CN108109940A - Substrate processing device and substrate handling system - Google Patents
Substrate processing device and substrate handling system Download PDFInfo
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- CN108109940A CN108109940A CN201711188858.5A CN201711188858A CN108109940A CN 108109940 A CN108109940 A CN 108109940A CN 201711188858 A CN201711188858 A CN 201711188858A CN 108109940 A CN108109940 A CN 108109940A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention need not use the power supply unit of low capacity for a long time when changing design temperature, and the heated object of the mounting table of mounting substrate etc. is made to be warming up to the design temperature after change.The substrate processing device handled substrate of the present invention includes：PM400a~d has the heating part heated to the heated object for loading the mounting table of substrate etc.；With controller 300a~d, it is with temperature control part, the driving power of heating part is limited to below allowance power and heating part is controlled to adjust the temperature of heated object to design temperature by above-mentioned temperature control part, temperature control part, which has, makes driving power become the limitation function below the limitation power lower than allowance power, in the case where the design temperature of heated object changes, in the step of design temperature that heated object is warming up to after change, above-mentioned limitation function is effective, the situation that wherein above-mentioned design temperature changes is including during the startup of substrate processing device.
Description
Technical field
The present invention relates to the substrate processing devices and substrate that the substrate to semiconductor wafer etc. carries out the processing such as film process
Processing system.
Background technology
In the manufacturing process of semiconductor manufacturing apparatus, film process or etching are repeated to the substrate of semiconductor wafer
The various processing such as processing.In recent years, multiple substrate processing devices handled in the manner described above substrate are set, form substrate
Processing system (referring to patent document 1).
In the substrate handling system of patent document 1, the multiple processing performed in multiple substrate processing devices are stored with
Each processing row when the processing maximum power value that consumes.Then, in the system of the patent document 1, according to processing requirement, calculate
With in each substrate processing device processing in execution it is corresponding processing maximum power value aggregate value and with require processing pair
The aggregate value for the processing maximum power value answered when within the maximum power value that only aggregate value can use in system entirety, is held
Row requirement is handled.
As a result, in substrate system in patent document 1, the processing that performs parallel can not be reduced, and capacity is utilized
Small power supply unit processing substrate.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2007-273888 publications
The content of the invention
The technical problem that the invention wants to solve
In substrate handling system, setting when each substrate processing device starts for loading the mounting table of substrate etc.
It during design temperature, is switched to existing processing compared to during the high processing of design temperature of mounting table, into being about to mounting table progress
The step of design temperature being warming up to after change (hereinafter referred to as heating step).In the step of being performed in substrate processing device,
The heating step most consumes power.
Therefore, it is necessary to prepare to have when performing heating step parallel in existing system, in all substrate processing devices
There is the power supply unit of the allowance power more than performance number of consumption forecast maximum or carried out in order with each substrate processing device
Heating step.
For the heating step, by using the technology of patent document 1, the heating step that performs parallel can not be reduced
Quantity, and heated up using the small power supply unit of capacity to mounting table.
But using patent document 1 technology when, due to being impermissible for the execution of heating step, for all Substrate treatments
Device, until heating step completion needs the long period.
Additionally, it is preferred that further make power supply unit low capacity.
The present invention has been made in view of the above-described circumstances, and it is an object of the present invention to provide the base of substrate handling system and the realization system
Piece treating apparatus when the design temperature that above-mentioned substrate handling system can be when starting including device changes, is used without growing
The heated object of mounting table etc. is warming up to the design temperature after change by the power supply unit of the low capacity of time.
For solving the technical solution of technical problem
In order to achieve the above objectives, the present invention provides a kind of substrate processing device handled substrate, and feature exists
In, including：Heating part is heated to including loading the heated object of mounting table of substrate；And temperature control part, one side
The driving power of the heating part is limited to below allowance power, while controlling the heating part by the temperature tune of above-mentioned heated object
It is whole to design temperature, above-mentioned temperature control part have make above-mentioned driving power become the limitation power lower than above-mentioned allowance power with
Under limitation function, be warming up to change in the case where the design temperature of above-mentioned heated object changes, by above-mentioned heated object
In the step of rear above-mentioned design temperature, make above-mentioned limitation function effective, wherein, the situation that above-mentioned design temperature changes includes
Including during the startup of substrate processing device.
According to the present invention, the heated object of the design temperature in the change of the design temperature of heated object, to after changing
Heating step when, temporarily driving power can be limited and be permitted below the low limitation power of power as specific volume.Therefore, it is possible to small
Capacity power supply unit.
The above-mentioned design temperature after changing is warming up in the case where above-mentioned design temperature changes, by above-mentioned heated object
The step of in, can decide whether to make the limitation function effective by each heated object.
Another aspect of the present invention provides a kind of substrate handling system, it is characterised in that：With it is multiple to substrate at
The substrate processing device of reason, above-mentioned substrate processing device include：Heating part, to including loading being heated for the mounting table of substrate
Body is heated；And temperature control part, while the driving power of the heating part is limited to below allowance power, while control should
Heating part adjusts the temperature of above-mentioned heated object to design temperature, and above-mentioned substrate handling system, which has, controls above-mentioned multiple substrates
The control device of processing unit, the above-mentioned temperature control part of above-mentioned substrate processing device, which has, makes above-mentioned driving power become than upper
The limitation function below the low limitation power of allowance power is stated, above-mentioned control device, which has, to be judged whether to have above-mentioned limitation function
The judging part of effect, at least meet to perform the step of for above-mentioned heated object design temperature change in the case of, will be upper
During this condition of the step of stating the above-mentioned design temperature after heated object is warming up to change, above-mentioned judging part is judged as in above-mentioned step
Make above-mentioned limitation function effective in rapid, wherein, when the situation that above-mentioned design temperature changes includes the startup of substrate processing device
Inside.
It is preferred that also meet in addition to the aforementioned conditions the substrate handling system on the current item using power
During part, above-mentioned judging part is judged as making above-mentioned limitation function effective.
Information of the above-mentioned judging part based on above-mentioned multiple respective current states of substrate processing device estimates above-mentioned current
Use power, it is above-mentioned on the current condition using power be the maximum power allowed of the substrate handling system with
Above-mentioned current difference this condition smaller than specified value using power measured.
Can have and measure above-mentioned current use power measurement device, it is above-mentioned to be using the condition of power on current
Maximum power that the substrate handling system is allowed and the measured above-mentioned current difference using power it is smaller than specified value this
Condition.
Another aspect of the present invention provides a kind of processing method for substrate of substrate handling system, it is characterised in that：Above-mentioned base
Piece processing system has multiple substrate processing devices handled substrate, and above-mentioned substrate processing device includes：Heating part,
The heated object of mounting table to including loading substrate heats；And temperature control part, one side is by the driving of the heating part
Power limit is below allowance power, while control the heating part and adjust the temperature of above-mentioned heated object to design temperature,
Above-mentioned substrate handling system has a control device for controlling above-mentioned multiple substrate processing devices, above-mentioned substrate processing device it is above-mentioned
Temperature control part, which has, makes above-mentioned driving power become the limitation function below the limitation power lower than above-mentioned allowance power, above-mentioned
Control device, which has, to be judged whether to make the effective judging part of above-mentioned limitation function, is above-mentioned quilt the step of at least satisfaction will perform
The design temperature of calandria change in the case of, by above-mentioned heated object be warming up to change after above-mentioned design temperature the step of
During this condition, it is judged as making above-mentioned limitation function effective by above-mentioned judging part, wherein, the situation that above-mentioned design temperature changes
Including during the startup of substrate processing device,
Above-mentioned substrate processing device is while the driving power of above-mentioned heating part is restricted to below above-mentioned limitation power, on one side
The step of carrying out being judged as that above-mentioned limitation function is made effectively to be heated up.
Invention effect
In accordance with the invention it is possible to substrate handling system is provided and realizes the substrate processing device of the system, at above-mentioned substrate
When design temperature of the reason system in the startup including device changes, for a long time, and the power supply unit of low capacity need not be used,
The design temperature that the heated objects such as the mounting table of mounting substrate is made to be warming up to after change.
Description of the drawings
Fig. 1 is the skeleton diagram of the composition of the substrate handling system in the first embodiment for represent the present invention.
Fig. 2 is the hardware structure diagram of the master controller of Fig. 1.
Fig. 3 is the hardware structure diagram of the substrate handling system of Fig. 1.
Fig. 4 is the longitudinal section of the processing module of Fig. 1.
Fig. 5 is the functional block diagram of the processing module of Fig. 1, controller and master controller.
Fig. 6 is for the figure of the limitation function of the temperature control part of definition graph 5.
Fig. 7 is whens representing to require execution processing etc., in the stream of an example of the processing that controller and master controller carry out
Cheng Tu.
Fig. 8 is for illustrating the functional block diagram of the substrate handling system in third embodiment of the present invention.
Fig. 9 is for illustrating the functional block diagram of the substrate handling system in the 4th embodiment of the present invention.
Reference sign
10 substrate handling systems
100 hosts
200 master controllers (EC)
205ROM
210RAM
215CPU
220 buses
225 internal interfaces
230 external interfaces
250 storage parts
255 input units
260 judging parts
260a calculating parts
265 Substrate treatment enforcement divisions
270 communication units
275 output sections
300a~d controllers
350 temperature control parts
355 storage parts
400a~d processing modules (PM)
440a~d mounting tables
451 heating parts
451a mounting table heaters
451b block heaters
452 power supplies
452a power supply units
452b power supply units
800 measurement devices.
Specific embodiment
Hereinafter, referring to the drawings, embodiments of the present invention will be described.In addition, in the present description and drawings, for
The inscape substantially formed with identical function, is marked with same reference numerals, thus omits the repeated explanation.In addition,
The invention is not restricted to embodiments as shown below.
In addition, in the following description, enumerate the semiconductor wafer (being below chip) as substrate formed Ti films (or
TiN film) processing exemplified by illustrate.
(first embodiment)
Fig. 1 is the skeleton diagram of the composition of the substrate handling system in the first embodiment for represent the present invention.
Substrate handling system 10 includes host 100, master controller (hereinafter referred to as EC200 (EC (Equipment
Controller))), 4 controller 300a~d and 4 processing module (hereinafter referred to as PM (Process Module)) 400a
~d.Host 100 and EC200 are connected by the networks such as internet 500.In addition, EC200 and controller 300a~d, passes through LAN
Networks 600 such as (Local AreaNetwork) connect.
Host 100 is whole to substrate handling system 10 to carry out the management such as data management.EC200 is " control in the present invention
One example of device ", and carry out following management：Preserve the scheme for controlling the film process of substrate and using (place
Reason scheme), while the instruction of control film process is sent to controller 300a~d according to scheme, while preserving the side used
The history of case.
Controller 300a~d controls PM400a~d based on the instruction sent from EC200 respectively, each PM400a~d pairs
Film process are carried out based on the wafer W that the control is moved into.Handle data (such as temperature, pressure and gas flow etc. through time-varying
Change), it is sent from controller 300a~d by EC200 to host 100.
By each PM400a~d and each controller 300a~d corresponding with each PM400a~d, " the substrate in the present invention is formed
Processing unit ".
Fig. 2 is the hardware structure diagram of EC200.In addition, the hardware of host 100 and controller 300a~d form and it is not shown,
But similarly to be formed with EC200.
As shown in the figure, EC200 includes ROM (Read Only Memory) 205, RAM (Random Access Memory)
210th, CPU (Central Processing Uint) 215, bus 220, internal interface (I/F) 225 and exterior I/F230.
Program, processing scheme started when ROM205 records have basic program, exception in EC200 execution etc..
RAM210 accumulates various programs and data.ROM205 and RAM210 is an example of storage device, can be EEPROM, light
The storage device of disk, magneto-optic disk etc..
CPU215 controls the film process of substrate according to processing scheme.Bus 220 be ROM205, RAM210, CPU215,
The access of information is exchanged between internal interface 225 and each device of external interface 230.
Internal interface 225 is by the operation of operator, related to film process from keyboard 710 or the output of touch tablet 715
Data, necessary data are exported to monitor 720 or loud speaker 725.External interface 230 is with the master that is connected with network 500
Machine 100 carries out sending and receiving for data, and each controller 300a~d with being connected with network 600 carries out the reception of data
And transmission.
Fig. 3 is for illustrating the hardware structure diagram of the hardware of PM400a is formed substrate handling system 10.
As shown in the figure, substrate handling system 10 have by the conveyer H of wafer W carrying-in/carrying-out and to wafer W carry out into
The processing system S of film process.Conveyer H and processing system S is linked by load locking room 401a, 401b.
Conveyer H has box mounting table 410 and conveyance mounting table 420.Box container 411 is placed in box mounting table 410.
Box container 411 for example can accommodate to multilayer most 25 wafer Ws.
Conveyer 420 is provided with the wafer transfer mechanism 421 of conveyance wafer W.Wafer transfer mechanism 421 has crystalline substance
2 carrying arms 421a, 421b that piece W is substantially horizontally kept, by any one of above-mentioned carrying arm 421a, 421b, while protecting
Wafer W is held, while conveyance wafer W.
Processing system S is provided with transferring chamber 430 and 4 PM400a~d.Transferring chamber 430 has such as shape seen from above
As the closed construction of generally polygonal (being hexagon in example illustrated).In addition, transferring chamber 430 is by can be airtightly
Closed gate valve is connected respectively with PM400a~d.Then, the wafer transfer mechanism of conveyance wafer W is provided in transferring chamber 430
431.Wafer transfer mechanism 431 has 2 carrying arms 431a, 431b for substantially horizontally keeping wafer W, passes through above-mentioned conveyance
Any one of arm 431a, 431b, while wafer W is kept, while conveyance wafer W.
Mounting table 440a~d of mounting wafer W is respectively arranged in PM400a~d.
The interior of transferring chamber 430 and PM400a~d are evacuated to desired degree respectively.
According to the above configuration, processing system S using arm 431a by wafer W from load locking room 401a, 401b via transfer
Room 430 is moved into each PM400a~d, is being placed in the state of each mounting table 440a~d after progress film process, again, warp
It is taken out of by transferring chamber 430 from load locking room 401a, 401b.
In addition, in present embodiment, wafer W is moved to PM400a or PM400c to carry out the film process of Ti films, it
Afterwards, PM400b or PM400d is moved to, nitrogenizes to form the processing of TiN film into Ti films are about to.In addition, PM400a~d can be
It carries out the device of film process as described above or to be formed the device of the film of other species.
Fig. 4 is the respective longitudinal sections of PM400a~d.
PM400a~d has the substantially cylindric cavity C airtightly formed, is provided with carries in the manner described above inside it
Put mounting table 440a~d of wafer W.Mounting table 440a~d is formed such as by the ceramics AlN, by cylindric supporting member
450 supportings.
Mounting table heater 451a is embedded in mounting table 440a~d.In mounting table heater 451a, in the outer of cavity C
Portion is connected with power supply unit 452a, and using the alternating voltage exported from power supply 452a, driving mounting table heater 451a makes
It generates heat, and the temperature of mounting table 440a~d is heated to the design temperature defined in processing scheme and holding.
In addition, it is provided with block heater (ginseng in cavity C, from cavity C to the exhaust lay out of aftermentioned exhaust apparatus 480
According to the reference numeral 451b of Fig. 5), block heater is with other power supply units outside power supply unit 452a (with reference to the attached drawing of Fig. 5
Mark 452b) connection.Top wall portion is for example arranged at compared with the block heater of cavity C.By the block heater, by cavity
The top wall portion of C or above-mentioned exhaust lay out are heated to design temperature and keep.
Although in addition, illustration omitted, in order to which the heated objects such as mounting table 440a~d are heated to design temperature and are protected
It holds, the temperature sensor for measuring the thermocouple of the temperature of heated object etc. is arranged at mounting table 440a~d, top wall portion etc..
Insulating element 453 is provided with nozzle 460 in the top wall portion of cavity C.The nozzle 460 by upper block 461, in
Portion's block 462 and lower block 463 are formed.
Gas passage 461a and gas passage 461b are formed in upper block 461.At middle part, block 462 is formed with and gas
The gas passage 462a of the body access 461a connections and gas passage 462b connected with gas passage 461b.In lower block 463
Alternately form multiple spray-hole 463a being respectively communicated with gas passage 462a and gas passage 462b and spray-hole 463b.
Nozzle 460 is connected via gas line 464a, 464b and gas supply mechanism 470.
Gas supply mechanism 470 is made of gas supply source 471a~e, multiple valves 472 and multiple master controllers 473, is led to
The opening and closing for controlling each valve 472 is crossed, is selectively supplied from gas supply source by processing gas into cavity C.In addition, each main control
The flow for the processing gas that device 473 is respectively automatically supplied by control, processing gas is adjusted to desired concentration.
In gas supply source, ClF3Gas supply source 471a supplies the ClF as purge gas3Gas, TiCl4Gas
Supply source 471b supplies are in order to form Ti films and TiCl containing Ti4Gas, Ar gas supply sources 471c supplies are as excitation etc.
The Ar gases of plasma gas.In addition, H2Supply source 471d supply reducing gas H2, NH3Gas supply source 471e is supplied for nitrogen
Change Ti films and the NH containing N3Gas.
ClF3Gas supply source 471a, TiCl4Gas supply source 471b and Ar gas supply source 471c and above-mentioned gas line
Road 464a connections.H2Supply source 471d and NH3The 471e connection above-mentioned gas circuit 464b connections of gas supply source.Then, TiCl4
Gas supply source 471b although illustration omitted, connects via other gas lines connection exhaust apparatus 480 outside above-mentioned
It connects.
Nozzle 460 is connected with high frequency electric source 491 by adapter 490.On the other hand, it is embedded in mounting table 440a~d
The electrode 492 of opposite electrode as nozzle 460.Electrode 492 is connected with high frequency electric source 494 by adapter 493, by from height
Frequency power 494 generates bias voltage to 492 supply high frequency power supply of electrode.
In cavity C, its bottom wall is provided with exhaust pipe 481, exhaust pipe 481 and the exhaust apparatus for including vacuum pump
480 connections.Exhaust apparatus 480 is exhausted the gas in cavity C using exhaust pipe 481, will be depressurized to as a result, in cavity C
Defined vacuum degree.
According to the above configuration, by the high frequency power supplied from high frequency electric source 491 to nozzle 460, machine will be supplied from gas
The processing gas that structure 470 is supplied to cavity C via nozzle 460 is plasmarized, is formed a film using the plasma to wafer W
Processing.For example, when PM400a forms Ti films, after wafer W is transported, from TiCl4The TiCl of gas supply source 471b supplies4Gas
Body is delivered by Ar gases, is sprayed by gas line 464a, gas passage 461a, 462a from spray-hole 463a into cavity C.Separately
On the one hand, from H2The H of supply source 471d supplies2Gas, by gas line 464b, gas passage 461b, 462b from spray-hole
463b is sprayed into cavity C.Thus, TiCl4Gas and H2Gas is completely independent supplied into cavity C, is being supplied to sky
It is plasmarized by high frequency power on one side that mixing is carried out after in chamber C, as a result, in wafer W formation Ti films (TiSi2Film).
The wafer W of Ti films is formed in the manner described above, then according to needing to be transported to PM400b, is carried out to its surface
The processing nitrogenized.At this point, Ar gases by gas line 464a, gas passage 461a, 462a from multiple spray-hole 463a
It is sprayed into cavity C, NH3Gas and H2Gas is by gas line 464b, gas passage 461b, 462b from multiple spray-holes
463b is sprayed into cavity C.The gas of supply is plasmarized by high frequency power, and wafer W is carried out nitrogen treatment (TiN as a result,
Film formation is handled).In addition, after forming a film to the wafer W of regulation number, by supplying ClF into cavity C3Gas, to cavity
It is purged in C.
Fig. 5 is the function constitution map for representing each function of PM400a~d, controller 300a~d and EC200 in block.
In addition, illustrate only the major part of present embodiment.
PM400a~d has the function of as shown in each piece of heating part 451 and power supply 452.Heating part 451 is by crystalline substance
The heated objects such as piece, cavity are heated to design temperature and the part kept, by mounting table heater 451a, block heater 451b
Deng heating arrangements form.Power supply 452 is the part that power is supplied to heating part 451, from being supplied to mounting table heater 451a
The power supply unit 452a of electricity, the compositions such as power supply unit 452b powered to block heater 451b.
Controller 300a~d has the function of as shown in each piece of temperature control part 350 and storage part 355.Temperature controls
Portion 350 controls the heating part 451 of PM400a~d, and the heated objects such as mounting table are adjusted to design temperature.Specifically, temperature
Control unit 350 obtains the temperature information of heated object, and base from the temperature sensor (not shown) for the temperature for measuring heated object
It is defeated with 451 corresponding power supply 452 of heating part by controlling in the temperature information of the heated object and the information of design temperature
Go out, heated object is adjusted to design temperature.
In addition, when heated object is adjusted to design temperature, 350 one side of temperature control part is by the heating to PM400a~d
The power limit that portion 451 supplies is below preset allowance power, while control heating part 451.Specifically, temperature control
The driving current of heating part 451 and driving voltage are limited in predetermined allowable voltage value and allow electricity by 350 one side of portion processed respectively
Below flow valuve, while control heating part, heated object is adjusted to design temperature.
Then, which has the function of following (being below limitation function)：Driving power is made to become than allowing
Below the low limitation power of power, specifically make driving voltage value and driving current value respectively become it is lower than allowing voltage value
It limits below limitation electric current low with than allowing current value below voltage.Limitation voltage value and limitation current value are stored in storage part
355.No matter in that situation, for whether using the limitation function, followed by narration.
EC200 has by storage part 250, input unit 255, judging part 260, Substrate treatment enforcement division 265, communication unit 270
With the function represented by each piece of output section 275.
Storage part 250 stores the processing scheme 250a of the processing sequence for representing substrate etc..In processing scheme 250a, by each
Processing includes the design temperature of mounting table 440a~d, cavity C, the setting temperature of exhaust lay out heated by block heater 451b
Degree (following is the design temperature of module).In addition, the scheme as processing scheme 250a storages, is not only related with film process
Scheme and for PM400a~d startup processing scheme.Startup processing can be PM from maintaining to the shape that can be handled
State movement processing, in this process to heated object implementation heat up from temperature such as room temperature to design temperature the step of etc..
Input unit 255 by operator by being operated to keyboard 710 or touch tablet 715, and be entered processing will
It asks.
Judging part 260 judges whether to make the limitation function of temperature control part 350 effective.For example, judging part 260,
The processing asked is when starting processing, be compared with current processing in execution, the design temperature of the heated object of mounting table etc. it is high
Processing when, judgement make the limitation function of temperature control part 350 effective.
The order of judging result and processing scheme 250a of the Substrate treatment enforcement division 265 based on judging part 260, control process
Execution.
Communication unit 270 will be sent from the control signal that Substrate treatment enforcement division 265 exports to controller 300.Controller 300
By 350 grade of temperature control part drive signal corresponding with control signal, 452 grade of power supply into PM400a~d is sent, by
This, acts according to each several part of drive signal PM400a~d, carries out film process to chip in cavity as a result,.
When undesirable condition is generated in throughout managing, output section 275 exports the situation to monitor 720 or loud speaker 725.
Fig. 6 is for illustrating the figure of the limitation function of temperature control part 350.(A) expression of Fig. 6 makes in temperature control part
350 limitation function is invalid and when starting each PM400a~d, the total current of each PM400a~d and with each heater
The time change of the corresponding electric current of structure, same time when (B) expression of Fig. 6 makes the limitation function of temperature control part 350 effective
Variation.
Substrate handling system in the present embodiment, the setting temperature of the heated object when substrate processing device starts etc.
In the step of spending the design temperature after change is warming up in the case of changing, by heated object, make temperature control part 350
Limitation function is effective.Specifically, in the substrate handling system of present embodiment, the result that is judged by judging part 260
For：It is required that processing be when starting processing, compared with current processing in execution, the design temperature of the heated object of mounting table etc.
During high processing, in the step of design temperature heated object being warming up to after change, make the limitation work(of temperature control part 350
It can be effective.
Such as, it is desirable that processing for start processing when, as shown in (A) of Fig. 6 and (B) of Fig. 6, with making limitation function invalid
When compare, heated object is warming up to change after design temperature the step of in, can inhibit to handle required PM400a
Total current in~d.
It is compared with current processing in execution, mounting table etc. in desired processing although being omitted to diagram
Heated object design temperature high processing when, also in the step of design temperature being warming up to heated object after change,
Make limitation function effective, thus, it is possible to obtain same result.
In addition, in the step of substrate handling system performs, above-mentioned heating step most power hungry.
It therefore, can be by power supply unit low capacity by mode described above using limitation function.
Then, in the substrate handling system of present embodiment, in order to be carried out at the same time in multiple PM400a~d
The heating step stated compared with situation about heating up in order in each PM, can make whole in a short time
The state that PM400a~d completions can be handled.
In addition, actually, performing record by the CPU215 of Fig. 2 has the control for the processing sequence for realizing above-mentioned function
Program or the IC (not shown) etc. that each function is used to implement by control can realize each work(of EC200 described above
Energy.For example, in the present embodiment, realize that the processing of above-mentioned function is suitable in fact, performing record by the CPU215 of Fig. 2 and having
Program, the processing scheme of sequence can realize judging part 260, each function of Substrate treatment enforcement division 265.
In addition, each function of controller 300, similary with each function of EC200, can also be realized by CPU.
Then, processing is illustrated using Fig. 7, the processing is：When requiring to start processing, require to perform with current
In processing compare, the processing that the design temperature of heated object is high when, controller 300a~d and EC200 carry out processing.Figure
7 be the flow chart for an example for representing above-mentioned processing.
As shown in the figure, EC200 is by input unit 255, startup processing, compared with current processing in execution, require quilt
During the high processing of the design temperature of calandria, when in other words input unit 255 has input above-mentioned processing (step S101), judging part
260 judge to make in the heating step for being warming up to the design temperature after the change of the processing limitation function effectively (step S102).
In addition, compared with current processing in execution, the processing that the design temperature of heated object is high, the design temperature of mounting table is not only
The processing higher than current temperature with both design temperatures of module can also include module design temperature and current temperature
Do not change and the only design temperature of the mounting table processing higher than current temperature.
Then, Substrate treatment enforcement division 265 is corresponding to PM400a~d of the processing with performing requirement by communication unit 270
Controller 300a~d, send the control signal and the relevant control signal of design temperature (step for making that limitation function effectively looks like
Rapid S103).In addition, it is following, make the device that PM400a is the processing for performing requirement.
The reception of temperature control part 350 of controller 300a makes the control signal (step that limitation function effectively looks like
When S201), it will allow for current value with reference to storage part 355 and allowable voltage value be rewritten as limitation current value and limitation voltage value (step
Rapid S202).The corresponding allowable current value of driving current and driving voltage and allowable current of mounting table heater 451a (should be electricity
Pressure) value and limitation current value and limitation voltage value, can value corresponding from block heater 451b it is different, can also be identical.
In addition, when carrying out the temperature control of heated object to each heated object multichannel, each path setting can be allowed
Current value and allowable voltage value and limitation current value and limitation voltage value.
Current value and limitation voltage value are limited, preferably parameter, that is, common operator inside program cannot be according to advance
The value of setting changes.If common operator can change, mistakenly changing and be set as higher value
When, the general power that substrate handling system integrally uses may be more than the allowance power of system entirety.
Then, temperature control part 350, while the driving current of heating part 451 and driving voltage are limited in limitation respectively
Below current value and limitation voltage value, while based on the control signal related with design temperature and from the defeated of temperature sensor
Go out, control the heating part 451 (step S203) of PM400a.Then, by controlling heating part 451 as described above, will be heated
The temperature of body is warming up to design temperature, at the end of heating up when being then stable in the design temperature (step S204, yes), temperature control
Portion 350 processed will limit current value and limitation voltage value is rewritten as the allowable current value of script and allowable current (should be voltage) value
(step S205).In addition, temperature control part 350, the information that will heat up the meaning of step completion is sent to the Substrate treatment of EC200
Enforcement division 265 (step S206).
When the Substrate treatment enforcement division 265 of EC200 receives the information for the meaning that heating step terminates (step S104),
In the case that the processing asked is startup processing, when the processing that startup processing terminates or requires is beyond startup processing, to control
Device 300a sends to perform the control signal of the processing, and the processing of requirement is made to perform (step S105) in PM400a.
In addition, be required with current processing in execution compared to heated object design temperature without variation processing,
Compared with current processing in execution during the low processing of the design temperature of heated object, judging part 260 is judged as making temperature control
The limitation function in portion 350 is invalid.Then, it is same as the prior art, the processing scheme 250a based on desired processing, at substrate
It manages enforcement division 265 and sends control signal to controller 300a, PM400a is made to perform the processing of requirement.
(second embodiment)
In the first embodiment, jointly judged to determine in the mounting table as heated object and cavity etc. be
It is no make temperature control part 350 limitation function it is effective or invalid.On the other hand, in the substrate handling system of second embodiment
In, each heated object is decided whether to make the limitation function of temperature control part 350 effective or invalid.
The heating arrangements of design temperature are warming up to accordingly, for the time is needed, do not make limitation function effective；For in short-term
The heating arrangements that interior heating terminates, make limitation function effective, corresponding to the opportunity that the heating between heating arrangements terminates, do not make
It is elongated to extend the time that heating needs the heating of prolonged heating arrangements to terminate.
In addition, when the temperature control of heated object is carried out to each heated object multichannel, it can be to each passage
Decide whether to make above-mentioned limitation function effective.
(the 3rd embodiment)
Fig. 8 be with block represent PM400a~d of the 3rd embodiment, controller 300a~d and EC200 each function work(
Figure can be formed.
In the third embodiment, EC200 stores the state that 250 each PM400a~d of storage part represents current
(status) information (status information 250b).In the status, have and represent in the change of design temperature to setting after change
" during heating ", expression during in the heating step of constant temperature degree are handled in " during the processing " of ongoing period, representation space
During " when idle ", it is right by Substrate treatment enforcement division 265 when there is the requirement of processing, after heating step etc.
Status information 250b is rewritten.
In addition, storage part 250 by above-mentioned state each storage in this state, presumption power use value letter
Breath (the power use value 250c for pressing state).Specifically, storage part 250 store respectively with " during heating ", " during processing " and " empty
The use performance number of the corresponding presumption of idle ".
And then maximum power value, the i.e. substrate handling system allowed in 250 storage substrate processing system entirety of storage part has
The information (all told information 250d) of the maximum capacity of some power supply units.
In addition, there is the judging part 260 of EC200 calculating part 260a, calculating part 260a to be based on when being required processing
The current status information of PM400a~d, the whole current use power of calculating/presumption substrate handling system.Specifically incite somebody to action,
When being required processing, calculating part 260a obtains the status information of each PM400a~d, obtains and the shape with reference to storage part 250
The power use value of the corresponding presumption of state simultaneously adds up to, and calculates the whole current use power of substrate handling system.Then, reference
Storage part 250, calculating part 260a calculate whole current use power and power supply units of estimated substrate handling system
Maximum capacity between difference.
In other words, the judging part 260 of the EC200 in first embodiment, meet to perform the step of be heated object
Design temperature change in the case of, this condition of the step of heated object is warming up to the design temperature after change (on
The condition of step) when, judge to make limitation function effective in the heating step, wherein, the situation that above-mentioned design temperature changes
Including when being handled including starting.
In this regard, meeting with the relevant condition of step and using the relevant item of power with current in substrate handling system
During both parts, the judging part 260 of present embodiment is judged as making in the heating step in the case that design temperature changes
Limitation function is effective.In present embodiment with it is above-mentioned it is current be using the relevant condition of power power supply unit maximum capacity
With using the poor smaller than specified value of power by the presumption that calculating part 260a is calculated.Meeting and the relevant condition of above-mentioned steps
When using both relevant conditions of power, it is judged as making limitation function effective with current.Then, have limitation function
The heating step is carried out in the state of effect.
In addition, at this point, have become the PM of " in heating " for state, limitation function can also be made effective.
There is following effect by using above-mentioned composition.That is, multiple PM400a of substrate handling system only are being formed
When~d is completely in heating step, substrate handling system it is whole using power it is possible that the whole beyond power supply unit is held
Amount.Therefore, judging part 260 judges to make the effective condition of limitation function of controller 300 be：Prediction is when performing startup processing etc.
Multiple PM400a~d all the situation in heating step, meet the maximum capacity of power supply unit and by calculating part 260a
The presumption calculated uses the situation of the difference of the power condition smaller than specified value.Make limitation function effectively up to heating as described above
The time that step terminates is elongated, but is formed by way of such as present embodiment, can only make limitation work(when necessary
Can be effective, strongly prevent that above-mentioned heating step the time terminated is elongated therefore, it is possible to one side, while making power supply unit low capacity
Change.
In addition, in the present embodiment, can to prestore multiple limitation performance numbers in storage part 355, and to
The maximum capacity that the temperature control part 350 of controller 300a sends power supply unit makes with the presumption calculated by calculating part 260a
With the information of the difference of power.Then, it is also possible that controller 300a temperature control part 350, based on above-mentioned difference from advance
The limitation performance number actually used in limitation function is selected in multiple limitation performance numbers of storage.
(the 4th embodiment)
Fig. 9 is the functional block diagram of the substrate handling system in the 4th embodiment.
The substrate handling system of Fig. 9, which has, measures the whole current measurement device 800 using power of the system.
In addition, when being required processing, the calculating part 260a of the judging part 260 of EC200 is calculated logical with reference to storage part 250
Cross the difference using power and the maximum capacity of power supply unit of the substrate handling system entirety of the measure of measurement device 800.
The judging part of present embodiment, it is similary with the judging part of the 3rd embodiment, meeting and the relevant condition of step
During with current in substrate handling system using both relevant conditions of power, it is judged as in setting design temperature change
In the case of heating step in make the limitation function effective.But the above-mentioned current use power phase in present embodiment
The condition of pass, it is different from the condition of the 3rd embodiment, be power supply unit maximum capacity and measured by measurement device 800
The whole conditions smaller than specified value using the difference of power of substrate handling system.Meet with the relevant condition of above-mentioned steps and with working as
During both preceding use relevant conditions of power, it is judged as making limitation function effective.Then, the effective shape of limitation function is made
The heating step is carried out under state.
There is following effect by using above-mentioned composition.That is, multiple PM400a of substrate handling system only are being formed
When~d is completely in heating step, substrate handling system it is whole using power it is possible that the maximum beyond power supply unit is held
Amount.Therefore, judging part 260 judges to make the effective condition of limitation function of controller 300 be：Prediction is when performing startup processing etc.
Multiple PM400a~d all the situation in heating step, meet the maximum capacity of power supply unit and measured current
Use the situation of the difference of the power condition smaller than specified value.Make limitation function effectively when heating step terminates as described above
Between it is elongated, but formed by way of such as present embodiment, can only make limitation function effective when necessary, therefore,
It can strongly prevent to above-mentioned heating step that the time terminated is elongated on one side, while making power supply unit low capacity.
Industrial utilizability
The present invention is useful in the technology for carrying out the processing such as film process to substrates such as chips.
Claims (7)
1. a kind of substrate processing device handled substrate, which is characterized in that including：
Heating part is heated to including loading the heated object of mounting table of substrate；With
The driving power of the heating part is limited to below allowance power by temperature control part, one side, while controlling the heating part
The temperature of the heated object is adjusted to design temperature,
The temperature control part, which has, makes the driving power become the limitation below the limitation power lower than the allowance power
Function,
It is set described in after change is warming up in the case that the design temperature of the heated object changes, by the heated object
In the step of constant temperature is spent, make the limitation function effective, wherein, the situation that the design temperature changes is filled including Substrate treatment
Including during the startup put.
2. substrate processing device as described in claim 1, it is characterised in that：
The step of the design temperature after changing is warming up in the case where the design temperature changes, by the heated object
In rapid, decide whether to make the limitation function effective by each heated object.
3. a kind of substrate handling system, it is characterised in that：
With multiple substrate processing devices handled substrate,
The substrate processing device includes：
Heating part is heated to including loading the heated object of mounting table of substrate；With
The driving power of the heating part is limited to below allowance power by temperature control part, one side, while controlling the heating part
The temperature of the heated object is adjusted to design temperature,
The substrate handling system has the control device for controlling the multiple substrate processing device,
The temperature control part of the substrate processing device, which has, makes the driving power become lower than the allowance power
The limitation function below power is limited,
The control device, which has, to be judged whether to make the effective judging part of the limitation function,
At least meet to perform the step of for the heated object design temperature change in the case of, heated described
When body is warming up to this condition of the step of design temperature after change, the judging part is judged as making institute in the step
It is effective to state limitation function, wherein, the situation that the design temperature changes is including during the startup of substrate processing device.
4. substrate handling system as claimed in claim 3, it is characterised in that：
Also meet in addition to the condition substrate handling system on current condition using power when, it is described
Judging part is judged as making the limitation function effective.
5. substrate handling system as claimed in claim 4, it is characterised in that：
Information of the judging part based on the respective current state of the multiple substrate processing device estimates described current make
With power,
It is described on being the maximum power allowed of the substrate handling system with being measured on the current condition using power
Described current difference this condition smaller than specified value using power.
6. substrate handling system as claimed in claim 4, it is characterised in that：
With measuring the current use power measurement device,
Described on the current condition using power is the maximum power allowed of the substrate handling system and measured institute
State current difference this condition smaller than specified value using power.
7. a kind of processing method for substrate of substrate handling system, it is characterised in that：
The substrate handling system has multiple substrate processing devices handled substrate,
The substrate processing device includes：
Heating part is heated to including loading the heated object of mounting table of substrate；With
The driving power of the heating part is limited to below allowance power by temperature control part, one side, while controlling the heating part
And adjust the temperature of the heated object to design temperature,
The substrate handling system has the control device for controlling the multiple substrate processing device,
The temperature control part of the substrate processing device, which has, makes the driving power become lower than the allowance power
The limitation function below power is limited,
The control device, which has, to be judged whether to make the effective judging part of the limitation function,
At least meet to perform the step of for the heated object design temperature change in the case of, heated described
When body is warming up to this condition of the step of design temperature after change, it is judged as making the limitation function by the judging part
Effectively, wherein, the situation that the design temperature changes including during the startup of substrate processing device,
The substrate processing device is while the driving power of the heating part is restricted to below the limitation power, while carrying out
The step of being judged as that the limitation function is made effectively to be heated up.
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| JP2016228747A JP6868376B2 (en) | 2016-11-25 | 2016-11-25 | Board processing equipment and board processing system |
| JP2016-228747 | 2016-11-25 |
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| JPH11111823A (en) * | 1997-10-06 | 1999-04-23 | Dainippon Screen Mfg Co Ltd | Heat treatment device for substrate |
| EP1032945A1 (en) * | 1997-11-06 | 2000-09-06 | Applied Materials, Inc. | Method and apparatus for reducing thermal gradients within a ceramic wafer support pedestal |
| JP2004009099A (en) * | 2002-06-06 | 2004-01-15 | Tamura Seisakusho Co Ltd | Heating device |
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| JP3491002B2 (en) * | 1995-06-08 | 2004-01-26 | 東京エレクトロン株式会社 | Operation control method and apparatus for a plurality of power usage systems |
| JPH11126743A (en) * | 1997-10-24 | 1999-05-11 | Tokyo Electron Ltd | Processor |
| JP2005125340A (en) * | 2003-10-22 | 2005-05-19 | Senju Metal Ind Co Ltd | Reflow furnace and its starting method |
| JP4887404B2 (en) * | 2009-06-16 | 2012-02-29 | 東京エレクトロン株式会社 | Temperature control method for heating apparatus for substrate processing system, program, computer recording medium, and substrate processing system |
| JP5778519B2 (en) * | 2011-08-11 | 2015-09-16 | アズビル株式会社 | Energy sum suppression control device, power sum suppression control device and method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11111823A (en) * | 1997-10-06 | 1999-04-23 | Dainippon Screen Mfg Co Ltd | Heat treatment device for substrate |
| EP1032945A1 (en) * | 1997-11-06 | 2000-09-06 | Applied Materials, Inc. | Method and apparatus for reducing thermal gradients within a ceramic wafer support pedestal |
| JP2004009099A (en) * | 2002-06-06 | 2004-01-15 | Tamura Seisakusho Co Ltd | Heating device |
| JP2010286179A (en) * | 2009-06-11 | 2010-12-24 | Senju Metal Ind Co Ltd | Electric furnace and method for controlling the same |
| JP2011249633A (en) * | 2010-05-28 | 2011-12-08 | Tokyo Electron Ltd | Heat-up control method, program, computer record medium, and substrate processing system, of heater for substrate processing system |
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| CN108109940B (en) | 2021-11-19 |
| KR102071771B1 (en) | 2020-01-30 |
| JP2018085474A (en) | 2018-05-31 |
| JP6868376B2 (en) | 2021-05-12 |
| KR20180059352A (en) | 2018-06-04 |
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