CN108091561B - Uniform layer removing method for aluminum process chip - Google Patents
Uniform layer removing method for aluminum process chip Download PDFInfo
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- CN108091561B CN108091561B CN201711375704.7A CN201711375704A CN108091561B CN 108091561 B CN108091561 B CN 108091561B CN 201711375704 A CN201711375704 A CN 201711375704A CN 108091561 B CN108091561 B CN 108091561B
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- layer
- etching
- barrier layer
- metal wiring
- thickness
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- 238000000034 method Methods 0.000 title claims abstract description 64
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 99
- 230000004888 barrier function Effects 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 238000000227 grinding Methods 0.000 claims abstract description 38
- 230000000694 effects Effects 0.000 abstract description 19
- 238000005498 polishing Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 239000007789 gas Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010669 acid-base reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711375704.7A CN108091561B (en) | 2017-12-19 | 2017-12-19 | Uniform layer removing method for aluminum process chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711375704.7A CN108091561B (en) | 2017-12-19 | 2017-12-19 | Uniform layer removing method for aluminum process chip |
Publications (2)
Publication Number | Publication Date |
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CN108091561A CN108091561A (en) | 2018-05-29 |
CN108091561B true CN108091561B (en) | 2020-02-07 |
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CN201711375704.7A Active CN108091561B (en) | 2017-12-19 | 2017-12-19 | Uniform layer removing method for aluminum process chip |
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CN (1) | CN108091561B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114813808B (en) * | 2022-04-24 | 2023-03-28 | 胜科纳米(苏州)股份有限公司 | Method for detecting cross-sectional structure of semiconductor chip |
CN115101473B (en) * | 2022-08-29 | 2024-01-26 | 成都探芯科技有限公司 | Delayering method for aluminum through hole chip |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5926688A (en) * | 1997-07-25 | 1999-07-20 | United Microelectronics Corporation | Method of removing thin film layers of a semiconductor component |
TW501212B (en) * | 2000-11-14 | 2002-09-01 | Vanguard Int Semiconduct Corp | Failure analysis method of metal delayer |
CN102253325A (en) * | 2010-05-21 | 2011-11-23 | 中芯国际集成电路制造(上海)有限公司 | Method for analyzing chip failure |
CN103499476A (en) * | 2013-09-30 | 2014-01-08 | 上海华力微电子有限公司 | Method for removing layers in chip failure analysis process |
CN104020408A (en) * | 2014-05-26 | 2014-09-03 | 武汉新芯集成电路制造有限公司 | Memory chip bit line failure analyzing method |
CN104241156A (en) * | 2014-08-21 | 2014-12-24 | 武汉新芯集成电路制造有限公司 | Method for analyzing defects |
CN105047557A (en) * | 2015-09-10 | 2015-11-11 | 宜特(上海)检测技术有限公司 | High-order chip failure physical de-layering analysis method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002026091A (en) * | 2000-07-11 | 2002-01-25 | Nec Corp | Method for analyzing failure of semiconductor device |
US10497633B2 (en) * | 2013-02-06 | 2019-12-03 | The Board Of Trustees Of The University Of Illinois | Stretchable electronic systems with fluid containment |
TWM501212U (en) * | 2014-11-21 | 2015-05-21 | Liang shi feng | Temperature control valve |
-
2017
- 2017-12-19 CN CN201711375704.7A patent/CN108091561B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5926688A (en) * | 1997-07-25 | 1999-07-20 | United Microelectronics Corporation | Method of removing thin film layers of a semiconductor component |
TW501212B (en) * | 2000-11-14 | 2002-09-01 | Vanguard Int Semiconduct Corp | Failure analysis method of metal delayer |
CN102253325A (en) * | 2010-05-21 | 2011-11-23 | 中芯国际集成电路制造(上海)有限公司 | Method for analyzing chip failure |
CN103499476A (en) * | 2013-09-30 | 2014-01-08 | 上海华力微电子有限公司 | Method for removing layers in chip failure analysis process |
CN104020408A (en) * | 2014-05-26 | 2014-09-03 | 武汉新芯集成电路制造有限公司 | Memory chip bit line failure analyzing method |
CN104241156A (en) * | 2014-08-21 | 2014-12-24 | 武汉新芯集成电路制造有限公司 | Method for analyzing defects |
CN105047557A (en) * | 2015-09-10 | 2015-11-11 | 宜特(上海)检测技术有限公司 | High-order chip failure physical de-layering analysis method |
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CN108091561A (en) | 2018-05-29 |
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CP01 | Change in the name or title of a patent holder |
Address after: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Patentee after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee after: STATE GRID CORPORATION OF CHINA Address before: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Patentee before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee before: State Grid Corporation of China |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210118 Address after: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Patentee after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: Beijing core Kejian Technology Co.,Ltd. Patentee after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee after: STATE GRID CORPORATION OF CHINA Address before: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Patentee before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee before: STATE GRID CORPORATION OF CHINA |
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TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: 102200 1st floor, building 11, Zhongke Yungu garden, No. 79, Shuangying West Road, Changping District, Beijing Patentee after: Beijing core Kejian Technology Co.,Ltd. Patentee after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee after: STATE GRID CORPORATION OF CHINA Address before: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Patentee before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: Beijing core Kejian Technology Co.,Ltd. Patentee before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee before: STATE GRID CORPORATION OF CHINA |
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CP03 | Change of name, title or address |