CN108137326A8 - 新型碳同素异形体:Protomene - Google Patents
新型碳同素异形体:Protomene Download PDFInfo
- Publication number
- CN108137326A8 CN108137326A8 CN201680056445.9A CN201680056445A CN108137326A8 CN 108137326 A8 CN108137326 A8 CN 108137326A8 CN 201680056445 A CN201680056445 A CN 201680056445A CN 108137326 A8 CN108137326 A8 CN 108137326A8
- Authority
- CN
- China
- Prior art keywords
- carbon
- allotrope
- composition
- matter
- carbon atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021387 carbon allotrope Inorganic materials 0.000 title claims abstract description 75
- 229910021415 protomene Inorganic materials 0.000 title description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 41
- 150000001721 carbon Chemical group 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 40
- 229910021402 lonsdaleite Inorganic materials 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 230000005355 Hall effect Effects 0.000 claims description 4
- 230000005693 optoelectronics Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910021386 carbon form Inorganic materials 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000000446 fuel Substances 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000002096 quantum dot Substances 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 abstract description 23
- 239000010432 diamond Substances 0.000 description 20
- 229910003460 diamond Inorganic materials 0.000 description 19
- 239000010410 layer Substances 0.000 description 19
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 229910003472 fullerene Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- OJYGBLRPYBAHRT-UHFFFAOYSA-N alphachloralose Chemical compound O1C(C(Cl)(Cl)Cl)OC2C(O)C(C(O)CO)OC21 OJYGBLRPYBAHRT-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002646 carbon nanobud Substances 0.000 description 2
- 229910021394 carbon nanobud Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000002837 carbocyclic group Chemical group 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002625 nanobud Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- -1 uranium group metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/8303—Diamond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Inert Electrodes (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562233796P | 2015-09-28 | 2015-09-28 | |
US62/233796 | 2015-10-14 | ||
US15/201453 | 2016-07-03 | ||
US15/201,453 US20180155199A1 (en) | 2015-09-28 | 2016-07-03 | Novel Carbon Allotrope: Protomene |
PCT/US2016/045933 WO2017058363A1 (en) | 2015-09-28 | 2016-08-07 | A novel carbon allotrope: protomene |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108137326A CN108137326A (zh) | 2018-06-08 |
CN108137326A8 true CN108137326A8 (zh) | 2018-07-20 |
Family
ID=58424107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680056445.9A Pending CN108137326A (zh) | 2015-09-28 | 2016-08-07 | 新型碳同素异形体:Protomene |
Country Status (8)
Country | Link |
---|---|
US (1) | US20180155199A1 (zh) |
EP (1) | EP3334687A4 (zh) |
JP (1) | JP2018537374A (zh) |
KR (1) | KR20180059455A (zh) |
CN (1) | CN108137326A (zh) |
GB (1) | GB2557783A (zh) |
HK (1) | HK1253721A1 (zh) |
WO (1) | WO2017058363A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11718530B2 (en) | 2017-03-17 | 2023-08-08 | Structured Nano Carbon LLC | Allotrope of carbon having increased electron delocalization |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6080470A (en) * | 1996-06-17 | 2000-06-27 | Dorfman; Benjamin F. | Hard graphite-like material bonded by diamond-like framework |
JP2000178070A (ja) * | 1998-12-17 | 2000-06-27 | F Dolfman Benjamin | ダイヤモンド様骨格で結合された硬質グラファイト様材料 |
KR101019029B1 (ko) * | 2007-08-14 | 2011-03-04 | 한국과학기술연구원 | 그라핀 하이브리드 물질 및 그 제조 방법 |
US9156695B2 (en) * | 2012-07-31 | 2015-10-13 | Raytheon Company | Method for fabricating carbon allotropes |
KR101806917B1 (ko) * | 2012-09-06 | 2017-12-08 | 한화테크윈 주식회사 | 그래핀의 제조 방법 |
JP2014169193A (ja) * | 2013-03-01 | 2014-09-18 | Nec Corp | ナノカーボンとグラフェンまたはグラファイトが複合した炭素材料及びその製造方法 |
EP2801551A1 (en) * | 2013-05-08 | 2014-11-12 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Graphene with very high charge carrier mobility and preparation thereof |
US10373725B2 (en) * | 2014-11-06 | 2019-08-06 | Ii-Vi Incorporated | Highly twinned, oriented polycrystalline diamond film and method of manufacture thereof |
US20180265361A1 (en) * | 2015-02-18 | 2018-09-20 | Larry Burchfield | Novel Carbon Allotrope |
-
2016
- 2016-07-03 US US15/201,453 patent/US20180155199A1/en not_active Abandoned
- 2016-08-07 KR KR1020187008640A patent/KR20180059455A/ko unknown
- 2016-08-07 CN CN201680056445.9A patent/CN108137326A/zh active Pending
- 2016-08-07 GB GB1803999.0A patent/GB2557783A/en not_active Withdrawn
- 2016-08-07 WO PCT/US2016/045933 patent/WO2017058363A1/en active Application Filing
- 2016-08-07 JP JP2018515832A patent/JP2018537374A/ja not_active Abandoned
- 2016-08-07 EP EP16852243.1A patent/EP3334687A4/en not_active Withdrawn
-
2018
- 2018-10-10 HK HK18112869.3A patent/HK1253721A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20180059455A (ko) | 2018-06-04 |
EP3334687A1 (en) | 2018-06-20 |
JP2018537374A (ja) | 2018-12-20 |
GB2557783A (en) | 2018-06-27 |
WO2017058363A1 (en) | 2017-04-06 |
CN108137326A (zh) | 2018-06-08 |
GB201803999D0 (en) | 2018-04-25 |
EP3334687A4 (en) | 2018-12-26 |
US20180155199A1 (en) | 2018-06-07 |
HK1253721A1 (zh) | 2019-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
CI02 | Correction of invention patent application | ||
CI02 | Correction of invention patent application |
Correction item: First priority data Correct: 62/233796 2015.10.14 US False: 62/233796 2015.09.28 US Number: 23-02 Page: The title page Volume: 34 Correction item: First priority data Correct: 62/233796 2015.10.14 US False: 62/233796 2015.09.28 US Number: 23-02 Volume: 34 |
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Application publication date: 20180608 |