CN108155272A - Quantum dot LED component and its packaging method, backlight lamp bar and backlight module - Google Patents
Quantum dot LED component and its packaging method, backlight lamp bar and backlight module Download PDFInfo
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- CN108155272A CN108155272A CN201711259819.XA CN201711259819A CN108155272A CN 108155272 A CN108155272 A CN 108155272A CN 201711259819 A CN201711259819 A CN 201711259819A CN 108155272 A CN108155272 A CN 108155272A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The invention discloses a kind of packaging method of quantum dot LED component, including：(1) LED chip is pre-processed；(2) light transformational substance and solidification glue are mixed, then are coated onto on LED chip, cured formation luminescent layer；Wherein, at least one light transformational substance is quantum dot；The quantum dot is by the way that quantum dot particle to be embedded into high molecular polymer to be made, and the high molecular polymer is the polymer microballoon containing meso-hole structure.The present invention also provides one kind quantum dot LED component, backlight lamp bar and backlight modules as made from above-mentioned packaging method.The present invention can directly mix quantum dot with solidification glue without organic solvent, simplify process, avoid pollution of the organic solvent to environment, solves outside heat and quantum dot stimulated luminescence process itself generates influence of the heat to quantum dot, improve device reliability.
Description
Technical field
The present invention relates to LED backlight field, more particularly to a kind of packaging method of quantum dot LED component, using above-mentioned envelope
The quantum dot LED component and the backlight lamp bar and backlight module using above-mentioned quantum dot LED component that dress method obtains.
Background technology
Quantum dot (being abbreviated as QD) has many advantages, such as continuous controllable, the luminous efficiency height of launch wavelength and half-wave width, because
This has broad application prospects in high colour gamut backlight display field.Current quantum dot displays are based primarily upon Q-LCD and Q-LCF
Technology.Q-LCD uses side entrance back form, with reference to blue-ray LED, is assembled into novel white-light back light.Q-LCD is typically sealed
Dress form is glass tube+quantum dot glue, and quantum dot glue includes red QD and green QD.Q-LCF is patching, by quantum
It puts and is packaged into sandwich structure, wherein upper and lower two layers is PET class films.Q-LCF is also matched with blue-ray LED, is placed on and is led
Above tabula rasa (or diffuser plate in straight-down negative).The appearance of Q-LCD and Q-LCF technologies is based primarily upon and ensures examining for QD reliabilities
Consider, but there are many QD materials in two kinds of forms, and it is expensive therefore of high cost to obstruct tunic.Two kinds of forms relatively above, On-Chip
For type quantum dot LED directly by quantum dot light emitting material package in device stent, materials are minimum and the system integration is easiest to, and are
A kind of ideal packing forms.However, the stability of quantum dot is heated, steam and oxygen influence are very big, therefore On-
Chip type quantum dots LED not only needs quantum dot itself to have high stability, and needs to carry out the packaging protection of high request.
The quanta point material reported at present matches the form of glue during LED is prepared using organic solvent, needs elder generation
Quanta point material is scattered in the toxic organic solvents such as toluene or chloroform, then is removed in vacuo after being stirred with packaging plastic organic
Solvent, last dispensing carry out heat cure, and preparation process process is more and not environmentally.
In addition, for quantum dot is avoided to be contacted with chip to reduce influence of the heat to quantum dot, On-Chip type quantum dots
What the encapsulating structure of LED was reported has the insulation packages forms such as air insulated, silica-gel lens isolation, silica gel packaging isolation, but can
Promotion by property is not obvious.
In the encapsulating structure of existing On-Chip types quantum dot LED, although being intended to send out quantum dot by air or layer of silica gel
Photosphere and chip are kept apart, but the improvement of reliability is not obvious.Reason of both mainly having, when air or layer of silica gel
Heat-proof quality does not meet insulation requirement, second is that the heat transfer mode of LED is mainly heat transfer and thermal convection current, heat dissipation path is from device
Toward bottom metal substrate at the top of part.Since quantum dot light-light conversion efficiency is low, relative fluorescence powder, QD during light emitting from
Body can generate more heats.After adding separation layer, luminescent layer and frame bottom metal substrate are contactless, and heat dissipation path is hindered
Every the heat that QD luminescent layers generate can not be evacuated quickly, and heat is caused to gather.
As shown in Figure 1, documents 1 are the Chinese patents of Publication No. CN106653985A, it discloses a kind of multilayers
The quantum dot LED structure of encapsulation, the LED chip 2 including carrier 1 and on carrier 1.It is covered with packaging plastic successively on LED chip 2
Layer 4, fluorescent powder glue-line 5, quantum dot glue-line 6 and barrier water oxygen layer.It is by anti-vulcanizing agent, silicon rubber, silicones to encapsulate glue-line 4
One or more materials be made.The barrier that barrier water oxygen layer includes barrier water oxygen film 7 and is covered on barrier water oxygen film
Water oxygen glue-line 8.Fluorescent powder glue-line 5 is that fluorescent powder is scattered in transparent colloid and obtains.Quantum dot glue-line 6 is quantum dot microsphere point
Dissipate what is obtained in transparent colloid, the transparent colloid is silica gel, polymethyl methacrylate, makrolon or polystyrene
It is one or more.
Fluorescent powder and quantum dot are divided into two layers by documents 1, and fluorescent powder and quantum dot are kept apart, can be effectively reduced
Quantum dot and absorption of the fluorescent powder to each spontaneous emission light；One layer of encapsulation glue-line is filled between LED chip and fluorescent powder glue-line, it can
It is absorbed with reducing the exciting light scattered to the direction of LED chip by LED chip, then improves the luminous efficiency of LED.But it seals
Dress glue-line is completely covered by LED chip and carrier so that the bottom of fluorescent powder glue-line and carrier is contactless, leads to heat dissipation effect
It is bad.
Invention content
The technical problems to be solved by the invention are, a kind of packaging method of quantum dot LED component are provided, without organic
Solvent can directly mix quantum dot with solidification glue, simplifies process, avoids pollution of the organic solvent to environment.
The technical problems to be solved by the invention also reside in, and provide a kind of packaging method of quantum dot LED component, solve outer
Portion's heat and quantum dot stimulated luminescence process itself generate influence of the heat to quantum dot, improve device reliability.
The technical problems to be solved by the invention also reside in, and provide a kind of using quantum dot made from above-mentioned packaging method
LED component, the quantum dot LED component heat-sinking capability is good, highly reliable.
The technical problems to be solved by the invention also reside in, and provide a kind of backlight for including above-mentioned quantum dot LED component
The good reliability of item and backlight module, the backlight lamp bar and backlight module, colour gamut are wide.
To reach above-mentioned technique effect, the present invention provides a kind of packaging method of quantum dot LED component, including：
(1) LED chip is pre-processed；
(2) light transformational substance and solidification glue are mixed, then are coated onto on LED chip, cured formed shines
Layer；
Wherein, at least one light transformational substance is quantum dot；
The quantum dot is the high molecular polymerization by the way that quantum dot particle to be embedded into high molecular polymer to be made
Object is the polymer microballoon containing meso-hole structure.
As the improvement of said program, the smooth transformational substance includes red light transformational substance and green light transformational substance,
At least one of the red light transformational substance, green light transformational substance are quantum dot.
As the improvement of said program, the LED chip is blue chip.
As the improvement of said program, the green light transformational substance be quantum dot, wavelength 520nm-540nm, partly
Wave width is≤30nm, and the red light transformational substance is quantum dot, wavelength 630nm-660nm, half-wave is wide≤30nm；
Alternatively, the red light transformational substance is red common phosphors, wavelength 630nm-660nm, half-wave width is
≤30nm；And the green light transformational substance is quantum dot, wavelength 520nm-540nm, half-wave width is≤30nm；
Alternatively, the red light transformational substance is quantum dot, and wavelength 630nm-660nm, half-wave is wide≤30nm, and institute
It is green common phosphors to state green light transformational substance, and wavelength 520nm-540nm, half-wave width is 20nm-50nm.
As the improvement of said program, the red common phosphors are fluorination matter fluorescent powder, and green common phosphors are
Nitride phosphor.
As the improvement of said program, the quantum dot is made by following methods：
Its meso-hole structure is expanded by way of physically or chemically high molecular polymer；
Quantum dot particle is embedded into the meso-hole structure of high molecular polymer；
Meso-hole structure contraction is made to become smaller by way of physically or chemically, then through being dried, obtains quantum dot.
As the improvement of said program, the quantum dot is made by following methods：
Under stirring, high molecular polymer, solvent and quantum dot solution are added in, obtains mixed solution；
It is passed through argon gas and removes air, mixed solution is heated to 55 DEG C -65 DEG C, so that quantum dot particle is embedded into macromolecule
In the meso-hole structure of polymer；
Solvent is evaporated, so that quantum dot particle gos deep into the meso-hole structure of high molecular polymer and the meso-hole structure is shunk
Become smaller, obtain mixture；
Processing is dried to the mixture after evaporation solvent, obtains quantum dot.
As the improvement of said program, the high molecular polymer is high light transmission, containing mesopore structure, simultaneous with quantum dot chemistry
The high polymer material of capacitive；
The solvent is hexane solvent.
As the improvement of said program, the polymer material uses mesoporous silicon oxide microballoons, a diameter of (30- of microballoon
60) um, the average pore size on microballoon are (5-10) nm.
As the improvement of said program, the quantum dot is made by following methods：
After high molecular polymer swelling solvent swell, quantum dot solution is added in, ultrasonic disperse is embedded in quantum dot particle
Into the meso-hole structure of high molecular polymer, mixed solution is obtained；
The mixed solution is placed into preset time, then is centrifuged, with detergent wash up to upper solution without
Then color is dried in vacuo, obtain quantum dot.
As the improvement of said program, the high molecular polymer is high light transmission, containing mesopore structure, simultaneous with quantum dot chemistry
The high polymer material of capacitive；
The sweller is chloroform and the mixed solvent or chloroform of propyl alcohol and the mixed solvent of butanol；
The preset time that the mixed solution is placed is 12-36 hour；
The detergent is ethyl alcohol.
As the improvement of said program, the polymer material uses mesoporous polystyrene microsphere.
As the improvement of said program, between the step (1) and step (2), further include：
The spot printing heat-barrier material on LED chip forms light transmission thermal insulation layer, to complete the full cladding of LED chip light-emitting surface.
As the improvement of said program, the heat-barrier material is Perhydropolysilazane, the poly- silicon nitrogen of spot printing perhydro on LED chip
Alkane is heating and curing to form silicon oxynitride.
As the improvement of said program, the temperature being heating and curing is 100 DEG C -200 DEG C.
As the improvement of said program, the LED chip bottom is equipped with LED support, and the light transmission thermal insulation layer is coated on LED
On the outer surface of chip, and the luminescent layer is contacted with LED support bottom part.
As the improvement of said program, the mode of the cure package of the quantum dot LED component is UV curings, IR curings or
Heat cure, the solidification glue are UV solidification glues, IR solidification glues or heat-curable glue.
As the improvement of said program, further included after step (2)：
Transparent protective layer is equipped in the top of luminescent layer.
As the improvement of said program, the transparent protective layer is transparent silicon glue-line.
Correspondingly, invention additionally discloses a kind of quantum dot LED component, it is described including LED support, LED chip and luminescent layer
Quantum dot LED component is made by above-mentioned packaging method.
Correspondingly, invention additionally discloses a kind of backlight lamp bar, including using at least one above-mentioned quantum dot LED component.
Correspondingly, invention additionally discloses a kind of backlight module, including at least one above-mentioned backlight lamp bar.
Implement the present invention to have the advantages that：
The present invention introduces quantum dot as light transformational substance, quantum dot part substitution or complete in the encapsulation field of LED component
Portion replaces common fluorescent powder, and luminescent layer is formed after being mixed with solidification glue.Wherein, the smooth transformational substance is by by quantum dot
Grain is embedded into the high molecular polymer microballoon containing meso-hole structure and is made.Quantum dot is deep into meso-hole structure, and structure is steady
It is fixed, and due to the protection for having peripheral polymeric layer, heat defense and chemical stability are promoted, good dispersion soilless sticking,
Therefore it can directly be mixed as fluorescent powder with solidification glue, not need to organic solvent, simplified process, avoid organic solvent to ring
The pollution in border.
The present invention uses SiON as heat-barrier material, can not only play good heat insulation, but also with good translucency.
Moreover, the light transmission thermal insulation layer is coated on the outer surface of LED chip, and luminescent layer is contacted with LED support part, and light transmission is heat-insulated
The area ratio that layer occupies LED support is smaller, and luminescent layer still has larger proportion contact area with frame bottom.Therefore, the knot
Structure design not only can be with isolating chip and quantum dot light emitting layer to reduce destruction of the chip temperature to quantum dot, but also can enhance luminescent layer
Heat evacuation capacity.
The present invention is also equipped with transparent protective layer in the top of luminescent layer, enhances the air-tightness of device, prevents water oxygen to quantum
The corrosion of point luminescent layer further improves the reliability of device.
Description of the drawings
Fig. 1 is the schematic diagram of existing quantum dot LED structure；
Fig. 2 is the Principle of Process schematic diagram that quantum dot particle of the present invention is embedded into high molecular polymer microballoon；
Fig. 3 is that the SEM of quantum dot of the present invention-mesoporous polymer polymer microballoon schemes；
Fig. 4 is a kind of structure diagram of quantum dot LED component of the present invention；
Fig. 5 is a kind of spectrogram of quantum dot LED component of the present invention；
Fig. 6 is a kind of gamut map of quantum dot LED component of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention will be made below further detailed
Description.
The quanta point material reported at present matches the form of glue during LED is prepared using organic solvent, prepares
More than journey process and not environmentally, moreover, quanta point material itself can generate larger heat during light emitting, if heat can not
It is quickly evacuated, heat is caused to gather, influence the reliability of LED component.
For this purpose, the present invention provides a kind of packaging method of quantum dot LED component, the quantum dot LED component is specially
On-Chip type quantum dot LED components, including：
(1) LED chip is pre-processed, the pretreatment includes empty stent Ion Cleaning, is heated at high temperature and is consolidated
Brilliant, wire bonding process, complete the making (being commonly called as semi-finished product) of blue-ray LED.
(2) light transformational substance and solidification glue are mixed, then are coated onto on LED chip, cured formed shines
Layer；
Wherein, at least one light transformational substance is quantum dot；
The quantum dot is the high molecular polymerization by the way that quantum dot particle to be embedded into high molecular polymer to be made
Object is the polymer microballoon containing meso-hole structure.
The present invention introduces quantum dot in the encapsulation field of LED component, and quantum dot part replaces or all replaces commonly glimmering
Light powder forms luminescent layer after being mixed with solidification glue.
Specifically, the smooth transformational substance includes red light transformational substance and green light transformational substance, the red light turns
At least one of substance, green light transformational substance are changed as quantum dot.The LED chip is preferably blue chip.Red fluorescence
Powder, green emitting phosphor and blue chip match, and generate white light, meet the needs of daily a variety of occasions are for LED illumination.
It should be noted that when above-mentioned LED component is applied to other occasions, it, can when needing to generate the light of other colors
To be combined using different LED chips and using the light transformational substance of different colours, embodiments thereof is not limited to this hair
Bright illustrated embodiment.
The red light transformational substance of the present invention can be common phosphors or quantum dot.And green light conversion object
Matter can be common phosphors or quantum dot.There are many combination passes for red light transformational substance and green light transformational substance
System, currently preferred syntagmatic are as follows：
1st, the green light transformational substance is quantum dot, wavelength 520nm-540nm, and half-wave width is≤30nm, and institute
Red light transformational substance is stated as quantum dot, wavelength 630nm-660nm, half-wave is wide≤30nm.
2nd, the red light transformational substance is red common phosphors, wavelength 630nm-660nm, half-wave width is≤
30nm；And the green light transformational substance is quantum dot, wavelength 520nm-540nm, half-wave width is≤30nm.
3rd, the red light transformational substance is quantum dot, wavelength 630nm-660nm, half-wave is wide≤30nm, and it is described
Green light transformational substance is green common phosphors, and wavelength 520nm-540nm, half-wave width is 20nm-50nm.
When red light transformational substance and green light transformational substance use the 1st kind of syntagmatic, effect is optimal.
The specific substance of common phosphors is selected, the red common phosphors are preferably fluorinated matter fluorescent powder, green
Color common phosphors are preferably nitride phosphor, and illumination effect is best at this time.The red common phosphors can also be nitrogen
Compound fluorescent powder, sulphide fluorescent material etc., green common phosphors can also be silicate fluorescent powder etc., and embodiments thereof is not
It is confined to illustrated embodiment of the present invention.
Further, the quantum dot is made by following methods：
1st, expand high molecular polymer by way of physically or chemically its meso-hole structure, the mode of the physics can be with
It is heating, the mode of the chemistry can add in sweller, but not limited to this；
2nd, quantum dot particle is embedded into the meso-hole structure of high molecular polymer；
3rd, meso-hole structure contraction is made to become smaller by way of physically or chemically, then through being dried, obtains quantum dot, the object
The mode of reason can be evaporation, and the mode of the chemistry can be centrifugation, but not limited to this.
Quantum dot is further elaborated with reference to specific preparation method, the preparation method of the quantum dot has more
Kind, generally comprise Physical and chemical method.Specifically,
(1) quantum dot is prepared by Physical, the preparation method includes：
1st, under stirring, high molecular polymer, solvent and quantum dot solution is added in, obtains mixed solution.
Wherein, the high molecular polymer is high light transmission, containing mesopore structure and the high polymer of quantum dot chemical compatibility
Material, preferably mesoporous silicon oxide microballoons, a diameter of (30-60) um of microballoon, the average pore size on microballoon are (5-10) nm, institute
Stating high molecular polymer can buy from market.
The solvent is preferably hexane solvent, but not limited to this.
The mixed proportion of high molecular polymer, solvent and quantum dot solution is：
Silica：Hexane solvent：Quantum dot solution=0.1g：10ml：4ml.
2nd, it is passed through argon gas and removes air, mixed solution is heated to 55 DEG C -65 DEG C, so that quantum dot particle is embedded into high score
In the meso-hole structure of sub- polymer.
Mixed solution is preferably heated to 60 DEG C, and under temperature action, microsphere expansion, aperture sizes become larger, quantum dot particle
It enters in the meso-hole structure.
3rd, solvent is evaporated, so that quantum dot particle gos deep into the meso-hole structure of high molecular polymer and the meso-hole structure is received
Contracting becomes smaller, and obtains mixture, in this way, quantum dot particle is just tightly embedded in the meso-hole structure of microballoon.
4th, processing is dried to the mixture after evaporation solvent, obtains quantum dot.
It should be noted that during Physical prepares quantum dot, prepare based on physics swelling and evaporation of the solvent
Method, wherein, the specific substance selection of high molecular polymer, solvent can also be other embodiments, and the present invention only gives
Preferred embodiment is gone out.
(2) quantum dot is prepared by chemical method, the preparation method includes：
1st, by after high molecular polymer swelling solvent swell, quantum dot solution is added in, ultrasonic disperse makes particle be embedded into height
In the meso-hole structure of Molecularly Imprinted Polymer, mixed solution is obtained；
The high molecular polymer for high light transmission, containing mesopore structure, with the high polymer material of quantum dot chemical compatibility,
Preferably mesoporous polystyrene microsphere, a diameter of 1um-5um of microballoon, the average pore size on microballoon are 1nm-10nm, the height
Molecularly Imprinted Polymer can be bought from market.
The sweller is preferably the mixed solvent of chloroform and propyl alcohol or the mixed solvent of chloroform and butanol, is mixed
Ratio is：
Chloroform：Propyl alcohol/butanol=5%：95%/95%.
The amount ratio of high molecular polymer, sweller and quantum dot solution is：
Polystyrene：Sweller：Quantum dot solution=0.18g：10ml：4ml.
The above size and changed than regular meeting according to practical conditions of demand, it is only for reference.
2nd, the mixed solution is placed into preset time, after its swelling equilibrium, then is centrifuged, washed with detergent
Wash until upper solution it is colourless, be then dried in vacuo, obtain quantum dot.
The preset time that the mixed solution is placed is 12-36 hour, is preferably for 24 hours；
The detergent is preferably ethyl alcohol, and extraction efficiency is high.
It is to prepare the method based on swelling and washing it should be noted that during chemical method prepares quantum dot,
In, the specific substance selection of high molecular polymer, sweller, detergent can also be other embodiments, the present invention is only
Give preferred embodiment.
As shown in Fig. 2, Fig. 2 shows that quantum dot particle is embedded into the high molecular polymer microballoon containing meso-hole structure
Process, the high molecular polymer microballoon containing meso-hole structure are swollen under the action of physically or chemically, and then quantum dot enters Jie
In pore structure, quantum dot-mesoporous polymer polymer microballoon is reduced into finally by evaporation.As shown in figure 3, Fig. 3 be quantum dot-
The SEM figures of mesoporous polymer polymer microballoon.
The present invention introduces quantum dot in the encapsulation field of LED component, and quantum dot part replaces or all replaces commonly glimmering
Light powder forms luminescent layer after being mixed with solidification glue.Wherein, the quantum dot is by being embedded into quantum dot particle containing mesoporous knot
It is made in the high molecular polymer microballoon of structure.Quantum dot is deep into meso-hole structure, stable structure, and due to there is peripheral polymerization
The protection of nitride layer, heat is defensive and chemical stability is promoted, good dispersion soilless sticking, therefore can be as fluorescent powder
It is directly mixed with solidification glue, does not need to organic solvent, simplified process, avoid pollution of the organic solvent to environment.
The present invention is using quantum dot, and since quantum dot light-light conversion efficiency is low, with respect to common phosphors, quantum powder is in light
Itself can generate more heats in emission process.
For this purpose, the present invention also sets up following step between step (1) and step (2)：
The spot printing heat-barrier material on LED chip forms light transmission thermal insulation layer, to complete the full cladding of LED chip light-emitting surface.
The heat-barrier material is preferably Perhydropolysilazane, and spot printing Perhydropolysilazane on LED chip is heating and curing to be formed
Silicon oxynitride.The temperature being heating and curing is preferably 100 DEG C -200 DEG C, but not limited to this.
Silicon oxynitride SiON, it is seen that more than 98% light transmittance in light region, poor thermal conductivity, compactness is high, and Morse hardness is high
Corrosion-resistant up to 9H, high temperature resistant is anti-oxidant, being heating and curing is transformed by Perhydropolysilazane (PHPS, inorganic polymer).
Therefore, which can be effectively isolated high temperature chip and luminescent layer, weaken the high temperature generated during chip operation and generate shadow to quantum dot
It rings.In addition, high rigidity characteristic can also the thermal expansion of some relaxation luminescent layer to the tensile stress of chip.
The LED chip bottom is equipped with LED support, and the light transmission thermal insulation layer is coated on the outer surface of LED chip, and institute
Luminescent layer is stated to contact with LED support bottom metal substrate portion, light transmission thermal insulation layer occupy the bottom area ratio of LED support compared with
Small, luminescent layer still has larger proportion contact area with frame bottom.Therefore, which both can be with isolating chip and quantum
Point luminescent layer can enhance the heat evacuation capacity of luminescent layer to reduce destruction of the chip temperature to quantum dot.
Luminescent layer has certain contact with the metal substrate of LED support bottom, can quickly transfer out the heat of luminescent layer
It goes, reduces influence of the heat accumulation to luminescent layer.
Further, the curing mode about the present invention, the mode of the cure package of the quantum dot LED component are consolidated for UV
Change, IR curings or heat cure, the solidification glue are UV solidification glues, IR solidification glues or heat-curable glue.
Preferably, the mode of the cure package of the quantum dot LED component cures for UV, and the solidification glue cures for UV
Glue, the main body of UV solidification glues is acrylic resin.With respect to the mode (general 8h activity times) of heat cure, the present invention uses UV
Curing can increase substantially production efficiency, in addition avoid heat damage of the furnace body temperature to quantum dot in curing process.
As the present invention more preferably embodiment, further included after step (2)：
Transparent protective layer is equipped in the top of luminescent layer.The transparent protective layer is preferably transparent silicon glue-line, can be enhanced
The air-tightness of device prevents erosion of the water oxygen to quantum dot light emitting layer.
Correspondingly, as shown in figure 4, invention additionally discloses a kind of quantum dot LED component, including LED support 1, LED chip 2,
Light transmission thermal insulation layer 3 and luminescent layer 4, the LED chip 2 are set on LED support 1, and the light transmission thermal insulation layer 3 is coated on LED chip 2
Outer surface, the top of the light transmission thermal insulation layer 3 is equipped with luminescent layer 4, and the luminescent layer 4 is contacted with 1 part of LED support.This hair
Bright quantum dot LED component is made by above-mentioned packaging method, can be solved the QD heats that itself is generated during light emitting, be carried
High device reliability.Moreover, the encapsulation process of quantum dot LED component avoids dirt of the organic solvent to environment without organic solvent
Dye.
The light transmission thermal insulation layer 3 is coated on the outer surface of LED chip 2, and the luminescent layer 4 connects with 1 part of LED support
It touches, the area ratio that light transmission thermal insulation layer 3 occupies LED support 1 is smaller, and luminescent layer 4 still has larger proportion to contact with 1 bottom of stent
Area.Therefore, the structure design both can with isolating chip and quantum dot light emitting layer to reduce destruction of the chip temperature to quantum dot,
The heat evacuation capacity of luminescent layer can be enhanced again.
Luminescent layer 4 has certain contact with the metal substrate of 1 bottom of LED support, can quickly conduct the heat of luminescent layer
It goes out, reduces influence of the heat accumulation to luminescent layer.
The light transmission thermal insulation layer 3 is silicon oxynitride layer.SiON is used as heat-barrier material, can both play good heat-insulated effect
Fruit, and with good translucency.
More preferably, the top of luminescent layer 4 is equipped with transparent protective layer 5.The transparent protective layer 5 is preferably transparent silicon glue-line,
The air-tightness of device can be enhanced, prevent erosion of the water oxygen to quantum dot light emitting layer.
Correspondingly, invention additionally discloses a kind of backlight lamp bar, including using above-mentioned at least one quantum dot LED component.
As backlight lamp bar one of which preferred embodiment, including above-mentioned at least one quantum dot LED component, optical lens
And pcb board, the quantum dot LED component are mounted on the pcb board, the optical lens is solidificated on the pcb board, and position
Above the quantum dot LED component.Wire connection terminal is provided with for being connect with external power supply on the further pcb board.
Correspondingly, invention additionally discloses a kind of backlight module, including above-mentioned at least one backlight lamp bar.As backlight mould
Group one of which preferred embodiment, including above-mentioned at least one backlight lamp bar, diffuser plate and diaphragm, the diffusion
Plate is placed in above the backlight lamp bar, and the diaphragm is placed on the diffuser plate.Specifically, the diaphragm can be at least
One prismatic lens and at least one diffusion sheet.The backlight module can be applicable to the equipment such as straight-down negative TV backlights or direct-illumination type panel lamp
In.
As shown in figure 5, which show the spectrogram of quantum dot LED component, by spectrogram it is found that the quantum dot LED devices
Part has good luminescent properties, suitable for the equipment such as straight-down negative TV backlights or direct-illumination type panel lamp.
As shown in fig. 6, which show the gamut map of quantum dot LED component, curve 1 is standard NTSC, and curve 2 is the present invention
Quantum dot LED component NTSC.It will be appreciated from fig. 6 that quantum dot LED component of the present invention as the area of standard, is 100%, it was demonstrated that
The colour gamut of quantum dot LED component of the present invention is wide.
It is had the advantages that in conclusion implementing the present invention：
The present invention introduces quantum dot in the encapsulation field of LED component, and quantum dot part replaces or all replaces commonly glimmering
Light powder forms luminescent layer after being mixed with solidification glue.Wherein, the smooth transformational substance is by being embedded into quantum dot particle containing Jie
It is made in the high molecular polymer microballoon of pore structure.Quantum dot is deep into meso-hole structure, stable structure, and due to there is periphery
The protection of polymeric layer, heat is defensive and chemical stability is promoted, good dispersion soilless sticking, therefore can be as fluorescent powder
It is generally directly mixed with solidification glue, does not need to organic solvent, simplified process, avoid pollution of the organic solvent to environment.
The present invention uses SiON as heat-barrier material, can not only play good heat insulation, but also with good translucency.
Moreover, the light transmission thermal insulation layer is coated on the outer surface of LED chip, and luminescent layer is contacted with LED support part, and light transmission is heat-insulated
The area ratio that layer occupies LED support is smaller, and luminescent layer still has larger proportion contact area with frame bottom.Therefore, the knot
Structure design not only can be with isolating chip and quantum dot light emitting layer to reduce destruction of the chip temperature to quantum dot, but also can enhance luminescent layer
Heat evacuation capacity.
The present invention is also equipped with transparent protective layer in the top of luminescent layer, enhances the air-tightness of device, prevents water oxygen to quantum
The corrosion of point luminescent layer further improves the reliability of device.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (22)
1. a kind of packaging method of quantum dot LED component, which is characterized in that including：
(1) LED chip is pre-processed；
(2) light transformational substance and solidification glue are mixed, then are coated onto on LED chip, cured formation luminescent layer；
Wherein, at least one light transformational substance is quantum dot；
The quantum dot is by the way that quantum dot particle to be embedded into high molecular polymer to be made, and the high molecular polymer is
Polymer microballoon containing meso-hole structure.
2. the packaging method of quantum dot LED component as described in claim 1, which is characterized in that the smooth transformational substance includes
At least one of red light transformational substance and green light transformational substance, the red light transformational substance, green light transformational substance
For quantum dot.
3. the packaging method of quantum dot LED component as claimed in claim 2, which is characterized in that the LED chip is blue light core
Piece.
4. the packaging method of quantum dot LED component as claimed in claim 2, which is characterized in that the green light transformational substance
For quantum dot, wavelength 520nm-540nm, half-wave width is≤30nm, and the red light transformational substance is quantum dot, wave
A length of 630nm-660nm, half-wave is wide≤30nm；
Alternatively, the red light transformational substance is red common phosphors, wavelength 630nm-660nm, half-wave width is≤
30nm；And the green light transformational substance is quantum dot, wavelength 520nm-540nm, half-wave width is≤30nm；
Alternatively, the red light transformational substance is quantum dot, and wavelength 630nm-660nm, half-wave is wide≤30nm, and it is described green
Coloured light transformational substance is green common phosphors, and wavelength 520nm-540nm, half-wave width is 20nm-50nm.
5. the packaging method of quantum dot LED component as claimed in claim 4, which is characterized in that the red common phosphors
To be fluorinated matter fluorescent powder, green common phosphors are nitride phosphor.
6. the packaging method of quantum dot LED component as claimed in claim 1 or 2, which is characterized in that the quantum dot is by following
Method is made：
Its meso-hole structure is expanded by way of physically or chemically high molecular polymer；
Quantum dot particle is embedded into the meso-hole structure of high molecular polymer；
Meso-hole structure contraction is made to become smaller by way of physically or chemically, then through being dried, obtains quantum dot.
7. the packaging method of quantum dot LED component as claimed in claim 6, which is characterized in that the quantum dot is by following sides
Method is made：
Under stirring, high molecular polymer, solvent and quantum dot solution are added in, obtains mixed solution；
It is passed through argon gas and removes air, mixed solution is heated to 55 DEG C -65 DEG C, so that quantum dot particle is embedded into high molecular polymerization
In the meso-hole structure of object；
Solvent is evaporated, so that quantum dot particle gos deep into the meso-hole structure of high molecular polymer and the meso-hole structure shrinks and becomes
It is small, obtain mixture；
Processing is dried to the mixture after evaporation solvent, obtains quantum dot.
8. the packaging method of quantum dot LED component as claimed in claim 7, which is characterized in that the high molecular polymer is
High light transmission, containing mesopore structure and the high polymer material of quantum dot chemical compatibility；
The solvent is hexane solvent.
9. the packaging method of quantum dot LED component as claimed in claim 8, which is characterized in that the polymer material uses
Mesoporous silicon oxide microballoons, a diameter of (30-60) um of microballoon, the average pore size on microballoon are (5-10) nm.
10. the packaging method of quantum dot LED component as claimed in claim 6, which is characterized in that the quantum dot is by following sides
Method is made：
After high molecular polymer swelling solvent swell, quantum dot solution is added in, ultrasonic disperse makes quantum dot particle be embedded into height
In the meso-hole structure of Molecularly Imprinted Polymer, mixed solution is obtained；
The mixed solution is placed into preset time, then centrifuged, is washed with detergent until upper solution is colourless, so
After be dried in vacuo, obtain quantum dot.
11. the packaging method of quantum dot LED component as claimed in claim 10, which is characterized in that the high molecular polymer
For high light transmission, containing mesopore structure and the high polymer material of quantum dot chemical compatibility；
The sweller is chloroform and the mixed solvent or chloroform of propyl alcohol and the mixed solvent of butanol；
The preset time that the mixed solution is placed is 12-36 hour；
The detergent is ethyl alcohol.
12. the packaging method of quantum dot LED component as claimed in claim 11, which is characterized in that the polymer material is adopted
With mesoporous polystyrene microsphere.
13. the packaging method of quantum dot LED component as described in claim 1, which is characterized in that the step (1) and step
(2) it between, further includes：
The spot printing heat-barrier material on LED chip forms light transmission thermal insulation layer, to complete the full cladding of LED chip light-emitting surface.
14. the packaging method of quantum dot LED component as claimed in claim 13, which is characterized in that the heat-barrier material is complete
Hydrogen polysilazane, spot printing Perhydropolysilazane on LED chip, is heating and curing to form silicon oxynitride.
15. the packaging method of quantum dot LED component as claimed in claim 14, which is characterized in that the temperature being heating and curing
Spend is 100 DEG C -200 DEG C.
16. the packaging method of quantum dot LED component as claimed in claim 13, which is characterized in that the LED chip bottom is set
There is LED support, the light transmission thermal insulation layer is coated on the outer surface of LED chip, and the luminescent layer and LED support bottom part
Contact.
17. the packaging method of quantum dot LED component as described in claim 1, which is characterized in that the quantum dot LED component
Cure package mode for UV curing, IR curing or heat cure, the solidification glue be UV solidification glues, IR solidification glues or heat cure
Glue.
18. the packaging method of quantum dot LED component as described in claim 1, which is characterized in that further included after step (2)：
Transparent protective layer is equipped in the top of luminescent layer.
19. the packaging method of quantum dot LED component as claimed in claim 18, which is characterized in that the transparent protective layer is
Transparent silicon glue-line.
A kind of 20. quantum dot LED component, including LED support, LED chip and luminescent layer, which is characterized in that the quantum dot LED
Device is made by claim 1-19 any one of them packaging methods.
21. a kind of backlight lamp bar, which is characterized in that including using the quantum dot LED component described at least one claim 20.
22. a kind of backlight module, which is characterized in that including the backlight lamp bar described at least one claim 21.
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