CN108155094A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN108155094A CN108155094A CN201711270773.1A CN201711270773A CN108155094A CN 108155094 A CN108155094 A CN 108155094A CN 201711270773 A CN201711270773 A CN 201711270773A CN 108155094 A CN108155094 A CN 108155094A
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- hole
- pin
- lifter pin
- processing apparatus
- plasma processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The present invention provides a kind of plasma processing apparatus for the generation for inhibiting the paradoxical discharge as caused by through hole.Plasma processing apparatus has electrostatic chuck (6) and lifter pin (61).Electrostatic chuck (6) has the mounting surface (21) of mounting wafer (W) and the back side (22) opposite with mounting surface (21), and the pin of perforation mounting surface (21) and the back side (22) is formed with through hole (200) in the electrostatic chuck (6).At least part of lifter pin (61) is formed by insulating component, the front end of the lifter pin (61) is accommodated in pin through hole (200), which transports wafer (W) along the vertical direction by being moved along the vertical direction relative to mounting surface (21).Lifter pin (61) has conductive film (61c) with the pin corresponding fore-end of through hole (200).
Description
Technical field
The various aspects and embodiment of the present invention are related to a kind of plasma processing apparatus.
Background technology
Back and forth, it is known that it is a kind of using plasma come to the handled objects such as wafer carry out corona treatment grade from
Daughter processing unit.This plasma processing apparatus has for example in the process container that can form vacuum space as electricity
The mounting table for being used to keep handled object of pole.Plasma processing apparatus by mounting table apply regulation RF power come pair
The handled object for being configured at mounting table carries out corona treatment.The through hole for having stored lifter pin is formed in mounting table.
In plasma processing apparatus, in the case where transporting handled object, lifter pin is made to be protruded from through hole, using lifter pin from the back of the body
Surface bearing handled object come make the handled object from mounting table be detached from.In order to inhibit to send out since lifter pin is exposed to plasma
Raw paradoxical discharge, lifter pin are formed by insulating component, and lower part is formed by conductive material.
Patent document 1：Japanese Unexamined Patent Publication 2000-195935 bulletins
Invention content
Problems to be solved by the invention
However, in recent years, plasma processing apparatus is by the RF power Towards Higher Voltage for being applied to mounting table to carry out etc.
Gas ions processing.In the case where the RF power for being applied to mounting table is by Towards Higher Voltage, sometimes due to being accommodated with lifter pin
Through hole and be abnormal electric discharge.In plasma processing apparatus, when being abnormal electric discharge due to through hole, it is possible to make
The deterioration of handled object and as yield rate reduce the main reason for.
The solution to the problem
Disclosed plasma processing apparatus has electrostatic chuck and lifter pin in one embodiment.Electrostatic chuck has
There are the mounting surface of mounting handled object and the back side opposite with mounting surface, perforation mounting surface and the back side are formed in electrostatic chuck
Through-hole.At least part of lifter pin is formed by insulating component, and the front end of lifter pin is accommodated in through-hole, which passes through phase
Mounting surface is moved along the vertical direction to transport handled object along the vertical direction.Plasma processing apparatus lifter pin with
The conductive component of at least one party in the wall surface opposite with lifter pin of the corresponding fore-end of through-hole and through-hole.
The effect of invention
According to disclosed plasma processing apparatus mode, playing can inhibit to put extremely as caused by through hole
The effect of the generation of electricity.
Description of the drawings
Fig. 1 is the perspective cross-sectional slice for the structure for showing the plasma processing apparatus involved by present embodiment.
Fig. 2 is the perspective cross-sectional slice for showing the mounting table in the plasma processing apparatus of Fig. 1.
Fig. 3 is the perspective cross-sectional slice for showing the mounting table in the plasma processing apparatus of Fig. 1.
Fig. 4 is the figure for the state for schematically showing the current potential near the pin through hole of electrostatic chuck.
Fig. 5 is the figure for the fore-end for schematically showing the lifter pin for being accommodated in pin through hole.
Fig. 6 is the figure for the fore-end for schematically showing the lifter pin for being accommodated in pin through hole.
Fig. 7 is the figure for showing to calculate an example of the result of kelvin effect.
Fig. 8 is to show that the fore-end in lifter pin is formed with the figure of an example of conductive film.
Fig. 9 is the figure for showing to be formed an example of the fore-end of lifter pin using electroconductive member.
Figure 10 is the figure shown in an example for being internally embedded conductive part of the fore-end of lifter pin.
Figure 11 is the figure shown in the other an examples for being internally embedded conductive part of the fore-end of lifter pin.
Figure 12 is the figure that the variation of the current potential in pin through hole is simulated using equivalent circuit.
Figure 13 is the figure shown in an example of the conductive component of the wall surface opposite with lifter pin of pin through hole.
Figure 14 is the stereogram schematically shown near the pin through hole of electrostatic chuck.
Figure 15 A are the perspective cross-sectional slices for showing mounting table.
Figure 15 B are the damaged figures for illustrating embedded component.
Figure 16 A are the figures for illustrating the insertion component involved by third embodiment.
Figure 16 B are the figures for illustrating the insertion component involved by third embodiment.
Reference sign
W：Wafer；6：Electrostatic chuck；6c：Conductive film；6d：Cylindrical member；21：Mounting surface；22：The back side；61：Lifter pin；
61a：Sell main part；61b：Sell upper end；61c：Conductive film；61d：Recess portion；61e：Conductive part；100：Corona treatment fills
It puts；200：Pin through hole；210：Gas supply through hole；210a：Through hole；210b：Through hole；220：Embedded component.
Specific embodiment
In the following, explain the embodiment of plasma processing apparatus disclosed in the present application in detail with reference to attached drawing.In addition,
It is set as in the drawings marking same or equivalent part identical label.In addition, it is not limited to pass through present embodiment
Invention disclosed.Each embodiment can be suitably combined in the range of process content contradiction is not made.It is set as each attached
Identical label is marked in figure to same or equivalent part.In addition, the term of " on " " under " is the state based on diagram and is
It is easy to understand and uses.
(first embodiment)
[structure of plasma processing apparatus]
Fig. 1 is the perspective cross-sectional slice for the structure for showing the plasma processing apparatus involved by present embodiment.Plasma
Body processing unit 100 is airtightly formed, and is had and is set as being electrically the process container 1 of earthing potential.The process container 1 is set
It is formed for cylindrical shape, such as by aluminium etc..The processing space for generating plasma is marked in process container 1.In process container 1
Inside it is provided with flatly semiconductor crystal wafer (hereinafter referred to as " wafer " of the bearing as handled object (work-piece).) W
Mounting table 2.Mounting table 2 is configured to include base material (base portion) 2a and electrostatic chuck (ESC：Electrostatic chuck)6.Base
Material 2a is formed by the metal of electric conductivity, such as aluminium, is had the function of as lower electrode.Electrostatic chuck 6 has for electrostatic
Adsorb the function of wafer W.Mounting table 2 is supported in supporting station 4.Supporting station 4 is supported in such as the bearing formed by quartz
Component 3.In addition, the focusing ring 5 for example formed by monocrystalline silicon is provided in the periphery of the top of mounting table 2.Also, hold in processing
It is provided in a manner of surrounding around mounting table 2 and supporting station 4 in device 1 such as the cylindric inner wall structure formed by quartz
Part 3a.
First RF (Radio Frequency：Radio frequency) power supply 10a to connect with base material 2a via the first adaptation 11a, separately
Outside, the second RF power supply 10b to connect with base material 2a via the second adaptation 11b.First RF power supply 10a is used to generate plasma
Body is configured to the RF power of the base material 2a supply assigned frequencies from the first RF power supply 10a to mounting table 2.In addition, the 2nd RF
Power supply 10b is configured to the base material 2a supply frequency from the second RF power supply 10b to mounting table 2 for pulling in ion (biasing is used)
The RF power of the assigned frequency lower than the frequency of the first RF power supply 10a.Like this, mounting table 2 is configured to be applied in electricity
Pressure.On the other hand, being set in a manner of parallel and opposite with mounting table 2 in the top of mounting table 2 has as upper electrode
The nozzle 16 of function.Nozzle 16 and mounting table 2 are functioned as a pair of electrodes (upper electrode and lower electrode).
Electrostatic chuck 6 is configured to electrode 6a between insulator 6b, and DC power supply 12 is connect with electrode 6a.Moreover,
It is configured to Coulomb force be utilized to adsorb wafer W by applying DC voltage from DC power supply 12 to electrode 6a.
Refrigerant flow path 2d is formed in the inside of mounting table 2, being connected with refrigerant inlet on refrigerant flow path 2d matches
Pipe 2b, refrigerant outlet piping 2c.Moreover, it is configured to by making appropriate refrigerant such as cooling water in refrigerant stream
Cycle controls mounting table 2 for set point of temperature among the 2d of road.In addition, be provided in a manner of penetrating through 2 grade of mounting table for
The cold and hot gas supply pipe 30 transmitted with gas (backside gas) of back side supply helium gas etc. of wafer W, gas supply pipe 30 with
Gas supply source connection (not shown).By these structures, the upper surface of mounting table 2 will be held in by the absorption of electrostatic chuck 6
Wafer W controls are set point of temperature.
Mounting table 2 is provided with multiple such as three pins and (only shows one in Fig. 1 with through hole 200.), in these pins
It is equipped lifter pin 61 respectively with the inside of through hole 200.Lifter pin 61 is connected to driving mechanism 62, by driving mechanism 62 into
Row moves up and down.The structure of pin through hole 200 and lifter pin 61 is described later.
Above-mentioned nozzle 16 is set to the top wall portion of process container 1.Nozzle 16 has main part 16a and forms electrode plate
Top top plate 16b, which is supported in the top of process container 1 via insulating component 95.Main part 16a is by leading
The aluminium that electric material such as surface is anodized is formed, and is configured to detachable in the lower part of main part 16a
Ground supports top top plate 16b.
Main part 16a is being internally provided with gas diffusion chamber 16c.In addition, main part 16a in bottom to be located at gas diffusion
The mode of the lower part of room 16c is formed with a large amount of gas through-flow hole 16d.In addition, top top plate 16b is arranged to through-thickness
It is Chong Die with above-mentioned gas through-flow hole 16d to penetrate through the gas introducing port 16e that the mode of top top plate 16b is formed.In this way
Structure, be fed into the processing gas of gas diffusion chamber 16c via gas through-flow hole 16d and gas introducing port 16e to disperse
Mode for shape spray is supplied into process container 1.
The gas introduction port 16g for importing processing gas to gas diffusion chamber 16c is formed in main part 16a.Gas
One end of supplying tubing 15a is connect with gas introduction port 16g.Supply the processing gas supply source (gas supply part) of processing gas
15 are connected to the other end of gas supplying tubing 15a.Quality is disposed with from upstream side on gas supplying tubing 15a
Flow controller (MFC) 15b and open and close valve V2.Via gas supplying tubing 15a from processing gas supply source 15 to gas diffusion
16c supplies in room are used for the processing gas of plasma etching.It is led from gas diffusion chamber 16c via gas through-flow hole 16d and gas
Enter hole 16e and processing gas is supplied in a manner of being separated into shape spray into process container 1.
Variable DC power supply 72 is electrically connected to the nozzle as above-mentioned upper electrode via low-pass filter (LPF) 71
16.The variable DC power supply 72 is configured to the open and close being powered by on-off switch 73.Variable DC power supply
The on-off of 72 Current Voltage and on-off switch 73 is controlled by aftermentioned control unit 90.In addition, as be described hereinafter
As, high frequency is being applied to generate plasma in processing space from the first RF power supply 10a, the second RF power supply 10b to mounting table 2
During body, as needed on-off switch 73 is set as connecting using control unit 90, applies regulation to the nozzle 16 as upper electrode
DC voltage.
Cylindric earth conductor 1a is set as extending to from the side wall of process container 1 more top than the height and position of nozzle 16
The position of side.The earth conductor 1a of the cylindrical shape has roof at an upper portion thereof.
Exhaust outlet 81 is formed in the bottom of process container 1.The row of being connected to via exhaust pipe 82 of first exhaust device 83
Gas port 81.First exhaust device 83 has vacuum pump, is configured to by making the vacuum pump work that will subtract in process container 1
It is pressed onto specified vacuum degree.On the other hand, the side wall in process container 1 is provided with the carrying-in/carrying-out mouth 84 of wafer W, is moved at this
Mouth 84 is moved out to be provided with the gate valve 85 of 84 either on or off of the carrying-in/carrying-out mouth.
On the inside of the side of process container 1, internal face is provided with deposit shielding part 86.Deposit shielding part 86 is anti-
Only etch byproducts (deposit) are attached to process container 1.In the roughly the same with the height of wafer W of the deposit shielding part 86
Height and position be provided with the electroconductive member (GND blocks) 89 connected in a manner of it can control relative to the current potential of ground connection, by
This prevents paradoxical discharge.In addition, the deposit extended along interior wall members 3a is provided in the lower end of deposit shielding part 86
Shielding part 87.It is detachable to be set as deposit shielding part 86,87.
The plasma processing apparatus 100 of above structure acts it by control unit 90 carry out Comprehensive Control.In the control
Portion 90 processed be provided with user interface 92, storage part 93, have CPU control plasma processing apparatus 100 each section work
Skill controller 91.
User interface 92 is configured to include operating for the input of process management person into line command to handle with managing plasma
The keyboard of device 100, the display for visually showing the working condition of plasma processing apparatus 100 etc..
Preserve processing procedure in storage part 93, the processing procedure be stored with for by the control of process controller 91 come realize by etc.
The control program (software) of various processing that gas ions processing unit 100 performs, treatment conditions data etc..Moreover, as needed,
Process controller 91 is made to perform this after arbitrary processing procedure is recalled from storage part 93 based on instruction from user interface 92 etc.
Thus arbitrary processing procedure carries out desired processing under the control of process controller 91 using plasma processing apparatus 100.
In addition, about processing procedures such as control program, treatment conditions data, it can also utilize and be stored in and can be deposited by the computer that computer is read
The processing procedure of the state of storage media (such as hard disk, CD, floppy disk, semiconductor memory etc.) etc. can be from other devices for example
It is transmitted at any time via special circuit and uses the processing procedure online.
[major part structure of mounting table]
Then, the major part structure of mounting table 2 is illustrated with reference to Fig. 2 and Fig. 3.Fig. 2 and Fig. 3 be show the grade of Fig. 1 from
The perspective cross-sectional slice of mounting table in daughter processing unit.Rise the situation to support wafer W, Fig. 3 Fig. 2 shows lifter pin 61 is made
It shows that lifter pin 61 is made to decline situation about being supported on wafer W on electrostatic chuck 6.As described above, mounting table 2 is configured to
Including base material 2a, electrostatic chuck 6, the upper of electrostatic chuck 6 can be penetrated into from the insertion of the lower section of base material 2a by being configured to lifter pin 61
Side.
Electrostatic chuck 6 is in disk-shaped, has to load the mounting surface 21 of wafer W and the opposite back side of the mounting surface 21
22.Mounting surface 21 is rounded, and the wafer W of support plate disc shape is carried out with the rear-face contact of wafer W.The back of the body of base material 2a and electrostatic chuck 6
Face 22 engages.
The end (gas orifice) of gas supply pipe 30 is formed in mounting surface 21.Gas supply pipe 30 supplies the helium of cooling
Gas etc..The end of gas supply pipe 30 is by being formed in the through hole 30a of electrostatic chuck 6 and being formed in the through hole of base material 2a
30b is formed.Through hole 30a is set as penetrating into mounting surface 21 from the back side of electrostatic chuck 6 22.That is, the inner wall of through hole 30a by
Electrostatic chuck 6 is formed.On the other hand, through hole 30b be set as from the back side of base material 2a penetrate into base material 2a and electrostatic chuck 6 it
Between composition surface.That is, the inner wall of through hole 30b is formed by base material 2a.Hole of the aperture of through hole 30b for example than through hole 30a
Diameter is big.Moreover, electrostatic chuck 6 and base material 2a is configured in a manner that through hole 30a is connected with through hole 30b.In gas supply pipe
30 are configured with gas set 204 and gas separator 202.
In addition, it is formed with the pin through hole 200 of storage lifter pin 61 in mounting surface 21.Pin through hole 200 is by forming
It is formed in the through hole 200a of electrostatic chuck 6 with the through hole 200b for being formed in base material 2a.Through hole 200a is formed in electrostatic card
Disk 6, through hole 200b are formed in base material 2a.The through hole 200a for forming pin through hole 200 is set as than outer with lifter pin 61
Diameter corresponding aperture, i.e. slightly larger (such as big 0.1mm~0.5mm or so) aperture of outer diameter of lifter pin 61, can be in inside
Store lifter pin 61.The aperture of through hole 200b is for example bigger than the aperture of through hole 200a.Moreover, in the inner wall of through hole 200a
Pin set 203 and pin separator 201 are configured between the inner wall of through hole 200b and lifter pin 61.In present embodiment institute
In the electrostatic chuck 6 being related to, pin through hole 200 is formed with set 203 and pin separator 201 using pin.
At least part of lifter pin 61 is formed by insulating component.For example, lifter pin 61 has the ceramics by insulating properties
Or resin etc. is formed as the pin main part 61a of pin-shaped shape.The cylindrical shapes of pin main part 61a, outer diameter for example count mm or so.Pin
The pin upper end 61b contacted with wafer W of main part 61a is formed by carrying out chamfering to pin main part 61a, sells main body
Portion 61a has spherical surface.The spherical surface for example makes curvature very make the pin upper end 61b of lifter pin 61 whole greatly
Close to the wafer W back sides.
In addition, lifter pin 61 is led by what electroconductive member was formed having with 200 corresponding fore-end of pin through hole
Electrolemma 61c.For example, lifter pin 61 from pin main part 61a pin upper end 61b sides corresponding with the thickness of electrostatic chuck 6
In the range of have conductive film 61c.The pin upper end 61b of lifter pin 61 is contacted with wafer W, therefore preferably not by conductive film 61c
Covering.In addition, the pin upper end 61b of lifter pin 61 can also be covered by conductive film 61c.
Lifter pin 61 is moved up and down by driving mechanism 62 shown in FIG. 1 in pin through hole 200, relative to load
The mounting surface 21 for putting platform 2 is elastically acted.In addition, driving mechanism 62 adjusts lifter pin when being accommodated with lifter pin 61
The height of 61 stop position is so that the pin upper end 61b of lifter pin 61 is located at immediately below the wafer W back sides.
As shown in Fig. 2, in the state of lifter pin 61 is made to increase, for a part of pin main part 61a and pin upper end 61b
The state protruded from the mounting surface 21 of mounting table 2 becomes the state on the top that wafer W is supported on to mounting table 2.On the other hand,
As shown in figure 3, in the state of lifter pin 61 is declined, become the shape that pin main part 61a is accommodated in pin through hole 200
State, wafer W are placed in mounting surface 21.In this way, lifter pin 61 transports wafer W along the vertical direction.
In addition, the RF power Towards Higher Voltage that plasma processing apparatus 100 will be applied to mounting table 2.It is carried being applied to
In the case of the RF power of platform 2 is put by Towards Higher Voltage, sometimes due to pin through hole 200 and be abnormal electric discharge.
Fig. 4 is the figure for the state for schematically showing the current potential near the pin through hole of electrostatic chuck.As shown in figure 4,
Electrostatic chuck 6 has mounting surface 21 and the back side 22 opposite with mounting surface 21.In addition, it is placed with wafer W in mounting surface 21.Separately
Outside, it is formed with pin through hole 200 in electrostatic chuck 6.In plasma processing apparatus 100, when to mounting table 2 apply high frequency
During electric power, potential difference is generated between wafer W and the back side 22 of electrostatic chuck 6 due to the electrostatic capacitance of electrostatic chuck 6.Scheming
The equipotential line of RF current potentials generated when being applied with RF power to mounting table 2 is shown in broken lines in 4.For example, work as plasma
The RF current potentials that body processing unit 100 generates the RF power Towards Higher Voltage for being applied to mounting table 2 in pin through hole 200
Potential difference be more than discharge boundary value when, be abnormal electric discharge.
Therefore, in plasma processing apparatus 100, as shown in Figures 2 and 3, in lifter pin 61 and pin through hole
200 corresponding fore-ends are formed with the conductive film 61c formed by electroconductive member.
[example of the variation of electrical characteristics caused by conductive film]
Illustrate the mounting table 2 caused by forming conductive film 61c in the fore-end of lifter pin 61 using Fig. 5 and Fig. 6
Electrical characteristics variation.Fig. 5 and Fig. 6 is the figure for the fore-end for schematically showing the lifter pin for being accommodated in pin through hole.
As shown in Figure 5 and Figure 6, the electrostatic chuck 6 of mounting table 2 is formed with pin through hole 200, and is placed with wafer W.Electrostatic chuck 6
It is supported in base material 2a.Base material 2a is provided with the insulator 2e for insulation.In addition, Fig. 5 is shown in the front end of lifter pin 61
Part is without the state of conductive film 61c.Fig. 6 shows state of the fore-end with conductive film 61c in lifter pin 61.To load
Put in the case that platform 2 is applied with RF power, a part of insulator 2e can electrically be considered such as capacitor C1,
C2.In addition, the space around the lifter pin 61 of lifter pin 61 and pin through hole 200 can be considered capacitor C3.In Fig. 5
With equivalent circuit EC1, EC2 of electric state when showing equally to represent to be applied with RF power on the right side of Fig. 6.Such as Fig. 5 institutes
Show, in the case where being applied with RF power to mounting table 2, needle can be considered near the pin through hole 200 of mounting table 2
The equivalent circuit EC1 of capacitor C1, C2, C3 are connected in series with to the power supply PV of supply high frequency electric power.As power supply PV, such as with
First RF power supply 10a, the second RF power supply 10b are corresponded to.Tie point between the power supply PV of equivalent circuit EC1 and capacitor C3 is set
For P1.Tie point between capacitor C3 and capacitor C2 is set as P2.Potential difference phase between tie point P1 and tie point P2
When in the RF potential differences generated in pin through hole 200.When from the RF power that power supply PV is supplied by Towards Higher Voltage when, connection
Potential difference between point P1 and tie point P2 becomes larger, and is abnormal electric discharge.
On the other hand, as shown in fig. 6, in the case where the fore-end of lifter pin 61 has conductive film 61c, conductive film
61c can be considered the resistance R being connected in parallel with capacitor C3 as shown in equivalent circuit EC2.In this way in resistance R and electricity
In the case that container C3 is connected in parallel, the potential difference between tie point P1 and tie point P2 can be reduced.That is, conductive film 61c energy
Enough mitigate the RF potential differences generated in pin through hole 200.
As electroconductive member used in conductive film 61c, as long as conductive material, such as can arrange
Enumerate the conductive materials such as silicon, carbon, silicon carbide, silicon nitride, titanium dioxide, aluminium, metal.
As long as the resistance value of conductive film 61c is formed as to penetrate through in pin due to being applied to the RF power of mounting table 2
The RF potential differences generated in hole 200 are suppressed to less than the boundary value to discharge.On the other hand, in the electricity of conductive film 61c
In the case that resistance value is too low, electric current is excessively generated in conductive film 61c.It is therefore preferable that conductive film 61c is set as not excessively
Flow through the thickness of electric current.About conductive film 61c, the frequency of RF power the high, and electric current more concentrates on the surface of conductive film.It should
Phenomenon is referred to as kelvin effect (skin depth, Skin effect), is represented as following numerical expression (1).
【Numerical expression 1】
μ=μ o × μ s
μ o=1.2566370614e-6 (H/m)
Here, δ is the thickness (depth) that the surface of overcurrent is risen that flows automatically.ρ is electroconductive member used in conductive film 61c
Resistivity.μ is the magnetic conductivity of electroconductive member used in conductive film 61c.μ s are electric conductivity structure used in conductive film 61c
The relative permeability of part.F is the frequency of RF power.
Fig. 7 is the figure for showing to calculate an example of the result of kelvin effect.The example of Fig. 7 is shown for the first electric conductivity structure
The feelings that part, the second electroconductive member, third electroconductive member these three electroconductive members calculating frequency f are 40MHz and 400kHz
The result of δ under condition.For example, the electricalresistivityρ of the first electroconductive member is 4.5e2, relative permeability μ s are 1.First electric conductivity
Component thickness δ in the case where frequency f is 40MHz is calculated as 1.69 [m].In addition, the electricalresistivityρ of the second electroconductive member is
1.0e6, relative permeability μ s are 1.For second electroconductive member in the case where frequency f is 40MHz, thickness δ is calculated as 7.96e1
[m]。
Feelings thin the thickness δ of the kelvin effect of electroconductive member used in thickness ratio conductive film 61c in conductive film 61c
Under condition, the flowing of electric current is limited, and resistance increases, and the electric current of generation is reduced.It is therefore preferable that the thickness of conductive film 61c is set
10% of thickness δ for the kelvin effect of electroconductive member used in conductive film 61c is hereinafter, more preferably it is expected to be set as
Less than 1%.Thereby, it is possible to inhibit to be excessively generated electric current in conductive film 61c.
In addition, conductive film 61c can also be formed without the flat state of difference in height in the fore-end of lifter pin 61.
Fig. 8 is to show that the fore-end in lifter pin is formed with the figure of an example of conductive film.Lifter pin 61 is in the front end of pin main part 61a
Part forms recess portion 61d with depth corresponding with the film thickness of conductive film 61c.Moreover, lifter pin 61 can also be in pin main part
The recess portion 61d of 61a forms conductive film 61c.
In addition, the fore-end of lifter pin 61 formed more carefully with reduce and wafer W between contact portion.The present embodiment
Involved lifter pin 61 is set as the cylindrical shape of fore-end, and outer diameter is, for example, number mm or so.Sometimes the front end of lifter pin 61
Partial outer diameter is smaller than the thickness δ of the kelvin effect of electroconductive member used in conductive film 61c.In this case, it rises
The fore-end of drop pin 61 can also be formed by electroconductive member.For example, the outer diameter in the fore-end of lifter pin 61 is conduction
The thickness δ of the kelvin effect of property component less than 10%, be desired for less than 1% in the case of, the fore-end of lifter pin 61
It can be formed by electroconductive member.For example, in the case where frequency f is 40MHz, the thickness δ of the second electroconductive member is
7.96e1[m] is less than 1% compared to the outer diameter of the fore-end of lifter pin 61.In this case, second can also be utilized
Electroconductive member forms the fore-end of lifter pin 61.Fig. 9 is the fore-end for showing to be formed lifter pin using electroconductive member
An example figure.Lifter pin 61 is the pin upper end 61b sides from lifter pin 61 in range corresponding with the thickness of electrostatic chuck 6
Inside it is provided with the conductive part 61e formed by electroconductive member.
In addition, lifter pin 61 can also be set as setting conduction with the inside of 200 corresponding fore-end of pin through hole
The structure of property component.That is, lifter pin 61 can also be internally embedded with pin through hole 200 corresponding fore-end by conduction
Property component formed conductive part.Figure 10 is the figure shown in an example for being internally embedded conductive part of the fore-end of lifter pin.
Lifter pin 61 shown in Fig. 10 is formed with 200 being internally embedded for corresponding fore-end of pin through hole by electroconductive member
Conductive part 61f.Conductive part 61f may be multiple.Figure 11 is to show that being internally embedded for fore-end in lifter pin is led
The figure of other an examples in electric portion.Lifter pin 61 shown in Figure 11 is embedding with the inside of 200 corresponding fore-end of through hole with pin
The conductive part 61f formed there are two entering by electroconductive member.More than conductive part 61f there are three can also being embedded in.
[simulation of the variation of current potential]
Figure 12 is the figure that the variation of the current potential in pin through hole is simulated using equivalent circuit.Show in (A) of Figure 12
Go out to represent three waveform W1~W3 of the variation of current potential.Waveform W1 shows the company of Fig. 5 and equivalent circuit EC1, EC2 shown in fig. 6
The current potential of contact P1.Waveform W2 shows the current potential of the tie point P2 of equivalent circuit EC1 shown in fig. 5.That is, waveform W2 shows rising
Drop pin 61 fore-end there is no conductive film 61c in the case of current potential variation.Waveform W3 shows equivalent circuit shown in fig. 6
The current potential of the tie point P2 of EC2.That is, waveform W3 is shown in the case where the fore-end of lifter pin 61 has conductive film 61c
The variation of current potential.It is shown in (B) of Figure 12 by the amplified waveform of peak fractions of the waveform W1~W3 of (A) of Figure 12.Figure
The difference that potential difference d1 shown in 12 (B) is waveform W1 and waveform W2, shows that the fore-end in lifter pin 61 does not have conductive film
The potential difference generated in the case of 61c.Potential difference d2 is the difference of waveform W1 and waveform W3, shows the fore-end in lifter pin 61
The potential difference generated in the case of with conductive film 61c.About potential difference d2, potential difference is reduced compared with potential difference d1.In this way,
In the case where the fore-end of lifter pin 61 has conductive film 61c, potential difference is reduced.Thereby, it is possible to inhibit to be penetrated through by pin
The generation of paradoxical discharge caused by hole 200.
In this way, the plasma processing apparatus 100 involved by first embodiment has electrostatic chuck 6 and lifter pin 61.
Electrostatic chuck 6 has the mounting surface 21 of mounting wafer W and the back side 22 opposite with mounting surface 21, which, which is formed with, passes through
Logical mounting surface 21 and the pin through hole 200 at the back side 22.At least part of lifter pin 61 is formed by insulating component, the lifting
The front end of pin 61 is accommodated in pin through hole 200, and the lifter pin 61 by moving come edge along the vertical direction relative to mounting surface 21
Upper and lower directions conveyance wafer W.Plasma processing apparatus 100 is in lifter pin 61 and pin 200 corresponding front end of through hole
Dividing has conductive film 61c or conductive part 61e.Plasma processing apparatus 100 can inhibit to be drawn by pin through hole 200 as a result,
The generation of the paradoxical discharge risen.
(second embodiment)
In the plasma processing apparatus 100 involved by above-mentioned first embodiment, in lifter pin 61 and pin
It is illustrated with the situation of the 200 conductive component of corresponding fore-end of through hole.Involved by second embodiment
Plasma processing apparatus 100 in, to the conductive component of the wall surface opposite with lifter pin 61 in pin through hole 200
Situation illustrate.
Figure 13 is the figure shown in an example of the conductive component of the wall surface opposite with lifter pin of pin through hole.
Electrostatic chuck 6 is formed with pin through hole 200, and wafer W is placed in the electrostatic chuck 6.Liter is accommodated in pin through hole 200
The front end of pin 61 drops.Electrostatic chuck 6 has in the wall surface opposite with lifter pin 61 of pin through hole 200 by electroconductive member shape
Into conductive film 6c.
In addition it is also possible to the cylindrical member of electric conductivity is set to replace conductive film 6c in pin through hole 200.Figure 14 is
Schematically show the stereogram near the pin through hole of electrostatic chuck.Pin through hole 200 is formed in electrostatic chuck 6.
Can also be inserted by the cylindrical member 6d for the electric conductivity that will be correspondingly formed with pin with through hole 200 pin with through hole 200 come
In the wall surface opposite with lifter pin 61 of pin through hole 200, electroconductive member is set.In addition, it can also for example utilize electric conductivity
Component forms a part of or pin separator 201 whole corresponding with electrostatic chuck 6 of pin separator 201.
Conductive film 6c is as electroconductive member used in cylindrical member 6d, as long as conductive material,
Such as enumerate the conductive materials such as silicon, carbon, silicon carbide, silicon nitride, titanium dioxide, aluminium, metal.
Conductive film 6c, cylindrical member 6d are electrically playing a role in the same manner as the conductive film 61c of first embodiment,
Can mitigate the RF potential differences generated in pin through hole 200.
In this way, plasma processing apparatus 100 involved by second embodiment pin through hole 200 and lifter pin
61 opposite wall surfaces have conductive film 6c or cylindrical member 6d.Plasma processing apparatus 100 can inhibit by pin with passing through as a result,
The generation of paradoxical discharge caused by through-hole 200.
(third embodiment)
Then, illustrate third embodiment.The structure of plasma processing apparatus involved by third embodiment be with
10 same structure of plasma processing apparatus shown in FIG. 1, therefore identical label is marked to identical part and is saved
Slightly illustrate, mainly different parts is illustrated.
Figure 15 A are the perspective cross-sectional slices for showing mounting table.Above-mentioned gas supply pipe 30 is provided in mounting table 2, preceding
End is formed with gas supply through hole 210.Gas supply is with through hole 210 by through hole 210a and through hole 210b shapes
Into.Through hole 210a is formed in electrostatic chuck 6, and through hole 210b is formed in base material 2a.Through hole 210a and through hole 210b
Such as be formed as position consistency at normal temperatures.In the gas supply through hole 210 with the inner wall of gas supply through hole 210 it
Between setting compartment of terrain be configured with embedded component 220.
In addition, by the embedded interval of component 220 and gas supply between through hole 210 of reduction, can inhibit by gas
Body supply paradoxical discharge caused by through hole 210.Thus, for example consider the fore-end by embedded component 220 formed compared with
It is thick to reduce the interval between embedded component 220 and gas supply through hole 210.In addition, the gas that can also be conducted heat by shortening
The straight line portion in body path inhibits the paradoxical discharge as caused by gas supply through hole 210.The reason is that pass through shortening
The straight line portion in heat-conducting gas path, makes the energy of the electronics in heat-conducting gas reduce.Therefore, gas supply through hole 210
The diameter for being formed completely through hole 210b is bigger than the diameter of through hole 210a, in addition, embedded component 220 is formed as and through hole 210b
Corresponding part is thicker than the fore-end of embedded component 220.
It is sometimes embedding but in the case where reducing embedded component 220 and gas supply with the interval between through hole 210
It is damaged to enter component 220.Figure 15 B are the damaged figures for illustrating embedded component.Mounting table 2 is in the situation for carrying out corona treatment
Under, temperature for example becomes 200 DEG C from 100 DEG C and becomes high temperature.Electrostatic chuck 6 and base material 2a are sent out respectively when temperature becomes high temperature
Heat expands.Then, due to the difference of the thermal expansion between electrostatic chuck 6 and base material 2a, through hole 210a and through hole 210b is sent out
The offset of raw position.Thus, for example when by the fore-end for being embedded in component 220 be formed more slightly come reduce embedded component 220 with
It is sometimes embedding due to the offset of through hole 210a and the position of through hole 210b when the interval between through hole 210 is used in gas supply
It is damaged to enter component 220.
Therefore, a part for embedded component 220 is formed using elastic component.For example, embedded component 220 and through hole
The corresponding part of the connected component of 210a and through hole 210b is at least formed by elastic component.
Figure 16 A are the figures for illustrating the insertion component involved by third embodiment.For example, embedded component 220 is being accommodated in
Gas supply in the state of through hole 210 from the 220b sides of upper end in front end corresponding with the top half of through hole 210a
Part is formed with the conductive part 220e formed by electroconductive member, and the position that lower part is leaned on than conductive part 220e is formed using elastic component
It puts.As long as elastic component is with the offset for the position as caused by temperature change between through hole 210a and through hole 210b
The elasticity of not damaged degree.Additionally, it is preferable that elastic component has tolerance also directed to plasma.As elasticity
Component, such as enumerate fluorine resin.As fluorine resin, such as enumerate polytetrafluoroethylene (PTFE).Polytetrafluoroethylene (PTFE) is as insulating properties structure
Part functions.In addition, elastic component is not limited to fluorine resin, the component that Young's modulus is below 20GPa is enumerated.Particularly,
More preferably Young's modulus is the component of below 10GPa.
Figure 16 B are the figures for illustrating the insertion component involved by third embodiment.The electrostatic by carry out corona treatment
Chuck 6 and base material 2a become high temperature, though the thermal expansion due to electrostatic chuck 6 and base material 2a difference and through hole 210a with passing through
In the case that the offset of position occurs for through-hole 210b, pass through the company with through hole 210a and through hole 210b of embedded component 220
The logical corresponding part in part deforms, and can also inhibit the damaged generation of embedded component 220.In addition, in 6 He of electrostatic chuck
In the case that base material 2a is restored to room temperature, as shown in Figure 16 A, the offset of the position of hole 210a and through hole 210b is had no through,
The recovery of shape of embedded component 220.Even if reducing embedded component 220 and gas supply between through hole 210 as a result,
In the case of, it can also inhibit the breakage of embedded component 220.
In this way, the plasma processing apparatus 100 involved by third embodiment has electrostatic chuck 6 and base material 2a.It is quiet
There is electric card disk 6 mounting surface 21 of mounting wafer W and the back side 22 opposite with mounting surface 21, the electrostatic chuck 6 to be formed with perforation
Mounting surface 21 and the through hole 210a at the back side 22.Base material 2a have supporting electrostatic chuck 6 bearing surface, base material 2a be formed with
The through hole 210b of through hole 210a connections has embedded component 220 in through hole 210a and through hole 210b.Embedded component
The corresponding part of the connected component of the through hole 210b of the 220 through hole 210a and base material 2a with electrostatic chuck 6 is at least by bullet
Property component is formed.Even if plasma processing apparatus 100 is reducing embedded component 220 and gas supply through hole 210 as a result,
Between interval to inhibit the generation of paradoxical discharge as caused by gas supply through hole 210 in the case of, can also inhibit
The damaged generation of embedded component 220.
An embodiment is described above, but the present invention is not limited to the specific embodiment,
Various modifications or change can be carried out in the range of the purport of the present invention recorded in claims.
For example, it is also possible to first embodiment to third embodiment is implemented in combination.For example, also may be used
To be, plasma processing apparatus 100 is formed with conductive film in lifter pin 61 with pin with 200 corresponding fore-end of through hole
61c, and it is formed with conductive film 6c in the wall surface opposite with lifter pin 61 of pin through hole 200.In addition, corona treatment fills
Lifter pin 61 can also be formed as embedded component 220 by putting 100.Embedded component 220 can also be utilized as lifter pin 61
Electroconductive member is formed.
In addition, the conductive film 61c or conductive part 61e of first embodiment can not also be arranged on being used with pin for lifter pin 61
The entire circumferential surface of 200 corresponding fore-end of through hole.For example, it is also possible to the circumferential surface of the circumferential part for fore-end
Conductive film 61c or conductive part 61e is set.In addition, for example can also the fore-end of lifter pin 61 circumferential surface with electrostatic card
The corresponding length of thickness of disk 6 sets multiple conductive film 61c or conductive part 61e with being circumferentially separated.Second embodiment is led
Electrolemma 6c can not also be set to the entire wall surface opposite with lifter pin 61 of pin through hole 200.As long as it for example, is used for pin
The wall surface setting conductive film 6c of a circumferential part for through hole 200.In addition, for example, it is also possible in pin through hole 200
Wall surface multiple conductive film 61c are set with the length of through hole 200 with pin with being circumferentially separated.
In addition, in first embodiment and second embodiment, plasma processing apparatus 100 can also be used by diameter
The plasma generated to line slot antenna (Radial line slotantenna).
Claims (14)
1. a kind of plasma processing apparatus, which is characterized in that have：
Electrostatic chuck has the mounting surface of mounting handled object and the back side opposite with the mounting surface, in the electrostatic chuck
It is formed with the through-hole for penetrating through the mounting surface and the back side；And
Lifter pin, at least part are formed by insulating component, and the front end of the lifter pin is accommodated in the through-hole, the lifter pin
By moving to transport the handled object along the vertical direction along the vertical direction relative to the mounting surface,
Wherein, the fore-end corresponding with the through-hole of the lifter pin and the wall opposite with the lifter pin of the through-hole
The conductive component of at least one party in face.
2. plasma processing apparatus according to claim 1, which is characterized in that
The lifter pin has the conductive film formed by electroconductive member in the fore-end.
3. plasma processing apparatus according to claim 1, which is characterized in that
The fore-end of the lifter pin is formed by electroconductive member.
4. plasma processing apparatus according to claim 1, which is characterized in that
The fore-end of the lifter pin includes electroconductive member in inside.
5. plasma processing apparatus according to claim 1, which is characterized in that
The electrostatic chuck has the conduction formed by electroconductive member in the wall surface opposite with the lifter pin of the through-hole
Film.
6. plasma processing apparatus according to claim 1, which is characterized in that
Electrostatic chuck cylindrical member conductive in the through-hole.
7. a kind of plasma processing apparatus, which is characterized in that have：
Electrostatic chuck has the mounting surface of mounting handled object and the back side opposite with the mounting surface, in the electrostatic chuck
It is formed with the first through hole for penetrating through the mounting surface and the back side；And
Base station has the bearing surface for supporting the electrostatic chuck, the base station be formed with connected with the first through hole the
Two through-holes have embedded component in the first through hole and the second through-hole,
Wherein, second through-hole of the first through hole and base station with the electrostatic chuck of the embedded component
The corresponding part of connected component is at least formed by elastic component.
8. plasma processing apparatus according to claim 7, which is characterized in that
The elastic component is formed by the component that Young's modulus is below 20GPa.
9. plasma processing apparatus according to claim 7 or 8, which is characterized in that
The fore-end by the first through hole side of the embedded component has the conductive film formed by electroconductive member.
10. plasma processing apparatus according to claim 7 or 8, which is characterized in that
The fore-end by the first through hole side of the embedded component is formed by electroconductive member.
11. plasma processing apparatus according to claim 7 or 8, which is characterized in that
The fore-end by the first through hole side of the embedded component includes electroconductive member in inside.
12. plasma processing apparatus according to claim 7 or 8, which is characterized in that
The wall surface opposite with the embedded component of the first through hole and at least one party in second through-hole have by leading
The conductive film that electrical component is formed.
13. plasma processing apparatus according to claim 7 or 8, which is characterized in that
The conductive cylindrical member in the first through hole and second through-hole.
14. a kind of plasma processing apparatus, which is characterized in that have：
Electrostatic chuck has the mounting surface of mounting handled object and the back side opposite with the mounting surface, in the electrostatic chuck
It is formed with the first through hole and the second through-hole for penetrating through the mounting surface and the back side；
Lifter pin, at least part are formed by insulating component, and the front end of the lifter pin is accommodated in the first through hole, should
Lifter pin transports the handled object along the vertical direction by being moved along the vertical direction relative to the mounting surface；And
Base station has the bearing surface for supporting the electrostatic chuck, the base station be formed with connected with second through-hole the
Three through-holes have embedded component in second through-hole and third through-hole,
Wherein, the fore-end corresponding with the first through hole of the lifter pin and the first through hole with the lifter pin
The conductive component of at least one party in opposite wall surface,
The connection of the third through-hole of the second through-hole and base station with the electrostatic chuck of the embedded component
The corresponding part in part is at least formed by elastic component.
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| CN110610840A (en) * | 2018-06-14 | 2019-12-24 | 北京北方华创微电子装备有限公司 | Bearing table and plasma equipment |
| CN111430232A (en) * | 2019-01-09 | 2020-07-17 | 东京毅力科创株式会社 | Plasma processing apparatus and mounting table of plasma processing apparatus |
| CN113035682A (en) * | 2019-12-25 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processing device thereof |
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| JP7149739B2 (en) * | 2018-06-19 | 2022-10-07 | 東京エレクトロン株式会社 | Mounting table and substrate processing device |
| DE102018009630A1 (en) * | 2018-12-11 | 2020-06-18 | Vat Holding Ag | Pen lifting device with temperature sensor |
| CN111326470A (en) * | 2018-12-17 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | Electrostatic chuck and semiconductor device |
| JP2022094023A (en) | 2020-12-14 | 2022-06-24 | 東京エレクトロン株式会社 | Plasma processing apparatus |
| US12020977B2 (en) * | 2021-03-12 | 2024-06-25 | Applied Materials, Inc. | Lift pin assembly |
| TW202333191A (en) * | 2021-10-28 | 2023-08-16 | 日商東京威力科創股份有限公司 | Plasma processing device and electrostatic chuck |
| WO2023153021A1 (en) * | 2022-02-09 | 2023-08-17 | 日本碍子株式会社 | Member for semiconductor manufacturing device |
| US11764094B2 (en) | 2022-02-18 | 2023-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor processing tool and methods of operation |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2018093173A (en) | 2018-06-14 |
| TWI748009B (en) | 2021-12-01 |
| TW202207306A (en) | 2022-02-16 |
| CN108155094B (en) | 2022-02-15 |
| TWI797802B (en) | 2023-04-01 |
| KR102414854B1 (en) | 2022-06-29 |
| CN114512391A (en) | 2022-05-17 |
| JP7130359B2 (en) | 2022-09-05 |
| KR20180064302A (en) | 2018-06-14 |
| TW201826389A (en) | 2018-07-16 |
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