placed in four walls of the reaction vessel of sealing, the hafnium filament of intermediate arrangement both ends connection electrode is made For female silk;
Step 2:It connects with the mains on the electrode, during production crystallizes hafnium, measures the electric current for flowing through female silk, will measure The current value of female silk be transferred to controller;
Step 3:The current value of the female silk measured is compared controller with the load current value of female silk, and controller compares The voltage value of power supply is adjusted according to the corresponding voltage value of record afterwards.
As the prioritization scheme of the present invention, in step 2, the current value of female silk, current divider are flowed through using current divider measurement The current value of female silk measured is transferred to controller to handle.
As the prioritization scheme of the present invention, in step 3, it is connected on the electrode at female silk both ends using motor-generator set to adjust Power supply voltage value.
The present invention has positive effect:1) present invention can automatically adjust the electric current for flowing through female silk, without long-term monitoring, It is time saving and energy saving, greatly improve production efficiency;
2) present invention effectively avoids the fusing of female silk and electrode, improves the yield rate of crystallization hafnium;
3) controller of the invention is handled by the current value of female silk measured to input, realizes classification sublevel It adjusts, control is simple and reliable.
Description of the drawings
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the control flow chart of the present invention;
Fig. 2 is the schematic diagram of production crystallization hafnium.
Specific embodiment
As shown in Figure 1, include the following steps the invention discloses a kind of for producing the control method of crystallization hafnium:
Step 1:Thick hafnium raw material is placed in four walls of the reaction vessel of sealing, the hafnium filament of intermediate arrangement both ends connection electrode is made For female silk;
Step 2:It connects with the mains on the electrode, during production crystallizes hafnium, measures the electric current for flowing through female silk, will measure The current value of female silk be transferred to controller;
Step 3:The current value of the female silk measured is compared controller with the load current value of female silk, and controller compares The voltage value of power supply is adjusted according to the corresponding voltage value of record afterwards.
In step 2, the current value of female silk is flowed through using current divider measurement, current divider passes the current value of the female silk measured Controller is defeated by be handled.
In step 3, using motor-generator set the voltage value of the power supply on the electrode at female silk both ends is connected to adjust.
Wherein, controller can be the control devices such as microcontroller or ARM with CPU.Controller is by the female silk measured Current value is compared with the load current value of female silk, the load current value of female silk is had recorded in controller, and have recorded female silk Load current value corresponding to voltage value, by adjusting the voltage value of power supply, to change the current value for flowing through female silk.
During crystallizing hafnium in production, the resistance value of female silk is constantly reduced, can be by reducing the electricity of power supply Pressure value flows through the current value of female silk to control, and electrode and female silk is avoided to fuse, so as to achieve the purpose that stable continuous production, simultaneously The potential error that manual operation is brought is also avoided, it is time saving and energy saving.
Particular embodiments described above has carried out the purpose of the present invention, technical solution and advantageous effect further in detail It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention Within the scope of shield.

Claims (3)

1. a kind of control method for production crystallization hafnium, it is characterised in that:Include the following steps:
Step 1:Thick hafnium raw material is placed in four walls of the reaction vessel of sealing, the hafnium filament of intermediate arrangement both ends connection electrode is as female Silk;
Step 2:It connects with the mains on the electrode, during production crystallizes hafnium, measures the electric current for flowing through female silk, the mother that will be measured The current value of silk is transferred to controller;
Step 3:The current value of the female silk measured is compared controller with the load current value of female silk, root after controller compares The voltage value of power supply is adjusted according to the corresponding voltage value of record.
2. a kind of control method for production crystallization hafnium according to claim 1, it is characterised in that:In step 2, make The current value of female silk is flowed through with current divider measurement, the current value of female silk measured is transferred to controller and handled by current divider.
3. a kind of control method for production crystallization hafnium according to claim 1, it is characterised in that:In step 3, make With motor-generator set the voltage value of the power supply on the electrode at female silk both ends is connected to adjust.
CN201611176748.2A 2016-12-19 2016-12-19 A kind of control method for production crystallization hafnium Pending CN108203765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611176748.2A CN108203765A (en) 2016-12-19 2016-12-19 A kind of control method for production crystallization hafnium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611176748.2A CN108203765A (en) 2016-12-19 2016-12-19 A kind of control method for production crystallization hafnium

Publications (1)

Publication Number Publication Date
CN108203765A true CN108203765A (en) 2018-06-26

Family

ID=62602300

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611176748.2A Pending CN108203765A (en) 2016-12-19 2016-12-19 A kind of control method for production crystallization hafnium

Country Status (1)

Country Link
CN (1) CN108203765A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102011016A (en) * 2010-11-30 2011-04-13 南京佑天金属科技有限公司 Crystalline zirconium growing system and method thereof
CN102296191A (en) * 2011-08-25 2011-12-28 南京佑天金属科技有限公司 Growth system and method for crystalline hafnium
CN104360224A (en) * 2014-11-11 2015-02-18 甘肃电器科学研究院 Preheating switching device for fuse breaking capacity test
CN104451317A (en) * 2013-09-22 2015-03-25 北京有色金属研究总院 Hafnium-base mixed metal material and iodination preparation method thereof
CN104630494A (en) * 2015-01-19 2015-05-20 长春师范大学 Electroslag remelting process control system and control method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102011016A (en) * 2010-11-30 2011-04-13 南京佑天金属科技有限公司 Crystalline zirconium growing system and method thereof
CN102296191A (en) * 2011-08-25 2011-12-28 南京佑天金属科技有限公司 Growth system and method for crystalline hafnium
CN104451317A (en) * 2013-09-22 2015-03-25 北京有色金属研究总院 Hafnium-base mixed metal material and iodination preparation method thereof
CN104360224A (en) * 2014-11-11 2015-02-18 甘肃电器科学研究院 Preheating switching device for fuse breaking capacity test
CN104630494A (en) * 2015-01-19 2015-05-20 长春师范大学 Electroslag remelting process control system and control method thereof

Similar Documents

Publication Publication Date Title
CN102109827B (en) Method for synchronously and automatically controlling material feeding and power supplying in production of polysilicon
CN103741213A (en) Melting process for polycrystalline silicon cast ingots
CN108203765A (en) A kind of control method for production crystallization hafnium
CN106125785A (en) A kind of electric control circuit based on PLC
CN102548061A (en) Water-cooling copper electrode for producing polycrystalline silicon vacuum furnace
CN202410646U (en) Temperature control system for electric heating reaction kettle
RU132805U1 (en) UNIT FOR AUTOMATIC CONTROL OF TEMPERATURE OF THE ELECTROLYZER
JP3843999B2 (en) Method for producing electrolysis product
CN204324896U (en) A kind of high purity graphite high temperature graphitization stove
CN202887026U (en) Automatic high frequency furnace heating control system
CN103389752B (en) For the temperature-controlled process of semiconductor heat treatment equipment
CN203563209U (en) High-temperature test heating plate for rectification chip
CN204495766U (en) A kind of liquid metal micro-resistance defects inspecting generating means
CN114545865B (en) Polycrystalline silicon growth control method
CN106544726A (en) A kind of crystal pulling, charging, material, the method for separating the continuous drawing silicon single crystal rod that impurity is synchronously carried out
CN201892868U (en) Chemical production recovery control system for electric heating test coke oven
CN102570790B (en) A kind of low-temperature starting method for wind power current transformer
CN105551933A (en) Selenium source fragmentation rectifying device for manufacturing CIGS battery
CN107419300B (en) A kind of intelligence control system and control method of chlorination calcium molten salt electrolysis production calcium metal
CN109717689A (en) The anti-scald hydrogen-rich cup of self-heating constant temperature
CN202331247U (en) Power supply for Kyropoulos-method crystal growth equipment
CN103374758B (en) Crystal growth heating system
CN202744658U (en) Upper and lower heater
CN202671704U (en) Automatic control type dual power polycrystalline silicon ingot furnace
CN202390569U (en) Graphite heater

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20180626