CN107968383B - Battery protection system - Google Patents
Battery protection system Download PDFInfo
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- CN107968383B CN107968383B CN201711256068.6A CN201711256068A CN107968383B CN 107968383 B CN107968383 B CN 107968383B CN 201711256068 A CN201711256068 A CN 201711256068A CN 107968383 B CN107968383 B CN 107968383B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/18—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
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Abstract
The present invention provides a kind of battery protection system comprising: positive power source terminal, negative power end, battery pack, battery protecting circuit and charge and discharge switch combination.The battery protecting circuit includes voltage detection comparator, and whether the voltage for being used to detect third test side is more than or less than reference threshold voltage.The voltage detection comparator includes the first adjustable resistance Ru, second resistance Rd, 3rd resistor Re, the 4th resistance Rs, the first metal-oxide-semiconductor M0, the second metal-oxide-semiconductor M1, third metal-oxide-semiconductor M2, the first bipolar junction transistor Q0, the second bipolar junction transistor Q1, bias current sources Ibias and switch combination circuit.The voltage detection comparator can reduce or eliminate influence of the input deviation to reference threshold voltage accuracy by self-regulated, to keep the turn threshold precision uniformity of chip after trimming and encapsulating good, and then improve the accuracy of the battery protection system.
Description
[technical field]
The present invention relates to electronic circuit technology field, in particular to a kind of battery protection system.
[background technique]
There are voltage detection comparator and current sense comparators in battery protecting circuit.Voltage detection comparator is divided into again
Overcharged voltage detection comparator and over-discharge voltage detection comparator.Chip threshold value finally needs to correct, due to wanting to overcharged voltage
Ask higher, correction is subject to overcharged voltage threshold value during trimming and is adjusted.But under different stress, it can generate different
Offset (deviation) influences the precision of chip threshold value at last.
Therefore, it is necessary to provide a kind of improved technical solution to solve the above problems.
[summary of the invention]
The purpose of the present invention is to provide a kind of battery protection systems can with improved voltage detection comparator
To reduce or eliminate input deviation to turn threshold (also referred to as reference threshold voltage or comparative threshold voltage) precision by self-regulated
It influences, to keep the turn threshold precision uniformity of chip after trimming and encapsulating good, and then improves the battery protection system
Accuracy.
To solve the above-mentioned problems, the present invention provides a kind of battery protection system comprising: positive power source terminal；Negative power end；
Battery pack, anode are connected with positive power source terminal；Battery protecting circuit, the positive phase at the first power detecting end and the battery pack
Even, second source test side is connected with the cathode of the battery pack, and third power detecting end is connected with the negative power end；
Charge and discharge switch combination, is connected between the cathode and negative power end of the battery pack, the first control terminal and the battery
The discharge control terminal of circuit is protected to be connected, the second control terminal is connected with the charge control end of the battery protecting circuit；It is described
Battery protecting circuit includes voltage detection comparator, and whether the voltage for being used to detect third test side is more than or less than with reference to threshold
Threshold voltage.Voltage detection comparator includes the first adjustable resistance Ru, second resistance Rd, 3rd resistor Re, the 4th resistance Rs, first
Metal-oxide-semiconductor M0, the second metal-oxide-semiconductor M1, third metal-oxide-semiconductor M2, the first bipolar junction transistor Q0, the second bipolar junction transistor Q1, biased electrical
Stream source Ibias and switch combination circuit, wherein the first adjustable resistance Ru and second resistance Rd are sequentially connected in series in third power supply
Between test side and ground terminal G, the first connecting pin of the first metal-oxide-semiconductor M0 is connected with third power detecting end, control terminal and the
The first connecting pin of one bipolar junction transistor Q0 is connected, the second connection end of the first bipolar junction transistor Q0 through being sequentially connected in series the
Three resistance Re and the 4th resistance Rs ground connection, the control terminal and the first adjustable resistance Ru and second of the first bipolar junction transistor Q0
Connecting node between resistance Rd is connected；The first connecting pin of the second metal-oxide-semiconductor M1 is connected with third power detecting end, control
End processed is connected with the control terminal of the first metal-oxide-semiconductor M0, the control terminal of the second bipolar junction transistor Q1 and the first bipolar junction transistor Q0
Control terminal be connected, the connection between the second connection end and 3rd resistor Re and the 4th resistance Rs of the second bipolar junction transistor Q1
Node is connected；The first connecting pin of third metal-oxide-semiconductor M2 is connected with third power detecting end, second connection end and voltage detecting ratio
Output end OUT compared with device is connected, and control terminal is connected with the first connecting pin of the second bipolar junction transistor Q1；Bias current sources
The input terminal of Ibias and the output end OUT of voltage detection comparator, the output end ground connection of bias current sources Ibias, the switch
Combinational circuit includes the first connecting pin, second connection end, third connecting pin and the 4th connecting pin, and the of the switch combination circuit
One connecting pin is connected with the second connection end of the first metal-oxide-semiconductor M0, the second connection end of the switch combination circuit and the second metal-oxide-semiconductor
The second connection end of M1 is connected, and the third connecting pin of the switch combination circuit is connect with the first of the first bipolar junction transistor Q0
End is connected, and the 4th connecting pin of the switch combination circuit is connected with the first connecting pin of the second bipolar junction transistor Q1, described
Switch combination circuit includes the first connection type or the second connection type, when the switch combination circuit is in the first connection type
When, so that the second connection end of the first metal-oxide-semiconductor M0 and the first connecting pin of the first bipolar junction transistor Q0 is connected, makes the second metal-oxide-semiconductor
The second connection end of M1 is connected with the first connecting pin of the second bipolar junction transistor Q1；When the switch combination circuit is in second
When connection type, the second connection end of the first metal-oxide-semiconductor M0 and the first connecting pin of the second bipolar junction transistor Q1 is made to be connected, makes
The second connection end of two metal-oxide-semiconductor M1 is connected with the first connecting pin of the first bipolar junction transistor Q0.
Compared with prior art, the present invention generates the device position of deviation by exchange, finds out the low overturning reached at first
Threshold value exchanges position again and the resistance value by changing the adjustable resistance for forming turn threshold reaches height and turns on this basis
Turn threshold value, resistance value when resistance value and high tumble threshold value when the resistance value of the adjustable resistance to be adjusted to low turn threshold
Average value, with achieve the effect that eliminate deviation.Due to using such improved voltage detection comparator, the electricity is improved
The accuracy of pond protection system.
[Detailed description of the invention]
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill of field, without any creative labor, it can also be obtained according to these attached drawings other
Attached drawing.Wherein:
Fig. 1 is a kind of circuit diagram of voltage detection comparator in the prior art；
Fig. 2 is the circuit diagram of the voltage detection comparator of the present invention in one embodiment；
Fig. 3 is in circuit when the first connection type for the switch combination circuit in voltage detection comparator shown in Fig. 2
Schematic diagram；
Fig. 4 is in circuit when the second connection type for the switch combination circuit in voltage detection comparator shown in Fig. 2
Schematic diagram；
Fig. 5-7 is the overcharged voltage detection comparator of the present invention in one embodiment, corresponds to step in a calibration process
Circuit connection diagram；
Fig. 8 is the circuit structure diagram of the battery protection system of the present invention in one embodiment.
[specific embodiment]
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
" one embodiment " or " embodiment " referred to herein, which refers to, may be included at least one implementation of the invention
A particular feature, structure, or characteristic." in one embodiment " that different places occur in the present specification not refers both to same
A embodiment, nor the individual or selective embodiment mutually exclusive with other embodiments.Unless stated otherwise, herein
In connection, be connected, connect expression be electrically connected word indicate directly or indirectly to be electrical connected.
It please refers to shown in Fig. 1, is a kind of circuit diagram of voltage detection comparator in the prior art, overturns threshold
It is worth (also referred to as reference threshold voltage or comparative threshold voltage) are as follows:
Wherein, VBE1 is the emitter base voltage of bipolar junction transistor Q1, and VBE0 is the transmitting of bipolar junction transistor Q0
Pole-base voltage, Re are the resistance value of resistance Re, and Rs is the resistance value of resistance Rs, and Ru is the resistance value of resistance Ru, and Rd is resistance
The resistance value of Rd.The voltage detection comparator is equal to V in input voltage VthWhen, the signal of output end OUT output can occur
Overturning.
When mismatching due to the metal-oxide-semiconductor M0 and M1 in Fig. 1, input offset voltage Vos can be generated, this will lead to voltage detecting
The turn threshold of comparator generates corresponding deviation, and therefore, the present invention improves existing voltage detection comparator, makes
The voltage detection comparator obtained in of the invention can reduce or eliminate influence of the input deviation to turn threshold precision by self-regulated.
It please refers to shown in Fig. 2, is the circuit diagram of the voltage detection comparator of the present invention in one embodiment,
Be with the main distinction of voltage detection comparator shown in FIG. 1: the resistance Ru in Fig. 2 is adjustable resistance, and Fig. 2 is additionally arranged switch
Combinational circuit 210 can exchange the position of metal-oxide-semiconductor M0 and M1 in circuit.Voltage source Vos in Fig. 2 is device mismatch
The input offset voltage Vos generated when (for example, metal-oxide-semiconductor M0 and M1 are mismatched), belongs to stray voltage source, input imbalance electricity
The anode of pressure Vos is connected with the control terminal of metal-oxide-semiconductor M0, and cathode is connected with the control terminal of metal-oxide-semiconductor M1, in other embodiments,
The cathode for being also possible to input offset voltage Vos is connected with the control terminal of metal-oxide-semiconductor M0, the control terminal phase of anode and metal-oxide-semiconductor M1
Even, this is mainly determined by the unmatched concrete condition of device.
Specifically, voltage detection comparator shown in Fig. 2 includes the first adjustable resistance Ru, second resistance Rd, 3rd resistor
It is Re, the 4th resistance Rs, the first metal-oxide-semiconductor M0, the second metal-oxide-semiconductor M1, third metal-oxide-semiconductor M2, the first bipolar junction transistor Q0, second bipolar
Transistor npn npn Q1, bias current sources Ibias and switch combination circuit 210.
In Fig. 2, the first adjustable resistance Ru and second resistance Rd are sequentially connected in series between power end V and ground terminal G, the
The first connecting pin of one metal-oxide-semiconductor M0 is connected with power end V, the first connecting pin phase of control terminal and the first bipolar junction transistor Q0
Even, 3rd resistor Re and fourth resistance Rs ground connection of the second connection end of the first bipolar junction transistor Q0 through being sequentially connected in series, it is described
Connecting node between the control terminal of first bipolar junction transistor Q0 and the first adjustable resistance Ru and second resistance Rd is connected；It is described
The first connecting pin of second metal-oxide-semiconductor M1 is connected with power end V, and control terminal is connected with the control terminal of the first metal-oxide-semiconductor M0, and second pair
The control terminal of bipolar transistor Q1 is connected with the control terminal of the first bipolar junction transistor Q0, and the second of the second bipolar junction transistor Q1
Connecting node between connecting pin and 3rd resistor Re and the 4th resistance Rs is connected；The first connecting pin of third metal-oxide-semiconductor M2 and electricity
Source V is connected, and second connection end is connected with the output end OUT of voltage detection comparator, control terminal and the second ambipolar crystalline substance
The first connecting pin of body pipe Q1 is connected；The input terminal of bias current sources Ibias and the output end OUT of voltage detection comparator, partially
Set the output end ground connection of current source Ibias.
The switch combination circuit 210 includes the first connecting pin, second connection end, third connecting pin and the 4th connecting pin,
First connecting pin of the switch combination circuit is connected with the second connection end of the first metal-oxide-semiconductor M0, the switch combination circuit
Second connection end is connected with the second connection end of the second metal-oxide-semiconductor M1, the third connecting pin of the switch combination circuit with first pair
The first connecting pin of bipolar transistor Q0 is connected, the 4th connecting pin of the switch combination circuit and the second bipolar junction transistor Q1
The first connecting pin be connected, the switch combination circuit 210 include the first connection type or the second connection type, when the switch
When combinational circuit 210 is in the first connection type, make the second connection end of the first metal-oxide-semiconductor M0 and the first bipolar junction transistor Q0's
First connecting pin is connected, and the second connection end of the second metal-oxide-semiconductor M1 and the first connecting pin of the second bipolar junction transistor Q1 is made to be connected；
When the switch combination circuit 210 is in the second connection type, make the second connection end of the first metal-oxide-semiconductor M0 and second ambipolar
The first connecting pin of transistor Q1 is connected, and makes the first of the second connection end of the second metal-oxide-semiconductor M1 and the first bipolar junction transistor Q0
Connecting pin is connected.
In specific embodiment shown in Fig. 2, the switch combination circuit 210 include first switch S0, second switch S1,
Third switch S2 and the 4th switch S3.Wherein, the second connection end of one end of the first switch S0 and the first metal-oxide-semiconductor M0
Be connected, the other end is connected with the first connecting pin of the first bipolar junction transistor Q0, one end of the second switch S1 and
The second connection end of the second metal-oxide-semiconductor M1 is connected, the first connecting pin of the other end and the second bipolar junction transistor Q1
It is connected, one end of third switch S2 is connected with one end of first switch S0, the other end and second switch of the third switch S2
The other end of S1 is connected, and one end of the 4th switch S3 is connected with one end of second switch S1, the other end of the 4th switch S3 and the
The other end of one switch S0 is connected.When the switch combination circuit 210 is in the first connection type, first switch S0 and second
Switch S1 conducting, and third switch S2 and third switch S4 shutdown, to make the second connection end of the first metal-oxide-semiconductor M0 and first pair
The first connecting pin of bipolar transistor Q0 is connected, and makes the second connection end of the second metal-oxide-semiconductor M1 and the second bipolar junction transistor Q1's
First connecting pin is connected, and specifically refers to attached drawing 3；When the switch combination circuit 210 is in the second connection type, first is opened
S0 and second switch S1 shutdown, and third switch S2 and third switch S3 conducting are closed, to make the second of the first metal-oxide-semiconductor M0 to connect
End is connected with the first connecting pin of the second bipolar junction transistor Q1, makes the second connection end of the second metal-oxide-semiconductor M1 and first ambipolar
The first connecting pin of transistor Q0 is connected, and specifically refers to attached drawing 4.
Below based on Fig. 2-7, the specific calibration process for introducing the voltage detection comparator in the present invention.
Assuming that the turn threshold of voltage detection comparator is Vth when Vos=0；Actually Vos is not equal to 0, it is therefore assumed that
Shown in Fig. 3 when connection, turn threshold Vth+, and (Vth+) > Vth；Assuming that turn threshold is shown in Fig. 4 when connection
Vth-, and (Vth-) < Vth, then be tied to form vertical just like ShiShimonoseki, it may be assumed that
(1) by taking Fig. 2 is overcharged voltage detection comparator as an example, its calibration process is specifically introduced.
Wherein, Fig. 5-7 is the circuit of the correspondence step of overcharged voltage detection comparator in a calibration process in the present invention
Connection schematic diagram.
Firstly, control switch combinational circuit 210 constantly replaces between the first connection type and the second connection type, and in electricity
Source V inputs the voltage gradually risen.
As the voltage of power end V gradually rises to V=Vth-, switch combination circuit 210 is in shown in fig. 5 second and connects
When connecing mode, the overturning for the first time of the comparison result of the output end OUT of voltage detection comparator output is that (it can be described as the to high level
One logic level), at this point, the current voltage of power end V and current connection type (i.e. Fig. 5 of switch combination circuit 210 need to be locked
Shown in the second connection type), so that power end V voltage maintain locking when current voltage, and record the first adjustable resistance
The currently active resistance of Ru, the current effective resistance are known as the first effective resistance, the first effective resistance Ru+ in Fig. 5, such as should
First effective resistance Ru+ can be the maximum resistance value of the first adjustable resistance Ru.
After the current connection type (the second connection type i.e. shown in fig. 5) for locking the switch combination circuit 210, then
The switch combination circuit 210 is set to be transformed to another connection type by current connection type, (the second company i.e. as shown in Figure 5
Connecing mode conversion is the first connection type shown in fig. 6), due to comparator turn threshold (Vth+) > of this connection type
(Vth-), the comparison result of the output end OUT output of voltage detection comparator can overturn that (it can be described as the second logic for low level
Level).Effective resistance value of the first adjustable resistance Ru need to be reduced, until the comparison that the output end OUT of voltage detection comparator is exported
As a result it until overturning is high level (it can be described as the first logic level) again, needs to record the currently active of adjustable resistance Ru at this time
Resistance, the current effective resistance are known as the second effective resistance, and the second effective resistance in Fig. 6 is Ru-, wherein (Ru-)=(Ru
+)-(R_trim1)-(R_trim2), and (R_trim1)=(R_trim2), (R_trim1)+(R_trim2) they are this reduction
The first adjustable resistance resistance value.
(Vth+)-(Vth-) difference is equivalent on (R_trim1)+(R_trim2) voltage for falling in Ru+ and subtracting.Cause:
Ru+ is subtracted:Comparator turn threshold afterwards i.e. etc.
Turn threshold when effect is Vos=0.
It is effectively hindered as shown in fig. 7, effective resistance value of the first adjustable resistance Ru is adjusted to first effective resistance value Ru+ and second
The average value of value Ru-.In this manner it is possible to reduce or eliminate influence of the input deviation to turn threshold precision, thus make to trim and
Chip threshold accuracy uniformity is good after encapsulation.
(2) by taking Fig. 2 is over-discharge voltage detection comparator as an example, its calibration process is specifically introduced.
Firstly, control switch combinational circuit 210 constantly replaces between the first connection type and the second connection type, and in electricity
Source V inputs the voltage gradually decreased.
As the voltage of power end V is gradually decrease to V=Vth+, when switch combination circuit 210 is in the first connection type,
The comparison result overturning for the first time of the output end OUT output of voltage detection comparator is that (it can be described as the first logic electricity to low level
It is flat), at this point, the current voltage of power end V and current connection type (i.e. the first connection side of switch combination circuit 210 need to be locked
Formula) so that the voltage of power end V persistently maintains current voltage when locking, and record the currently active of the first adjustable resistance Ru
Resistance, the current effective resistance are known as the first effective resistance Ru1.
After the current connection type (i.e. the first connection type) for locking the switch combination circuit 210, then make described open
It closes combinational circuit 210 and another middle connection type is transformed to by current connection type, i.e., the second company is transformed to by the first connection type
Mode is connect, due to comparator turn threshold (Vth-) < (Vth+) of this connection type, the output end OUT of voltage detection comparator
The comparison result of output can overturn as high level (it can be described as the second logic level).The effective of the first adjustable resistance Ru need to be increased
Resistance value, until the comparison result that the output end OUT of voltage detection comparator is exported is overturn again, for low level, (it can be described as first
Logic level) until, the currently active resistance of record adjustable resistance Ru is needed at this time, and it is effectively electric which is known as second
Hinder Ru2.Effective resistance value of adjustable resistance Ru is adjusted to the average value of the first effective resistance Ru1 and the second effective resistance Ru2.This
Sample can also reduce or eliminate influence of the input deviation to turn threshold precision, to make chip threshold value essence after trimming and encapsulating
It is good to spend uniformity.
It should be noted that the switch combination circuit 210 can also use other control circuit knots in the prior art
Structure, as long as its aforementioned function that switch combination circuit 210 may be implemented, for example, two single-pole double-throw switch (SPDT)s can be used
Open switch S0~S3 in replacement Fig. 2.
In the specific embodiment shown in Fig. 1-7, the first metal-oxide-semiconductor M0, the second metal-oxide-semiconductor M1 and third metal-oxide-semiconductor M2 are equal
For PMOS transistor, the first connecting pin, the second connection end of the first metal-oxide-semiconductor M0, the second metal-oxide-semiconductor M1 and third metal-oxide-semiconductor M2
It is respectively source electrode, the drain and gate of PMOS transistor with control terminal；The first bipolar junction transistor Q0 and second is ambipolar
Transistor Q1 is NPN transistor, the first connection of the first bipolar junction transistor Q0 and the second bipolar junction transistor Q1
End, second connection end and control terminal are respectively the collector, emitter-base bandgap grading and base stage of NPN transistor.
Fig. 8 is the circuit structure diagram of the battery protection system 800 of the present invention in one embodiment.The battery protection system
System 800 includes: positive power source terminal BP+, negative power end BP-, battery pack Battery, battery protecting circuit 810 and charge and discharge switch group
Close 820.The anode of the battery pack Battery is connected with positive power source terminal BP+.First power supply of the battery protecting circuit 810
Test side VCC is connected with the anode of the battery pack, and second source test side VSS is connected with the cathode of the battery pack,
Third power detecting end VM is connected with the negative power end BP-.The charge and discharge switch combination 820 is connected to the battery pack
Between cathode and negative power end, the first control terminal is connected with the discharge control terminal DOUT of the battery protecting circuit 810, the
Two control terminals are connected with the charge control end COUT of the battery protecting circuit 810.The battery protecting circuit includes voltage inspection
Survey comparator.The voltage detection comparator can be the improved voltage detection comparator being mentioned above.The voltage inspection
Side comparator is surveyed for detecting whether the voltage of tertiary voltage test side VM is more than or less than reference threshold voltage.In this embodiment
In, tertiary voltage test side VM is power end V shown in Fig. 2-7.
In the present invention, the word that the expressions such as " connection ", connected, " company ", " connecing " are electrical connected, unless otherwise instructed, then
Indicate direct or indirect electric connection.
It should be pointed out that any change that one skilled in the art does a specific embodiment of the invention
All without departing from the range of claims of the present invention.Correspondingly, the scope of the claims of the invention is also not merely limited to
In previous embodiment.
Claims (5)
1. a kind of battery protection system, characterized in that it comprises:
Positive power source terminal；
Negative power end；
Battery pack, anode are connected with positive power source terminal；
Battery protecting circuit, the first power detecting end are connected with the anode of the battery pack, second source test side and institute
The cathode for stating battery pack is connected, and third power detecting end is connected with the negative power end；
Charge and discharge switch combination, be connected between the cathode and negative power end of the battery pack, the first control terminal with it is described
The discharge control terminal of battery protecting circuit is connected, and the second control terminal is connected with the charge control end of the battery protecting circuit；
The battery protecting circuit includes voltage detection comparator, and whether the voltage for being used to detect third power detecting end is greater than
Or it is less than reference threshold voltage,
Voltage detection comparator includes the first adjustable resistance Ru, second resistance Rd, 3rd resistor Re, the 4th resistance Rs, the first MOS
Pipe M0, the second metal-oxide-semiconductor M1, third metal-oxide-semiconductor M2, the first bipolar junction transistor Q0, the second bipolar junction transistor Q1, bias current sources
Ibias and switch combination circuit,
Wherein, the first adjustable resistance Ru and second resistance Rd is sequentially connected in series between third power detecting end and ground terminal G,
The first connecting pin of first metal-oxide-semiconductor M0 is connected with third power detecting end, and the of control terminal and the first bipolar junction transistor Q0
One connecting pin is connected, 3rd resistor Re and fourth resistance Rs of the second connection end of the first bipolar junction transistor Q0 through being sequentially connected in series
Ground connection, the connecting node between the control terminal and the first adjustable resistance Ru and second resistance Rd of the first bipolar junction transistor Q0
It is connected；The first connecting pin of the second metal-oxide-semiconductor M1 is connected with third power detecting end, and control terminal is with the first metal-oxide-semiconductor M0's
Control terminal is connected, and the control terminal of the second bipolar junction transistor Q1 is connected with the control terminal of the first bipolar junction transistor Q0, and second pair
Connecting node between the second connection end of bipolar transistor Q1 and 3rd resistor Re and the 4th resistance Rs is connected；Third metal-oxide-semiconductor
The first connecting pin of M2 is connected with third power detecting end, the output end OUT phase of second connection end and voltage detection comparator
Even, control terminal is connected with the first connecting pin of the second bipolar junction transistor Q1；The input terminal and voltage of bias current sources Ibias
The output end of the output end OUT of detection comparator, bias current sources Ibias are grounded,
The switch combination circuit includes the first connecting pin, second connection end, third connecting pin and the 4th connecting pin, the switch
First connecting pin of combinational circuit is connected with the second connection end of the first metal-oxide-semiconductor M0, the second connection of the switch combination circuit
End is connected with the second connection end of the second metal-oxide-semiconductor M1, the third connecting pin of the switch combination circuit and the first bipolar transistor
The first connecting pin of pipe Q0 is connected, and the 4th connecting pin of the switch combination circuit and the first of the second bipolar junction transistor Q1 connect
End is connect to be connected,
The switch combination circuit includes the first connection type and the second connection type, when the switch combination circuit is in first
When connection type, the second connection end of the first metal-oxide-semiconductor M0 and the first connecting pin of the first bipolar junction transistor Q0 is made to be connected, makes
The second connection end of two metal-oxide-semiconductor M1 is connected with the first connecting pin of the second bipolar junction transistor Q1；When the switch combination circuit
When in the second connection type, make the second connection end of the first metal-oxide-semiconductor M0 and the first connecting pin of the second bipolar junction transistor Q1
It is connected, the second connection end of the second metal-oxide-semiconductor M1 and the first connecting pin of the first bipolar junction transistor Q0 is made to be connected.
2. battery protection system according to claim 1, which is characterized in that
When calibrating to voltage detection comparator, first control switch combinational circuit is in the first connection type and the second connection side
Constantly replace between formula, and inputs the voltage unidirectionally changed at third power detecting end；
As the voltage at third power detecting end gradually unidirectionally changes, when the comparison result first time of voltage detection comparator output
When overturning is the first logic level, the current voltage at third power detecting end and the current connection side of switch combination circuit are locked
Formula, the current voltage when voltage at third power detecting end being made to maintain locking, and the currently active resistance of adjustable resistance Ru is recorded,
The current effective resistance is known as the first effective resistance；
After the current connection type of locking switch combinational circuit, then it is transformed to switch combination circuit separately by current connection type
A kind of connection type adjusts adjustable resistance if the comparison result overturning of voltage detection comparator output is the second logic level
Effective resistance value of Ru, until the comparison result of voltage detection comparator output is overturn again as the first logic level；
When it is the first logic level that the comparison result of voltage detection comparator output is overturn again, record adjustable resistance Ru's works as
Preceding effective resistance, the current effective resistance are known as the second effective resistance；
Effective resistance value of adjustable resistance Ru is adjusted to the average value of the first effective resistance and the second effective resistance, and makes described open
It closes combinational circuit and is in the first connection type or the second connection type.
3. battery protection system according to claim 2, which is characterized in that the voltage detection comparator is overcharged voltage
Detection comparator,
The voltage that the input of third power detecting end unidirectionally changes is that third power detecting end inputs the electricity gradually risen
Pressure.
4. battery protection system according to claim 1, which is characterized in that the switch combination circuit includes first switch
S0, second switch S1, third switch S2 and the 4th switch S3,
One end of the first switch S0 is connected with the second connection end of the first metal-oxide-semiconductor M0, the other end and described first
The first connecting pin of bipolar junction transistor Q0 is connected, second company of one end of the second switch S1 and the second metal-oxide-semiconductor M1
Connect end be connected, the other end is connected with the first connecting pin of the second bipolar junction transistor Q1, one end of third switch S2 and
One end of first switch S0 is connected, and the other end of the third switch S2 is connected with the other end of second switch S1, the 4th switch
One end of S3 is connected with one end of second switch S1, and the other end of the 4th switch S3 is connected with the other end of first switch S0,
When the switch combination circuit is in the first connection type, first switch S0 and second switch S1 conducting, and third is opened
Close S2 and third switch S3 shutdown；
When the switch combination circuit is in the second connection type, first switch S0 and second switch S1 shutdown, and third is opened
Close S2 and third switch S4 conducting.
5. battery protection system according to claim 1, which is characterized in that
First metal-oxide-semiconductor, the second metal-oxide-semiconductor and third metal-oxide-semiconductor are PMOS transistor, first metal-oxide-semiconductor, the second metal-oxide-semiconductor
The first connecting pin, second connection end and control terminal with third metal-oxide-semiconductor are respectively the source electrode of PMOS transistor, drain and gate；
First bipolar junction transistor and the second bipolar junction transistor are NPN transistor, first bipolar transistor
Pipe and the second bipolar junction transistor the first connecting pin, second connection end and control terminal be respectively NPN transistor collector,
Emitter-base bandgap grading and base stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711256068.6A CN107968383B (en) | 2017-12-04 | 2017-12-04 | Battery protection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711256068.6A CN107968383B (en) | 2017-12-04 | 2017-12-04 | Battery protection system |
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| CN108923489B (en) * | 2018-07-25 | 2020-10-27 | 南京中感微电子有限公司 | Battery protection circuit |
| CN117394508B (en) * | 2023-12-13 | 2024-04-02 | 成都利普芯微电子有限公司 | Battery protection packaging body |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101645609A (en) * | 2008-08-08 | 2010-02-10 | 凹凸电子（武汉）有限公司 | Battery system, charging/discharging circuit thereof and charging/discharging control method thereof |
| CN102790409A (en) * | 2011-05-16 | 2012-11-21 | 慧荣科技股份有限公司 | Charging and discharging device |
| CN203491749U (en) * | 2013-09-26 | 2014-03-19 | 无锡中星微电子有限公司 | Power supply management circuit |
| CN205178560U (en) * | 2015-11-06 | 2016-04-20 | 无锡中感微电子股份有限公司 | Charging circuit |
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| US6856117B2 (en) * | 2003-03-24 | 2005-02-15 | Texas Instruments Incorporated | Detection circuit having an adaptive threshold |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101645609A (en) * | 2008-08-08 | 2010-02-10 | 凹凸电子（武汉）有限公司 | Battery system, charging/discharging circuit thereof and charging/discharging control method thereof |
| CN102790409A (en) * | 2011-05-16 | 2012-11-21 | 慧荣科技股份有限公司 | Charging and discharging device |
| CN203491749U (en) * | 2013-09-26 | 2014-03-19 | 无锡中星微电子有限公司 | Power supply management circuit |
| CN205178560U (en) * | 2015-11-06 | 2016-04-20 | 无锡中感微电子股份有限公司 | Charging circuit |
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