CN108074998A - Tubular type PERC double-side solar cells and preparation method thereof and special electroplating device - Google Patents
Tubular type PERC double-side solar cells and preparation method thereof and special electroplating device Download PDFInfo
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- CN108074998A CN108074998A CN201711407211.7A CN201711407211A CN108074998A CN 108074998 A CN108074998 A CN 108074998A CN 201711407211 A CN201711407211 A CN 201711407211A CN 108074998 A CN108074998 A CN 108074998A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 90
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 90
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 90
- 238000009713 electroplating Methods 0.000 title claims abstract description 85
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 89
- 239000010703 silicon Substances 0.000 claims abstract description 89
- 229940037003 alum Drugs 0.000 claims abstract description 53
- 239000002131 composite material Substances 0.000 claims abstract description 52
- 239000012528 membrane Substances 0.000 claims abstract description 52
- 238000007747 plating Methods 0.000 claims abstract description 25
- 210000000988 bone and bone Anatomy 0.000 claims abstract description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 88
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 239000011265 semifinished product Substances 0.000 claims description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000000047 product Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 229910052593 corundum Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/04—Electroplating with moving electrodes
- C25D5/06—Brush or pad plating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of tubular type PERC double-side solar cells, including the silver-colored main grid of the back of the body, back of the body alum gate line, back side composite membrane, P-type silicon, N-type emitter, front passivating film and positive electrode, it carries on the back alum gate line and is equipped with silver-colored outline border and galactic ridge bone, galactic ridge bone and back of the body alum gate line vertical connection, silver-colored outline border is arranged on the surrounding of back of the body alum gate line and is connected with back of the body alum gate line, galactic ridge bone, and the junction of the silver outline border and galactic ridge bone is provided with electrode hole；Positive electrode is prepared using electroplating device, and electroplating device includes electroplating bath, LED light and power supply, the face down of battery and with the plating solution contacts of electroplating bath, the back side upward and not plating solution contacts with electroplating bath, the back side of the LED light irradiation battery.Correspondingly, preparation method and special electroplating device the invention also discloses a kind of tubular type PERC double-side solar cells.Using the present invention, increase the conductive uniformity of cell backside electrode, improve the uniformity of front electroplated electrode, and keep the appearance yield of battery.
Description
Technical field
The present invention relates to solar cell field more particularly to a kind of tubular type PERC double-side solar cells, tubular type PERC are two-sided
The preparation method of the positive electrode of solar cell and preparation method and the special electroplating device of tubular type PERC double-side solar cells.
Background technology
Crystal silicon solar battery is a kind of effectively absorption solar radiant energy, and electric energy is converted optical energy into using photovoltaic effect
Device, when solar irradiation is in semiconductor P-N junction, form new electron-hole pair, under the action of P-N junction electric field, hole
P areas are flowed to by N areas, electronics flows to N areas by P areas, and electric current is just formed after connecting circuit.
Conventional crystalline silicon solar cell substantially only with front passivating technique, is deposited in front side of silicon wafer with the mode of PECVD
One layer of silicon nitride reduces few sub recombination rate in front surface, can significantly promote open-circuit voltage and the short circuit of crystal silicon battery
Electric current, so as to promote the photoelectric conversion efficiency of crystal silicon solar battery.
As the requirement of the photoelectric conversion efficiency to crystal silicon battery is higher and higher, people, which begin one's study, carries on the back passivating solar battery
Technology.The way of mainstream is come to back side coating film, board-like PECVD is made of different chambers, each using board-like PECVD at present
Chamber plates a tunic, once equipment is fixed, the number of plies of composite membrane has just been fixed, thus the shortcomings that board-like PECVD be cannot spirit
The combination living for adjusting composite membrane, it is impossible to the preferably passivation effect of optimization back side film, so as to limit the photoelectric conversion efficiency of battery.
Meanwhile board-like PECVD uses indirect plasma method, the passivation effect of film layer is not ideal.Board-like PECVD also has
The shortcomings that uptime is low, and maintenance time is long influences production capacity and yield.
The present invention deposits composite membrane using tubular type PECVD technique in silicon chip back side, makes two-sided PERC efficient solar batteries.
Since tubular type PECVD technique is using direct plasma method, but can with the combination of flexible modulation composite membrane and ingredient, film layer
The photoelectric conversion efficiency of PERC solar cells can be substantially improved in good passivation effect.The outstanding inactivating performance of tubular type PECVD technique and
The flexibility of technique with the thickness of relative reduction alundum (Al2O3) film layer, can reduce the consumption of TMA, meanwhile, tubular type PERC skills
Art easily safeguards, uptime high.In summary many factors, compared with board-like PECVD technique, tubular type PECVD technique makes high
Effect PERC batteries have significant comprehensive cost advantage.
The positive electrode of silk-screen printing silver paste technology manufacture double-sided solar battery, silver paste consumption are usually used in the industry
Greatly, of high cost, the line width of silver electrode is also bigger, and shading-area is big, the conductive lack of homogeneity of electrode, and the photoelectricity for influencing battery turns
Change efficiency.In addition, tubular type PECVD technique is due to existing around the problem plated and scratched this pair and condition each other, appearance yield and EL
Yield is always than relatively low.
The content of the invention
The technical problems to be solved by the invention are, provide a kind of tubular type PERC double-side solar cells, increase the battery back of the body
The conductive uniformity of face electrode improves the uniformity of front electroplated electrode, and keeps the appearance yield of battery.
The technical problems to be solved by the invention also reside in, and provide a kind of positive electricity of above-mentioned tubular type PERC double-side solar cells
The preparation method of the preparation method of pole and above-mentioned tubular type PERC double-side solar cells, it is simple for process, can scale of mass production, with mesh
Preceding production line good compatibility.
The technical problems to be solved by the invention also reside in, and provide a kind of the special of above-mentioned tubular type PERC double-side solar cells
Electroplating device, device structure is simple, and cost is relatively low, and yield is big, high yield rate.
It is main including back of the body silver in order to solve the above technical problem, the present invention provides a kind of tubular type PERC double-side solar cells
Grid, back of the body alum gate line, back side composite membrane, P-type silicon, N-type emitter, front passivating film and positive electrode；The back side composite membrane, p-type
Silicon, N-type emitter, front passivating film and positive electrode stack gradually connection from bottom to up；
The back side composite membrane includes one in di-aluminium trioxide film, silicon dioxide film, silicon oxynitride film and silicon nitride film
Kind is a variety of, and is deposited using Tubular PECVD device in silicon chip back side；
The back side composite membrane each swashs using the 30-500 lbg areas being arranged in parallel are formed after lbg
At least 1 group of lbg unit is set in light slotted zones, and the back of the body alum gate line is connected by lbg area with P-type silicon, described
Carry on the back alum gate line and the silver-colored main grid vertical connection of the back of the body；
The back of the body alum gate line is equipped with silver-colored outline border and galactic ridge bone, the galactic ridge bone and back of the body alum gate line vertical connection, the silver
Outline border is arranged on the surrounding of back of the body alum gate line and is connected with back of the body alum gate line, galactic ridge bone, and the junction of the silver outline border and galactic ridge bone is set
There is electrode hole；
The positive electrode is prepared using electroplating device, and the electroplating device includes electroplating bath, LED light and power supply, pipe
The face down of formula PERC double-side solar cells and with the plating solution contacts of electroplating bath, the back side of tubular type PERC double-side solar cells
The plating solution contacts with electroplating bath, the LED light irradiate the back side of tubular type PERC double-side solar cells upward and not；
Anode plate and electrode tip are equipped in the electroplating bath, the anode of the power supply is connected with anode plate, the cathode of power supply
It is connected with electrode tip, electrode tip is connected with the electrode hole at the tubular type PERC double-side solar cells back side.
As the improvement of above-mentioned technical proposal, the material of the electrode tip is graphite.
As the improvement of above-mentioned technical proposal, the LED light generates LED green lights.
As the improvement of above-mentioned technical proposal, the LED light irradiation back of the body silver main grid, back of the body alum gate line and back side composite membrane.
Correspondingly, the present invention also provides a kind of preparation method of the positive electrode of tubular type PERC double-side solar cells, including：
(1) tubular type PERC double-side solar cell semi-finished product are placed in electroplating device, face down, the back side upward, LED light
The back side of tubular type PERC double-side solar cell semi-finished product is irradiated, and causes the electrode hole of cell backside and the electrode tip of electroplating device
It is connected；
(2) front of tubular type PERC double-side solar cells semi-finished product and the plating solution contacts of electroplating bath form positive electrode, and
The back side of tubular type PERC double-side solar cell semi-finished product not plating solution contacts with electroplating bath.
As the improvement of above-mentioned technical proposal, the material of the electrode tip is graphite.
Correspondingly, the present invention also provides a kind of preparation method of tubular type PERC double-side solar cells, including：
(1) matte is formed in front side of silicon wafer, the silicon chip is P-type silicon；
(2) it is diffused in front side of silicon wafer, forms N-type emitter；
(3) phosphorosilicate glass and the periphery P N knots that diffusion process is formed are removed, and silicon chip back side is polished；
(4) anneal to silicon chip；
(5) back side composite membrane is deposited in silicon chip back side using Tubular PECVD device：
(6) passivating film is deposited in front side of silicon wafer；
(7) to carrying out lbg on silicon chip back side composite membrane；
(8) to carrying out lbg on front side of silicon wafer passivating film；
(9) the silver-colored main grid of the back of the body, silver-colored outline border and galactic ridge pulp material, drying, the friendship of silver-colored outline border and galactic ridge bone are printed in silicon chip back side
The place of connecing is provided with electrode hole；
(10) aluminium paste is printed in lbg area, is allowed to main grid silver-colored with the back of the body, silver-colored outline border and galactic ridge pulp material and is connected；
(11) back up electrode is sintered, obtains tubular type PERC double-side solar cell semi-finished product；
(12) tubular type PERC double-side solar cell semi-finished product are placed in electroplating device, face down, the back side upward, LED
The back side of light irradiation tubular type PERC double-side solar cell semi-finished product, and cause the electrode hole of cell backside and the electrode of electroplating device
Head is connected, and the front of tubular type PERC double-side solar cell semi-finished product and the plating solution contacts of electroplating bath form positive electrode, and manage
The back side of formula PERC double-side solar cell semi-finished product not plating solution contacts with electroplating bath；
(13) anti-LID annealing is carried out to silicon chip, tubular type PERC double-side solar cell finished products are made.
Correspondingly, the present invention also provides a kind of special electroplating device of tubular type PERC double-side solar cells, set including level
The electroplating bath put, the carrying axle arranged on electroplating bath top and for carrying tubular type PERC double-side solar cells, on electroplating bath
The LED light and power supply of side；
Anode plate and electrode tip are equipped in the electroplating bath, the anode of the power supply is connected with anode plate, the cathode of power supply
It is connected with electrode tip, electrode tip is connected with the electrode hole at the tubular type PERC double-side solar cells back side, and the LED light irradiates tubular type
The back side of PERC double-side solar cells.
As the improvement of above-mentioned technical proposal, the material of the electrode tip is graphite；The LED light is LED green lights.
Implement the present invention, have the advantages that：
The present invention uses special electroplating device, using the positive electrode of electroplating technology manufacture double-side cell, to double-side cell
Carrying on the back alum gate line increases silver-colored outline border and galactic ridge bone, connects the cathode of power supply with the junction setting electrode hole of galactic ridge bone in silver-colored outline border,
Increase the conductive uniformity of cell backside electrode.Simultaneously using the characteristic of double-side cell back side light, battery is irradiated with LED green lights
The back side so that electronics is generated in the laser groove of front side of silicon wafer, so that silicon chip deposits front gate line electrode in electroplate liquid, and it is good
The uniform performance of good backplate improves the uniformity of front electronics in laser groove, and then improves the uniform of front electroplated electrode
Property.Double-side cell face down contact plating liquid, the back side not with plating solution contacts, avoid backplate from being subject to electroplate liquid upward
Corrosion, so as to not influence the appearance yield of battery.
Description of the drawings
Fig. 1 is the sectional view of tubular type PERC double-side solar cells of the present invention；
Fig. 2 is the schematic diagram of the backside structure of the double-side solar cell of tubular type PERC shown in Fig. 1；
Fig. 3 is the enlarged drawing of A portions shown in Fig. 2；
Fig. 4 is the schematic diagram of the first embodiment of back side composite membrane shown in Fig. 1；
Fig. 5 is the schematic diagram of the second embodiment of back side composite membrane shown in Fig. 1；
Fig. 6 is the schematic diagram of the 3rd embodiment of back side composite membrane shown in Fig. 1；
Fig. 7 is the schematic diagram of the fourth embodiment of back side composite membrane shown in Fig. 1；
Fig. 8 is the schematic diagram of the 5th embodiment of back side composite membrane shown in Fig. 1；
Fig. 9 is the schematic diagram of the sixth embodiment of back side composite membrane shown in Fig. 1；
Figure 10 is the schematic diagram of the special electroplating device of tubular type PERC double-side solar cells of the present invention；
Figure 11 is the schematic diagram of the electrode tip of electroplating device.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
It is described in detail on step ground.
As shown in Figure 1, the present invention provides a kind of tubular type PERC double-side solar cells 100, including the silver-colored main grid 1 of the back of the body, back of the body alum gate
Line 2, back side composite membrane 3, P-type silicon 5, N-type emitter 6, front passivating film 7 and positive electrode 8；The back side composite membrane 3, P-type silicon
5th, N-type emitter 6, front passivating film 7 and positive electrode 8 stack gradually connection from bottom to up；
The back side composite membrane 3 forms the lbg area that 30-500 groups are arranged in parallel after lbg, each to swash
At least 1 group of lbg unit 9 is set in light slotted zones, and the back of the body alum gate line 2 is connected by lbg area with P-type silicon 5；Institute
State back of the body alum gate line 2 and the back of the body 1 vertical connection of silver-colored main grid.
The present invention is improved existing single side PERC solar cells, no longer equipped with full aluminum back electric field, but is become
Into many back of the body alum gate lines 2, using opening up lbg area in lbg technology overleaf composite membrane 3, and carry on the back alum gate line 2 and print
Brush is in the lbg area that these are arranged in parallel, so as to form localized contact, the back of the body aluminium of intensive parallel arrangement with P-type silicon 5
Grid line 2, which can not only play, improves open-circuit voltage Voc and short circuit current flow Jsc, reduces minority carrier recombination rate, improves cell photoelectric
The effect of transfer efficiency, the full aluminum back electric field of alternative existing single side battery structure, and carry on the back alum gate line 2 and do not cover silicon comprehensively
The back side of piece, sunlight can be projected in silicon chip between back of the body alum gate line 2, absorb luminous energy so as to fulfill silicon chip back side, significantly carry
The photoelectric conversion efficiency of high battery.
Preferably, the radical of the back of the body alum gate line 2 is corresponding with the number in lbg area, is all 30-500 items, more preferably,
The radical of the back of the body alum gate line 2 is 80-220 items.
Silicon chip back side, back of the body alum gate line 2 and the back of the body 1 perpendicular connection of silver-colored main grid are illustrated in figure 2, wherein carrying on the back silver-colored main grid 1 to connect
Continue straight grid, since back side composite membrane 3 is equipped with lbg area, when printing aluminium paste forms back of the body alum gate line 2, aluminium paste is filled to laser and opened
Slot area so that back of the body alum gate line 2 forms localized contact with P-type silicon 5, can be by electron-transport to alum gate line 2 is carried on the back, with carrying on the back 2 phase of alum gate line
The silver-colored main grid 1 of the back of the body of friendship then collects the electronics on back of the body alum gate line 2, it follows that back of the body alum gate line 2 of the present invention plays raising open circuit
Voltage Voc and short circuit current flow Jsc reduces minority carrier recombination rate and transmits the effect of electronics, and alternative existing single side is too
Secondary grid structure in positive electricity pond in full aluminum back electric field and back of the body silver electrode, not only reduces the dosage of silver paste and aluminium paste, reduces production
Cost, and realize two-sided absorption luminous energy, be significantly expanded the application range of solar cell and improve photoelectric conversion efficiency.
The silver-colored main grid 1 of the back of the body of the present invention can also be set in addition to being illustrated in figure 2 the setting of continuous straight grid in space segmentation
It puts.It can also be in that space segmentation is set, and be connected between each adjacent sectional by communication line.The width of the silver-colored main grid 1 of the back of the body is
0.5-5mm；The radical of the silver-colored main grid 1 of the back of the body is 2-8 items.
It should be noted that when setting 2 groups or 2 groups or more lbg units 9 in each lbg area, each group swashs
Light slotted unit 9 is arranged in parallel, and the spacing between two adjacent groups lbg unit 9 is 5-480 μm.
Every group of lbg unit 9 includes at least one lbg unit 9, the pattern of lbg unit 9 for it is circular,
It is ellipse, triangle, quadrangle, pentagon, hexagon, cross or star-shaped.
The width in lbg area of the present invention is 10-500 μm；Back of the body alum gate line 2 below lbg area
Width is more than the width in lbg area, and the width of back of the body alum gate line 2 is 30-550 μm.Above-mentioned 2 width of the back of the body alum gate line selection compared with
Big such as 500 μm of numerical value, and multigroup lbg area can be side by side located at together by the selection of lbg sector width compared with such as 40 μm of fractional value
On one back of the body alum gate line 2, ensure that back of the body alum gate line 2 there are enough contacts area with P-type silicon 5.
It should be noted that the lbg unit set in the lbg area, can be flat with back of the body alum gate line
It is capable or vertical.
The back of the body alum gate line 2 is equipped with silver-colored outline border 12 and galactic ridge bone 11, and the galactic ridge bone 11 is with carrying on the back that alum gate line 2 is vertical to be connected
It connects, the silver outline border 12 is arranged on the surrounding of back of the body alum gate line 2 and is connected with back of the body alum gate line 2, galactic ridge bone 11.The double-side cell back of the body of the present invention
Silver-colored outline border 12 and galactic ridge bone 11 are set on alum gate line 2, be because the electric conductivity of silver is best, can using the combination of aluminum steel and silver wire
To improve the conductive uniformity of backplate, so that generating uniform electronics at front electrode, the uniform of front electrode is improved
Property.As shown in figure 3, the junction of the silver outline border 12 and galactic ridge bone 11 is provided with electrode hole 13.
The positive electrode of silk-screen printing silver paste technology manufacture double-sided solar battery, silver paste consumption are usually used in the industry
Greatly, of high cost, the line width of silver electrode is also bigger, and shading-area is big, influences the photoelectric conversion efficiency of battery.It is for this reason, of the invention
Positive electrode 8 be prepared using electroplating device, the electroplating device includes electroplating bath, LED light and power supply, and tubular type PERC is two-sided
The face down of solar cell and with the plating solution contacts of electroplating bath, the back side of tubular type PERC double-side solar cells upward and not with
The plating solution contacts of electroplating bath, the back side of the LED light irradiation tubular type PERC double-side solar cells.Sun is equipped in the electroplating bath
Pole plate and electrode tip, the anode of the power supply are connected with anode plate, and the cathode of power supply is connected with electrode tip, electrode tip and tubular type
The electrode hole connection at the PERC double-side solar cells back side.
Preferably, the electrode tip is button shape, and material is graphite, it is not easy to damage back of the body silver grating line.
The present invention uses special electroplating device, using the positive electrode of electroplating technology manufacture double-side cell, to double-side cell
Carrying on the back alum gate line increases silver-colored outline border and galactic ridge bone, increases the conductive uniformity of cell backside electrode, while utilizes the double-side cell back side
The characteristic of light irradiates cell backside with LED light, improves the uniformity of front electroplated electrode.Double-side cell face down contacts
Electroplate liquid, the back side not with plating solution contacts, avoid backplate from being corroded be subject to electroplate liquid upward, so as to not influence the outer of battery
See yield.
The present invention is using photoinduction electroplating technology, and illumination crystal silicon battery generates carrier (electronics and hole), in built-in electricity
Under the action of, electronics will accumulate in the front surface of cell piece, and void coalescence is in rear surface, and metal ion in electroplate liquid,
It will assemble in cell piece and reduction reaction occurs at electronics, and be deposited at this.Photoinduction electroplating deposition speed is fast, is suitble to volume production
Change.Plated material of the present invention is simple metal, and for the slurry of silk-screen printing, resistivity will be lower, and resistance power loss will
It is smaller.
Specifically, the LED light generates LED green lights, the LED light irradiation back of the body silver main grid, back of the body alum gate line and the back side are compound
Film improves the uniformity of front electroplated electrode.Electrode tip is connected with the electrode hole at the tubular type PERC double-side solar cells back side, is increased
The conductive uniformity of cell backside electrode.
There are also the electrodes that single side crystal silicon solar battery is prepared using electroplating technology, still, pass through electroplating technology institute shape
Into solar cel electrode depth-width ratio it is poor, i.e. the height of positive electrode is low, width is big, is unfavorable for the collection of light induced electron, and photoelectricity turns
It is low to change efficiency.
But the present invention prepares the front electrode of two-sided crystal silicon battery using photo-induction waveguide technology, by by the front of battery
Downward and with the plating solution contacts of electroplating bath, and ensure the back side upward and not plating solution contacts with electroplating bath, while by LED light
The back side of battery is irradiated, LED light generates LED green lights.In addition, the junction of silver-colored outline border and galactic ridge bone is provided with electrode hole, electrode
The electrode tip of hole and electroplating device connects, and can solve the problems, such as that the uniformity of electroplating technology formation positive electrode is poor.The present invention
Electroplating technology can improve the uniformity and depth-width ratio of positive electrode to a certain extent.
The positive electrode of the present invention can be silver electrode or copper electrode and nickel electrode.
Preferably, above-mentioned positive electrode is prepared, using following methods：First, adulterated using laser chemistry, it is blunt in cutting front
Change the synchronization of film, realization width is 10um-35um, and square resistance is the heavily doped region of 20 Ω/；Then plated in heavily doped region
The nickel that thickness is about 200nm is Seed Layer；Silver-plated on the seed layer or copper again increases the height of electrode, the width of entire electrode
For 20um-60um, it is highly 8um-20um, reaches preferable depth-width ratio.
On the other hand, in order to coordinate the above-mentioned PERC double-side solar cells for being equipped with back of the body alum gate line, the present invention uses tubular type
PECVD device deposits back side composite membrane in silicon chip back side, and tubular type PERC equipment uses direct plasma method, and plasma is directly to silicon
Piece surface is bombarded, and the passivation effect of film layer is notable.As shown in figures 4-9, the back side composite membrane 3 includes alundum (Al2O3)
One or more in film, silicon dioxide film, silicon oxynitride film and silicon nitride film, and carried on the back using Tubular PECVD device in silicon chip
Face deposits.The Tubular PECVD device be equipped with silane, ammonia, trimethyl aluminium, four gas pipings of laughing gas, described four
Gas piping acts on alone or in combination, for forming the di-aluminium trioxide film, silicon dioxide film, silicon oxynitride film, silicon nitride
Film by adjusting gas flow ratio, can obtain the silicon oxynitride film or silicon nitride film of heterogeneity ratio and refractive index, described
Di-aluminium trioxide film, silicon dioxide film, silicon oxynitride film, silicon nitride film shaping order, thickness is adjustable, the silicon oxynitride
Film, the ingredient of silicon nitride film and refractive index are adjustable.
Four silane, ammonia, trimethyl aluminium, laughing gas gas pipings can be by using different combination of gases, different
Gas flow ratio and different sedimentation times form different film layers, for silicon nitride film or silicon oxynitride film, pass through adjusting
Gas flow ratio can obtain the silicon nitride film or silicon oxynitride film of heterogeneity ratio and refractive index.The combination of composite membrane is suitable
The ingredient of sequence, thickness and film can be with flexible modulation, and therefore, production process of the invention is flexibly controllable, and cost is relatively low, and yield is big.
Moreover, by optimizing back side composite membrane, it is made to be adapted with the back of the body alum gate line at the back side, optimal passivation effect is generated, significantly carries
Rise the photoelectric conversion efficiency of PERC batteries.
The back side composite membrane 3 is there are many embodiment, and referring to Fig. 4,5 and 6, the bottom of the back side composite membrane is three oxygen
Change two aluminium films, outer layer is made of the one or more of silicon dioxide film, silicon oxynitride film and silicon nitride film.
The first embodiment of back side composite membrane as shown in Figure 4, the bottom 31 of the back side composite membrane 3 is alundum (Al2O3)
Film, outer layer 32 are made of silicon oxynitride film, silicon nitride film.
The second embodiment of back side composite membrane as shown in Figure 5, the bottom 31 of the back side composite membrane is alundum (Al2O3)
Film, outer layer 32 are made of silicon nitride film.
The 3rd embodiment of back side composite membrane as shown in Figure 6, the bottom 31 of the back side composite membrane is alundum (Al2O3)
Film, outer layer 32 are made of silicon dioxide film, silicon oxynitride film A, silicon oxynitride film B and silicon nitride film.
Referring to Fig. 7,8 and 9, the bottom 31 of the back side composite membrane is silicon dioxide film, and the second layer 32 is alundum (Al2O3)
Film, outer layer 33 are made of the one or more of silicon dioxide film, silicon oxynitride film and silicon nitride film.
The fourth embodiment of back side composite membrane as shown in Figure 7, the bottom 31 of the back side composite membrane is silicon dioxide film,
The second layer 32 is di-aluminium trioxide film, and outer layer 33 is made of silicon nitride film.
5th embodiment of back side composite membrane as shown in Figure 8, the bottom 31 of the back side composite membrane is silicon dioxide film,
The second layer 32 is di-aluminium trioxide film, and outer layer 33 is by silicon dioxide film, silicon oxynitride film A, silicon oxynitride film B, silicon nitride film group
Into.
The sixth embodiment of back side composite membrane as shown in Figure 9, the bottom 31 of the back side composite membrane is silicon dioxide film,
The second layer 32 is di-aluminium trioxide film, and outer layer 33 is by silicon dioxide film, silicon oxynitride film and silicon nitride film A, silicon nitride film B groups
Into.
Specifically, the thickness of the di-aluminium trioxide film is 5-15nm, the thickness of the silicon nitride film is 50-150nm, institute
The thickness of silicon oxynitride film is stated as 5-20nm, the thickness of the silicon dioxide film is 1-10nm.The di-aluminium trioxide film, nitridation
The actual (real) thickness of silicon fiml, silicon oxynitride film and silicon dioxide film can be adjusted according to actual needs, and embodiments thereof is not
It is confined to illustrated embodiment of the present invention.
Correspondingly, the present invention also provides a kind of preparation method of the positive electrode of tubular type PERC double-side solar cells, including：
(1) tubular type PERC double-side solar cell semi-finished product are placed in electroplating device, face down, the back side upward, LED light
The back side of tubular type PERC double-side solar cell semi-finished product is irradiated, and causes the electrode hole of cell backside and the electrode tip of electroplating device
It is connected；
(2) front of tubular type PERC double-side solar cells semi-finished product and the plating solution contacts of electroplating bath form positive electrode, and
The back side of tubular type PERC double-side solar cell semi-finished product not plating solution contacts with electroplating bath.
With reference to tubular type PERC double-side solar cells complete preparation method come the present invention is further explained, the preparation
Method includes：
(1) matte is formed in front side of silicon wafer, the silicon chip is P-type silicon；
(2) it is diffused in front side of silicon wafer, forms N-type emitter；
(3) phosphorosilicate glass and the periphery P N knots that diffusion process is formed are removed, and silicon chip back side is polished；
(4) anneal to silicon chip；
(5) back side composite membrane is deposited in silicon chip back side using Tubular PECVD device：
(6) passivating film is deposited in front side of silicon wafer；
(7) to carrying out lbg on silicon chip back side composite membrane；
(8) to carrying out lbg on front side of silicon wafer passivating film；
(9) the silver-colored main grid of the back of the body, silver-colored outline border and galactic ridge pulp material, drying, the friendship of silver-colored outline border and galactic ridge bone are printed in silicon chip back side
The place of connecing is provided with electrode hole；
(10) aluminium paste is printed in lbg area, is allowed to main grid silver-colored with the back of the body, silver-colored outline border and galactic ridge pulp material and is connected；
(11) back up electrode is sintered, obtains tubular type PERC double-side solar cell semi-finished product；
(12) tubular type PERC double-side solar cell semi-finished product are placed in electroplating device, face down, the back side upward, LED
The back side of light irradiation tubular type PERC double-side solar cell semi-finished product, and cause the electrode hole of cell backside and the electrode of electroplating device
Head is connected, and the front of tubular type PERC double-side solar cell semi-finished product and the plating solution contacts of electroplating bath form positive electrode, and manage
The back side of formula PERC double-side solar cell semi-finished product not plating solution contacts with electroplating bath；
(13) anti-LID annealing is carried out to silicon chip, tubular type PERC double-side solar cell finished products are made.
Preparation method of the present invention is simple for process, can scale of mass production, with current production line good compatibility.
As shown in Figure 10, the present invention also provides a kind of special electroplating device of tubular type PERC double-side solar cells, including water
The flat electroplating bath 10 set, the carrying axle 20 arranged on 10 top of electroplating bath and for carrying tubular type PERC double-side solar cells, if
LED light 30 and power supply 40 above electroplating bath 10；
Anode plate 50 and electrode tip 60 are equipped in the electroplating bath 10, the anode of the power supply 40 is connected with anode plate 50,
The cathode of power supply 40 is connected with electrode tip 60, and electrode tip 60 is connected with the electrode hole at the tubular type PERC double-side solar cells back side, institute
State the back side that LED light 30 irradiates tubular type PERC double-side solar cells 100.
The LED light is preferably LED green lights, and the silver-colored main grid of the LED green lights irradiation back of the body, back of the body alum gate line and back side composite membrane improve
The uniformity of front electroplated electrode.
Above equipment is simple in structure, and cost is relatively low, and yield is big, high yield rate.
It should be noted that the operation principle of the special electroplating device and the manufacturing process of electrode, technical detail are same
Upper described, particular content is referring to the preparation method part of battery and battery, and details are not described herein.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected
The limitation of scope is protected, although being explained in detail with reference to preferred embodiment to the present invention, those of ordinary skill in the art should
Understand, technical scheme can be modified or replaced equivalently, without departing from the essence of technical solution of the present invention
And scope.
Claims (10)
1. a kind of tubular type PERC double-side solar cells, which is characterized in that including the silver-colored main grid of the back of the body, back of the body alum gate line, back side composite membrane, P
Type silicon, N-type emitter, front passivating film and positive electrode；The back side composite membrane, P-type silicon, N-type emitter, front passivating film and
Positive electrode stacks gradually connection from bottom to up；
The back side composite membrane include di-aluminium trioxide film, silicon dioxide film, silicon oxynitride film and silicon nitride film in one kind or
It is a variety of, and deposited using Tubular PECVD device in silicon chip back side；
The back side composite membrane is opened using the 30-500 lbg areas being arranged in parallel, each laser is formed after lbg
At least 1 group of lbg unit is set in slot area, and the back of the body alum gate line is connected by lbg area with P-type silicon, the back of the body aluminium
Grid line and the silver-colored main grid vertical connection of the back of the body；
The back of the body alum gate line is equipped with silver-colored outline border and galactic ridge bone, the galactic ridge bone and back of the body alum gate line vertical connection, the silver outline border
It is connected arranged on the surrounding for carrying on the back alum gate line and with back of the body alum gate line, galactic ridge bone, the junction of the silver outline border and galactic ridge bone is provided with electricity
Pole hole；
The positive electrode is prepared using electroplating device, and the electroplating device includes electroplating bath, LED light and power supply, tubular type
The face down of PERC double-side solar cells and with the plating solution contacts of electroplating bath, the back side court of tubular type PERC double-side solar cells
Above and not the plating solution contacts with electroplating bath, the LED light irradiate the back side of tubular type PERC double-side solar cells；
Anode plate and electrode tip are equipped in the electroplating bath, the anode of the power supply is connected with anode plate, cathode and the electricity of power supply
Cartridge connects, and electrode tip is connected with the electrode hole at the tubular type PERC double-side solar cells back side.
2. tubular type PERC double-side solar cells as described in claim 1, which is characterized in that the material of the electrode tip is graphite.
3. tubular type PERC double-side solar cells as described in claim 1, which is characterized in that the LED light generates LED green lights.
4. tubular type PERC double-side solar cells as claimed in claim 3, which is characterized in that the LED light irradiation back of the body silver main grid, the back of the body
Alum gate line and back side composite membrane.
5. a kind of preparation method of the positive electrode of tubular type PERC double-side solar cells, which is characterized in that including：
(1) tubular type PERC double-side solar cell semi-finished product are placed in electroplating device, face down, upward, LED light is irradiated at the back side
The back side of tubular type PERC double-side solar cell semi-finished product, and the electrode hole of cell backside is connected with the electrode tip of electroplating device
It connects；
(2) front of tubular type PERC double-side solar cells semi-finished product and the plating solution contacts of electroplating bath, formation positive electrode, and tubular type
The back side of PERC double-side solar cell semi-finished product not plating solution contacts with electroplating bath.
6. the preparation method of the positive electrode of tubular type PERC double-side solar cells as claimed in claim 5, which is characterized in that the electricity
The material of cartridge is graphite.
7. a kind of preparation method of tubular type PERC double-side solar cells, which is characterized in that including：
(1) matte is formed in front side of silicon wafer, the silicon chip is P-type silicon；
(2) it is diffused in front side of silicon wafer, forms N-type emitter；
(3) phosphorosilicate glass and the periphery P N knots that diffusion process is formed are removed, and silicon chip back side is polished；
(4) anneal to silicon chip；
(5) back side composite membrane is deposited in silicon chip back side using Tubular PECVD device：
(6) passivating film is deposited in front side of silicon wafer；
(7) to carrying out lbg on silicon chip back side composite membrane；
(8) to carrying out lbg on front side of silicon wafer passivating film；
(9) the silver-colored main grid of the back of the body, silver-colored outline border and galactic ridge pulp material, drying, the junction of silver-colored outline border and galactic ridge bone are printed in silicon chip back side
It is provided with electrode hole；
(10) aluminium paste is printed in lbg area, is allowed to main grid silver-colored with the back of the body, silver-colored outline border and galactic ridge pulp material and is connected；
(11) back up electrode is sintered, obtains tubular type PERC double-side solar cell semi-finished product；
(12) tubular type PERC double-side solar cell semi-finished product are placed in electroplating device, face down, upward, LED light is shone at the back side
The back side of tubular type PERC double-side solar cell semi-finished product is penetrated, and causes the electrode tip phase of the electrode hole and electroplating device of cell backside
Connection, the front of tubular type PERC double-side solar cell semi-finished product and the plating solution contacts of electroplating bath, formation positive electrode, and tubular type
The back side of PERC double-side solar cell semi-finished product not plating solution contacts with electroplating bath；
(13) anti-LID annealing is carried out to silicon chip, tubular type PERC double-side solar cell finished products are made.
8. a kind of special electroplating device of tubular type PERC double-side solar cells, which is characterized in that including horizontally disposed electroplating bath,
Carrying axle arranged on electroplating bath top and for carrying tubular type PERC double-side solar cells, the LED light above electroplating bath,
And power supply；
Anode plate and electrode tip are equipped in the electroplating bath, the anode of the power supply is connected with anode plate, cathode and the electricity of power supply
Cartridge connects, and electrode tip is connected with the electrode hole at the tubular type PERC double-side solar cells back side, and the LED light irradiation tubular type PERC is double
The back side of face solar cell.
9. special electroplating device as claimed in claim 8, which is characterized in that the material of the electrode tip is graphite.
10. special electroplating device as claimed in claim 9, which is characterized in that the LED light is LED green lights.
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