CN209133464U - Equipment for carrying out surface-texturing to semiconductor substrate - Google Patents
Equipment for carrying out surface-texturing to semiconductor substrate Download PDFInfo
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- CN209133464U CN209133464U CN201820801161.4U CN201820801161U CN209133464U CN 209133464 U CN209133464 U CN 209133464U CN 201820801161 U CN201820801161 U CN 201820801161U CN 209133464 U CN209133464 U CN 209133464U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The utility model relates to a kind of equipment for carrying out surface-texturing to semiconductor substrate, it include: the first technology groove, it is configured to accommodate the first process liquid, and Argent grain is deposited on semiconductor substrate surface by the first process liquid and a large amount of hole comprising Argent grain is formed by the metallic catalyst chemical etching based on silver on the surface of a substrate；Second technology groove is configured to accommodate the second process liquid and carries out alkaline etch to hole by the second process liquid when there are Argent grain, to form the textured surface texture of inverted pyramid type；Cleaning device is configured to implement cleaning to the textured surface texture of inverted pyramid type by cleaning liquid to remove Argent grain.Inverted pyramid type textured surfaces can be obtained in a simple and efficient manner according to the utility model, have extremely low reflection loss and efficient solar battery to manufacture.
Description
Technical field
The utility model relates to a kind of equipment for carrying out surface-texturing to semiconductor substrate.
Background technique
The efficiency of solar battery depends on reflection loss.In order to make reflection loss minimum and optimization efficiency, band is manufactured
There is the semiconductor substrate of textured surface texture.If silicon substrate passes through particularly effective method to this semiconductor substrate in other words
Processing, then it is for example referred to as black silicon.In order to particularly effectively realize black silicon texturing or black silicon making herbs into wool, it is known that using for example
Metallic catalyst chemical etching method (metal catalyst chemical etching, english abbreviation: MCCE).
Monocrystalline silicon piece texture techniques well known in the prior art are, for example, to pass through alkaline solution (KOH, NaOH) and isopropyl
Alcohol or additive generate the positive pyramid surface texture of random arrangement.Herein it is generally necessary to the longer process time, for example, right
The process time greater than 15 minutes is needed for additive, and the process time greater than 30 minutes is needed for isopropanol,
Therefore the monocrystalline texturing method usually carries out in batch-type equipment.Prepared pyramid size can usually be less than
Variation in 1 μm to more than 5 μm of wide scope, is usually about 1 μm at present.In addition, these already known processes are usually fairly expensive,
Cost is mainly caused by the cost of additive.
Therefore, it is necessary to seek a kind of alternative solution, which can reduce manufacturing cost, provide with more high-throughput
Equipment, be greater than 8000 tablets hs, thus reduce equipment size (relative to silicon tablets h/device area), in addition also
Semiconductor substrate that can be in particular thin provides higher performance, i.e. reduction frontside reflectivity and increase light captures.
It is known that inverted pyramid type surface texture can be used to substitute the positive pyramid surface texture of random arrangement.For making
The method of standby inverted pyramid type surface texture for example, first for example by the surface texture of photoetching process formation rule, then
Alkali etching processing is carried out, i.e., obtains inverted pyramid type surface texture using anisotropic etching behavior.It has also been demonstrated that can
Texturing is carried out to semiconductor substrate in a step process by using the MCCE method of Ni metal, to prepare inverted pyramid type surface
Structure.In addition, knowing that a kind of utilization MCCE method forms inverted pyramid type porous surface on the polysilicon from CN103456804A
The method of nanometer texture.
It is golden compared with the positive pyramid Surface Texture of the random arrangement prepared by the alkaline monocrystalline texturing of standard
Word tower Surface Texture shows much better optical property in terms of reflecting with light capture.The preferable random row obtained so far
The inverted pyramid type Surface Texture of cloth the result is that by using based on Cu MCCE technique, be used in 50 DEG C of process warm
HF:H under degree2O2What etching solution obtained.The major defect of the technique is: the process time about 15 minutes；It is used in 50 DEG C
H2O2Etching solution can be along with acceleration and uncontrolled H2O2Volatilization, therefore stabilization is difficult to ensure in industrial application
Texture techniques；It is additionally based on the receiving in photovoltaic products manufacture due to risk that Cu pollutes of the MCCE etching solution of Cu
Degree is limited.
Utility model content
The technical problem to be solved by the present invention is to overcome the defect of the above prior art, provide a kind of improved
Equipment and the improved side that surface-texturing is carried out to semiconductor substrate of one kind of surface-texturing are carried out to semiconductor substrate
Method can obtain the inverted pyramid type textured surfaces structure of semiconductor substrate, in a simple and efficient manner to manufacture band
There are extremely low reflection loss and efficient solar battery.
It is above by the equipment solution according to the utility model, i.e., a kind of for carrying out surface-texturing to semiconductor substrate
Equipment, the equipment includes: the first technology groove, is configured to accommodate the first process liquid, and be configured to by described
Argent grain is deposited on the surface of the semiconductor substrate and by the metallic catalyst chemistry based on silver by the first process liquid
Etching forms a large amount of hole on the surface of a semiconductor substrate, includes the Argent grain in described hole；Second technology groove, quilt
It is configured to receive the second process liquid, and is configured to there are the Argent grain by second process liquor
Body carries out alkaline etch to described hole, to form the textured surface texture of inverted pyramid type of the semiconductor substrate；Clearly
Clean device, be configured to by cleaning liquid to the inverted pyramid type textured surface texture implementation clean at least once with
Remove the Argent grain.
Inventor surprisingly it has been found that, Argent grain be present in semiconductor substrate surface, exactly be present in semiconductor lining
In the hole of bottom surface or in the case where when carrying out alkaline etch or alkaline texturing to semiconductor substrate, texture obtained
Changing surface texture not being is the positive pyramid textured surfaces structure for the random arrangement being usually formed under similar conditions, but
The inverted pyramid type textured surfaces structure of random arrangement.That is, during alkaline etch or alkaline texturing, Argent grain
Presence for obtain inverted pyramid type textured surfaces structure for be essential.
Preferably, equipment according to the present utility model further includes third technology groove, is configured to accommodate third process liquid,
And it is configured to there is no the Argent grain by the third process liquid to being clean inverted pyramid
The textured surface texture of type carries out further alkaline etch, to form the textured surface texture of inverted pyramid type of amplification.
The textured surface texture of inverted pyramid type is enabled to further increase size in the process.
Term " first " technology groove, " second " technology groove and " third " technology groove are only used for difference technology groove, furthermore do not make
Limited understanding.Especially can before technology groove, between and/or arrange other slot, such as clean tank and/or flushings later
Slot.Correspondingly, term " first " process liquid, " second " process liquid and " third " process liquid are only used for difference process liquor
Body, furthermore being not construed as limiting property understands.
In the first technology groove, Argent grain is deposited on to the surface of the semiconductor substrate by first process liquid
Above and by the metallic catalyst chemical etching based on silver a large amount of hole, described hole are formed on the surface of a semiconductor substrate
In include the Argent grain.Preferably, described hole have 50nm between 300nm, especially 100nm between 200nm most
Large scale.Advantageously, Argent grain deposition and drilling (i.e. etching hole process) are realized in the same processing step, and silver
Etch-rate greatly improved in the deposition of grain on a semiconductor substrate.In the processing step, the surface of semiconductor substrate is kept
Hydrophily, therefore be easy to be soaked by the first process liquid.
When the semiconductor substrate is with the surface texture for example formed by sawing, first technology groove is configured to
In addition also by first process liquid remove it is described by sawing formed surface texture, preferably remove 0.5 to 4.0 μm/
The surface texture formed by sawing in face.According to the utility model it is found that if the first technology groove includes such first technique
Liquid, the first process liquid are both suitable for removing the surface texture for example formed by sawing, are also suitable for depositing on a semiconductor substrate
Argent grain simultaneously generates a large amount of hole by metallic catalyst chemical etching, then can it is simpler and more effectively realize have compared with
Low reflection loss and efficient textured surface structure.Thus sawed in other words by the removal saw damage of the first process liquid
The surface texture to be formed is cut, and deposits Argent grain on a semiconductor substrate and is drilled out largely by metallic catalyst chemical etching
Hole.This especially only in the first technology groove in other words only by the first process liquid, i.e. unique process pool in other words
It is carried out in processing step.It is especially removed by the first process liquid due to diamond fretsaw technique (English: DWS, i.e. Diamond
Wire Saw) caused by impaired by the sawing in other words surface texture of surface texture that is formed by sawing.
Preferably, first process liquid includes hydrofluoric acid (HF), nitric acid (HNO3) and silver nitrate (AgNO3).That is institute
The first process liquid especially aqueous solution is stated, it includes hydrofluoric acid, nitric acid and silver ions.The aqueous solution especially has distilled water
As matrix.The silver ion in hydration silver ion form is preferably comprised in the first process liquid, wherein silver is with the shape of silver nitrate
Aqueous solution is added in formula.Silver works as catalyst in the first process liquid and locally accelerates wet chemical etch.With
This constitutes etching hole in the region there are silver metal particles on the surface of a semiconductor substrate and etches hole in other words.It is preferred that
Ground, first process liquid include the hydrofluoric acid of 10 weight % to 25 weight %, especially 12 weight % to 20 weight %, 12
The nitric acid and 0.0001 weight % of weight % to 25 weight %, especially 15 weight % to 22 weight % are to 0.05 weight %, outstanding
It is silver nitrate of the 0.001 weight % to 0.015 weight %.
Preferably, first process liquid includes less than 5 weight %, particular less than 1 weight % and in particular 0 weight
Measure the hydrogen peroxide of %.Hydrogen peroxide influences desired metallic catalyst chemical etching.First process liquid is preferably free of
Hydrogen peroxide.Optimize process lasting time and technology stability with this, and simplify the structure of the equipment, because for described
The operation of equipment needs for example less process chemistries.
Preferably, first process liquid has temperature T1, in which: and 6 DEG C≤T1≤40 DEG C, especially 8 DEG C≤T1≤
30℃.It can be realized desired metal deposit and metallic catalyst chemical etching by the temperature T1 and make the process time most
Optimization.
Preferably, the equipment is configured to stop semiconductor substrate 0.5-4 minutes in the first process liquid.It is logical
Crossing the setting can be realized desired metal deposit and metallic catalyst chemical etching.
In the second technology groove, by second process liquid to described hole there are the Argent grain
Alkaline etch is carried out, to form the textured surface texture of inverted pyramid type of the semiconductor substrate.Under alkaline condition, institute
Hole is stated by anisotropic etching to form inverted pyramid type surface texture, wherein Argent grain should serve as anisotropy quarter
Catalyst during erosion, therefore observed higher etch-rate near Argent grain.In the growth of inverted pyramid structure
Period, these inverted pyramid structures can be being fused together in other words for interconnection.Preferably, the inverted pyramid type texturing
Surface texture be made up of the first construction component, wherein at least 70% the first construction component have 50nm to 600 nm it
Between, especially 150nm to the full-size between 400nm.Preferably at least 80%, especially at least 90% the first construction component has
The full-size.The full-size is especially parallel to the maximum width of substrate plane and/or perpendicular to substrate plane
Maximum length.
Preferably, second process liquid includes akaline liquid and surface active agent, and the akaline liquid especially includes
Potassium hydroxide (KOH) and/or sodium hydroxide (NaOH).The surface active agent can be various for improving surface wettability
Surfactant solution, such as available commercially from: Changzhou ShiChuang Energy Technology Co., Ltd., model TS 4, TS 5；ICB is limited
Company, model CellTex；GP solar company, model Alka-Tex and Alka-Tex.2+.Preferably, described second
Process liquid includes the potassium hydroxide or 0.01 of 0.01 weight % to 4 weight %, especially 0.05 weight % to 1.5 weight %
The sodium hydroxide of weight % to 3 weight %, especially 0.025 weight % to 1.5 weight % and include 0.1 weight % to 5 weights
Measure the surface active agent of %, especially 0.2 weight % to 2.5 weight %.
Preferably, second process liquid has temperature T2, in which: and 50 DEG C≤T2≤100 DEG C, especially 55 DEG C≤
T2≤95℃.The temperature T2 can be realized desired for the textured alkaline etch of inverted pyramid type and making the process time
It optimizes.
Preferably, the equipment is configured to stop semiconductor substrate 0.2-2 minutes in the second process liquid.It is logical
Cross the setting can be realized it is desired for the textured alkaline etch of inverted pyramid type.
Then in cleaning device, effectively and reliably the textured surface of inverted pyramid type is tied by cleaning liquid
Structure is implemented to be cleaned at least once to remove the Argent grain and silver ion that are located in the etching hole or substrate surface, so as to one
Aspect terminates the alkaline etch and does not continue to carry out the texturing of inverted pyramid type, on the other hand avoids the silver ion retained
The efficiency of the caused solar battery made of the semiconductor substrate reduces.
Preferably, cleaning liquid is the aqueous solution comprising nitric acid.The aqueous solution preferably has distilled water as matrix.It is excellent
Selection of land, the cleaning liquid include nitric acid, especially 10 weight % to 70 weight %, especially 20 weight % to 70 weight %'s
Nitric acid.Preferably, the cleaning liquid has temperature TR, in which: 20 DEG C≤TR≤65 DEG C, especially 23 DEG C≤TR≤60 DEG C.
Preferably, the equipment is configured to stop semiconductor substrate 0.5-3 minutes in cleaning liquid.It can by the setting
Simply and effectively remove Argent grain and silver ion.
Preferably, the cleaning device has the clean tank with cleaning liquid, wherein when the equipment is chain equipment
When, there are the cleaning device multiple spray units successively arranged to be used to spray cleaning on the textured surface texture
Liquid, the multiple spray unit successively arranged especially is arranged in inside clean tank and/or top.Pass through the setting
Particularly simple it can be effectively removed Argent grain and silver ion.
Preferably, the equipment further includes that at least one is set up directly on the first technology groove, the second technology groove and/or cleaning
Flusher after device is configured to flushing liquid to from the first technology groove, the second technology groove and/or cleaning device
The semiconductor substrate of output is rinsed.The flushing liquid is preferably water, especially deionized water.The flusher can be with
It is fountain device or immersion device.Preferably, in the case where fountain device, the flusher includes at least one
For in the semiconductor substrate be sprayed liquid spray unit, at least one described spray unit be especially arranged in
Inside a few flushed channel and/or top.In the case where immersion device, flushing liquid is arranged to for example pass through circulating pump
Or compressed dry air bubble is recycled.
Preferably, the equipment further includes acid bath groove, the flusher after being sequentially arranged at the flusher of cleaning device
And drying device, the acid bath groove are configured to the aqueous solution being preferably made of hydrofluoric acid and hydrochloric acid to defeated from cleaning device
Out and it is subsequent with flushing liquid rinse semiconductor substrate post-processed, the flusher is configured to use flushing liquor
Body is rinsed the semiconductor substrate through the post-processing, and the drying device is configured to carry out the semiconductor substrate
It is dry.
In third technology groove, in the case where the Argent grain is not present by third process liquid to being clean down
The textured surface texture of pyramid carries out further alkaline etch, to form the textured surface of inverted pyramid type of amplification
Structure.Preferably, the textured surface texture of inverted pyramid type of amplification is made up of the second construction component, and wherein at least 70%
The second construction component have 250nm between 1200 nm, especially 400nm to the full-size between 1000nm.Preferably at least
80%, especially at least 90% the first construction component has the full-size.The full-size is especially parallel to substrate
The maximum width of plane and/or maximum length perpendicular to substrate plane.It thus ensures with extremely low reflection loss
Textured surface texture.
Preferably, the third process liquid includes akaline liquid and surface active agent, and the akaline liquid especially includes
Potassium hydroxide (KOH) and/or sodium hydroxide (NaOH), the surface active agent can be various for improving surface wettability
Surfactant solution, such as available commercially from: Changzhou ShiChuang Energy Technology Co., Ltd., model TS 4, TS 5；ICB is limited
Company, model CellTex；GP solar company, model Alka-Tex and Alka-Tex.2+.Preferably, the third
Process liquid includes the potassium hydroxide or 0.05 weight of 0.1 weight % to 4 weight %, especially 0.5 weight % to 3.5 weight %
Measure % to 3 weight %, especially 0.25 weight % to 2 weight % sodium hydroxide and include 0.1 weight % to 5 weight %,
The surface active agent of especially 0.3 weight % to 3.5 weight %.Preferably, the third process liquid has temperature T3,
In: 50 DEG C≤T3≤100 DEG C, especially 65 DEG C≤T3≤95 DEG C.Preferably, the equipment is configured to that semiconductor substrate is made to exist
It is stopped 1-5 minutes in third process liquid.Inverted pyramid type surface texture can simply and effectively be increased by above-mentioned setting
Size, to form the textured surface texture of inverted pyramid type of amplification.
In another embodiment of the utility model, the equipment further includes being set up directly on after third technology groove
Flusher, the flusher are configured to rush the semiconductor substrate exported from third technology groove with flushing liquid
It washes；Preferably, the flushing liquid is water, especially deionized water.
In another embodiment of the utility model, the equipment further includes the flushing dress for being sequentially arranged at third technology groove
Acid bath groove, flusher and drying device after setting, the acid bath groove are configured to preferably by hydrofluoric acid and hydrochloric acid group
At aqueous solution to it is being exported from third technology groove and it is subsequent with flushing liquid rinse semiconductor substrate post-process, institute
It states flusher to be configured to be rinsed the semiconductor substrate through the post-processing with flushing liquid, the drying device quilt
It is configured to that the semiconductor substrate is dried.
In a kind of embodiment of the utility model, the equipment can be chain equipment, be provided with for continuous
The conveying device of ground conveying semiconductor substrate.Can be generated with this in simple and efficient mode largely has desired texturing
Surface texture semiconductor substrate.Preferably there is the equipment at least one partly to lead for continuously conveying along conveying direction
The conveying device of body substrate.At least one described conveying device at least extends up to the second technology groove from first technology groove,
The cleaning device after being arranged in second technology groove preferably is extended up to from first technology groove, and especially from institute
It states the first technology groove and extends up to the third technology groove.Semiconductor substrate may be implemented along defeated at least one described conveying device
Send direction continuous horizontal conveying.In the first embodiment, the equipment has a conveying device, and conveying device is partly leading
Body substrate continuously and is horizontally conveyed from first technology groove up to the third technology groove.In a second embodiment,
There are two conveying devices for the equipment tool, wherein the first conveying device is semiconductor substrate continuously and horizontally from described
The conveying of first technology groove is until be arranged in the cleaning device after second technology groove, and the second conveying device is semiconductor
Substrate continuously and is horizontally conveyed from the cleaning device up to the third technology groove.In the first and second conveying devices
Between, semiconductor substrate for example manually or by handling device conveys.
Preferably, the chain equipment further includes directly being located at the cleaning along the conveying direction of the semiconductor substrate
The flusher of device is located at the mechanical transfer unit after the cleaning device, the mechanical transfer later or directly
Unit is configured to being rinsed after being cleaned by the cleaning liquid or the semiconductor substrate without flushing with wet
State is directly to another chain equipment transfer for post-processing.
Preferably, the chain equipment further includes directly being located at the third along the conveying direction of the semiconductor substrate
Flusher after technology groove is located at the mechanical transfer unit after the third technology groove, the machine later or directly
Tool formula transfer unit be configured to by by the third process liquid carry out after further alkaline etch through rinsing or not
Semiconductor substrate through rinsing is with hygrometric state directly to another chain equipment transfer for post-processing.
It may include rear treating groove, such as acid bath groove (HF and HCl) in the existing chain equipment for post-processing.It is existing
For post-processing chain equipment in treatment process for example can successively include: input, deionized water be sprayed, acid bath,
Deionized water is sprayed, dry and output.It is only used for clearly in rear treating groove by post-processing the subsequent post-processing of liquid
The clean textured surface of inverted pyramid type obtained, does not remove silicon during this period.It can by the mechanical transfer unit
The rear treating groove in existing equipment will be transferred to hygrometric state through the cleaning device clean semiconductor substrate, to make according to this
The equipment and existing equipment of utility model are integrated into a set of equipment, i.e., without partly being led between two sets of originally separated equipment
The tradition unloading of body substrate and loading.In addition, through the clean semiconductor substrate of the cleaning device without drying, but with hygrometric state
It is conveyed between two sets of originally separated equipment.
In a kind of embodiment of the utility model, the equipment is batch-type equipment, is provided in batches
Carry and convey the bracket of semiconductor substrate.Here, above-mentioned all technology grooves, cleaning device and flusher may be structured to
Immersion device, wherein all process liquids, cleaning liquid and flushing liquid can be arranged to for example through circulating pump or compression
Dry air bubble is recycled.In one embodiment, be configured to will be by using the bracket for the batch-type equipment
It is described to clean being rinsed after liquid is cleaned or the semiconductor substrate without flushing with hygrometric state directly to for post-processing
Another batch-type equipment transfer.In one embodiment, the batch-type equipment further includes being arranged in the cleaning device
Flusher after drying device, the drying device is configured to exporting from the cleaning device and then use
The semiconductor substrate that flushing liquid rinses sufficiently dry, so that dried multiple semiconductor substrates are when being stacked
It will not be connected with each other because of moisture remaining in the surface texture.These semiconductor substrates being stacked can be convenient for manual
Ground is transported to the existing equipment position for post-processing or place to be handled, such as successively using handbarrow
Including input, deionized water is sprayed, and acid bath, deionized water is sprayed, dry and output.
In preferred embodiments of the present invention, the equipment is used for polycrystalline and single crystal semiconductor substrate, especially
It is single crystal semiconductor substrate, more particularly monocrystalline substrate progress surface-texturing.
On the other hand, the utility model provides one kind and carries out in equipment according to the present utility model to semiconductor substrate
The method of surface-texturing comprising method and step: Argent grain is deposited on the semiconductor substrate by the first process liquid
Surface on and by based on silver metallic catalyst chemical etching a large amount of hole is formed on the surface of the semiconductor substrate
Hole includes the Argent grain in described hole；By the second process liquid to the hole in the presence of Argent grain
Hole carries out alkaline etch, to form the textured surface texture of inverted pyramid type of the semiconductor substrate；By cleaning liquid
The implementation of the inverted pyramid type textured surface texture is cleaned at least once to remove the Argent grain.In the method
Advantage is corresponding with the above-mentioned advantage of the equipment according to the utility model.It in the method especially can also be by practical according to this
At least one feature of novel equipment is improved.
Preferably, this method further includes, in the case where the Argent grain is not present, by third process liquid to through clear
The textured surface texture of the clean inverted pyramid type carries out further alkaline etch, is knitted with forming the inverted pyramid type of amplification
The surface texture of structure.
First process liquid includes hydrofluoric acid, nitric acid and silver ion.Preferably, first process liquid includes 10
The hydrofluoric acid of weight % to 25 weight %, especially 12 weight % to 20 weight %, 12 weight % to 25 weight %, especially 15
The nitric acid and 0.0001 weight % of weight % to 22 weight % is to 0.05 weight %, especially 0.001 weight % to 0.015 weight
Measure the silver nitrate of %.Preferably, first process liquid includes less than 5 weight %, particular less than 1 weight % and especially
For the hydrogen peroxide (H2O2) of 0 weight %.Preferably, first process liquid has temperature T1, in which: 6 DEG C≤T1≤40
DEG C, especially 8 DEG C≤T1≤30 DEG C.Preferably, semiconductor substrate is stopped 0.5-4 minutes in the first process liquid.Wherein
Preferably, the hole formed by the first process liquid have 50nm between 300nm, especially 100nm is between 200nm
Full-size.In some embodiments, the semiconductor substrate has the surface texture formed by sawing, by described first
Process liquid simultaneously remove it is described by sawing formed surface texture, preferably remove 0.5-4.0 μm/face by sawing formed
Surface texture.
Preferably, second process liquid includes akaline liquid and surface active agent, and the akaline liquid especially includes
Potassium hydroxide (KOH) and/or sodium hydroxide (NaOH).The surface active agent can be various for improving surface wettability
Surfactant solution, such as available commercially from: Changzhou ShiChuang Energy Technology Co., Ltd., model TS 4, TS 5；ICB is limited
Company, model CellTex；GP solar company, model Alka-Tex and Alka-Tex.2+.Preferably, described second
Process liquid includes the potassium hydroxide or 0.01 of 0.01 weight % to 4 weight %, especially 0.05 weight % to 1.5 weight %
The sodium hydroxide of weight % to 3 weight %, especially 0.025 weight % to 1.5 weight % and include 0.1 weight % to 5 weights
Measure the surface active agent of %, especially 0.2 weight % to 2.5 weight %.Preferably, second process liquid has temperature
T2, in which: 50 DEG C≤T2≤100 DEG C, especially 55 DEG C≤T2≤95 DEG C.Stop semiconductor substrate in the second process liquid
It stays 0.2-2 minutes.It thus ensures and effectively forms the textured surface texture of inverted pyramid type.Preferably, the gold
The textured surface texture of word tower is made up of the first construction component, and wherein at least 70% the first construction component has 50nm
To between 600nm, especially 150nm to the full-size between 400nm.Preferably at least 80%, especially at least 90% the first structure
Element is made with the full-size.The full-size is especially parallel to the maximum width of substrate plane and/or vertical
In the maximum length of substrate plane.
Preferably, the cleaning liquid includes the nitric acid of nitric acid, especially 20 weight % to 65 weight %.Preferably, described
Cleaning liquid especially has temperature TR, in which: 20 DEG C≤TR≤65 DEG C, especially 23 DEG C≤TR≤60 DEG C.Preferably, make partly to lead
Body substrate stops 0.5-3 minutes in cleaning liquid.Thus ensure efficiently removal Argent grain and silver ion.
Preferably, the method also includes with flushing liquid to from the first process liquid, the second process liquid and/or cleaning
The semiconductor substrate exported in liquid is rinsed；Wherein the flushing liquid is preferably water, especially deionized water；It is preferred that
Ground, described rinse is that fountain or immersion rinse.
Preferably, the method also successively includes with the aqueous solution being preferably made of hydrofluoric acid and hydrochloric acid to from cleaning solution
The semiconductor substrate rinsed with flushing liquid export in body and subsequent is post-processed, with flushing liquid to after described
The semiconductor substrate of reason is rinsed and the semiconductor substrate is dried.
Preferably, the method also includes in the case where the Argent grain is not present, by third process liquid to warp
The clean textured surface texture of the inverted pyramid type carries out further alkaline etch, to form the inverted pyramid type of amplification
Textured surface texture.Preferably, the textured surface texture of inverted pyramid type of amplification is made up of the second construction component,
Wherein at least 70% the second construction component have 250nm between 1200nm, especially 400nm to the maximum between 1000nm
Size.Preferably, the third process liquid includes akaline liquid and surface active agent, and the akaline liquid especially includes hydrogen-oxygen
Change potassium (KOH) and/or sodium hydroxide (NaOH), the surface active agent can be various for improving the surface of surface wettability
Activator solution, such as available commercially from: Changzhou ShiChuang Energy Technology Co., Ltd., model TS 4, TS 5；ICB Co., Ltd,
Model CellTex；GP solar company, model Alka-Tex and Alka-Tex.2+.Preferably, the third process liquor
Body includes the potassium hydroxide or 0.05 weight % to 3 of 0.1 weight % to 4 weight %, especially 0.5 weight % to 3.5 weight %
The sodium hydroxide of weight %, especially 0.25 weight % to 2 weight % and include 0.1 weight % to 5 weight %, especially
The surface active agent of 0.3 weight % to 3.5 weight %；Preferably, the third process liquid has temperature T3, in which: 50 DEG C
≤ T3≤100 DEG C, especially 65 DEG C≤T3≤95 DEG C.Preferably, semiconductor substrate is made to stop 1-5 in third process liquid
Minute.Preferably, the method also includes being rushed with flushing liquid to the semiconductor substrate exported from third process liquid
It washes；Preferably, the flushing liquid is water, especially deionized water.Preferably, the method also successively includes: with preferably
The aqueous solution being made of hydrofluoric acid and hydrochloric acid is to half rinsed with flushing liquid export from third process liquid and subsequent
Conductor substrate is post-processed, and is rinsed with flushing liquid to the semiconductor substrate through the post-processing, and partly lead to described
Body substrate is dried.
Preferably, the method step is implemented in chain equipment, and the semiconductor substrate is conveyed continuously.?
In a kind of embodiment, after being cleaned in the chain equipment by the cleaning liquid through rinsing or without punching
The semiconductor substrate washed is with hygrometric state directly to another chain equipment transfer for post-processing.It in another embodiment, will be
In the chain equipment by the third process liquid carry out after further alkaline etch through rinsing or without flushing
Semiconductor substrate is with hygrometric state directly to another chain equipment transfer for post-processing.
In another embodiment, the method step is implemented in batch-type equipment, and the semiconductor substrate quilt
It conveys in batches.In another embodiment, after being cleaned in the batch-type equipment by the cleaning liquid
Rinsed or semiconductor substrate without flushing with hygrometric state directly to another batch-type equipment transfer for post-processing.Another
In one embodiment, the semiconductor substrate rinsed with flushing liquid export from the cleaning liquid and subsequent is filled
Divide drying, so that dried multiple semiconductor substrates will not be because of moisture remaining in the surface texture when being stacked
And it is connected with each other.
Preferably, the semiconductor substrate is single crystal semiconductor substrate, especially monocrystalline substrate.
Compared to the prior art, the advantages of device and method of the utility model, includes:
The MCCE technique based on Ag is used, without the risk of Cu pollution；
Using without H2O2Etching solution HF/HNO3, the use of the etching solution is well-known in industrial application
Stable technique；
Total etching duration can be less than 5 minutes, be not only suitable for the high-throughput equipment for being suitable for batch-type again of chain type；
Technological temperature is no more than 70 DEG C, reduces the stress to hardware, improves technology controlling and process；
Pyramid size and depth are adjusted by process recipe, capture behavior so as to cause different reflectivity and light,
Therefore it is highly suitable for different solar battery structures.
Self-evidently, mention before and later also by the feature of elaboration may not only in the combination provided and
And can also be used in other combinations, only without departing substantially from include claims protection scope in the utility model model
It encloses.
The advantages of illustrating the utility model according to following embodiment and attached drawing.Embodiment is preferred form of implementation, however
The utility model is not in any way restricted to this.In addition, in order to better understand, consumingly signalization is simultaneously for view in attached drawing
And actual conditions may not be showed.The ratio being shown in the accompanying drawings may not be consistent with the ratio in reality and be served only for more preferable
Ground intuitive.
Detailed description of the invention
Fig. 1 is shown according to the present utility model for setting to semiconductor substrate progress surface-texturing with chain equipment
A kind of standby embodiment；
Fig. 2 is shown according to the present utility model for setting to semiconductor substrate progress surface-texturing with chain equipment
Standby another embodiment；
Fig. 3 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate with batch-type equipment
A kind of embodiment of equipment；
Fig. 4 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate with batch-type equipment
A kind of embodiment of equipment；
Fig. 5 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate with batch-type equipment
A kind of embodiment of equipment；
Fig. 6 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate with batch-type equipment
The another embodiment of equipment；
Fig. 7 shows the scanning of the semiconductor substrate textured surfaces structure prepared in equipment according to the present utility model
Electron micrograph；
Fig. 8 shows the optics of the semiconductor substrate textured surfaces structure prepared in equipment according to the present utility model
Reflectivity with wavelength change curve；
Fig. 9 shows the one of the method for carrying out surface-texturing to semiconductor substrate in equipment according to the present utility model
The schematic diagram of kind embodiment.
Specific embodiment
Fig. 1 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate 3 with chain equipment
A kind of embodiment of equipment 1.It is wherein along conveying direction for the chain equipment 1 of the wet chemical process of semiconductor substrate 3
Conveying semiconductor substrate 3 has conveying device 4.Conveying device 4 include it is multiple along conveying direction arranged in succession and rotate driving
Conveying roller 4 '.
Equipment 1 has the first technology groove 11, the first flusher R1, the second technology groove 12, second along conveying direction in succession
Flusher R2, cleaning device 13, third flusher R3, third technology groove 14, the 4th flusher R4, acid bath groove 15,
Five flusher R5, drying device D.
First technology groove 11 is configured to accommodate the first process liquid, and is configured to remove by the first process liquid
The surface texture S0 of the semiconductor substrate 3 in preferably 0.5 to 4.0 μm/face formed by sawing simultaneously passes through deposition Argent grain simultaneously
The surface texture S1 with the hole comprising Argent grain is generated with metallic catalyst chemical etching.First technology groove 11 is with the first work
The filling of skill liquid.First process liquid is the aqueous solution using distilled water as matrix, and includes hydrofluoric acid HF, nitric acid HNO3 and nitre
Sour silver AgNO3.First process liquid includes the hydrogen of 10 weight % to 25 weight %, especially 12 weight % to 20 weight %
The nitric acid and 0.0001 weight % to 0.05 of fluoric acid, 12 weight % to 25 weight %, especially 15 weight % to 22 weight %
The silver nitrate of weight %, especially 0.001 weight % to 0.015 weight %.First process liquid is for example comprising 15 weight %'s
The silver nitrate AgNO3 of hydrofluoric acid HF, the nitric acid HNO3 of 20 weight % and 0.005 weight %.First process liquid does not contain peroxide
Change hydrogen H2O2.First process liquid has temperature T1, in which: 6 DEG C≤T1≤40 DEG C, especially 8 DEG C≤T1≤30 DEG C.Above-mentioned number
According to being weight percent.
First flusher R1 be configured to flushing liquid to the semiconductor substrate 3 exported from the first technology groove 11 into
Row rinses.The flushing liquid is preferably water, especially deionized water.Here, the flusher is fountain device, have
Multiple spray unit R1 '.
Second technology groove 12 is configured to accommodate the second process liquid, and is configured to exist in described hole described
Alkaline etch is carried out to described hole by the second process liquid in the case where Argent grain, to form the semiconductor substrate 3
The textured surface texture of inverted pyramid type.Second process liquid includes akaline liquid and surface active agent, the alkalinity
Liquid especially includes potassium hydroxide KOH and/or sodium hydroxide NaOH, and the surface active agent can be various for improving surface
The surfactant solution of wetability, such as available commercially from: Changzhou ShiChuang Energy Technology Co., Ltd., model TS 4, TS 5；
ICB Co., Ltd, model CellTex；GP solar company, model Alka-Tex and Alka-Tex.2+.Preferably, institute
State the second process liquid include 0.01 weight % to 4 weight %, especially 0.05 weight % to 1.5 weight % potassium hydroxide or
The sodium hydroxide of 0.01 weight % to 3 weight %, especially 0.025 weight % to 1.5 weight % and include 0.1 weight %
To the surface active agent of 5 weight %, especially 0.2 weight % to 2.5 weight %.Preferably, second process liquid has
Temperature T2, in which: 50 DEG C≤T2≤100 DEG C, especially 55 DEG C≤T2≤95 DEG C.
Second flusher R2 be configured to flushing liquid to the semiconductor substrate 3 exported from the second technology groove 12 into
Row rinses.The flushing liquid is preferably water, especially deionized water.Here, the flusher is fountain device, have
Multiple spray unit R2 '.
Cleaning device 13 be configured to by cleaning liquid to the textured surface texture of inverted pyramid type implement to
Few primary cleaning is to remove the Argent grain.The cleaning liquid includes nitric acid, especially 10 weight % to 70 weight %, outstanding
It is nitric acid of the 20 weight % to 70 weight %；Preferably, the cleaning liquid has temperature TR, in which: 20 DEG C≤TR≤65
DEG C, especially 23 DEG C≤TR≤60 DEG C.The equipment 1 is configured to that semiconductor substrate 3 is made to stop 0.5-3 in cleaning liquid
Minute.The cleaning device has the clean tank for accommodating cleaning liquid and for tying to the textured surface of the inverted pyramid type
Multiple spray units successively arranged of spray cleaning liquid, the multiple spray unit successively arranged especially distinguish cloth on structure
It sets inside clean tank and/or top.
Second flusher R3 is configured to carry out the semiconductor substrate 3 exported from cleaning device 13 with flushing liquid
It rinses.The flushing liquid is preferably water, especially deionized water.Here, the flusher is fountain device, have more
A spray unit R3 '.
Third technology groove 14 is configured to accommodate third process liquid, and is configured to that the Argent grain is being not present
In the case of by the third process liquid carry out further alkalinity to the textured surface texture of inverted pyramid type is clean
Etching, to form the textured surface texture of inverted pyramid type of amplification.The third process liquid includes akaline liquid and table
Face wetting agent, the akaline liquid especially include potassium hydroxide KOH and/or sodium hydroxide NaOH, and the surface active agent can be with
It is the various surfactant solutions for being used to improve surface wettability, such as available commercially from: energy science and technology limited public affairs are created when Changzhou
Department, model TS 4, TS 5；ICB Co., Ltd, model CellTex；GP solar company, model Alka-Tex and
Alka-Tex.2+.Preferably, the third process liquid include 0.1 weight % to 4 weight %, especially 0.5 weight % extremely
The sodium hydroxide of the potassium hydroxide of 3.5 weight % or 0.05 weight % to 3 weight %, especially 0.25 weight % to 2 weight %
It and include the surface active agent of 0.1 weight % to 5 weight %, especially 0.3 weight % to 3.5 weight %；Preferably, described
Third process liquid has temperature T3, in which: 50 DEG C≤T3≤100 DEG C, especially 65 DEG C≤T3≤95 DEG C.The equipment quilt
It is configured to stop semiconductor substrate 3 1-5 minutes in third process liquid.
4th flusher R4 be configured to flushing liquid to the semiconductor substrate 3 exported from third technology groove 14 into
Row rinses.The flushing liquid is preferably water, especially deionized water.Here, the flusher is fountain device, have
Multiple spray unit R4 '.
Acid bath groove 15 is configured to handle semiconductor substrate 3 with the aqueous solution containing HF and HCl.At this moment it to be done
Dry surface texture is in hydrophobicity, is at this moment dried and is usually easier again.5th flusher R5 is configured to flushing
Liquid is rinsed the semiconductor substrate 3 exported from acid bath groove 15.The flushing liquid is preferably water, especially deionization
Water.Here, the flusher is fountain device, there are multiple spray unit R5 '.Drying device D is with this field routine
Mode is arranged, wherein having dry air nozzle D '.In drying device D after drying, semiconductor substrate 3 is exported.
Before in the equipment 1 of input the utility model, the surface (S of semiconductor substrate 30) with the table formed by sawing
Face structure.Surface (the S of the semiconductor substrate obtained after being handled in the first technology groove 111) there is a large amount of hole, the hole
Hole have 50nm between 300nm, especially 100nm to the full-size between 200nm.In the second technology groove 12 at MCCE
Surface (the S of the semiconductor substrate obtained after reason2) there is the textured surface texture of inverted pyramid type, by the first construction member
Part is constituted, wherein at least 70% the first construction component have 50nm between 600nm, especially 150nm between 400nm most
Large scale.Surface (the S of the semiconductor substrate obtained after being cleaned at least once in cleaning device3) it is removed Argent grain
And silver ion.Surface (the S of the semiconductor substrate obtained after being handled in third technology groove4) there is the inverted pyramid type of amplification to knit
The surface texture of structure is made up of the second construction component, and wherein at least 70% the second construction component has 250nm extremely
Between 1200nm, especially 400nm to the full-size between 1000nm.After acid bath groove is handled, semiconductor substrate
Surface (S5) it is in hydrophobicity, it is easily dried.
Fig. 2 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate 3 with chain equipment
The another embodiment of equipment 1.Unlike equipment 1 shown in FIG. 1, the equipment 1 of Fig. 2 in third technology groove 14 and is located at
Thereafter be equipped with mechanical transfer unit C after the 4th flusher R4, the mechanical transfer unit C be configured to by by
The semiconductor substrate 3 through rinsing cleaned after liquid is cleaned is with hygrometric state directly to another chain type for post-processing
Equipment 2 transfers.Another chain equipment 2 for post-processing can be the existing equipment of manufacturer, be equipped with acid bath groove 21, punching
Cleaning device 22 and drying device D.
Fig. 3 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate 3 with batch-type equipment
Equipment 1 a kind of embodiment；The support for carrying and conveying semiconductor substrate 3 in batches is equipped in the batch-type equipment 1
Frame 7.Multiple semiconductor substrates such as monocrystalline silicon piece are loaded in the same bracket 7, the bracket 7 for example by polymer P VDF,
PTFE is made.Bracket 7 is placed on the input unit 5 of equipment 1, the input unit 5 can have multiple rollers 5 '.At this
Substrate holder 7 (such as including 100 monocrystalline silicon pieces) is placed into succession from input unit 5 with robot in batch-type equipment 1
First technology groove 11, the first flusher R1, the second technology groove 12, the second flusher R2, cleaning device 13, third rinse dress
Set R3, third technology groove 14, the 4th flusher R4, acid bath groove 15, the 5th flusher R5, the 6th flusher R6, dry dress
Set D.Wherein, all technology grooves, cleaning device and flusher are set as immersion device.It is completed in drying device D dry
After dry, the bracket for being mounted with semiconductor substrate 3 is placed on output unit 6 with robot, the output unit 6 is for example with more
A roller 6 '.
Fig. 4 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate 3 with batch-type equipment
Equipment 1 a kind of embodiment；Unlike equipment 1 shown in Fig. 3, the equipment 1 of Fig. 4 only including arranged in succession the
One technology groove 11, the first flusher R1, the second technology groove 12, the second flusher R2, cleaning device 13, third flusher
R3.In third flusher R3Later, the bracket 7 for being mounted with semiconductor substrate 3 existing another batch-type is fed directly to set
In standby 2, the equipment 2 is for example single with acid bath groove 21, flusher 22, hot water flusher 23, drying device D and output
Member 8, which can have multiple rollers 8 '.
Fig. 5 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate 3 with batch-type equipment
Equipment 1 a kind of embodiment；Unlike equipment 1 shown in Fig. 4, the equipment 1 of Fig. 5 only including arranged in succession the
One technology groove 11, the first flusher R1, the second technology groove 12, the second flusher R2, cleaning device 13, third flusher
R3.In third flusher R3Later, the bracket 7 for being mounted with semiconductor substrate 3 is placed on robotized transfer unit C, the machinery
Transfer unit C is the input unit of existing another batch-type equipment 2 herein, with the robot of equipment 2 by substrate holder 7 according to
The secondary acid bath groove 21 for being put into equipment 2, flusher 22, hot water flusher 23 and drying device D are simultaneously finally placed on output list
In member 8, which can have multiple rollers 8 '.
Fig. 6 is shown according to the present utility model for carrying out surface-texturing to semiconductor substrate 3 with batch-type equipment
Equipment 1 another embodiment.Unlike equipment 1 shown in Fig. 3, the equipment 1 of Fig. 6 only including arranged in succession the
One technology groove 11, the first flusher R1, the second technology groove 12, the second flusher R2, cleaning device 13, third flusher
R3With drying device D.
Fig. 7 shows the textured surfaces structure of the semiconductor substrate 3 prepared in equipment 1 according to the present utility model
Electron scanning micrograph；Two photos of Fig. 7 are respectively provided with different amplification factors.It can clearly be learnt from Fig. 6, in basis
The semiconductor substrate 3 prepared in the equipment 1 of the utility model has the textured surfaces structure of inverted pyramid type.
Fig. 8 shows the textured surfaces structure of the semiconductor substrate 3 prepared in equipment 1 according to the present utility model
Optical reflectivity with wavelength change curve.Reference examples and embodiment 1-3 are shown.Reference examples are using in the prior art
What the alkaline etch method of standard or alkaline monocrystalline texturing obtained, which has the positive pyramid texturing of random distribution
Surface texture.Embodiment 1-3 is prepared using equipment 1 according to the present utility model and has been obtained the golden word that falls of random distribution
The textured surface texture of tower, wherein used technological parameter is as shown in table 1.
Table 1
It will be according to reference examples and according to the texturing table of the embodiment 1-3 that the utility model the obtains semiconductor substrate obtained
Face compares in terms of etch depth, pyramid basic size and reflectivity.
Table 2
It can be seen that, the average reflectance of embodiment 1-3 is compared with the average reflectance of reference examples from the Fig. 8 and table 2
It is greatly reduced, the reflectivity reduction especially in 400-550nm wave-length coverage is very advantageously, because of the wave-length coverage pair
It is maximally efficient in shallow-layer emitter or selective emitter.It, can be obvious by changing technological parameter (concentration, temperature, time)
Reduce the textured reflectivity of monocrystalline silicon piece.Positive pyramid texture surface texture with standard is on the contrary, according to the utility model
Embodiment 1-3 the textured surface texture of inverted pyramid type (size, depth) it is more flexible.
Fig. 9 shows a kind of embodiment party of the method according to the present utility model that surface-texturing is carried out to semiconductor substrate
The schematic diagram of formula；Method includes the following steps: providing semiconductor substrate (step 101)；By the first process liquid by silver-colored
Grain is deposited on (step 102) on the surface of the semiconductor substrate and by the metallic catalyst chemical etching based on silver described
A large amount of hole (step 103) is formed on the surface of semiconductor substrate, includes the Argent grain in described hole；By the second work
Skill liquid carries out alkaline etch to described hole in the presence of the Argent grain, to form falling for the semiconductor substrate
Textured surface texture (the step 104) of pyramid；The textured surface of the inverted pyramid type is tied by cleaning liquid
Structure implementation is cleaned at least once to remove the Argent grain (step 105)；In the case where the Argent grain is not present, by the
Three process liquids carry out further alkaline etch to the textured surface texture of the inverted pyramid type is clean, and are put with being formed
The big textured surface texture (step 106) of inverted pyramid type.
Claims (32)
1. a kind of equipment for carrying out surface-texturing to semiconductor substrate, the equipment (1) include:
- the first technology groove (11) is configured to accommodate the first process liquid, and is configured to by first process liquid
Argent grain is deposited on the surface of the semiconductor substrate (3) and is partly being led by the metallic catalyst chemical etching based on silver
A large amount of hole is formed on the surface of body substrate (3), includes the Argent grain in described hole,
- the second technology groove (12) is configured to accommodate the second process liquid, and is configured to there are the feelings of the Argent grain
Alkaline etch is carried out to described hole by second process liquid under condition, to form the gold that falls of the semiconductor substrate (3)
The textured surface texture of word tower,
Cleaning device (13), be configured to by cleaning liquid to the textured surface texture of inverted pyramid type implement to
Few primary cleaning is to remove the Argent grain.
2. equipment described in accordance with the claim 1, which is characterized in that first process liquid includes hydrofluoric acid (HF), nitric acid
(HNO3) and silver nitrate (AgNO3)。
3. equipment described in accordance with the claim 1, which is characterized in that first process liquid has temperature T1, in which: 6 DEG C
≤T1≤40℃。
4. equipment described in accordance with the claim 1, which is characterized in that described hole has 50nm to the maximum ruler between 300nm
It is very little.
5. equipment described in accordance with the claim 1, which is characterized in that the equipment (1) is configured to that semiconductor substrate (3) is made to exist
It is stopped 0.5-4 minutes in first process liquid.
6. equipment described in accordance with the claim 1, which is characterized in that the semiconductor substrate (3) has the table formed by sawing
Face structure, first technology groove (11) are configured in addition also be formed by first process liquid removal is described by sawing
Surface texture.
7. equipment according to claim 6, which is characterized in that first technology groove (11) be configured in addition also by
First process liquid removes the surface texture formed by sawing in 0.5 to 4.0 μm/face.
8. equipment described in accordance with the claim 1, which is characterized in that second process liquid includes that akaline liquid and surface are moistened
Humectant, the akaline liquid include potassium hydroxide (KOH) and/or sodium hydroxide (NaOH).
9. equipment described in accordance with the claim 1, which is characterized in that second process liquid has temperature T2, in which: 50 DEG C
≤T2≤100℃。
10. equipment described in accordance with the claim 1, which is characterized in that the textured surface texture of inverted pyramid type passes through
First construction component is constituted, and wherein at least 70% the first construction component has 50nm to the full-size between 600nm.
11. equipment described in accordance with the claim 1, which is characterized in that the equipment (1) is configured to make semiconductor substrate (3)
It is stopped 0.2-2 minutes in the second process liquid.
12. equipment described in accordance with the claim 1, which is characterized in that the cleaning liquid includes nitric acid.
13. equipment described in accordance with the claim 1, which is characterized in that the cleaning liquid has temperature TR, in which: 20 DEG C≤
TR≤65℃。
14. equipment described in accordance with the claim 1, which is characterized in that the equipment (1) is configured to make semiconductor substrate (3)
It is stopped 0.5-3 minutes in cleaning liquid.
15. equipment described in accordance with the claim 1, which is characterized in that the cleaning device (13) has with cleaning liquid
Clean tank, wherein the cleaning device (13) has multiple spray units successively arranged for spraying on the surface texture
Liquid is cleaned, the multiple spray unit successively arranged is arranged in inside clean tank and/or top.
16. equipment described in accordance with the claim 1, which is characterized in that the equipment (1) further includes that at least one is set up directly on
Flusher after first technology groove (11), the second technology groove (12) and/or cleaning device (13), is configured to use flushing liquor
Body carries out the semiconductor substrate (3) exported from the first technology groove (11), the second technology groove (12) and/or cleaning device (13)
It rinses；Wherein the flushing liquid is water；The flusher is fountain device or immersion device.
17. equipment according to claim 16, which is characterized in that the equipment (1) further includes being sequentially arranged at cleaning device
(13) acid bath groove (15), flusher and drying device (D) after flusher, the acid bath groove (15) are configured to use
The aqueous solution being made of hydrofluoric acid and hydrochloric acid is to partly leading with flushing liquid flushing export from cleaning device (13) and subsequent
Body substrate (3) is post-processed, and the flusher is configured to flushing liquid to the semiconductor substrate through the post-processing
(3) it is rinsed, the drying device (D) is configured to that the semiconductor substrate (3) is dried.
18. equipment described in accordance with the claim 1, which is characterized in that the equipment further includes third technology groove (14), is constructed
To accommodate third process liquid, and it is configured in the case where the Argent grain is not present by the third process liquid
Further alkaline etch is carried out to the textured surface texture of inverted pyramid type is clean, to form the inverted pyramid type of amplification
Textured surface texture.
19. equipment according to claim 18, which is characterized in that the third process liquid includes akaline liquid and surface
Wetting agent, the akaline liquid include potassium hydroxide (KOH) and/or sodium hydroxide (NaOH).
20. equipment according to claim 18, which is characterized in that the third process liquid has temperature T3, in which: 50
℃≤T3≤100℃。
21. equipment according to claim 18, which is characterized in that the textured surface texture of inverted pyramid type of amplification is logical
The second construction component composition is crossed, wherein at least 70% the second construction component has 250nm to the full-size between 1200nm.
22. equipment according to claim 18, which is characterized in that the equipment (1) is configured to make semiconductor substrate (3)
It is stopped 1-5 minutes in third process liquid.
23. equipment according to claim 18, which is characterized in that the equipment (1) further includes being set up directly on third work
Flusher after skill slot (14), the flusher are configured to flushing liquid to the output from third technology groove (14)
Semiconductor substrate (3) be rinsed；The flushing liquid is water.
24. according to the equipment described in claim 23, which is characterized in that the equipment (1) further includes being sequentially arranged at third technique
Acid bath groove (15), flusher and drying device (D) after the flusher of slot (14), the acid bath groove (15) are configured to
Flushing liquid export from third technology groove (14) and subsequent is rinsed with the aqueous solution being made of hydrofluoric acid and hydrochloric acid
Semiconductor substrate (3) is post-processed, and the flusher is configured to flushing liquid to the semiconductor through the post-processing
Substrate (3) is rinsed, and the drying device (D) is configured to that the semiconductor substrate (3) is dried.
25. according to equipment described in one of claim 1 to 24, which is characterized in that the equipment (1) is chain equipment, wherein setting
There is the conveying device for continuously conveying semiconductor substrate (3).
26. according to the equipment described in claim 25, which is characterized in that the chain equipment further includes along the semiconductor substrate
(3) conveying direction is directly located at after the flusher of the cleaning device (13) or is directly located at the cleaning device
(13) the mechanical transfer unit (C) after, the mechanical transfer unit (C) be configured to by by the cleaning liquid into
The semiconductor substrate (3) through rinsing or without flushing after row cleaning is directly set to another chain type for post-processing with hygrometric state
Standby (2) transfer.
27. according to equipment described in one of claim 18 to 24, which is characterized in that the equipment (1) is chain equipment, wherein setting
There is the conveying device for continuously conveying semiconductor substrate (3).
28. according to the equipment described in claim 27, which is characterized in that the chain equipment further includes along the semiconductor substrate
(3) conveying direction is directly located at after the flusher of the third technology groove (14) or is directly located at the third
Mechanical transfer unit (C) after technology groove (14), the mechanical transfer unit (C) is configured to will be by the third
Process liquid carry out being rinsed after further alkaline etch or the semiconductor substrate (3) without flushing with hygrometric state directly to
It is transferred in another chain equipment (2) of post-processing.
29. according to equipment described in one of claim 1 to 24, which is characterized in that the equipment (1) is batch-type equipment,
In be equipped with for carrying and conveying the brackets of semiconductor substrate (3) in batches.
30. according to the equipment described in claim 29, which is characterized in that the batch-type equipment is configured to utilize the bracket
(7) being rinsed after being cleaned by the cleaning liquid or the semiconductor substrate (3) without flushing are direct with hygrometric state
To another batch-type equipment (2) transfer for post-processing.
31. according to the equipment described in claim 29, which is characterized in that the batch-type equipment further includes being arranged in the cleaning
Drying device (D) after the flusher of device (13), the drying device (D) are configured to from the cleaning device
(13) semiconductor substrate (3) rinsed with flushing liquid export and subsequent sufficiently dry, so that dried multiple
Semiconductor substrate (3) will not be connected with each other when being stacked because of moisture remaining in the surface texture.
32. according to equipment described in one of claim 1 to 24, which is characterized in that the equipment (1) is used for single crystal semiconductor
Substrate (3) carries out surface-texturing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820801161.4U CN209133464U (en) | 2018-05-25 | 2018-05-25 | Equipment for carrying out surface-texturing to semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820801161.4U CN209133464U (en) | 2018-05-25 | 2018-05-25 | Equipment for carrying out surface-texturing to semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209133464U true CN209133464U (en) | 2019-07-19 |
Family
ID=67227077
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| Application Number | Title | Priority Date | Filing Date |
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| CN201820801161.4U Active CN209133464U (en) | 2018-05-25 | 2018-05-25 | Equipment for carrying out surface-texturing to semiconductor substrate |
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| Country | Link |
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| CN (1) | CN209133464U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019223805A1 (en) * | 2018-05-25 | 2019-11-28 | Rct Solutions Gmbh | Method and apparatus for surface texturing of semiconductor substrate |
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2018
- 2018-05-25 CN CN201820801161.4U patent/CN209133464U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019223805A1 (en) * | 2018-05-25 | 2019-11-28 | Rct Solutions Gmbh | Method and apparatus for surface texturing of semiconductor substrate |
| CN110534450A (en) * | 2018-05-25 | 2019-12-03 | Rct解决方法有限责任公司 | For carrying out the device and method of surface-texturing to semiconductor substrate |
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