CN108092629A - A kind of pulse width modulated power amplifier of resolution element - Google Patents
A kind of pulse width modulated power amplifier of resolution element Download PDFInfo
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- CN108092629A CN108092629A CN201611037418.5A CN201611037418A CN108092629A CN 108092629 A CN108092629 A CN 108092629A CN 201611037418 A CN201611037418 A CN 201611037418A CN 108092629 A CN108092629 A CN 108092629A
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- 230000005669 field effect Effects 0.000 claims abstract description 62
- 239000003990 capacitor Substances 0.000 claims abstract description 26
- 238000005070 sampling Methods 0.000 claims abstract description 11
- 238000007493 shaping process Methods 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 2
- 238000006085 Schmidt reaction Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of pulse width modulated power amplifier of resolution element, including：Six schmidt trigger phase inverter N1, six High voltage output phase inverter N2, six High voltage output phase inverter N3, divider resistance R3, divider resistance R4, divider resistance R5, divider resistance R6, sampling resistor R7, H bridge P-channel field-effect transistor (PEFT) pipe Q1 and H bridge N-channel field-effect tube Q2, further include：Diode D1, resistance R1, integrating capacitor C1, diode D2, resistance R2 and integrating capacitor C2.Level is V1 after six schmidt trigger phase inverter N1 shapings；When V1 is high level, there are one delay t1 between H bridge N-channel field-effect tube Q2 cut-offs are turned on H bridge P-channel field-effect transistor (PEFT) pipes Q1.When V1 is low level, there is delay t2 between H bridge P-channel field-effect transistor (PEFT) pipes Q1 cut-offs are turned on H bridge N-channel field-effect tube Q2.The present invention avoids generating excessive dash current, improves the reliability and application of circuit.
Description
Technical field
The present invention relates to a kind of power amplifiers, particularly a kind of pulse width modulated power amplifier of resolution element.
Background technology
The pulse width modulated power amplifier of resolution element has the features such as delivery efficiency is high, at low cost, should in missile-borne position marker
With extensive.
Traditional pulse width modulated power amplifier one side bridge arm of resolution element is by six schmidt trigger phase inverter N1, six High voltage outputs
Phase inverter N2, six High voltage output phase inverter N3, divider resistance R3, divider resistance R4, divider resistance R5, divider resistance R6, sampling
Resistance R7, H bridge P-channel field-effect transistor (PEFT) pipe Q1 and H bridge N-channel field-effect tube Q2 is formed.The pulse width modulated power amplifier of resolution element is used
To generate the control circuit for power conversion i.e. field-effect tube break-make of H bridges.In the control with the corresponding pulse modulated wave of input voltage
Under system, two groups of field-effect tube are alternately turned on and ended in turn.If input voltage changes, the duty cycle of pulse modulated wave occurs
Variation, the average voltage level for being added in armature both ends change, and the time length that two groups of field-effect tube are respectively turned on changes,
So as to achieve the purpose that speed governing.But when missile-borne position marker wide-angle is turned, traditional pulse width modulated power amplifier of resolution element can go out
Now with bridge arm field-effect tube simultaneously turn on so as to cause dash current it is excessive the problem of.
The content of the invention
Present invention aims at a kind of pulse width modulated power amplifier of resolution element is provided, traditional resolution element pulse tune is solved
Wide power amplifier it is possible that same bridge arm field-effect tube simultaneously turn on to lead to the problem of excessive dash current.
A kind of pulse width modulated power amplifier of resolution element shares identical both sides bridge arm, includes per one side bridge arm：Six apply it is close
Spy's triggering phase inverter N1, six High voltage output phase inverter N2, six High voltage output phase inverter N3, divider resistance R3, divider resistance R4, point
Piezoresistance R5, divider resistance R6, sampling resistor R7, H bridge P-channel field-effect transistor (PEFT) pipe Q1 and H bridge N-channel field-effect tube Q2, further include：
Diode D1, resistance R1, integrating capacitor C1, diode D2, resistance R2 and integrating capacitor C2.
The output of six schmidt trigger phase inverter N1 and the negative terminal of diode D1, the anode of diode D2, the one of resistance R1
End is connected with one end of resistance R2, and the anode of diode D1 and the other end of resistance R1, one end of integrating capacitor C1, six high pressures are defeated
Go out the input terminal connection of phase inverter N2, the other end ground connection of integrating capacitor C1, the negative terminal of diode D2 and the other end of resistance R2,
One end of integrating capacitor C2, the input terminal connection of six High voltage output phase inverter N3, the other end ground connection of integrating capacitor C2, six high pressures
The output terminal of output phase inverter N2 is connected with one end of divider resistance R4, the other end of divider resistance R4 and the one of divider resistance R3
End is connected with the grid of H bridge P-channel field-effect transistor (PEFT) pipes Q1, another termination power+27V of divider resistance R3, six High voltage output reverse phases
The output terminal of the device N3 grid with one end of divider resistance R5, one end of divider resistance R6 and H bridge N-channel field-effect tube Q2 respectively
Connection, the other end ground connection of divider resistance R6, another termination power+27V of divider resistance R5, H bridge P-channel field-effect transistor (PEFT) pipes Q1's
The source electrode that drain electrode meets power supply+27V, H bridge P-channel field-effect transistor (PEFT) pipe Q1 is connected with the drain electrode of H bridge N-channel field-effect tube Q2, and conduct
The output terminal of the pulse width modulated power amplifier of resolution element, the source electrode of H bridge N-channel field-effect tube Q2 connect with one end of sampling resistor R7
It connects, the other end ground connection of sampling resistor R7.
Level is V1 after six schmidt trigger phase inverter N1 shapings.V1, V2, V3 are Transistor-Transistor Logic level, and high level is+5V, low
Level is zero.When V1 is high level, diode D2 forward conductions, the level of V3 points rises to rapidly high level, and six high pressures are defeated
The output for going out phase inverter N3 is lower rapidly, and L2 is low level, and H bridges N-channel field-effect tube Q2 rapidly goes to end by turning on；Two poles
Pipe D1 reversely ends, and the RC delay circuit time constant of resistance R1 and integrating capacitor C1 compositions is t1, and the level of V2 points cannot
Rise at once, the level of elapsed time t1, V2 point is high level, and the output of six High voltage output phase inverter N2 is low level, is divided
Resistance R3 and divider resistance R4 partial pressures, there are one voltage drop, H bridge P-channel field-effect transistor (PEFT) pipes Q1 on the basis of+27V for the voltage of L1 points
Conducting.Therefore there are one delay t1 between H bridge N-channel field-effect tube Q2 cut-offs are turned on H bridge P-channel field-effect transistor (PEFT) pipes Q1.
When V1 is low level, diode D1 forward conductions, the level of V2 points rapidly goes to low level, and six High voltage outputs are anti-
Phase device N2 exports open collector, and L1 level rises to+27V at once, and H bridges P-channel field-effect transistor (PEFT) pipe Q1 rapidly goes to cut by turning on
Only；Diode D2 reversely ends, and the RC delay circuit time constant of resistance R2 and integrating capacitor C2 compositions is t2, the electricity of V3 points
Flat to decline at once, by the t2 times, the level of V3 points becomes low level, and six High voltage output phase inverter N3 output collectors are opened
Road, divider resistance R5, divider resistance R6 partial pressure, the current potential rise of L2 points, H bridge N-channel field-effect tube Q2 conductings.Therefore in H bridges P
There is delay t2 between being turned on H bridge N-channel field-effect tube Q2 in channel field-effect pipe Q1 cut-offs.
The present invention in the pulse width modulated power amplifier of traditional resolution element by adding diode D1, resistance R1, integration electricity
Hold C1, diode D2, resistance R2 and integrating capacitor C2, increase dead time, that reduces that same bridge arm field-effect tube simultaneously turns on can
Can, it avoids generating excessive dash current, improves the reliability and application of circuit.
Description of the drawings
A kind of pulse width modulated power amplifier structure diagram of resolution elements of Fig. 1；
A kind of pulse distribution sequence diagram of the pulse width modulated power amplifier of resolution elements of Fig. 2.
Specific embodiment
A kind of pulse width modulated power amplifier of resolution element shares identical both sides bridge arm, includes per one side bridge arm：Six apply it is close
Spy's triggering phase inverter N1, six High voltage output phase inverter N2, six High voltage output phase inverter N3, divider resistance R3, divider resistance R4, point
Piezoresistance R5, divider resistance R6, sampling resistor R7, H bridge P-channel field-effect transistor (PEFT) pipe Q1 and H bridge N-channel field-effect tube Q2, further include：
Diode D1, resistance R1, integrating capacitor C1, diode D2, resistance R2 and integrating capacitor C2.
The output of six schmidt trigger phase inverter N1 and the negative terminal of diode D1, the anode of diode D2, the one of resistance R1
End is connected with one end of resistance R2, and the anode of diode D1 and the other end of resistance R1, one end of integrating capacitor C1, six high pressures are defeated
Go out the input terminal connection of phase inverter N2, the other end ground connection of integrating capacitor C1, the negative terminal of diode D2 and the other end of resistance R2,
One end of integrating capacitor C2, the input terminal connection of six High voltage output phase inverter N3, the other end ground connection of integrating capacitor C2, six high pressures
The output terminal of output phase inverter N2 is connected with one end of divider resistance R4, the other end of divider resistance R4 and the one of divider resistance R3
End is connected with the grid of H bridge P-channel field-effect transistor (PEFT) pipes Q1, another termination power+27V of divider resistance R3, six High voltage output reverse phases
The output terminal of the device N3 grid with one end of divider resistance R5, one end of divider resistance R6 and H bridge N-channel field-effect tube Q2 respectively
Connection, the other end ground connection of divider resistance R6, another termination power+27V of divider resistance R5, H bridge P-channel field-effect transistor (PEFT) pipes Q1's
The source electrode that drain electrode meets power supply+27V, H bridge P-channel field-effect transistor (PEFT) pipe Q1 is connected with the drain electrode of H bridge N-channel field-effect tube Q2, and conduct
The output terminal of the pulse width modulated power amplifier of resolution element, the source electrode of H bridge N-channel field-effect tube Q2 connect with one end of sampling resistor R7
It connects, the other end ground connection of sampling resistor R7.
Level is V1 after six schmidt trigger phase inverter N1 shapings.V1, V2, V3 are Transistor-Transistor Logic level, and high level is+5V, low
Level is zero.When V1 is high level, diode D2 forward conductions, the level of V3 points rises to rapidly high level, and six high pressures are defeated
The output for going out phase inverter N3 is lower rapidly, and L2 is low level, and H bridges N-channel field-effect tube Q2 rapidly goes to end by turning on；Two poles
Pipe D1 reversely ends, and the RC delay circuit time constant of resistance R1 and integrating capacitor C1 compositions is t1, and the level of V2 points cannot
Rise at once, the level of elapsed time t1, V2 point is high level, and the output of six High voltage output phase inverter N2 is low level, is divided
Resistance R3 and divider resistance R4 partial pressures, there are one voltage drop, H bridge P-channel field-effect transistor (PEFT) pipes Q1 on the basis of+27V for the voltage of L1 points
Conducting.Therefore there are one delay t1 between H bridge N-channel field-effect tube Q2 cut-offs are turned on H bridge P-channel field-effect transistor (PEFT) pipes Q1.
When V1 is low level, diode D1 forward conductions, the level of V2 points rapidly goes to low level, and six High voltage outputs are anti-
Phase device N2 exports open collector, and L1 level rises to+27V at once, and H bridges P-channel field-effect transistor (PEFT) pipe Q1 rapidly goes to cut by turning on
Only；Diode D2 reversely ends, and the RC delay circuit time constant of resistance R2 and integrating capacitor C2 compositions is t2, the electricity of V3 points
Flat to decline at once, by the t2 times, the level of V3 points becomes low level, and six High voltage output phase inverter N3 output collectors are opened
Road, divider resistance R5, divider resistance R6 partial pressure, the current potential rise of L2 points, H bridge N-channel field-effect tube Q2 conductings.Therefore in H bridges P
There is delay t2 between being turned on H bridge N-channel field-effect tube Q2 in channel field-effect pipe Q1 cut-offs.
Claims (1)
1. a kind of pulse width modulated power amplifier of resolution element shares identical both sides bridge arm, include per one side bridge arm：Six Schmidts
Trigger phase inverter N1, six High voltage output phase inverter N2, six High voltage output phase inverter N3, divider resistance R3, divider resistance R4, partial pressure
Resistance R5, divider resistance R6, sampling resistor R7, H bridge P-channel field-effect transistor (PEFT) pipe Q1 and H bridge N-channel field-effect tube Q2, feature exist
In further including：Diode D1, resistance R1, integrating capacitor C1, diode D2, resistance R2 and integrating capacitor C2；
The output of six schmidt trigger phase inverter N1 and the negative terminal of diode D1, the anode of diode D2, resistance R1 one end and
One end connection of resistance R2, the anode of diode D1 and the other end of resistance R1, one end of integrating capacitor C1, six High voltage outputs are anti-
The input terminal connection of phase device N2, the other end ground connection of integrating capacitor C1, the negative terminal of diode D2 and the other end of resistance R2, integration
One end of capacitance C2, the input terminal connection of six High voltage output phase inverter N3, the other end ground connection of integrating capacitor C2, six High voltage outputs
The output terminal of phase inverter N2 is connected with one end of divider resistance R4, the other end of divider resistance R4 and one end of divider resistance R3 and
The grid connection of H bridge P-channel field-effect transistor (PEFT) pipes Q1, another termination power+27V of divider resistance R3, six High voltage output phase inverter N3
Output terminal respectively with the grid of one end of divider resistance R5, one end of divider resistance R6 and H bridge N-channel field-effect tube Q2 connect
It connects, the other end ground connection of divider resistance R6, another termination power+27V of divider resistance R5, the leakage of H bridge P-channel field-effect transistor (PEFT) pipes Q1
The source electrode that pole meets power supply+27V, H bridge P-channel field-effect transistor (PEFT) pipe Q1 is connected with the drain electrode of H bridge N-channel field-effect tube Q2, and is used as and is divided
Output terminal from the pulse width modulated power amplifier of element, the source electrode of H bridge N-channel field-effect tube Q2 connect with one end of sampling resistor R7
It connects, the other end ground connection of sampling resistor R7；
Level is V1 after six schmidt trigger phase inverter N1 shapings；V1, V2, V3 are Transistor-Transistor Logic level, and high level is+5V, low level
It is zero；When V1 is high level, diode D2 forward conductions, the level of V3 points rises to rapidly high level, and six High voltage outputs are anti-
The output of phase device N3 is lower rapidly, and L2 is low level, and H bridges N-channel field-effect tube Q2 rapidly goes to end by turning on；Diode D1
The RC delay circuit time constant of reversely cut-off, resistance R1 and integrating capacitor C1 compositions is t1, and the level of V2 points cannot be at once
Rise, the level of elapsed time t1, V2 point is high level, and the output of six High voltage output phase inverter N2 is low level, divider resistance
R3 and divider resistance R4 partial pressures, there are one voltage drop, H bridge P-channel field-effect transistor (PEFT) pipes Q1 conductings on the basis of+27V for the voltage of L1 points；
Therefore there are one delay t1 between H bridge N-channel field-effect tube Q2 cut-offs are turned on H bridge P-channel field-effect transistor (PEFT) pipes Q1；
When V1 is low level, diode D1 forward conductions, the level of V2 points rapidly goes to low level, six High voltage output phase inverters
N2 exports open collector, and L1 level rises to+27V at once, and H bridges P-channel field-effect transistor (PEFT) pipe Q1 rapidly goes to end by turning on；
Diode D2 reversely ends, and the RC delay circuit time constant of resistance R2 and integrating capacitor C2 compositions is t2, the level of V3 points
It cannot decline at once, by the t2 times, the level of V3 points becomes low level, and six High voltage output phase inverter N3 output collectors are opened
Road, divider resistance R5, divider resistance R6 partial pressure, the current potential rise of L2 points, H bridge N-channel field-effect tube Q2 conductings；Therefore in H bridges P
There is delay t2 between being turned on H bridge N-channel field-effect tube Q2 in channel field-effect pipe Q1 cut-offs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611037418.5A CN108092629A (en) | 2016-11-23 | 2016-11-23 | A kind of pulse width modulated power amplifier of resolution element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611037418.5A CN108092629A (en) | 2016-11-23 | 2016-11-23 | A kind of pulse width modulated power amplifier of resolution element |
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| CN108092629A true CN108092629A (en) | 2018-05-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611037418.5A Pending CN108092629A (en) | 2016-11-23 | 2016-11-23 | A kind of pulse width modulated power amplifier of resolution element |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08322288A (en) * | 1995-05-25 | 1996-12-03 | Fuji Heavy Ind Ltd | Motor driver |
| CN201266905Y (en) * | 2008-06-26 | 2009-07-01 | 吴磊 | One-drawing-two control system of industry frequency changer based on digital signal processor |
| CN102624209A (en) * | 2012-03-23 | 2012-08-01 | 电子科技大学 | Voltage-reduction-type converter control device |
-
2016
- 2016-11-23 CN CN201611037418.5A patent/CN108092629A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08322288A (en) * | 1995-05-25 | 1996-12-03 | Fuji Heavy Ind Ltd | Motor driver |
| CN201266905Y (en) * | 2008-06-26 | 2009-07-01 | 吴磊 | One-drawing-two control system of industry frequency changer based on digital signal processor |
| CN102624209A (en) * | 2012-03-23 | 2012-08-01 | 电子科技大学 | Voltage-reduction-type converter control device |
Non-Patent Citations (2)
| Title |
|---|
| 《中国集成电路大全》编委会: "《电力电子技术与运动控制系统》", 30 December 1995, 北京：国防工业出版社 * |
| 刘德胜: "《计算机控制技术》", 31 August 2016, 沈阳：东北大学出版社 * |
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Application publication date: 20180529 |