CN108130599A - A kind of pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip - Google Patents
A kind of pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip Download PDFInfo
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- CN108130599A CN108130599A CN201711323884.4A CN201711323884A CN108130599A CN 108130599 A CN108130599 A CN 108130599A CN 201711323884 A CN201711323884 A CN 201711323884A CN 108130599 A CN108130599 A CN 108130599A
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- CN
- China
- Prior art keywords
- buddha
- polysilicon chip
- wire cutting
- warrior attendant
- attendant wire
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Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 51
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000005520 cutting process Methods 0.000 title claims abstract description 35
- 238000005530 etching Methods 0.000 title claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 239000000243 solution Substances 0.000 claims abstract description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011259 mixed solution Substances 0.000 claims abstract description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 31
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 16
- 229910021645 metal ion Inorganic materials 0.000 claims description 16
- 230000035484 reaction time Effects 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910001431 copper ion Inorganic materials 0.000 claims description 4
- 229910001453 nickel ion Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 238000007605 air drying Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 44
- 229910052710 silicon Inorganic materials 0.000 abstract description 44
- 239000010703 silicon Substances 0.000 abstract description 44
- 238000002310 reflectometry Methods 0.000 abstract description 14
- 239000004570 mortar (masonry) Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 239000002253 acid Substances 0.000 description 14
- 239000008367 deionised water Substances 0.000 description 14
- 229910021641 deionized water Inorganic materials 0.000 description 14
- 239000003054 catalyst Substances 0.000 description 7
- 239000012295 chemical reaction liquid Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 230000002000 scavenging effect Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910001868 water Inorganic materials 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000013067 intermediate product Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- -1 silver ions Chemical class 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of pre- etching methods of Buddha's warrior attendant wire cutting polysilicon chip, and processing is carried out 30 ~ 100 seconds to Buddha's warrior attendant wire cutting polysilicon chip using Woolen-making liquid；It is 20% ~ 67% salpeter solution alternatively, using the mixed solution of ammonium hydroxide and hydrogen peroxide to through step to use mass concentration（1）Treated, and polysilicon chip is handled.This technological process is simple, and with existing conventional polycrystalline battery process matching degree height, workshop can be realized without carrying out extensive change；Silicon chip after the completion of this technique flows directly into conventional polycrystalline process for etching, can prepare the submicron order matte for meeting industry requirement；The matte that this technique is prepared on Buddha's warrior attendant wire cutting polysilicon chip surface is basically identical using the matte that sour process for etching obtains with mortar cutting silicon chip, no stria and brilliant flower problem；The matte reflectivity that this process Buddha's warrior attendant wire cutting polysilicon chip obtains is adjusted, with that can increase substantially cell piece efficiency after the producing line process matching of battery workshop.
Description
Technical field
The present invention relates to a kind of pre- etching methods of Buddha's warrior attendant wire cutting polysilicon chip.
Background technology
At present, small bumps are formed in order to which surface is inhibited to reflect on the surface of solar cell, it is small by this
Bumps, incident light are absorbed in inside solar energy battery well by multiple reflections, efficiency, which is called texture.
In general, in monocrystaline silicon solar cell, by using the alkaline aqueous solutions such as NaOH, KOH and IPA（Isopropanol）'s
Wet-type etching forms texture.The difference of etching speed of the technology since crystal face is utilized, as monocrystalline silicon by one
A crystal face is effective, but there are various crystal faces in face as polysilicon in the case of forming chip
Under, it is impossible to fully reduce reflectivity.
Therefore, the texture for studying mechanical processing method and reactive ion etching method etc. independent of crystal face orientation is formed
Method.Due to carrying out monolithic processing in mechanical processing method, in addition, due to reactive ion etching method although certain can be focused on
The piece number of degree, but using vacuum plant, therefore exist and expend processing cost this problem.
Therefore, CN200780049395.2 is improved on the basis of existing technology, discloses a kind of solar cell
Manufacturing method, the solar cell of high characteristic can be manufactured with simple manufacturing process, is on the surface of silicon substrate
The manufacturing method of solar cell with texture, has：Silicon substrate is immersed in containing silver-colored, copper and mickel by the first step
In the oxidant of the metal ion of at least one of ion and the mixed aqueous solution of hydrofluoric acid, formed on the surface of the silicon substrate more
Hole matter silicon layer；The second step, by the silicon substrate through above-mentioned the first step be immersed in using the volume of 50% hydrofluoric acid as 1 when, make
The volume of 60% nitric acid is is etched to form texture in 6 mixed acid mixed above formed；The third step, with alkaline liquid
It is etching through the silicon substrate of the second step.But first, which needs in practical application, before the first step is carried out
Damage during remaining slice on polysilicon chip surface is first removed with alkali；Secondly, the place of the patent the first step, the second step
The reason time is both needed to reach 3 minutes, so that processing time is longer.
A kind of polysilicon chip comprising the suede structure of falling rectangular pyramid and its application in solar cells are disclosed, this is specially
When prepared by profit, it is necessary first to remove damaged layer on surface of silicon slice, and need to coordinate follow-up special process using hydrogen fluoride and nitric acid
Making herbs into wool is carried out, finally also needs to remove metal ion again using hydrochloric acid and hydrogen peroxide.
Invention content
The technical problems to be solved by the invention be to provide a kind of process time is short, the silicon chip after the completion of pre- making herbs into wool can be direct
Flow into the pre- etching method of the Buddha's warrior attendant wire cutting polysilicon chip of conventional polysilicon process for etching.
For solution more than technical problem, the present invention adopts the following technical scheme that：
It is an object of the present invention to provide a kind of pre- etching methods of Buddha's warrior attendant wire cutting polysilicon chip, include the following steps：
Step（1）, at 15 DEG C ~ 30 DEG C, Woolen-making liquid is used to carry out processing 30 ~ 100 seconds to Buddha's warrior attendant wire cutting polysilicon chip with make
Obtain matte；Wherein, in the Woolen-making liquid containing the metal ion of 0.005 ~ 0.2mol/L, the HF of 1 ~ 1.5 mol/L, 0.9 ~
The oxidant of 1.2mol/L；
Step（2）, to use mass concentration be 20% ~ 67% salpeter solution to through step（1）At treated polysilicon chip
10 ~ 80 seconds are managed to remove the metal ion on polysilicon chip surface；Alternatively, using the mixed solution of ammonium hydroxide and hydrogen peroxide to through step
（1）Treated, and polysilicon chip is handled, wherein, the matter of ammonium hydroxide and the hydrogen peroxide described in the mixed solution
Amount concentration independently is 20% ~ 40%, and the mass concentration ratio of ammonium hydroxide and the hydrogen peroxide described in the mixed solution is
1：1~2.
Preferably, step（1）In, the metal ion is one kind or more in silver ion, copper ion, nickel ion
Kind.
It is further preferred that step（1）In, when the metal ion is in silver ion, copper ion, nickel ion
At two kinds, the total concentration of the metal ion is 0.005 ~ 0.2mol/L, and the concentration ratio of the metal ion described in two kinds is 1：1
~10。
Preferably, step（1）In, the metal ion in the mixed solution is fed intake in the form of metal salt.
Preferably, step（1）In, the oxidant is H2O2And/or HNO3。
Preferably, step（1）In, the reaction temperature is 20 DEG C ~ 25 DEG C, and the reaction time is 60 ~ 70 seconds.
Preferably, step（2）Reaction temperature for 35 DEG C ~ 45 DEG C, the reaction time is 50 ~ 70 seconds.
Preferably, step（2）In, the mass concentration of the salpeter solution is 45% ~ 50%.
Preferably, the pre- etching method further includes step（1）And step（2）Between water-washing step, step（2）It
Water-washing step afterwards.
It is further preferred that the pre- etching method further includes step（2）The drying or air-dried after water-washing step afterwards
Step.
The present invention prepares one layer of coarse matte by Woolen-making liquid on Buddha's warrior attendant wire cutting polysilicon chip surface, cuts diamond wire
The degree of injury for cutting polysilicon chip surface is substantially at same level, and reaction is provided using conventional polysilicon process for etching to be follow-up
Basis.
After the completion of this technique, Buddha's warrior attendant wire cutting polysilicon chip surface is in coarse surface topography, is uniformly distributed in silicon chip table
Face, reflectivity are 5% ~ 12%.
For silicon chip after the completion of this technique after the processing of conventional polycrystalline process for etching, reflectivity is 14% ~ 30%, and can basis
It needs to be adjusted.
Due to the implementation of above technical scheme, the present invention has the following advantages that compared with prior art：
This technological process is simple, and with existing conventional polycrystalline battery process matching degree height, workshop can without carrying out extensive change
To realize；Silicon chip after the completion of this technique flows directly into conventional polycrystalline process for etching, can prepare the sub-micron for meeting industry requirement
Grade matte；
The matte that this technique is prepared on Buddha's warrior attendant wire cutting polysilicon chip surface is obtained with mortar cutting silicon chip using sour process for etching
Matte it is basically identical, no stria and brilliant flower problem；
The matte reflectivity that this process Buddha's warrior attendant wire cutting polysilicon chip obtains is adjusted, with battery workshop producing line process matching
After can increase substantially cell piece efficiency.
Description of the drawings
Attached drawing 1 is the microscopic appearance figure of silicon chip surface made from embodiment 1；
Attached drawing 2 is the test reflectance curve figure of silicon chip surface made from embodiment 1.
Specific embodiment
With reference to specific embodiment, the present invention will be further described in detail, but the present invention is not limited to following implementations
Example.The implementation condition used in embodiment can do further adjustment according to specifically used different requirements, the implementation being not specified
Condition is the normal condition in the industry.What those of ordinary skill in the art were obtained without making creative work
All other embodiment, shall fall within the protection scope of the present invention.
The commercially available acquisition of agents useful for same of the present invention.
Embodiment 1：
Step 1：Using HF and HNO3As reaction solution, silver ion is used as catalyst, by a concentration of 1.17 mol/L of HF
, HNO3A concentration of 1.11 mol/L, Ag+A concentration of 0.12mol/L be configured to Woolen-making liquid, by Buddha's warrior attendant wire cutting polysilicon chip
It is immersed in Woolen-making liquid, reaction temperature is 25 DEG C, reaction time 60s.
Step 2：The remaining acid solution of silicon chip surface is cleaned up using deionized water after the completion of step 1, carries out step 3.
Step 3：Use HNO3As reaction liquid, mass concentration 50%, temperature is 40 DEG C, scavenging period 60s.
Step 4：It is made among polysilicon using the chemicals of deionized water cleaning silicon chip remained on surface after the completion of step 3
Product.
The surface topographies of intermediate products made from the present embodiment as shown in Figure 1, reflectance curve as shown in Fig. 2, reaction is rotten
It is 3 microns to lose depth.It can be seen from figure 1 that surface texture made from the present embodiment is mixed and disorderly unordered nanometer linear structure.
Embodiment 2：
Step 1：Using HF and HNO3As reaction solution, silver ion is used as catalyst, by a concentration of 1.17mol/L of HF,
HNO3A concentration of 1.11mol/L, Ag+A concentration of 0.12mol/L be configured to Woolen-making liquid, by Buddha's warrior attendant wire cutting polysilicon chip soak
Enter into Woolen-making liquid, reaction temperature is 25 DEG C, reaction time 60s.
Step 2：The remaining acid solution of silicon chip surface is cleaned up using deionized water after the completion of step 1, carries out step 3.
Step 3：Use HNO3As reaction liquid, mass concentration 50%, temperature is 40 DEG C, scavenging period 60s.
Step 4：It is made among polysilicon using the chemicals of deionized water cleaning silicon chip remained on surface after the completion of step 3
Product.
Step 5：In silicon chip input conventional polycrystalline acid etching device after the completion of step 4, the dense of conventional Woolen-making liquid is controlled
Degree is than being HF:HNO3:H2O=1:7:18th, thermometer temperature is 6 DEG C, wheel speeds 2.4m/min, and the duplicate removal of reaction is 0.05g,
Silicon chip surface reflectivity is 21% after processing.
Embodiment 3：
Step 1：Using HF and HNO3As reaction solution, silver ion is used as catalyst, by a concentration of 1.17mol/L of HF,
HNO3A concentration of 1.11mol/L, Ag+A concentration of 0.12mol/L be configured to Woolen-making liquid, by Buddha's warrior attendant wire cutting polysilicon chip soak
Enter into Woolen-making liquid, reaction temperature is 25 DEG C, reaction time 60s.
Step 2：The remaining acid solution of silicon chip surface is cleaned up using deionized water after the completion of step 1, carries out step 3.
Step 3：Use HNO3As reaction liquid, mass concentration 50%, temperature is 40 DEG C, scavenging period 60s.
Step 4：It is made among polysilicon using the chemicals of deionized water cleaning silicon chip remained on surface after the completion of step 3
Product.
Step 5：In silicon chip input conventional polycrystalline acid etching device after the completion of step 4, the dense of conventional Woolen-making liquid is controlled
Degree is than being HF:HNO3:H2O=1:7:18th, thermometer temperature is 7 DEG C, wheel speeds 2.2m/min, the duplicate removal 0.1g of reaction, place
Silicon chip surface reflectivity is 24% after reason.
Embodiment 4：
Step 1：Using HF and HNO3As reaction solution, silver ion is used as catalyst, by a concentration of 1.17mol/L of HF,
HNO3A concentration of 1.11mol/L, Ag+A concentration of 0.12mol/L be configured to Woolen-making liquid, by Buddha's warrior attendant wire cutting polysilicon chip soak
Enter into Woolen-making liquid, reaction temperature is 25 DEG C, reaction time 60s.
Step 2：The remaining acid solution of silicon chip surface is cleaned up using deionized water after the completion of step 1, carries out step 3.
Step 3：Use HNO3As reaction liquid, mass concentration 50%, temperature is 40 DEG C, scavenging period 60s.
Step 4：It is made among polysilicon using the chemicals of deionized water cleaning silicon chip remained on surface after the completion of step 3
Product.
Step 5：In silicon chip input conventional polycrystalline acid etching device after the completion of step 4, by controlling conventional Woolen-making liquid
Concentration ratio be HF:HNO3:H2O=1:7:18th, thermometer temperature is 8 DEG C, wheel speeds 2.0m/min, by the duplicate removal control of reaction
0.2g is made as, silicon chip surface reflectivity is 28% after processing.
Embodiment 5：
Step 1：Using HF and HNO3As reaction solution, silver ion is used as catalyst, by a concentration of 1.17mol/L of HF,
HNO3A concentration of 1.11mol/L, Ag+A concentration of 0.12mol/L be configured to Woolen-making liquid, by Buddha's warrior attendant wire cutting polysilicon chip soak
Enter into Woolen-making liquid, reaction temperature is 25 DEG C, reaction time 70s.
Step 2：The remaining acid solution of silicon chip surface is cleaned up using deionized water after the completion of step 1, carries out step 3.
Step 3：Use HNO3As reaction liquid, mass concentration 50%, temperature is 40 DEG C, scavenging period 60s.
Step 4：It is made among polysilicon using the chemicals of deionized water cleaning silicon chip remained on surface after the completion of step 3
Product.The surface texture of intermediate products is mixed and disorderly unordered nanometer linear structure, corrosion depth 4um, surface reflectivity 7%.
Step 5：In silicon chip input conventional polycrystalline acid etching device after the completion of step 4, by controlling conventional Woolen-making liquid
Concentration ratio be HF:HNO3:H2O=1:7:18th, thermometer temperature is 7 DEG C, wheel speeds 2.2m/min, the duplicate removal of reaction
0.1g, silicon chip surface reflectivity is 21% after processing.
Embodiment 6：
Step 1：
Using HF and HNO3Solution uses silver ion as catalyst as reaction solution, by a concentration of 1.17mol/L of HF,
HNO3A concentration of 1.11mol/L, concentration of silver ions is configured to Woolen-making liquid for 0.1mol/L, Buddha's warrior attendant wire cutting polysilicon chip soaked
Enter into Woolen-making liquid, reaction temperature is 25 DEG C, reaction time 60s.
Step 2：The remaining acid solution of silicon chip surface is cleaned up using deionized water after the completion of step 1, carries out step 3.
Step 3：Use HNO3As reaction liquid, mass concentration 50%, temperature is 40 DEG C, scavenging period 60s.
Step 4：It is made among polysilicon using the chemicals of deionized water cleaning silicon chip remained on surface after the completion of step 3
Product.The surface texture of intermediate products is mixed and disorderly unordered nanometer linear structure, and corrosion depth is 3.5 microns, surface reflectivity
It is 8%.
Step 5：In silicon chip input conventional polycrystalline acid etching device after the completion of step 4, by controlling conventional Woolen-making liquid
Concentration ratio be HF:HNO3:H2O=1:7:18th, thermometer temperature is 7 DEG C, wheel speeds 2.0m/min, the duplicate removal of reaction
0.15g, silicon chip surface reflectivity is 22% after processing.
Embodiment 7：
Step 1：Using HF and HNO3Solution uses silver ion as catalyst, by a concentration of of HF as reaction solution
1.4mol/L, HNO3A concentration of 0.9mol/L, concentration of silver ions is configured to Woolen-making liquid for 0.1mol/L, and Buddha's warrior attendant wire cutting is more
Crystal silicon chip is immersed in Woolen-making liquid, and reaction temperature is 25 DEG C, reaction time 70s.
Step 2：The remaining acid solution of silicon chip surface is cleaned up using deionized water after the completion of step 1, carries out step 3.
Step 3：Use HNO3As reaction liquid, mass concentration 45%, temperature is 40 DEG C, scavenging period 60s.
Step 4：It is made among polysilicon using the chemicals of deionized water cleaning silicon chip remained on surface after the completion of step 3
Product.The surface texture of intermediate products is mixed and disorderly unordered nanometer linear structure, and corrosion depth is 3.5 microns, surface reflectivity
It is 9%.
Step 5：In silicon chip input conventional polycrystalline acid etching device after the completion of step 4, by controlling conventional Woolen-making liquid
Concentration ratio be HF:HNO3:H2O=1:7:18th, thermometer temperature is 7 DEG C, wheel speeds 2.2m/min, reacts duplicate removal 0.1g,
Silicon chip surface reflectivity is 20% after processing.
The present invention is described in detail above, its object is to allow the personage for being familiar with this field technology that can understand this
The content of invention is simultaneously implemented, and it is not intended to limit the scope of the present invention, all Spirit Essence institutes according to the present invention
The equivalent change or modification of work should all cover within the scope of the present invention.
Claims (10)
1. a kind of pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip, it is characterised in that：Include the following steps：
Step（1）, at 15 DEG C ~ 30 DEG C, Woolen-making liquid is used to carry out processing 30 ~ 100 seconds to Buddha's warrior attendant wire cutting polysilicon chip with make
Obtain matte；Wherein, in the Woolen-making liquid containing the metal ion of 0.005 ~ 0.2mol/L, the HF of 1 ~ 1.5 mol/L, 0.9 ~
The oxidant of 1.2mol/L；
Step（2）, to use mass concentration be 20% ~ 67% salpeter solution to through step（1）At treated polysilicon chip
10 ~ 80 seconds are managed to remove the metal ion on polysilicon chip surface；Alternatively, using the mixed solution of ammonium hydroxide and hydrogen peroxide to through step
（1）Treated, and polysilicon chip is handled, wherein, the matter of ammonium hydroxide and the hydrogen peroxide described in the mixed solution
Amount concentration independently is 20% ~ 40%, and the mass concentration ratio of ammonium hydroxide and the hydrogen peroxide described in the mixed solution is
1：1~2.
2. the pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip according to claim 1, it is characterised in that：Step（1）In,
The metal ion is one or more in silver ion, copper ion, nickel ion.
3. the pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip according to claim 2, it is characterised in that：Step（1）In,
When the metal ion is two kinds in silver ion, copper ion, nickel ion, the total concentration of the metal ion is
0.005 ~ 0.2mol/L, the concentration ratio of the metal ion described in two kinds is 1：1~10.
4. the pre- etching method of the Buddha's warrior attendant wire cutting polysilicon chip according to claims 1 or 2 or 3, it is characterised in that：Step
（1）In, the metal ion in the mixed solution is fed intake in the form of metal salt.
5. the pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip according to claim 1, it is characterised in that：Step（1）In,
The oxidant is H2O2And/or HNO3。
6. the pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip according to claim 1, it is characterised in that：Step（1）In,
The reaction temperature is 20 DEG C ~ 25 DEG C, and the reaction time is 60 ~ 70 seconds.
7. the pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip according to claim 1, it is characterised in that：Step（2）'s
Reaction temperature is 35 DEG C ~ 45 DEG C, and the reaction time is 50 ~ 70 seconds.
8. the pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip according to claim 1, it is characterised in that：Step（2）In,
The mass concentration of the salpeter solution is 45% ~ 50%.
9. the pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip according to claim 1, it is characterised in that：Described is prefabricated
Velvet figures method further includes step（1）And step（2）Between water-washing step, step（2）Water-washing step later.
10. the pre- etching method of Buddha's warrior attendant wire cutting polysilicon chip according to claim 9, it is characterised in that：Described is pre-
Etching method further includes step（2）Drying after water-washing step afterwards or air drying steps.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104962998A (en) * | 2015-07-08 | 2015-10-07 | 中国科学院宁波材料技术与工程研究所 | Diamond wire cutting-based silicon wafer texturing pretreatment method and silicon wafer texturing method |
| CN105576080A (en) * | 2016-01-29 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | Single-surface texturing method for diamond wire cut polycrystalline silicon wafer, and diamond wire cut polycrystalline silicon wafer with single surface textured |
| CN105870263A (en) * | 2016-06-27 | 2016-08-17 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of textured structure of crystalline silicon solar cell |
| CN106549083A (en) * | 2016-06-27 | 2017-03-29 | 苏州阿特斯阳光电力科技有限公司 | A kind of preparation method of crystal silicon solar energy battery suede structure |
| CN107245760A (en) * | 2017-05-10 | 2017-10-13 | 苏州日弈新电子科技有限公司 | The processing method of silicon chip of solar cell |
-
2017
- 2017-12-13 CN CN201711323884.4A patent/CN108130599A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104962998A (en) * | 2015-07-08 | 2015-10-07 | 中国科学院宁波材料技术与工程研究所 | Diamond wire cutting-based silicon wafer texturing pretreatment method and silicon wafer texturing method |
| CN105576080A (en) * | 2016-01-29 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | Single-surface texturing method for diamond wire cut polycrystalline silicon wafer, and diamond wire cut polycrystalline silicon wafer with single surface textured |
| CN105870263A (en) * | 2016-06-27 | 2016-08-17 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of textured structure of crystalline silicon solar cell |
| CN106549083A (en) * | 2016-06-27 | 2017-03-29 | 苏州阿特斯阳光电力科技有限公司 | A kind of preparation method of crystal silicon solar energy battery suede structure |
| CN107245760A (en) * | 2017-05-10 | 2017-10-13 | 苏州日弈新电子科技有限公司 | The processing method of silicon chip of solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 张向宇: "《实用化学手册》", 31 October 2011, 国防工业出版社 * |
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