CN108153058A - A kind of quantum dot film and preparation method, backlight module, display equipment - Google Patents
A kind of quantum dot film and preparation method, backlight module, display equipment Download PDFInfo
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- CN108153058A CN108153058A CN201810043113.8A CN201810043113A CN108153058A CN 108153058 A CN108153058 A CN 108153058A CN 201810043113 A CN201810043113 A CN 201810043113A CN 108153058 A CN108153058 A CN 108153058A
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of quantum dot film and preparation method, backlight module and display equipment.The quantum dot film includes the carrier layer being made of comb-shaped polymer and the quantum dot layer being made of quantum dot, and the side chain of comb-shaped polymer is polar side chain.When carrier layer is in contact with quantum dot layer, the polar side chain of comb-shaped polymer captures quantum dot by way of polarity selection coordination, and quantum dot is independently attached on the side chain of comb-shaped polymer, and the binding force of the side chain of quantum dot and comb-shaped polymer is stronger.Since the selection of quantum point-polarity is coordinated on the side chain of comb-shaped polymer, thus quantum dot will not reunite when being combined with comb-shaped polymer, quantum dot is not in the situation of the rapid red shift of emission wavelength, brightness decay in photoluminescent process, and then will not lead to the problem of colour cast without Obstruct membrane quantum dot film.The setting of multilayer carrier layer can improve the water oxygen iris action of quantum dot film, so as to the Obstruct membrane of abandoning tradition, realize no Obstruct membrane quantum dot film, reduce production cost.
Description
Technical field
The present invention relates to technical field of liquid crystal display more particularly to a kind of quantum dot film and preparation method, backlight module, show
Show equipment.
Background technology
With the continuous development of LCD technology, consumer is higher and higher to the colour gamut requirement of liquid crystal display.Phase
LCD technology development should be increasingly becoming in colour gamut requirement of the consumer to liquid crystal display, high colour gamut liquid crystal display
Main product.At present, the colour gamut of liquid crystal display is mainly embodied by the colour developing of backlight module in liquid crystal display, i.e.,
Realize that high colour gamut develops the color by the quantum dot film set above the diffuser plate or light guide plate of backlight module.
In the relevant technologies, the structure of quantum dot film is usually as shown in Figure 1.As shown in Figure 1, which mainly includes amount
The son point layer a and barrier film layer b positioned at quantum dot layer a both sides.Wherein, quantum dot layer a includes polymeric matrix and dispersion
The quantum dot of CdSe, CdTe, CdS etc. in a polymer matrix；Barrier film layer b has and prevents quantum dot and vapor, oxygen
The effect that gas is contacted and failed.In general, barrier film layer b is water oxygen Obstruct membrane, i.e., surface has aluminum oxide coating layer or other are inorganic
PET (polyethylene glycol terephthalate, polyethylene terephthalate) film of object coating.Due to amount
Son point film includes two layers of barrier film layer b, and the cost for obstructing film layer b accounts for 45% or so of quantum dot film totle drilling cost, thus carries
The production cost for obstructing the quantum dot film of film layer is higher.
To reduce the production cost of quantum dot film, the quantum dot film of no Obstruct membrane is increasingly becoming the main of quantum dot film research and development
Trend.At present, the preparation method of no Obstruct membrane quantum dot film predominantly wraps up one layer of ligand outside quantum dot, then will be after package
Quantum dot be distributed in polymeric matrix.However, research test find, the above method prepare without Obstruct membrane quantum dot film
In, vapor, oxygen meeting rapid erosion polymeric matrix so that the ligand for wrapping up quantum dot falls off or destroys, and shows
Expose quantum dot.Since the grain size of quantum dot is usually nanoscale, thus the quantum dot manifested is easily in a polymer matrix
To reunite, this causes quantum dot to occur the situation of the rapid red shift of emission wavelength, brightness decay in photoluminescent process, and then
No Obstruct membrane quantum dot film is caused to lead to the problem of colour cast, influences the display brightness of backlight module.
Invention content
The present invention provides a kind of quantum dot film and preparation method, backlight module, display equipment, to solve existing no Obstruct membrane
Quantum dot film leads to the problem of colour cast.
In a first aspect, the present invention, which provides a kind of quantum dot film, includes the carrier layer being made of comb-shaped polymer and by quantum
The quantum dot layer that point is formed, wherein, the side chain of the comb-shaped polymer is polar side chain；
The quantum dot layer is coated in the surface of the carrier layer；And the quantum dot is attached on the polar side chain.
Second aspect, the present invention provide a kind of preparation method of quantum dot film, the method includes：
Comb-shaped polymer is prepared, the comb-shaped polymer coating forms carrier layer, and the carrier layer is dry, spare；
Quantum dot is dispersed in polar solvent, obtains quantum dot solution；
By quantum dot solution spray in the carrier layer, quantum dot film is formed.
The third aspect, the present invention provides a kind of backlight module, including light guide plate, prismatic lens and quantum dot film, the amount
Son point film is folded between the light guide plate and the prismatic lens, and the quantum dot film is the quantum dot film or second of first aspect
Quantum dot film prepared by aspect.
Fourth aspect, the present invention provide a kind of display equipment, the backlight module including the third aspect.
The technical solution that the embodiment of the present invention provides can include the following benefits：
The present invention provides a kind of quantum dot film and preparation method, backlight module and display equipment.The quantum dot film include by
The carrier layer and the quantum dot layer being made of quantum dot that comb-shaped polymer is formed, wherein, carrier layer is in contact with quantum dot layer.
When carrier layer is in contact with quantum dot layer, the polar side chain of comb-shaped polymer captures quantum by way of polarity selection coordination
Point, so that quantum dot is attached on the side chain of comb-shaped polymer, and the binding force of the side chain of quantum dot and comb-shaped polymer
It is relatively strong.Since the selection of quantum point-polarity is coordinated on the side chain of comb-shaped polymer, thus quantum dot is combined with comb-shaped polymer
Shi Buhui reunites, and quantum dot is not in the rapid red shift of emission wavelength, brightness decay in photoluminescent process as a result,
Situation, and then will not lead to the problem of colour cast without Obstruct membrane quantum dot film.
It should be understood that above general description and following detailed description are only exemplary and explanatory, not
It can the limitation present invention.
Description of the drawings
In order to illustrate more clearly of the technical solution of the application, letter will be made to attached drawing needed in the embodiment below
Singly introduce, it should be apparent that, for those of ordinary skills, without having to pay creative labor,
It can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is the structure diagram of quantum dot film in the relevant technologies；
Fig. 2 is the structure diagram of individual layer quantum dot film provided in an embodiment of the present invention；
Fig. 3 is the structure diagram of comb-shaped polymer provided in an embodiment of the present invention；
Fig. 4 is the structure diagram of multi-layer quantum point film provided in an embodiment of the present invention；
Fig. 5 is the preparation method flow diagram of quantum dot film provided in an embodiment of the present invention；
Fig. 6 is that the SEM (scanning electron microscope, scanning electron microscope) of commercially available quantum dot film is examined
Mapping；
Fig. 7 is that the SEM of CdSe/ZnS/PS-acyl-P provided in an embodiment of the present invention (AM-co-GMA) quantum dot film is detected
Figure.
Specific embodiment
In existing relevant no Obstruct membrane quantum dot film, vapor, oxygen meeting rapid erosion polymeric matrix so that packet
The ligand for wrapping up in quantum dot falls off or destroys, and manifests quantum dot.Since the grain size of quantum dot is usually nanoscale, because
And the quantum dot manifested is easily reunited in a polymer matrix.The quantum dot of reunion leads to the forbidden band of quantum spot semiconductor
Width narrows, and occurs the situation of the rapid red shift of emission wavelength, brightness decay in photoluminescent process so as to cause quantum dot, into
And no Obstruct membrane quantum dot film is caused to lead to the problem of colour cast, influence the display brightness of backlight module.
To solve the above problems, the embodiment of the present invention provides a kind of quantum dot film, attached drawing 2 is specifically please referred to.It is of the invention real
The quantum dot film for applying example offer includes the carrier layer being made of comb-shaped polymer and the quantum dot layer being made of quantum dot,
In, the side chain of comb-shaped polymer is polar side chain.Quantum dot layer is coated in the surface of carrier layer, and quantum dot is attached to pectination and gathers
On the polar side chain for closing object.
Specifically, quantum dot of the quantum dot for nucleocapsid, i.e. quantum dot core outer wrapping used by the embodiment of the present invention
One layer of housing.In embodiments of the present invention, quantum dot core select II-VI race semi-conducting material quantum dot, as CdSe, CdTe,
CdS etc.；Housing selects the inert inorganic materials such as ZnS, is consequently formed with the inert inorganics material such as the cores such as CdSe, CdTe, CdS, ZnS
Expect the core-shell type quantum dot for housing, such as CdSe/ZnS.Above-mentioned quantum dot core has larger specific surface area, this causes quantum
More shell material can be distributed outside point core.When not wrapped up completely by housing outside quantum dot core, quantum dot core
Lattice coordination is unsaturated, this causes the surface of quantum dot core still to have the ability with other Atomic coordinates, i.e. quantum dot core table
There are dangling bonds in face, and quantum dot core is with polarity.Since the side chain of comb-shaped polymer is polar side chain, thus to lead to quantum dot
It crosses polarity effect to be incorporated on the side chain of comb-shaped polymer, in quantum dot provided in an embodiment of the present invention, outside quantum dot core simultaneously
Not exclusively wrapped up by inert inorganic material.
In the actual fabrication process of quantum dot film, according to the luminosity of quantum dot film to be prepared, it is suitable to select
The quantum dot of emission wavelength and suitable quantum dot core, shell amount ratio.
Comb-shaped polymer includes main chain and side chain used by the embodiment of the present invention, wherein, a plurality of side chain distribution is in main chain
Unilateral side or both sides, comb-shaped polymer as shown in Figure 3 is consequently formed.Include hydroxyl, carboxylic on the side chain of comb-shaped polymer
Base and/or amino isopolarity group, as a result, the side chain of comb-shaped polymer be rendered as polar side chain.Due to the side of comb-shaped polymer
Chain is polar side chain, and quantum dot surface is there are dangling bonds, thus the side chain of comb-shaped polymer can have rule by polarity effect
Rule ground captures quantum dot, so as to make quantum dot absorption on polar side chain.Research detection is it is found that general attached on every polar side chain
3-5 quantum dot, is achieved in the dispersion of quantum dot.In addition, due to being connected between quantum dot and polar side chain by polar bond
It connects, thus binding force is stronger, quantum dot will not occur mobile and be reunited on polar side chain, and quantum dot will not be from polar side chain
On come off.Since quantum dot will not occur mobile on polar side chain and reunite, thus by quantum dot and with polar side chain
Quantum dot film prepared by comb-shaped polymer is not in the feelings of the rapid red shift of emission wavelength, brightness decay in luminescence generated by light
Condition, and then quantum dot film will not occur and lead to the problem of colour cast.
Further, comb-shaped polymer is high polymer, and the side chain of high polymer easily destroys under the irradiation of short-wavelength light
And lose polarity, that is, it is rendered as ageing state.When comb-shaped polymer is rendered as ageing state, then quantum dot is no longer adsorbed, caused
Quantum dot is made to reunite.To avoid the aging under long-term UV photograph of the side chain of high polymer, the pectination in the embodiment of the present invention
The side chain preference of polymer selects the segment insensitive to ultraviolet light, to extend the service life of quantum dot film.
In embodiments of the present invention, due to the base material that comb-shaped polymer is quantum dot attachment, thus quantum dot film needs to have
Standby certain deflection and hardness.For quantum dot film is made to have certain deflection and hardness, the main chain of comb-shaped polymer is preferentially selected
Stiff backbone.Meanwhile to prevent from reacting between main chain and side chain, the stiff backbone of selection also should be apolar chain.At this
In inventive embodiments, comb-shaped polymer selects pectination epoxy polymer, pectination polyamino acid polymers or pectination polyphenyl polymer
Deng.Wherein, pectination epoxy polymer is the comb-shaped polymer containing epoxy group in stiff backbone, such as PS-acyl-P (AM-co-
GMA) pectination epoxy polymer etc..Pectination polyamino acid polymers are the pectination polymerization containing rigid polyaminoacid chain in main chain
Object, such as the poly- γ -3- nitrine propyl-Pidolidone main chain of rigidity.Pectination polyphenyl polymer includes rigid polyphenyl, side for main chain
Chain includes the comb-shaped polymer of polystyrene, such as FMS-EE-FA (poly- (methacrylic acid-co- octadecyl methacrylates)-(second
Hydramine-ethylenediamine folic acid)) etc..
Attached drawing 2 is please referred to, quantum dot film provided in an embodiment of the present invention overlays on the table of comb-shaped polymer by quantum spot printing
Face is formed, i.e., quantum dot is located at the surface of comb-shaped polymer.Since the housing of used quantum dot is inert inorganic material, and
The exposed quantum dot core of quantum dot is combined with polar side chain, thus quantum dot is not easily susceptible to the influence of external environment, Jin Erben
The outside for the quantum dot film that inventive embodiments provide need not coat Obstruct membrane, realize no Obstruct membrane quantum dot film, reduce production
Cost.
Further, the quantum dot film that above-described embodiment provides is individual layer without Obstruct membrane quantum dot film, thus in quantum dot film
Quantum dot limited amount, cause luminous intensity not high.To make quantum dot film that there is higher luminous intensity and structural strength,
Another kind quantum dot film provided in an embodiment of the present invention is multi-layer quantum point film, i.e., multi-layer quantum point film include multilayer carrier layer with
And multi-layer quantum point layer, and carrier layer and quantum dot layer are repeated in setting, and form layer structure, specifically please refer to attached drawing 4.When
When quantum dot film is multi-layer quantum point film, it may be all carrier layer positioned at the outermost substance of quantum dot film, be all quantum dot layer,
Or it is quantum dot layer that side, which is carrier layer opposite side, the outermost substance of quantum dot film is set according to practical application.
When the outermost substance of quantum dot film is quantum dot layer, although inert inorganic material is not easily susceptible to external environment
It influences, if but be placed in external environment for a long time, inert inorganic material can still be affected, and quantum dot core is caused to be exposed to sky
In gas.The semi-conducting material quantum dot core of II-VI race has higher activity, is vulnerable to environment, therefore the quantum dot core of exposure
Easily inactivation, and then cause to be located at the outermost quantum point failure of quantum dot film.To avoid generating the above problem, then can measure
The outside both sides of son point film paste food-grade PET simultaneously, are exposed in air to avoid quantum dot core.Wherein, food-grade PET
Barrier coefficient be 100g(ml)/m2·Mpa·d。
Attached drawing 5 is please referred to, attached drawing 5 shows the preparation method flow signal of quantum dot film provided in an embodiment of the present invention
Figure.By attached drawing 5 it is found that the preparation method of quantum dot film provided in an embodiment of the present invention includes：
S01：Comb-shaped polymer is prepared, comb-shaped polymer coating forms carrier layer, and carrier layer is dry, spare.
Since the comb-shaped polymer of selection is different, thus the material for preparing comb-shaped polymer is different.The embodiment of the present invention carries
During the quantum dot film preparation of confession, comb-shaped polymer in the preparation, can pass through graft side chain mode or band on polymer main chain
Backbone polymerization mode for having side chain etc. is prepared, and the embodiment of the present invention does not limit the preparation method of comb-shaped polymer, as long as energy
Enough form structure shown in attached drawing 3.
After the completion of prepared by comb-shaped polymer, comb-shaped polymer coating is formed into carrier layer, it is spare after carrier layer drying.Its
In, the thickness of carrier layer is set according to needs of production.During comb-shaped polymer coating forms carrier layer, pectination is gathered
Object brushing is closed on base material, etc. after carrier layers drying, spare or comb-shaped polymer and base material are removed from base material, load are collectively formed
Body layer is spare.In embodiments of the present invention, base material select smooth surface, flexible PET (polyethylene glycol
Terephthalate, polyethylene terephthalate), PC (Polycarbonate, makrolon), PMMA
(polymethyl methacrylate, polymethyl methacrylate), PP (Polypropylene, polypropylene), PU
(polyurethane, polyurethane) or TPU (Thermoplastic polyurethanes, thermoplastic polyurethane elastomer rubber
Glue) etc..
S02：Quantum dot is dispersed in polar solvent, obtains quantum dot solution.
Quantum dot can be prepared voluntarily or be obtained by channels such as purchases.Ready quantum dot is dispersed in polar solvent
In, obtain quantum dot solution.The concentration of quantum dot solution is according to side chain quantity, pendant polar power for selecting comb-shaped polymer etc.
Setting.In addition, the polar solvent selected in the embodiment of the present invention includes ethyl alcohol, normal heptane, methyl ether or tetrahydrofuran etc..
S03：By quantum dot solution spray on a carrier layer, quantum dot film is formed.
By in the carrier layer of quantum dot solution spray after the drying, quantum dot layer is formed.Packet is formed after quantum dot layer drying
Include the individual layer quantum dot film of carrier layer and quantum dot layer.Quantum dot solution spray formed the thickness of quantum dot layer equally also according to
Needs of production is set.
Further, after the drying of individual layer quantum dot film, continue to brush comb-shaped polymer on individual layer quantum dot film.Etc. pectinations gather
After closing object drying, then quantum dot solution is sprayed, so repeat brushing, spray, obtain multilayer laminar quantum dot film.Carrier layer and amount
The number of plies of son point layer is set according to practical application.
The system of the quantum dot film is illustrated by taking CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film as an example below
Standby process.The preparation process of the quantum dot film is merely illustrative description, does not limit quantum dot film provided in an embodiment of the present invention
Structure, do not limit the preparation process of quantum dot film provided in an embodiment of the present invention yet.
The specific preparation process of CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film includes：
S101：Comb-shaped polymer is prepared, comb-shaped polymer coating forms carrier layer, and carrier layer is dry, spare.
S1011：Selection grain size is 200~260 μm, the chloracetylated polystyrene microballoon that Cl loadings are 4.63mmol/g
(referred to as：PS-acyl-Cl it is) to prepare the initiator of PS-acyl-P (AM-co-GMA) pectination epoxy polymer.Select methyl-prop
Olefin(e) acid ethylene oxidic ester (Glycidyl methacrylate, GMA) and hydrophilic acrylamide (Acrylamide, AM) are common
Poly- grafted monomers.Treated stannous chloride (CuCl) and 2 is selected, 2 '-bipyridyl (2,2'-Dipyridyl, Bpy) is is catalyzed
Agent, wherein, stannous chloride impregnates repeatedly respectively in glacial acetic acid and ethyl alcohol, the low temperature drying under nitrogen protective condition after immersion,
The stannous chloride that obtains that treated.
S1012：Using copolymerized grafting monomer as raw material, pass through atom transferred free radical under the action of initiator and catalyst
PS-acyl-P (AM-co-GMA) prepolymer of polymerization grafting synthesis with flexible side-chains.Using atom transferred free radical
During polymerization synthesis PS-acyl-P (AM-co-GMA) prepolymer, PS-acyl-Cl, CuCl, Bpy, AM and GMA's
Mass ratio is 1:1:2:20:60.PS-acyl-P (AM-co-GMA) prepolymer formed reaction equation be：
S1013：The PS-acyl-P being prepared (AM-co-GMA) prepolymer is used and vacuumizes repeatedly, lead to nitrogen
Mode is handled, to remove the air in PS-acyl-P (AM-co-GMA) prepolymer.
S1014：PS-acyl-P (AM-co-GMA) prepolymer for removing air is placed in 80 DEG C of oil baths and reacts 2h, is obtained
To reactant.
S1015：After reaction, reaction product is used into N-N dimethylformamides (N, N- respectively
Dimethylformamide, DMF) and the multiple filter wash of water to neutrality, it is former to remove extra reaction and with methanol filter wash 3 times
Material.
S1016：The reactant for removing reaction raw materials is dry under the conditions of vacuum pressure is 100-500Pa, temperature is 30 DEG C
To constant weight, PS-acyl-P (AM-co-GMA) pectination epoxy polymer is obtained.
S1017：PS-acyl-P (AM-co-GMA) pectinations epoxy polymer is coated in PET base material, forms PS-
Acyl-P (AM-co-GMA) single-carrier layer, the thickness of PS-acyl-P (AM-co-GMA) single-carrier layer is about 1-3 μm.
S102：Quantum dot is dispersed in polar solvent, obtains quantum dot solution.
According to the luminosity of prepared quantum dot film, the CdSe/ZnS or other types of appropriate glow peak wavelength are selected
Quantum dot.Quantum dot is dispersed in ethanol solution, forms quantum dot solution.
S103：By quantum dot solution spray on a carrier layer, quantum dot film is formed.
The quantum dot solution of preparation is sprayed on PS-acyl-P (AM-co-GMA) single-carrier layer, is formed after dry
CdSe/ZnS/PS-acyl-P (AM-co-GMA) individual layer quantum dot film.Based on individual layer quantum dot film, in individual layer quantum dot film
On continue 1-3 μm PS-acyl-P (AM-co-GMA) pectination epoxy polymer of coating, wait it is dry after spray quantum dot solution again,
It is so repeated multiple times, obtain certain thickness multilayer laminar quantum dot film.Select the multilayer laminar quantum that thickness is 50-100 μm
Point film.Food-grade barrier PET is pasted in the both sides of multilayer laminar quantum dot film, obtains the anti-red shift brightness decay of no Obstruct membrane
Quantum dot film.
By selecting the epoxy resin with compactness in this present embodiment to prepare raw material, thus the carrier layer prepared can
Certain water oxygen barrier property is provided, and then the water oxygen barrier property of the quantum dot film of multilayer laminar structure is stronger.
To verify that the quantum dot in quantum dot film provided in an embodiment of the present invention is not reunited, the embodiment of the present invention with
SEM detections are carried out for CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film.In SEM detections, commercially available quantum is selected
Point film is comparative example, and testing result please refers to attached drawing 6,7.Attached drawing 6 shows the SEM detections for the quantum dot film that comparative example provides
Figure；Attached drawing 7 shows the SEM inspections of CdSe/ZnS/PS-acyl-P provided in an embodiment of the present invention (AM-co-GMA) quantum dot film
Mapping.By attached drawing 6 it is found that in the quantum dot film that comparative example provides, quantum dot occurs significantly to reunite in the polymer.By attached drawing
7 it is found that apparent stratiform knot is presented in CdSe/ZnS/PS-acyl-P provided in an embodiment of the present invention (AM-co-GMA) quantum dots film
Structure, and CdSe/ZnS quantum dots are evenly distributed in PS-acyl-P (AM-co-GMA) pectination epoxy polymer, each CdSe/
Without reuniting between ZnS quantum dot.
The embodiment of the present invention carries out quantum dot film also by taking CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film as an example
The detection of the characteristics of luminescence detects the light emission luminance and peak wavelength of quantum dot film.In characteristics of luminescence test, commercially available amount is selected
Son point film is comparative example.The detailed process of characteristics of luminescence test includes：The quantum dot that the embodiment of the present invention and comparative example are provided
Film is placed in the environment that temperature is 45 DEG C, humidity is 85%RH, uses blue light strength as 100mw/cm2Blue light cycle shine
It penetrates.When reaching 0h, 100h, 500h, 1000h, 1500h, 2000h, 2500h, 3000h and 5000h between upon irradiation, measure respectively
The light emission luminance and peak wavelength of quantum dot film that the embodiment of the present invention and comparative example provide, specific detection data please refer to table 1.
Table 1：The characteristics of luminescence detection data of quantum dot film that the embodiment of the present invention and comparative example provide
As shown in Table 1, for light emission luminance, with the extension of light application time, quantum dot film provided in an embodiment of the present invention
The light emission luminance of the quantum dot film provided with comparative example reduces, but the light emission luminance of quantum dot film that comparative example provides reduces width
Degree reduces amplitude much larger than the light emission luminance of quantum dot film provided in an embodiment of the present invention.Thus, it is possible to illustrate, the present invention is implemented
The quantum dot film that example provides can provide light for a long time, and with longer service life.
For peak wavelength, with the extension of light application time, the peak wavelength of quantum dot film provided in an embodiment of the present invention
Do not change, and the peak wavelength of quantum dot film that comparative example provides is obviously prolonged.Thus, it is possible to illustrate, the present invention is implemented
The quantum dot film that example provides has the stable characteristics of luminescence.
The embodiment of the present invention also provides a kind of backlight module, which includes light guide plate, prismatic lens and be located to lead
Quantum dot film between tabula rasa and prismatic lens.The quantum dot film is the quantum dot film in above-described embodiment.Since the present invention is implemented
The quantum dot film that example provides has very high excitation light efficiency, and the characteristic of service life length, thus backlight module is capable of providing
Higher brightness, and longer life expectancy.
The embodiment of the present invention also provides a kind of display equipment, which includes above-mentioned backlight module.
Those skilled in the art will readily occur to the present invention its after considering specification and putting into practice the disclosure invented here
Its embodiment.This application is intended to cover the present invention any variations, uses, or adaptations, these modifications, purposes or
Person's adaptive change follows the general principle of the present invention and including undocumented common knowledge in the art of the invention
Or conventional techniques.Description and embodiments are considered only as illustratively, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be understood that the relational terms of such as " first " and " second " or the like be used merely to an entity or
Operation is distinguished with another entity or operation, and without necessarily requiring or implying between these entities or operation, there are any
This practical relationship or sequence.The invention is not limited in the precision architecture for being described above and being shown in the drawings,
And various modifications and changes may be made without departing from the scope thereof.The scope of the present invention is only limited by appended claim
System.
Claims (10)
1. a kind of quantum dot film, which is characterized in that formed including the carrier layer being made of comb-shaped polymer and by quantum dot
Quantum dot layer, wherein, the side chain of the comb-shaped polymer is polar side chain；
The quantum dot layer is coated in the surface of the carrier layer, and the quantum dot is attached on the polar side chain.
2. quantum dot film according to claim 1, which is characterized in that the polar group of the polar side chain include hydroxyl,
Carboxyl and/or amino.
3. quantum dot film according to claim 1, which is characterized in that the comb-shaped polymer includes pectination epoxide polymerization
Object, pectination polyamino acid polymers or pectination polyphenyl polymer.
4. quantum dot film according to claim 3, which is characterized in that the pectination epoxy polymer includes PS-acyl-P
(AM-co-GMA) pectination epoxy polymer；The main chain of the pectination polyamino acid polymers includes rigid polyaminoacid chain；It is described
The main chain of pectination polyphenyl polymer includes rigid polyphenyl, and side chain includes polystyrene.
5. the quantum dot film according to any one in claim 1-4, which is characterized in that the quantum dot film includes multilayer
Quantum dot layer described in the carrier layer and multilayer, the carrier layer and the quantum dot layer are repeated in setting.
6. quantum dot film according to claim 5, which is characterized in that positioned at the outermost carrier layer and/or described
Food-grade PET is pasted on quantum dot layer.
7. a kind of preparation method of quantum dot film, which is characterized in that the method includes：
Comb-shaped polymer is prepared, the comb-shaped polymer coating forms carrier layer, and the carrier layer is dry, spare；
Quantum dot is dispersed in polar solvent, obtains quantum dot solution；
By quantum dot solution spray in the carrier layer, quantum dot film is formed.
8. the preparation method of quantum dot film according to claim 7, which is characterized in that described to spray the quantum dot solution
Leaching forms quantum dot film and includes in the carrier layer：
By quantum dot solution spray in the carrier layer, individual layer quantum dot film is obtained, the individual layer quantum dot film is dry,
It is spare；
It is repeated in brushing the comb-shaped polymer and the quantum dot solution on the individual layer quantum dot film, be obtained after dry
Multi-layer quantum point film.
9. a kind of backlight module, including light guide plate, prismatic lens and quantum dot film, the quantum dot film is folded in the light guide plate
Between the prismatic lens, which is characterized in that the quantum dot film is the quantum dot film described in any one in claim 1-6
Or the quantum dot film prepared by claim 7 or 8.
10. a kind of display equipment, which is characterized in that including the backlight module described in claim 9.
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