CN108168484A - Measuring method - Google Patents
Measuring method Download PDFInfo
- Publication number
- CN108168484A CN108168484A CN201611113180.XA CN201611113180A CN108168484A CN 108168484 A CN108168484 A CN 108168484A CN 201611113180 A CN201611113180 A CN 201611113180A CN 108168484 A CN108168484 A CN 108168484A
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- China
- Prior art keywords
- thickness
- material layer
- processed product
- measuring method
- face
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/30—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Present invention is disclosed a kind of measuring methods.Measuring method provided by the invention, including providing processed product, the processed product has opposite the first face and the second face；Measure the original depth d1 of the processed product；First material layer is formed on first face, while unnecessary material layer can be formed on second face, the thickness of the unnecessary material layer is less than 0.3 μm；Measure the thickness d 2 of the first material layer；Measure the final thickness d3 of the processed product；Calculate the thickness deltat d=d3 d2 d1 of the unnecessary material layer.As a result, compared with prior art, the thickness of unnecessary material layer that the measurement that can reach simple and quick is formed, optimizes measurement process, saves time, man power and material, helps efficiently to produce.
Description
Technical field
The present invention relates to semiconductor technology technology field, more particularly to a kind of measuring method.
Background technology
Such as in semiconductor machining production process, photoetching process is to restrict a key factor of product quality, energy
The no accurate photoetching of progress, it is most important.
However, the uniformity of silicon wafer thickness can directly influence photoetching process.
As shown in Figure 1, it will usually need to form one layer of epitaxial layer on 1 front of silicon chip, this process can be by silicon chip 1
It places on the base 2.However, silicon chip 1 often slides, so as to tilt.Then, the reaction gas of grown epitaxial layer can
To invade 1 lower section of silicon chip at the gap 3 being staggered, and then subsidiary one layer of unnecessary epitaxial layer 4 is formed at 1 back side of silicon chip, and this
Layer epitaxial layer 4 is substantially non-uniform, and thus photoetching process can be had an impact.
In addition, also it can also cause there is unnecessary epitaxial layer in uneven thickness on silicon chip there is other forms.It is such as right
There is a thin layer oxidation film on silicon chip after grinding, usual surface, when carrying out hydrogen treat to one side, often in another side shape
Into some pin holes, so as to generate epitaxial growth in pin hole, this can also influence the uniformity of silicon wafer thickness.
But usually the thickness of these unwanted unnecessary epitaxial layers is again very thin, it is difficult to directly detect its specific thickness.
At present, a variety of methods are had existed to be detected.Such as the United States Patent (USP) of Publication No. US8409349B2 discloses
A kind of following method：
The 1st, one silicon chip is provided；
2nd, auxiliary layer is formed on silicon chip back side；
3rd, the thickness of auxiliary layer is measured；
4th, epitaxial growth is carried out on front side of silicon wafer, subsidiary unnecessary epitaxial layer can be formed on auxiliary layer at this time；
5th, the thickness of auxiliary layer is measured again；
6th, the thickness of unnecessary epitaxial layer that the thickness difference measured twice is as incidentally formed.
But this process is cumbersome, needs to form special auxiliary layer, cost is higher.
In view of this, current a kind of new measuring method in need, to improve the shortcomings that above-mentioned.
Invention content
The purpose of the present invention is to provide a kind of measuring method, the thickness of film layer that measurement that can be simple and quick is incidentally formed
Degree.
In order to solve the above technical problems, a kind of measuring method of offer of the present invention, including：
Processed product is provided, the processed product has opposite the first face and the second face；
Measure the original depth d1 of the processed product；
First material layer is formed on first face, while unnecessary material layer can be formed on second face, it is described
The thickness of unnecessary material layer is less than 0.3 μm；
Measure the thickness d 2 of the first material layer；
Measure the final thickness d3 of the processed product；
Calculate the thickness deltat d=d3-d2-d1 of the unnecessary material layer.
Optionally, for the measuring method, the original depth and institute are obtained using two-sided flatness detection method
State final thickness.
Optionally, for the measuring method, the thickness of the first material layer is obtained using FTIR.
Optionally, for the measuring method, multiple points is selected to carry out each thickness on the processed product
It measures.
Optionally, for the measuring method, it is 13 to select points, and arrangement is in cross.
Optionally, for the measuring method, the spacing between consecutive points is identical.
Optionally, for the measuring method, the processed product is silicon chip.
Optionally, for the measuring method, the first material layer is epitaxial layer.
Measuring method provided by the invention, including providing processed product, the processed product has opposite first
Face and the second face；Measure the original depth d1 of the processed product；First material layer is formed on first face, meeting simultaneously
Unnecessary material layer is formed on second face, the thickness of the unnecessary material layer is less than 0.3 μm；Measure the first material layer
Thickness d 2；Measure the final thickness d3 of the processed product；Calculate the thickness deltat d=d3-d2- of the unnecessary material layer
d1.As a result, compared with prior art, the thickness of unnecessary material layer that the measurement that can reach simple and quick is formed, it is significantly excellent
Measurement process is changed, has saved time, man power and material, helped efficiently to produce.
Description of the drawings
Fig. 1 is a kind of schematic diagram when silicon chip forms epitaxial layer；
Fig. 2 is the flow chart of measuring method in one embodiment of the invention；
Fig. 3 is the schematic diagram that processed product is provided in one embodiment of the invention；
Fig. 4 is the position view for the original depth that the processed product is measured in one embodiment of the invention；
Fig. 5 is schematic diagram when first material layer is formed in one embodiment of the invention；
Fig. 6 is the schematic diagram for the thickness that the first material layer is measured in one embodiment of the invention；
Fig. 7-Fig. 8 is the schematic diagram for the final thickness that the processed product is measured in one embodiment of the invention.
Specific embodiment
The measuring method of the present invention is described in more detail below in conjunction with schematic diagram, which show the present invention's
Preferred embodiment, it should be appreciated that those skilled in the art can change invention described herein, and still realize the present invention's
Advantageous effects.Therefore, description below should be understood as the widely known of those skilled in the art, and be not intended as to this
The limitation of invention.
The present invention is more specifically described by way of example with reference to attached drawing in the following passage.It will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Referring to Fig.2, Fig. 2 is the flow chart of measuring method provided by the invention, measuring method of the present invention includes the following steps：
Step S11, provides processed product, and the processed product has opposite the first face and the second face；
Step S12 measures the original depth d1 of the processed product；
Step S13 forms first material layer on first face, while can form unnecessary material on second face
Layer, the thickness of the unnecessary material layer are less than 0.3 μm；
Step S14 measures the thickness d 2 of the first material layer；
Step S15 measures the final thickness d3 of the processed product；
Step S16 calculates the thickness deltat d=d3-d2-d1 of the unnecessary material layer.
In order to more specifically illustrate the measuring method of Fig. 2, please refer to Fig. 3-Fig. 8 and be described in detail.
As shown in figure 3, performing step S11, processed product 10 is provided, the processed product 10 has opposite first
Face and the second face；In embodiments of the present invention, the generation converted products 10 can be silicon chip, the e.g. wafer after polishing.When
So or other wafers or even or other products, such as glass substrate, metal material etc..
Please continue to refer to Fig. 3, step S12 is performed, measures the original depth d1 of the processed product 10；Incorporated by reference to Fig. 4,
In order to obtain preferable measurement effect, multimetering can be carried out to the processed product 10.In an embodiment of the present invention,
It is 13 to select points, specifically, such as the distribution mode in Fig. 4, this 13 point arrangements are in cross, you can be distributed across XOY
In coordinate system, and the spacing between consecutive points is identical, for example, the spacing can be 30mm-50mm.Specific points and be spaced with
And depending on arrangement mode can be by actual demand, such as it can also be arrangement in " rice " font etc..Appropriate points may insure
The accuracy of thickness measure, and avoid time of measuring long simultaneously.It is relatively thin in view of follow-up unnecessary material layer, in order to enable finally
As a result more precisely, the original depth d1 is obtained using two-sided flatness detection method.
Fig. 5 is please referred to, performs step S13, first material layer 11 is formed on first face, while can be described second
Unnecessary material layer 12 is formed on face, the thickness of the unnecessary material layer 12 is less than 0.3 μm；With production to be processed in the embodiment of the present invention
Product 10 be silicon chip for, the first material layer 11 can be epitaxial layer, can be obtained by epitaxial growth, for example, play thickness can
To be 1 μm -50 μm etc..In Fig. 5, the formation of unnecessary material layer 12 can cause processed product 10 to become in uneven thickness.And
And it due to the thinner thickness of unnecessary material layer 12, is not easy to be measured.
Fig. 6 is please referred to, performs step S14, measures the thickness d 2 of the first material layer 11；The thickness of the first material layer
Degree d2 can pass through FTIR (Fourier Transform Infrared Spectroscopy, Fourier transform infrared spectrum
Analyzer) it obtains.Further, by taking the embodiment of the present invention selects 13 points as an example, the measurement of this step is still before
13 positions measure.
Fig. 7-Fig. 8 is please referred to, performs step S15, measures the final thickness d3 of the processed product 10；In the present embodiment
The final thickness d3 is equally obtained using two-sided flatness detection method.As shown in figure 8, two-sided flatness detection device 20 is logical
The final shape that interference obtains the processed product 10 is crossed, so as to further obtain final thickness d3.Further, with this hair
For bright embodiment selects 13 points, the measurement of this step is still measured in 13 positions before.Pass through this
One step can accurately obtain specific thickness data.
It is understood that the sequence of S14 and step S15 can exchange in above-mentioned steps.
Finally, step S16 is performed, calculates the thickness deltat d=d3-d2-d1 of the unnecessary material layer.
It being verified by actual experiment, the thickness deltat d for the unnecessary material layer that the above method of the invention obtains is accurately effective,
After being handled on the basis of the data of acquisition, the precision of photoetching process can be effectively improved.
In conclusion measuring method provided by the invention, including providing processed product, the processed product has phase
To the first face and the second face；Measure the original depth d1 of the processed product；The first material is formed on first face
Layer, while unnecessary material layer can be formed on second face, the thickness of the unnecessary material layer is less than 0.3 μm；Described in measurement
The thickness d 2 of first material layer；Measure the final thickness d3 of the processed product；Calculate the thickness deltat d of the unnecessary material layer
=d3-d2-d1.As a result, compared with prior art, the thickness of unnecessary material layer that the measurement that can reach simple and quick is formed
Degree, greatly optimizes measurement process, saves time, man power and material, help efficiently to produce.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (8)
1. a kind of measuring method, including：
Processed product is provided, the processed product has opposite the first face and the second face；
Measure the original depth d1 of the processed product；
First material layer is formed on first face, while unnecessary material layer can be formed on second face, it is described unnecessary
The thickness of material layer is less than 0.3 μm；
Measure the thickness d 2 of the first material layer；
Measure the final thickness d3 of the processed product；
Calculate the thickness deltat d=d3-d2-d1 of the unnecessary material layer.
2. measuring method as described in claim 1, which is characterized in that obtained using two-sided flatness detection method described initial
Thickness and the final thickness.
3. measuring method as described in claim 1, which is characterized in that the thickness of the first material layer is obtained using FTIR.
4. measuring method as described in claim 1, which is characterized in that multiple points is selected to carry out on the processed product every
The measurement of secondary thickness.
5. measuring method as claimed in claim 4, which is characterized in that it is 13 to select points, and arrangement is in cross.
6. measuring method as claimed in claim 4, which is characterized in that the spacing between consecutive points is identical.
7. measuring method as described in claim 1, which is characterized in that the processed product is silicon chip.
8. measuring method as claimed in claim 7, which is characterized in that the first material layer is epitaxial layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611113180.XA CN108168484A (en) | 2016-12-07 | 2016-12-07 | Measuring method |
| TW106120252A TW201822289A (en) | 2016-12-07 | 2017-06-16 | Method of thickness measurement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611113180.XA CN108168484A (en) | 2016-12-07 | 2016-12-07 | Measuring method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108168484A true CN108168484A (en) | 2018-06-15 |
Family
ID=62526235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611113180.XA Pending CN108168484A (en) | 2016-12-07 | 2016-12-07 | Measuring method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108168484A (en) |
| TW (1) | TW201822289A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170008A (en) * | 1988-12-23 | 1990-06-29 | Sumitomo Electric Ind Ltd | Measuring method for film thickness of semiconductor multilayered thin film of heterojunction thin film multilayered structure |
| US6010914A (en) * | 1996-10-28 | 2000-01-04 | Nec Corporation | Method for manufacturing a semiconductor device |
| EP1739056A2 (en) * | 2005-06-29 | 2007-01-03 | Honeywell International, Inc. | Systems and methods for direct silicon epitaxy thickness measuring |
| US20090305021A1 (en) * | 2008-06-10 | 2009-12-10 | Sumco Corporation | Film thickness measurement method, epitaxial wafer production process and epitaxial wafer |
| CN102005401A (en) * | 2010-09-10 | 2011-04-06 | 上海宏力半导体制造有限公司 | Epitaxial film thickness measurement method |
| CN102683195A (en) * | 2011-03-11 | 2012-09-19 | 索尼公司 | Semiconductor manufacturing apparatus, method of manufacturing semiconductor device, and method of manufacturing electronic device |
| CN105378894A (en) * | 2013-06-10 | 2016-03-02 | 胜高股份有限公司 | Method for manufacturing epitaxial wafer |
-
2016
- 2016-12-07 CN CN201611113180.XA patent/CN108168484A/en active Pending
-
2017
- 2017-06-16 TW TW106120252A patent/TW201822289A/en unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170008A (en) * | 1988-12-23 | 1990-06-29 | Sumitomo Electric Ind Ltd | Measuring method for film thickness of semiconductor multilayered thin film of heterojunction thin film multilayered structure |
| US6010914A (en) * | 1996-10-28 | 2000-01-04 | Nec Corporation | Method for manufacturing a semiconductor device |
| EP1739056A2 (en) * | 2005-06-29 | 2007-01-03 | Honeywell International, Inc. | Systems and methods for direct silicon epitaxy thickness measuring |
| US20090305021A1 (en) * | 2008-06-10 | 2009-12-10 | Sumco Corporation | Film thickness measurement method, epitaxial wafer production process and epitaxial wafer |
| CN102005401A (en) * | 2010-09-10 | 2011-04-06 | 上海宏力半导体制造有限公司 | Epitaxial film thickness measurement method |
| CN102683195A (en) * | 2011-03-11 | 2012-09-19 | 索尼公司 | Semiconductor manufacturing apparatus, method of manufacturing semiconductor device, and method of manufacturing electronic device |
| CN105378894A (en) * | 2013-06-10 | 2016-03-02 | 胜高股份有限公司 | Method for manufacturing epitaxial wafer |
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| Publication number | Publication date |
|---|---|
| TW201822289A (en) | 2018-06-16 |
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Application publication date: 20180615 |