CN108037640A - A kind of separate type near field micro-nano photolithography method and device based on white light interference gap detection and ultraprecise alignment sleeve lithography - Google Patents
A kind of separate type near field micro-nano photolithography method and device based on white light interference gap detection and ultraprecise alignment sleeve lithography Download PDFInfo
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- CN108037640A CN108037640A CN201711334920.7A CN201711334920A CN108037640A CN 108037640 A CN108037640 A CN 108037640A CN 201711334920 A CN201711334920 A CN 201711334920A CN 108037640 A CN108037640 A CN 108037640A
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- alignment
- ultraprecise
- separate type
- gap detection
- lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7038—Alignment for proximity or contact printer
Abstract
The invention discloses a kind of separate type near field micro-nano photolithography method and device based on white light interference gap detection and ultraprecise alignment sleeve lithography, this method can realize the exposure of large area separate type and ultraprecise alignment alignment, which includes ultraprecise environmental control system, Active Vibration Isolation Platform, support frame, uv-exposure light source, projective lens module, clearance detecting system, alignment modules, wafer-supporting platform module and control system.The device is by white light interference spectral measurement technology, it can be achieved that the online gap detection of nanometer scale and leveling, expose so as to fulfill separate type；By alignment modules and control system, it can be achieved that ultraprecise alignment sleeve lithography.
Description
Technical field
It is accurate based on white light interference more particularly, to one kind the present invention relates near field micro-nano lithographic process technologies field
The separate type near field micro-nano photolithography method and device of gap detection and ultraprecise alignment sleeve lithography are, it can be achieved that separate type super-resolution
Micro-nano photoetching.
Background technology
With the high speed development of IC industries, the miniaturization of electronic product integrated circuit and storage density are higher and higher, therefore
There is an urgent need to develop to have processing technology efficient, that low cost, large area, controllability are good and equipment.At present, it is fine in tradition
In Processing Routes, add with laser direct-writing, close to contact ultraviolet photolithographic, reactive ion beam etching (RIBE) etc. for the micro-meter scale of representative
Construction equipment, widely uses in research unit, electron-beam direct writing, the focused ion beam equipment of nanoscale resolving power, also
Enter R＆D institution's processing platform system.Due to complicated and expensive light-source system, high-NA projection objective system
System, the lithographic equipment price of Conventional nano scale resolving power is high, is the main reason for hindering it to enter laboratory.Therefore, pin
To hundreds of nanometers of process requirements to tens nanometer scale structures, scientific research personnel has to rely on electron-beam direct writing and poly- at present
Pyrophosphate ion beam direct write equipment.Although the two has high-resolution working ability, processing efficiency is extremely low, processing cost is extremely high.
Surface plasma (Surface Plasmon, SP) resonance interference method photoetching technique is that the one kind developed in recent years is big
Area, low cost, widely used micro-nano processing method, to break through diffraction limit, improve photolithography resolution.But the technology conduct
Near field photolithography pattern, there are the short deficiency of working distance, usually requires by blowing pressurization and the modes such as vacuum is sucked in exposure,
To ensure working distance.And the technology pattern easily pollutes substrate, mask graph, or even damage mask are destroyed, limits mask
Recycling, so as to seriously affect exposure quality and efficiency, adds exposure cost.Excite lighting system can by off-axis SP
So that photoetching working distance brings up to hundred nanometer scales, but how gap is accurately detected and controlled, ensure the stabilization of lithographic results
Reliably become new technical barrier.At present, Through Optical Interference Spectra is one of gap most efficient method between two tablets of measurement,
It has the characteristics that fast detection speed, sensitivity and precision are high, can be used for nanometer and the gap detection of micro-meter scale.
The present invention is a kind of near field micro-nano photolithography method and device.The device, can by white light interference spectral measurement technology
Realize online gap detection and the leveling of nanometer scale, exposed so as to fulfill separate type, be effectively protected mask and substrate；
Feedback control is carried out by two-frequency laser interferometer, precision displacement table, nanometer displacement platform, alignment modules and gap detection module,
Realize ultraprecise overlay alignment and stepping photoetching function.
The content of the invention
The technical problem to be solved in the invention is：Overcome in existing near field photolithography method, under contact exposure pattern,
The shortcomings such as mask service life is short, the lateral displacement that produces is big, alignment precision is low after mask and substrate contact, there is provided
A kind of separate type near field micro-nano photolithography method and device based on white light interference gap detection and ultraprecise alignment sleeve lithography, should
Method is anti-by two-frequency laser interferometer, precision displacement table, nanometer displacement platform, clearance detecting system and alignment modules progress closed loop
Feedback control, realizes separate type exposure and ultraprecise alignment alignment function.
The present invention solves the technical solution that its technical problem uses：
A kind of separate type near field micro-nano lithographic equipment based on white light interference gap detection and ultraprecise alignment sleeve lithography,
The device includes ultraprecise environmental control system, Active Vibration Isolation Platform, marble tablet, support frame, main substrate, uv-exposure light
Source, projective lens module, clearance detecting system, alignment modules, wafer-supporting platform module and control system, Active Vibration Isolation Platform, Dali
Stone tablet, support frame, main substrate, uv-exposure light source, projective lens module, clearance detecting system, alignment modules and hold piece
Platform module is installed in ultraprecise environmental control system case, and Active Vibration Isolation Platform is installed on vibration damping ground, the installation of marble tablet
On Active Vibration Isolation Platform, support frame and wafer-supporting platform module are installed on marble tablet, and main substrate is installed on support frame
On, uv-exposure light source, projective lens module, clearance detecting system, alignment modules are installed on main substrate, control system installation
Outside ultraprecise environmental control system case；Projective lens module is installed in the center deep gouge of main substrate, is pacified in projective lens module
Equipped with mask, litho pattern area, alignment patterns area and gap detection window region are machined with mask, wherein, litho pattern
Area is located on mask highly on the boss of h.
Further, clearance detecting system includes three sets of identical gap detection modules, each gap detection module bag
Include fibre-optical probe, collimater, halogen light source, spectrometer, wherein, fibre-optical probe has 3 ends, be respectively light inlet, light extraction end and
Sound end, wherein, light inlet connection halogen light source, light extraction end connection spectrometer, sound end is with mask in 90 ° installed in master
In the center deep gouge of substrate, collimater is installed on sound end front end, and halogen light source and spectrometer are installed on the machine of control system
In case.
Further, alignment modules include left alignment modules and right alignment modules, both are left and right symmetrically arranged in main substrate
On projective lens module both sides, for monitoring the state in alignment patterns areas in real time.
Further, wafer-supporting platform module include two-frequency laser interferometer, six axis precision displacement tables, six axis nanometer displacement platforms,
Wafer-supporting platform, substrate, wherein, two-frequency laser interferometer and six axis precision displacement tables are installed on marble tablet, six axis nanometer positions
Moving stage is installed in six axis precision displacement tables, and wafer-supporting platform is installed on six axis nanometer displacement platforms, and substrate is adsorbed on wafer-supporting platform.
Further, it can be achieved that the separate type near field photolithography of single game 10mm × 10mm, wherein, it is desirable to ultraprecise environmental control system
In cleanliness factor reach 100 grades；It is required that Active Vibration Isolation Platform reaches VC-F standards；It is required that the PV values of mask and substrate face type reach
To λ/20, wherein λ is the wavelength of uv-exposure light source；It is required that boss height h=(10~80) μm of ± 20nm on mask；Will
Ask and cleanliness factor detection and particulate matter removal are carried out to mask and substrate；It is required that the clearance control between mask and substrate is existed
200~300nm.
Further, gap detection window region plating of the clearance control requirement between mask and substrate on mask is thick
Spend chromium (Cr) film of 5~10nm；It is required that the accuracy of detection of clearance detecting system reaches 10nm；It is required that the leveling essence of wafer-supporting platform module
Degree reaches 20nm.
Further, it can be achieved that tens nano-precision alignment sleeve lithographies, wherein, it is desirable to the accuracy of detection of alignment modules reaches
To nanometer scale, it is desirable to which the positioning accuracy of six axis nanometer displacement platforms reaches nanometer scale.
A kind of separate type near field micro-nano photolithography method based on white light interference gap detection and ultraprecise alignment sleeve lithography,
, should using the above-mentioned separate type near field micro-nano lithographic equipment based on white light interference gap detection and ultraprecise alignment sleeve lithography
Method can realize the exposure of large area separate type and ultraprecise alignment alignment, by white light interference spectral measurement technology, it can be achieved that receiving
The online gap detection of rice magnitude and leveling, expose so as to fulfill separate type；By Moire fringe technique of alignment, it can be achieved that superfinishing
Close alignment sleeve lithography.
It is of the invention to be this have the advantage that compared with existing contact near field micro-nano photolithography method and device：
1. the device uses ultraprecise environmental control system, good lithographic environments are ensure that.
2. the device uses Active Vibration Isolation Platform and marble tablet, separate type exposure and ultraprecise alignment alignment ensure that
Stability and reliability.
3. the device using white light interference spectral measurement technology and Moire fringe technique of alignment, it can be achieved that nanometer scale
Line gap detection and ultraprecise alignment alignment.
4. the device provides feedback data by two-frequency laser interferometer and clearance detecting system, six axis accurate displacements are adjusted
Platform and six axis nanometer displacement platforms, it can be achieved that nano-precision active leveling and alignment alignment so that gap and lateral displacement
It is stably and controllable, finally realize separate type exposure and ultraprecise alignment alignment.
5. the device can realize separate type photoetching, mask can be effectively protected, improves its service life；Can effectively it drop
Lateral displacement between low mask and substrate, improves alignment alignment precision.
Brief description of the drawings
Fig. 1 is a kind of separate type based on white light interference gap detection and ultraprecise alignment sleeve lithography according to the present invention
Near field micro-nano lithographic equipment overall structure diagram；
Fig. 2 is the separate type near field micro-nano lithographic equipment based on white light interference gap detection and ultraprecise alignment sleeve lithography
Projective lens module, clearance detecting system and alignment modules structure diagram, wherein, Fig. 2 (a) is photoetching according to the present invention
The top view of camera lens module, clearance detecting system and alignment modules, Fig. 2 (b) are the top views of mask in projective lens module
(graph area and window region distribution map) and side view；
Fig. 3 is the structure chart of clearance detecting system according to the present invention；
Fig. 4 is wafer-supporting platform modular structure schematic diagram according to the present invention, wherein, Fig. 4 (a) is the overall knot of wafer-supporting platform module
Structure schematic diagram, Fig. 4 (b) are the structure diagrams of six axis precision displacement tables.
Reference numeral implication is：
1 ultraprecise environmental control system
2 Active Vibration Isolation Platforms
3 marble tablets
4 support frames
5 main substrates
6 uv-exposure light sources
7 projective lens modules
8 clearance detecting systems
9 alignment modules
10 wafer-supporting platform modules
11 control systems
12 masks
13 litho pattern areas
14 alignment patterns areas
15 gap detection window regions
16 fibre-optical probes
17 collimaters
18 halogen light sources
19 spectrometers
20 light inlets
21 light extraction ends
22 sound ends
23 two-frequency laser interferometers
24 6 axis precision displacement tables
25 6 axis nanometer displacement platforms
26 wafer-supporting platforms
27 substrates
28 Y-axis displacement platforms
29 X-axis displacement platforms
30 RX/RYTurntable
31 TZAxis electric cylinder
32 TZAxis pinboard
Embodiment
The advantages that to make the purpose of the present invention, technical solution and device, is clearer, below in conjunction with attached drawing and specific implementation
The present invention is discussed in detail in mode.But following embodiment is only limitted to explain the present invention, and protection scope of the present invention should include power
The full content that profit requires, and can realize the claims in the present invention by implementation below, those skilled in the art
Full content.
, should the separate type near field micro-nano light based on white light interference gap detection and ultraprecise alignment sleeve lithography with reference to Fig. 1
Engraving device is by ultraprecise environmental control system 1, Active Vibration Isolation Platform 2, marble tablet 3, support frame 4, main substrate 5, uv-exposure
This 11 portions of light source 6, projective lens module 7, clearance detecting system 8, alignment modules 9, wafer-supporting platform module 10 and control system 11
Be grouped into, wherein ultraprecise environmental control system 1 for whole near field micro-nano lithographic equipment provide temperature be 22 ± 0.1 °, humidity be 55 ±
5%th, cleanliness factor is 100 grades of good lithographic environments；Active Vibration Isolation Platform 2 and marble tablet 3 provide the vibration isolation grade of VC-F,
Ensure the stability of gap detection, alignment alignment and separate type exposure function；Marble tablet 3, support frame 4 and main substrate 5
With good structural stability, wafer-supporting platform module 10 is installed on marble tablet 3, is provided with main substrate 5 ultraviolet
Exposure light source 6, projective lens module 7, clearance detecting system 8 and alignment modules 9；Uv-exposure light source 6 is whole lithographic equipment
Uv-exposure light beam is provided；Control system 9 is used for the automated control operation of whole etching system device.
With reference to Fig. 2, mask 12 is installed in the projective lens module 7 of the device, photoetching figure is machined with mask 12
Shape area 13, alignment patterns area 14 and gap detection window region 15, wherein, it is highly h that litho pattern area 13, which is located on mask 12,
Boss on, gap detection window region 15 plates chromium (Cr) film of thickness 5~10nm；Clearance detecting system 8 include 3 sets it is identical between
Gap detection module 8-1,8-2,8-3；Alignment modules 9 include two groups of alignment modules 9-1,9-2 in left and right.
With reference to Fig. 3, the clearance detecting system 8 of the device includes fibre-optical probe 16, collimater 17, halogen light source 18 and light
Spectrometer 19, wherein, fibre-optical probe 16 has 3 ends, respectively light inlet 20, light extraction end 21 and sound end 22, wherein, light inlet 20 connects
Halogen light source 18 is connect, light extraction end 21 connects spectrometer 19, and sound end 22 is installed in main substrate 5 with mask 12 in 90 °
In heart deep gouge, collimater 17 is installed on 22 front end of sound end.
With reference to Fig. 4 (a), the wafer-supporting platform module 10 of the device include two-frequency laser interferometer 23, six axis precision displacement tables 24,
Six axis nanometer displacement platforms 25, wafer-supporting platform 26, substrate 27, wherein, two sets of two-frequency laser interferometers 23-1,23-2 and precision for μm/
The six axis precision displacement tables 24 of mrad are installed on marble tablet 3, and precision is that the six axis nanometer displacement platforms 25 of nm/ μ rad are installed
In six axis precision displacement tables 24, wafer-supporting platform 26 is installed on six axis nanometer displacement platforms 25, and substrate 27 is adsorbed on wafer-supporting platform 26.
With reference to Fig. 4 (b), six axis precision displacement tables 24 include Y-axis displacement platform 28, X-axis displacement platform 29, RX/RYTurntable 30,
TZAxis electric cylinder 31 and TZAxis pinboard 32, wherein, two Y-axis displacement platforms 28-1,28-2 are fixed on marble tablet 3, X-axis
Displacement platform 29 is installed on Y-axis displacement platform 28, RX/RYTurntable 30 is installed on X-axis displacement platform 29, three TZAxis electric cylinder 31-
1st, 31-2,31-3 pass through two TZAxis pinboard 32-1,32-2 are installed on RX/RYOn turntable 30.
With reference to Fig. 2, Fig. 3 and Fig. 4, when which carries out gap detection and leveling, the substrate in control wafer-supporting platform module 10
Into exposure position, then 3 T of mobile six axis precision displacement tables 24 at the same timeZAxis electric cylinder 31-1,31-2,31-3, by
Spectrometer 19 in gap detecting system 8 monitors the spectral signal of the output of fibre-optical probe 16 in real time, when spectrometer 19 has detected
When imitating interference signal, pass through the gap width H (H of 3 sets of clearance detecting system 8-1,8-2,8-3 Real-time Feedbacks1、H2、H3) instruct 3
A TZAxis electric cylinder 31-1,31-2,31-3 carry out active coarse adjustment and put down, and carrying out active accurate adjustment by six axis nanometer displacement platforms 25 puts down,
And gap width is fed back into two-frequency laser interferometer 23 in real time, realize closed-loop control.
It is as follows with reference to Fig. 1, Fig. 2, Fig. 3 and Fig. 4, the operating process of the near field micro-nano lithographic equipment：
The first step, controls six axis precision displacement tables 24 and six axis nanometer displacement platforms, 25 each axis to be answered by control system 11
Position, then controls wafer-supporting platform module 10 to enter and loads position, mounted substrate 36, finally sets exposure parameter, leveling target gap, thick
Leveling and the flat precision of accurate adjustment.
Second step, control wafer-supporting platform module 10 enter exposure position, it is ensured that 27 center alignment of mask 12 and substrate, then
By the gap width G (G=H-h) between 3 sets of clearance detecting system 8-1,8-2,8-3 Real-time Feedback masks 12 and substrate 27,
3 T of six axis precision displacement tables 24 are instructed at the same timeZAxis electric cylinder 31-1,31-2,31-3 carry out active coarse adjustment and put down, until setting
Target gap and coarse adjustment flat precision when, stop coarse adjustment and put down.
3rd step, after coarse adjustment is put down, by the gap width of 3 sets of clearance detecting system 8-1,8-2,8-3 Real-time Feedbacks come
Six axis nanometer displacement platforms 25 are instructed to carry out the gentle clearance control of active accurate adjustment, until the leveling precision and gap width of setting.
Alignment modules 9 are moved to detection zone by the 4th step, are kept by closed-loop control between mask 12 and substrate 27
Gap width and parastate, by Moire fringe mark mask 12 is aligned with substrate 27.
5th step, after completing leveling and alignment, starts to expose.
6th step, after the completion of exposure, resets all modules, closing control system 11, closes power supply.
The above, is only the embodiment in the present invention, but protection scope of the present invention is not limited thereto.Appoint
What be familiar with the people of the technology disclosed herein technical scope in, it will be appreciated that the conversion or replacement expected, all cover
Within the scope of invention.Therefore, protection scope of the present invention should be subject to the protection domain of claims.
Claims (8)
1. a kind of separate type near field micro-nano lithographic equipment based on white light interference gap detection and ultraprecise alignment sleeve lithography, its
It is characterized in that：The device includes ultraprecise environmental control system (1), Active Vibration Isolation Platform (2), marble tablet (3), support frame
(4), main substrate (5), uv-exposure light source (6), projective lens module (7), clearance detecting system (8), alignment modules (9), hold
Piece platform module (10) and control system (11), Active Vibration Isolation Platform (2), marble tablet (3), support frame (4), main substrate
(5), uv-exposure light source (6), projective lens module (7), clearance detecting system (8), alignment modules (9) and wafer-supporting platform module
(10) it is installed in ultraprecise environmental control system (1) case, Active Vibration Isolation Platform (2) is installed on vibration damping ground, marble tablet
(3) it is installed on Active Vibration Isolation Platform (2), support frame (4) and wafer-supporting platform module (10) are installed on marble tablet (3),
Main substrate (5) be installed on support frame (4) on, uv-exposure light source (6), projective lens module (7), clearance detecting system (8),
Alignment modules (9) are installed on main substrate (5), and control system (11) is installed on outside ultraprecise environmental control system (1) case；Photoetching mirror
Head module (7) is installed in the center deep gouge of main substrate (5), and mask (12), mask are provided with projective lens module (7)
(12) litho pattern area (13), alignment patterns area (14) and gap detection window region (15) are machined with, wherein, litho pattern area
(13) highly on the boss of h on mask (12).
2. the separate type near field according to claim 1 based on white light interference gap detection and ultraprecise alignment sleeve lithography
Micro-nano lithographic equipment, it is characterised in that：Clearance detecting system (8) includes three sets of identical gap detection module (8-1,8-2,8-
3), each gap detection module includes fibre-optical probe (16), collimater (17), halogen light source (18), spectrometer (19), its
In, fibre-optical probe (16) has 3 ends, respectively light inlet (20), light extraction end (21) and sound end (22), wherein, light inlet (20)
Halogen light source (18), light extraction end (21) connection spectrometer (19) are connected, sound end (22) is installed on mask (12) in 90 °
In the center deep gouge of main substrate (5), collimater (17) is installed on sound end (22) front end, halogen light source (18) and spectrometer
(19) in the cabinet of control system (11).
3. the separate type near field according to claim 1 based on white light interference gap detection and ultraprecise alignment sleeve lithography
Micro-nano lithographic equipment, it is characterised in that：Alignment modules (9) include left alignment modules (9-1) and right alignment modules (9-2), both
Projective lens module (7) both sides on main substrate (5) are left and right symmetrically arranged, for monitoring the shape of alignment patterns area (14) in real time
State.
4. the separate type near field according to claim 1 based on white light interference gap detection and ultraprecise alignment sleeve lithography
Micro-nano lithographic equipment, it is characterised in that：Wafer-supporting platform module (10) includes two-frequency laser interferometer (23), six axis precision displacement tables
(24), six axis nanometer displacement platforms (25), wafer-supporting platform (26), substrate (27), wherein, two-frequency laser interferometer (23) and six axis are accurate
Displacement platform (24) is installed on marble tablet (3), and six axis nanometer displacement platforms (25) are installed in six axis precision displacement tables (24),
Wafer-supporting platform (26) is installed on six axis nanometer displacement platforms (25), and substrate (27) is adsorbed on wafer-supporting platform (26).
5. the separate type near field according to claim 1 based on white light interference gap detection and ultraprecise alignment sleeve lithography
Micro-nano lithographic equipment, it is characterised in that：The separate type near field photolithography of single game 10mm × 10mm can be achieved, wherein, it is desirable to ultraprecise
Cleanliness factor in environmental control system (1) reaches 100 grades；It is required that Active Vibration Isolation Platform (2) reaches VC-F standards；It is required that mask (12)
Reach λ/20 with the PV values of substrate (27) face type, wherein λ is the wavelength of uv-exposure light source (6)；It is required that on mask (12)
Boss height h=(10~80) μm of ± 20nm；It is required that cleanliness factor detection and particulate matter are carried out to mask (12) and substrate (27)
Remove；It is required that by the clearance control between mask (12) and substrate (27) in 200~300nm.
6. the separate type near field according to claim 1 based on white light interference gap detection and ultraprecise alignment sleeve lithography
Micro-nano lithographic equipment, it is characterised in that：It is required that the gap detection window region (15) on mask (12) plates 5~10nm's of thickness
Chromium (Cr) film；It is required that the accuracy of detection of clearance detecting system (8) reaches 10nm；It is required that the leveling precision of wafer-supporting platform module (10) reaches
To 20nm.
7. the separate type near field according to claim 1 based on white light interference gap detection and ultraprecise alignment sleeve lithography
Micro-nano lithographic equipment, it is characterised in that：The alignment sleeve lithography of tens nano-precisions can be achieved, it is desirable to the inspection of alignment modules (9)
Survey precision and reach nanometer scale, it is desirable to which the positioning accuracy of six axis nanometer displacement platforms (25) reaches nanometer scale.
8. a kind of separate type near field micro-nano photolithography method based on white light interference gap detection and ultraprecise alignment sleeve lithography, profit
With separate type near field of the claim 1-8 any one of them based on white light interference gap detection and ultraprecise alignment sleeve lithography
Micro-nano lithographic equipment, it is characterised in that：This method can realize the exposure of large area separate type and ultraprecise alignment alignment, pass through white light
Interference spectrum e measurement technology exposes, it can be achieved that the online gap detection of nanometer scale and leveling so as to fulfill separate type；By not
That striped technique of alignment is, it can be achieved that ultraprecise alignment sleeve lithography.
Priority Applications (1)
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| CN109613801A (en) * | 2018-12-11 | 2019-04-12 | 中国科学院光电技术研究所 | A kind of SP excitation illumination super resolution lithography camera lens and device based on spectroscope light splitting |
| CN111272089A (en) * | 2020-03-03 | 2020-06-12 | 中国科学院光电技术研究所 | In-situ gap detection device and detection method |
| CN111352318A (en) * | 2020-04-29 | 2020-06-30 | 中国科学院光电技术研究所 | Alignment detection and control super-resolution photoetching device based on dark field moire fringes |
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Application publication date: 20180515 |