CN108109940B - Substrate processing apparatus and substrate processing system - Google Patents
Substrate processing apparatus and substrate processing system Download PDFInfo
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- CN108109940B CN108109940B CN201711188858.5A CN201711188858A CN108109940B CN 108109940 B CN108109940 B CN 108109940B CN 201711188858 A CN201711188858 A CN 201711188858A CN 108109940 B CN108109940 B CN 108109940B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67098—Apparatus for thermal treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
The invention can raise the temperature of the heated body such as a mounting table for mounting a substrate to the changed set temperature without using a small-capacity power supply device for a long time when the set temperature is changed. The substrate processing apparatus of the present invention for processing a substrate includes: PM400a to d each having a heating unit for heating a target object such as a mounting table on which a substrate is mounted; and controllers 300a to d each having a temperature control unit for controlling the heating unit to adjust the temperature of the object to be heated to the set temperature by limiting the driving power of the heating unit to the allowable power or less, wherein the temperature control unit has a limiting function for limiting the driving power to the limited power or less lower than the allowable power, and the limiting function is effective in the step of raising the temperature of the object to be heated to the changed set temperature when the set temperature of the object to be heated is changed, the change of the set temperature including the start-up of the substrate processing apparatus.
Description
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing system for performing a process such as a film formation process on a substrate such as a semiconductor wafer.
Background
In the manufacturing process of a semiconductor manufacturing apparatus, various processes such as a film forming process and an etching process are repeatedly performed on a substrate of a semiconductor wafer. In recent years, a substrate processing system is formed by providing a plurality of substrate processing apparatuses for processing substrates as described above (see patent document 1).
In the substrate processing system of patent document 1, a maximum power value of processing consumed in each processing line of a plurality of processes executed in a plurality of substrate processing apparatuses is stored. Then, in the system of patent document 1, the total value of the processing maximum power values corresponding to the processes being executed in the respective substrate processing apparatuses and the total value of the processing maximum power values corresponding to the requested processes are calculated in accordance with the processing requests, and the requested processes are executed only when the total value is within the maximum power values that can be used in the entire system.
Thus, in the substrate system of patent document 1, the substrate can be processed by the power supply device having a small capacity without reducing the number of processes to be executed in parallel.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2007-273888
Disclosure of Invention
Technical problem to be solved by the invention
In the substrate processing system, when a set temperature of a mounting table or the like on which a substrate is to be mounted is set at the time of starting up each substrate processing apparatus, or when a process is switched to a process in which the set temperature of the mounting table is higher than that of a conventional process, a step of raising the temperature of the mounting table to the changed set temperature (hereinafter referred to as a temperature raising step) is performed. Among the steps performed in the substrate processing apparatus, the temperature increasing step consumes the most power.
Therefore, in the conventional system, when the temperature raising step is executed in parallel in all the substrate processing apparatuses, it is necessary to prepare a power supply device having an allowable power consumption equal to or higher than the predicted maximum power value, or to sequentially perform the temperature raising step in each of the substrate processing apparatuses.
In this temperature raising step, the technique of patent document 1 is adopted, whereby the stage can be raised in temperature by a power feeding device having a small capacity without reducing the number of temperature raising steps to be executed in parallel.
However, with the technique of patent document 1, since execution of the temperature raising step is not allowed, it takes a long time until the temperature raising step is completed for all the substrate processing apparatuses.
In addition, it is preferable to further reduce the capacity of the power supply apparatus.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a substrate processing system capable of raising a temperature of a heated object such as a mounting table to a changed set temperature using a small-capacity power feeding device which does not require a long time when changing the set temperature including at the time of starting the apparatus, and a substrate processing apparatus for realizing the system.
Technical solution for solving technical problem
In order to achieve the above object, the present invention provides a substrate processing apparatus for processing a substrate, comprising: a heating unit that heats a target object including a mounting table on which a substrate is mounted; and a temperature control unit that controls the heating unit to adjust the temperature of the object to be heated to a set temperature while limiting the driving power of the heating unit to an allowable power or less, wherein the temperature control unit has a limiting function of limiting the driving power to a limited power or less lower than the allowable power, and the limiting function is enabled in the step of raising the temperature of the object to be heated to the set temperature after the change when the set temperature of the object to be heated is changed, the change of the set temperature including the start-up of the substrate processing apparatus.
According to the present invention, the drive power can be temporarily limited to the limit power lower than the allowable power or less at the time of changing the set temperature of the object to be heated and at the time of the temperature raising step of the object to be heated to the changed set temperature. Therefore, the power supply apparatus can be downsized.
In the step of raising the temperature of the object to be heated to the changed set temperature when the set temperature is changed, whether or not the limiting function is enabled may be determined for each object to be heated.
Another aspect of the present invention provides a substrate processing system, characterized in that: the substrate processing apparatus includes a plurality of substrate processing apparatuses for processing substrates, and includes: a heating unit that heats a target object including a mounting table on which a substrate is mounted; and a temperature control unit for controlling the heating unit to adjust the temperature of the object to be heated to a set temperature while limiting the driving power of the heating unit to be equal to or less than an allowable power, the substrate processing system includes a control device for controlling the plurality of substrate processing apparatuses, the temperature control unit of the substrate processing apparatus has a limiting function for limiting the driving power to a limiting power lower than the allowable power, the control device includes a determination unit for determining whether or not the limiting function is enabled, the determination unit determines that the limiting function is enabled in the step when at least a condition that the step to be executed is a step of raising the temperature of the object to be heated to the changed set temperature is satisfied when the set temperature of the object to be heated is changed, the case where the set temperature is changed includes a start-up of the substrate processing apparatus.
Preferably, the determination unit determines that the limiting function is enabled when a condition regarding a current power usage of the substrate processing system is satisfied in addition to the above condition.
The determination unit estimates the current power usage based on information on a current state of each of the plurality of substrate processing apparatuses, and the condition regarding the current power usage is a condition that a difference between a maximum power allowed by the substrate processing system and the measured current power usage is smaller than a predetermined value.
The present power-use determining means may be provided, and the condition regarding the present power-use may be a condition that a difference between a maximum power allowed by the substrate processing system and the measured present power-use is smaller than a predetermined value.
Another aspect of the present invention provides a substrate processing method of a substrate processing system, characterized in that: the substrate processing system includes a plurality of substrate processing apparatuses for processing substrates, and the substrate processing apparatus includes: a heating unit that heats a target object including a mounting table on which a substrate is mounted; and a temperature control unit that controls the heating unit and adjusts the temperature of the heated object to a set temperature while limiting the driving power of the heating unit to be equal to or lower than an allowable power, wherein the substrate processing system includes a control device that controls the plurality of substrate processing apparatuses, the temperature control unit of the substrate processing apparatus has a limiting function that limits the driving power to be equal to or lower than a limited power lower than the allowable power, the control device has a determination unit that determines whether or not the limiting function is enabled, and the determination unit determines that the limiting function is enabled when at least a condition that a step to be executed is a step of raising the temperature of the heated object to the set temperature after the change, when the set temperature is changed, including when the substrate processing apparatus is started up, is satisfied,
the substrate processing apparatus performs a step of increasing the temperature of the substrate in response to a determination that the limiting function is effective, while limiting the driving power of the heating unit to the limit power or less.
Effects of the invention
According to the present invention, it is possible to provide a substrate processing system which does not require a long time and uses a small-capacity power supply device to raise a temperature of a heated object such as a mounting table on which a substrate is mounted to a changed set temperature when the set temperature is changed including when the apparatus is started, and a substrate processing apparatus which implements the system.
Drawings
Fig. 1 is a schematic view showing a configuration of a substrate processing system according to a first embodiment of the present invention.
Fig. 2 is a hardware configuration diagram of the main controller of fig. 1.
Fig. 3 is a hardware configuration diagram of the substrate processing system of fig. 1.
Fig. 4 is a longitudinal sectional view of the process module of fig. 1.
FIG. 5 is a functional block diagram of the processing module, controller and main controller of FIG. 1.
Fig. 6 is a diagram for explaining a limiting function of the temperature control unit of fig. 5.
Fig. 7 is a flowchart showing an example of processing performed by the controller and the main controller when execution of processing or the like is requested.
Fig. 8 is a functional block diagram for explaining a substrate processing system in the third embodiment of the present invention.
Fig. 9 is a functional block diagram for explaining a substrate processing system in the fourth embodiment of the present invention.
Description of the reference numerals
10 substrate processing system
100 host
200 Main controller (EC)
205ROM
210RAM
215CPU
220 bus
225 internal interface
230 external interface
250 storage part
255 input unit
260 judging part
260a calculating part
265 substrate processing execution part
270 communication part
275 output unit
300 a-d controller
350 temperature control part
355 storage part
400 a-d Process Modules (PM)
440 a-d mounting table
451 heating part
451a mounting table heater
451b modular heater
452 Power supply part
452a power supply unit
452b power supply unit
800 measuring device.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description thereof will be omitted. The present invention is not limited to the embodiments described below.
In the following description, a process of forming a Ti film (or TiN film) on a semiconductor wafer (hereinafter, wafer) as a substrate will be described as an example.
(first embodiment)
Fig. 1 is a schematic view showing a configuration of a substrate processing system according to a first embodiment of the present invention.
The substrate processing system 10 includes a host 100, a main controller (hereinafter, referred to as EC200 (equipment controller)), 4 controllers 300a to d, and 4 processing modules (hereinafter, referred to as pm (process module))400a to d. The host 100 is connected to the EC200 via a network 500 such as the internet. The EC200 and the controllers 300a to d are connected via a network 600 such as a lan (local area network).
The host computer 100 manages the entire substrate processing system 10 such as data management. The EC200 is an example of the "control device" in the present invention, and performs the following management: the recipe (process recipe) used for controlling the film formation process of the substrate is stored, and the history of the used recipe is stored while transmitting an instruction for controlling the film formation process to the controllers 300a to d according to the recipe.
The controllers 300a to d control the PMs 400a to d, respectively, based on commands transmitted from the EC200, and the PMs 400a to d perform film formation processes on the wafers W loaded under the control. Process data (e.g., temporal changes in temperature, pressure, gas flow rate, etc.) is sent from the controllers 300 a-d to the host 100 via the EC 200.
The PMs 400a to d and the controllers 300a to d corresponding to the PMs 400a to d constitute a "substrate processing apparatus" according to the present invention.
Fig. 2 is a hardware configuration diagram of the EC 200. The hardware configurations of the host 100 and the controllers 300a to d are not shown, but are similar to those of the EC 200.
As shown, EC200 includes ROM (read Only memory)205, RAM (random Access memory)210, CPU (Central Processing Uint)215, bus 220, internal interface (I/F)225, and external I/F230.
The ROM205 stores a basic program executed by the EC200, a program started in an abnormal state, a processing recipe, and the like. Various programs and data are accumulated in the RAM 210. The ROM205 and the RAM210 are examples of storage devices, and may be storage devices of EEPROM, optical disks, magneto-optical disks, and the like.
The CPU215 controls the film formation process of the substrate according to the process recipe. The bus 220 is a path through which information is exchanged among the devices of the ROM205, the RAM210, the CPU215, the internal interface 225, and the external interface 230.
The internal interface 225 outputs data related to the film formation process from the keyboard 710 or the touch panel 715 by an operation of the operator, and outputs necessary data to the monitor 720 or the speaker 725. The external interface 230 performs data reception and transmission with the host 100 connected to the network 500, and performs data reception and transmission with the controllers 300a to d connected to the network 600.
Fig. 3 is a hardware configuration diagram of the substrate processing system 10 for explaining the hardware configuration of the PM400 a.
As shown in the drawing, the substrate processing system 10 includes a transport system H for carrying in and out the wafer W and a processing system S for performing a film formation process on the wafer W. The transfer system H and the processing system S are connected by load lock chambers 401a and 401 b.
The conveyance system H includes a cassette stage 410 and a conveyance stage 420. The cartridge container 411 is placed on the cartridge mounting table 410. The cassette container 411 can accommodate, for example, up to 25 wafers W in multiple stages.
The transfer system 420 is provided with a wafer transfer mechanism 421 for transferring the wafer W. The wafer transfer mechanism 421 has 2 transfer arms 421a and 421b for holding the wafer W substantially horizontally, and transfers the wafer W while holding the wafer W by one of the transfer arms 421a and 421 b.
The processing system S is provided with a transfer chamber 430 and 4 PMs 400a to d. The transfer chamber 430 has a closed structure, for example, a substantially polygonal shape (hexagonal shape in the illustrated example) when viewed from above. The transfer chamber 430 is connected to the PMs 400a to d through a gate valve that can be hermetically sealed. Next, the transfer chamber 430 is provided with a wafer transfer mechanism 431 for transferring the wafer W. The wafer transfer mechanism 431 includes 2 transfer arms 431a and 431b that hold the wafer W substantially horizontally, and transfers the wafer W while holding the wafer W by one of the transfer arms 431a and 431 b.
The PMs 400a to d are provided with mounting tables 440a to d on which wafers W are mounted, respectively.
The transfer chamber 430 and the chambers of the PMs 400a to d are evacuated to desired levels.
With the above configuration, the processing system S carries in the wafers W from the load lock chambers 401a and 401b to the PMs 400a to d via the transfer chamber 430 by using the arm 431a, performs the film formation process while being mounted on the mounting tables 440a to d, and then carries out the wafers W from the load lock chambers 401a and 401b via the transfer chamber 430 again.
In this embodiment, the wafer W is carried into the PM400a or PM400c to perform the film formation process of the Ti film, and then carried into the PM400b or PM400d to perform the process of nitriding the Ti film to form the TiN film. The PMs 400a d may be apparatuses that perform the film formation process described above, or may be apparatuses that perform other types of film formation.
Fig. 4 is a longitudinal sectional view of each of the PMs 400 a-d.
The PMs 400a to d have a substantially cylindrical cavity C configured to be airtight, and mount tables 440a to d for mounting the wafer W therein as described above are provided therein. The tables 440a to d are made of, for example, a ceramic such as AlN and are supported by a cylindrical support member 450.
Table heaters 451a are embedded in the tables 440a to d. The stage heater 451a is connected to a power supply unit 452a outside the cavity C, and the stage heater 451a is driven to generate heat by an ac voltage output from the power supply 452a, thereby heating and maintaining the temperatures of the stages 440a to d to a set temperature defined in the processing recipe.
Further, a block heater (see reference numeral 451b in fig. 5) is provided in the cavity C and an exhaust line from the cavity C to an exhaust device 480 described later, and the block heater is connected to a power supply unit (see reference numeral 452b in fig. 5) other than the power supply unit 452 a. The module heater opposite to the cavity C is provided, for example, at the top wall portion. The ceiling wall portion of the cavity C or the exhaust line is heated to a set temperature by the module heater and maintained.
Although not shown, temperature sensors such as thermocouples for measuring the temperature of the object to be heated are provided on the mounting tables 440a to d and the top wall portion, in order to heat and hold the object to be heated such as the mounting tables 440a to d to a set temperature.
A shower head 460 is provided on the ceiling wall of the cavity C via an insulating member 453. The spray head 460 is comprised of an upper block 461, a middle block 462 and a lower block 463.
A gas passage 461a and a gas passage 461b are formed in the upper block 461. A gas passage 462a communicating with the gas passage 461a and a gas passage 462b communicating with the gas passage 461b are formed in the middle block 462. A plurality of injection holes 463a and 463b communicating with the gas passage 462a and the gas passage 462b, respectively, are alternately formed in the lower block 463. The showerhead 460 is connected to a gas supply mechanism 470 via gas lines 464a, 464 b.
The gas supply mechanism 470 includes gas supply sources 471a to e, a plurality of valves 472, and a plurality of main controllers 473, and selectively supplies the process gas from the gas supply source into the cavity C by controlling the opening and closing of the valves 472. In addition, each main controller 473 controls the flow rate of the process gas supplied thereto, thereby adjusting the process gas to a desired concentration.
In the gas supply source, ClF3The gas supply source 471a supplies ClF as a purge gas3Gas, TiCl4The gas supply source 471b supplies TiCl containing Ti for forming the Ti film4The Ar gas supply source 471c supplies Ar gas as an excited plasma gas. In addition, H2The supply source 471d supplies a reducing gas H2，NH3A gas supply source 471e for supplying NH containing N for nitriding the Ti film3A gas.
ClF3Gas supply 471a, TiCl4The gas supply source 471b and the Ar gas supply source 471c are connected to the gas line 464 a. H2Supply sources 471d and NH3The gas supply source 471e is connected to the gas line 464 b. Then, TiCl4Although not shown, the gas supply source 471b is connected to the exhaust device 480 through a gas line other than the above.
The shower head 460 is connected to a high frequency power source 491 via an adapter 490. On the other hand, electrodes 492 as counter electrodes of the head 460 are embedded in the stages 440a to d. A high-frequency power supply 494 is connected to the electrode 492 via an adapter 493, and a bias voltage is generated by supplying the high-frequency power supply 494 to the electrode 492.
In the cavity C, an exhaust pipe 481 is provided on the bottom wall surface thereof, and the exhaust pipe 481 is connected to an exhaust device 480 including a vacuum pump. The evacuation device 480 evacuates the gas in the cavity C through the evacuation pipe 481, thereby reducing the pressure in the cavity C to a predetermined degree of vacuum.
According to the above configuration, the process gas supplied from the gas supply mechanism 470 to the cavity C through the showerhead 460 is converted into plasma by the high-frequency power supplied from the high-frequency power supply 491 to the showerhead 460, and the film formation process is performed on the wafer W by the plasma. For example, when the PM400a is formed into a Ti film, the wafer W is transported and then is removed from TiCl4TiCl supplied from the gas supply source 471b4The gas is carried by the Ar gas and is injected into the cavity C from the injection hole 463a through the gas line 464a and the gas passages 461a and 462 a. On the other hand, from H2H supplied from a supply source 471d2The gas is injected from the injection hole 463b into the cavity C through the gas line 464b and the gas passages 461b and 462 b. Thus, TiCl4Gas and H2The gases are completely independently supplied into the cavity C, and are mixed and plasma-converted into a Ti film (TiSi) on the wafer W by high-frequency power after being supplied into the cavity C2A film).
The wafer W having the Ti film formed as described above is then carried to the PM400b as necessary, and subjected to nitriding treatment on the surface thereof. At this time, the Ar gas is injected into the cavity C from the plurality of injection holes 463a through the gas line 464a and the gas passages 461a and 462a, and NH is injected3Gas and H2Gas is injected into the cavity C from the plurality of injection holes 463b through the gas line 464b and the gas passages 461b and 462 b. The supplied gas is converted into plasma by high-frequency power, and thereby the wafer W is subjected to nitriding treatment (TiN film formation treatment). After a predetermined number of wafers W are formed, ClF is supplied into the cavity C3And gas purging the cavity C.
Fig. 5 is a functional configuration diagram showing the respective functions of the PMs 400a to d, the controllers 300a to d, and the EC200 in blocks. Only the main part of the present embodiment is illustrated.
The PMs 400 a-d have functions shown by the heating section 451 and the power supply section 452. The heating unit 451 is a portion that heats and holds a target object such as a wafer or a cavity to a predetermined temperature, and is configured by a heating mechanism such as a stage heater 451a and a module heater 451 b. The power supply unit 452 supplies power to the heating unit 451, and includes a power supply unit 452a that supplies power to the stage heater 451a, a power supply unit 452b that supplies power to the block heater 451b, and the like.
The controllers 300a to d have functions shown by the blocks of the temperature control section 350 and the storage section 355. The temperature control unit 350 controls the heating unit 451 of the PMs 400 a-d to adjust the temperature of the object to be heated such as the mounting table to a set temperature. Specifically, the temperature control unit 350 acquires temperature information of the object to be heated from a temperature sensor, not shown, that measures the temperature of the object to be heated, and adjusts the object to be heated to a set temperature by controlling the output of the power supply unit 452 corresponding to the heating unit 451, based on the temperature information of the object to be heated and the set temperature information.
When the temperature of the object to be heated is adjusted to the set temperature, the temperature control unit 350 controls the heating unit 451 of the PMs 400 a-d while limiting the power supplied to the heating unit 451 to be less than or equal to a preset allowable power. Specifically, the temperature control unit 350 controls the heating unit to adjust the temperature of the object to be heated to a set temperature while limiting the drive current and the drive voltage of the heating unit 451 to predetermined allowable voltage values and allowable current values, respectively.
Next, the temperature control unit 350 has the following functions (hereinafter, a limiting function): the drive power is set to be lower than the limit power lower than the allowable power, specifically, the drive voltage value and the drive current value are set to be lower than the limit voltage lower than the allowable voltage value and lower than the limit current lower than the allowable current value, respectively. The limit voltage value and the limit current value are stored in the storage section 355. In any case, whether or not the restriction function is used will be described later.
The EC200 has functions represented by respective blocks of the storage section 250, the input section 255, the determination section 260, the substrate process execution section 265, the communication section 270, and the output section 275.
The storage unit 250 stores a processing recipe 250a indicating the processing procedure of the substrate and the like. In the process recipe 250a, the set temperature of the tables 440a to d, the set temperature of the cavity C heated by the module heater 451b, and the set temperature of the exhaust line (hereinafter, the set temperature of the module) are included for each process. The recipe 250a is stored not only in connection with the film formation process but also in use for the startup process of the PMs 400 a-d. The startup process may be a process in which the PM moves from the maintenance state to the processable state, and in this process, a step of raising the temperature of the object to be heated from a temperature such as normal temperature to a set temperature, or the like, is performed.
The input unit 255 receives a request for processing by an operator operating the keyboard 710 or the touch panel 715.
Determination unit 260 determines whether or not the limiting function of temperature control unit 350 is enabled. For example, the determination unit 260 determines to enable the limiting function of the temperature control unit 350 when the requested process is a start-up process or a process having a higher set temperature of the object to be heated such as a mounting table than the currently executed process.
The substrate process execution section 265 controls the execution of the process based on the determination result of the determination section 260 and the order of the process recipes 250 a.
The communication section 270 transmits the control signal output from the substrate processing execution section 265 to the controller 300. The controller 300 transmits a drive signal corresponding to the control signal, such as the temperature control unit 350, to the power supply unit 452 and the like in the PMs 400 a-d, and operates the respective units according to the drive signals PM400 a-d, thereby performing the film formation process on the wafer in the cavity.
When a trouble occurs in each process, the output unit 275 outputs the trouble to the monitor 720 or the speaker 725.
Fig. 6 is a diagram for explaining the restriction function of the temperature control unit 350. Fig. 6 (a) shows temporal changes in the total current of the PMs 400a to d and the current corresponding to the heating means when the limiting function of the temperature control unit 350 is disabled and the PMs 400a to d are activated, and fig. 6 (B) shows temporal changes in the limiting function of the temperature control unit 350 at the same time.
In the substrate processing system of the present embodiment, when the set temperature of the object to be heated is changed, for example, at the time of starting the substrate processing apparatus, the limiting function of the temperature control unit 350 is activated in the step of raising the temperature of the object to be heated to the changed set temperature. Specifically, in the substrate processing system of the present embodiment, the result of the determination by the determination section 260 is: the required process is a process in which the temperature of the heated body such as the mounting table is increased to the changed set temperature when the process is started or when the set temperature of the heated body is higher than the currently executed process, the limiting function of the temperature control unit 350 is activated.
For example, when the requested process is the start-up process, as shown in fig. 6 (a) and 6 (B), the total current in the PMs 400a to d requested for the process can be suppressed in the step of raising the temperature of the object to be heated to the changed set temperature, as compared with the case of invalidating the limit function.
Although not shown in the drawings, when the required process is a process having a higher set temperature of the object to be heated such as a mounting table than the currently executed process, the same result can be obtained by enabling the limiting function in the step of raising the temperature of the object to be heated to the changed set temperature.
In addition, the above-described temperature raising step consumes the most power among the steps performed by the substrate processing system.
Therefore, by using the limit function as described above, the power supply apparatus can be downsized.
Next, in the substrate processing system according to the present embodiment, in order to allow the temperature increase step to be performed simultaneously in the plurality of PMs 400a d, all of the PMs 400a d can be completed in a short time in a processable state, as compared with the case where the temperature is increased sequentially for each PM.
In practice, the functions of the EC200 described above can be realized by the CPU215 of fig. 2 executing a control program in which a processing procedure for realizing the above-described functions is recorded, or by controlling an IC or the like, not shown, for realizing the functions. For example, in the present embodiment, the functions of the determination unit 260 and the substrate processing execution unit 265 can be realized by actually executing a program or a processing recipe in which processing procedures for realizing the above-described functions are recorded by the CPU215 in fig. 2.
The functions of the controller 300 can be realized by the CPU, as in the EC 200.
Next, with reference to fig. 7, a process will be described, which is: when the start-up process is requested, or when a process with a higher set temperature of the object to be heated than the currently executed process is requested, the processes performed by the controllers 300a to d and the EC200 are performed. Fig. 7 is a flowchart showing an example of the above-described processing.
As shown in the figure, when the EC200 starts the process or requests the process having the set temperature of the object higher than the currently executed process, in other words, when the input unit 255 inputs the process (step S101), the determination unit 260 determines that the limiting function is enabled in the temperature increasing step of increasing the temperature to the changed set temperature of the process (step S102). The processing in which the set temperature of the heated body is higher than the processing currently being executed may include not only the processing in which both the set temperature of the mounting table and the set temperature of the module are higher than the current temperature, but also the processing in which the set temperature of the module is not changed from the current temperature and only the set temperature of the mounting table is higher than the current temperature.
Then, the substrate process execution unit 265 transmits a control signal for enabling the limit function and a control signal relating to the set temperature to the controllers 300a to d corresponding to the PMs 400a to d that execute the requested process via the communication unit 270 (step S103). In the following, the PM400a is referred to as a device that executes a required process.
When the temperature control unit 350 of the controller 300a receives a control signal for enabling the limiting function (step S201), the allowable current value and the allowable voltage value are rewritten into the limiting current value and the limiting voltage value with reference to the storage unit 355 (step S202). The allowable current value and the allowable current (voltage) value and the limited current value and the limited voltage value of the stage heater 451a corresponding to the driving current and the driving voltage may be different from or the same as those of the block heater 451 b. In addition, when the temperature of the object to be heated is controlled for each object to be heated in a multi-channel manner, the allowable current value and the allowable voltage value, and the limit current value and the limit voltage value can be set for each channel.
The limit current value and the limit voltage value are preferably set such that a parameter in the program, that is, a normal operator cannot be changed according to a preset value. If a typical operator can make a change, the total power used by the entire substrate processing system may exceed the allowable power of the entire system when erroneously changed and set to a higher value.
Next, the temperature control unit 350 controls the heating unit 451 of the PM400a based on the control signal relating to the set temperature and the output from the temperature sensor while limiting the drive current and the drive voltage of the heating unit 451 to the limit current value and the limit voltage value, respectively (step S203). Then, by controlling the heating unit 451 as described above, the temperature of the object to be heated is raised to the set temperature, and then, when the temperature is stabilized at the set temperature, that is, when the temperature rise is completed (yes in step S204), the temperature control unit 350 rewrites the limit current value and the limit voltage value into the original allowable current value and allowable current (voltage to be) value (step S205). The temperature control unit 350 transmits information indicating that the temperature increase step is completed to the substrate processing execution unit 265 of the EC200 (step S206).
When the substrate processing execution unit 265 of the EC200 receives the information indicating that the temperature increase step is completed (step S104), and when the requested process is the startup process, the startup process is completed, or the requested process is other than the startup process, the substrate processing execution unit transmits a control signal for executing the process to the controller 300a, and causes the PM400a to execute the requested process (step S105).
When a process is requested in which the set temperature of the object is not changed from the currently executed process and a process is requested in which the set temperature of the object is lower than the currently executed process, the determination unit 260 determines that the limiting function of the temperature control unit 350 is disabled. Then, as in the conventional technique, a control signal is sent from the substrate processing execution unit 265 to the controller 300a based on the processing recipe 250a of the requested process, and the PM400a is caused to execute the requested process.
(second embodiment)
In the first embodiment, the mounting table as the object to be heated is determined in common with the cavity or the like to determine whether or not the limiting function of the temperature control unit 350 is enabled or disabled. On the other hand, in the substrate processing system according to the second embodiment, whether or not the limiting function of the temperature control unit 350 is enabled or disabled is determined for each object to be heated.
Thus, the restriction function is not made effective for the heating mechanism that requires time to raise the temperature to the set temperature; the restriction function is enabled for the heating means for which temperature rise is completed in a short time, and the time for completing temperature rise of the heating means, which requires a long time for temperature rise, is not lengthened in accordance with the timing for completing temperature rise between the heating means.
In addition, when the temperature of the object to be heated is controlled for each object to be heated in a multi-pass manner, whether or not the limiting function is effective can be determined for each pass.
(third embodiment)
Fig. 8 is a functional configuration diagram showing the functions of the PMs 400a through d, the controllers 300a through d, and the EC200 in the third embodiment in blocks.
In the third embodiment, the EC200 stores information (state information 250b) indicating the current state (status) for each of the PMs 400a to d in the storage unit 250. In the state, "at the time of temperature rise" indicating a period from when the set temperature is changed to when the set temperature is changed in the temperature rise step, "at the time of processing" indicating a period during which the processing is in progress, and "at the time of idle" indicating a period in the space, the state information 250b is rewritten by the substrate processing execution unit 265 when the processing is requested, after the temperature rise step is completed, or the like.
Further, the storage unit 250 stores information of the estimated power usage value (power usage value for each state 250c) in each of the above-described states. Specifically, the storage unit 250 stores estimated values of used power corresponding to "temperature rise time", "processing time", and "idle time", respectively.
Further, the storage unit 250 stores information (total capacity information 250d) of the maximum power value allowed in the entire substrate processing system, that is, the maximum capacity of the power supply equipment included in the substrate processing system.
The determination unit 260 of the EC200 includes a calculation unit 260a, and the calculation unit 260a calculates and estimates the current power used by the entire substrate processing system based on the current state information of the PMs 400 a-d when the processing is requested. Specifically, when the processing is requested, the calculation unit 260a refers to the storage unit 250, acquires the state information of the PMs 400a to d, acquires the estimated power usage values corresponding to the states, sums them, and calculates the current power usage of the entire substrate processing system. Next, referring to the storage unit 250, the calculation unit 260a calculates the difference between the estimated current power usage of all the substrate processing systems and the maximum capacity of the power supply apparatus.
In other words, the determination unit 260 of the EC200 according to the first embodiment determines that the limiting function is enabled in the temperature increasing step when the condition (the condition regarding the step) that the temperature of the object to be heated is increased to the changed set temperature including the time of the start-up process is satisfied when the step to be executed is the step of increasing the temperature of the object to be heated to the changed set temperature.
In contrast, when both the condition related to the step and the condition related to the current power used in the substrate processing system are satisfied, the determination unit 260 of the present embodiment determines that the limiting function is enabled in the temperature increasing step when the set temperature is changed. The condition related to the current power usage in the present embodiment is that the difference between the maximum capacity of the power supply equipment and the estimated power usage calculated by the calculation unit 260a is smaller than a predetermined value. When both the condition related to the above-described step and the condition related to the current power usage are satisfied, it is determined that the limit function is enabled. Then, the temperature raising step is performed in a state where the limiting function is enabled.
At this time, the limiting function may be enabled for the PM whose state has become "warming up".
The above configuration has the following effects. That is, only when all of the PMs 400 a-d constituting the substrate processing system are in the temperature raising step, there is a possibility that the total power used by the substrate processing system exceeds the total capacity of the power supply device. Therefore, the determination unit 260 determines that the condition for enabling the restriction function of the controller 300 is: it is predicted that all of the PMs 400 a-d are in the temperature increasing step when the startup process is executed, that is, that the condition that the difference between the maximum capacity of the power supply facility and the estimated power usage calculated by the calculation unit 260a is smaller than the predetermined value is satisfied. As described above, the time from when the limiting function is enabled to when the temperature raising step is completed is long, but the limiting function can be enabled only when necessary by configuring as in the present embodiment, and therefore, the power supply equipment can be reduced in capacity while the time until when the temperature raising step is completed is prevented from being as long as possible.
In the present embodiment, a plurality of limit power values may be stored in the storage unit 355 in advance, and information on the difference between the maximum capacity of the power supply apparatus and the estimated power usage calculated by the calculation unit 260a may be transmitted to the temperature control unit 350 of the controller 300 a. Then, the temperature control unit 350 of the controller 300a may select the limiting power value actually used in the limiting function from a plurality of limiting power values stored in advance based on the difference.
(fourth embodiment)
Fig. 9 is a functional block diagram of a substrate processing system in a fourth embodiment.
The substrate processing system of fig. 9 has a measurement device 800 for measuring the current power used in the entire system.
When the processing is requested, the calculating unit 260a of the determining unit 260 of the EC200 refers to the storage unit 250 to calculate the difference between the power consumption of the entire substrate processing system measured by the measuring device 800 and the maximum capacity of the power feeding device.
The determination unit of the present embodiment determines that the limiting function is enabled in the temperature raising step when the set temperature is changed, when both the condition related to the step and the condition related to the current power used in the substrate processing system are satisfied, as in the determination unit of the third embodiment. However, unlike the condition of the third embodiment, the condition relating to the current power usage in the present embodiment is a condition that the difference between the maximum capacity of the power feeding device and the total power usage of the substrate processing system measured by the measuring apparatus 800 is smaller than a predetermined value. If both the condition related to the above-described step and the condition related to the current power usage are satisfied, it is determined that the restriction function is enabled. Then, the temperature raising step is performed in a state where the limiting function is enabled.
The above configuration has the following effects. That is, only when all of the PMs 400 a-d constituting the substrate processing system are in the temperature raising step, there is a possibility that the total power used by the substrate processing system exceeds the maximum capacity of the power supply device. Therefore, the determination unit 260 determines that the condition for enabling the restriction function of the controller 300 is: it is predicted that all of the PMs 400 a-d are in the temperature increasing step when the startup process is executed, that is, a condition that the difference between the maximum capacity of the power supply facility and the measured current power usage is smaller than a predetermined value is satisfied. As described above, the time from when the limiting function is enabled to when the temperature raising step is completed is long, but the limiting function can be enabled only when necessary by configuring as in the present embodiment, and therefore, the power supply equipment can be reduced in capacity while the time until when the temperature raising step is completed is prevented from being as long as possible.
Industrial applicability of the invention
The present invention is useful in a technique for performing a process such as a film forming process on a substrate such as a wafer.
Claims (4)
1. A substrate processing system, characterized by:
having a plurality of substrate processing apparatuses for processing substrates,
the substrate processing apparatus includes:
a heating unit that heats a target object including a mounting table on which a substrate is mounted; and
a temperature control unit for controlling the heating unit to adjust the temperature of the object to be heated to a set temperature while limiting the driving power of the heating unit to be equal to or lower than an allowable power,
the substrate processing system has a control device that controls the plurality of substrate processing devices,
the temperature control unit of the substrate processing apparatus has a limiting function of limiting the driving power to a limiting power lower than the allowable power,
the control device has: a determination unit for estimating the current power used by the substrate processing system based on the information on the current status of each of the plurality of substrate processing apparatuses and determining whether or not the limit function is enabled,
the determination unit determines that the limiting function is enabled in the step when a condition that the step to be executed is a step of raising the temperature of the heated body to the set temperature after the change and a condition that a difference between the maximum power allowed by the substrate processing system and the estimated current power used is smaller than a predetermined value are satisfied, the condition being that the step to be executed is a change in the set temperature of the heated body including a start-up of the substrate processing apparatus.
2. A substrate processing system, characterized by:
having a plurality of substrate processing apparatuses for processing substrates,
the substrate processing apparatus includes:
a heating unit that heats a target object including a mounting table on which a substrate is mounted; and
a temperature control unit for controlling the heating unit to adjust the temperature of the object to be heated to a set temperature while limiting the driving power of the heating unit to be equal to or lower than an allowable power,
the substrate processing system has a control device for controlling the plurality of substrate processing devices and a determination device for measuring the current power usage of the substrate processing system,
the temperature control unit of the substrate processing apparatus has a limiting function of limiting the driving power to a limiting power lower than the allowable power,
the control device has a determination unit for determining whether or not to enable the restriction function,
the determination unit determines that the limiting function is enabled in the step when a condition that the step to be executed is a step of raising the temperature of the heated body to the set temperature after the change and a condition that a difference between the maximum power allowed by the substrate processing system and the measured current power usage is smaller than a predetermined value are satisfied, the condition being that the step to be executed is a change in the set temperature of the heated body including a start-up of the substrate processing apparatus.
3. A substrate processing method of a substrate processing system, characterized by:
the substrate processing system has a plurality of substrate processing apparatuses that process substrates,
the substrate processing apparatus includes:
a heating unit that heats a target object including a mounting table on which a substrate is mounted; and
a temperature control unit that controls the heating unit while limiting the driving power of the heating unit to be equal to or lower than an allowable power, and adjusts the temperature of the object to be heated to a set temperature,
the substrate processing system has a control device that controls the plurality of substrate processing devices,
the temperature control unit of the substrate processing apparatus has a limiting function of limiting the driving power to a limiting power lower than the allowable power,
the control device has: a determination unit for estimating the current power used by the substrate processing system based on the information on the current status of each of the plurality of substrate processing apparatuses and determining whether or not the limit function is enabled,
the determination unit determines that the limiting function is enabled when a condition that the step to be executed is a step of raising the temperature of the heated body to the set temperature after the change and a condition that a difference between a maximum power allowed by the substrate processing system and the estimated current power used is smaller than a predetermined value are satisfied, the condition being that the step to be executed is a change in the set temperature of the heated body including a start-up of the substrate processing apparatus,
the substrate processing apparatus performs a step of increasing the temperature of the substrate while limiting the driving power of the heating unit to the limit power or less and determining that the limiting function is effective.
4. A substrate processing method of a substrate processing system, characterized by:
the substrate processing system has a plurality of substrate processing apparatuses that process substrates,
the substrate processing apparatus includes:
a heating unit that heats a target object including a mounting table on which a substrate is mounted; and
a temperature control unit that controls the heating unit while limiting the driving power of the heating unit to be equal to or lower than an allowable power, and adjusts the temperature of the object to be heated to a set temperature,
the substrate processing system has a control device for controlling the plurality of substrate processing devices and a determination device for measuring the current power usage of the substrate processing system,
the temperature control unit of the substrate processing apparatus has a limiting function of limiting the driving power to a limiting power lower than the allowable power,
the control device has a determination unit for determining whether or not to enable the restriction function,
the determination unit determines that the limiting function is enabled when a condition that the step to be executed is a step of raising the temperature of the heated body to the set temperature after the change and a condition that a difference between a maximum power allowed by the substrate processing system and the measured current power usage is smaller than a predetermined value are satisfied, the condition including a start-up of the substrate processing apparatus when the set temperature is changed,
the substrate processing apparatus performs a step of increasing the temperature of the substrate while limiting the driving power of the heating unit to the limit power or less and determining that the limiting function is effective.
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| JP3491002B2 (en) * | 1995-06-08 | 2004-01-26 | 東京エレクトロン株式会社 | Operation control method and apparatus for a plurality of power usage systems |
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| JP2005125340A (en) * | 2003-10-22 | 2005-05-19 | Senju Metal Ind Co Ltd | Reflow furnace and its starting method |
| JP4887404B2 (en) * | 2009-06-16 | 2012-02-29 | 東京エレクトロン株式会社 | Temperature control method for heating apparatus for substrate processing system, program, computer recording medium, and substrate processing system |
| JP5778519B2 (en) * | 2011-08-11 | 2015-09-16 | アズビル株式会社 | Energy sum suppression control device, power sum suppression control device and method |
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| JPH11111823A (en) * | 1997-10-06 | 1999-04-23 | Dainippon Screen Mfg Co Ltd | Heat treatment device for substrate |
| EP1032945A1 (en) * | 1997-11-06 | 2000-09-06 | Applied Materials, Inc. | Method and apparatus for reducing thermal gradients within a ceramic wafer support pedestal |
| JP2004009099A (en) * | 2002-06-06 | 2004-01-15 | Tamura Seisakusho Co Ltd | Heating device |
| JP2010286179A (en) * | 2009-06-11 | 2010-12-24 | Senju Metal Ind Co Ltd | Electric furnace and method for controlling the same |
| JP2011249633A (en) * | 2010-05-28 | 2011-12-08 | Tokyo Electron Ltd | Heat-up control method, program, computer record medium, and substrate processing system, of heater for substrate processing system |
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| KR20180059352A (en) | 2018-06-04 |
| CN108109940A (en) | 2018-06-01 |
| JP6868376B2 (en) | 2021-05-12 |
| JP2018085474A (en) | 2018-05-31 |
| KR102071771B1 (en) | 2020-01-30 |
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