CN108155255B - 一种高透性薄膜太阳能电池柔性衬底 - Google Patents
一种高透性薄膜太阳能电池柔性衬底 Download PDFInfo
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- CN108155255B CN108155255B CN201711407918.8A CN201711407918A CN108155255B CN 108155255 B CN108155255 B CN 108155255B CN 201711407918 A CN201711407918 A CN 201711407918A CN 108155255 B CN108155255 B CN 108155255B
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- 230000035699 permeability Effects 0.000 title claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- CSUFEOXMCRPQBB-UHFFFAOYSA-N 1,1,2,2-tetrafluoropropan-1-ol Chemical compound CC(F)(F)C(O)(F)F CSUFEOXMCRPQBB-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 11
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- 229920000515 polycarbonate Polymers 0.000 claims abstract description 9
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000835 fiber Substances 0.000 claims abstract description 8
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- 239000004952 Polyamide Substances 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 abstract description 10
- 239000004642 Polyimide Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 7
- 206010070834 Sensitisation Diseases 0.000 abstract description 2
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- 238000000034 method Methods 0.000 description 7
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
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- 239000002994 raw material Substances 0.000 description 3
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- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- FSXXCCWUEAITLC-UHFFFAOYSA-N [Se-2].[Cd+2].[In+3] Chemical compound [Se-2].[Cd+2].[In+3] FSXXCCWUEAITLC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
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- 230000006641 stabilisation Effects 0.000 description 1
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- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
柔性衬底及薄膜电池 | 透光率(%) | 效率(%) |
实施例1 | 94.8 | 18.8 |
实施例2 | 94.2 | 18.4 |
对比例1 | 77.4 | 14.5 |
对比例2 | 83.8 | 15.7 |
对比例3 | 86.5 | 17.2 |
对比例4 | 82.0 | 15.2 |
对比例5 | 84.7 | 16.1 |
对比例6 | 85.3 | 16.8 |
对比例7 | 75.5 | 14.9 |
Claims (6)
Priority Applications (1)
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CN201711407918.8A CN108155255B (zh) | 2017-12-22 | 2017-12-22 | 一种高透性薄膜太阳能电池柔性衬底 |
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CN201711407918.8A CN108155255B (zh) | 2017-12-22 | 2017-12-22 | 一种高透性薄膜太阳能电池柔性衬底 |
Publications (2)
Publication Number | Publication Date |
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CN108155255A CN108155255A (zh) | 2018-06-12 |
CN108155255B true CN108155255B (zh) | 2019-10-08 |
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CN201711407918.8A Active CN108155255B (zh) | 2017-12-22 | 2017-12-22 | 一种高透性薄膜太阳能电池柔性衬底 |
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CN (1) | CN108155255B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102637752A (zh) * | 2012-03-06 | 2012-08-15 | 苏州大学 | 一种薄膜太阳能电池 |
CN103155174A (zh) * | 2010-08-07 | 2013-06-12 | 伊诺瓦动力有限公司 | 具有表面嵌入的添加剂的装置组件和相关的制造方法 |
CN103606633A (zh) * | 2013-11-28 | 2014-02-26 | 电子科技大学 | 一种有机电致发光与光伏一体化器件及制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120286389A1 (en) * | 2011-05-12 | 2012-11-15 | Anjia Gu | Method of design and growth of single-crystal 3D nanostructured solar cell or detector |
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2017
- 2017-12-22 CN CN201711407918.8A patent/CN108155255B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103155174A (zh) * | 2010-08-07 | 2013-06-12 | 伊诺瓦动力有限公司 | 具有表面嵌入的添加剂的装置组件和相关的制造方法 |
CN102637752A (zh) * | 2012-03-06 | 2012-08-15 | 苏州大学 | 一种薄膜太阳能电池 |
CN103606633A (zh) * | 2013-11-28 | 2014-02-26 | 电子科技大学 | 一种有机电致发光与光伏一体化器件及制备方法 |
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Effective date of registration: 20201111 Address after: Xian Ren Dong Zhen Xi Ma Dao Kou Cun, Zhuanghe City, Dalian City, Liaoning Province Patentee after: Li Ming Address before: 215151 Songshan Road, Suzhou hi tech Zone, Suzhou, Jiangsu Province, No. 143 Patentee before: SUZHOU JIA YI DA ELECTRIC APPLIANCE Co.,Ltd. |
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Effective date of registration: 20240422 Address after: Room 03, Shared Office Area, 2nd Floor, Building 22, No. 1889 Huandao East Road, Hengqin New District, Zhuhai City, Guangdong Province, 519000 Patentee after: Yaoling (Guangdong) New Energy Technology Co.,Ltd. Country or region after: China Address before: 116400 Ximadaokou Village, Xianrendong Town, Zhuanghe City, Dalian City, Liaoning Province Patentee before: Li Ming Country or region before: China |