CN108120871A - A kind of low maladjustment voltage comparator - Google Patents
A kind of low maladjustment voltage comparator Download PDFInfo
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- CN108120871A CN108120871A CN201711261484.5A CN201711261484A CN108120871A CN 108120871 A CN108120871 A CN 108120871A CN 201711261484 A CN201711261484 A CN 201711261484A CN 108120871 A CN108120871 A CN 108120871A
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- oxide
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- semiconductor
- bipolar transistor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16576—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing DC or AC voltage with one threshold
Abstract
The present invention provides a kind of low maladjustment voltage comparator, including：The 3rd resistor being sequentially connected in series between voltage input end and ground terminal and the 4th resistance；The 3rd feedback resistance, the 4th metal-oxide-semiconductor, the second bipolar transistor, first resistor and the second resistance being sequentially connected between power end and ground terminal；The first feedback resistance, the first metal-oxide-semiconductor, the first bipolar transistor being sequentially connected between the connecting node between power end and first resistor and second resistance, and connecting node of the control terminal of the first bipolar transistor and the second bipolar transistor between 3rd resistor and the 4th resistance is connected；The second feedback resistance, the second metal-oxide-semiconductor and the active load being sequentially connected between power end and ground terminal, the control terminal of the second metal-oxide-semiconductor are connected with the second connection end of the first metal-oxide-semiconductor.Compared with prior art, the present invention can reduce influence of the misalignment voltage to turn threshold, so that influence of the misalignment voltage to turn threshold is within the acceptable range by increasing feedback resistance.
Description
【Technical field】
The present invention relates to electronic circuit technology field, more particularly to a kind of low maladjustment voltage comparator.
【Background technology】
There are voltage comparator and current comparators in battery protecting circuit.Voltage comparator is divided into be compared for overcharged voltage
Device and overdischarge pressure comparator.With the progress of li-ion cell protection technology, to additives for overcharge protection threshold value (VOC) and over
The required precision of threshold value (VOD) is higher and higher.It is a kind of overcharged voltage comparator of the prior art shown in please referring to Fig.1
Circuit diagram, overdischarge pressure comparator it is similar with the circuit structure of overcharged voltage comparator, by the resistance Rd1 of different proportion
The additives for overcharge protection threshold value VOC different with Rd2 generations and over threshold value VOD.
In chip actual production processing, since stress is influenced after by process deviation and encapsulation, it can cause in Fig. 1
Metal-oxide-semiconductor M4, M1, M2 are mismatched, and are introduced random mismatch (being equivalent to misalignment voltage Vos1 and Vos2), are ultimately resulted in charge protection threshold
There is deviation in the actual value and design load of value VOC.Simulation result show the Vos1 of +/- 3mv can cause VOC off-designs value+
100/-96mv, this is flagrant in high precision design.
Therefore, it is necessary to a kind of improved technical solution is provided to solve the above problems.
【The content of the invention】
It is an object of the invention to provide a kind of voltage comparators, can reduce misalignment voltage Vos to turn threshold (ratio
Such as, additives for overcharge protection threshold value VOC or over threshold value VOD) influence so that misalignment voltage Vos is to turn threshold
It influences within the acceptable range.
To solve the above-mentioned problems, the present invention provides a kind of voltage comparator, including first resistor, second resistance, the
Three resistance, the 4th resistance, the first feedback resistance, the second feedback resistance, the 3rd feedback resistance, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor,
Four metal-oxide-semiconductors and the first bipolar transistor, the second bipolar transistor and active load.Wherein, 3rd resistor and the 4th electricity
Resistance is sequentially connected in series between voltage input end and ground terminal, and the 3rd feedback resistance is connected to the first of power end and the 4th metal-oxide-semiconductor
Between connecting pin, the control terminal of the 4th metal-oxide-semiconductor is connected with the second connection end of the 4th metal-oxide-semiconductor, the second connection end of the 4th metal-oxide-semiconductor
It is connected with the first connecting pin of the second bipolar transistor, control terminal and the 3rd resistor and the 4th electricity of the second bipolar transistor
Connecting node between resistance is connected, and the second connection end of the second bipolar transistor passes through the first resistor being sequentially connected in series and second
Resistance eutral grounding；First feedback resistance is connected between power end and the first connecting pin of the first metal-oxide-semiconductor, the control of the first metal-oxide-semiconductor
End is connected with the control terminal of the 4th metal-oxide-semiconductor, the second connection end of the first metal-oxide-semiconductor and the first connecting pin of the first bipolar transistor
It is connected, the control terminal of the control terminal of the first bipolar transistor and the second bipolar transistor, the of the first bipolar transistor
Two connecting pins are connected with the connecting node between first resistor and second resistance；Second feedback resistance be connected to power end VDD and
Between first connecting pin of the second metal-oxide-semiconductor, between the control terminal of the second metal-oxide-semiconductor and the first metal-oxide-semiconductor and the first bipolar transistor
Connecting node be connected, the second connection end of the second metal-oxide-semiconductor is connected with the output terminal of voltage comparator；The one of the active load
End is connected with the output terminal of voltage comparator, and the other end ground connection of the active load, the active load is generated from the electricity
Press the constant current on the output terminal flow direction ground of comparator.
Further, first metal-oxide-semiconductor, the second metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are PMOS transistor, and described first
The first connecting pin, second connection end and the control terminal of metal-oxide-semiconductor, the second metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are respectively the source of PMOS transistor
Pole, drain and gate.
Further, first bipolar transistor and the second bipolar transistor are NPN transistor, and described
The first connecting pin, second connection end and the control terminal of first bipolar transistor and the second bipolar transistor are respectively NPN type
Collector, emitter and the base stage of transistor.
Further, the active load includes the 3rd metal-oxide-semiconductor, the first connecting pin of the 3rd metal-oxide-semiconductor and voltage comparator
Output terminal, second connection end ground connection, control terminal is connected with bias voltage.
Further, the 3rd metal-oxide-semiconductor be NMOS transistor, and the first connecting pin of the 3rd metal-oxide-semiconductor, second connect
Connect end and control terminal be respectively NMOS transistor drain electrode, source electrode and grid.
Compared with prior art, the present invention can reduce misalignment voltage Vos to turn threshold by increasing feedback resistance
It influences, so that influences of the misalignment voltage Vos to turn threshold is within the acceptable range.
【Description of the drawings】
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for this
For the those of ordinary skill of field, without having to pay creative labor, it can also be obtained according to these attached drawings other
Attached drawing.Wherein：
Fig. 1 is a kind of circuit diagram of voltage comparator of the prior art；
Fig. 2 is the schematic diagram of the equivalent circuit of voltage comparator shown in FIG. 1；
Fig. 3 is the circuit diagram of the voltage comparator of the present invention in one embodiment；
Fig. 4 is the schematic diagram of the equivalent circuit of voltage comparator shown in Fig. 3.
【Specific embodiment】
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
" one embodiment " or " embodiment " referred to herein refers to may be included at least one realization method of the present invention
A particular feature, structure, or characteristic." in one embodiment " that different places occur in the present specification not refers both to same
A embodiment, nor the individual or selective embodiment mutually exclusive with other embodiment.Unless stated otherwise, herein
In connect, be connected, connecting expression be electrically connected word represent directly or indirectly to be electrical connected.
It is the schematic equivalent circuit of voltage comparator shown in FIG. 1 shown in please referring to Fig.2.The voltage comparator
Overcharged voltage comparator is may be used as, the voltage comparator is used to be equal to additives for overcharge protection threshold value in detection terminal voltage VM at this time
During VOC, output signal is overturn.The voltage comparator may be used as overdischarge pressure comparator, and the voltage compares at this time
Device is used for when detecting terminal voltage VM equal to over threshold value VOD, and output signal is overturn.It hereafter will be with the voltage
Comparator is is introduced exemplified by overcharged voltage comparator, the turn threshold of the voltage comparator is additives for overcharge protection threshold at this time
Value VOC.
In Fig. 2, the collector resistance of bipolar transistor N1 is denoted as Rce, and the drain resistance of metal-oxide-semiconductor M1, M2, M3 are remembered respectively
For Rds1, Rds2, Rds3, bipolar transistor N1, the equivalent transconductance of metal-oxide-semiconductor M1, M2, M3 be denoted as respectively gm0, gm1, gm2,
Gm3, wherein bipolar transistor N1 itself mutual conductances are denoted as gmn, then have：
First order output resistance Ro1 is：
Ro1=Rds1//Rce* (1+gmn*Re)
Second level output resistance Ro2 is：
Ro2=Rds2//Rds3
First order gain A v1 is：
Influences of the equivalent misalignment voltage Vos1 to input voltage vin：
Influences of the equivalent misalignment voltage Vos2 to input voltage vin：
Δ Vin2=Vos2/Av1.
According to Fig. 1 and Fig. 2, the relation of additives for overcharge protection threshold value VOC and input voltage vin is：
Vin=Voc*Rd2/ (Rd1+Rd2)
Wherein, for the emitter that Re is the bipolar transistor N1 in Fig. 1 to the equivalent resistance on ground, Rd1 and Rd2 are respectively to scheme
The resistance value of resistance Rd1 and Rd2 in 1, Vos1 be in Fig. 2 equivalent misalignment voltage Vos1 (or be current mirror mismatch electricity
Pressure), Vos2 is the equivalent misalignment voltage Vos2 (or being second level misalignment voltage) in Fig. 2, and Vin is the voltage ratio described in Fig. 2
Compared with the input voltage of device base stage of bipolar transistor N1 in output switching activity, relation proportional to charge protection threshold value VOC,
Δ Vin is the variable quantity of the input voltage vin of the base stage, corresponding with the variable quantity of charge protection threshold value VOC.
In order to reduce the influence of misalignment voltage Vos1, Vos2 to additives for overcharge protection threshold value VOC precision, the present invention is to existing
Overcharged voltage comparator is improved.
Shown in please referring to Fig.3, the circuit diagram of the overcharged voltage comparator of the present invention in one embodiment.Fig. 3
It is with the main distinction of Fig. 1, is added on the basis of the overcharged voltage comparators of Fig. 3 shown in Fig. 1, be connected to power end
The first negative feedback resistor Rs1 between the source electrode of VDD and metal-oxide-semiconductor M1, is connected between the source electrode of power end VDD and metal-oxide-semiconductor M2
The second negative feedback resistor Rs2 and the 3rd negative feedback resistor that is connected between the source electrode of power end VDD and metal-oxide-semiconductor M3
Rs3。
Overcharged voltage comparator shown in Fig. 3 includes first resistor R1, second resistance R2,3rd resistor Rd1, the 4th resistance
Rd2, the first feedback resistance Rs1, the second feedback resistance Rs2 and the 3rd feedback resistance Rs3, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2,
4th metal-oxide-semiconductor M4 and the first bipolar transistor N1, the second bipolar transistor N2 and active load 110.Wherein, the 3rd
Resistance Rd1 and the 4th resistance Rd2 are sequentially connected in series between voltage input end VM and ground terminal, and the 3rd feedback resistance Rs3 is connected to
Between the first connecting pin of power end VDD and the 4th metal-oxide-semiconductor M4, the control terminal of the 4th metal-oxide-semiconductor M4 and the second of the 4th metal-oxide-semiconductor M4
Connecting pin is connected, and the second connection end of the 4th metal-oxide-semiconductor M4 is connected with the first connecting pin of the second bipolar transistor N2, second pair
Connecting node between the control terminal of bipolar transistor N2 and 3rd resistor Rd1 and the 4th resistance Rd2 is connected, the second ambipolar crystalline substance
The second connection end of body pipe N2 is grounded by the first resistor R1 and second resistance R2 being sequentially connected in series；First feedback resistance Rs1 connects
It is connected between the first connecting pin of power end VDD and the first metal-oxide-semiconductor M1, the control terminal of the first metal-oxide-semiconductor M1 is with the 4th metal-oxide-semiconductor M4's
Control terminal is connected, and the second connection end of the first metal-oxide-semiconductor M1 is connected with the first connecting pin of the first bipolar transistor N1, first pair
The control terminal of the control terminal of bipolar transistor N1 and the second bipolar transistor N2, the second connection of the first bipolar transistor N1
End is connected with the connecting node between first resistor R1 and second resistance R2；Second feedback resistance Rs2 be connected to power end VDD and
Between the first connecting pin of second metal-oxide-semiconductor M2, the control terminal of the second metal-oxide-semiconductor M2 and the first metal-oxide-semiconductor M1 and the first bipolar transistor
Connecting node between pipe N1 is connected, and the second connection end of the second metal-oxide-semiconductor M2 is connected with the output end vo ut of voltage comparator；Have
One end of source load 110 is connected with the output end vo ut of voltage comparator, the other end ground connection of active load 110.
In specific embodiment shown in Fig. 3, active load 110 include the 3rd metal-oxide-semiconductor M3, the first of the 3rd metal-oxide-semiconductor M3
Connecting pin and the output end vo ut of voltage comparator, second connection end ground connection, control terminal are connected with bias voltage Vbias,
So that the active load 110 generates the constant current Ibias from output end vo ut flow directions ground；The 3rd metal-oxide-semiconductor M3 is
NMOS transistor, and the first connecting pin, second connection end and the control terminal of metal-oxide-semiconductor M3 is respectively the drain electrode of NMOS transistor, source
Pole and grid；Described metal-oxide-semiconductor M1, M2 and M4 are POS transistors, and the first connecting pin of metal-oxide-semiconductor M1, M2 and M4, second are connected
It is respectively the source electrode of PMOS transistor, drain and gate to connect end and control terminal；The bipolar transistor N1 and N2 is NPN type
Transistor, and the first connecting pin, second connection end and the control terminal of the bipolar transistor N1 and N2 is respectively NPN type crystal
Collector, emitter and the base stage of pipe.
Shown in please referring to Fig.4, for the schematic diagram of equivalent circuit that it is overcharged voltage comparator shown in Fig. 3.Fig. 4 with
The main distinction of Fig. 2 is：Fig. 4 is added on the basis of the equivalent circuit of overcharged voltage comparator shown in Fig. 2, is connected to
The first negative feedback resistor Rs1 between the source electrode of power end VDD and metal-oxide-semiconductor M1 is connected to the source of power end VDD and metal-oxide-semiconductor M2
The second negative feedback resistor Rs2 between pole.
Since metal-oxide-semiconductor M1, M2 and M4 in Fig. 3 are mismatched, equivalent misalignment voltage Vos1 and Vos1 is generated, belongs to parasitic
Voltage source.In Fig. 4, the anode of equivalent misalignment voltage Vos1 is connected with the control terminal of the first metal-oxide-semiconductor M1, cathode ground connection；Deng
The anode of effect misalignment voltage Vos2 is connected with the connecting node between the first metal-oxide-semiconductor M1 and the first bipolar transistor N1, bears
Pole is connected with the control terminal of the second metal-oxide-semiconductor M2.In other embodiments or the cathode of equivalent misalignment voltage Vos1 and
The control terminal of one metal-oxide-semiconductor M1 is connected, plus earth；The cathode of equivalent misalignment voltage Vos2 and the first metal-oxide-semiconductor M1 and first pair
Connecting node between bipolar transistor N1 is connected, and anode is connected with the control terminal of the second metal-oxide-semiconductor M2.This is mainly by device
Unmatched concrete condition determines.
It is analyzed below for Fig. 4.
After adding the first negative feedback resistor Rs1, the equivalent transconductance gm1 ' of metal-oxide-semiconductor M1 is：
The equivalent transconductance gm0 ' of bipolar transistor N1 is：
Gm0 '=gm0,
First order output resistance Ro1 ' is：
Ro1 '=Rds1 (1+gm1*Rs1) //Rce* (1+gmn*Re)
Second level output resistance Ro2 ' is：
Ro2 '=Rds2 (1+gm2*Rs2) //Rds3
First order gain A v1 ' is：
Influences of the equivalent misalignment voltage Vos1 to input voltage vin：
In this way,
That is, influences of the Vos1 to input voltage vin becomes original
Influences of the equivalent misalignment voltage Vos2 to input voltage vin：
Δ Vin2 '=Vos2/Av1 ',
Due to Ro1 ' ＞ Ro1, so the first stage gain becomes larger, influences of the equivalent misalignment voltage Vos2 to input voltage vin
It is similary to reduce.
Performance comparison before and after improvement.
Table 1：VOC values are by Vos1 impact analysis before and after improvement
* mono- columns of Delta Voc refer to there be difference of the mismatch (Vos1=+/- 3mv) compared with VOC during no mismatch.
When from upper form as can be seen that not having Rs1, the Vos1 of +/- 3mv can cause VOC value off-design values+100/-
96mv；After increasing Rs1, Vos1 causes VOC deviation values to become smaller, and Rs1 is bigger, and 1/ (1+gm1*Rs1) is smaller, and Vos1 is to VOC
Influence it is smaller；As Rs1=300k, the Vos1 of +/- 3mv causes VOC off-designs value to only have+7/-8mv.
Table 2：VOC values are by Vos2 impact analysis before and after improvement
* mono- columns of Delta Voc refer to there be difference of the mismatch (Vos2=+/- 100mv) compared with VOC during no mismatch.
As can be seen that after increasing Rs1 from upper form, VOC deviation values become smaller caused by Vos2.It can also be obtained with reference to table 1
Go out, influences of the Vos2 to VOC is small more than influences of the Vos1 to VOC, this is because influences of the Vos2 to VOC will divided by the first order
Gain.
Compared with prior art, the present invention in voltage comparator the advantages of be：
Reduce influences of the current mirror mismatch Vos1 to additives for overcharge protection threshold value VOC (or over threshold value VOD)；
Increase first order comparator gain, reduce second level mismatch Vos2 to additives for overcharge protection threshold value VOC (or cross put
Electric protection threshold value VOD)；
Random mismatch is reduced to additives for overcharge protection threshold with smaller cost (increasing only source degeneration resistance Rs)
The influence of value VOC (or over threshold value VOD), and effect is obvious.
In the present invention, the word that the expressions such as " connection ", connected, " company ", " connecing " are electrical connected, unless otherwise instructed, then
Represent direct or indirect electric connection.
It is pointed out that any change that one skilled in the art does the specific embodiment of the present invention
All without departing from the scope of claims of the present invention.Correspondingly, the scope of claim of the invention is also not merely limited to
In previous embodiment.
Claims (5)
1. a kind of voltage comparator, which is characterized in that it includes first resistor, second resistance, 3rd resistor, the 4th resistance,
One feedback resistance, the second feedback resistance, the 3rd feedback resistance, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and first pair
Bipolar transistor, the second bipolar transistor and active load,
Wherein, 3rd resistor and the 4th resistance are sequentially connected in series between voltage input end and ground terminal, the connection of the 3rd feedback resistance
Between the first connecting pin of power end and the 4th metal-oxide-semiconductor, the control terminal of the 4th metal-oxide-semiconductor and the second connection end of the 4th metal-oxide-semiconductor
It is connected, the second connection end of the 4th metal-oxide-semiconductor is connected with the first connecting pin of the second bipolar transistor, the second bipolar transistor
Control terminal be connected with the connecting node between 3rd resistor and the 4th resistance, the second connection end of the second bipolar transistor is led to
Cross the first resistor being sequentially connected in series and second resistance ground connection；
First feedback resistance is connected between power end and the first connecting pin of the first metal-oxide-semiconductor, the control terminal of the first metal-oxide-semiconductor and the
The control terminal of four metal-oxide-semiconductors is connected, and the second connection end of the first metal-oxide-semiconductor is connected with the first connecting pin of the first bipolar transistor,
The control terminal of the control terminal of first bipolar transistor and the second bipolar transistor, the second connection of the first bipolar transistor
End is connected with the connecting node between first resistor and second resistance；
Second feedback resistance is connected between power end VDD and the first connecting pin of the second metal-oxide-semiconductor, the control terminal of the second metal-oxide-semiconductor
Connecting node between the first metal-oxide-semiconductor and the first bipolar transistor is connected, second connection end and the voltage ratio of the second metal-oxide-semiconductor
Output terminal compared with device is connected；
One end of the active load is connected with the output terminal of voltage comparator, the other end ground connection of the active load, described
Active load generates the constant current from the output terminal flow direction ground of the voltage comparator.
2. voltage comparator according to claim 1, which is characterized in that
First metal-oxide-semiconductor, the second metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are PMOS transistor, and first metal-oxide-semiconductor, the 2nd MOS
The first connecting pin, second connection end and the control terminal of pipe and the 4th metal-oxide-semiconductor are respectively source electrode, drain electrode and the grid of PMOS transistor
Pole.
3. voltage comparator according to claim 2, which is characterized in that
First bipolar transistor and the second bipolar transistor are NPN transistor, and the first ambipolar crystalline substance
The first connecting pin, second connection end and the control terminal of body pipe and the second bipolar transistor are respectively the current collection of NPN transistor
Pole, emitter and base stage.
4. voltage comparator according to claim 1, which is characterized in that the active load include the 3rd metal-oxide-semiconductor, the 3rd
First connecting pin of metal-oxide-semiconductor and the output terminal of voltage comparator, second connection end ground connection, control terminal and bias voltage phase
Even.
5. voltage comparator according to claim 4, which is characterized in that
3rd metal-oxide-semiconductor is NMOS transistor, and the first connecting pin, second connection end and the control terminal of the 3rd metal-oxide-semiconductor
The respectively drain electrode of NMOS transistor, source electrode and grid.
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| CN201711261484.5A CN108120871B (en) | 2017-12-04 | 2017-12-04 | Low offset voltage comparator |
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| CN201711261484.5A CN108120871B (en) | 2017-12-04 | 2017-12-04 | Low offset voltage comparator |
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| CN108120871A true CN108120871A (en) | 2018-06-05 |
| CN108120871B CN108120871B (en) | 2020-03-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113659935A (en) * | 2021-10-21 | 2021-11-16 | 南京正銮电子科技有限公司 | Gaussian pulse power amplifier and transmitter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101557215A (en) * | 2008-07-07 | 2009-10-14 | 西安民展微电子有限公司 | Voltage comparator |
| US20120323508A1 (en) * | 2011-06-16 | 2012-12-20 | Freescale Semiconductor, Inc. | Low voltage detector |
| CN205540381U (en) * | 2016-02-02 | 2016-08-31 | 厦门新页微电子技术有限公司 | Accurate excess temperature protection circuit of current feedback formula |
| CN107332517A (en) * | 2017-06-21 | 2017-11-07 | 成都嘉纳海威科技有限责任公司 | A kind of High Linear broadband based on gain compensation technology stacks low-noise amplifier |
-
2017
- 2017-12-04 CN CN201711261484.5A patent/CN108120871B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101557215A (en) * | 2008-07-07 | 2009-10-14 | 西安民展微电子有限公司 | Voltage comparator |
| US20120323508A1 (en) * | 2011-06-16 | 2012-12-20 | Freescale Semiconductor, Inc. | Low voltage detector |
| CN205540381U (en) * | 2016-02-02 | 2016-08-31 | 厦门新页微电子技术有限公司 | Accurate excess temperature protection circuit of current feedback formula |
| CN107332517A (en) * | 2017-06-21 | 2017-11-07 | 成都嘉纳海威科技有限责任公司 | A kind of High Linear broadband based on gain compensation technology stacks low-noise amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113659935A (en) * | 2021-10-21 | 2021-11-16 | 南京正銮电子科技有限公司 | Gaussian pulse power amplifier and transmitter |
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