KR102071771B1 - Substrate processing apparatus and substrate processing system - Google Patents

Abstract

(Problem) At the time of changing a set temperature, using a small capacity power supply facility, a to-be-heated body, such as a stage on which a board | substrate is mounted, is heated up to the set temperature after a change, without requiring a long time.
(Measures) The heating part (400a to 400d) having the heating part 451 for heating a heated object such as a stage on which the substrate is mounted, and the heating part (limiting the driving power of the heating part 451 below the allowable power) 451 is a substrate processing apparatus which has the control controller 300a-300d which has the temperature control part 350 which controls the temperature of a to-be-heated body to set temperature, and performs a process with respect to a board | substrate, The temperature control part 350 is Has a limiting function that sets the driving power to a limiting power lower than the allowable power, and the limiting function is until the set temperature after the change at the time of the change of the set temperature of the heated object including the start of the substrate processing apparatus. It becomes effective in the process of heating up a to-be-heated body.

Description

Substrate Processing System and Substrate Processing System {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing system that perform a process such as a film forming process on a substrate such as a semiconductor wafer.

In the manufacturing process of a semiconductor manufacturing apparatus, various processes, such as a film-forming process and an etching process, are performed repeatedly with respect to board | substrates, such as a semiconductor wafer. In recent years, several substrate processing apparatuses which process a board | substrate are provided as mentioned above, and there existed one used as a substrate processing system (refer patent document 1).

In the substrate processing system of patent document 1, the process maximum power value consumed at the time of each process execution of the some process performed by the some substrate processing apparatus is memorize | stored. And in the system of this patent document 1, according to a process request, the sum total of the process maximum power value corresponding to the process currently running in each board | substrate processing apparatus, and the sum of the process maximum power value corresponding to a request process is computed, and a sum value is a system. Only execute the request process when it is within the maximum power available throughout.

Thereby, in the board | substrate system of patent document 1, a board | substrate can be processed using the small capacity electric power supply equipment, without reducing the number of processes performed in parallel.

(Prior art technical literature)

(Patent literature)

(Patent Document 1) Japanese Unexamined Patent Publication No. 2007-273888

By the way, in a substrate processing system, when setting the set temperature, such as the stage in which a board | substrate is mounted at the time of each board | substrate processing apparatus startup, or when switching to the process whose setting temperature of a stage is higher than a current process, a stage is changed to the set temperature after a change. A temperature raising step (hereinafter, a temperature raising step) is performed. Among the processes executed in the substrate processing apparatus, this temperature raising step consumes the most power.

Therefore, in the conventional system, when the temperature raising process is performed in parallel in all the substrate processing apparatuses, the power feeding equipment which has the allowable electric power more than the maximum electric power value which consumption is anticipated is prepared, or in each substrate processing apparatus in order. It was necessary to carry out a temperature raising process.

Also in this temperature raising step, by adopting the technique of Patent Document 1, it is possible to heat up the stage using a power feeding device having a small capacity without reducing the number of temperature rising steps performed in parallel.

However, when the technique of patent document 1 is employ | adopted, since execution of a temperature raising process may not be permitted, it may require a long time until a temperature raising process is completed for all the substrate processing apparatuses.

In addition, it is preferable that the power feeding equipment be further reduced in capacity.

This invention is made | formed in view of such a point, and is set after changing a to-be-heated body, such as a stage, using a small capacity feeder, without requiring a long time at the time of the change of the setting temperature including the start-up of an apparatus. An object of the present invention is to provide a substrate processing system capable of raising the temperature to a temperature and a substrate processing apparatus for realizing the system.

In order to achieve the above object, the present invention provides a heating unit for heating a heating target including a stage on which a substrate is mounted, and controlling the heating unit while limiting driving power of the heating unit to an allowable power or less. A substrate processing apparatus having a temperature control unit for adjusting the temperature of a sieve to a set temperature, wherein the temperature control unit has a limiting function that sets the driving power to be lower than or equal to the limiting power lower than the allowable power. The restriction function is effective in the step of raising the temperature of the heated object to the set temperature after the change at the time of changing the set temperature of the heated object including the start of the substrate processing apparatus. Doing.

According to the present invention, it is possible to temporarily limit the driving power to the limiting power lower than the allowable power at the time of the temperature raising step of the heated object to the set temperature after the change at the time of changing the set temperature of the heated object. . Therefore, the power supply equipment can be reduced in capacity.

At the time of changing the said set temperature, in the process of heating up the said to-be-heated body to the said set temperature after a change, you may decide whether to enable the said restriction | limiting function for every to-be-heated body.

According to another aspect of the present invention, there is provided a heating unit for heating a heating target including a stage on which a substrate is mounted, and controlling the heating unit while limiting the driving power of the heating unit to below the allowable power to control the temperature of the heating target. A substrate processing system having a temperature control unit for adjusting to a set temperature, the substrate processing system including a plurality of substrate processing apparatuses for processing a substrate, the control apparatus for controlling the plurality of substrate processing apparatuses, The temperature control unit has a limit function that sets the drive power to a limit power lower than the allowable power or less, and the control device has a decision unit that determines whether or not the limit function is effective, and the determination unit executes the step. The edge | side at the time of the change of the setting temperature of the said to-be-heated body including this at the time of starting of the said substrate processing apparatus. It is characterized in that it is determined that the said limit function is made effective in the said process, at least when the condition of the process of heating up the said to-be-heated body to the said set temperature after light is satisfied at least.

In addition to the above conditions, the determining unit preferably determines that the restriction function is effective when the condition relating to the current use power in the substrate processing system is satisfied.

The determination unit estimates the current use power based on the information of the current state of each of the plurality of substrate processing apparatuses, and calculates a condition associated with the current use power with the maximum power allowed for the substrate processing system. The condition may be such that the estimated difference of the used electric power is smaller than a predetermined value.

And a measurement device for measuring the current use power, wherein a difference between the maximum power allowed for the substrate processing system and the measured current use power is determined according to a condition related to the current use power. The condition may be smaller.

According to another aspect of the present invention, there is provided a heating unit for heating a heating target including a stage on which a substrate is mounted, and controlling the heating unit while limiting the driving power of the heating unit to below the allowable power to control the temperature of the heating target. A substrate processing method in a substrate processing system having a temperature control unit for adjusting to a set temperature and including a plurality of substrate processing apparatuses for processing a substrate, wherein the substrate processing system controls the plurality of substrate processing apparatuses. A control device, wherein the temperature control part of the substrate processing device has a limit function that sets the drive power to a limit power lower than the allowable power, and determines whether the control device makes the limit function effective. The to-be-heated target which has the determination part to perform, and the process to perform includes the time of starting of the said substrate processing apparatus. The determination unit determines that the restriction function is effective when at least the condition of the step of raising the heated object to the set temperature after the change at the time of changing the set temperature of the sieve is satisfied, The substrate processing apparatus is characterized in that the step of raising the temperature, which is determined to validate the limiting function, is performed while limiting the driving power of the heating unit below the limiting power.

According to the present invention, a substrate capable of raising a heated object such as a stage to a set temperature after a change by using a small-capacity power supply facility without requiring a long time at the time of changing the set temperature including the start of the apparatus. A processing system and a substrate processing apparatus for realizing the system can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the outline of the structure of the substrate processing system which concerns on 1st Embodiment of this invention.
FIG. 2 is a hardware configuration diagram of the master controller of FIG. 1.
3 is a hardware configuration diagram of the substrate processing system of FIG. 1.
4 is a longitudinal cross-sectional view of the process module of FIG. 1.
5 is a functional block diagram of the process module, control controller and master controller of FIG.
FIG. 6 is a diagram for describing a limit function of the temperature controller of FIG. 5.
FIG. 7 is a flowchart showing an example of processing performed by the control controller and the master controller when a startup process or the like is requested.
8 is a functional block diagram for explaining a substrate processing system according to a third embodiment of the present invention.
9 is a functional block diagram for explaining a substrate processing system according to a fourth embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to an accompanying drawing. In addition, in this specification and drawing, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol about the component which has a substantially same functional structure. In addition, this invention is not limited by embodiment shown below.

In the following description, a process of forming a Ti film (or TiN film) on a semiconductor wafer (hereinafter referred to as a wafer) as a substrate will be described as an example.

(1st embodiment)

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the outline of the structure of the substrate processing system which concerns on 1st Embodiment of this invention.

The substrate processing system 10 includes a host computer 100, a master controller (hereinafter referred to as an EC (Equipment Controller) 200), four control controllers 300a to 300d and four process modules (hereinafter referred to as PM ( Process Module) (400a to 400d). The host computer 100 and the EC 200 are connected by a network 500 such as the Internet. In addition, the EC 200 and the control controllers 300a to 300d are connected by a network 600 such as a LAN (Local Area Network).

The host computer 100 manages the entire substrate processing system 10 such as data management. The EC 200 is an example of a "control apparatus" according to the present invention, and stores a recipe (process recipe) used for controlling the film formation process of the substrate, and forms the film in the control controllers 300a to 300d according to the recipe. Management of sending a command to control the processing, saving a history of used recipes, and the like.

The control controllers 300a to 300d control the PMs 400a to 400d respectively based on the command transmitted from the EC 200, and each of the PMs 400a to 400d controls the wafers W carried in based on the control. Deposition process. Process data (for example, changes over time such as temperature, pressure, and gas flow rate) is transmitted from the control controllers 300a to 300d to the host computer 100 via the EC 200.

Each board | substrate 400a-400d and each control controller 300a-300d corresponding to each PM 400a-400d comprise the "substrate processing apparatus" which concerns on this invention.

2 is a hardware configuration diagram of the EC 200. The hardware configurations of the host computer 100 and the control controllers 300a to 300d are not shown, but are the same as those of the EC 200.

As illustrated, the EC 200 includes a read only memory (ROM) 205, a random access memory (RAM) 210, a central processing unit (CPU) 215, a bus 220, and an internal interface (I). / F) 225 and external interface (I / F) 230.

In the ROM 205, a basic program to be executed by the EC 200, a program to be started in case of abnormality, a process recipe, and the like are recorded. Various programs and data are stored in the RAM 210. The ROM 205 and the RAM 210 are examples of storage devices, and may be storage devices such as an EEPROM, an optical disk, a magneto-optical disk, or the like.

The CPU 215 controls the film formation process of the substrate in accordance with the process recipe. The bus 220 is a path for exchanging information between the devices of the ROM 205, the RAM 210, the CPU 215, the internal interface 225, and the external interface 230.

The internal interface 225 is configured to input data relating to the film forming process from the keyboard 710 or the touch panel 715 by an operator's operation, and output necessary data to the monitor 720 or the speaker 725. The external interface 230 transmits and receives data to and from the host computer 100 connected to the network 500, and transmits and receives data to and from each control controller 300a to 300d connected to the network 600.

3 is a hardware configuration diagram of the substrate processing system 10 for explaining the hardware configuration of the PM 400.

As shown, the substrate processing system 10 is equipped with the conveyance system H which carries in-and-out of the wafer W, and the processing system S which performs a film-forming process with respect to the wafer W. As shown in FIG. The conveying system H and the processing system S are connected through the load lock chambers 401a and 401b.

The conveying system H has the cassette stage 410 and the conveying stage 420. The cassette container 411 is mounted on the cassette stage 410. The cassette container 411 can accommodate up to 25 wafers W in multiple stages, for example.

The conveyance stage 420 is provided with the wafer conveyance mechanism 421 which conveys the wafer W. As shown in FIG. The wafer conveyance mechanism 421 has two conveyance arms 421a and 421b which hold | maintain the wafer W substantially horizontally, and the structure conveyed while holding the wafer W by either of these conveyance arms 421a and 421b. It is.

In the processing system S, a delivery chamber 430 and four PMs 400a to 400d are provided. The transmission chamber 430 has a sealable structure which is formed to have a substantially polygonal shape (hexagonal shape in the example of the figure) when viewed from above, for example. The delivery chamber 430 is connected to the PMs 400a to 400d through the gate valve which can be hermetically sealed. Moreover, the wafer conveyance mechanism 431 which conveys the wafer W is provided in the delivery chamber 430. The wafer conveyance mechanism 431 has two conveyance arms 431a and 431b which hold | maintain the wafer W substantially horizontally, and the structure conveys while holding the wafer W by either of these conveyance arms 431a and 431b. It is.

As for PM 400a-400d, stage 440a-440d which mounts the wafer W is provided, respectively.

The interiors of the delivery chamber 430 and the PMs 400a to 400d are each vacuum sucked to a desired degree.

With this structure, the processing system S carries the wafer W from the load lock chambers 401a and 401b to the respective PMs 400a to 400d via the transfer chamber 430 using the transfer arm 431a, and each stage. After the film forming process is carried out in the state mounted on the 440a to 440d, the film is carried out to the load lock chambers 401a and 401b via the delivery chamber 430 again.

In the present embodiment, the wafer W is carried in the PM 400a or the PM 400c, and the Ti film is formed. Then, the wafer W is carried in the PM 400b or the PM 400d to nitride the Ti film. The process of forming the TiN film is performed. In addition, the PMs 400a to 400d may perform a process for forming another kind of film as such a film forming process, and in addition to the film forming process, various processes such as diffusion treatment, etching process, ashing process, and sputtering process may be performed. You may.

4 is a longitudinal sectional view of each of PMs 400a-400d.

The PMs 400a to 400d have a substantially cylindrical chamber C configured to be airtight, and stages 440a to 440d for mounting the wafers W are provided therein as described above. The stages 440a to 440d are made of ceramics such as AlN, for example, and are supported by a cylindrical support member 450.

The stage heater 451a is embedded in the stages 440a to 440d. The power supply unit 452a is connected to the stage heater 451a outside the chamber C, and the stage heater 451a is driven by the alternating voltage output from the power supply unit 452a to generate heat, and the stages 440a to 440d are provided. The temperature of) is kept heated up to the set temperature defined in the process recipe.

In addition, a module heater (refer to reference numeral 451b in FIG. 5) is provided in the exhaust line from chamber C to the exhaust device 480 described later, and the module heater is different from the power supply unit 452a. It is connected to the power supply unit (see 452b in FIG. 5). The module heater for chamber C is provided for example on the ceiling wall. By this module heater, the ceiling wall part and the exhaust line of the chamber C are heated and maintained at a set temperature.

Although not shown, in order to heat and maintain a heated object such as the stages 440a to 440d at a set temperature, a temperature sensor such as a thermocouple for measuring the temperature of the heated object is used for the stages 440a to 440d and the ceiling. It is provided in a wall part.

The shower head 460 is provided in the ceiling wall part of the chamber C via the insulating member 453. The shower head 460 is composed of an upper block body 461, a middle block body 462, and a lower block body 463.

The gas passage 461a and the gas passage 461b are formed in the upper block body 461. In the stopping block body 462, a gas passage 462a in communication with the gas passage 461a and a gas passage 462b in communication with the gas passage 461b are formed. In the lower block body 463, a plurality of injection holes 463a and injection holes 463b communicated with the gas passage 462a and the gas passage 462b are alternately formed. The gas supply mechanism 470 is connected to the shower head 460 via gas lines 464a and 464b.

The gas supply mechanism 470 is comprised from the gas supply sources 471a-471e, the some valve 472, and the some mass flow controller 473, and controls each opening / closing of each valve 472, The processing gas is selectively supplied into the chamber C from the gas source. In addition, each mass flow controller 473 adjusts the processing gas to a desired concentration by controlling the flow rate of the processing gas supplied by each mass flow controller 473.

A gas source of, ClF ₃ gas supply source (471a), the cleaning gas is ClF ₃ gas supply, and TiCl ₄ gas supply source (471b) is supplied to the TiCl ₄ gas of Ti is contained for forming a Ti film, and the Ar supply source 471c supplies an Ar gas that is a plasma excitation gas. In addition, H ₂ supply source (471d) is, the reducing gas supplied to the H ₂ gas, NH ₃ gas supply source (471e) is, supplying the NH ₃ gas containing the N to Ti nitride film.

The above-described gas line 464a is connected to the ClF ₃ gas supply source 471a, the TiCl ₄ gas supply source 471b, and the Ar supply source 471c. A gas line 464b is connected to the H ₂ supply source 471d and the NH ₃ gas supply source 471e. Although not shown, the exhaust system 480 is connected to the TiCl ₄ gas supply source 471b via a gas line different from that described above.

The shower head 460 is connected to a high frequency power supply 491 via a matching unit 490. On the other hand, electrodes 492 are embedded in the stages 440a to 440d as counter electrodes of the shower head 460. The high frequency power supply 494 is connected to the electrode 492 via the matching unit 493, and a bias voltage is generated by supplying high frequency power to the electrode 492 from the high frequency power supply 494.

In the chamber C, an exhaust pipe 481 is provided on the bottom wall surface thereof, and an exhaust device 480 including a vacuum pump is connected to the exhaust pipe 481. The exhaust device 480 is configured to depressurize the inside of the chamber C to a predetermined degree of vacuum by exhausting the gas in the chamber C via the exhaust pipe 481.

By this structure, the processing gas supplied to the chamber C from the gas supply mechanism 470 via the shower head 460 is plasma-formed by the high frequency electric power supplied from the high frequency power supply 491 to the shower head 460, The wafer W is formed into a film by the plasma. For example, in the case where the Ti film is formed in the PM 400a, after the wafer W is conveyed, the TiCl ₄ gas supplied from the TiCl ₄ gas supply source 471b is carriered with Ar gas, and the gas line 464a and the gas passage ( It is injected into the chamber C from the injection hole 463a past 461a and 462a. On the other hand, the H ₂ gas supplied from the H ₂ source 471d is injected into the chamber C from the injection hole 463b through the gas lines 464b and the gas passages 461b and 462b. In this way, the TiCl ₄ gas and the H ₂ gas are completely independently supplied to the chamber C, and then supplied into the chamber C, and then converted into plasma by high frequency power while being mixed with the Ti film (TiSi _2). Film) is formed.

Thus, the wafer W in which the Ti film was formed is further conveyed to PM 400b as needed, and the process which nitrides the surface is performed. In this case, Ar gas, the gas line (464a), the gas passages (461a, 462a) to and past the jet into the chamber C from the plurality of injection holes (463a), NH ₃ gas and H ₂ gas, the gas line (464b) The gas is injected into the chamber C from the plurality of injection holes 463b through the gas passages 461b and 462b. The supplied gas is converted into plasma by high frequency power, whereby the wafer W is nitrided (TiN film forming process). After the predetermined number of wafers W are formed, the inside of the chamber C is cleaned by supplying ClF ₃ gas into the chamber C.

5 is a functional block diagram showing each function of the PMs 400a to 400d, the control controllers 300a to 300d, and the EC 200 in blocks. In addition, only the main part of this embodiment is shown.

PM 400a-400d has the function represented by each block of the heating part 451 and the power feeding part 452. The heating part 451 heats and maintains a to-be-heated body, such as a wafer and a chamber, at set temperature, and is comprised by heating means, such as the stage heater 451a and the module heater 451b. The power supply part 452 supplies electric power to the heating part 451, and is comprised from the power supply unit 452a which supplies the stage heater 451a, the power supply unit 452b which supplies the module heater 451b, and the like.

The control controllers 300a to 300d have a function represented by each block of the temperature control unit 350 and the storage unit 355. The temperature control part 350 controls the heating part 451 of PM 400a-400d, and adjusts to-be-heated bodies, such as a stage, to set temperature. Specifically, the temperature control part 350 acquires the information of the temperature of a to-be-heated body from the temperature sensor not shown which measures the temperature of a to-be-heated body, The information of the temperature of this to-be-heated body, and the setting temperature information. Based on this, the object to be heated is adjusted to the set temperature by controlling the output of the power feeding section 452 to the heating section 451.

In addition, when adjusting a to-be-heated body to set temperature, the temperature control part 350 limits the heating part 451, restrict | limiting the electric power supplied to the heating part 451 of PM400a-400d to below predetermined allowable power. To control. Specifically, the temperature control part 350 controls the heating part 451, restricting the drive current and the drive voltage of the heating part 451 to below a predetermined allowable voltage value and an allowable current value, respectively, and a heating body is controlled. Adjust to the set temperature.

The temperature control part 350 further sets the driving power to be lower than or equal to the limiting power lower than the allowable power. Specifically, the driving voltage value and the driving current value are lower than the allowable voltage value and the limiting current value lower than the allowable current value, respectively. It has the following functions (hereinafter, referred to as a limit function). The limit voltage value and the limit current value are stored in the storage unit 355. In what case, the limitation function will be described later.

The EC 200 performs functions represented by each block of the storage unit 250, the input unit 255, the determination unit 260, the substrate processing execution unit 265, the communication unit 270, and the output unit 275. Have

The storage unit 250 stores the process recipe 250a indicating the processing order of the substrate and the like. The process recipe 250a includes data of the set temperatures of the stages 440a to 440d and the set temperatures of the chamber C and the exhaust line (hereinafter, the set temperatures of the modules) that are heated by the module heater 451b for each process. do. In addition, the recipe stored as the process recipe 250a includes not only the recipe related to the film forming process but also the recipe for the startup process of the PMs 400a to 400d. The start-up process refers to a process of transitioning from a maintenance to a processable state of PM. In this process, a step of raising the temperature of the heated object from a temperature such as normal temperature to a set temperature is performed.

The input unit 255 inputs a process request by the operator operating the keyboard 710 or the touch panel 715.

The determination unit 260 determines whether the limit function of the temperature control unit 350 is valid. For example, the determination unit 260 performs the limit function of the temperature control unit 350 when the requested process is a start-up process or a process in which a set temperature of a heated object such as a stage is higher than a process currently being executed. We decide to validate.

The substrate processing execution unit 265 controls the execution of the process based on the determination result of the determination unit 260 and the procedure of the process recipe 250a.

The communication unit 270 transmits the control signal output from the substrate processing execution unit 265 to the control controller 300. The control controller 300 transmits a drive signal corresponding to the control signal by the temperature control unit 350 or the like to the power supply unit 452 in the PMs 400a to 400d and thereby the PMs 400a to. Each operation of 400d) is performed to form a film on the wafer in the chamber.

The output unit 275 outputs the effect to the monitor 720 or the speaker 725 when a problem occurs during each processing.

6 is a view for explaining a limit function of the temperature control unit 350. FIG. 6 (A) shows the total current of each of the PMs 400a to 400d and the currents for the respective heating means when the PM 400a to 400d is started by invalidating the limit function of the temperature control unit 350. FIG. 6 (B) shows the change in time when the limit function of the temperature control unit 350 is validated.

In the substrate processing system which concerns on this embodiment, in the process of heating up a to-be-heated body to the set temperature after a change at the time of the change of the set temperature of the to-be-heated body, such as at the time of startup of a substrate processing apparatus, a temperature control part ( The limit function of 350 is enabled. Specifically, in the substrate processing system according to the present embodiment, as a result of the determination in the determination unit 260, when the requested process is a startup process or a set temperature of a heated object such as a stage than a currently running process, Is a high process, the limit function of the temperature control part 350 becomes effective in the process of heating up a to-be-heated body to the preset temperature after a change.

For example, when the requested process is a startup process, as shown in Figs. 6A and 6B, in the step of raising the temperature of the heated object to the set temperature as compared with the case where the limit function is invalidated, the process The total current in the PMs 400a to 400d required can be suppressed.

Although not shown, even when the required process is a process in which the set temperature of the heated object such as a stage is higher than that of the currently executing process, the limit function is effectively used in the temperature raising process of heating the heated object to the set temperature after the change. By doing so, the same result can be obtained.

In addition, among the processes performed in the substrate processing system, the above-mentioned temperature raising process consumes the most power.

Therefore, by using the restriction function as described above, the power supply equipment can be reduced in capacity.

Moreover, in the substrate processing system of this embodiment, since the above-mentioned temperature raising process can be performed in parallel between some PM 400a-400d, all PMs 400a-in a short time compared with the case where temperature rising is performed every PM. 400d) can be completed in a processable state.

In addition, each function of the EC 200 described above is actually executed by the CPU 215 of FIG. 2 by executing a control program describing a processing procedure for realizing such a function, or realizing each function. By controlling an IC or the like not shown. For example, in the present embodiment, each function of the determination unit 260 and the substrate processing execution unit 265 actually executes a program or a process recipe that describes the processing procedure for the CPU 215 to realize such a function. Is achieved by.

In addition, each function of the control controller 300 is also achieved by the CPU or the like like each function of the EC 200.

Next, a process performed by the control controllers 300a to 300d and the EC 200 when a start-up process is requested or when a process having a higher set temperature of a heating target than a currently running process is requested is illustrated. It demonstrates using 7. 7 is a flowchart showing an example of the above processing.

As shown in the drawing, the EC 200 inputs the process through the input unit 255, in other words, when a process requiring a higher set temperature of the heating element than the process being executed is requested. ) Is entered (step S101), the determination unit 260 determines that the limit function is effective in the temperature raising step up to the set temperature after the change of the process (step S102). In addition, a process in which the set temperature of the heating object is higher than the process currently being executed is not only a process in which both the set temperature of the stage and the module set temperature are higher than the current one, but the module set temperature is not changed from the current one and the stage is set. Only temperatures may include processes that are higher than current.

Subsequently, the substrate processing execution unit 265 controls the control signal for validating the limiting function and the control signal relating to the set temperature to the control controllers 300a to corresponding to the PMs 400a to 400d for executing the requested process. 300d) is transmitted via the communication part 270 (step S103). In addition, below, it is assumed that PM 400a executes the requested process.

When the temperature control part 350 of the control controller 300a receives the control signal which makes the limit function effective (step S201), it references a memory | storage part 355, and the allowable current value and the allowable voltage value are limited current values and limits. The voltage value is updated (step S202). The allowable current value, the allowable voltage value, the limit current value, and the limit voltage value for the drive current and the drive voltage of the stage heater 451a may be different or the same as those for the module heater 451b. In addition, when the temperature control of a to-be-heated body is multi-channeled for every to-be-heated body, a permissible current value, a permissible voltage value, a limiting current value, and a limiting voltage value can be set for every channel.

It is preferable that the limit current value and the limit voltage value are parameters within a program, that is, the ordinary operator cannot change it from a predetermined value. This is because if the ordinary operator can change the data, the total power used by the entire substrate processing system may exceed the allowable power of the entire system in the case of a wrong change and a high value is set.

Then, the temperature control part 350 limits the drive current and the drive voltage of the heating part 451 below the limit current value and the limit voltage value, respectively, based on the control signal and the output from the temperature sensor regarding the set temperature. The heating unit 451 of the PM 400a is controlled (step S203). Then, by the control of the heating unit 451, when the temperature of the heated portion is raised to the set temperature and stabilized at the set temperature, that is, the temperature rise is completed (step S204, YES), the temperature control unit 350 Updates the limit current value and limit voltage value with the original allowable current value and allowable current value (step S205). Moreover, the temperature control part 350 transmits the information of the completion of a temperature rising process to the board | substrate process execution part 265 of EC200 (step S206).

When the substrate processing execution unit 265 of the EC 200 receives the information that the temperature raising step is completed (step S104), when the requested process is the startup process, the substrate processing execution unit 265 ends the startup process, and further, the requested process. If is other than the startup process, a control signal for executing the process is transmitted to the control controller 300a, and the requested process is executed by the PM 400a (step S105).

In addition, the determination part 260 is the temperature control part 350, when the process which does not change the set temperature of a to-be-heated body in the process currently being performed, or the process in which the set temperature of a to-be-heated body is lower than the process currently running is requested | required It is determined that the limiting function of is invalidated. As in the related art, the control signal 300a is transmitted from the substrate processing execution unit 265 to the control controller 300a based on the process recipe 250a of the requested process, and the PM 400a is executed.

(2nd embodiment)

In the first embodiment, whether or not the limiting function of the temperature control unit 350 is enabled is determined and determined in common in the stage, the chamber, and the like, which are the objects to be heated. In the substrate processing system of the second embodiment, on the other hand, whether or not the limiting function of the temperature control unit 350 is to be effective is determined for each heated object.

As a result, the limiting function is not activated for the heating means that requires time for the temperature increase to the set temperature, and the limiting function is enabled for the heating means for which the temperature is completed in a short time, and the timing of completion of the temperature increase between the heating means is achieved. In accordance with the above, the time until the temperature increase completion of the heating means that takes a long time to increase the temperature is not lengthened.

In the case where the temperature control of the object to be heated is multichanneled for each member to be heated, it may be determined for each channel whether the above limit function is effective.

(Third embodiment)

FIG. 8 is a functional configuration diagram showing, in blocks, the functions of the PMs 400a to 400d, the control controllers 300a to 300d, and the EC 200 according to the third embodiment.

In the third embodiment, the EC 200 stores information (status information 250b) indicating the current state (status) by the storage unit 250 for each of the PMs 400a to 400d. The status includes "at the time of temperature rise" indicating that the temperature rise step is performed up to the set temperature after the change at the time of change of the set temperature, "process at" indicating the process is being executed, and "idle time" indicating being idle. The status information 250b is updated by the substrate processing execution unit 265 at the time of request of the process or after the temperature raising process is completed.

The storage unit 250 also stores information of estimated power consumption (estimate estimated power information 250c for each status) in the status for each of the statuses. Specifically, the storage unit 250 stores the estimated used power value corresponding to each of " rising temperature, " " processing time " and " idle time. &Quot;

In addition, the storage unit 250 stores the maximum power value allowed for the entire substrate processing system, that is, information (maximum capacity information 250d) of the maximum capacity of the power supply equipment that the substrate processing system has.

In addition, the determination unit 260 of the EC 200 calculates / estimates the current use power of the entire substrate processing system based on the information of the current status of the PMs 400a to 400d when the process is requested. It has a calculating part 260a. Specifically, the calculation unit 260a refers to the storage unit 250 when the process is requested, acquires information on the status of each of the PMs 400a to 400d, and estimates the used electric power value corresponding to the status. It acquires and sums, and calculates the current use power of the whole substrate processing system. In addition, the calculation unit 260a refers to the storage unit 250 to calculate a difference between the estimated current power used in the entire substrate processing system and the maximum capacity of the power supply facility.

In other words, the determination unit 260 of the EC 200 according to the first embodiment, in other words, the set temperature after the change at the time of the change of the set temperature of the heated object including the startup process. When the condition (the condition regarding a process) which is the process of heating up the said to-be-heated body is satisfied until now, it is determined that the restriction | limiting function is made effective in the said temperature rising process.

On the other hand, when the determination part 260 of this embodiment satisfy | fills both the conditions regarding a process and the conditions regarding the current use electric power in a substrate processing system, it limits in the temperature rising process at the time of a change of setting temperature. Determine that the function is enabled. The condition concerning the present use power in this embodiment is a condition that the difference between the maximum capacity of a power supply installation and the estimated use power calculated by the calculating part 260a is smaller than a predetermined value. When both of the conditions relating to this process and the conditions relating to the current power consumption are satisfied, it is determined that the limit function is valid. Then, the temperature raising step is performed while the limit function is valid.

At that time, the limit function may also be made effective for PMs whose status is already in the "heating temperature."

By setting it as the above-mentioned structure, there exist the following effects. In other words, only when all of the plurality of PMs 400a to 400d constituting the substrate processing system are in the temperature raising step, the power used by the entire substrate processing system may exceed the total capacity of the power supply equipment. Therefore, when executing the startup process or the like, it is predicted that all of the plurality of PMs 400a to 400d are in the temperature raising step, that is, the difference between the maximum capacity of the power supply facility and the estimated used power calculated by the calculation unit 260a. The determination part 260 makes it the condition which determines that the restriction | limiting function of the control controller 300 is valid to satisfy the condition of being smaller than a predetermined value. When the limiting function is effective as described above, the time until the temperature raising step is completed is long. However, when the temperature raising step is completed, the limiting function can be enabled only when necessary by the configuration as in the present embodiment. It is possible to reduce the capacity of the power supply equipment, while preventing as long as possible the time.

In addition, in the present embodiment, the limited power value is stored in plural in advance in the storage unit 355, and the control controller 300a stores information on the difference between the maximum capacity of the power supply facility and the estimated used power calculated by the calculation unit 260a. May be transmitted to the temperature control unit 350 of FIG. The temperature control unit 350 of the control controller 300a may select the limited power values actually used in the limit function based on the difference from the plurality of limited power values stored in advance.

(4th embodiment)

9 is a functional block diagram of a substrate processing system according to the fourth embodiment.

The substrate processing system of FIG. 9 is provided with the measuring apparatus 800 which measures the present use power of the whole system.

In addition, the calculation unit 260a of the determination unit 260 of the EC 200 refers to the storage unit 250 when a process is requested and uses the power of the entire substrate processing system measured by the measurement apparatus 800. The difference between the maximum capacity of the overloading equipment is calculated.

In the temperature raising step at the time of changing the set temperature, when the determination unit of the present embodiment satisfies both the condition relating to the step and the condition relating to the current use power in the substrate processing system as in the third embodiment. It is determined that the restriction function is valid. However, in the present embodiment, the conditions related to the current power consumption differ from those related to the third embodiment in that the difference between the maximum capacity of the power supply facility and the current power consumption measured by the measuring device 800 is small. It is a condition that is smaller than politics. When both of the conditions relating to this process and the conditions relating to the current power consumption are satisfied, it is determined that the limit function is valid. Then, the temperature raising step is performed while the limit function is valid.

By setting it as the above-mentioned structure, there exist the following effects. In other words, only when all of the plurality of PMs 400a to 400d constituting the substrate processing system are in the temperature raising step, there is a possibility that the power used in the entire substrate processing system exceeds the maximum capacity of the power supply equipment. Therefore, it is predicted that when the startup process or the like is performed, all of the plurality of PMs 400a to 400d are in the temperature raising step, that is, the difference between the maximum capacity of the power supply facility and the measured current use power is smaller than the predetermined value. The determination unit 260 is a condition for determining that the limit function of the control controller 300 is valid to satisfy the condition. When the limiting function is effective as described above, the time until the temperature raising step is completed is long. However, when the temperature raising step is completed, the limiting function can be enabled only when necessary by the configuration as in the present embodiment. It is possible to reduce the capacity of the power supply equipment, while preventing as long as possible the time.

(Industrial availability)

INDUSTRIAL APPLICABILITY The present invention is useful for a technique for performing a film forming process or the like on a substrate such as a wafer.

10: substrate processing system
100: host computer
200: master controller (EC)
205: ROM
210: RAM
215: CPU
220: the bus
225: internal interface
230: external interface
250: memory
255: input unit
260: determination unit
260a: calculating unit
265: substrate processing execution unit
270: communication unit
275 output section
300a ~ 300d: control controller
350: temperature control unit
355 memory
400a ~ 400d: Process Module (PM)
440a ~ 440d: stage
451: heating unit
451a: stage heater
451b: module heater
452: feeding part
452a: power supply unit
452b: Feeding Unit
800: measuring device

Claims (7)

A heating part for heating the heated object including a stage on which a substrate is mounted, and a temperature control part for controlling the heating part to limit the driving power of the heating part to an allowable power or less to adjust the temperature of the heated object to a set temperature. As a substrate processing apparatus for processing a substrate,
The temperature control unit has a limit function that sets the drive power to be lower than the limit power lower than the allowable power,
The restriction function is effective only in the step of raising the temperature of the heated object to the set temperature after the change at the time of changing the set temperature of the heated object including the start of the substrate processing apparatus. felled
Substrate processing apparatus, characterized in that.
The method of claim 1,
The substrate processing apparatus according to claim 12, wherein whether or not to activate the limit function in the step of raising the heated object to the set temperature after the change at the time of changing the set temperature is effective.
A heating part for heating the heated object including a stage on which a substrate is mounted, and a temperature control part for controlling the heating part to limit the driving power of the heating part to an allowable power or less to adjust the temperature of the heated object to a set temperature. A substrate processing system having a plurality of substrate processing apparatuses for processing a substrate,
A control device for controlling the plurality of the substrate processing apparatuses,
The temperature control part of the substrate processing apparatus has a limit function of setting the drive power to a limit power lower than the allowable power,
The control device has a determining unit that determines whether or not the limiting function is valid,
The determination unit is a condition that the step of executing the step of raising the heated object to the set temperature after the change at the time of changing the set temperature of the heated object including the start of the substrate processing apparatus. Only when it satisfies the above, it is determined that the restriction function is valid in the process.
Substrate processing system, characterized in that.
The method of claim 3, wherein
And the determining unit determines that the limit function is valid when the condition relating to the current use power in the substrate processing system is satisfied in addition to the condition.
The method of claim 4, wherein
The determination unit estimates the current use power based on the information of the current state of each of the plurality of substrate processing apparatuses,
The condition related to the current used power is a condition that the difference between the maximum power allowed in the substrate processing system and the estimated current used power is smaller than a predetermined value.
Substrate processing system, characterized in that.
The method of claim 4, wherein
And a measuring device for measuring the current power used,
The condition related to the current use power is a condition that the difference between the maximum power allowed in the substrate processing system and the measured current use power is smaller than a predetermined value.
Substrate processing system, characterized in that.
A heating part for heating the heated object including a stage on which a substrate is mounted, and a temperature control part for controlling the heating part to limit the driving power of the heating part to an allowable power or less to adjust the temperature of the heated object to a set temperature. And a substrate processing method in a substrate processing system including a plurality of substrate processing apparatuses for processing a substrate.
The substrate processing system includes a control device that controls the plurality of the substrate processing devices,
The temperature control unit of the substrate processing apparatus has a limit function of setting the drive power to a limit power lower than the allowable power,
A determination unit that determines whether the control device validates the restriction function,
When the process to be performed satisfies the condition of the step of raising the temperature of the heated object to the set temperature after the change at the time of changing the set temperature of the heated object including the start of the substrate processing apparatus. However, it is determined by the determination unit that the restriction function is valid,
The substrate processing apparatus performs the step of raising the temperature, which is determined to enable the limiting function, while limiting the driving power of the heating unit below the limiting power.
The substrate processing method characterized by the above-mentioned.

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