CN108153058B - Quantum dot film, preparation method, backlight module and display device - Google Patents

Quantum dot film, preparation method, backlight module and display device Download PDF

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CN108153058B
CN108153058B CN201810043113.8A CN201810043113A CN108153058B CN 108153058 B CN108153058 B CN 108153058B CN 201810043113 A CN201810043113 A CN 201810043113A CN 108153058 B CN108153058 B CN 108153058B
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quantum dot
comb
dot film
polymer
quantum
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CN108153058A (en
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刘振国
宋志成
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Hisense Visual Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light

Abstract

The invention provides a quantum dot film, a preparation method of the quantum dot film, a backlight module and display equipment. The quantum dot film comprises a carrier layer formed by comb-shaped polymers and a quantum dot layer formed by quantum dots, wherein the side chains of the comb-shaped polymers are polar side chains. When the carrier layer is contacted with the quantum dot layer, the polar side chain of the comb polymer captures the quantum dot in a polar selective coordination mode, the quantum dot is automatically attached to the side chain of the comb polymer, and the binding force of the quantum dot and the side chain of the comb polymer is strong. Because the quantum dots are selected and coordinated on the side chain of the comb-shaped polymer in a polar manner, the quantum dots cannot be agglomerated when being combined with the comb-shaped polymer, the conditions of rapid red shift of the luminous wavelength and brightness attenuation of the quantum dots cannot occur in the photoluminescence process, and the problem of color cast of the barrier-free diaphragm quantum dot film cannot be caused. The setting of multilayer carrier layer can improve the water oxygen barrier effect of quantum dot membrane to abandon traditional barrier film, realize no resistant diaphragm quantum dot membrane, reduction in production cost.

Description

Quantum dot film, preparation method, backlight module and display device
Technical Field
The invention relates to the technical field of liquid crystal display, in particular to a quantum dot film, a preparation method of the quantum dot film, a backlight module and display equipment.
Background
With the continuous development of liquid crystal display technology, consumers have higher and higher requirements on the color gamut of liquid crystal display devices. In response to the color gamut requirements of consumers on liquid crystal display devices, high color gamut liquid crystal display devices are becoming mainstream products for the development of liquid crystal display technology. At present, the color gamut of the liquid crystal display device is mainly embodied by the color development of the backlight module in the liquid crystal display device, that is, the high color gamut color development is realized by the quantum dot film arranged above the diffusion plate or the light guide plate of the backlight module.
In the related art, the structure of a quantum dot film is generally as shown in fig. 1. As shown in fig. 1, the quantum dot film mainly includes a quantum dot layer a and barrier film layers b located on two sides of the quantum dot layer a. Wherein the quantum dot layer a comprises a polymer matrix and quantum dots such as CdSe, CdTe, CdS and the like dispersed in the polymer matrix; the barrier film layer b has the function of preventing the quantum dots from being contacted with water vapor and oxygen to lose efficacy. Typically, the barrier film layer b is a water oxygen barrier film, i.e. a PET (polyethylene terephthalate) film with an aluminum oxide coating or other inorganic coating on the surface. Because the quantum dot film comprises two barrier film layers b, and the cost of the barrier film layers b accounts for about 45% of the total cost of the quantum dot film, the production cost of the quantum dot film with the barrier film layers is high.
In order to reduce the production cost of the quantum dot film, the quantum dot film without the barrier diaphragm gradually becomes the main trend of the research and development of the quantum dot film. At present, the preparation method of the barrier-free diaphragm quantum dot film mainly comprises the steps of coating a layer of ligand outside quantum dots, and dispersing the coated quantum dots into a polymer matrix. However, research tests show that in the barrier-free diaphragm quantum dot film prepared by the method, water vapor and oxygen can rapidly erode the polymer matrix, so that the ligand wrapping the quantum dots is peeled off or damaged, and the quantum dots are exposed. The particle size of the quantum dots is usually in the nanometer level, so the exposed quantum dots are easy to agglomerate in the polymer matrix, which causes the quantum dots to have the conditions of rapid red shift of the light-emitting wavelength and brightness attenuation in the photoluminescence process, and further causes the problem of color cast of the barrier-free diaphragm quantum dot film, and influences the display brightness of the backlight module.
Disclosure of Invention
The invention provides a quantum dot film, a preparation method thereof, a backlight module and display equipment, and aims to solve the problem that the existing barrier-free quantum dot film generates color cast.
In a first aspect, the present invention provides a quantum dot film comprising a carrier layer composed of a comb-like polymer and a quantum dot layer composed of quantum dots, wherein side chains of the comb-like polymer are polar side chains;
the quantum dot layer is coated on the surface of the carrier layer; and the quantum dots are attached to the polar side chains.
In a second aspect, the present invention provides a method for preparing a quantum dot film, the method comprising:
preparing a comb-shaped polymer, wherein the comb-shaped polymer coating forms a carrier layer, and the carrier layer is dried and is ready for use;
dispersing the quantum dots in a polar solution to obtain a quantum dot solution;
and spraying the quantum dot solution on the carrier layer to form a quantum dot film.
In a third aspect, the present invention provides a backlight module, including a light guide plate, a prism sheet, and a quantum dot film, where the quantum dot film is sandwiched between the light guide plate and the prism sheet, and the quantum dot film is the quantum dot film of the first aspect or the quantum dot film prepared in the second aspect.
In a fourth aspect, the present invention provides a display device comprising the backlight module of the third aspect.
The technical scheme provided by the embodiment of the invention can have the following beneficial effects:
the invention provides a quantum dot film, a preparation method of the quantum dot film, a backlight module and display equipment. The quantum dot film comprises a carrier layer composed of comb-shaped polymer and a quantum dot layer composed of quantum dots, wherein the carrier layer is in contact with the quantum dot layer. When the carrier layer is contacted with the quantum dot layer, the polar side chain of the comb polymer captures the quantum dot in a polar selective coordination mode, so that the quantum dot is attached to the side chain of the comb polymer, and the binding force of the quantum dot and the side chain of the comb polymer is strong. The quantum dots are selected and coordinated on the side chain of the comb-shaped polymer in a polar manner, so that the quantum dots cannot be agglomerated when being combined with the comb-shaped polymer, the conditions of rapid red shift of the luminous wavelength and brightness attenuation of the quantum dots cannot occur in the photoluminescence process, and the problem of color cast of the barrier-free diaphragm quantum dot film cannot be caused.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
In order to more clearly explain the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious to those skilled in the art that other drawings can be obtained according to the drawings without any creative effort.
FIG. 1 is a schematic structural view of a quantum dot film according to the related art;
fig. 2 is a schematic structural diagram of a single-layer quantum dot film provided in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a comb polymer provided in an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a multilayer quantum dot film provided by an embodiment of the present invention;
fig. 5 is a schematic flow chart of a method for preparing a quantum dot film according to an embodiment of the present invention;
FIG. 6 is an SEM (scanning electron microscope) view of a commercially available quantum dot film;
FIG. 7 is an SEM inspection of CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot films provided by the embodiment of the invention.
Detailed Description
In the existing related barrier-free diaphragm quantum dot film, water vapor and oxygen can rapidly erode a polymer matrix, so that a ligand wrapping quantum dots falls off or is damaged, and the quantum dots are exposed. Since the particle size of the quantum dot is generally in the nanometer order, the exposed quantum dot is easily agglomerated in the polymer matrix. The agglomerated quantum dots lead to the narrowing of the forbidden bandwidth of the quantum dot semiconductor, so that the quantum dots have the situations of rapid red shift of the light-emitting wavelength and brightness attenuation in the photoluminescence process, and further the non-resistance diaphragm quantum dot film has the color cast problem, and the display brightness of the backlight module is influenced.
To solve the above problems, an embodiment of the present invention provides a quantum dot film, and specifically refers to fig. 2. The quantum dot film provided by the embodiment of the invention comprises a carrier layer formed by comb-shaped polymers and a quantum dot layer formed by quantum dots, wherein the side chains of the comb-shaped polymers are polar side chains. The quantum dot layer is coated on the surface of the carrier layer, and the quantum dots are attached on the polar side chains of the comb-shaped polymer.
Specifically, the quantum dots adopted in the embodiment of the invention are quantum dots with a core-shell structure, namely, a shell is wrapped outside a quantum dot core. In the embodiment of the invention, the quantum dot core is made of II-VI semiconductor material quantum dots, such as CdSe, CdTe, CdS and the like; the shell is made of ZnS and other inert inorganic materials, so that core-shell quantum dots taking CdSe, CdTe, CdS and other cores and ZnS and other inert inorganic materials as the shell, such as CdSe/ZnS and the like, are formed. The quantum dot core has a large specific surface area, so that more shell substances can be distributed outside the quantum dot core. When the outside of the quantum dot core is not completely wrapped by the shell, the lattice coordination of the quantum dot core is unsaturated, so that the surface of the quantum dot core still has the capability of coordinating with other atoms, namely, a dangling bond exists on the surface of the quantum dot core, and the quantum dot core has polarity. Because the side chain of the comb polymer is a polar side chain, in order to enable the quantum dot to be combined on the side chain of the comb polymer through a polar effect, the quantum dot provided by the embodiment of the invention has the advantage that the outside of the quantum dot core is not completely wrapped by the inert inorganic material.
In the actual preparation process of the quantum dot film, quantum dots with proper light-emitting wavelength and proper quantum dot core-shell dosage ratio are selected according to the light-emitting property of the quantum dot film to be prepared.
The comb polymer adopted by the embodiment of the invention comprises a main chain and side chains, wherein a plurality of side chains are distributed on one side or two sides of the main chain, so that the comb polymer shown in the attached figure 3 is formed. The side chain of the comb polymer contains polar groups such as hydroxyl, carboxyl and/or amino, and the like, so that the side chain of the comb polymer is presented as a polar side chain. Because the side chain of the comb polymer is a polar side chain and a dangling bond exists on the surface of the quantum dot, the side chain of the comb polymer can regularly capture the quantum dot through the polar effect, so that the quantum dot is adsorbed on the polar side chain. Research and detection show that 3-5 quantum dots are generally attached to each polar side chain, so that the dispersion of the quantum dots is realized. In addition, the quantum dots are connected with the polar side chains through the polar bonds, so that the binding force is strong, the quantum dots cannot move and aggregate on the polar side chains, and the quantum dots cannot fall off from the polar side chains. Because the quantum dots cannot move and agglomerate on the polar side chains, the quantum dot film prepared from the quantum dots and the comb-shaped polymer with the polar side chains cannot generate the situations of rapid red shift of the luminous wavelength and brightness attenuation during photoluminescence, and further cannot generate the problem of color cast of the quantum dot film.
Further, the comb-like polymer is a high polymer, and the side chains of the high polymer are easily destroyed and lose polarity under the irradiation of short-wavelength light, i.e., the comb-like polymer is in an aged state. When the comb-shaped polymer is in an aging state, the quantum dots are not adsorbed any more, so that the quantum dots are agglomerated. In order to prevent the side chain of the high polymer from aging under long-term ultraviolet illumination, the side chain of the comb polymer in the embodiment of the invention is preferably a chain segment insensitive to ultraviolet light, so that the service life of the quantum dot film is prolonged.
In the embodiment of the present invention, since the comb-shaped polymer is a substrate to which the quantum dots are attached, the quantum dot film needs to have certain stiffness and hardness. In order to make the quantum dot film have certain stiffness and hardness, the main chain of the comb-shaped polymer is preferably a rigid main chain. Meanwhile, in order to prevent the reaction between the main chain and the side chain, the rigid main chain is selected to be a non-polar chain. In the embodiment of the invention, the comb-shaped polymer is selected from comb-shaped epoxy polymer, comb-shaped polyamino acid polymer or comb-shaped polyphenyl polymer and the like. Wherein, the comb-shaped epoxy polymer is a comb-shaped polymer containing epoxy groups in a rigid main chain, such as PS-acyl-P (AM-co-GMA) comb-shaped epoxy polymer and the like. The comb-shaped polyamino acid polymer is a comb-shaped polymer with a main chain containing rigid polyamino acid chains, such as a rigid poly-gamma-3-azidopropyl-L-glutamic acid main chain and the like. The comb-shaped polyphenyl polymer is a comb-shaped polymer with a main chain comprising rigid polyphenyl and a side chain comprising polystyrene, such as FMS-EE-FA (poly (methacrylic acid-co-octadecyl methacrylate) - (ethanolamine-ethylenediamine folic acid)) and the like.
Referring to fig. 2, the quantum dot film provided by the embodiment of the invention is formed by coating quantum dots on the surface of the comb-shaped polymer, that is, the quantum dots are located on the surface of the comb-shaped polymer. Because the shell of the adopted quantum dot is made of inert inorganic material and the exposed quantum dot core of the quantum dot is combined with the polar side chain, the quantum dot is not easily influenced by the external environment, and a barrier film is not required to be coated on the outer side of the quantum dot film provided by the embodiment of the invention, the barrier-free quantum dot film is realized, and the production cost is reduced.
Further, the quantum dot film provided by the above embodiment is a single-layer barrier-free film quantum dot film, so that the number of quantum dots in the quantum dot film is limited, and the luminous intensity is not high. In order to make the quantum dot film have higher luminous intensity and structural strength, another quantum dot film provided in the embodiments of the present invention is a multilayer quantum dot film, that is, the multilayer quantum dot film includes a multilayer carrier layer and a multilayer quantum dot layer, and the carrier layer and the quantum dot layer are sequentially and repeatedly disposed to form a layered structure, please refer to fig. 4 specifically. When the quantum dot film is a multilayer quantum dot film, the substance located at the outermost layer of the quantum dot film may be the carrier layer, the quantum dot layer, or the carrier layer at one side and the quantum dot layer at the other side, and the substance at the outermost layer of the quantum dot film is set according to the practical application.
When the substance on the outermost layer of the quantum dot film is a quantum dot layer, although the inert inorganic material is not easily affected by the external environment, if the quantum dot film is placed in the external environment for a long time, the inert inorganic material is still affected, and the quantum dot core is exposed to the air. The II-VI semiconductor material quantum dot core has higher activity and is easy to be subjected to the environment, so that the exposed quantum dot core is easy to inactivate, and further the quantum dot positioned at the outermost side of the quantum dot film is ineffective. In order to avoid the problems, food-grade PET can be simultaneously pasted on two sides of the outer side of the quantum dot film so as to prevent the quantum dot core from being exposed in the air. Wherein the food-grade PET has a barrier coefficient of 100g(ml)/m2·Mpa·d。
Referring to fig. 5, fig. 5 is a schematic flow chart illustrating a method for manufacturing a quantum dot film according to an embodiment of the present invention. As can be seen from fig. 5, the preparation method of the quantum dot film provided by the embodiment of the invention includes:
s01: preparing comb-shaped polymer, forming a carrier layer by the comb-shaped polymer coating, and drying and reserving the carrier layer.
Because the selected comb polymers are different, the materials for preparing the comb polymers are different. In the preparation process of the quantum dot film provided by the embodiment of the invention, the comb-shaped polymer can be prepared by a side chain grafting mode on a polymerization main chain or a main chain polymerization mode with a side chain and the like during preparation, and the preparation mode of the comb-shaped polymer is not limited in the embodiment of the invention as long as the structure shown in the attached figure 3 can be formed.
After the comb polymer is prepared, the comb polymer coating is formed into a carrier layer, and the carrier layer is dried for standby. Wherein, the thickness of the carrier layer is set according to actual production needs. In the process of forming the carrier layer by the comb-shaped polymer coating, the comb-shaped polymer is coated on the base material, and the carrier layer is taken down from the base material for standby after being dried, or the comb-shaped polymer and the base material form the carrier layer together for standby. In the embodiment of the present invention, the substrate is selected from PET (polyethylene terephthalate), PC (Polycarbonate), PMMA (polymethyl methacrylate), PP (Polypropylene), PU (polyurethane), TPU (Thermoplastic polyurethane elastomer rubber), etc. with smooth and flexible surface.
S02: and dispersing the quantum dots in the polar solution to obtain a quantum dot solution.
The quantum dots can be prepared by themselves or obtained by purchasing and the like. And dispersing the prepared quantum dots in a polar solution to obtain a quantum dot solution. The concentration of the quantum dot solution is set according to the number of side chains of the selected comb-shaped polymer, the polarity of the side chains and the like. In addition, the polar solution selected in the embodiment of the invention comprises ethanol, n-heptane, methyl ether or tetrahydrofuran, and the like.
S03: and spraying the quantum dot solution on the carrier layer to form the quantum dot film.
And spraying the quantum dot solution on the dried carrier layer to form a quantum dot layer. The quantum dot layer is dried to form a single-layer quantum dot film comprising a carrier layer and a quantum dot layer. The thickness of the quantum dot layer formed by spraying the quantum dot solution is also set according to the actual production requirement.
And further, after the single-layer quantum dot film is dried, continuously brushing the comb-shaped polymer on the single-layer quantum dot film. And after drying the comb-shaped polymer, spraying the quantum dot solution, and repeatedly brushing and spraying in the way to obtain the multilayer layered quantum dot film. The number of layers of the carrier layer and the quantum dot layer is set according to practical application.
The following describes the preparation process of the quantum dot film by taking CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film as an example. The preparation process of the quantum dot film is only an exemplary description, and does not limit the structure of the quantum dot film provided by the embodiment of the present invention, nor the preparation process of the quantum dot film provided by the embodiment of the present invention.
The concrete preparation process of the CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film comprises the following steps:
s101: preparing comb-shaped polymer, forming a carrier layer by the comb-shaped polymer coating, and drying and reserving the carrier layer.
S1011: selecting chloroacetylated polystyrene microspheres (PS-acyl-Cl for short) with the particle size of 200-260 mu m and the Cl supporting amount of 4.63mmol/g as an initiator for preparing the PS-acyl-P (AM-co-GMA) comb-shaped epoxy polymer. Glycidyl Methacrylate (GMA) and hydrophilic Acrylamide (AM) are selected as copolymerization grafting monomers. And (2) selecting the treated cuprous chloride (CuCl) and 2,2'-Dipyridyl (2,2' -Dipyridyl, Bpy) as catalysts, wherein the cuprous chloride is repeatedly soaked in glacial acetic acid and ethanol respectively, and dried at low temperature under the protection of nitrogen after soaking to obtain the treated cuprous chloride.
S1012: the PS-acyl-P (AM-co-GMA) prepolymer with a flexible side chain is synthesized by taking a copolymerization grafting monomer as a raw material and grafting the copolymerization grafting monomer by an atom transfer radical polymerization method under the action of an initiator and a catalyst. In the process of synthesizing a PS-acyl-P (AM-co-GMA) prepolymer by adopting an atom transfer radical polymerization method, the mass ratio of PS-acyl-Cl, CuCl, Bpy, AM and GMA is 1:1:2:20: 60. The reaction equation for PS-acyl-P (AM-co-GMA) prepolymer formation is:
Figure BDA0001550080270000051
s1013: and (3) treating the prepared PS-acyl-P (AM-co-GMA) prepolymer by repeatedly vacuumizing and introducing nitrogen to remove air in the PS-acyl-P (AM-co-GMA) prepolymer.
S1014: and placing the PS-acyl-P (AM-co-GMA) prepolymer with air removed in an oil bath at the temperature of 80 ℃ for reaction for 2 hours to obtain a reactant.
S1015: after the reaction, the reaction product was washed with N-N Dimethylformamide (DMF) and water several times to neutrality, and washed with methanol 3 times to remove the excess reaction material.
S1016: and (3) drying the reactant without the reaction raw material to constant weight under the conditions that the vacuum pressure is 100-500Pa and the temperature is 30 ℃ to obtain the PS-acyl-P (AM-co-GMA) comb-shaped epoxy polymer.
S1017: PS-acyl-P (AM-co-GMA) comb epoxy polymer is coated on a PET substrate to form a PS-acyl-P (AM-co-GMA) single-layer carrier layer, and the thickness of the PS-acyl-P (AM-co-GMA) single-layer carrier layer is about 1-3 μm.
S102: and dispersing the quantum dots in the polar solution to obtain a quantum dot solution.
According to the luminescent property of the prepared quantum dot film, CdSe/ZnS or other quantum dots with proper luminescent peak wavelength are selected. And dispersing the quantum dots in an ethanol solution to form a quantum dot solution.
S103: and spraying the quantum dot solution on the carrier layer to form the quantum dot film.
And spraying the prepared quantum dot solution on a PS-acyl-P (AM-co-GMA) single-layer carrier layer, and drying to form the CdSe/ZnS/PS-acyl-P (AM-co-GMA) single-layer quantum dot film. Based on the single-layer quantum dot film, continuously coating 1-3 mu m of PS-acyl-P (AM-co-GMA) comb-shaped epoxy polymer on the single-layer quantum dot film, drying, spraying quantum dot solution, and repeating the steps for multiple times to obtain the multilayer layered quantum dot film with a certain thickness. The multilayer layered quantum dot film with the thickness of 50-100 mu m is selected. And (3) coating food-grade barrier PET on both sides of the multilayer layered quantum dot film to obtain the red shift-resistant brightness attenuation quantum dot film without the barrier diaphragm.
In the embodiment, the epoxy resin with compactness is selected as a preparation raw material, so that the prepared carrier layer can provide certain water and oxygen barrier property, and the quantum dot film with the multilayer laminated structure has stronger water and oxygen barrier property.
In order to verify that the quantum dots in the quantum dot film provided by the embodiment of the invention do not agglomerate, the embodiment of the invention takes a CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film as an example to perform SEM detection. In SEM detection, a commercially available quantum dot film is used as a comparative example, and the detection results refer to FIGS. 6 and 7. Fig. 6 shows an SEM inspection view of a quantum dot film provided by a comparative example; FIG. 7 shows an SEM inspection of a CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film provided by an embodiment of the invention. As can be seen from fig. 6, in the quantum dot film provided in the comparative example, the quantum dots are significantly agglomerated in the polymer. As can be seen from fig. 7, the CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film provided by the embodiment of the present invention has an obvious layered structure, and the CdSe/ZnS quantum dots are uniformly distributed in the PS-acyl-P (AM-co-GMA) comb-shaped epoxy polymer, and no aggregation occurs between the CdSe/ZnS quantum dots.
In the embodiment of the invention, the CdSe/ZnS/PS-acyl-P (AM-co-GMA) quantum dot film is taken as an example to detect the luminescence characteristics of the quantum dot film, namely the luminescence brightness and the peak wavelength of the quantum dot film. In the test of the luminescence property, a commercially available quantum dot film was selected as a comparative example. The specific process of the light-emitting characteristic test comprises the following steps: the quantum dot films provided by the embodiment and the comparative example are placed in an environment with the temperature of 45 ℃ and the humidity of 85 percent RH, and the blue light intensity is 100mw/cm2The blue light is irradiated circularly. The emission luminance and the peak wavelength of the quantum dot films provided by the examples and comparative examples of the present invention were measured when the irradiation time reached 0h, 100h, 500h, 1000h, 1500h, 2000h, 2500h, 3000h, and 5000h, respectively, and the specific test data refer to table 1.
Table 1: luminescence property detection data of quantum dot films provided in examples and comparative examples of the present invention
Figure BDA0001550080270000061
As can be seen from table 1, with respect to the emission luminance, as the illumination time is prolonged, the emission luminance of the quantum dot film provided by the embodiment of the present invention and the emission luminance of the quantum dot film provided by the comparative example are both reduced, but the emission luminance reduction range of the quantum dot film provided by the comparative example is much larger than that of the quantum dot film provided by the embodiment of the present invention. Therefore, the quantum dot film provided by the embodiment of the invention can provide brightness for a long time and has a long service life.
With respect to the peak wavelength, as the light irradiation time is prolonged, the peak wavelength of the quantum dot film provided by the embodiment of the invention is not changed, while the peak wavelength of the quantum dot film provided by the comparative example is obviously prolonged. It can be shown that the quantum dot film provided by the embodiment of the present invention has stable light emission characteristics.
The embodiment of the invention also provides a backlight module which comprises a light guide plate, a prism sheet and a quantum dot film arranged between the light guide plate and the prism sheet. The quantum dot film is the quantum dot film in the above embodiment. The quantum dot film provided by the embodiment of the invention has the characteristics of high excitation light efficiency and long service life, so that the backlight module can provide higher brightness and has longer service life.
The embodiment of the invention also provides display equipment which comprises the backlight module.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It is to be understood that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. The invention is not limited to the precise arrangements described above and shown in the drawings, and various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims (10)

1. A method of making a quantum dot film, the method comprising:
preparing a comb polymer, wherein the comb polymer comprises a main chain and a plurality of side chains, the side chains are distributed on two sides of the main chain and are polar side chains, coating the comb polymer to form a carrier layer, and drying the carrier layer for later use;
dispersing the quantum dots in a polar solution to obtain a quantum dot solution;
and spraying the quantum dot solution on the carrier layer to form a quantum dot film.
2. The method of claim 1, wherein the step of spraying the quantum dot solution on the carrier layer to form the quantum dot film comprises:
spraying the quantum dot solution on the carrier layer to obtain a single-layer quantum dot film, and drying the single-layer quantum dot film for later use;
sequentially repeating the following steps on the single-layer quantum dot film: brushing the comb-shaped polymer, and spraying the quantum dot solution after the comb-shaped polymer is dried;
and obtaining the multilayer quantum dot film.
3. A quantum dot film produced by the production method of claim 1, comprising a carrier layer composed of a comb-like polymer and a quantum dot layer composed of quantum dots, wherein the side chains of the comb-like polymer are polar side chains, and the polar side chains are distributed on both sides of the main chain of the comb-like polymer;
the quantum dots are attached to the polar side chains.
4. The quantum dot film of claim 3, wherein the polar groups of the polar side chains comprise hydroxyl, carboxyl, and/or amino groups.
5. The quantum dot film of claim 3, wherein the comb polymer comprises a comb epoxy polymer, a comb polyamino acid polymer, or a comb polyphenylacetylene polymer.
6. The quantum dot film of claim 5, wherein the comb-shaped epoxy polymer comprises a PS-acyl-P (AM-co-GMA) comb-shaped epoxy polymer; the backbone of the comb-like polyamino acid polymer comprises rigid polyamino acid chains; the backbone of the comb-like polyphenyl polymer comprises rigid polyphenyl, and the side chain comprises polystyrene.
7. The quantum dot film of any one of claims 3-6, wherein the quantum dot film comprises a plurality of the carrier layers and a plurality of the quantum dot layers, the carrier layers and the quantum dot layers being repeated in sequence.
8. The quantum dot film of claim 7, wherein food-grade PET is coated on the carrier layer and/or the quantum dot layer at the outermost layer.
9. A backlight module comprising a light guide plate, a prism sheet and a quantum dot film, wherein the quantum dot film is sandwiched between the light guide plate and the prism sheet, characterized in that the quantum dot film is the quantum dot film according to any one of claims 3 to 8.
10. A display device comprising the backlight module of claim 9.
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