CN108172671A - A kind of AlGaInP base light emitting diode chips and preparation method thereof - Google Patents
A kind of AlGaInP base light emitting diode chips and preparation method thereof Download PDFInfo
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- CN108172671A CN108172671A CN201711417012.4A CN201711417012A CN108172671A CN 108172671 A CN108172671 A CN 108172671A CN 201711417012 A CN201711417012 A CN 201711417012A CN 108172671 A CN108172671 A CN 108172671A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
Abstract
The invention discloses a kind of AlGaInP base light emitting diode chips and preparation method thereof, belong to technical field of semiconductors.Chip includes substrate,It is arranged on the p side electrode of substrate side,And the adhesive layer on substrate another side that is cascading,Mirror layer,First transparency conducting layer,P-type current extending,P-type limiting layer,Active layer,N-type limiting layer,N-type current extending,Second transparency conducting layer and N faces electrode,N-type AlGaAs current extendings can significantly improve current spread effect,The surface that N-type current extending is contacted with the second transparency conducting layer is equipped with the nano column array for the light transmittance that can improve N-type current extending,So as to improve the light extraction efficiency of LED,The one side that p-type current extending is contacted with the first transparency conducting layer is equipped with etching pattern,Most of photon energy that mirror layer reflects is made to enter N-type layer through p-type current extending and is projected at the top of LED,Improve the front light emission rate of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of AlGaInP base light emitting diode chips and its making
Method.
Background technology
AlGaInP based light-emitting diodes (English：Light Emiting Diode, referred to as：LED) it is widely used to vapour
The fields such as licence is bright, full color display and visible optical communication.
AlGaInP base LED chips include the p side electrode stacked gradually, substrate, adhesive layer, mirror layer, first transparent lead
Electric layer, p-type current extending, p-type limiting layer, active layer, N-type limiting layer, N-type current extending, the second transparency conducting layer and N
Face electrode.Wherein, N-type current extending is AlGaInP layers of N-type.
In the implementation of the present invention, inventor has found that the prior art has at least the following problems：
The cirtical angle of total reflection of the interface of AlGaInP bases LED and air is about 20 °, and the light that active layer generates is only very
A small part (about 3%) can be injected in air, and light extraction efficiency is low, and traditional AlGaInP base LED chips use N-type
AlGaInP is as N-type current extending, since the resistivity of AlGaInP is higher, cause its cannot effectively dissufion current, limit
The light extraction efficiency of LED is made.
Invention content
It is low as N-type current extending luminous efficiency using N-type AlGaInP in the prior art in order to solve the problem of, this
Inventive embodiments provide a kind of AlGaInP base light emitting diode chips and preparation method thereof.The technical solution is as follows：
On the one hand, the present invention provides a kind of AlGaInP base light emitting diode chips, the AlGaInP bases light-emitting diodes
Tube chip includes substrate, the p side electrode being arranged in the one side of the substrate and is cascading in the another of the substrate
Adhesive layer, mirror layer, the first transparency conducting layer, p-type current extending, p-type limiting layer, active layer, N-type limitation on one side
Layer, N-type current extending, the second transparency conducting layer and N faces electrode,
The N-type current extending is AlGaAs layers, and the N-type current extending is contacted with second transparency conducting layer
Surface be equipped with nano column array, the one side that the p-type current extending contact with first transparency conducting layer equipped with quarter
Corrosion figure case.
Further, the nano column array includes the nano-pillar of multiple cylinders, and each the nano-pillar is a diameter of
100~300nm, the height of each nano-pillar is 300~500nm, and the spacing of the two neighboring nano-pillar is 1~2 μm.
Further, the etching pattern includes multiple bulge-structures, in the direction of growth of light emitting diode, Mei Gesuo
The height for stating bulge-structure is 300~500nm, in the cross-wise direction of the light emitting diode, each bulge-structure
Width is 3~5 μm, and the spacing of the central point of the two neighboring bulge-structure is 1~3 μm, the growth of the light emitting diode
Direction and the cross-wise direction of the light emitting diode are mutually perpendicular to.
Further, the thickness of the N-type current extending is 2.5~3.5 μm.
Further, doped with Si in the N-type current extending, the doping concentration of Si is 1e18~2e18/cm3。
On the other hand, the present invention provides a kind of production method of AlGaInP base light emitting diode chips, feature exists
In the manufacturing method includes：
N-type buffer layer, N-type AlGaAs current extendings, N-type limiting layer, active layer, p-type limit are sequentially formed on substrate
Preparative layer and p-type current extending；
Etching pattern is formed, and in the p-type on the surface far from the p-type limiting layer of the p-type current extending
The first transparency conducting layer, mirror layer and adhesive layer are sequentially formed on current extending；
The adhesive layer is adhered on substrate；
Remove the substrate and the N-type buffer layer；
P side electrode is formed in the one side far from the adhesive layer of the substrate, in the N-type AlGaAs current expansions
N faces electrode is formed in the one side far from the substrate of layer；
Nano column array is formed on the surface far from the N-type limiting layer of the N-type AlGaAs current extendings；
The second transparency conducting layer is formed on the N-type AlGaAs current extendings.
Further, the N-type AlGaAs current extendings are formed, including：
It is 670~685 DEG C in growth temperature, under conditions of V/III to 20~30, forms the N-type AlGaAs electric currents and expand
Open up layer.
Further, it is described to form etching figure on the surface far from the p-type limiting layer of the p-type current extending
Case, including：
Using hydrochloric acid, hydrogen peroxide, acetic acid mixed solution to the p-type current extending far from the p-type limiting layer
Surface carry out wet etching, formed etching pattern.
Further, described formed on the surface far from the N-type limiting layer of the N-type AlGaAs current extendings receives
Rice column array includes：
SiO is sequentially depositing on the N-type AlGaAs current extendings2Layer and ito thin film；
Wet etching is carried out to the ito thin film using hydrochloric acid solution, forms ITO nano column arrays；
By the use of the ITO nano column arrays as SiO described in mask etching2Layer forms SiO2Nano column array；
Utilize the SiO2Nano column array is as N-type AlGaAs current extendings described in mask etching, in the N-type
The surface far from the N-type limiting layer of AlGaAs current extendings forms nano column array；
Remove the remaining SiO2Nano column array.
Further, it is described to utilize the SiO2Nano column array is as N-type AlGaAs current expansions described in mask etching
Layer forms nano column array on the surface far from the N-type limiting layer of the N-type AlGaAs current extendings, including：
Using the mixed gas of HBr and Ar is carried out to the N-type AlGaAs current extendings inductively coupled plasma quarter
Erosion.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
By the way that N-type current extending is set as AlGaAs layers, AlGaAs layers have very low resistivity, can significantly carry
High current diffusion effect, so as to improve the luminous efficiency of light-emitting diode chip for backlight unit.And N-type current extending and the second electrically conducting transparent
The surface of layer contact is equipped with nano column array, and nano column array can improve the light transmittance of N-type current extending, so as to improve hair
The light extraction efficiency of optical diode.The one side that p-type current extending is contacted with the first transparency conducting layer is equipped with etching pattern, the quarter
Corrosion figure case can improve the light transmittance of p-type current extending so that most of photon of active area transmitting can more penetrate P
Type current extending when most of photon that mirror layer reflects reaches p-type current extending, can penetrate P to mirror layer
Type current extending enters N-type layer and is projected from LED top, improves the front light emission rate of light emitting diode.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structure diagram of AlGaInP base light emitting diode chips provided in an embodiment of the present invention；
Fig. 2 is a kind of method stream of the production method of AlGaInP base light emitting diode chips provided in an embodiment of the present invention
Cheng Tu；
Fig. 2 a are the structure diagram of the AlGaInP base light emitting diode chips after step 201 performs；
Fig. 2 b are the structure diagram of the AlGaInP base light emitting diode chips after step 202 performs；
Fig. 2 c are the structure diagram of the AlGaInP base light emitting diode chips after step 203 performs；
Fig. 2 d are the structure diagram of the AlGaInP base light emitting diode chips after step 204 performs；
Fig. 2 e are the structure diagram of the AlGaInP base light emitting diode chips after step 205 performs；
Fig. 2 f are the structure diagram of the AlGaInP base light emitting diode chips after step 206 performs；
Fig. 2 g are the structure diagram of the AlGaInP base light emitting diode chips after step 207 performs；
Fig. 2 h are the structure diagram of the AlGaInP base light emitting diode chips after step 208 performs；
Fig. 2 i are the structure diagram of the AlGaInP base light emitting diode chips after step 209 performs；
Fig. 2 j are the structure diagram of the AlGaInP base light emitting diode chips after step 211 performs.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
An embodiment of the present invention provides a kind of AlGaInP base light emitting diode chips, Fig. 1 is provided in an embodiment of the present invention
A kind of structure diagram of AlGaInP base light emitting diode chips, as shown in Figure 1, the AlGaInP based light-emitting diodes include base
Plate 2, the p side electrode 1 being arranged in the one side of substrate 2 and the adhesive layer 3 being cascading on the another side of substrate,
Mirror layer 4, the first transparency conducting layer 5, p-type current extending 6, p-type limiting layer 7, active layer 8, N-type limiting layer 9, N-type electricity
Flow extension layer 10, the second transparency conducting layer 11 and N faces electrode 12.
N-type current extending 10 is AlGaAs layers, the surface that N-type current extending 10 is contacted with the second transparency conducting layer 11
Equipped with nano column array a, the one side that p-type current extending 6 is contacted with the first transparency conducting layer 5 is equipped with etching pattern b.
For the embodiment of the present invention by the way that N-type current extending is set as AlGaAs layers, AlGaAs layers have very low resistance
Rate can significantly improve current spread effect, so as to improve the luminous efficiency of light-emitting diode chip for backlight unit.And N-type current extending
The surface contacted with the second transparency conducting layer is equipped with nano column array, and nano column array can improve the saturating of N-type current extending
Light rate, so as to improve the light extraction efficiency of light emitting diode.It is set in the one side that p-type current extending is contacted with the first transparency conducting layer
There is etching pattern, which can improve the light transmittance of p-type current extending so that most of photon of active area transmitting
Can be more through p-type current extending to mirror layer, most of photon that mirror layer reflects reaches the expansion of p-type electric current
When opening up layer, N-type layer can be entered through p-type current extending and is projected from LED top, is improving light emitting diode just
Face light emission rate.
Wherein, doped with Si in N-type current extending, the doping concentration of Si is 1e18~2e18/cm3。
Further, nano column array a includes the nano-pillar of multiple cylinders, each nano-pillar a diameter of 100~
300nm, the height of each nano-pillar is 300~500nm, and the spacing of two neighboring nano-pillar is 1~2 μm.At this point, N-type electric current
The light transmittance of extension layer 10 is best, and the luminous efficiency of light emitting diode is best.
Wherein, nano column array a is that the one side contacted with the second transparency conducting layer 11 of N-type current extending 10 is carried out
What roughening obtained, the material identical of nano column array a and N-type current extending 10.
Further, etching pattern b includes multiple bulge-structures, in the direction of growth of light emitting diode, each protrusion
The height of structure is 300~500nm, and in the cross-wise direction of light emitting diode, the width of each bulge-structure is 3~5 μm, phase
The spacing of the central point of adjacent two bulge-structures is 1~3 μm, wherein, the cross-wise direction of light emitting diode is any in section
Direction, the direction of growth and the cross-wise direction of light emitting diode are mutually perpendicular to.At this point, setting etching pattern b can improve p-type electric current
The light transmittance of extension layer 6 so that most of photon of active area transmitting can be more through p-type current extending 6 to reflection
Mirror layer 4, when most of photon that mirror layer 4 reflects reaches p-type current extending 6, can through p-type current extending 6 into
Enter N-type layer and projected from LED top, the front light emission rate of light emitting diode is best.
Wherein, etching pattern b is to carry out wet method quarter to the one side close to the first transparency conducting layer 5 of p-type current extending 6
What erosion obtained, the material identical of etching pattern b and p-type current extending 6.
Further, the first transparency conducting layer 5 and the second transparency conducting layer 11 are made of Ag nano-materials, thickness
It is 300~500nm.In practical applications, the first transparency conducting layer 5 and the second transparency conducting layer 11 or carbon nanotube
Or grapheme material is made.
It should be noted that Ag nano wires have excellent electric conductivity, translucency and flexible resistance, and it is easily prepared, into
This is cheap.
In the present embodiment, low speed spin-coating method may be used, the first transparency conducting layer 5 is arranged on p-type current extending 6
On, the second transparency conducting layer 11 is arranged on N-type current extending 10, low speed spin-coating method can overcome Ag nano wire adhesions
The problem of poor, makes the first transparency conducting layer 5 be evenly distributed on the surface of p-type current extending 6, makes the second transparency conducting layer 11
It is evenly distributed on the surface of N-type current extending 10.Wherein during low speed spin coating, the speed of rotation can be 270rpm.
Optionally, p side electrode 1 is made of Ti/Au materials.
Optionally, silicon may be used in substrate 2 or sapphire material is made.
Wherein, substrate 2 plays the role of fixing and supporting to chip.The thermal conductivity of silicon and sapphire material is high, is conducive to
Solve the heat dissipation problem of high-power and high-luminance AlGaInP base LED chips.In addition, what silicon or sapphire substrate sent out active layer 8
Light can effectively improve external quantum efficiency without absorption.
Optionally, adhesive layer 3 can be Ag or Au, and thickness can be 1~2 μm.
Optionally, mirror layer 4 can include alternately stacked first sublayer of N number of period and the second sublayer, the first sublayer
Material can be SiO2, thickness can be 15~20nm；The material of second sublayer can be Ag, Au or Al, and thickness can be with
For 300~400nm.Wherein, 10≤N≤40, N are positive integer.By setting alternately stacked first sublayer of N number of period and second
Sublayer, and the thickness of the first sublayer and the second sublayer is designed according to the principle of reflection of distribution Bragg reflector so that the
One sublayer meets distribution Bragg reflector with the second sublayer and (is alternately arranged group by multilayer high refractive index and low-index material
Into periodic structure, and per layer material optical thickness centered on reflection wavelength a quarter) principle of reflection, so as to play
Reflecting effect.Preferably, 15≤N≤25.
Optionally, p-type current extending 6 is GaP layers, and thickness is 1.5~2.5 μm.Mixed with Mg in p-type current extending 6,
The doping concentration of Mg is 2e18~5e18/cm3。
Optionally, p-type limiting layer 7 is AlInP layers, and thickness is 250~350nm.Mixed with Mg in p-type limiting layer 7, Mg's mixes
Miscellaneous a concentration of 8e17~1e18/cm3。
Optionally, the thickness of active layer 8 is 150~200nm, and active layer 8 includes alternately stacked quantum well layer and quantum
Barrier layer, the number of plies of quantum barrier layer is identical with the number of plies of quantum well layer, and the number of plies of quantum well layer can be 12~18 layers.
Optionally, N-type limiting layer 9 is AlInP layers, and thickness is 250~350nm.Mixed with Si in N-type limiting layer 9, Si's mixes
Miscellaneous a concentration of 1e18~2e18/cm3。
Optionally, N-type current extending 10 is AlGaAs layers, and thickness is 2.5~3.5 μm.It is mixed in N-type current extending 10
There is Si, the doping concentration of Si is 1e18~2e18/cm3。
Optionally, N faces electrode 12 is made of Ni/Ge/Au materials.
Embodiment two
An embodiment of the present invention provides a kind of production method of AlGaInP base light emitting diode chips, suitable for embodiment
The one AlGaInP base light emitting diode chips provided, Fig. 2 is a kind of AlGaInP bases light-emitting diodes provided in an embodiment of the present invention
The method flow diagram of the production method of tube chip, as shown in Fig. 2, the production method includes：
Step 201：N-type GaAs buffer layers, N-type AlGaAs current extendings, N-type are sequentially formed on gaas substrates
AlInP limiting layers, active layer, p-type AlInP limiting layers and p-type GaP current extendings.
Fig. 2 a are the structure diagram of the AlGaInP base light emitting diode chips after step 201 performs.Wherein, 1 is
GaAs substrates, 2 be N-type GaAs buffer layers, and 3 be N-type AlGaAs current extendings, and 4 be N-type AlInP limiting layers, and 5 be active layer,
6 be p-type AlInP limiting layers, and 7 be p-type GaP current extendings.
Specifically, which can include：
Using Metalorganic Chemical Vapor Deposition (English：Metal-organic Chemical Vapor
Deposition, referred to as：MOCVD N-type GaAs buffer layers, N-type AlGaAs current extendings, N) are grown successively on gaas substrates
Type AlInP limiting layers, active layer, p-type AlInP limiting layers, p-type GaP current extendings；
Optionally, the growth temperature of p-type GaP current extendings can be 670~685 DEG C, and thickness can be 1.5~2.5 μ
M, V/III than that can be 20~30.Mixed with Mg in p-type GaP current extendings, the doping concentration of Mg can be 2e18~5e18/
cm3。
Optionally, the growth temperature of p-type AlInP limiting layers can be 670~685 DEG C, and thickness can be 250~350nm,
V/III than that can be 20~30.Mixed with Mg in p-type AlInP limiting layers, the doping concentration of Mg can be 8e17~1e18/cm3。
Optionally, the growth temperature of active layer can be 670~685 DEG C, and thickness can be 150~200nm, and V/III compares
Can be 20~30.Active layer includes alternately stacked quantum well layer and quantum barrier layer, the number of plies and quantum well layer of quantum barrier layer
The number of plies it is identical, the number of plies of quantum well layer can be 12~18 layers.
Optionally, the growth temperature of N-type AlInP limiting layers can be 670~685 DEG C, and thickness can be 250~350nm,
V/III than that can be 20~30.Mixed with Si in N-type AlInP limiting layers, the doping concentration of Si can be 1e18~2e18/cm3。
Optionally, the growth temperature of N-type AlGaAs current extendings can be 670~685 DEG C, thickness can be 2.5~
3.5 μm, V/III than that can be 20~30.Mixed with Si in N-type AlGaAs current extendings, the doping concentration of Si can be 1e18
~2e18/cm3。
Optionally, the growth temperature of N-type GaAs buffer layers can be 650~670 DEG C, and thickness can be 150~300nm,
V/III than that can be 20~30.
Wherein, V/III than the molal weight ratio for V valency atom and III valency atom, and AeB represents A*10B。
Step 202：Etching pattern is formed, and in p-type electric current on the surface of the separate p-type limiting layer of p-type current extending
The first transparency conducting layer, mirror layer and adhesive layer are sequentially formed on extension layer.
Fig. 2 b are the structure diagram of the AlGaInP base light emitting diode chips after step 202 performs.Wherein, 7 be thick
P-type GaP current extendings after change, 8 be the first transparency conducting layer, and 9 be mirror layer, and 10 be adhesive layer.
Specifically, which can include：
Using hydrochloric acid, hydrogen peroxide, acetic acid mixed solution (volume ratio can be 1.5:1.5:7) to p-type GaP current expansions
The surface of the separate p-type AlInP limiting layers of layer carries out wet etching, forms etching pattern.
Optionally, etching pattern includes multiple bulge-structures, in the direction of growth of light emitting diode, each bulge-structure
Height for 300~500nm, in the cross-wise direction of light emitting diode, the width of each bulge-structure is 3~5 μm, adjacent two
The spacing of the central point of a bulge-structure is 1~3 μm, wherein, the cross-wise direction of light emitting diode is the either direction in section,
The direction of growth of light emitting diode is mutually perpendicular to cross-wise direction.At this point, the reflectivity of p-type current extending is best, luminous two
The luminous efficiency of pole pipe is best.
The first transparency conducting layer, mirror layer, adhesive layer are sequentially formed on p-type GaP current extendings.
Optionally, the first transparency conducting layer is formed, can be included：
First is formed on N-type AlGaAs current extendings using low speed spin-coating method (rate can be 270rpm) transparent to lead
Electric layer.
Optionally, the first transparency conducting layer may be used Ag nano wires and be made, and thickness can be 300~500nm.In reality
In, the first transparency conducting layer may be carbon nanotube or graphene.
Optionally, mirror layer, adhesive layer are formed, can be included：
Mirror layer is deposited on the first transparency conducting layer；
Anneal 1min at 350 DEG C, it is ensured that mirror layer and the first transparency conducting layer form Ohmic contact；
Adhesive layer is deposited on mirror layer.
Optionally, mirror layer can include alternately stacked first sublayer of N number of period and the second sublayer, the first sublayer
Material can be SiO2, thickness can be 15~20nm；The material of second sublayer can be Ag, Au or Al, and thickness can be
300~400nm.Wherein, 10≤N≤40, N are positive integer.By setting alternately stacked first sublayer of N number of period and the second son
Layer, and the thickness of the first sublayer and the second sublayer is designed according to the principle of reflection of distribution Bragg reflector so that first
Sublayer meets distribution Bragg reflector with the second sublayer and (is alternately arranged and formed by multilayer high refractive index and low-index material
Periodic structure, and centered on the optical thickness per layer material reflection wavelength a quarter) principle of reflection, it is anti-so as to play
Penetrate effect.
Optionally, the material of adhesive layer can be Ag or Au, and thickness can be 1~2 μm.
Step 203：Adhesive layer is adhered on substrate.
Fig. 2 c are the structure diagram of the AlGaInP base light emitting diode chips after step 203 performs.Wherein, 11 are
Substrate.
Specifically, which can include：
In 350 DEG C of N2Under environment, adhesive layer is bonded 1 minute with substrate so that adhesive layer is adhered on substrate.
Optionally, silicon or sapphire may be used in the material of substrate.
It should be noted that substrate plays the role of fixing and supporting to chip.The thermal conductivity of silicon and sapphire material is high,
Advantageously account for the heat dissipation problem of high-power and high-luminance AlGaInP base LED chips.In addition, silicon or sapphire substrate are to Quantum Well
The light that layer is sent out can effectively improve external quantum efficiency without absorption.
Step 204：Remove GaAs substrates, N-type GaAs buffer layers.
Fig. 2 d are the structure diagram of the AlGaInP base light emitting diode chips after step 204 performs.
Specifically, which can include:
Using ammonium hydroxide and hydrogen peroxide, (volume ratio can be 1：5) mixed solution removal GaAs substrates and N-type GaAs bufferings
Layer.
Step 205：P side electrode is formed in the one side of the separate adhesive layer of substrate, on N-type AlGaAs current extendings
Form N faces electrode.
Fig. 2 e are the structure diagram of the AlGaInP base light emitting diode chips after step 205 performs.Wherein, 12 be P
Face electrode, 13 be N faces electrode.
Specifically, which can include：
N faces electrode is deposited on N-type AlGaAs current extendings.
Optionally, the material of N faces electrode can be Ni/Ge/Au.
P side electrode is deposited on substrate.
Optionally, the material of p side electrode can be Ti/Au.
Step 206：SiO is sequentially depositing on N-type AlGaAs current extendings2Layer and tin indium oxide (English：Indium
Tin oxide, referred to as：ITO) film.
Fig. 2 f are the structure diagram of the AlGaInP base light emitting diode chips after step 206 performs.Wherein, 14 are
SiO2Layer, 15 be ito thin film.
Specifically, which can include：
Use plasma enhanced chemical vapor deposition method (English：Plasma Enhanced Chemical Vapor
Deposition, referred to as：PECVD) SiO is deposited on N-type AlGaAs current extendings2Layer.
Using electron-beam vapor deposition method in SiO2Ito thin film is deposited on layer.
Step 207：Wet etching is carried out to ito thin film using hydrochloric acid solution, forms ITO nano column arrays.
Fig. 2 g are the structure diagram of the AlGaInP base light emitting diode chips after step 207 performs.
In the concrete realization, ITO is In2O3And SnO2Mixture, the mass ratio of the two is 9:1.ITO is with amorphous state oxygen
Based on changing indium tin, therefore ITO sheets are as amorphous metal matrix.When ITO contacts hydrochloric acid, In therein2O3Quilt is reacted with hydrochloric acid
Dissolving, SnO2Molecule self-assemble under the action of Van der Waals force forms many nanoscale crystalline phases, that is, is self-assembly of ITO and receives
Rice column array.Wherein, self assembly refers to basic structural unit (atom, molecule, nano material etc.) by the mutual of non-covalent bond
Effect spontaneously forms a kind of technology of ordered structure.
Step 208：By the use of ITO nano column arrays as mask etching SiO2Layer forms SiO2Nano column array.
Fig. 2 h are the structure diagram of the AlGaInP base light emitting diode chips after step 208 performs.
Specifically, which can include：
Under the protection of ITO nano column arrays, CHF is used3、CF4Or CF4And H2Mixed gas to SiO2Layer carries out anti-
Answer ion etching (English：Reactive Ion Etching, referred to as：RIE), SiO is formed2Nano column array.
Step 209：Utilize SiO2Nano column array is as mask etching N-type AlGaAs current extendings, in N-type AlGaAs
Current expansion layer surface forms nano column array.
Fig. 2 i are the structure diagram of the AlGaInP base light emitting diode chips after step 209 performs.
Specifically, which can include：
In SiO2Under the protection of nano column array, using HBr and Ar mixed gas to N-type AlGaAs current extendings into
Row inductively coupled plasma (English：Inductively Coupled Plasma, referred to as：ICP it) etches, in N-type
Nano column array is formed on the surface of the separate N-type AlInP limiting layers of AlGaAs current extendings
Optionally, nano column array includes the nano-pillar of multiple cylinders, a diameter of 100~300nm of each nano-pillar,
The height of each nano-pillar is 300~500nm, and the spacing of two neighboring nano-pillar is 1~2 μm.At this point, N-type current extending
10 light transmittance is best, and the luminous efficiency of light emitting diode is best.
It should be noted that with the increase of ICP etch periods, the mixed gas of HBr and Ar will not significantly corrode nanometer
The diameter and density of the side wall of column, i.e. nano-pillar will not change.
Step 210：Remove remaining SiO2Nano column array.
Specifically, which can include：
Remaining SiO is removed using potassium hydroxide solution or hydrofluoric acid solution2Nano column array.
Step 211：The second transparency conducting layer is formed on N-type AlGaAs current extendings.
Fig. 2 j are the structure diagram of the AlGaInP base light emitting diode chips after step 211 performs.Wherein, 16 are
Second transparency conducting layer.
Optionally, which can include：
Second is formed on N-type AlGaAs current extendings using low speed spin-coating method (rate can be 270rpm) transparent to lead
Electric layer.
Optionally, the second transparency conducting layer is Ag nano wires, and thickness is 300~500nm.In practical applications, second thoroughly
Bright conductive layer may be that carbon nanotube or grapheme material are made.
Using the AlGaInP base light emitting diode chips that the production method of embodiment two makes and traditional AlGaInP bases
Light-emitting diode chip for backlight unit is compared, and light extraction efficiency improves 25%, and optical output power improves 40%.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of AlGaInP base light emitting diode chips, the AlGaInP base light emitting diode chips include substrate, are arranged on
P side electrode in the one side of the substrate and adhesive layer, the speculum being cascading on the another side of the substrate
Layer, the first transparency conducting layer, p-type current extending, p-type limiting layer, active layer, N-type limiting layer, N-type current extending, second
Transparency conducting layer and N faces electrode, which is characterized in that
The N-type current extending is AlGaAs layers, the table that the N-type current extending is contacted with second transparency conducting layer
Face is equipped with nano column array, and the one side that the p-type current extending is contacted with first transparency conducting layer is equipped with etching and schemes
Case.
2. AlGaInP base light emitting diode chips according to claim 1, which is characterized in that the nano column array packet
The nano-pillar of multiple cylinders is included, each a diameter of 100~300nm of the nano-pillar, the height of each nano-pillar is
300~500nm, the spacing of the two neighboring nano-pillar is 1~2 μm.
3. AlGaInP base light emitting diode chips according to claim 1 or 2, which is characterized in that the etching pattern packet
Multiple bulge-structures are included, in the direction of growth of light emitting diode, the height of each bulge-structure is 300~500nm,
In the cross-wise direction of the light emitting diode, the width of each bulge-structure is 3~5 μm, the two neighboring protrusion knot
The spacing of the central point of structure is 1~3 μm, the direction of growth of the light emitting diode and the cross-wise direction phase of the light emitting diode
It is mutually vertical.
4. AlGaInP base light emitting diode chips according to claim 1 or 2, which is characterized in that the N-type electric current expands
The thickness for opening up layer is 2.5~3.5 μm.
5. AlGaInP base light emitting diode chips according to claim 1 or 2, which is characterized in that the N-type electric current expands
It opens up doped with Si in layer, the doping concentration of Si is 1e18~2e18/cm3。
6. a kind of production method of AlGaInP base light emitting diode chips, which is characterized in that the manufacturing method includes：
N-type buffer layer, N-type AlGaAs current extendings, N-type limiting layer, active layer, p-type limiting layer are sequentially formed on substrate
With p-type current extending；
Etching pattern is formed, and in the p-type electric current on the surface far from the p-type limiting layer of the p-type current extending
The first transparency conducting layer, mirror layer and adhesive layer are sequentially formed on extension layer；
The adhesive layer is adhered on substrate；
Remove the substrate and the N-type buffer layer；
P side electrode is formed in the one side far from the adhesive layer of the substrate, in the N-type AlGaAs current extendings
N faces electrode is formed in one side far from the substrate；
Nano column array is formed on the surface far from the N-type limiting layer of the N-type AlGaAs current extendings；
The second transparency conducting layer is formed on the N-type AlGaAs current extendings.
7. production method according to claim 6, which is characterized in that form the N-type AlGaAs current extendings, wrap
It includes：
It is 670~685 DEG C in growth temperature, under conditions of V/III to 20~30, forms the N-type AlGaAs current extendings.
8. production method according to claim 6, which is characterized in that the separate institute in the p-type current extending
The surface for stating p-type limiting layer forms etching pattern, including：
Using hydrochloric acid, hydrogen peroxide, acetic acid mixed solution to table of the p-type current extending far from the p-type limiting layer
Face carries out wet etching, forms etching pattern.
9. production method according to claim 6, which is characterized in that described in the N-type AlGaAs current extendings
Surface far from the N-type limiting layer forms nano column array, including：
SiO is sequentially depositing on the N-type AlGaAs current extendings2Layer and ito thin film；
Wet etching is carried out to the ito thin film using hydrochloric acid solution, forms ITO nano column arrays；
By the use of the ITO nano column arrays as SiO described in mask etching2Layer forms SiO2Nano column array；
Utilize the SiO2Nano column array is as N-type AlGaAs current extendings described in mask etching, in the N-type AlGaAs
The surface far from the N-type limiting layer of current extending forms nano column array；
Remove the remaining SiO2Nano column array.
10. production method according to claim 9, which is characterized in that described to utilize the SiO2Nano column array is used as and covers
Film etches the N-type AlGaAs current extendings, in the N-type AlGaAs current extendings far from the N-type limiting layer
Surface forms nano column array, including：
Sense coupling is carried out to the N-type AlGaAs current extendings using the mixed gas of HBr and Ar.
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| WO2020001007A1 (en) * | 2018-06-28 | 2020-01-02 | 厦门市三安光电科技有限公司 | Light emitting diode |
| CN111180561A (en) * | 2019-12-27 | 2020-05-19 | 华灿光电(苏州）有限公司 | AlGaInP-based light emitting diode chip and manufacturing method thereof |
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