CN108152566A - Voltage detection comparator - Google Patents
Voltage detection comparator Download PDFInfo
- Publication number
- CN108152566A CN108152566A CN201711259950.6A CN201711259950A CN108152566A CN 108152566 A CN108152566 A CN 108152566A CN 201711259950 A CN201711259950 A CN 201711259950A CN 108152566 A CN108152566 A CN 108152566A
- Authority
- CN
- China
- Prior art keywords
- switch
- semiconductor
- oxide
- metal
- connecting pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
The present invention provides a kind of voltage detection comparator, including the first adjustable resistance, second resistance, 3rd resistor, the 4th resistance, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the first bipolar transistor, the second bipolar transistor, bias current sources and switch combination circuit.When switch combination circuit is in the first connection mode, the second connection end of the first metal-oxide-semiconductor is made to be connected with the first connecting pin of the first bipolar transistor, the second connection end of the second metal-oxide-semiconductor is made to be connected with the first connecting pin of the second bipolar transistor；When switch combination circuit is in the second connection mode, the second connection end of the first metal-oxide-semiconductor is made to be connected with the first connecting pin of the second bipolar transistor, the second connection end of the second metal-oxide-semiconductor is made to be connected with the first connecting pin of the first bipolar transistor.Compared with prior art, the present invention generates the first metal-oxide-semiconductor of deviation and the position of the second metal-oxide-semiconductor by exchange, to determine effective resistance value of the first adjustable resistance, so as to reduce or eliminate influence of the input deviation to turn threshold precision.
Description
【Technical field】
The present invention relates to electronic circuit technology field, more particularly to a kind of electricity that turn threshold precision can be improved by self-regulated
Press detection comparator.
【Background technology】
There are voltage detection comparator and current sense comparators in battery protecting circuit.Voltage detection comparator be divided into for
Overcharged voltage detection comparator and overdischarge pressure detection comparator.Chip threshold value finally needs to correct, due to being wanted to overcharged voltage
Ask higher, correction is subject to overcharged voltage threshold value during trimming and is adjusted.But under different stress, it can generate different
Offset (deviation) influences the precision of chip threshold value at last.
Therefore, it is necessary to a kind of improved technical solution is provided to solve the above problems.
【Invention content】
The purpose of the present invention is to provide a kind of voltage detection comparators, and it is inclined that input can be reduced or eliminated by self-regulated
Influence of the difference to turn threshold (also referred to as reference threshold voltage or comparative threshold voltage) precision, so as to chip after making to trim and encapsulating
Turn threshold precision uniformity it is good.
To solve the above-mentioned problems, the present invention provides a kind of voltage detection comparator, including the first adjustable resistance, second
Resistance, 3rd resistor, the 4th resistance, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the first bipolar transistor, second pair
Bipolar transistor, bias current sources and switch combination circuit.Wherein, first adjustable resistance and second resistance be sequentially connected in series in
Between power end and ground terminal, the first connecting pin of the first metal-oxide-semiconductor is connected with power end, control terminal and the first bipolar transistor
First connecting pin of pipe is connected, 3rd resistor and fourth resistance of the second connection end through being sequentially connected in series of the first bipolar transistor
Ground connection, the control terminal of first bipolar transistor are connected with the connecting node between the first adjustable resistance and second resistance；
First connecting pin of second metal-oxide-semiconductor is connected with power end, and control terminal is connected with the control terminal of the first metal-oxide-semiconductor, second pair
The control terminal of bipolar transistor is connected with the control terminal of the first bipolar transistor, the second connection end of the second bipolar transistor
Connecting node between 3rd resistor and the 4th resistance is connected；First connecting pin of third metal-oxide-semiconductor is connected with power end, the
Two connecting pins are connected with the output terminal of voltage detection comparator, control terminal and the first connecting pin phase of the second bipolar transistor
Even；The input terminal of bias current sources and the output terminal of voltage detection comparator, the output terminal ground connection of bias current sources.The switch
Combinational circuit includes the first connecting pin, second connection end, third connecting pin and the 4th connecting pin, and the of the switch combination circuit
One connecting pin is connected with the second connection end of the first metal-oxide-semiconductor, the second connection end of the switch combination circuit and the second metal-oxide-semiconductor
Second connection end is connected, the third connecting pin of the switch combination circuit and the first connecting pin phase of the first bipolar transistor
Even, the 4th connecting pin of the switch combination circuit is connected with the first connecting pin of the second bipolar transistor.The switching group
It closes circuit and includes the first connection mode or the second connection mode, when the switch combination circuit is in the first connection mode, make
The second connection end of first metal-oxide-semiconductor is connected with the first connecting pin of the first bipolar transistor, makes the second of the second metal-oxide-semiconductor to connect
End is connected with the first connecting pin of the second bipolar transistor；When the switch combination circuit is in the second connection mode, make
The second connection end of first metal-oxide-semiconductor is connected with the first connecting pin of the second bipolar transistor, makes the second of the second metal-oxide-semiconductor to connect
End is connected with the first connecting pin of the first bipolar transistor.
Further, when being calibrated to voltage detection comparator, switch combination circuit is first controlled in the first connection side
Constantly replace between formula and the second connection mode, and the voltage unidirectionally changed in power end input；It is gradual with the voltage of power end
Unidirectional variation when overturning is the first logic level to the comparison result of voltage detection comparator output for the first time, locks power end
Current voltage and switch combination circuit current connection mode, make power end voltage maintain locking when current voltage, and
The currently active resistance of adjustable resistance is recorded, which is known as the first effective resistance；In locking switch combinational circuit
Current connection mode after, then switch combination circuit is made to be transformed to another connection mode by current connection mode, if voltage is examined
The comparison result overturning for surveying comparator output is the second logic level, then adjusts effective resistance value of adjustable resistance, until voltage is examined
The comparison result for surveying comparator output is overturn again as the first logic level；When voltage detection comparator output comparison result again
When secondary overturning is the first logic level, the currently active resistance of adjustable resistance is recorded, which is known as second effectively
Resistance；Effective resistance value of adjustable resistance is adjusted to the average value of the first effective resistance and the second effective resistance, and makes described open
It closes combinational circuit and is in the first connection mode or the second connection mode.
Further, the voltage detection comparator is overcharged voltage detection comparator, and the power end input is unidirectional to be become
The voltage that the voltage of change gradually rises for power end input.
Further, the switch combination circuit includes first switch, second switch, third switch and the 4th switch, institute
The one end for stating first switch is connected with the second connection end of first metal-oxide-semiconductor, the other end and first bipolar transistor
First connecting pin of pipe is connected, and one end of the second switch is connected with the second connection end of second metal-oxide-semiconductor, the other end
It is connected with the first connecting pin of second bipolar transistor, one end of third switch is connected with one end of first switch, institute
The other end for stating third switch is connected with the other end of second switch, and one end of the 4th switch is connected with one end of second switch,
The other end of 4th switch is connected with the other end of first switch, when the switch combination circuit is in the first connection mode,
First switch and second switch conducting, and third switch and third switch OFF；Connect when the switch combination circuit is in second
When connecing mode, first switch and second switch shutdown, and third switch and third switch conduction.
Further, first metal-oxide-semiconductor, the second metal-oxide-semiconductor and third metal-oxide-semiconductor are PMOS transistor, the first MOS
Pipe, the second metal-oxide-semiconductor and third metal-oxide-semiconductor the first connecting pin, second connection end and control terminal be respectively the source electrode of PMOS transistor,
Drain and gate；First bipolar transistor and the second bipolar transistor are NPN transistor, and described first is bipolar
The first connecting pin, second connection end and the control terminal of transistor npn npn and the second bipolar transistor are respectively NPN transistor
Collector, emitter-base bandgap grading and base stage.
Compared with prior art, the present invention generates the device position of deviation by exchange, finds out the low overturning reached at first
Threshold value on this basis, exchanges position and passes through the resistance value of adjustable resistance that change forms turn threshold and reach height and turn over again
Turn threshold value, the resistance value when resistance value of the adjustable resistance to be adjusted to low turn threshold and resistance value during high tumble threshold value
Average value, with achieve the effect that eliminate deviation.
【Description of the drawings】
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for this
For the those of ordinary skill of field, without having to pay creative labor, it can also be obtained according to these attached drawings other
Attached drawing.Wherein：
Fig. 1 is a kind of circuit diagram of voltage detection comparator of the prior art；
Fig. 2 is the circuit diagram of the voltage detection comparator of the present invention in one embodiment；
Fig. 3 is in circuit during the first connection mode for the switch combination circuit in voltage detection comparator shown in Fig. 2
Schematic diagram；
Fig. 4 is in circuit during the second connection mode for the switch combination circuit in voltage detection comparator shown in Fig. 2
Schematic diagram；
Fig. 5-7 is the overcharged voltage detection comparator of the present invention in one embodiment, corresponds to step in a calibration process
Circuit connection diagram.
【Specific embodiment】
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
" one embodiment " or " embodiment " referred to herein refers to may be included at least one realization method of the present invention
A particular feature, structure, or characteristic." in one embodiment " that different places occur in the present specification not refers both to same
A embodiment, nor the individual or selective embodiment mutually exclusive with other embodiment.Unless stated otherwise, herein
In connect, be connected, connecting expression be electrically connected word represent directly or indirectly to be electrical connected.
Shown in please referring to Fig.1, it is a kind of circuit diagram of voltage detection comparator of the prior art, overturns threshold
Value (also referred to as reference threshold voltage or comparative threshold voltage) is：
Wherein, VBE1 is the emitter base voltage of bipolar transistor Q1, and VBE0 is the transmitting of bipolar transistor Q0
Pole-base voltage, Re are the resistance value of resistance Re, and Rs is the resistance value of resistance Rs, and Ru is the resistance value of resistance Ru, and Rd is resistance
The resistance value of Rd.The voltage detection comparator is equal to V in input voltage VthWhen, the signal of output terminal OUT outputs can occur
Overturning.
When being mismatched due to the metal-oxide-semiconductor M0 and M1 in Fig. 1, input offset voltage Vos can be generated, this can lead to voltage detecting
The turn threshold of comparator generates corresponding deviation, and therefore, the present invention improves existing voltage detection comparator, makes
It is of the invention in voltage detection comparator influence of the input deviation to turn threshold precision can be reduced or eliminated by self-regulated.
It is the circuit diagram of the voltage detection comparator of the present invention in one embodiment shown in please referring to Fig.2,
It is with the main distinction of voltage detection comparator shown in FIG. 1：Resistance Ru in Fig. 2 is adjustable resistance, and Fig. 2 is additionally arranged switch
Combinational circuit 210 can exchange the position of metal-oxide-semiconductor M0 and M1 in circuit.Voltage source Vos in Fig. 2 is mismatched for device
The input offset voltage Vos generated when (for example, metal-oxide-semiconductor M0 and M1 are mismatched), belongs to stray voltage source, input imbalance electricity
The anode of pressure Vos is connected with the control terminal of metal-oxide-semiconductor M0, and cathode is connected with the control terminal of metal-oxide-semiconductor M1, in other embodiments,
Can also be that the cathode of input offset voltage Vos is connected with the control terminal of metal-oxide-semiconductor M0, the control terminal phase of anode and metal-oxide-semiconductor M1
Even, this is mainly determined by the unmatched concrete condition of device.
Specifically, voltage detection comparator shown in Fig. 2 includes the first adjustable resistance Ru, second resistance Rd, 3rd resistor
It is Re, the 4th resistance Rs, the first metal-oxide-semiconductor M0, the second metal-oxide-semiconductor M1, third metal-oxide-semiconductor M2, the first bipolar transistor Q0, second bipolar
Transistor npn npn Q1, bias current sources Ibias and switch combination circuit 210.
In Fig. 2, the first adjustable resistance Ru and second resistance Rd are sequentially connected in series between power end V and ground terminal G, the
The first connecting pin of one metal-oxide-semiconductor M0 is connected with power end V, control terminal and the first connecting pin phase of the first bipolar transistor Q0
Even, 3rd resistor Re and fourth resistance Rs ground connection of the second connection end of the first bipolar transistor Q0 through being sequentially connected in series, it is described
Connecting node between the control terminal of first bipolar transistor Q0 and the first adjustable resistance Ru and second resistance Rd is connected；It is described
The first connecting pin of second metal-oxide-semiconductor M1 is connected with power end V, and control terminal is connected with the control terminal of the first metal-oxide-semiconductor M0, second pair
The control terminal of bipolar transistor Q1 is connected with the control terminal of the first bipolar transistor Q0, and the second of the second bipolar transistor Q1
Connecting node between connecting pin and 3rd resistor Re and the 4th resistance Rs is connected；The first connecting pin of third metal-oxide-semiconductor M2 and electricity
Source V is connected, and second connection end is connected with the output terminal OUT of voltage detection comparator, control terminal and the second ambipolar crystalline substance
The first connecting pin of body pipe Q1 is connected；The input terminal of bias current sources Ibias and the output terminal OUT of voltage detection comparator, partially
Put the output terminal ground connection of current source Ibias.
The switch combination circuit 210 includes the first connecting pin, second connection end, third connecting pin and the 4th connecting pin,
First connecting pin of the switch combination circuit is connected with the second connection end of the first metal-oxide-semiconductor M0, the switch combination circuit
Second connection end is connected with the second connection end of the second metal-oxide-semiconductor M1, the third connecting pin of the switch combination circuit with first pair
The first connecting pin of bipolar transistor Q0 is connected, the 4th connecting pin and the second bipolar transistor Q1 of the switch combination circuit
The first connecting pin be connected, the switch combination circuit 210 include the first connection mode or the second connection mode, when the switch
When combinational circuit 210 is in the first connection mode, make the second connection end of the first metal-oxide-semiconductor M0 with the first bipolar transistor Q0's
First connecting pin is connected, and the second connection end of the second metal-oxide-semiconductor M1 is made to be connected with the first connecting pin of the second bipolar transistor Q1；
When the switch combination circuit 210 is in the second connection mode, make the second connection end of the first metal-oxide-semiconductor M0 and second ambipolar
The first connecting pin of transistor Q1 is connected, and makes the second connection end and the first of the first bipolar transistor Q0 of the second metal-oxide-semiconductor M1
Connecting pin is connected.
In specific embodiment shown in Fig. 2, the switch combination circuit 210 include first switch S0, second switch S1,
Third switchs the switches of S2 and the 4th S3.Wherein, one end of the first switch S0 and the second connection end of the first metal-oxide-semiconductor M0
Be connected, the other end is connected with the first connecting pin of the first bipolar transistor Q0, one end of the second switch S1 and
The second connection end of the second metal-oxide-semiconductor M1 is connected, the first connecting pin of the other end and the second bipolar transistor Q1
It is connected, one end of third switch S2 is connected with one end of first switch S0, the other end and second switch of the third switch S2
The other end of S1 is connected, and one end of the 4th switch S3 is connected with one end of second switch S1, and the 4th switchs the other end of S3 and the
The other end of one switch S0 is connected.When the switch combination circuit 210 is in the first connection mode, first switch S0 and second
S1 conductings, and third switch S2 and third switch S4 shutdowns are switched, so as to make the second connection end of the first metal-oxide-semiconductor M0 and first pair
The first connecting pin of bipolar transistor Q0 is connected, and makes the second connection end of the second metal-oxide-semiconductor M1 with the second bipolar transistor Q1's
First connecting pin is connected, and specifically refers to attached drawing 3；When the switch combination circuit 210 is in the second connection mode, first opens
S0 and second switch S1 shutdowns, and third switch S2 and third switch S3 conductings are closed, so as to make the second of the first metal-oxide-semiconductor M0 the connection
End is connected with the first connecting pin of the second bipolar transistor Q1, makes the second connection end of the second metal-oxide-semiconductor M1 and first ambipolar
The first connecting pin of transistor Q0 is connected, and specifically refers to attached drawing 4.
Below based on Fig. 2-7, the specific calibration process for introducing the voltage detection comparator in the present invention.
Assuming that during Vos=0, the turn threshold of voltage detection comparator is Vth；Actually Vos is not equal to 0, it is therefore assumed that
Shown in Fig. 3 during connection, turn threshold Vth+, and (Vth+) ＞ Vth；Assuming that shown in Fig. 4 during connection, turn threshold is
Vth-, and (Vth-) ＜ Vth, then be tied to form just like ShiShimonoseki it is vertical, i.e.,:
(1) by Fig. 2 for overcharged voltage detection comparator, specifically to introduce its calibration process.
Wherein, Fig. 5-7 is the circuit of the correspondence step of overcharged voltage detection comparator in a calibration process in the present invention
Connection diagram.
First, control switch combination circuit 210 constantly replaces between the first connection mode and the second connection mode, and in electricity
The voltage that source V inputs gradually rise.
As the voltage of power end V is gradually risen to V=Vth-, switch combination circuit 210 is in shown in fig. 5 second and connects
When connecing mode, (it can be described as for high level for the comparison result overturning for the first time of the output terminal OUT of voltage detection comparator output
One logic level), at this point, the current voltage of power end V and current connection mode (i.e. Fig. 5 of switch combination circuit 210 need to be locked
The second shown connection mode) so that the voltage of power end V maintains current voltage during locking, and records the first adjustable resistance
The currently active resistance of Ru, the current effective resistance are known as the first effective resistance, the first effective resistance Ru+ in Fig. 5, such as should
First effective resistance Ru+ can be the maximum resistance value of the first adjustable resistance Ru.
After the current connection mode (the second connection mode i.e. shown in fig. 5) for locking the switch combination circuit 210, then
The switch combination circuit 210 is made to be transformed to another connection mode by current connection mode, (the second company i.e. as shown in Figure 5
Mode conversion is connect as the first connection mode shown in fig. 6), due to comparator turn threshold (Vth+) ＞ of this connection mode
(Vth-), the comparison result of the output terminal OUT outputs of voltage detection comparator can overturn that (it can be described as the second logic for low level
Level).Effective resistance value of the first adjustable resistance Ru need to be reduced, until the comparison that the output terminal OUT of voltage detection comparator is exported
As a result overturning records the currently active of adjustable resistance Ru until high level (it can be described as the first logic level), to need at this time again
Resistance, the current effective resistance are known as the second effective resistance, and the second effective resistance in Fig. 6 is Ru-, wherein (Ru-)=(Ru
+)-(R_trim1)-(R_trim2), and (R_trim1)=(R_trim2), (R_trim1)+(R_trim2) reduce for this
The first adjustable resistance resistance value.
(Vth+) difference of-(Vth-), which is equivalent to, to be fallen on (R_trim1)+(R_trim2) voltages subtracted in Ru+.Cause：
Ru+ is subtracted：Comparator turn threshold afterwards i.e. etc.
Turn threshold when imitating as Vos=0.
It is effectively hindered as shown in fig. 7, effective resistance value of the first adjustable resistance Ru is adjusted to first effective resistance value Ru+ and second
The average value of value Ru-.In this manner it is possible to reduce or eliminate influence of the input deviation to turn threshold precision, so as to making to trim and
Chip threshold accuracy uniformity is good after encapsulation.
(2) by taking Fig. 2 presses detection comparator for overdischarge as an example, its calibration process is specifically introduced.
First, control switch combination circuit 210 constantly replaces between the first connection mode and the second connection mode, and in electricity
The voltage that source V inputs continuously decrease.
As the voltage of power end V is gradually decrease to V=Vth+, when switch combination circuit 210 is in the first connection mode,
For low level, (it can be described as the first logic electricity for the comparison result overturning for the first time of the output terminal OUT outputs of voltage detection comparator
It is flat), at this point, the current voltage of power end V and current connection mode (i.e. the first connection side of switch combination circuit 210 need to be locked
Formula) so that the voltage of power end V persistently maintains current voltage during locking, and records the currently active of the first adjustable resistance Ru
Resistance, the current effective resistance are known as the first effective resistance Ru1.
After the current connection mode (i.e. the first connection mode) for locking the switch combination circuit 210, then make described open
It closes combinational circuit 210 and another middle connection mode is transformed to by current connection mode, i.e., the second company is transformed to by the first connection mode
Mode is connect, due to comparator turn threshold (Vth-) ＜ (Vth+) of this connection mode, the output terminal OUT of voltage detection comparator
The comparison result of output can be overturn as high level (it can be described as the second logic level).The effective of the first adjustable resistance Ru need to be increased
Resistance value, until the comparison result that the output terminal OUT of voltage detection comparator is exported is overturn again, for low level, (it can be described as first
Logic level) until, the currently active resistance of record adjustable resistance Ru is needed at this time, and it is effectively electric which is known as second
Hinder Ru2.Effective resistance value of adjustable resistance Ru is adjusted to the average value of the first effective resistance Ru1 and the second effective resistance Ru2.This
Sample can also reduce or eliminate influence of the input deviation to turn threshold precision, so as to chip threshold value essence after making to trim and encapsulating
It is good to spend uniformity.
It should be noted that the switch combination circuit 210 can also use other control circuit knots of the prior art
Structure, as long as it can realize the aforementioned function of switch combination circuit 210, for example, two single-pole double-throw switch (SPDT)s may be used
Open the switch S0~S3 replaced in Fig. 2.
In the specific embodiment shown in Fig. 1-7, the first metal-oxide-semiconductor M0, the second metal-oxide-semiconductor M1 and third metal-oxide-semiconductor M2 are equal
For PMOS transistor, the first connecting pin, the second connection end of the first metal-oxide-semiconductor M0, the second metal-oxide-semiconductor M1 and third metal-oxide-semiconductor M2
It is respectively source electrode, the drain and gate of PMOS transistor with control terminal；The first bipolar transistor Q0 and second is ambipolar
Transistor Q1 is NPN transistor, the first connection of the first bipolar transistor Q0 and the second bipolar transistor Q1
End, second connection end and control terminal are respectively the collector, emitter-base bandgap grading and base stage of NPN transistor.
In the present invention, the word that the expressions such as " connection ", connected, " company ", " connecing " are electrical connected, unless otherwise instructed, then
Represent direct or indirect electric connection.
It should be pointed out that any change that one skilled in the art does the specific embodiment of the present invention
All without departing from the range of claims of the present invention.Correspondingly, the scope of the claims of the invention is also not merely limited to
In previous embodiment.
Claims (5)
1. a kind of voltage detection comparator, which is characterized in that it includes the first adjustable resistance, second resistance, 3rd resistor, the 4th
Resistance, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the first bipolar transistor, the second bipolar transistor, bias current
Source and switch combination circuit,
Wherein, first adjustable resistance and second resistance are sequentially connected in series between power end and ground terminal, and the of the first metal-oxide-semiconductor
One connecting pin is connected with power end, and control terminal is connected with the first connecting pin of the first bipolar transistor, the first ambipolar crystalline substance
3rd resistor and fourth resistance eutral grounding of the second connection end of body pipe through being sequentially connected in series, the control of first bipolar transistor
End is connected with the connecting node between the first adjustable resistance and second resistance；First connecting pin of second metal-oxide-semiconductor and power supply
End is connected, and control terminal is connected with the control terminal of the first metal-oxide-semiconductor, the control terminal of the second bipolar transistor and the first ambipolar crystalline substance
The control terminal of body pipe is connected, the connection section between the second connection end and 3rd resistor of the second bipolar transistor and the 4th resistance
Point is connected；First connecting pin of third metal-oxide-semiconductor is connected with power end, the output terminal of second connection end and voltage detection comparator
It is connected, control terminal is connected with the first connecting pin of the second bipolar transistor；The input terminal and voltage detecting of bias current sources
The output terminal of comparator, the output terminal ground connection of bias current sources,
The switch combination circuit includes the first connecting pin, second connection end, third connecting pin and the 4th connecting pin, the switch
First connecting pin of combinational circuit is connected with the second connection end of the first metal-oxide-semiconductor, the second connection end of the switch combination circuit
It is connected with the second connection end of the second metal-oxide-semiconductor, third connecting pin and the first bipolar transistor of the switch combination circuit
First connecting pin is connected, the 4th connecting pin of the switch combination circuit and the first connecting pin phase of the second bipolar transistor
Even,
The switch combination circuit includes the first connection mode or the second connection mode, when the switch combination circuit is in first
During connection mode, the second connection end of the first metal-oxide-semiconductor is made to be connected with the first connecting pin of the first bipolar transistor, makes second
The second connection end of metal-oxide-semiconductor is connected with the first connecting pin of the second bipolar transistor；When the switch combination circuit is in the
During two connection modes, the second connection end of the first metal-oxide-semiconductor is made to be connected with the first connecting pin of the second bipolar transistor, makes second
The second connection end of metal-oxide-semiconductor is connected with the first connecting pin of the first bipolar transistor.
2. voltage detection comparator according to claim 1, which is characterized in that
When being calibrated to voltage detection comparator, switch combination circuit is first controlled in the first connection mode and the second connection side
Constantly replace between formula, and the voltage unidirectionally changed in power end input；
Gradually unidirectionally change with the voltage of power end, when the comparison result overturning for the first time of voltage detection comparator output is the
During one logic level, the current voltage of power end and the current connection mode of switch combination circuit are locked, makes the voltage of power end
Current voltage during locking is maintained, and records the currently active resistance of adjustable resistance, which is known as first effectively
Resistance；
After the current connection mode of locking switch combinational circuit, then switch combination circuit is made to be transformed to separately by current connection mode
A kind of connection mode if the comparison result overturning of voltage detection comparator output is the second logic level, adjusts adjustable resistance
Effective resistance value, until voltage detection comparator output comparison result overturn again as the first logic level；
When the comparison result of voltage detection comparator output is overturn again as the first logic level, the current of adjustable resistance is recorded
Effective resistance, the current effective resistance are known as the second effective resistance；
Effective resistance value of adjustable resistance is adjusted to the average value of the first effective resistance and the second effective resistance, and make the switch
Combinational circuit is in the first connection mode or the second connection mode.
3. voltage detection comparator according to claim 2, which is characterized in that the voltage detection comparator is overcharge
Press detection comparator,
The voltage that the voltage that the power end input unidirectionally changes gradually rises for power end input.
4. voltage detection comparator according to claim 1, which is characterized in that the switch combination circuit is opened including first
Pass, second switch, third switch and the 4th switch,
One end of the first switch is connected with the second connection end of first metal-oxide-semiconductor, the other end and described first bipolar
First connecting pin of transistor npn npn is connected, and one end of the second switch is connected with the second connection end of second metal-oxide-semiconductor,
The other end is connected with the first connecting pin of second bipolar transistor, one end of third switch and one end phase of first switch
Even, the other end of the third switch is connected with the other end of second switch, one end of the 4th switch and one end of second switch
It is connected, the other end of the 4th switch is connected with the other end of first switch,
When the switch combination circuit is in the first connection mode, first switch and second switch conducting, and third switch and
Third switch OFF；
When the switch combination circuit is in the second connection mode, first switch and second switch shutdown, and third switch and
Third switch conduction.
5. voltage detection comparator according to claim 1, which is characterized in that
First metal-oxide-semiconductor, the second metal-oxide-semiconductor and third metal-oxide-semiconductor are PMOS transistor, first metal-oxide-semiconductor, the second metal-oxide-semiconductor
The first connecting pin, second connection end and control terminal with third metal-oxide-semiconductor are respectively the source electrode of PMOS transistor, drain and gate；
First bipolar transistor and the second bipolar transistor are NPN transistor, first bipolar transistor
Pipe and the second bipolar transistor the first connecting pin, second connection end and control terminal be respectively NPN transistor collector,
Emitter-base bandgap grading and base stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711259950.6A CN108152566B (en) | 2017-12-04 | 2017-12-04 | Voltage detection comparator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711259950.6A CN108152566B (en) | 2017-12-04 | 2017-12-04 | Voltage detection comparator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108152566A true CN108152566A (en) | 2018-06-12 |
| CN108152566B CN108152566B (en) | 2020-04-07 |
Family
ID=62466628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711259950.6A Active CN108152566B (en) | 2017-12-04 | 2017-12-04 | Voltage detection comparator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108152566B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101557215A (en) * | 2008-07-07 | 2009-10-14 | 西安民展微电子有限公司 | Voltage comparator |
| US20120323508A1 (en) * | 2011-06-16 | 2012-12-20 | Freescale Semiconductor, Inc. | Low voltage detector |
| CN105467193A (en) * | 2015-12-25 | 2016-04-06 | 无锡中感微电子股份有限公司 | Voltage detection circuit |
| CN205540381U (en) * | 2016-02-02 | 2016-08-31 | 厦门新页微电子技术有限公司 | Accurate excess temperature protection circuit of current feedback formula |
| CN107332517A (en) * | 2017-06-21 | 2017-11-07 | 成都嘉纳海威科技有限责任公司 | A kind of High Linear broadband based on gain compensation technology stacks low-noise amplifier |
-
2017
- 2017-12-04 CN CN201711259950.6A patent/CN108152566B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101557215A (en) * | 2008-07-07 | 2009-10-14 | 西安民展微电子有限公司 | Voltage comparator |
| US20120323508A1 (en) * | 2011-06-16 | 2012-12-20 | Freescale Semiconductor, Inc. | Low voltage detector |
| CN105467193A (en) * | 2015-12-25 | 2016-04-06 | 无锡中感微电子股份有限公司 | Voltage detection circuit |
| CN205540381U (en) * | 2016-02-02 | 2016-08-31 | 厦门新页微电子技术有限公司 | Accurate excess temperature protection circuit of current feedback formula |
| CN107332517A (en) * | 2017-06-21 | 2017-11-07 | 成都嘉纳海威科技有限责任公司 | A kind of High Linear broadband based on gain compensation technology stacks low-noise amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108152566B (en) | 2020-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105098872B (en) | Charge-discharge control circuit and cell apparatus | |
| JP2014137272A (en) | Voltage monitoring device | |
| JP2016539319A (en) | Energy storage device | |
| CN107968383B (en) | Battery protection system | |
| KR101496648B1 (en) | Autonomous battery balancing | |
| CN107229301A (en) | Voltage regulator | |
| CN105466460B (en) | The circuit temperature drift compensating system and method for biosensor | |
| US20100096930A1 (en) | Electrical Voltage Supply | |
| CN108152566A (en) | Voltage detection comparator | |
| CN207502686U (en) | Relay diagnostic circuit and battery management system | |
| CN204008746U (en) | A kind of novel constant voltage electronic load instrument | |
| KR20210069013A (en) | Detection circuit, ECG detection device and wearable device | |
| US11614466B2 (en) | Detection circuit for a nerve stimulator | |
| CN210347751U (en) | Current stepping measuring circuit | |
| CN111983316B (en) | ISO detection method and device | |
| CN204575715U (en) | Bridge diagram | |
| CN106406407A (en) | Multi-range high-accuracy constant current source | |
| CN101754539A (en) | Sampling circuit, LED drive circuit and method for detecting electric quantity of battery | |
| CN212391588U (en) | Resistance adjustment circuit, reference resistance network and battery management system | |
| CN206237188U (en) | Ldo circuit | |
| CN219085102U (en) | Detection gating module, battery management system and battery management chip | |
| CN217332610U (en) | Voltage detection circuit, battery protection circuit and system | |
| CN220455426U (en) | Resistance detection circuit for heating wire of electronic cigarette | |
| CN218412837U (en) | Battery voltage detection circuit with switch compensation current | |
| CN218549498U (en) | Overcurrent detection module, battery protection circuit and system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |