CN108091716A - A kind of solar double-glass assemblies - Google Patents
A kind of solar double-glass assemblies Download PDFInfo
- Publication number
- CN108091716A CN108091716A CN201711309908.0A CN201711309908A CN108091716A CN 108091716 A CN108091716 A CN 108091716A CN 201711309908 A CN201711309908 A CN 201711309908A CN 108091716 A CN108091716 A CN 108091716A
- Authority
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- China
- Prior art keywords
- glass
- solar double
- thickness
- black silicon
- glass assemblies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title claims abstract description 99
- 230000000712 assembly Effects 0.000 title claims abstract description 46
- 238000000429 assembly Methods 0.000 title claims abstract description 46
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000001020 plasma etching Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
This application discloses a kind of solar double-glass assemblies, including back glass, the top of the back glass is connected with the black silicon cell of tandem using the first encapsulated layer, the top of the black silicon cell is connected with face glass using the second encapsulated layer, the black silicon cell draws anode and cathode by wire box, wherein, the thickness of the face glass is not more than 2.0mm.Above-mentioned solar double-glass assemblies, can on the basis of production cost is reduced lifting assembly short-wave band the efficiency of light energy utilization, so as to improve the overall power of same version type component.
Description
Technical field
The invention belongs to photovoltaic apparatus technical field, more particularly to a kind of solar double-glass assemblies.
Background technology
With the high speed development of photovoltaic module, the power of cost declining and lifting assembly is all photovoltaic enterprises and entire row
The developing direction of industry, therefore this angle drops from cell piece, mortar cutting silicon heavy stone used as an anchor is all being changed to Buddha's warrior attendant wire cutting by each producer, together
When reduce the cost of photovoltaic main material to arrange in pairs or groups black silicon technology or purely reduce silver paste using the grid line structure for changing cell piece
Dosage is expected to reduce the manufacture cost of battery；From glass cost angle, reducing the thickness of glass can be promoted primarily to dropping
The cost of low photovoltaic group valency, such as, on the premise of the technique difference without considering glass, by the face glass of 2.5mm thickness
2.0mm is reduced to, the cost of raw material of glass can will decline 1/5, and in terms of reducing thickness of glass at present, mainly from 4mm thickness
Be reduced to 3.2mm even 2.5mm.
Black silicon technology can promote absorbability of the cell piece in short-wave band, but thicker glass is by the exhausted of incidence
Most of short-wave band all sponges, under the premise of the thickness of the 2.5mm glass being commonly used does not change, same efficiency it is black
The efficiency of the assembly end of silicon and Fei Hei silion cells changes less, and the simple of thickness of glass reduces the cost that can reduce raw material,
But the similary unobvious of power synergy of the low short-wave band light utilization, actually assembly end for non-black silion cell.
The content of the invention
To solve the above problems, the present invention provides a kind of solar double-glass assemblies, can be carried on the basis of production cost is reduced
The efficiency of light energy utilization of the component in short-wave band is risen, so as to improve the overall power of same version type component.
A kind of solar double-glass assemblies provided by the invention, including back glass, the top of the back glass utilizes the first encapsulation
Layer is connected with the black silicon cell of tandem, and the top of the black silicon cell is connected with face glass using the second encapsulated layer,
The black silicon cell draws anode and cathode by wire box, wherein, the thickness of the face glass is not more than 2.0mm.
Preferably, in above-mentioned solar double-glass assemblies, the thickness of the face glass is 1.6mm to 2.0mm.
Preferably, in above-mentioned solar double-glass assemblies, the black silicon cell carried out reactive ion etching or metal for surface
The silicon chip of ion etching.
Preferably, in above-mentioned solar double-glass assemblies, the silicon chip is silicon wafer cut by diamond wire.
Preferably, in above-mentioned solar double-glass assemblies, the thickness of the back glass is not less than 2.0mm.
Preferably, in above-mentioned solar double-glass assemblies, the thickness of the back glass is 2.0mm or 2.5mm.
Preferably, in above-mentioned solar double-glass assemblies, the thickness of the black silicon cell is 0.18 to 0.2mm.
Preferably, in above-mentioned solar double-glass assemblies, the thickness of first encapsulated layer and second encapsulated layer is
0.5mm。
By foregoing description, above-mentioned a kind of solar double-glass assemblies provided by the invention, due to including back glass, the back of the body
The top of surface glass is connected with the black silicon cell of tandem using the first encapsulated layer, and the top of the black silicon cell utilizes the
Two encapsulated layers are connected with face glass, and the black silicon cell draws anode and cathode by wire box, wherein, the face glass
Thickness be not more than 2.0mm, therefore can on the basis of production cost is reduced lifting assembly short-wave band the efficiency of light energy utilization, from
And improve the overall power with version type component.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the sectional view of the first solar double-glass assemblies provided by the embodiments of the present application；
Fig. 2 is the front elevation of the first solar double-glass assemblies provided by the embodiments of the present application；
Fig. 3 is the back view of the first solar double-glass assemblies provided by the embodiments of the present application.
Specific embodiment
The present invention core concept be to provide a kind of solar double-glass assemblies, can on the basis of production cost is reduced promotion group
Part short-wave band the efficiency of light energy utilization, so as to improve the overall power of same version type component.
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
As shown in Figure 1, Figure 2 and Figure 3, Fig. 1 is the embodiment of the present application to the first solar double-glass assemblies provided by the embodiments of the present application
The sectional view of the first solar double-glass assemblies provided, Fig. 2 are the front elevation of the first solar double-glass assemblies provided by the embodiments of the present application, are schemed
3 be the back view of the first solar double-glass assemblies provided by the embodiments of the present application, which includes back glass 1, the back side
The top of glass 1 is connected with the black silicon cell 3 of tandem using the first encapsulated layer 2, these black silicon cells 3 are such as Fig. 2 institutes
It is connected in series as showing using snakelike form, the top of the black silicon cell 3 is connected with using the second encapsulated layer 4
Face glass 5, the black silicon cell 3 draw anode and cathode by wire box 6, and wire box 6 mentioned here is as shown in figure 3, realize
The connection of battery and other equipment, these layers are packaged together using laminating machine, wherein, the thickness of the face glass 5 is little
In 2.0mm.
It should be noted that in the visible light wave range of 370-590nm, black silicon cell has than conventional non-black silicon cell
There is higher utilization rate, and by testing the glass of 2.0mm and 2.5mm it can be found that the visible ray of the glass of 2.0mm thickness
Partial transmitance higher, due to be more than wavelength 590nm light crystal-silicon battery slice external quantum efficiency already close to 95%, and ripple
It is long low less than the light wave conventional batteries piece utilization rate of 590nm, in the present embodiment, glass of the thickness no more than 2.0mm is carried
Black silicon cell, glass can be hacked the anti-reflection part of 350-590nm silicon utilization, can realize to the significantly more efficient profit of light
With improving the transfer efficiency of battery.
By foregoing description, the first solar double-glass assemblies provided by the embodiments of the present application, due to including back glass, institute
The top for stating back glass is connected with the black silicon cell of tandem, the top profit of the black silicon cell using the first encapsulated layer
Face glass is connected with the second encapsulated layer, the black silicon cell draws anode and cathode by wire box, wherein, the front glass
The thickness of glass be not more than 2.0mm, therefore can on the basis of production cost is reduced lifting assembly in the light-use of short-wave band
Rate, so as to improve the overall power of same version type component.
Second of solar double-glass assemblies provided by the embodiments of the present application are on the basis of the first above-mentioned solar double-glass assemblies, also wrap
Include following technical characteristic：
The thickness of the face glass is 1.6mm to 2.0mm.
As long as it should be noted that the thickness of the face glass is arranged to 2.0mm and following, it becomes possible to ensure that it has
Sufficiently high visible light transmittance, especially 350-590nm, and the thickness value had better not be less than 1.6mm, since it is desired that ensureing
It possesses anti-snow load and wind load capacity, is unlikely to rupture with sufficiently high intensity.
The third solar double-glass assemblies provided by the embodiments of the present application are on the basis of the first above-mentioned solar double-glass assemblies, also wrap
Include following technical characteristic：
The black silicon cell carried out the silicon chip of reactive ion etching or metal ion etching for surface.
Specifically, reaction gas (such as CF in reactive ion etching (Reactive Ion Etching, RIE)4) in RF or
Be excited decomposition in DC electric field, generates active particle (such as free F atom), the substance of active particle and silicon chip surface is anti-
Should, volatile materials is generated, then volatile materials is excluded into reaction chamber with aspiration pump；Or it is etched using metal ion
The black silicon face that (Metal ion Catalysis Etching) fabrication techniques go out can capture almost all daylight, can absorb
Visible ray and part near infrared ray, improve the service efficiency of light, the electric current of generation compared with high more than the 100mA of traditional silicon materials,
In addition, black silicon can also reduce the silicon usage amount of optical sensor, make product cheaper, compact and light.
4th kind of solar double-glass assemblies provided by the embodiments of the present application, are on the basis of the third above-mentioned solar double-glass assemblies, also wrap
Include following technical characteristic：
The silicon chip is silicon wafer cut by diamond wire.
This line cutting technology section is cut using diamond wire, the advantage is that cutting speed is fast, and production capacity is improved,
It is and more environmentally-friendly.
5th kind of solar double-glass assemblies provided by the embodiments of the present application, be it is above-mentioned the first into the 4th kind of solar double-glass assemblies it is any
On the basis of kind, following technical characteristic is further included：
The thickness of the back glass is not less than 2.0mm.
It should be noted that this back glass must have sufficiently large thickness, during just can guarantee its use
Reliability is not easy to rupture, moreover even if absorbing properties will not be improved by reducing its thickness.
6th kind of solar double-glass assemblies provided by the embodiments of the present application are on the basis of above-mentioned 5th kind of solar double-glass assemblies, also wrap
Include following technical characteristic：
The thickness of the back glass is 2.0mm or 2.5mm.
This is two kinds of common specifications of back glass, is easily obtained and cost is relatively low.
7th kind of solar double-glass assemblies provided by the embodiments of the present application are on the basis of above-mentioned 6th kind of solar double-glass assemblies, also wrap
Include following technical characteristic：
The thickness of the black silicon cell is 0.18 to 0.2mm.
It should be noted that this thickness can make black silicon cell have enough intensity, cost of manufacture is also beneficial to
Control.
8th kind of solar double-glass assemblies provided by the embodiments of the present application are on the basis of above-mentioned 7th kind of solar double-glass assemblies, also wrap
Include following technical characteristic：
The thickness of first encapsulated layer and second encapsulated layer is 0.5mm.
The first encapsulated layer and the second encapsulated layer of this thickness can ensure black silicon cell and face glass and back side glass
Effective connection of glass, is less prone to gap, and cost is relatively low.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (8)
1. a kind of solar double-glass assemblies, which is characterized in that including back glass, the top of the back glass is connected using the first encapsulated layer
The black silicon cell of tandem is connected to, the top of the black silicon cell is connected with face glass using the second encapsulated layer, described
Black silicon cell draws anode and cathode by wire box, wherein, the thickness of the face glass is not more than 2.0mm.
2. solar double-glass assemblies according to claim 1, which is characterized in that the thickness of the face glass for 1.6mm extremely
2.0mm。
3. solar double-glass assemblies according to claim 1, which is characterized in that the black silicon cell for surface react from
The silicon chip of son etching or metal ion etching.
4. solar double-glass assemblies according to claim 3, which is characterized in that the silicon chip is silicon wafer cut by diamond wire.
5. according to claim 1-4 any one of them solar double-glass assemblies, which is characterized in that the thickness of the back glass is not less than
2.0mm。
6. solar double-glass assemblies according to claim 5, which is characterized in that the thickness of the back glass for 2.0mm or
2.5mm。
7. solar double-glass assemblies according to claim 6, which is characterized in that the thickness of the black silicon cell for 0.18mm extremely
0.2mm。
8. solar double-glass assemblies according to claim 7, which is characterized in that first encapsulated layer and second encapsulated layer
Thickness is 0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711309908.0A CN108091716B (en) | 2017-12-11 | 2017-12-11 | A kind of solar double-glass assemblies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711309908.0A CN108091716B (en) | 2017-12-11 | 2017-12-11 | A kind of solar double-glass assemblies |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108091716A true CN108091716A (en) | 2018-05-29 |
| CN108091716B CN108091716B (en) | 2019-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711309908.0A Active CN108091716B (en) | 2017-12-11 | 2017-12-11 | A kind of solar double-glass assemblies |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966752A (en) * | 2015-04-17 | 2015-10-07 | 詹兴华 | High-electric energy production crystalline silicon solar cell assembly and manufacturing technology thereof |
| CN105576055A (en) * | 2016-02-24 | 2016-05-11 | 常州亚玛顿股份有限公司 | Double-glass light transmission assembly |
| CN205452307U (en) * | 2015-12-25 | 2016-08-10 | 合肥晶澳太阳能科技有限公司 | Packaging structure of black silicon solar cell piece |
-
2017
- 2017-12-11 CN CN201711309908.0A patent/CN108091716B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966752A (en) * | 2015-04-17 | 2015-10-07 | 詹兴华 | High-electric energy production crystalline silicon solar cell assembly and manufacturing technology thereof |
| CN205452307U (en) * | 2015-12-25 | 2016-08-10 | 合肥晶澳太阳能科技有限公司 | Packaging structure of black silicon solar cell piece |
| CN105576055A (en) * | 2016-02-24 | 2016-05-11 | 常州亚玛顿股份有限公司 | Double-glass light transmission assembly |
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| Publication number | Publication date |
|---|---|
| CN108091716B (en) | 2019-05-07 |
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Effective date of registration: 20201228 Address after: 334000 No.1 Jingke Avenue, Shangrao economic and Technological Development Zone, Shangrao City, Jiangxi Province Patentee after: Jingke energy (Shangrao) Co.,Ltd. Patentee after: JINKO SOLAR HOLDING Co.,Ltd. Patentee after: JINKO SOLAR Co.,Ltd. Address before: 314416 Yuanxi Road, Yuanhua Town, Haining, Jiaxing, Zhejiang 58 Patentee before: JINKO SOLAR HOLDING Co.,Ltd. Patentee before: JINKO SOLAR Co.,Ltd. |
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