WO2020213506A1 - Substrate processing device, substrate processing system, and substrate processing method - Google Patents

Abstract

Provided are a substrate processing device, a substrate processing system, and a substrate processing method that improve the stability of substrate processing performance.　A substrate processing device that comprises a chamber, a gas exhaust device that has a rotational-speed-controllable pump and exhausts gas from the chamber, and a control device. The control device adjusts the rotational speed of the pump such that the exhaust speed from inside the chamber to the gas exhaust device is a standard exhaust speed.

Description

Substrate processing equipment, substrate processing system and substrate processing method

The present disclosure relates to a substrate processing apparatus, a substrate processing system, and a substrate processing method.

For example, there is known a substrate processing apparatus that controls the inside of a chamber to a vacuum atmosphere, supplies a processing gas into the chamber, and performs a desired treatment on the substrate in the chamber.

Patent Document 1 discloses a vacuum exhaust device of a vacuum heat treatment device that controls the pressure inside the furnace by controlling the rotation speed of a vacuum pump connected to the furnace body via an exhaust pipeline.

JP-A-2007-315729

On the one hand, the present disclosure provides a substrate processing apparatus, a substrate processing system, and a substrate processing method for improving the stability of substrate processing performance.

In order to solve the above problems, according to one aspect, the control device includes a chamber, a gas exhaust device having a pump capable of controlling the rotation speed and exhausting gas from the chamber, and a control device. Provides a substrate processing device that adjusts the rotational speed of the pump so that the exhaust speed from the inside of the chamber to the gas exhaust device becomes a reference exhaust speed.

According to one aspect, it is possible to provide a substrate processing apparatus, a substrate processing system, and a substrate processing method for improving the stability of the substrate processing performance.

FIG. 6 is a schematic cross-sectional view showing an example of the configuration of the substrate processing apparatus according to the first embodiment. The figure which shows an example of the process sequence in the substrate processing apparatus which concerns on 1st Embodiment. The graph which showed an example of the pressure change in a processing container schematically. The graph which shows an example of the relationship between the flow rate of the gas supplied to the processing container by the time change, and the pressure in a processing container. The plan view which shows an example of the structure of the cluster system which concerns on 2nd Embodiment. The schematic diagram which shows an example of the structure of the cluster system which concerns on 2nd Embodiment. The graph which shows an example of the relationship between the flow rate of the gas supplied to the processing container due to the machine error and the pressure in the processing container. FIG. 6 is a schematic cross-sectional view showing an example of the configuration of the substrate processing apparatus according to the third embodiment.

Hereinafter, a mode for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate description may be omitted.

<Board processing equipment>
The substrate processing apparatus 100 according to the first embodiment will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view showing an example of the configuration of the substrate processing apparatus 100 according to the first embodiment. In the following description, the substrate processing apparatus 100 supplies TiCl ₄ gas, which is a raw material gas, and NH ₃ gas, which is a reducing gas, to a substrate W such as a wafer to form a TiN film on the surface of the substrate W. Atomic Layer Deposition) A device will be described as an example.

The substrate processing device 100 includes a processing container (chamber) 1, a substrate mounting table 2, a shower head 3, a gas exhaust device 4, a processing gas supply unit 5, and a control device 6.

The processing container 1 is made of a metal such as aluminum and has a substantially cylindrical shape. A carry-in outlet 11 for carrying in or out the substrate W is formed on the side wall of the processing container 1, and the carry-in outlet 11 can be opened and closed by a gate valve 12. An annular exhaust duct 13 having a rectangular cross section is provided on the main body of the processing container 1. A slit 13a is formed in the exhaust duct 13 along the inner peripheral surface. Further, an exhaust port 13b is formed on the outer wall of the exhaust duct 13. A top wall 14 is provided on the upper surface of the exhaust duct 13 so as to close the upper opening of the processing container 1. The space between the top wall 14 and the exhaust duct 13 is airtightly sealed with a seal ring 15.

The board mounting table 2 horizontally supports the board W in the processing container 1. The board mounting table 2 has a disk shape having a size corresponding to the board W, and is supported by the support member 23. The substrate mounting table 2 is made of a ceramic material such as aluminum nitride (AlN) or a metal material such as aluminum or a nickel-based alloy, and a heater 21 for heating the substrate W is embedded therein. The heater 21 is supplied with power from a heater power source (not shown) to generate heat. Then, the substrate W is controlled to a predetermined temperature by controlling the output of the heater 21 by the temperature signal of the thermocouple (not shown) provided near the wafer mounting surface on the upper surface of the substrate mounting table 2. It has become.

The substrate mounting table 2 is provided with a cover member 22 made of ceramics such as alumina so as to cover the outer peripheral region of the wafer mounting surface and the side surface of the substrate mounting table 2.

The support member 23 extends from the center of the bottom surface of the substrate mounting table 2 to the lower side of the processing container 1 through a hole formed in the bottom wall of the processing container 1, and the lower end thereof is connected to the elevating mechanism 24. The elevating mechanism 24 allows the substrate mounting table 2 to move up and down via the support member 23 between the processing position shown in FIG. 1 and the transfer position below which the wafer can be conveyed by the alternate long and short dash line. .. Further, a flange portion 25 is attached below the processing container 1 of the support member 23, and the atmosphere inside the processing container 1 is partitioned from the outside air between the bottom surface of the processing container 1 and the collar portion 25 to form a substrate. A bellows 26 that expands and contracts as the mounting table 2 moves up and down is provided.

Near the bottom surface of the processing container 1, three wafer support pins 27 (only two are shown) are provided so as to project upward from the elevating plate 27a. The wafer support pin 27 can be raised and lowered via the lifting plate 27a by the lifting mechanism 28 provided below the processing container 1, and is inserted into the through hole 2a provided in the substrate mounting table 2 at the transport position. It is possible to sink into the upper surface of the substrate mounting table 2. By raising and lowering the wafer support pin 27 in this way, the substrate W is transferred between the wafer transfer mechanism (not shown) and the substrate mounting table 2.

The shower head 3 supplies the processing gas into the processing container 1 in the form of a shower. The shower head 3 is made of metal, is provided so as to face the substrate mounting table 2, and has substantially the same diameter as the substrate mounting table 2. The shower head 3 has a main body 31 fixed to the top wall 14 of the processing container 1 and a shower plate 32 connected under the main body 31. A gas diffusion space 33 is formed between the main body 31 and the shower plate 32, and a gas introduction hole is formed in the gas diffusion space 33 so as to penetrate the center of the main body 31 and the top wall 14 of the processing container 1. 36 is provided. An annular protrusion 34 projecting downward is formed on the peripheral edge of the shower plate 32, and a gas discharge hole 35 is formed on the flat surface inside the annular protrusion 34 of the shower plate 32.

When the board mounting table 2 is present at the processing position, a processing space 37 is formed between the shower plate 32 and the board mounting table 2, and the annular protrusion 34 and the upper surface of the cover member 22 of the board mounting table 2 are close to each other. An annular gap 38 is formed.

The substrate processing device 100 is provided with a gas exhaust device 4 that exhausts gas from the processing container 1. The gas exhaust device 4 includes an exhaust pipe 41, a vacuum pump 42, an APC valve 43, and a pressure sensor 44. At the time of processing, the gas in the processing container 1 reaches the exhaust duct 13 through the slit 13a, and is exhausted from the exhaust duct 13 through the exhaust pipe 41 by the vacuum pump 42 of the gas exhaust device 4.

The exhaust pipe 41 connects the exhaust port 13b of the processing container 1 and the suction port of the vacuum pump 42. The vacuum pump 42 is capable of variable speed control by inverter control. The exhaust pipe 41 is provided with a pressure control (APC: Adaptive Pressure Control) valve (hereinafter, referred to as “APC valve”) 43. The APC valve 43 is a valve whose opening degree can be controlled, and adjusts the pressure in the processing container 1 by adjusting the conductance of the exhaust path.

The pressure sensor 44 is provided in the exhaust pipe 41 on the upstream side of the APC valve 43, and detects the pressure in the exhaust pipe 41. A pressure sensor for detecting the pressure in the processing container 1 may be provided, and a pressure sensor for detecting the pressure in the exhaust pipe 41 on the downstream side (primary side of the vacuum pump 42) of the APC valve 43 is provided. You may.

The processing gas supply unit 5, has a raw material gas supply line L1, the reducing gas supply line L2, the first continuous _{N 2} gas supply line L3, the second continuous _{N 2} gas supply line L4.

The raw material gas supply line L1 extends from the raw material gas supply source GS1 which is a supply source of the TiCl ₄ gas (raw material gas) and is connected to the merging pipe L7. The merging pipe L7 is connected to the gas introduction hole 36. The raw material gas supply line L1 is provided with a mass flow controller M1, a buffer tank T1, and an on-off valve V1 in this order from the raw material gas supply source GS1 side. The mass flow controller M1 controls the flow rate of the TiCl ₄ gas flowing through the raw material gas supply line L1. Buffer tank T1 is to temporarily store the TiCl ₄ gas is supplied in a short time required TiCl ₄ gas. The on-off valve V1 switches the supply / stop of the TiCl ₄ gas during the ALD process.

The reduction gas supply line L2 extends from the reduction gas supply source GS2, which is a supply source of NH ₃ gas (reduction gas), and is connected to the merging pipe L7. The reduction gas supply line L2 is provided with a mass flow controller M2, a buffer tank T2, and an on-off valve V2 in this order from the reduction gas supply source GS2 side. The mass flow controller M2 controls the flow rate of the NH ₃ gas flowing through the reducing gas supply line L2. Buffer tank T2 temporarily storing the NH ₃ gas is supplied in a short time necessary NH ₃ gas. Off valve V2 switches the supply and stop of the NH ₃ gas during the ALD process.

First continuous _{N 2} gas supply line L3 extends from the _{N 2} gas supply source GS3 is a source of _{N 2} gas is connected to a source gas supply line L1. Thus, N ₂ gas is supplied to the source gas supply line L1 side via a first continuous N ₂ gas supply line L3. The first continuous N ₂ gas supply line L3 constantly supplies N ₂ gas during film formation by the ALD method, and functions as a carrier gas for TiCl ₄ gas and also as a purge gas. The first continuous N ₂ gas supply line L3 is provided with a mass flow controller M3, an on-off valve V3, and an orifice F3 in this order from the N ₂ gas supply source GS3 side. The mass flow controller M3 controls the flow rate of N ₂ gas flowing through the first continuous N ₂ gas supply line L3. Orifice F3 refrains from relatively large flow rate of the gas supplied by the buffer tank T1 flows back to the first continuous N ₂ gas supply line L3.

Second continuous _{N 2} gas supply line L4 extends from the _{N 2} gas supply source GS4 is a source of _{N 2} gas is connected to the reducing gas supply line L2. Thus, it supplied with N ₂ gas to the reducing gas supply line L2 side via the second continuous N ₂ gas supply line L4. The second continuous N ₂ gas supply line L4 constantly supplies N ₂ gas during film formation by the ALD method, functions as a carrier gas for NH ₃ gas, and also functions as a purge gas. The second continuous N ₂ gas supply line L4 is provided with a mass flow controller M4, an on-off valve V4, and an orifice F4 in this order from the N ₂ gas supply source GS4 side. The mass flow controller M4 controls the flow rate of N ₂ gas flowing through the second continuous N ₂ gas supply line L4. Orifice F4 refrains from relatively large flow rate of the gas supplied by the buffer tank T2 from flowing back to the second continuous N ₂ gas supply line L4.

The control device 6 controls the operation of each part of the substrate processing device 100. The control device 6 has a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes a desired process according to a recipe stored in a storage area such as RAM. In the recipe, control information of the device for the process condition is set. The control information may be, for example, gas flow rate, pressure, temperature, process time. The recipe and the program used by the control device 6 may be stored in, for example, a hard disk or a semiconductor memory. Further, the recipe or the like may be set in a predetermined position and read in a state of being housed in a storage medium readable by a portable computer such as a CD-ROM or a DVD.

The control device 6 has a processing gas control unit 61, a vacuum pump control unit 62, and an APC valve control unit 63 as control blocks executed by the CPU.

The processing gas control unit 61 controls the supply of the processing gas into the processing container 1 by the processing gas supply unit 5 by controlling the opening and closing of the valves V1 to V4 according to the recipe.

The vacuum pump control unit 62 controls the vacuum pump 42 by an inverter. That is, the vacuum pump control unit 62 inverter-controls the rotation speed of the motor of the vacuum pump 42. Here, the exhaust speed of the vacuum pump 42 is determined by the rotation speed of the motor of the vacuum pump 42. Therefore, the vacuum pump control unit 62 can control the exhaust speed of the vacuum pump 42.

The vacuum pump control unit 62 determines the rotation speed of the motor so that the exhaust speed from the inside of the processing container 1 to the gas exhaust device 4 becomes a preset exhaust speed. Then, the vacuum pump control unit 62 inverter-controls the motor of the vacuum pump 42 so that the rotation speed is determined.

The APC valve control unit 63 controls the opening degree of the APC valve 43 according to the recipe.

Next, the film formation process of the TiN film by the ALD process in the substrate processing apparatus 100 according to the first embodiment will be described. FIG. 2 is a diagram showing an example of a process sequence in the substrate processing apparatus 100 according to the first embodiment. FIG. 2A is a timing chart showing changes in the amount of gas supplied. In FIG. 2A, the horizontal axis represents time and the vertical axis represents gas supply. FIG. 2B is a graph showing the opening degree of the APC valve 43. In FIG. 2B, the horizontal axis represents time and the vertical axis represents the opening degree of the APC valve 43. FIG. 2C is a graph showing the pressure inside the processing container 1. In FIG. 2C, the horizontal axis represents time and the vertical axis represents gas supply.

First, the substrate W is carried into the processing container 1 of the substrate processing apparatus 100. Specifically, the gate valve 12 is in a state where the substrate mounting table 2 heated to a predetermined temperature (for example, 300 ° C. to 700 ° C.) by the heater 21 is lowered to the transport position (indicated by the alternate long and short dash line in FIG. 1). open. Subsequently, the substrate W is carried into the processing container 1 through the carry-in outlet 11 by a transport arm (not shown), and is supported by the wafer support pin 27. When the transport arm retracts from the carry-in outlet 11, the gate valve 12 is closed. Further, the wafer support pin 27 is lowered to mount the substrate W on the substrate mounting table 2. Subsequently, the substrate mounting table 2 is raised to the processing position (shown by a solid line in FIG. 1), and the inside of the processing container 1 is depressurized to a predetermined degree of vacuum. After that, the on-off valves V3 and V4 are opened, and the on-off valves V1, V2 and V5 are closed. Thus, to increase the pressure supplied from the _{N 2} gas supply source GS3, GS4 the first continuous _{N 2} gas supply line L3 and the second continuous _{N 2} gas supply line L4 processing vessel 1 N2 gas through the , Stabilize the temperature of the substrate W on the substrate mounting table 2. At this time, the TiCl ₄ gas is supplied from the raw material gas supply source GS1 into the buffer tank T1, and the pressure in the buffer tank T1 is maintained substantially constant. Further, NH ₃ gas is supplied from the reducing gas supply source GS2 into the buffer tank T2, and the pressure in the buffer tank T2 is maintained substantially constant.

Subsequently, a TiN film is formed by an ALD process using TiCl ₄ gas and NH ₃ gas.

In the ALD process, the TiCl ₄ supply step S1, the first purge step S2, the NH ₃ supply step S3, and the second purge step S4 are repeated for a predetermined cycle to form a TiN film having a desired film thickness on the substrate W. The process of doing.

The TiCl ₄ supply step S1 is a step of supplying the TiCl ₄ gas to the treatment space 37. In TiCl ₄ feed step S1, firstly, with open closing valve V3, V4, from _{N 2} gas supply source GS3, GS4, first continuous _{N 2} gas supply line L3 and the second continuous _{N 2} gas supply line Continue to supply N ₂ gas (continuous N ₂ gas) via L4. Further, by opening the on-off valve V1, TiCl ₄ gas is supplied from the raw material gas supply source GS1 to the processing space 37 in the processing container 1 via the raw material gas supply line L1. At this time, the TiCl ₄ gas is once stored in the buffer tank T1 and then supplied into the processing container 1. As a result, TiCl ₄ gas is adsorbed on the surface of the substrate W.

The first purging step S2 is a step of purging excess TiCl ₄ gas or the like in the processing space 37. In the first purging step S2, N ₂ gas (continuous N ₂ gas) is continuously supplied through the first continuous N ₂ gas supply line L3 and the second continuous N ₂ gas supply line L4. The on-off valve V1 is closed to stop the supply of TiCl ₄ gas. As a result, excess TiCl ₄ gas or the like in the processing space 37 is purged.

The NH ₃ supply step S3 is a step of supplying the NH ₃ gas to the processing space 37. In NH ₃ supply process _{S 3,} while continuing the supply of the _{N 2} gas (continuous _{N 2} gas) through the first continuous _{N 2} gas supply line L3 and the second continuous _{N 2} gas supply line L4, Open the on-off valve V2. Accordingly, supplying the NH ₃ gas into the processing space 37 through the reducing gas supply line L2 from the reducing gas source GS2. At this time, the NH ₃ gas is once stored in the buffer tank T2 and then supplied into the processing container 1. As a result, the TiCl ₄ adsorbed on the substrate W is reduced. The flow rate of the NH ₃ gas at this time can be set to an amount that sufficiently causes a reduction reaction.

The second purging step S4 is a step of purging the excess NH ₃ gas in the processing space 37. The step of supplying a second _{N 2} gas, continues the supply of the _{N 2} gas (continuous _{N 2} gas) through the first continuous _{N 2} gas supply line L3 and the second continuous _{N 2} gas supply line L4 In this state, the on-off valve V2 is closed to stop the supply of NH ₃ gas. As a result, excess NH ₃ gas or the like in the processing space 37 is purged.

Hereinafter, by repeating these steps in a predetermined cycle, a TiN film having a desired film thickness is formed on the substrate W. As shown in FIG. 2B, the opening degree of the APC valve 43 is constant in the ALD process. Further, in the ALD process, the rotation speed of the motor of the vacuum pump 42 (exhaust speed of the vacuum pump 42) is constant.

In this way, the control device 6 maintains the rotation speed of the motor of the vacuum pump 42 by the vacuum pump control unit 62 at a predetermined rotation speed (for example, an output smaller than the maximum output of the vacuum pump 42 at the time of initial installation). The processing gas control unit 61 controls the opening and closing of the valves V1 to V4 while the APC valve control unit 63 maintains the opening degree of the APC valve 43 at a predetermined opening degree (for example, the opening degree smaller than the full open at the time of initial installation). By doing so, the ALD process is executed.

By the way, the substrate processing apparatus 100 is a process of vaporizing and supplying a liquid having a low vapor pressure such as TiCl ₄ gas which is a raw material gas. There is also a process of vaporizing and supplying a solid material as a raw material gas. There is also a process in which by-products and the like are produced by the processing gas. In such a process, as the operating time of the substrate processing apparatus 100 increases, solidified materials, by-products, and the like adhere to the inside of the exhaust pipe 41 and the vacuum pump 42, and the conductance decreases. Further, since the conductance is lowered, the exhaust speed from the inside of the processing container 1 to the gas exhaust device 4 is also lowered as compared with the initial installation. Further, the exhaust speed to the gas exhaust device 4 also fluctuates when the exhaust pipe 41 or the like is cleaned, maintained, or replaced.

FIG. 3 is a graph schematically showing an example of a pressure change in the processing container 1. FIG. 3A shows an example of a pressure change in the processing container 1 at the time of initial installation of the substrate processing apparatus 100. At the time of initial installation, at the end of step S2 (at the start of step S3), the pressure in the processing container 1 is pressure P ₀ , indicating that TiCl ₄ is preferably purged. Similarly, at the end of step S4 (at the start of step S1), the pressure in the processing vessel 1 is pressure P ₀ , indicating that NH ₃ is preferably purged.

FIG. 3B shows an example of a pressure change in the substrate processing apparatus 100 after the lapse of operating time. Even if the rotation speed of the vacuum pump 42, the opening degree of the APC valve 43, and the opening and closing of the valves V1 to V4 are controlled under the same conditions as at the time of initial installation because the conductance of the exhaust pipe 41 etc. decreases as the operating time elapses. , has risen by an amount corresponding to the pressure difference ΔP than the pressure P ₀ is the pressure in the initial state in (starting step S3) at the end of step S2. Therefore, the supply of NH ₃ may be started before the TiCl ₄ in the processing container 1 is sufficiently purged. Further, although not shown, the supply of TiCl ₄ may be started before the NH ₃ in the processing container 1 is sufficiently purged even from the end of step S4 to the start of step S1.

For this reason, TiCl ₄ and NH ₃ are mixed in the processing container 1, and the desired ALD reaction cannot be obtained, so that the same film formation performance as in the initial installation may not be obtained. For example, in step S3, the supplied NH ₃ reacts with TiCl ₄ in the processing container 1 that could not be completely purged and is consumed, so that the reaction between TiCl ₄ adsorbed on the surface of the substrate W and NH ₃ May decrease and the film formation speed may decrease. Further, in step S1, the supplied TiCl ₄ reacts with NH ₃ in the processing container 1 that could not be completely purged and is consumed, so that the TiCl ₄ adsorbed on the surface of the substrate W is reduced and the film formation rate is increased. May decrease.

Here, when the opening degree of the APC valve 43 provided in the exhaust pipe 41 is increased to adjust the conductance to be equal to that at the time of initial installation in response to the decrease in conductance, there is a limit to the increase in opening degree. ..

On the other hand, in the substrate processing device 100 according to the first embodiment, the exhaust speed from the inside of the processing container 1 to the gas exhaust device 4 is the exhaust speed at the time of initial installation of the substrate processing device 100 (hereinafter, "reference exhaust speed"). The rotation speed of the motor of the vacuum pump 42 is controlled so as to be (referred to as).

FIG. 4 is a graph showing an example of the relationship between the flow rate of gas supplied to the processing container 1 due to aging and the pressure inside the processing container 1.

At the time of initial installation of the substrate processing apparatus 100, the output of the vacuum pump 42 is set to a predetermined output, and for each of the plurality of gases (raw material gas, reducing gas, carrier gas (inert gas)) supplied to the processing container 1. The pressure in the processing container 1 when the flow rate is changed is plotted, and the approximate line 71 is obtained. Here, the rotation speed (output) of the vacuum pump 42 at the time of initial installation is set at a rotation speed lower than the maximum rotation speed of the vacuum pump 42. For example, when the maximum rotation speed of the vacuum pump 42 is set to 100%, it is preferably set to 95% or less of the maximum rotation speed, and more preferably 80% or less from the viewpoint of actual operation. .. As the rotation speed of the pump at the reference exhaust speed approaches the maximum rotation speed, the adjustment and control margins become smaller, and stable process performance cannot be satisfied.

Next, the vacuum pump control unit 62 adjusts the rotation speed of the motor of the vacuum pump 42 when the predetermined determination criteria are satisfied. Here, the predetermined determination standard is a standard for determining that the conductance of the exhaust pipe 41 or the like has decreased. For example, when a predetermined operating time has elapsed or the number of cycles exceeds a predetermined threshold value. is there. Further, maintenance or replacement of equipment (exhaust pipe 41, vacuum pump 42, APC valve 43, etc.) that affects the exhaust speed may be performed. Since the pressure control in the processing container 1 may be affected during the film forming process, it is preferable to disallow the adjustment of the rotation speed.

The vacuum pump control unit 62 increases the rotation speed of the motor of the vacuum pump 42 from the rotation speed at the time of initial installation.

Here, the rotation speed of the motor of the vacuum pump 42 is left as it was at the initial installation, and an approximate line 72 showing the relationship between the flow rate of the supplied gas and the pressure in the processing container 1 in the state of reduced conductance (after the lapse of operating time) is shown. .. Due to the decrease in conductance of the exhaust pipe 41 and the like, the inclination of the approximate line 72 becomes larger than the inclination of the approximate line 71 at the time of initial installation, and is diverged.

Further, an approximate line 72a showing the relationship between the flow rate of the supply gas and the pressure in the processing container 1 when the rotation speed of the motor of the vacuum pump 42 is adjusted (increased) in the state of reduced conductance (after the lapse of operating time) is shown. .. By adjusting (increasing) the rotation speed of the motor of the vacuum pump 42 in this way, the inclination of the approximate line 72a can be made closer to the inclination of the approximate line 71 at the time of initial installation. Membrane performance can be obtained.

The adjusted rotation speed shall be the rotation speed at which the reference exhaust speed can be obtained. The vacuum pump control unit 62 adjusts the rotation speed of the motor of the vacuum pump 42 based on the detected value of the pressure sensor 44 and the reference exhaust speed. For example, the vacuum pump control unit 62 acquires the current exhaust speed from the change in the detected value of the pressure sensor 44. The vacuum pump control unit 62 compares the acquired current exhaust speed with the reference exhaust speed, and adjusts the rotation speed of the motor of the vacuum pump 42 based on the comparison result. For example, the vacuum pump control unit 62 adjusts the rotation speed of the motor of the vacuum pump 42 so that the acquired exhaust speed becomes the reference exhaust speed. As a result, as shown in the approximate line 72a of FIG. 4, the relationship between the flow rate of the supply gas and the pressure in the processing container 1 can be made equal to the approximate line 71 at the time of initial installation. As shown, the pressure change in the processing container 1 can be made the same as in the initial installation (see FIG. 2A), and the same film forming performance as in the initial installation can be obtained.

As described above, according to the substrate processing apparatus 100 according to the first embodiment, by controlling the rotation speed of the motor by using the vacuum pump 42 controlled by the inverter, by-products and the like adhere to the exhaust pipe 41 and the like, and conductance is increased. Even if it changes with time, the exhaust speed can be kept constant, and the stability of the substrate processing performance can be improved.

Further, the rotation speed of the vacuum pump 42 at the time of initial installation is set at a rotation speed less than the maximum rotation speed of the vacuum pump 42 (for example, 95% or less, more preferably 80% or less). As a result, even if by-products or the like adhere to the exhaust pipe 41 or the like and the conductance changes with time, the stability of the substrate processing performance can be ensured by increasing the rotation speed of the vacuum pump 42, so that maintenance can be performed. The life of the cycle can be extended. By using the vacuum pump 42 having a large maximum output, the maintenance cycle can be further extended.

Further, since the control device 20 can be used to acquire the exhaust speed at the time of initial installation, acquire the current exhaust speed, and adjust the rotation speed of the motor, human work can be eliminated.

Further, the control device 20 may operate monitoring software that constantly monitors signals that affect the decrease in exhaust speed. The signals that affect the decrease in the exhaust speed are, for example, the pressure sensor of the processing container 1 (not shown), the pressure sensor 44 of the exhaust pipe 41, and the pressure sensor on the primary side of the vacuum pump 42 (not shown). ), The load status of the vacuum pump 42 (for example, the current value and temperature of the motor), the opening degree of the APC valve 43, and the like can be used. As a result, it is possible to detect a sign of a film forming process defect caused by a change in the exhaust speed and prevent the process defect in advance.

<Cluster system>
Next, the cluster system 300 according to the second embodiment will be described with reference to FIG. FIG. 5 is a plan view showing an example of the configuration of the cluster system 300 according to the second embodiment. The cluster system 300 has four substrate processing devices 100A to 100D. These are connected to the four walls of the vacuum transfer chamber 301 having a heptagonal planar shape via a gate valve G, respectively. The inside of the vacuum transfer chamber 301 is exhausted by a vacuum pump and maintained at a predetermined degree of vacuum.

The substrate processing devices 100A to 100D are devices that perform processing (for example, film formation processing) on the substrate W, and are composed of a CVD (Chemical Vapor Deposition) device, an ALD device, and the like. An example of the substrate processing devices 100A to 100D is the substrate processing device 100 shown in FIG. 1, and redundant description will be omitted. The substrate processing devices 100A to 100D perform the same processing on the substrate W, and have the same configuration. However, as will be described later, the structures of the exhaust pipes 41A to 41D are different.

Further, three load lock chambers 302 are connected to the other three wall portions of the vacuum transfer chamber 301 via a gate valve G1. An air transport chamber 303 is provided on the opposite side of the vacuum transport chamber 301 with the load lock chamber 302 in between. The three load lock chambers 302 are connected to the atmospheric transport chamber 303 via a gate valve G2. The load lock chamber 302 controls the pressure between the atmospheric pressure and the vacuum when the substrate W is transported between the atmospheric transport chamber 303 and the vacuum transport chamber 301.

The wall portion of the air transport chamber 303 opposite to the load lock chamber 302 mounting wall portion has three carrier mounting ports 305 for mounting a carrier (FOUP or the like) C for accommodating the substrate W. Further, an alignment chamber 304 for aligning the substrate W is provided on the side wall of the air transport chamber 303. A downflow of clean air is formed in the air transport chamber 303.

A transfer mechanism 306 is provided in the vacuum transfer chamber 301. The transport mechanism 306 transports the substrate W to the substrate processing devices 100A to 100D and the load lock chamber 302. The transport mechanism 306 may have two transport arms 307a, 307b that can move independently.

A transport mechanism 308 is provided in the atmospheric transport chamber 303. The transport mechanism 308 is adapted to transport the substrate W to the carrier C, the load lock chamber 302, and the alignment chamber 304.

The cluster system 300 has an overall control unit 310. The overall control unit 310 includes each component of the substrate processing devices 100A to 100D, an exhaust mechanism and transfer mechanism 306 of the vacuum transfer chamber 301, an exhaust mechanism and gas supply mechanism of the load lock chamber 302, and a transfer mechanism 308 of the atmosphere transfer chamber 303. A main control unit having a CPU (computer) that controls the drive systems of gate valves G, G1, G2, etc., an input device (keyboard, mouse, etc.), an output device (printer, etc.), a display device (display, etc.), a storage device. Has (storage medium). The main control unit of the overall control unit 310 executes a predetermined operation in the cluster system 300 based on, for example, a storage medium built in the storage device or a processing recipe stored in the storage medium set in the storage device. Let me. The overall control unit 310 may be a higher-level control unit of the control unit of each unit such as the control device 6 (see FIG. 1).

Next, the operation of the cluster system 300 configured as described above will be described. The following processing operations are executed based on the processing recipe stored in the storage medium in the overall control unit 310.

First, the overall control unit 310 takes out the substrate W from the carrier C connected to the atmospheric transport chamber 303 by the transport mechanism 308 and transports it to the atmospheric transport chamber 303. The overall control unit 310 opens the gate valve G2 of any of the load lock chambers 302, and carries the substrate W held by the transfer mechanism 308 into the load lock chamber 302. After the transport arm of the transport mechanism 308 is retracted into the atmospheric transport chamber 303, the overall control unit 310 closes the gate valve G2 and evacuates the inside of the load lock chamber 302. After the substrate W is taken out from the carrier C and before being carried into the load lock chamber 302, the substrate W is aligned in the alignment chamber 304.

When the load lock chamber 302 reaches a predetermined degree of vacuum, the overall control unit 310 opens the gate valve G1 of the load lock chamber 302, takes out the substrate W from the load lock chamber 302 by the transfer mechanism 306, and takes out the substrate W from the load lock chamber 302. Transport to. After the transfer arm of the transfer mechanism 306 is retracted into the vacuum transfer chamber 301, the overall control unit 310 closes the gate valve G1.

The overall control unit 310 opens the gate valve G of any of the substrate processing devices 100A, and carries the substrate W held by the transport mechanism 306 into the substrate processing device 100A. After the transfer arm of the transfer mechanism 306 is retracted into the vacuum transfer chamber 301, the overall control unit 310 closes the gate valve G and processes the substrate W by the substrate processing device 100A.

After the processing of the substrate processing device 100A is completed, the overall control unit 310 opens the gate valve G of the substrate processing device 100A, takes out the substrate W from the substrate processing device 100A by the transfer mechanism 306, and transfers the substrate W to the vacuum transfer chamber 301. After the transfer arm of the transfer mechanism 306 is retracted into the vacuum transfer chamber 301, the overall control unit 310 closes the gate valve G of the substrate processing device 100A.

The overall control unit 310 opens the gate valve G1 of any of the load lock chambers 302, and carries the substrate W held by the transport mechanism 306 into the load lock chamber 302. After the transfer arm of the transfer mechanism 306 is retracted into the vacuum transfer chamber 301, the overall control unit 310 closes the gate valve G1 and returns the inside of the load lock chamber 302 to the atmospheric atmosphere.

When the load lock chamber 302 reaches a predetermined atmospheric atmosphere, the overall control unit 310 opens the gate valve G2 of the load lock chamber 302, takes out the substrate W from the load lock chamber 302 by the transport mechanism 308, and takes out the substrate W from the load lock chamber 302 to the atmosphere transport chamber 303. Transport to. After the transport arm of the transport mechanism 308 is retracted into the atmospheric transport chamber 303, the overall control unit 310 closes the gate valve G2 of the load lock chamber 302. Further, the overall control unit 310 returns the substrate W held by the transport mechanism 308 to the carrier C.

As described above, according to the cluster system 300 according to the second embodiment, the substrate W can be processed by the substrate processing devices 100A to 100D.

Next, the cluster system 300 according to the second embodiment will be further described with reference to FIG. FIG. 6 is a schematic diagram showing an example of the configuration of the cluster system 300 according to the second embodiment. In the example shown in FIG. 6, the cluster system 300 includes four substrate processing devices 100A to 100D. The substrate processing devices 100A to 100D have the same configuration as the substrate processing device 100 shown in FIG. However, in the substrate processing devices 100A to 100D, the length and shape of the exhaust pipes 41A to 41D are different.

For example, in a semiconductor mass production factory, a plurality of substrate processing devices 100A to 100D having the same specifications for the same semiconductor process are installed. On the other hand, it is required to install a plurality of substrate processing devices 100A to 100D in a space-saving and small footprint as much as possible. Therefore, even if the substrate processing devices 100A to 100D have the same process and specifications, it is realistic to completely unify the lengths and bends of the exhaust pipes 41A to 41D from the processing container 1 to the vacuum pump 42. Have difficulty. Therefore, structural differences occur in the substrate processing devices 100A to 100D.

The conductance differs due to the difference in length and bending of the exhaust pipes 41A to 41D. FIG. 7 is a graph showing an example of the relationship between the flow rate of the gas supplied to the processing container 1 and the pressure in the processing container 1 due to a difference in the substrate processing devices 100A to 100D. Further, the approximate line 81 shows the relationship in the substrate processing device 100A, the approximate line 82 shows the relationship in the substrate processing device 100B, the approximate line 83 shows the relationship in the substrate processing device 100C, and the approximate line 84 shows the relationship in the substrate processing device 100D. Show the relationship. Further, the approximate lines 82a to 84a show the relationship in the case where the rotation speed is adjusted.

Here, the substrate processing device 100A will be described as a reference device. Even if the rotation speed of the vacuum pump 42, the opening degree of the APC valve 43, and the opening / closing of the valves V1 to V4 are controlled in the substrate processing devices 100B to 100D under the same conditions as the substrate processing device 100A, as shown in the approximate lines 81 to 84. Since the exhaust speeds are different, the same film forming performance as that of the substrate processing apparatus 100A may not be obtained.

On the other hand, in the cluster system 300 according to the second embodiment, the rotation speed of the motor is individually set according to the structural difference between the substrate processing devices 100A to 100D. First, the vacuum pump control unit 62 of the substrate processing device 100A, which is a reference device, acquires the exhaust speed of the substrate processing device 100A (hereinafter, referred to as “reference exhaust speed”) in advance. The acquired reference exhaust speed is input to the control device 6 of the substrate processing devices 100B to 100D. The input method is not limited, and for example, it may be performed by communication by the network N connecting the control devices 6 to each other, or may be performed via a recording medium, and the input may be performed by the operator. You may be broken.

Next, the vacuum pump control unit 62 of the substrate processing device 100B adjusts the rotation speed of the motor of the vacuum pump 42 of the substrate processing device 100B. The adjusted rotation speed shall be the rotation speed at which the reference exhaust speed can be obtained. As a result, as shown in the approximate line 82a of FIG. 7, the exhaust speed of the substrate processing device 100B can be made equal to the reference exhaust rate (approximate line 81), so that the pressure change in the processing container 1 can be changed to the substrate processing device 100A. The same can be applied to the above, and the same film forming performance as that of the substrate processing apparatus 100A can be obtained. Similarly, in the substrate processing apparatus 100C, the rotation speed of the motor of the vacuum pump 42 of the substrate processing apparatus 100C is adjusted.

As described above, according to the cluster system 300 according to the second embodiment, even if there is a structural difference in the exhaust pipes 41A to 41D by controlling the rotation speed of the motor by using the vacuum pump 42 controlled by the inverter. The exhaust speed can be made constant, and the stability of the substrate processing performance can be improved. Therefore, in the substrate processing devices 100A to 100D of the same process and the same specifications, the machine difference can be eliminated and the same film forming performance can be obtained.

In other words, since the length of the exhaust pipes 41A to 41D and the degree of freedom of bending are increased, the substrate processing devices 100A to 100D can be installed in a space-saving and small footprint.

Although the case of eliminating the difference between the exhaust pipes 41A to 41D for the plurality of substrate processing devices 100 in one cluster system 300 has been described as an example, the present invention is not limited to this. The substrate processing apparatus 100 between the plurality of cluster systems 300 may be controlled in the same manner.

Further, at the time of initial installation of the cluster system 300, after optimizing the conductance of the entire cluster system 300 by adopting the control shown in the second embodiment, each substrate processing apparatus 100 is subjected to the control shown in the first embodiment. The conductance may be optimized. As a result, it is possible to eliminate the machine difference between the substrate processing devices 100A to 100D and to keep the exhaust speed constant even when the conductance changes with time.

Further, in each of the substrate processing devices 100A to 100D, after optimizing the conductance in each of the substrate processing devices 100A to 100D by the control shown in the first embodiment, the control shown in the second embodiment is adopted to adopt the cluster system 300. The overall conductance may be optimized.

For example, the control device 6 of the substrate processing device 100A has a vacuum of the substrate processing device 100A so that the exhaust speed from the inside of the processing container 1 of the substrate processing device 100A to the gas exhaust device 4 of the substrate processing device 100A becomes the first exhaust speed. The rotation speed of the motor of the pump 42 is adjusted. Further, the control device 6 of the substrate processing device 100B vacuums the substrate processing device 100B so that the exhaust speed from the inside of the processing container 1 of the substrate processing device 100B to the gas exhaust device 4 of the substrate processing device 100B becomes the second exhaust speed. The rotation speed of the motor of the pump 42 is adjusted. The overall control unit 310 determines the third exhaust speed based on the first exhaust speed and the second exhaust speed. For example, the overall control unit 310 compares the first exhaust speed with the second exhaust speed, and determines the third exhaust speed based on the comparison result.

The control device 6 of the board processing device 100A adjusts the exhaust speed of the board processing device 100A based on the third exhaust speed. The control device 6 of the board processing device 100A adjusts the rotation speed of the motor of the vacuum pump 42 of the board processing device 100A so as to have the adjusted exhaust speed. Further, the control device 6 of the substrate processing device 100B adjusts the exhaust speed of the substrate processing device 100B based on the third exhaust speed. The control device 6 of the board processing device 100B adjusts the rotation speed of the motor of the vacuum pump 42 of the board processing device 100B so as to have the adjusted exhaust speed.

Further, in the cluster system 300 according to the second embodiment, the control shown in the first embodiment described above is carried out in each of the substrate processing devices 100A to 100D to obtain the initial reference exhaust speed of each of the substrate processing devices 100A to 100D. After that, the initial reference exhaust speeds of the substrate processing devices 100A to 100D may be compared, and the reference exhaust speed of the cluster system 300 may be obtained based on the comparison result.

Further, although the substrate processing apparatus 100 has been described as being a single-wafer type apparatus, the present invention is not limited to this, and a batch type apparatus may be used.

FIG. 8 is a schematic cross-sectional view showing an example of the configuration of the substrate processing apparatus 500 according to the third embodiment.

The substrate processing apparatus 500 has a vertically long shape extending in the vertical direction as a whole. The substrate processing apparatus 500 has a processing container 510 which is vertically long and extends in the vertical direction.

The processing container 510 is formed of, for example, quartz. The processing container 510 has, for example, a double tube structure of a cylindrical inner tube 511 and a ceilinged outer tube 512 placed concentrically on the outside of the inner tube 511. The lower end of the processing container 510 is hermetically held by, for example, a stainless steel manifold 520.

The manifold 520 is fixed to, for example, a base plate (not shown). The manifold 520 has an injector 530 and a gas exhaust unit 540.

The injector 530 is a gas supply unit that introduces various gases into the processing container 510.

A pipe 531 for introducing various gases is connected to the injector 530. The pipe 531 is provided with a flow rate adjusting unit (not shown), a valve (not shown), or the like such as a mass flow controller for adjusting the gas flow rate. The number of injectors 530 may be one, or may be a plurality of injectors. Note that FIG. 1 shows a case where the number of injectors 530 is one.

The gas exhaust unit 540 exhausts the inside of the processing container 510. An exhaust pipe 541 is connected to the gas exhaust unit 540. The exhaust pipe 541 is provided with an opening variable valve 543, a vacuum pump 542, and the like that can control the pressure reduction in the processing container 510.

A furnace port 521 is formed at the lower end of the manifold 520. The hearth 521 is provided with, for example, a stainless steel disk-shaped lid 550.

The lid 550 is provided so as to be able to move up and down by an elevating mechanism 551, and is configured so that the furnace port 521 can be hermetically sealed. For example, a quartz heat insulating cylinder 60 is installed on the lid 550.

On the heat insulating cylinder 60, for example, a wafer boat 570 made of quartz, which holds a large number of wafers W in a horizontal state at predetermined intervals in multiple stages, is placed.

The wafer boat 570 is carried into the processing container 510 by raising the lid 550 using the elevating mechanism 551, and is housed in the processing container 510. Further, the wafer boat 570 is carried out from the processing container 510 by lowering the lid 550. The wafer boat 570 has a groove structure having a plurality of slots (support grooves) in the longitudinal direction, and the wafers W are loaded in the slots at vertical intervals in a horizontal state. A plurality of wafers mounted on the wafer boat 570 form one batch, and various heat treatments are performed in batch units.

A heater 580 is provided on the outside of the processing container 510. The heater 580 has, for example, a cylindrical shape and heats the processing container 510 to a predetermined temperature.

The substrate processing device 500 is provided with, for example, a control device 590 made of a computer.

Similarly to the single-wafer type substrate processing apparatus 100 shown in FIG. 1, the batch type substrate processing apparatus 500 shown in FIG. 8 also exhausts by controlling the rotation speed of the motor using an inverter-controlled vacuum pump 542. Even if by-products or the like adhere to the pipe 541 or the like and the conductance changes with time, the exhaust speed can be kept constant, the maintenance cycle can be further extended, and the stability of the substrate processing performance can be improved. ..

Further, even in a system having a plurality of batch type substrate processing devices 500, a motor using an inverter-controlled vacuum pump 542 is used as in the cluster system 300 having a plurality of single-wafer type substrate processing devices 100 shown in FIG. By controlling the rotation speed of the above, the exhaust speed can be kept constant and the stability of the substrate processing performance can be improved even if there is a structural difference in the exhaust pipe 541.

Although the embodiments of the substrate processing devices 100, 500 and the cluster system 300 have been described above, the present disclosure is not limited to the above embodiments and the like, and the scope of the gist of the present disclosure described in the claims. Within, various modifications and improvements are possible.

Although the case where the substrate processing apparatus 100 is an ALD apparatus has been described as an example, the substrate processing apparatus 100 is not limited to this, and may be an ALE (Atomic Layer Etching) apparatus, and is a substrate processing apparatus that performs other cycle processes. You may. Further, the substrate processing apparatus 100 may include a heater in the processing container 1 and the substrate mounting table 2. Further, the substrate processing device 100 may be a plasma processing device that performs processing by plasma. Further, the gas exhaust device 4 may be provided with a trap on the upstream side of the vacuum pump 42 in order to prevent by-products and the like from being sucked into the vacuum pump 42. Further, although the processing gas supply unit 5 has been described as having a supply line for supplying four systems of gas, the present invention is not limited to this, and the number of systems may be three or less, or five or more. ..

Further, the treatment in the substrate processing apparatus 100 has been described as an example of a treatment of forming a TiN film with TiCl ₄ gas and NH ₃ gas, but the treatment is not limited to this, and for example, SiH ₂ Cl ₂ gas and NH ₃ A process for forming a Si ₂ N ₃ film (SiN film) with gas or a film formation by other ALD methods (for example, W film, Mo film, Al ₂ O ₃ film, ZAZ film, PoLy-Si film, SiGe film). , Graphene, etc.) or an oxidation (diffusion) process. Further, the present invention is not limited to ALD, and may be CVD, plasma (including microwave) CVD, plasma ALD, or the like.

Further, the substrate processing device 100 may be provided with a ballast gas supply device (not shown) for supplying the ballast gas. As the ballast gas, an inert gas such as N ₂ gas can be used.

The ballast gas supply device has a ballast gas supply line. The ballast gas supply line extends from the ballast gas supply source, which is the ballast gas supply source, and is connected to the exhaust pipe 41. The ballast gas supply line is provided with a mass flow controller and a valve in order from the ballast gas supply source side. The mass flow controller controls the flow rate of ballast gas flowing through the ballast gas supply line. The valve switches between supplying and stopping ballast gas. By supplying the ballast gas to the exhaust pipe 41, the amount of exhaust gas from the inside of the processing container 1 to the gas exhaust device 4 can be rapidly reduced. Further, by stopping the supply of the ballast gas, the amount of exhaust gas from the processing container 1 to the gas exhaust device 4 can be quickly returned to the state before the ballast gas supply.

The ballast gas supply line of the ballast gas supply device has been described as being connected to the exhaust pipe 41 on the upstream side of the APC valve, but the present invention is not limited to this. For example, the ballast gas supply line of the ballast gas supply device may be connected to the processing container 1 and supply the ballast gas into the processing container 1.

Note that this application claims priority based on Japanese Patent Application No. 2019-078857 filed on April 17, 2019, and the entire contents of these Japanese patent applications are incorporated herein by reference.

1,510 Processing container (chamber)
2 Board mount 3 Shower head 4 Gas exhaust device 5 Processing gas supply unit 6 Control device 20 Control device 21 Heater 41, 41A to 41D Exhaust piping 42 Vacuum pump 43 APC valve 44 Pressure sensor 100, 100A to 100D, 500 Board processing device 300 Cluster system 540 Gas exhaust section 541 Exhaust piping 542 Vacuum pump 543 Opening variable valve 580 Heater 590 Control device

Claims (13)

1. With the chamber
   A gas exhaust device that has a pump with controllable rotation speed and exhausts gas from the chamber,
   Equipped with a control device,
   The control device adjusts the rotation speed of the pump so that the exhaust speed from the inside of the chamber to the gas exhaust device becomes the reference exhaust speed.
   Board processing equipment.
2. The reference exhaust rate is the exhaust rate at the time of initial installation of the substrate processing apparatus.
   The substrate processing apparatus according to claim 1.
3. Equipped with a detector to detect signals related to exhaust speed
   The control device monitors the detection value of the detector.
   The substrate processing apparatus according to claim 1 or 2.
4. The control device adjusts the rotation speed of the pump based on the detection result of the detector and the reference exhaust speed.
   The substrate processing apparatus according to claim 3.
5. The rotation speed of the pump at the reference exhaust speed is smaller than the maximum rotation speed.
   The substrate processing apparatus according to any one of claims 1 to 4.
6. A plurality of substrate processing devices including a chamber, a gas exhaust device having a pump capable of controlling the rotation speed and exhausting gas from the chamber, and a control device are provided.
   The exhaust speed in the above-mentioned substrate processing device is set as the reference exhaust speed.
   The control device of the other substrate processing device adjusts the rotation speed of the pump so that the exhaust speed from the inside of the chamber to the gas exhaust device becomes the reference exhaust speed.
   Board processing system.
7. The reference exhaust rate is the exhaust rate at the time of initial installation of one of the substrate processing devices.
   The substrate processing system according to claim 6.
8. The plurality of substrate processing devices include detectors that detect signals related to exhaust speed.
   The control device monitors the detection value of the detector.
   The substrate processing system according to claim 7.
9. The control device of the substrate processing apparatus is based on the detection result of the detector of the substrate processing apparatus and the reference exhaust speed of the substrate processing apparatus of the substrate processing apparatus. Adjust the rotation speed of
   The substrate processing system according to claim 8.
10. With the chamber
    A gas exhaust device that has a pump with controllable rotation speed and exhausts gas from the chamber,
    A substrate processing method for a substrate processing apparatus including a control device.
    The control device is
    The rotation speed of the pump is adjusted so that the exhaust speed from the inside of the chamber to the gas exhaust device becomes the reference exhaust speed.
    Substrate processing method.
11. The reference exhaust rate is the exhaust rate at the time of initial installation of the substrate processing apparatus.
    The substrate processing method according to claim 10.
12. The reference exhaust speed is
    The exhaust speed at the time of initial installation of another substrate processing device having a chamber, a pump having a controllable rotation speed, and a gas exhaust device for exhausting gas from the chamber, and a control device.
    The substrate processing method according to claim 10.
13. With the chamber
    A gas exhaust device that has a pump with controllable rotation speed and exhausts gas from the chamber,
    A substrate processing method for a substrate processing system including a control device and a plurality of substrate processing devices.
    The control device is
    The rotation speed of the pump of the substrate processing device is adjusted so that the exhaust speed from the chamber of the substrate processing device to the gas exhaust device becomes the first reference exhaust rate.
    The rotation speed of the pump of the other substrate processing device is adjusted so that the exhaust rate from the chamber of the other substrate processing device to the gas exhaust device becomes the second reference exhaust rate.
    The third reference exhaust rate is determined based on the first reference exhaust rate of one of the substrate processing devices and the second reference exhaust rate of the other substrate processing device, and based on the third reference exhaust rate. Adjusting the exhaust rate of one of the substrate processing devices and the exhaust rate of the other substrate processing device.
    Substrate processing method.

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