CN108134590A - A kind of N channel wave filter - Google Patents
A kind of N channel wave filter Download PDFInfo
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- CN108134590A CN108134590A CN201711384855.9A CN201711384855A CN108134590A CN 108134590 A CN108134590 A CN 108134590A CN 201711384855 A CN201711384855 A CN 201711384855A CN 108134590 A CN108134590 A CN 108134590A
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- Prior art keywords
- wave filter
- trsanscondutance amplifier
- field
- channel
- channel wave
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/0422—Frequency selective two-port networks using transconductance amplifiers, e.g. gmC filters
- H03H11/0466—Filters combining transconductance amplifiers with other active elements, e.g. operational amplifiers, transistors, voltage conveyors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/01—Tuned parameter of filter characteristics
- H03H2210/012—Centre frequency; Cut-off frequency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/01—Tuned parameter of filter characteristics
- H03H2210/017—Amplitude, gain or attenuation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/02—Variable filter component
- H03H2210/025—Capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/02—Variable filter component
- H03H2210/026—Inductor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/02—Variable filter component
- H03H2210/028—Resistor
Abstract
The present invention relates to a kind of N channel wave filter, including zero suppression circuit, trsanscondutance amplifier Gm, first switch condenser network and second switch condenser network；The input terminal of the trsanscondutance amplifier Gm is connect with one end of the zero suppression circuit, the other end of the zero suppression circuit is connect with the output terminal of the trsanscondutance amplifier Gm, the first switch condenser network is connect with the input terminal of the trsanscondutance amplifier Gm, and the second switch condenser network is connect with the output terminal of the trsanscondutance amplifier Gm；The first switch condenser network and the second switch condenser network filter for N channel；The trsanscondutance amplifier Gm is used to provide loop gain for the N channel wave filter；The zero suppression circuit is used to inhibit the transmission zero of the N channel wave filter.N channel wave filter provided by the invention has the technique effect that high gain, regulable center frequency are humorous, zero inhibits and noise is low.
Description
Technical field
The present invention relates to bandpass filter technical field more particularly to a kind of N channel wave filters.
Background technology
To meet various different demands, people are pursuing the low work(of multi-functional low cost that can be applicable in a variety of communication standards always
The multimode multi-frequency receiver of consumption.The front end of multimode multi-frequency receiver usually requires setting wave filter, this is because, on the one hand, one
A useful weak signal is often with there are one stronger out-of-band interference signal, if receiver front end does not have bandpass filter,
Interference signal not only directly makes wave filter saturation, but also second-order distortion influence inband signaling can be generated near direct current signal
Signal-to-noise ratio effectively inhibits interference signal therefore, it is necessary to wave filter；On the other hand, in order to meet multimode multi-frequency receiver
Receive capabilities, multimode multi-frequency mobile communication system front end must still provide enough frequency selectivities, to realize centre frequency, band
The performance that width, gain etc. are accurately tuned with the difference of reception pattern.
Invention content
The technical problem to be solved by the present invention is to solve the above shortcomings of the prior art and to provide a kind of N channel wave filter,
With zero inhibition, high-gain, centre frequency tuning range be wide, technique effect of strong environmental adaptability.
The technical solution that the present invention solves above-mentioned technical problem is as follows：A kind of N channel wave filter inhibits electricity including zero
Road, trsanscondutance amplifier Gm, first switch condenser network and second switch condenser network；
The input terminal of the trsanscondutance amplifier Gm is connect with one end of the zero suppression circuit, the zero suppression circuit
The other end connect with the output terminal of the trsanscondutance amplifier Gm, the first switch condenser network and the trsanscondutance amplifier Gm
Input terminal connection, the second switch condenser network connect with the output terminal of the trsanscondutance amplifier Gm；The first switch
Condenser network and the second switch condenser network filter for N channel；The trsanscondutance amplifier Gm is used for as the N channel
Wave filter provides loop gain；The zero suppression circuit is used to inhibit the transmission zero of the N channel wave filter.
The beneficial effects of the invention are as follows：First switch condenser network and second switch condenser network are used to implement N channel
The function of filtering, trsanscondutance amplifier improve the loop gain of N channel wave filter, and zero suppression circuit inhibits N channel wave filter
Transmission zero.The present invention employs zero suppression technology and gain boosting technique simultaneously in same circuit structure so that N
Path filter inhibits the ability of interference to greatly enhance, and overall performance is improved, while circuit structure is simple, is easy to real
It is existing.
Further：The zero suppression circuit includes feedback inductance L1, coupled capacitor C1, inductance L2 and inductance L3；
Input behind one end of one end connection inductance L2 of the feedback inductance L1 as the N channel wave filter
It holds, the output terminal behind one end of the other end connection inductance L3 of the feedback inductance L1 as the N channel wave filter；Institute
The other end for stating inductance L2 is connect with the input terminal of the trsanscondutance amplifier Gm, and the other end and the mutual conductance of the inductance L3 are put
The output terminal connection of big device Gm, the input terminal of the trsanscondutance amplifier Gm pass through the coupled capacitor C1 and the trsanscondutance amplifier
The output terminal connection of Gm.
The advantageous effect of above-mentioned further scheme is：Feedback inductance L1 creates transmission in the near pass-band of N channel wave filter
The parallel-connection structure of zero, feedback inductance L1 and inductance L2, inductance L3 and coupled capacitor C1 change the position of transmission zero, realize zero
Point inhibits, and the stopband for improving N channel wave filter inhibits；Wherein inductance L2 and inductance L3 can also weaken the noise of circuit so that
The noise coefficient of circuit is improved；Trsanscondutance amplifier Gm provides loop gain, reduces physical capacitors, so that the increasing of passband
Benefit is improved；Two switched-capacitor circuits are used to implement N channel filter function, and frequency filtering is tunable so that N channel is filtered
Wave utensil has centre frequency freely adjustable performance.
Further：The trsanscondutance amplifier includes the field-effect tube gmn and electricity of the field-effect tube gmp of P-channel, N-channel
RF is hindered, the grid of the field-effect tube gmp is connect with the grid of field-effect tube gmn, and drain electrode and the field of the field-effect tube gmp are imitated
Should pipe gmn drain electrode connection, the source electrode of the field-effect tube gmp connects power supply, and the source electrode ground connection of the field-effect tube gmn is described
Resistance RF is connected between grid and the drain electrode of the field-effect tube gmp, and the resistance RF is also in parallel with the coupled capacitor C1.
The advantageous effect of above-mentioned further scheme is：Circuit is provided in trsanscondutance amplifier Gm accesses circuit for circuit to increase
Benefit so that output gain improves, so as to reduce base band capacitance so that circuit area is reduced.
Further：The resistance value of the resistance RF is 500 Ω, and the breadth length ratio of the field-effect tube gmp is 1200um/200nm,
The breadth length ratio of the field-effect tube gmn is 600um/200nm.
The advantageous effect of above-mentioned further scheme is：By set the resistance value of resistance RF, the breadth length ratio of field-effect tube gmp with
And the breadth length ratio of field-effect tube gmn, there is provided suitable transconductance values so that circuit carries under the premise of stabilization, low-noise factor
High-gain.
Further：The first switch condenser network includes at least two switching capacity Ci and at least two switch yards are imitated
Should pipe Si, the switching capacity Ci it is equal with the switched field effect pipe Si quantity and correspond, each switch yard effect
Should pipe Si source electrode by corresponding switching capacity Ci be grounded, when the grid of all switched field effect pipe Si is with first
Clock generator connects, and the input terminal to drain with the trsanscondutance amplifier Gm of all switched field effect pipe Si is connect.
The advantageous effect of above-mentioned further scheme is：Clock generator generates clock signal, under the action of clock signal,
Multiple switch field-effect tube Si is connected and is sampled integration to each access in turn, the final effect for realizing bandpass filtering, N
Channel selector condenser network also has centre frequency freely tunable characteristic.
Further：The second switch condenser network includes at least two switching capacity Cj and at least two switch yards are imitated
Should pipe Sj, the switching capacity Cj it is equal with the switched field effect pipe Sj quantity and correspond, each switch yard effect
Should pipe Sj source electrode by corresponding switching capacity Cj be grounded, when the grid of all switched field effect pipe Sj is with second
Clock generator connects, and the output terminal to drain with the trsanscondutance amplifier Gm of all switched field effect pipe Sj is connect.
The advantageous effect of above-mentioned further scheme is：The structure phase of second switch condenser network and first switch condenser network
Together, technique effect is also identical.
Further：The N channel wave filter further includes input resistance RS, and the input terminal of the N channel wave filter passes through defeated
Enter resistance RS to connect with signal source to be filtered.
The advantageous effect of above-mentioned further scheme is：It is defeated that signal source to be filtered is converted to voltage signal by input resistance RS
Enter.
Further：The N channel wave filter further includes load resistance RL, and the output terminal of the N channel wave filter, which passes through, to be born
Carry resistance RL ground connection.
The advantageous effect of above-mentioned further scheme is：Filtered electric signal is converted into voltage letter by the load resistance RL
Number output.
Description of the drawings
Fig. 1 is a kind of fundamental diagram of N channel wave filter provided by the invention；
Fig. 2 is a kind of electrical block diagram of N channel wave filter provided by the invention；
Fig. 3 is a kind of circuit diagram of the trsanscondutance amplifier of N channel wave filter provided by the invention；
Fig. 4 is a kind of circuit diagram of the switched-capacitor circuit of N channel wave filter provided by the invention；
Fig. 5 is a kind of input resistance of N channel wave filter provided by the invention and the circuit diagram of load resistance；
Fig. 6 is a kind of frequency characteristic curve diagram of N channel wave filter provided by the invention；
Fig. 7 is a kind of humorous performance plot of regulable center frequency of N channel wave filter provided by the invention；
Fig. 8 is a kind of noise coefficient simulation result figure of N channel wave filter provided by the invention.
In attached drawing, parts list represented by the reference numerals are as follows：
11st, first switch condenser network, 12, second switch condenser network, the 21, first clock generator, 22, second clock
Generator, 3, zero suppression circuit.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
Below in conjunction with the accompanying drawings, the present invention will be described.
As shown in Figure 1, the present invention provides a kind of N channel wave filter (hereinafter referred to as wave filter), including zero suppression circuit
3rd, trsanscondutance amplifier Gm, first switch condenser network 11 and second switch condenser network 12；
The input terminal of the trsanscondutance amplifier Gm is connect with one end of the zero suppression circuit 3, and the zero inhibits electricity
The other end on road 3 is connect with the output terminal of the trsanscondutance amplifier Gm, and the first switch condenser network 11 is put with the mutual conductance
The input terminal connection of big device Gm, the second switch condenser network 12 are connect with the output terminal of the trsanscondutance amplifier Gm；It is described
First switch condenser network 11 and the second switch condenser network 12 filter for N channel；The trsanscondutance amplifier Gm is used
In providing loop gain for the N channel wave filter；The zero suppression circuit 3 is used to inhibit the biography of the N channel wave filter
Defeated zero.
The embodiment of the present invention realizes the work(of N channel filtering by first switch condenser network and second switch condenser network
Can, the function of rejects trap transmission zero is realized by zero suppression circuit 3, is realized by trsanscondutance amplifier Gm and improves filtering
The function of device gain employs zero suppression technology and gain boosting technique simultaneously in same circuit structure so that filtering
Device inhibits the ability of interference to greatly enhance, and overall performance is improved, while circuit structure is simple, it is easy to accomplish.
Preferably, as shown in Fig. 2, the zero suppression circuit include feedback inductance L1, coupled capacitor C1, inductance L2 and
Inductance L3；
Input behind one end of one end connection inductance L2 of the feedback inductance L1 as the N channel wave filter
It holds, the output terminal behind one end of the other end connection inductance L3 of the feedback inductance L1 as the N channel wave filter；Institute
The other end for stating inductance L2 is connect with the input terminal of the trsanscondutance amplifier Gm, and the other end and the mutual conductance of the inductance L3 are put
The output terminal connection of big device Gm, the input terminal of the trsanscondutance amplifier Gm pass through the coupled capacitor C1 and the trsanscondutance amplifier
The output terminal connection of Gm.
The embodiment of the present invention is realized and is being filtered by accessing feedback inductance L1 between the input terminal and output terminal of wave filter
The near pass-band of device creates transmission zero, and the feedback inductance L1 positions that changes transmission zero in parallel with coupled capacitor C1 inhibits to pass
Defeated zero, and then inhibit high reject signal；Simultaneously by accessing inductance L1, L2, weaken circuit noise.The prior art is using feedback
Capacitance inhibits, but circuit does not take noise removing measure as feedback device to improve the stopband of wave filter so that wave filter
Noiseproof feature it is not good enough, can not also realize zero inhibit and gain improve performance.Present invention structure inductance L1, inductance L2
And the parallel-connection structure of coupled capacitor C1 and feedback inductance L1, stopband inhibition can be not only improved, also reduces circuit noise.This
The advantage of invention is in same circuit structure while employs zero suppression technology and gain boosting technique so that inhibits
The ability of interference greatly enhances so that the overall performance of wave filter is improved, while circuit structure is simple, it is easy to accomplish.
As shown in Figure 3, it is preferred that the trsanscondutance amplifier Gm includes the field-effect of the field-effect tube gmp, N-channel of P-channel
Pipe gmn and resistance RF, the grid of the field-effect tube gmp are connect with the grid of field-effect tube gmn, the field-effect tube gmp
Drain electrode connect with the drain electrode of field-effect tube gmn, the source electrode of the field-effect tube gmp connects power supply, the source of the field-effect tube gmn
Pole is grounded, and the resistance RF is connected between grid and the drain electrode of the field-effect tube gmp, and the resistance RF is also coupled with described
Capacitance C1 is in parallel.Trsanscondutance amplifier Gm provides loop gain for wave filter so that output gain improves, so as to reduce base band
Capacitance so that circuit area is reduced.
Preferably, the resistance value of the resistance RF is 500 Ω, and the breadth length ratio of the field-effect tube gmp is 1200um/200nm,
The breadth length ratio of the field-effect tube gmn is 600um/200nm.
Trsanscondutance amplifier Gm is used to improve the gain of wave filter, and the size of gain is with the transconductance value of trsanscondutance amplifier Gm into just
Than, therefore the transconductance value for increasing trsanscondutance amplifier Gm can improve the gain of wave filter.But increase trsanscondutance amplifier Gm across
Leading value can cause filter power consumption to increase, therefore it is critically important to choose suitable transconductance value.Trsanscondutance amplifier provided in this embodiment
The transconductance value of Gm is related to the breadth length ratio of the resistance value of resistance RF, the breadth length ratio of field-effect tube gmp and field-effect tube gmn, this reality
Resistance RF, the field-effect tube gmp of suitable breadth length ratio and field-effect tube gmn that example chooses suitable resistance value are applied, so as into one
The suitable transconductance value of acquisition of step.
The gain of N channel wave filter is equal to the ratio between the output voltage and input voltage of wave filter.The present embodiment carries
The input terminal of the wave filter of confession is connect by input resistance RS with signal source to be filtered, and the output terminal of wave filter passes through load
Resistance RL is grounded, and the gain expressions of wave filter provided in this embodiment are：
In formula, VoutFor the output voltage of wave filter, VinFor the input voltage of wave filter, gmBe trsanscondutance amplifier Gm across
Lead value, RLThe resistance value of load resistance for wave filter, resistance values of the Rs for the input resistance of wave filter, RSWRepresent switched-capacitor circuit
Equivalent resistance, R represents the dead resistance of feedback inductance L1, inductance L2 and inductance L3.
It from the above equation, we can see that can be by increasing transconductance value gmOr the resistance value R of load resistanceLTo improve the gain of wave filter
Av.If improve the transconductance value g of trsanscondutance amplifier Gmm, the power consumption of wave filter can be increased.If improve load resistance resistance value RL, load electricity
Direct current pressure drop in resistance can increase, and reduce output voltage swing so that entire circuit is unstable, influences the stability of circuit.Cause
This present invention is by setting the resistance value of load resistance RF, field-effect tube gmp and the breadth length ratio of field-effect tube gmn, and there is provided conjunctions
Suitable transconductance value gmSo that circuit improves gain under the premise of stabilization, low-noise factor.
As shown in Figure 4, it is preferred that the first switch condenser network 11 is including at least two switching capacity Ci and at least
Two switched field effect pipe Si.The switching capacity Ci and switched field effect pipe Si is m and corresponds, m >=2.m
A switching capacity is respectively that Cim, m switched field effect pipes of Ci1, Ci2 ... are respectively Si1, Si2 ... Sim.Each institute
The source electrode for stating switched field effect pipe is grounded by corresponding switching capacity, and the grids of all switched field effect pipes is with
One clock generator 21 connects, and the drain electrode of all switched field effect pipes connects with the input terminal of the trsanscondutance amplifier Gm
It connects.
Each switched field effect pipe forms a channel with corresponding switching capacity.When first clock generator 21 generates
Clock signal, the first clock generator 21 is using clock generator in the prior art.First switch condenser network 11 is in clock
Under the action of signal, multiple switch field-effect tube Si is connected in turn, and is sampled integration to the input signal of corresponding channel,
Realize the effect of output signal bandpass filtering, Simultaneous Switching condenser network also has the adjustable performance of frequency.Preferably, switch yard
The breadth length ratio of effect pipe Si is 80um/600nm.
As shown in Figure 4, it is preferred that the second switch condenser network 12 is including at least two switching capacity Cj and at least
Two switched field effect pipe Sj.The switching capacity Cj and switched field effect pipe Sj is n and corresponds, n >=2.n
A switching capacity includes Cjn, n switched field effect pipes of Cj1, Cj2 ... and includes Sj1, Sj2 ... Sjn.It is opened described in all
The grid for closing field-effect tube Sj is connect with second clock generator 22, and the drain electrode of all switched field effect pipe Sj is and institute
State the output terminal connection of trsanscondutance amplifier Gm.
Each switched field effect pipe Sj forms a channel with corresponding switching capacity Cj.Second clock generator 22 produces
Generating clock signal, second clock generator 22 is using clock generator in the prior art.Second switch condenser network 12 exists
Under the action of clock signal, multiple switch field-effect tube Sj is connected in turn, and product is sampled to the output signal of corresponding channel
Point, realize the effect of output signal bandpass filtering, Simultaneous Switching condenser network is also with the adjustable performance of frequency.Preferably, it opens
The breadth length ratio for closing field-effect tube Sj is 80um/600nm.
Preferably, the first clock generator 21 and second clock generator 22 are same clock generator；Alternatively, first
Clock generator 21 is identical with the frequency of the clock signal of second clock generator 22.
As shown in Figure 5, it is preferred that the N channel wave filter further includes input resistance RS, the N channel wave filter it is defeated
Enter end to connect with signal source VIN to be filtered by input resistance RS.Input resistance RS is converted to signal source VIN to be filtered
Voltage signal inputs.
As shown in Figure 5, it is preferred that the N channel wave filter further includes load resistance RL, the N channel wave filter it is defeated
Outlet is grounded by load resistance RL.Load resistance RL is used for providing the load needed for output gain, moreover it is possible to play output electricity
Signal is converted into the effect of voltage signal output, and respective impedance is provided for late-class circuit matching.
The output voltage transfer function of N channel wave filter provided by the invention is：
In formula, centre frequencies of the ω for wave filter, resistance values of the Rs for input resistance RS, CiAppearance for switching capacity Ci
Value, CjFor the capacitance of switching capacity Cj, N is port number.
Its passband width is：
Quality factor are：
Wherein it is CnBase band capacitance, AvIt is filter gain.
N channel wave filter, that is, multi-channel filter, carries out emulation experiment by taking N=8 as an example, and Fig. 6,7,8 show simulation result.
Fig. 6 shows a kind of frequency characteristic figure of N channel wave filter provided by the invention, and horizontal axis represents input frequency, vertical pivot table in Fig. 6
Show gain.Represent that Fig. 7 shows the humorous performance plot of regulable center frequency of N channel wave filter provided by the invention a kind of, it is horizontal in Fig. 7
Axis represents input frequency, and vertical pivot represents gain, five different centre frequencies are shown in Fig. 7.Fig. 8 shows offer of the present invention
A kind of N channel wave filter noise coefficient simulation result figure, horizontal axis represents input frequency in Fig. 8, and vertical pivot represents noise coefficient.
From Fig. 6, Fig. 7, Fig. 8 can be seen that N channel wave filter provided by the invention with high gain, regulable center frequency is humorous, noise is low
Technique effect.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of N channel wave filter, which is characterized in that including zero suppression circuit, trsanscondutance amplifier Gm, first switch capacitance electricity
Road and second switch condenser network；
The input terminal of the trsanscondutance amplifier Gm is connect with one end of the zero suppression circuit, the zero suppression circuit it is another
One end is connect with the output terminal of the trsanscondutance amplifier Gm, and the first switch condenser network is defeated with the trsanscondutance amplifier Gm's
Enter end connection, the second switch condenser network is connect with the output terminal of the trsanscondutance amplifier Gm；The first switch capacitance
Circuit and the second switch condenser network filter for N channel；The trsanscondutance amplifier Gm is used to filter for the N channel
Device provides loop gain；The zero suppression circuit is used to inhibit the transmission zero of the N channel wave filter.
2. N channel wave filter according to claim 1, which is characterized in that the zero suppression circuit include feedback inductance L1,
Coupled capacitor C1, inductance L2 and inductance L3；
Input terminal behind one end of one end connection inductance L2 of the feedback inductance L1 as the N channel wave filter, institute
The other end for stating feedback inductance L1 connects output terminal behind one end of the inductance L3 as the N channel wave filter；The electricity
The other end of sense L2 is connect with the input terminal of the trsanscondutance amplifier Gm, the other end and the trsanscondutance amplifier of the inductance L3
The output terminal connection of Gm, the input terminal of the trsanscondutance amplifier Gm pass through the coupled capacitor C1's and trsanscondutance amplifier Gm
Output terminal connects.
3. N channel wave filter according to claim 2, which is characterized in that imitate the field that the trsanscondutance amplifier Gm includes P-channel
Should pipe gmp, the field-effect tube gmn of N-channel and resistance RF, the grid of the field-effect tube gmp and the grid of field-effect tube gmn
Connection, the drain electrode of the field-effect tube gmp are connect with the drain electrode of field-effect tube gmn, and the source electrode of the field-effect tube gmp connects electricity
Source, the source electrode ground connection of the field-effect tube gmn, the resistance RF are connected between grid and the drain electrode of the field-effect tube gmp,
The resistance RF is also in parallel with the coupled capacitor C1.
4. N channel wave filter according to claim 3, which is characterized in that the resistance value of the resistance RF be 500 Ω, the field
The breadth length ratio of effect pipe gmp is 1200um/200nm, and the breadth length ratio of the field-effect tube gmn is 600um/200nm.
5. N channel wave filter according to claim 1, which is characterized in that the first switch condenser network includes at least two
A switching capacity Ci and at least two switched field effect pipe Si, the switching capacity Ci and the switched field effect pipe Si quantity
Equal and one-to-one correspondence, the source electrode of each switched field effect pipe Si pass through corresponding switching capacity Ci and are grounded, Suo Yousuo
The grid for stating switched field effect pipe Si is connect with the first clock generator, the drain electrode of all switched field effect pipe Si with
The input terminal connection of the trsanscondutance amplifier Gm.
6. N channel wave filter according to claim 1, which is characterized in that the second switch condenser network includes at least two
A switching capacity Cj and at least two switched field effect pipe Sj, the switching capacity Cj and the switched field effect pipe Sj quantity
Equal and one-to-one correspondence, the source electrode of each switched field effect pipe Sj pass through corresponding switching capacity Cj and are grounded, Suo Yousuo
The grid for stating switched field effect pipe Sj is connect with second clock generator, the drain electrode of all switched field effect pipe Sj with
The output terminal connection of the trsanscondutance amplifier Gm.
7. N channel wave filter according to claim 1, which is characterized in that the N channel wave filter further includes input resistance
RS, the input terminal of the N channel wave filter are connect by input resistance RS with signal source to be filtered.
8. N channel wave filter according to claim 1, which is characterized in that the N channel wave filter further includes load resistance
RL, the output terminal of the N channel wave filter are grounded by load resistance RL.
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| ZHICHENG LIN 等: "Analysis and Modeling of a Gain-Boosted N-Path Switched-Capacitor Bandpass Filter", 《IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS》 * |
| 何小莲: "差分时钟增益提高型N 通道带通滤波器设计", 《太赫兹科学与电子信息学报》 * |
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