CN108169931B - 一种片上可调谐多模干涉反射镜 - Google Patents
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
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Abstract
一种片上可调谐多模干涉反射镜,包括:衬底、所述衬底上的器件层和所述器件层上的保护层,其中所述器件层中形成有双端口多模干涉反射镜和电极,所述电极为微加热电极或电流注入电极,所述双端口多模干涉反射镜包括输入波导、第一锥形波导、多模波导、与所述多模波导连接的反射区域、第二锥形波导和输出波导,所述输入波导通过所述第一锥形波导与所述多模波导相连,所述输出波导通过所述第二锥形波导与所述多模波导相连,所述电极位于所述多模波导和/或所述反射区域中。本发明的片上可调谐多模干涉反射镜有尺寸小、损耗低、成本低、易于集成等优点,与传统半导体光电子工艺和CMOS工艺兼容,在光子集成芯片领域有广阔的应用前景。
Description
技术领域
本发明涉及半导体光电子器件技术领域,尤其涉及一种片上可调谐多模干涉反射镜,可应用于光子集成芯片、可调谐半导体激光器、光学传感器等领域。
背景技术
反射镜是构成激光腔的重要元件。对于边发射半导体激光器,其激光腔可以由半导体材料晶体的两个解理面平行排列构成,半导体晶体解理面和空气构成的反射镜的反射率约为0.3,反射相位为0。这种由半导体晶体解理面构成的反射镜的反射率和反射相位很难改变,无法满足一些特定应用场合,所以半导体晶体解理面构成的反射镜一般用于分立的Fabry-Perot半导体激光器。
在可调谐半导体激光器、光学传感器、光子集成芯片等应用领域,片上可调谐反射镜是构成光子回路必不可少的光子器件之一。单片集成可调谐半导体激光器光子芯片采用布拉格反射镜(DBR)构建激光腔的一个腔面,利用等离子体色散效应实现DBR反射波长可调谐,但是制作这种布拉格反射镜需要二次外延技术,难以调谐反射率和反射相位。外腔可调谐激光器由三五族半导体增益芯片和可调谐反射镜构成,可调谐反射镜为聚合物布拉格波导光栅,或者为硅基布拉格光栅,利用聚合物材料的热光效应和硅材料的热光效应或者等离子体色散效应实现反射波长可调谐,它们的反射率和反射相位难以调谐。
发明内容
(一)要解决的技术问题
有鉴于此,本发明的主要目的是提供一种片上可调谐多模干涉反射镜,以期解决上述提及的技术问题中的至少之一。
(二)技术方案
为实现上述目的,本发明的技术方案如下:
本发明提供一种片上可调谐多模干涉反射镜,其特征在于,包括:衬底、所述衬底上的器件层和所述器件层上的保护层,其中所述器件层中形成有双端口多模干涉反射镜和电极,所述电极为微加热电极或电流注入电极,所述双端口多模干涉反射镜包括输入波导、第一锥形波导、多模波导、与所述多模波导连接的反射区域、第二锥形波导和输出波导,所述输入波导通过所述第一锥形波导与所述多模波导相连,所述输出波导通过所述第二锥形波导与所述多模波导相连,所述电极位于所述多模波导和/或所述反射区域中,入射光依次经过所述输入波导、所述第一锥形波导和所述多模波导进入所述反射区域,经反射后,依次经过所述多模波导、所述第一锥形波导和所述输入波导返回;或者依次经过所述多模波导、所述第二锥形波导和所述输出波导后输出。
可选地,所述反射区域具有两个与波导轴向成45°的反射面,两个所述反射面垂直相交处位于所述双端口多模干涉反射镜的中心轴线上。
所述反射区域的反射面为刻蚀镜面、解理面、介质膜反射面或者镀金属反射面。
可选地,所述输入波导和所述输出波导为单模波导。
可选地,所述输入波导、所述第一锥形波导、所述多模波导、所述第二锥形波导和输出波导的材料独立地选自聚合物、氮化硅、氮氧化硅、二氧化硅(Silica)、氧化钛、GaAs基半导体材料、InP基半导体材料、GaSb基半导体材料、GaN基半导体材料、Si材料或Ge材料。
可选地,所述电极的形状为矩形、方形、圆形或椭圆形。
可选地,所述电极的数量为1个或多个。
可选地,所述电极为微加热电极时,电极材料选自Ti、Au或TiN。
可选地,所述电极为电流注入电极时,电极材料选自Al、Ag、Au、TiAu、TiPtAu或AuGeNiAu。
所述片上可调谐多模干涉反射镜的工作波长覆盖深紫外到中远红外波段。
(三)有益效果
从上述技术方案可以看出,本发明具有以下有益效果:
1、本发明的片上可调谐多模干涉反射镜为平面结构,可以用于片上光子集成回路;
2、本发明的片上可调谐多模干涉反射镜可以实现反射率可调谐和反射相位可调谐,用于可调谐激光器;
3、本发明的片上可调谐多模干涉反射镜有尺寸小、损耗低、成本低、易于集成等优点,与传统半导体光电子工艺和CMOS工艺兼容,在光子集成芯片领域有广阔的应用前景。
附图说明
图1为本发明一个实施例的片上可调谐多模干涉反射镜三维结构示意图;
图2为本发明实施例中硅基片上可调谐多模干涉反射镜随折射率改变的反射率和透射率;
图3为本发明实施例中硅基片上可调谐多模干涉反射镜随折射率改变的反射相位和透射相位。
附图标记说明:
1-输入波导;2-输出波导;3-锥形波导;4-电极;5-多模波导;6-反射区域。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明作进一步的详细说明。
图1是本发明的片上可调谐多模干涉反射镜三维结构示意图。本发明提供的片上可调谐多模干涉反射镜包括衬底、所述衬底上的器件层和所述器件层上的保护层,其中所述器件层中形成有双端口多模干涉反射镜和电极,电极为微加热电极或电流注入电极,具体地,双端口多模干涉反射镜包括输入波导1、输出波导2、锥形波导3、电极4、多模波导5、和多模波导5相连的反射区域6,其中反射区域6的两个反射面和波导轴向成45°角度,电极4可以位于多模波导5和/或反射区域6中。入射光依次经过输入波导1、锥形波导3和多模波导5进入反射区域6,经反射后,依次经过多模波导5、锥形波导3和输入波导1返回,这部分光为反射光,可以用于片上光反馈构成谐振器和激光器等;或者依次经过多模波导5、锥形波导3和输出波导2输出,这部分光为透射光,可以用于片上输出进入后接调制器、耦合器、分束器、探测器等。
衬底可以为硅片、GaAs片、InP片、聚合物、GaN片、Ge片、GaSb片、介质材料等,器件层的材料可以选自聚合物、氮化硅、氮氧化硅、二氧化硅(Silica)、氮化铝、氧化钛、GaAs基半导体材料、InP基半导体材料、GaSb基半导体材料、GaN基半导体材料、Si材料、或Ge材料等,保护层的材料选自聚合物、氮化硅、氮氧化硅、二氧化硅(Silica)、比器件层折射率小的GaAs基半导体材料、比器件层折射率小的InP基半导体材料、比器件层折射率小的GaSb基半导体材料、比器件层折射率小GaN基半导体材料等。
基于等离子体色散效应或者热光效应,利用电极4可以调谐本发明所述的片上多模干涉反射镜的反射率和透射率。本发明所述的片上可调谐多模干涉反射镜为平面结构,可以用于片上光子集成回路;可以实现反射率可调谐和反射相位可调谐,用于可调谐激光器;具有尺寸小、损耗低、成本低、易于集成等优点,与传统半导体光电子工艺和CMOS工艺兼容,在光子集成芯片领域有广阔的应用前景。
所述输入波导1和输出波导2为单模波导,所用材料为聚合物、氮化硅、氮氧化硅、二氧化硅(Silica)、氧化钛、GaAs基半导体材料、InP基半导体材料、GaSb基半导体材料、GaN基半导体材料、Si材料、或Ge材料等。
所述锥形波导3连接输入波导1/输出波导2和多模波导5,降低损耗;所用材料为聚合物、氮化硅、氮氧化硅、二氧化硅(Silica)、氧化钛、GaAs基半导体材料、InP基半导体材料、GaSb基半导体材料、GaN基半导体材料、Si材料、或Ge材料等。
所述和多模波导5相连的反射区域6具有两个与波导轴向成45°的反射面,两个所述刻蚀面垂直相交处位于所述多模干涉自成像波导的轴线上;所用材料为聚合物、氮化硅、氮氧化硅、二氧化硅(Silica)、氧化钛、GaAs基半导体材料、InP基半导体材料、GaSb基半导体材料、GaN基半导体材料、Si材料、或Ge材料等。
所述和多模波导5相连的反射区域6具有两个与波导轴向成45°的反射面为刻蚀镜面、解理面、介质膜反射面、或者镀金属反射面等。
所述电极4为微加热电极或者电流注入电极,电极4的形状可以为矩形、方形、圆形、椭圆形等,数量可以为1个或多个。
所述电极4处于多模波导和/或反射区域,当电极4为微加热电极时,材料选自Ti、Au或TiN等。
当电极4为电流注入电极时,材料选自Al、Ag、Au、TiAu、TiPtAu、或AuGeNiAu等。
所述片上可调谐多模干涉反射镜的工作波长覆盖深紫外到中远红外波段。
以下结合具体实施例对本发明提供的一种片上可调谐多模干涉反射镜作进一步说明。
实施例1
在本实施例中,片上可调谐多模干涉反射镜基于绝缘体上硅(Silicon onInsulator,SO1)材料,即硅基片上可调谐多模干涉反射镜,如图1所示。输入波导1和输出波导2为硅波导,波导宽度为400纳米,波导高度为220纳米;多模波导5宽度为6微米,长度为18微米;反射区域6宽度为6微米,反射区长度为3微米。采用热光效应实现可调谐,即电极4为微加热电极,电极尺寸长度为5微米,宽度为1.5微米。加热电极4和硅波导之间的距离为2微米。图2为硅基片上可调谐多模干涉反射镜随折射率改变的反射率和透射率,微加热电极基于热光效应改变多模波导5和反射区域6的折射率,实现反射率和透射率的可调谐。图3为硅基片上可调谐多模干涉反射镜随折射率改变的反射相位和透射相位,微加热电极基于热光效应改变多模波导5和反射区域6的折射率,实现反射相位和透射相位的可调谐。图1所示的硅基片上可调谐多模干涉反射镜可用于硅基光子集成芯片。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种片上可调谐多模干涉反射镜,其特征在于,包括:衬底、所述衬底上的器件层和所述器件层上的保护层,其中所述器件层中形成有双端口多模干涉反射镜和电极,所述电极为微加热电极或电流注入电极,
所述双端口多模干涉反射镜包括输入波导、第一锥形波导、多模波导、与所述多模波导连接的反射区域、第二锥形波导和输出波导,所述输入波导通过所述第一锥形波导与所述多模波导相连,所述输出波导通过所述第二锥形波导与所述多模波导相连,所述电极位于所述多模波导和/或所述反射区域中,
入射光依次经过所述输入波导、所述第一锥形波导和所述多模波导进入所述反射区域,经反射后,依次经过所述多模波导、所述第一锥形波导和所述输入波导返回;或者依次经过所述多模波导、所述第二锥形波导和所述输出波导后输出;
其中,所述电极用于调节所述多模波导和所述反射区域的折射率,以调谐所述可调谐多模干涉反射镜的反射率及反射相位。
2.如权利要求1所述的片上可调谐多模干涉反射镜,其中,所述反射区域具有两个与波导轴向成45°的反射面,两个所述反射面垂直相交处位于所述双端口多模干涉反射镜的中心轴线上。
3.如权利要求2所述的片上可调谐多模干涉反射镜,其中所述反射区域的反射面为刻蚀镜面、解理面、介质膜反射面或者镀金属反射面。
4.如权利要求1所述的片上可调谐多模干涉反射镜,其中,所述输入波导和所述输出波导为单模波导。
5.如权利要求1所述的片上可调谐多模干涉反射镜,其中,所述输入波导、所述第一锥形波导、所述多模波导、所述第二锥形波导和输出波导的材料独立地选自聚合物、氮化硅、氮氧化硅、二氧化硅(Silica)、氧化钛、GaAs基半导体材料、InP基半导体材料、GaSb基半导体材料、GaN基半导体材料、Si材料或Ge材料。
6.如权利要求1所述的片上可调谐多模干涉反射镜,其中,所述电极的形状为矩形、方形、圆形或椭圆形。
7.如权利要求1所述的片上可调谐多模干涉反射镜,其中,所述电极的数量为1个或多个。
8.如权利要求1所述的片上可调谐多模干涉反射镜,其中,所述电极为微加热电极时,电极材料选自Ti、Au或TiN。
9.如权利要求1所述的片上可调谐多模干涉反射镜,其中,所述电极为电流注入电极时,电极材料选自Al、Ag、Au、TiAu、TiPtAu或AuGeNiAu。
10.如权利要求1所述的片上可调谐多模干涉反射镜,其中,所述片上可调谐多模干涉反射镜的工作波长覆盖深紫外到中远红外波段。
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