CN108089409B - A kind of large area super resolution lithography device - Google Patents
A kind of large area super resolution lithography device Download PDFInfo
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- CN108089409B CN108089409B CN201711346477.5A CN201711346477A CN108089409B CN 108089409 B CN108089409 B CN 108089409B CN 201711346477 A CN201711346477 A CN 201711346477A CN 108089409 B CN108089409 B CN 108089409B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
Abstract
The invention discloses a kind of large area super resolution lithography devices, belong to the technical field of super resolution lithography equipment.The device includes vibrating isolation foundation, Active Vibration Isolation Platform, main substrate, uv-exposure light source, clearance detecting system, alignment modules, super resolution lithography lens module, work stage module, laser interferometry system, ultraprecise environmental control system and control system.The equipment realizes the online gap detection of nanometer scale precision by interference technique；By precision leveling and gap control technology, tens nanometer scale gap photoetching functions are realized；By wafer-supporting platform part gas control technology, large area super-resolution stepping photoetching function is realized.
Description
Technical field
The invention belongs to the technical fields of lithographic equipment, and in particular to a kind of large area super resolution lithography device.
Background technique
The technology for being currently used in micro-nano structure showing methods mainly has: close to contact photoetching technique, projection lithography technology, receiving
Rice stamping technique and direct electronic beam writing technology etc..
Contact photolithography technology is traditional optical lithography mode, be by the good mask of pre-production directly and be coated with light
The silicon wafer of photoresist carries out contact exposure.Contact photolithography technology have resolving power is high, equipment be simple and convenient to operate with it is at low cost etc.
Advantage；But its fatal disadvantage is that mask and photoresist directly contact, it is easy to damage and stained mask, thus mask
Service life is short, and the yield rate that will seriously affect chip is used for multiple times.Proximity lithography technology is in order to avoid contact photolithography
Defect caused by technology is exposed in the case where having certain interval between mask and photoresist.This mode can be kept away
Exempt to stain and damage mask, but diffraction effect can be such that resolving power reduces.Its resolving power empirical equation are as follows:In formula,
K is a constant for indicating photoresist treatment process；λ indicates exposure wavelength；H indicates the gap between mask and photoresist.
Projection lithography technology is using the principle of optical projection imaging, by projection objective by large-scale integrated on mask
Circuitous pattern is imaged on gluing silicon wafer and realizes pattern transfer.Projection lithography technology can obtain the resolution of contact photolithography technology
Power, and the drawbacks of the formula photoetching technique of avoiding contact with is easy to damage and stains mask.Projection lithography technology has been answered extensively at present
For in IC industrial production, but in view of its equipment cost height, it is rarely applied to the function element micro-nano structure processing of small lot.
Nanometer embossing is that will have the complex figure of nanostructure by the methods of electron beam lithography system on template,
Use the means such as mechanical force that figure is replicated on the silicon wafer for being coated with polymeric photoresist in a manner of equal proportion again.Nano impression
Its resolving power is solely dependent upon the characteristic size of template graphics without being limited by optical diffraction limit, therefore its resolving power is very high, mesh
The preceding technology is able to achieve the resolving power of 5nm.Nanometer embossing has many advantages, such as that speed is fast, at low cost, primary high-precision mould
Tool production can multiple copies figure.But there is also certain technical thresholds for current nano impression, since nano impression is
The adherency of photoresist is be easy to cause when the structure graph on template being pressed into photoresist by mechanical force, therefore being demoulded.Simultaneously
Have a biggish dependence to used pressure etc. in nanoimprinting process, thus nanoimprinting technology nano-photon crystal,
Application in Meta Materials and biology is prepared from template and is imprinted in the angle of difficulty, realizes large area, across scale coining
Difficulty it is higher.There is also bigger difficulty for the set lithography of nano impression simultaneously, therefore at present to the research of nano impression
Still it is only limitted to laboratory research, is rarely used in IC manufacturing.
Electron-beam direct writing equipment has become several nanometers and processes most common technological means to tens nanometer level ultra, but
It is its commercial applications or there is very big obstruction, main cause has: first is that high cost of equipment；Second is that using straight
The mode write carries out micro-nano structure processing, and processing efficiency is very low, is difficult to realize the processing procedure of large-area nano pattern.Electron beam is straight
Write device cannot achieve the demand of efficient, inexpensive and large area micro-nano structure processing, thus greatly reduces its industrialization and answer
With value, it is even more impossible to apply in large-scale industrial production.
It is well known that the main machining method of nano graph is photoetching at present, but the route of conventional lithography is again by " spreading out
The limitation of emitter-base bandgap grading limit ".For this purpose, the processing method that researcher proposes surface plasma super resolution lithography, to break through diffraction pole
Limit improves photolithography resolution.Surface plasma (Surface Plasmon, SP) is by photon-driven metallic conductor surface
Free electron coherence resonance is strapped in metal interface, the spy of electron density wave and electromagnetic wave energy coupled transfer to be formed
Different wave.Short wavelength's characteristic of SP effectively can realize evanescent wave in the evanescent wave of body surface by resonance coupling local
Amplification transmission, resonance interference method and local enhancement, to obtain the figure more than traditional optical diffraction limit, here it is SP oversubscription
Distinguish photoetching technique.Compared with mentioned-above several micro-nano structure showing methods technologies, SP super resolution lithography technology has following
Several big advantages: (1) diffraction limit is broken through, high-resolution micro-nano structure figure can be processed, 32nm line can be processed at present
Wide structure graph；(2) single exposure area is big, up to 10mm × 10mm, while being able to carry out stepping, alignment processing, and compatible 1
It is processed to 4 inches of prints, it is high-efficient, adaptable；(3) equipment cost needed for is low, is able to carry out across scale feature figure
Processing.
2004, Luo Xiangang researcher reported surface plasma body resonant vibration interference photoetching technology for the first time, proposed SP photoetching
Processing method improves photolithography resolution to break through diffraction limited.But the photoetching technique is as near field photolithography mode, and there is works
Make away from it is short the deficiencies of, usually required in exposure by blowing pressurization and vacuum such as sucks at the modes, to guarantee working distance.But it should
Technology pattern easily pollutes substrate, destroys mask graph, or even damage mask, limits the recycling of exposure mask, this serious shadow
The quality and efficiency for having rung exposure, improve the cost of exposure.Studies have shown that illumination is excited by off-axis SP, it can be effective
Raising working distance and resolution ratio.Off-axis SP excitation illumination is so that the working distance of photoetching has been increased to hundred nanometer scales, still
How gap is accurately detected and controlled, guarantees that the reliable and stable of lithographic results becomes new technical problem.Capacitance sensor is
Using most common gap detection detector, electrode is embedded in usually in exposure mask and substrate surface and forms parallel plate capacitor, although
Structure is simply easy to accomplish, but exposure mask substrate is restricted, and also will receive influence in exposure process, and thermal drift effects are also very bright
It is aobvious.
A kind of large area super resolution lithography device of the invention.The device realizes nanometer amount by white light interference technique
The online gap detection of class precision；The equipment realizes tens nanometer scale gaps by accurate leveling and gap control technology
Photoetching function；The equipment realizes large area super-resolution stepping photoetching function by wafer-supporting platform part gas control technology.
Summary of the invention
The technical problem to be solved in the invention is: proposing a kind of large area super resolution lithography device.The device passes through white
Optical interference techniques realize the online gap detection of nanometer scale precision；By precision leveling and gap control technology, realize
Tens nanometer scale gap photoetching functions；By wafer-supporting platform part gas control technology, large area super-resolution stepping photoetching function is realized
Energy.
The present invention solve above-mentioned technical problem the technical solution adopted is that:
A kind of large area super resolution lithography device, which includes vibrating isolation foundation, Active Vibration Isolation Platform, main substrate, ultraviolet
Exposure light source, clearance detecting system, alignment modules, super resolution lithography lens module, work stage module, six-axis laser interferometry
System, ultraprecise environmental control system and control system.Wherein uv-exposure light source, clearance detecting system, alignment modules, super-resolution light
It carves lens module and six-axis laser interferometer measuration system is all mounted on main substrate, main substrate is mounted on Active Vibration Isolation Platform,
Active Vibration Isolation Platform is mounted on vibrating isolation foundation, and whole equipment is mounted in ultraprecise environmental control system, and control system is mounted on super
On vibrating isolation foundation outside accurate environmental control system.
Wherein, the clearance detecting system includes three sets of identical detection modules altogether, and detection module includes spectrometer, light
Spectrometer light source, optical fiber, probe, detection module are mounted in super resolution lithography lens module by mounting plate of popping one's head in；
Wherein, the alignment modules include two sets altogether, are left and right symmetrically arranged on main substrate, and alignment modules include adjusting
Platform, CCD, telecentric lens, LED light source and prism of turning back, wherein CCD, which is mounted on, is adjusted on platform, and telecentric lens and CCD connect
It connects, LED light source, prism of turning back are mounted on telecentric lens；
Wherein, the super resolution lithography lens module includes sliding rail mounting plate, sliding rail, camera lens mounting plate, super-resolution light
Carve camera lens, spring knock pin, knob and lock-screw.Wherein sliding rail mounting plate is mounted on the bottom of main substrate, the installation of two one slide rails
On sliding rail mounting plate, on the slide rail, camera lens mounting plate is mounted on sliding rail mounting plate and cunning for a certain number of spring knock pin installations
In the sliding slot of rail, super resolution lithography camera lens and knob are mounted on camera lens mounting plate, while knob is fixed on by lock-screw
On sliding rail mounting plate；
Wherein, the work stage module, including six axis precision displacement tables, six axis nanometer displacement platforms, gas path plate, hold piece
Platform, customization sealing ring, sealing ring pressure ring and substrate, six axis precision displacement tables are mounted on Active Vibration Isolation Platform, six axis nanometer positions
Moving stage is mounted in six axis precision displacement tables, and gas path plate is mounted on six axis nanometer displacement platforms, and wafer-supporting platform is mounted on gas path plate,
Customization sealing ring is mounted on wafer-supporting platform by sealing ring pressure ring, and substrate is adsorbed on wafer-supporting platform.
Wherein, the wafer-supporting platform subregion is machined with close hole, and gas path plate is disposed with intensive air flue, gas path plate air flue with hold
The close hole of piece platform corresponds.
The principle of the invention lies in:
The present invention is a kind of large area super resolution lithography device, belongs to improvement and the innovative technology neck of super resolution lithography equipment
Domain.The characteristics of device, is to include vibrating isolation foundation, Active Vibration Isolation Platform, main substrate, uv-exposure light source, gap detection system
System, alignment modules, super resolution lithography lens module, work stage module, six-axis laser interferometer measuration system, ultraprecise environmental control system
And control system.The equipment realizes the online gap detection of nanometer scale precision by white light interference technique；It is adjusted by precision
Gentle gap control technology realizes tens nanometer scale gap photoetching functions；By wafer-supporting platform part gas control technology, realize
Large area super-resolution stepping photoetching function.
1, the device is mounted in ultraprecise environmental control system, ensure that good lithographic environments；
2, the core component of the device is all mounted in main substrate or marble platform, and main substrate and marble platform
It is all mounted on Active Vibration Isolation Platform, ensure that gap detection, alignment and the stability of photoetching and reliability；
3, the clearance detecting system of the outfit of the device can be mounted on different positions according to the needs of different projective lens
It sets, online interference spectrum signal acquisition can be carried out in the gap to three points simultaneously.Pass through certain algorithm, gap detection precision
Up to nanometer scale；
4, gap detection window, alignment mark and litho pattern, oversubscription are machined on the super resolution lithography camera lens of the device
Distinguish that projective lens are installed by sliding rail, the replacement of camera lens in convenience；
5, the work stage module of the device, including six axis precision displacement tables, six axis nanometer displacement platforms, gas path plate, wafer-supporting platform,
Sealing ring, sealing ring pressure ring and substrate are customized, it can be to substrate by six-axis laser interferometer measuration system and clearance detecting system
Accurate feedback control is carried out with the relative position of mask, to realize gap photoetching function；
6, the wafer-supporting platform subregion of the device is machined with close hole, and gas path plate is disposed with intensive air flue, gas path plate air flue with hold
The close hole of piece platform corresponds, and by wafer-supporting platform part gas control technology, realizes large area super-resolution stepping photoetching function.
The beneficial effects of the present invention are:
1, the device realizes the online gap detection of nanometer scale precision by white light interference technique；
2, the device realizes tens nanometer scale gap photoetching functions by accurate leveling and gap control technology；
3, the device realizes large area super-resolution stepping photoetching function by wafer-supporting platform part gas control technology.
Detailed description of the invention
Fig. 1 is a kind of overall structure figure of large area super resolution lithography device of the invention；；
Fig. 2 is clearance detecting system structure chart of the invention；
Fig. 3 is alignment modules structure chart of the invention；
Fig. 4 is super resolution lithography lens module structure chart of the invention；
Fig. 5 is work stage function structure chart of the invention；
Fig. 6 is gas path plate structure chart of the invention；
Fig. 7 is wafer-supporting platform structure chart of the invention.
Appended drawing reference meaning in figure are as follows:
1 is vibrating isolation foundation；
2 be Active Vibration Isolation Platform；
3 be main substrate；
4 be uv-exposure light source；
5 be clearance detecting system；
6 are in alignment with module；
7 be super resolution lithography lens module；
8 be work stage module；
9 be six-axis laser interferometer measuration system；
10 be ultraprecise environmental control system；
11 be control system；
12 be spectrometer；
13 be spectrometer light source；
14 be optical fiber；
15 be probe；
16 be probe mounting plate；
17 be to adjust platform；
18 be CCD；
19 be telecentric lens；
20 be LED light source；
21 be prism of turning back；
22 be sliding rail mounting plate；
23 be sliding rail；
24 be camera lens mounting plate；
25 be super resolution lithography camera lens；
26 be spring knock pin；
27 be knob；
28 be lock-screw；
29 be six axis precision displacement tables；
30 be six axis nanometer displacement platforms；
31 be gas path plate；
32 be wafer-supporting platform；
33 be customization sealing ring；
34 be sealing ring pressure ring；
35 be substrate.
Specific embodiment
To keep the advantage of the purpose of the present invention, technical solution and equipment etc. clearer, below in conjunction with attached drawing to the present invention
It is described in further details.
Referring to Fig.1, a kind of large area super resolution lithography device, the device mainly by vibrating isolation foundation 1, Active Vibration Isolation Platform 2,
Main substrate 3, uv-exposure light source 4, clearance detecting system 5, alignment modules 6, super resolution lithography lens module 7, work stage module
8, the part such as six-axis laser interferometer measuration system 9, ultraprecise environmental control system 10 and control system 11 forms.Wherein vibrating isolation foundation 1
The vibration isolating effect of VC-E or more may be implemented with Active Vibration Isolation Platform 2；Ultraprecise environmental control system 10 is that entire super resolution lithography is set
It is standby to provide that temperature is 22 ± 0.1 °, humidity is good lithographic environments that 55 ± 5%, cleanliness is 100 grades；The core component of device
(uv-exposure light source 4, clearance detecting system 5, alignment modules 6, super resolution lithography lens module 7, work stage module 8, six axis swash
Optical interferometry system 9) it is all mounted on main substrate 3 or marble platform 2-1, and main substrate 3 and marble platform 2-1
It is all mounted on Active Vibration Isolation Platform 2, ensure that gap detection, alignment and the stability of photoetching and reliability；Uv-exposure light
Source 4 provides the uv-exposure light beam of 365 ± 5nm for entire super resolution lithography device；Control system 11 is used for super resolution lithography system
The automatic monitoring for equipment of uniting and control.
Referring to Fig. 2, the clearance detecting system 5 of the device includes altogether three sets of identical detection modules, and detection module is not according to
With the needs of projective lens, different location may be mounted at.It is handled by 11 pairs of acquisition interference spectrum signals of control system
Gap information can be obtained.
Referring to Fig. 2 and Fig. 3, the alignment modules 6 of the device include two sets altogether, corresponding super resolution lithography camera lens 25 and substrate
It is machined with alignment mark on 35, the alignment image of CCD18 acquisition is handled by control system 11, can analyze out alignment,
And carry out alignment function as feedback data.
Referring to Fig. 4, the super resolution lithography lens module 7 of the device can be compatible with one inch to 4 inches of mask plate, pass through
Sliding rail 23 can very easily carry out the replacement of super resolution lithography camera lens 25.It can be very by spring knock pin 26 and lock-screw 28
Good fixation super resolution lithography camera lens 25.
Referring to Fig. 5, the work stage module 8 of the device includes six axis precision displacement tables 29 and six axis nanometer displacement platforms 30, and six
What axis precision displacement table 29 may be implemented big stroke send piece and stepping etc. to operate, and six axis nanometer displacement platforms 30 cooperate six-axis laser dry
Relating to measuring system 9 may be implemented the control of ultraprecise gap and position adjusting, and then realize tens nanometer scale gap photoetching and set
Carve function；The customization sealing ring 33 of the equipment can make super resolution lithography camera lens 25 and substrate 35 forms confined space, control system
System 11 can control the confined space and be vacuumized.
Referring to Fig. 5, Fig. 6 and Fig. 7,32 subregion of wafer-supporting platform of the device is machined with close hole, and gas path plate 31 is disposed with intensively
Air flue, 31 air flue of gas path plate and the close hole of wafer-supporting platform 32 correspond.Control system 11 can control the pumping of each air flue or blow,
On or off, the close hole in exposure position, which is blown, can make substrate 35 paste tighter, other positions as far as possible with super resolution lithography camera lens 25
Close hole air-breathing can suck substrate 35.
Referring to Fig.1, the operating process of Fig. 2, Fig. 3, Fig. 4 and Fig. 5, the super resolution lithography device are as follows:
The first step, opens ultraprecise environmental control system 10, and opening control 11 carries out software and hardware initialization behaviour to equipment
Make.
Second step installs super resolution lithography camera lens 25, loads substrate 35.
Third step carries out gap detection, accurate leveling, fine registration, gap control (being automatically finished)；
Exposure mode and exposure parameter, exposure is arranged in 4th step.
5th step resets all modules, closes control system 11, closes ultraprecise environmental control system 10.
The above, the only specific embodiment in the present invention, but scope of protection of the present invention is not limited thereto.Appoint
What is familiar with the people of the technology within the technical scope disclosed by the invention, it will be appreciated that expects transforms or replaces, and all covers at this
Within the scope of invention.Therefore, the scope of protection of the invention shall be subject to the scope of protection specified in the patent claim.
Claims (1)
1. a kind of large area super resolution lithography device, it is characterised in that: including vibrating isolation foundation (1), Active Vibration Isolation Platform (2), master
Substrate (3), uv-exposure light source (4), clearance detecting system (5), alignment modules (6), super resolution lithography lens module (7), work
Part platform module (8), six-axis laser interferometer measuration system (9), ultraprecise environmental control system (10) and control system (11)；Uv-exposure
Light source (4), clearance detecting system (5), alignment modules (6), super resolution lithography lens module (7) and six-axis laser interferometry system
System (9) is all mounted on main substrate (3), and main substrate (3) is mounted on Active Vibration Isolation Platform (2), Active Vibration Isolation Platform (2) installation
On vibrating isolation foundation (1), whole equipment is mounted in ultraprecise environmental control system (10), and control system (11) is mounted on ultraprecise ring
On vibrating isolation foundation (1) outside control system (10)；Uv-exposure light source (4) provides 365 ± 5nm for entire super resolution lithography device
Uv-exposure light beam；
Clearance detecting system (5) includes altogether three sets of identical detection modules, and detection module includes spectrometer (12), spectrometer light source
(13), optical fiber (14), probe (15), detection module are mounted on super resolution lithography lens module (7) by probe mounting plate (16)
On；
Alignment modules (6) include two sets altogether, are left and right symmetrically arranged on main substrate (3), and alignment modules (6) include adjusting platform
(17), CCD (18), telecentric lens (19), LED light source (20) and prism of turning back (21), wherein CCD (18) is mounted on adjusting platform
(17) on, telecentric lens (19) are connect with CCD (18), and LED light source (20), prism of turning back (21) are mounted on telecentric lens (19)
On；
Super resolution lithography lens module (7) includes sliding rail mounting plate (22), sliding rail (23), camera lens mounting plate (24), super-resolution light
Camera lens (25), spring knock pin (26), knob (27) and lock-screw (28) are carved, wherein sliding rail mounting plate (22) is mounted on main substrate
(3) bottom, two one slide rails (23) are mounted on sliding rail mounting plate (22), and a certain number of spring knock pins (26) are mounted on sliding rail
(23) on, camera lens mounting plate (24) is mounted in the sliding slot of sliding rail mounting plate (22) and sliding rail (23), super resolution lithography camera lens
(25) with knob (27) be mounted on camera lens mounting plate (24), while shake hands (27) by lock-screw (28) be fixed on sliding rail peace
In loading board (22)；
Work stage module (8), including six axis precision displacement tables (29), six axis nanometer displacement platforms (30), gas path plate (31), wafer-supporting platform
(32), sealing ring (33), sealing ring pressure ring (34) and substrate (35), six axis precision displacement tables (29) are customized and is mounted on active vibration isolation
On platform (2), six axis nanometer displacement platforms (30) are mounted in six axis precision displacement tables (29), and gas path plate (31) is mounted on six axis and receives
On rice displacement platform (30), wafer-supporting platform (32) is mounted on gas path plate (31), and customization sealing ring (33) passes through sealing ring pressure ring (34)
It is mounted on wafer-supporting platform (32), substrate (35) is adsorbed on wafer-supporting platform (32)；
Wafer-supporting platform (32) subregion is machined with close hole, and gas path plate (31) is disposed with intensive air flue, gas path plate (31) air flue and holds piece
The close hole of platform (32) corresponds.
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| CN109521653A (en) * | 2018-12-11 | 2019-03-26 | 中国科学院光电技术研究所 | A kind of SP excitation illumination super resolution lithography device based on prismatic decomposition |
| CN109676578A (en) * | 2018-12-29 | 2019-04-26 | 陕西宝成航空仪表有限责任公司 | Pointing instrumentation Portable work box |
| CN111272771B (en) * | 2020-03-03 | 2023-03-31 | 中国科学院光电技术研究所 | High-resolution particle detection device |
| CN111580359B (en) * | 2020-04-29 | 2021-06-18 | 中国科学院光电技术研究所 | Intelligent correction device control system for super-resolution lithography precision mask |
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