CN108109914A - The production method of bipolar transistor - Google Patents
The production method of bipolar transistor Download PDFInfo
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- CN108109914A CN108109914A CN201711367161.4A CN201711367161A CN108109914A CN 108109914 A CN108109914 A CN 108109914A CN 201711367161 A CN201711367161 A CN 201711367161A CN 108109914 A CN108109914 A CN 108109914A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 39
- 229920005591 polysilicon Polymers 0.000 claims abstract description 39
- 238000000407 epitaxy Methods 0.000 claims abstract description 26
- 125000006850 spacer group Chemical group 0.000 claims abstract description 18
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 241000209094 Oryza Species 0.000 claims 2
- 235000007164 Oryza sativa Nutrition 0.000 claims 2
- 235000009566 rice Nutrition 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
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- H01L29/6625—
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- H01L29/735—
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- Bipolar Transistors (AREA)
Abstract
A kind of production method of bipolar transistor includes：P type substrate is provided, form n type buried layer and N-type epitaxy layer, it is formed through the N-type epitaxy layer and the n type buried layer and extends to the isolated groove in the P type substrate, it is formed and runs through the N-type epitaxy layer and extend to the N traps in the n type buried layer and form oxide layer in the isolated groove, the N traps and the N-type epitaxy layer and run through the opening of the oxide layer and the corresponding N-type epitaxy layer；P-type injection is done to the N-type epitaxy layer using the opening, is tied deeply so as to form p-type on the N-type epitaxy layer surface；Form the p-type contact polysilicon being arranged on the p-type knot and oxide layer deeply and the spacer above p-type contact polysilicon；N-type ion implanting is done to p-type knot deeply so that p-type knot deeply forms the p-type contact zone of base and the connection base；Heat is done to the base to drive in, to form the base shallow junction for connecting the p-type contact zone.
Description
【Technical field】
The present invention relates to semiconductor fabrication process technical fields, particularly, are related to a kind of production method of bipolar transistor.
【Background technology】
Point contact transistor originating from invention in 1948, develops into junction type triode the beginning of the fifties, i.e., present institute
The bipolar transistor of title.There are two types of basic structures for bipolar transistor：Positive-negative-positive and NPN type.It is intermediate in this 3 layers of semiconductors
One layer of title base, two layers of outside claims launch site and collecting zone respectively.When base injects a small amount of electric current, in launch site and collecting zone
Between will form larger electric current, here it is the enlarge-effects of transistor.In bipolar transistor, electronics and hole simultaneously participate in
It is conductive.Compared with field-effect transistor, bipolar transistor switch speed is slow, and input impedance is small, and power consumption is big.Single bipolar transistor
Pipe volume is small, light-weight, little power consumption, long lifespan, reliability are high, be widely used in broadcast, TV, communication, radar, computer,
The fields such as self-con-tained unit, electronic instrument, household electrical appliance, the effects that playing amplification, vibration, switch.
In the technique of current bipolar transistor, when doing etching polysilicon, to ensure that etching polysilicon is clean, to add certain
The over etching of amount, the over etching amount usually added are 20% or so of polysilicon thickness, this over etching can be to the silicon face of lower section
Also result in a certain amount of etching.With the fluctuation (such as polysilicon thickness limit on the lower side, etching technics etch amount limit on the upper side) of technique,
The silicon loss of lower section is just more serious at this time.The situation of most serious, the silicon loss amount of lower section reach 3000A.And in next step process
Base p-type injection is done, at this point, the channel bottom of silicon face can only be injected into, when further carrying out base annealing, base impurity
It can spread downwards, meanwhile, the p-type ion of injection can also be spread into silicon in polysilicon, form base shallow junction.However, usually
Polysilicon diffuses into the p type impurity junction depth in silicon as 3000A or so, and the presence of this groove can cause p-type contact zone and base
Shallow junction can not contact, and ultimately result in emitter base open circuit, the device failure of device.
【The content of the invention】
One of purpose of the present invention is to provide a kind of making of bipolar transistor to solve above-mentioned technical problem
Method.
A kind of production method of bipolar transistor, comprises the following steps：
P type substrate is provided, n type buried layer is formed in the P type substrate, N-type epitaxy layer is formed on the n type buried layer,
It is formed through the N-type epitaxy layer and the n type buried layer and extends to the isolated groove in the P type substrate, formed through institute
It states N-type epitaxy layer and extends to the N traps in the n type buried layer and in the isolated groove, the N traps and the N-type extension
Oxide layer and the opening through the oxide layer and the corresponding N-type epitaxy layer are formed on layer；
P-type injection is done to the N-type epitaxy layer using the opening, it is deep so as to form p-type on the N-type epitaxy layer surface
Knot；
It forms the p-type contact polysilicon being arranged on the p-type knot and oxide layer deeply and contacts polysilicon positioned at the p-type
The spacer of top；
N-type ion implanting is done to p-type knot deeply so that p-type knot deeply forms the P of base and the connection base
Type contact zone；
Heat is done to the base to drive in, to form the base shallow junction for connecting the p-type contact zone.
In one embodiment, the production method further includes：
Polysilicon and the spacer are contacted in the p-type and forms isolation side walls adjacent to the base shallow junction one side, in institute
It states and forms emitter-polysilicon on base shallow junction；
Medium isolation is formed on the oxide layer, the spacer, the isolation side walls and the emitter-polysilicon
Layer, through the first through hole of the buffer layer and the oxide layer, through the buffer layer and the spacer
Second through hole, formed through the third through-hole of the buffer layer and on the buffer layer collector, base stage and
Emitter, the collector connect the N traps by the first through hole, and the base stage passes through described in second through hole connection
P-type contacts polysilicon, and the emitter connects the emitter-polysilicon by the third through-hole.
In one embodiment, in the step of doing p-type injection to the N-type epitaxy layer using the opening, the note
Entering ion includes B ions.
In one embodiment, the Implantation Energy is 50kev.
In one embodiment, the implantation dosage is every square centimeter 1 for 15 times of 15 powers to every square centimeter 5
Side.
In one embodiment, the depth that the p-type is tied deeply is 0.5um.
In one embodiment, in the step of knot does N-type ion implanting deeply to the p-type, the injection ion includes
BF2, P or As ion.
In one embodiment, the implantation dosage is every square centimeter 2 for 13 times of 13 powers to every square centimeter 5
Side.
In one embodiment, the depth of the base is 0.2um.
In one embodiment, form the p-type contact polysilicon being arranged on the p-type knot and oxide layer deeply and be located at
The step of spacer above p-type contact polysilicon, includes：It is sequentially formed in the p-type deeply knot and the oxide layer more
Crystal silicon layer and separation layer perform etching the polysilicon layer and the separation layer, so as to formed p-type contact polysilicon and
The spacer.
Compared to the prior art, in the production method of bipolar transistor of the present invention, by the p-type deeply knot do N-type from
Son injection so that p-type knot deeply forms the p-type contact zone of base and the connection base；Further by the base
Area does heat and drives in, can be to avoid existing p-type contact zone and base shallow junction to form the base shallow junction for connecting the p-type contact zone
The phenomenon that emitter base open circuit for ultimately resulting in device, device failure can not be contacted, what production method of the present invention obtained
The reliability of bipolar transistor is higher.
【Description of the drawings】
To describe the technical solutions in the embodiments of the present invention more clearly, used in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the flow chart of the production method of bipolar transistor of the present invention.
Fig. 2-Fig. 7 is the structure diagram of each step of the production method of bipolar transistor shown in Fig. 1.
【Specific embodiment】
The technical solution in the embodiment of the present invention will be clearly and completely described below, it is clear that described implementation
Example is only the part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
All other embodiment that technical staff is obtained without making creative work belongs to the model that the present invention protects
It encloses.
- Fig. 7 is please referred to Fig.1, Fig. 1 is the flow chart of the production method of bipolar transistor of the present invention, and Fig. 2-Fig. 7 is Fig. 1 institutes
Show the structure diagram of each step of the production method of bipolar transistor.The production method of the bipolar transistor includes following step
Rapid S1-S7.
Step S1 referring to Fig. 2, providing P type substrate, forms n type buried layer, in the n type buried layer in the P type substrate
Upper formation N-type epitaxy layer forms through the N-type epitaxy layer and the n type buried layer and extends to isolating in the P type substrate
Groove forms through the N-type epitaxy layer and extends to the N traps in the n type buried layer and in the isolated groove, the N
Oxide layer and the opening through the oxide layer and the corresponding N-type epitaxy layer are formed on trap and the N-type epitaxy layer.
Step S2, referring to Fig. 3, p-type injection is done to the N-type epitaxy layer using the opening, so as to outside the N-type
Prolong layer surface and form p-type knot deeply.In the step S2, it is described injection ion include B ions, the Implantation Energy be 50kev, institute
15 powers of 15 powers to every square centimeter 5 that implantation dosage is every square centimeter 1 are stated, are tied deeply so as to the p-type formed
Depth is 0.5um.
Step S3, referring to Fig. 4, forming the p-type contact polysilicon being arranged on the p-type knot and oxide layer deeply and being located at
Spacer above the p-type contact polysilicon.The step S3 may comprise steps of：The p-type deeply knot and it is described
Polysilicon layer and separation layer are sequentially formed in oxide layer, the polysilicon layer and the separation layer are performed etching, so as to be formed
The p-type contact polysilicon and the spacer.
Step S4, referring to Fig. 5, doing N-type ion implanting to p-type knot deeply so that p-type knot deeply formed base with
And the p-type contact zone of the connection base.In the step S4, the injection ion includes BF2, P or As ion, the injection
Dosage is 13 powers of every square centimeter 2 13 powers to every square centimeter 5, and the depth of the base is 0.2um.
Step S5 drives in referring to Fig. 5, doing heat to the base, shallow to form the base of the connection p-type contact zone
Knot.
Step S6, referring to Fig. 6, contacting polysilicon and the spacer adjacent to the base shallow junction one side in the p-type
Isolation side walls are formed, emitter-polysilicon is formed on the base shallow junction.
Step S7, referring to Fig. 7, in the oxide layer, the spacer, the isolation side walls and the emitter polycrystalline
Buffer layer is formed on silicon, is isolated through the first through hole of the buffer layer and the oxide layer, through the medium
Layer and the spacer the second through hole, through the third through-hole of the buffer layer and on the buffer layer
Collector, base stage and emitter are formed, the collector connects the N traps by the first through hole, and the base stage passes through institute
It states the second through hole and connects the p-type contact polysilicon, the emitter connects the emitter polycrystalline by the third through-hole
Silicon.
Compared to the prior art, in the production method of bipolar transistor of the present invention, by the p-type deeply knot do N-type from
Son injection so that p-type knot deeply forms the p-type contact zone of base and the connection base；Further by the base
Area does heat and drives in, can be to avoid existing p-type contact zone and base shallow junction to form the base shallow junction for connecting the p-type contact zone
The phenomenon that emitter base open circuit for ultimately resulting in device, device failure can not be contacted, what production method of the present invention obtained
The reliability of bipolar transistor is higher.
Above-described is only embodiments of the present invention, it should be noted here that for those of ordinary skill in the art
For, without departing from the concept of the premise of the invention, improvement can also be made, but these belong to the protection model of the present invention
It encloses.
Claims (10)
1. a kind of production method of bipolar transistor, it is characterised in that：The production method comprises the following steps：
P type substrate is provided, n type buried layer is formed in the P type substrate, N-type epitaxy layer is formed on the n type buried layer, is formed
Through the N-type epitaxy layer and the n type buried layer and the isolated groove in the P type substrate is extended to, is formed through the N-type
Epitaxial layer simultaneously extends to the N traps in the n type buried layer and in the isolated groove, the N traps and the N-type epitaxy layer
Form oxide layer and the opening through the oxide layer and the corresponding N-type epitaxy layer；
P-type injection is done to the N-type epitaxy layer using the opening, is tied deeply so as to form p-type on the N-type epitaxy layer surface；
It forms the p-type contact polysilicon being arranged on the p-type knot and oxide layer deeply and is contacted positioned at the p-type above polysilicon
Spacer；
N-type ion implanting is done to p-type knot deeply so that p-type knot deeply forms base and the p-type of the connection base connects
Touch area；
Heat is done to the base to drive in, to form the base shallow junction for connecting the p-type contact zone.
2. the production method of bipolar transistor as described in claim 1, it is characterised in that：The production method further includes：
Polysilicon and the spacer are contacted in the p-type and forms isolation side walls adjacent to the base shallow junction one side, in the base
Emitter-polysilicon is formed on area's shallow junction；
Buffer layer is formed on the oxide layer, the spacer, the isolation side walls and the emitter-polysilicon, is passed through
It wears the first through hole of the buffer layer and the oxide layer, lead to through the second of the buffer layer and the spacer
Hole forms collector, base stage and transmitting through the third through-hole of the buffer layer and on the buffer layer
Pole, the collector connect the N traps by the first through hole, and the base stage connects the p-type by second through hole
Polysilicon is contacted, the emitter connects the emitter-polysilicon by the third through-hole.
3. the production method of bipolar transistor as described in claim 1, it is characterised in that：Using the opening to the N-type
Epitaxial layer was done in the step of p-type injection, and the injection ion includes B ions.
4. the production method of bipolar transistor as claimed in claim 3, it is characterised in that：The Implantation Energy is 50kev.
5. the production method of bipolar transistor as claimed in claim 4, it is characterised in that：The implantation dosage is every square li
15 powers of 15 powers to every square centimeter 5 of rice 1.
6. the production method of bipolar transistor as claimed in claim 5, it is characterised in that：The depth that the p-type is tied deeply is
0.5um。
7. the production method of bipolar transistor as described in claim 1, it is characterised in that：N-type ion is done to p-type knot deeply
In the step of injection, the injection ion includes BF2, P or As ion.
8. the production method of bipolar transistor as claimed in claim 7, it is characterised in that：The implantation dosage is every square li
13 powers of 13 powers to every square centimeter 5 of rice 2.
9. the production method of bipolar transistor as claimed in claim 8, it is characterised in that：The depth of the base is 0.2um.
10. the production method of bipolar transistor as described in claim 1, it is characterised in that：Formation is arranged at the p-type and ties deeply
And in oxide layer p-type contact polysilicon and positioned at the p-type contact polysilicon above spacer the step of include：Described
Polysilicon layer and separation layer are sequentially formed in p-type knot and the oxide layer deeply, the polysilicon layer and the separation layer are carried out
Etching, so as to form the p-type contact polysilicon and the spacer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711367161.4A CN108109914A (en) | 2017-12-18 | 2017-12-18 | The production method of bipolar transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711367161.4A CN108109914A (en) | 2017-12-18 | 2017-12-18 | The production method of bipolar transistor |
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| CN108109914A true CN108109914A (en) | 2018-06-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166800A (en) * | 2018-09-04 | 2019-01-08 | 深圳市诚朗科技有限公司 | A kind of transistor and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87100294A (en) * | 1986-01-30 | 1987-08-26 | 德克萨斯仪器公司 | A kind of polysilicon autoregistration bipolar device and manufacturing process thereof |
| CN1148271A (en) * | 1995-08-31 | 1997-04-23 | 日本电气株式会社 | Semiconductor device and method of mfg. the same |
| US6248650B1 (en) * | 1997-12-23 | 2001-06-19 | Texas Instruments Incorporated | Self-aligned BJT emitter contact |
-
2017
- 2017-12-18 CN CN201711367161.4A patent/CN108109914A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87100294A (en) * | 1986-01-30 | 1987-08-26 | 德克萨斯仪器公司 | A kind of polysilicon autoregistration bipolar device and manufacturing process thereof |
| CN1148271A (en) * | 1995-08-31 | 1997-04-23 | 日本电气株式会社 | Semiconductor device and method of mfg. the same |
| US6248650B1 (en) * | 1997-12-23 | 2001-06-19 | Texas Instruments Incorporated | Self-aligned BJT emitter contact |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166800A (en) * | 2018-09-04 | 2019-01-08 | 深圳市诚朗科技有限公司 | A kind of transistor and preparation method thereof |
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Application publication date: 20180601 |